CN115156725B - Etching forming method based on laser scanning strategy - Google Patents
Etching forming method based on laser scanning strategy Download PDFInfo
- Publication number
- CN115156725B CN115156725B CN202210880688.1A CN202210880688A CN115156725B CN 115156725 B CN115156725 B CN 115156725B CN 202210880688 A CN202210880688 A CN 202210880688A CN 115156725 B CN115156725 B CN 115156725B
- Authority
- CN
- China
- Prior art keywords
- etching
- plane
- dimensional
- model
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims abstract description 182
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000012545 processing Methods 0.000 claims abstract description 37
- 238000010329 laser etching Methods 0.000 claims abstract description 29
- 239000013598 vector Substances 0.000 claims description 16
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 claims description 2
- 230000010354 integration Effects 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 description 9
- 230000007704 transition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The embodiment of the invention discloses an etching forming method based on a laser scanning strategy, which can comprise the following steps: extracting n layers of two-dimensional plane etching patterns according to a three-dimensional etching model of a model to be processed, wherein n is an integer greater than or equal to 3, dividing the n layers of two-dimensional plane etching patterns in regions in a mode of comparing the area ratio, and inputting different laser scanning energy for each region on the divided two-dimensional plane etching patterns to carry out etching. The method solves the problems of low surface size precision, poor surface quality of the etched curved surface and distortion of etching depth of the laser etching processing, and solves the problems of long period of the laser etching process, low processing efficiency of the laser etching and selectivity of the characteristic curved surface of the part to be etched.
Description
Technical Field
The invention relates to the field of laser processing etching, in particular to an etching forming method based on a laser scanning strategy.
Background
As an advanced manufacturing technology, laser processing is widely applied to production and manufacture, especially industries with high requirements on product precision and processing quality in the aerospace field, because the laser processing has higher collimation and highly concentrated energy output of light beams, micron-sized light spot diameter and no interaction force exists between the laser processing and parts during processing. The laser etching is one of important application branches of a process of laser processing, is mainly oriented to micro-nano etching processing of a product in three dimensions, and has extremely high requirements on the dimensional accuracy and etching depth of the product.
Currently, a numerical control precision machine tool based on a laser micro-etching process is widely applied at home and abroad. The main principle is that a numerical control precision machine tool is used, so that the part to be etched moves in multiple degrees of freedom in a three-dimensional space, laser beams enter the surface of the part to be processed in a working area through a beam expander, a collimating lens, a deflection lens, a scanning vibrating lens, a field lens and a protection lens, and after the processing of the scanning area of the current layer is completed, the Z-axis is fed in real time until all the processing curved surfaces are scanned, so that the micro-etching processing of the established etched three-dimensional model is realized. Under the action of the scanning galvanometer, the servo motor drives the X-axis and Y-axis laser plane mirrors of the scanning galvanometer to reflect, so that the scanning track deflection of the laser beam on the XOY plane in a specific area is realized, and the field lens ensures that the track of the laser beam on the XOY plane is positioned at a specific focal depth position, and ensures that the laser beam has a specific beam waist size and uniform energy density output.
Disclosure of Invention
The embodiment of the invention expects to provide the etching forming method based on the laser scanning strategy, which has high etching precision, good etching surface quality and undistorted etching depth, and simultaneously can solve the problems of long etching process period, low laser etching processing efficiency and characteristic curved surface selectivity of the part to be etched.
The technical scheme of the invention is realized as follows:
An etch-forming method based on a laser scanning strategy, the method comprising: extracting n layers of two-dimensional plane etching patterns according to a three-dimensional etching model of a model to be processed, wherein n is an integer greater than or equal to 3, dividing the n layers of two-dimensional plane etching patterns in regions in a mode of comparing the area ratio, and inputting different laser scanning energy for each region on the divided two-dimensional plane etching patterns to carry out etching.
The invention provides an etching forming method based on a laser scanning strategy, which is characterized in that in the same coordinate system, the extracted planar two-dimensional etching patterns are divided into areas, corresponding filling vectors are generated for different areas of each layer of etching patterns, the energy input of laser beams in different areas of the same laser etching pattern is controlled, the effects of high dimensional precision of etched parts, high surface quality of etched curved surfaces and undistorted etching depth are realized, meanwhile, compared, after the etching strategy is used, the efficiency of laser etching a three-dimensional model is improved by 30% -60%, the period of a laser etching process is shortened, the laser etching processing efficiency is improved, the selectivity of the non-characteristic curved surfaces of parts to be etched is higher, and the processing yield is higher.
Drawings
FIG. 1 is a flow chart of an etching forming method based on a laser scanning strategy according to an embodiment of the present invention;
FIG. 2 is a projection of a three-dimensional etching model of a model to be processed in an embodiment of the invention on an XOZ plane;
FIG. 3 is a projection of a three-dimensional etching model of a model to be processed in an embodiment of the invention on an XOY plane;
FIG. 4 is a schematic diagram of a planar etching pattern after completing region division according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of adding an additional profile to the planar etching pattern after the completion of the region division in accordance with an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
In the prior art, a plurality of strategies are proposed for laser etching methods, cao Yu and the like in the prior art 1 (patent number is CN 201110048935.3) propose a laser processing method and device suitable for complex curved surfaces, which mainly divide the continuous curved surfaces into different curved surface coordinate systems by taking the bottom surface opposite to the outer surface of a curved surface sheet in a minimum cuboid bounding box of the curved surface sheet as an X-Y reference plane and the normal positive direction at the geometric center of the bottom surface as a Z-axis positive direction coordinate system, compare the normal direction of any position of the curved surface with the Z-axis positive direction included angle in the corresponding curved surface and the corresponding coordinate system, and if the included angle is smaller than 90 degrees, and the to-be-processed graph contained in the curved surface sheet is projected to the Z-Y reference plane in parallel along the Z-axis direction of the curved surface sheet coordinate system, so that the scanning motion track of a scanning vibrating mirror in the specific curved surface and the corresponding coordinate system can be realized, and further the etching of parts is realized. In the method, a plurality of coordinate systems are used for realizing the laser etching processing of the complex curved surface, but the following problems exist in the process of generating a laser etching program: 1) The vector 'stitching' problem of the scanning track exists among the partitioned sub-curved surfaces by the laser beams; the continuous curved surface is divided into sub-curved surfaces based on the normal direction and the Z-axis forward included angle of any point of the transition curved surface, vectors of a large number of laser beam scanning tracks between a plurality of curved surfaces are sewed, the laser is in a frequent switching light process, if switching light parameters are improperly set, transition defects such as grooves, meat lack and the like can be generated at the transition part of the sub-curved surfaces, and on the other hand, the frequent switching light of the laser has transition loss for the start and stop of the laser. 2) The continuous curved surface segmentation has curved surface transition angle limitation; in the sub-curved surface and the corresponding sub-coordinate system, the normal direction of any point of the curved surface forms an included angle with the positive direction of the Z axis, and if the angle is more than or equal to 90 degrees, the curved surface with the characteristics cannot extract the corresponding etched two-dimensional plane scanning track.
On the other hand, for micro-etching processing of the three-dimensional curved surface part in the micron level, the problems of distortion of the dimensional accuracy still exist in the aspects of the dimensional accuracy of laser etching and depth control. In the prior art 2 (patent No. 201910751233.8), ma Jianwei of university of company provides a laser processing method of blind grooves with low side wall cone angles, based on the cone angle blind groove characteristics of a part to be processed, laser processing parameter combinations of depth required by etching are calculated, preliminary etching of the blind grooves is carried out, an offset curve is formed by the current laser scanning track with a tiny line spacing through comparing the ideal residual height of the preset groove bottom with a predicted section ablation profile model, and the offset curve is used as the laser scanning track for reprocessing the side wall of the subsequent blind groove, so that the width precision of the blind groove is realized, and the cone angle of the side wall of the blind groove is reduced. Based on this, this method has the following problems: 1) The blind groove processing of the taper angle of the low side wall to be processed is performed in stages, the blind groove processing has high requirements on equipment precision, and the blind groove processing efficiency is low; and firstly performing preliminary etching on the blind groove to be processed, then comparing the residual height of the groove bottom with a predicted ablation profile model, calculating an offset curve for forming a laser track, and gradually correcting the taper of the side wall of the blind groove until the dimension requirement of a drawing is met. 2) The etching method has selectivity to the type of the processed blind groove and has no universality.
Based on the shortcomings of the prior art, the embodiment of the invention provides an etching forming method based on a laser scanning strategy, which is used for a model to be processed with a taper gamma for projection on a plane, wherein gamma is 0 degrees and 180 degrees, and referring to fig. 1, the method comprises the following steps:
Extracting n layers of two-dimensional plane etching patterns according to a three-dimensional etching model of the model to be processed, wherein n is an integer greater than or equal to 3;
Dividing the areas of the n layers of two-dimensional plane etching patterns in a mode of comparing the area ratio;
And inputting different laser scanning energy for each area on the divided two-dimensional plane etching graph to etch.
By the method, the problems of low surface size precision, poor surface quality of the etched curved surface and distortion of etching depth of the laser etching processing can be solved, and meanwhile, the problems of long laser etching process period, low laser etching processing efficiency and feature curved surface selectivity of the part to be etched can be solved.
The etching forming method based on the laser scanning strategy in the embodiment of the invention comprises the following steps:
Step one, extracting 3 layers of two-dimensional plane etching patterns according to a three-dimensional etching model of a model to be processed, wherein the step one comprises the following steps:
The method comprises the steps that a three-dimensional etching model of a model to be processed is imported into a specific coordinate system, the specific coordinate system comprises a working coordinate system and a Cartesian coordinate system, the working coordinate system is a machine tool coordinate system which is well known to a person skilled in the art in laser etching equipment, the main purpose of the step is to extract and generate a two-dimensional plane etching pattern of the three-dimensional etching model of the model to be processed, the problem that the continuous complex curved surface of the same etching model is divided into different parts and placed in different coordinate systems, the formed model data processing front section data size is overlarge, and the corresponding curved surfaces of different parts are spliced to cause etching defects easily is solved, meanwhile, the three-dimensional model to be etched is taken as an integral consideration concept through the step, the two-dimensional plane to be etched pattern to be processed is cut in the same coordinate system, the effect of simplification is achieved by using dimension reduction decomposition;
Pouring a three-dimensional etching model to be processed into a specific coordinate system, wherein the three-dimensional etching model to be processed is shown in a front view schematic diagram of an XOZ plane of the three-dimensional etching model of the model to be processed, a curved surface contour coordinate set L m＝{xcm,ycm,zcm,im,jm,km is calculated in the coordinate system according to the normal direction of the three-dimensional etching model, m represents the number of point coordinates and is an integer, x cm,ycm,zcm represents vector projection of the three-dimensional etching model of the model to be processed in the x, y and z directions in a working coordinate system, and i m,jm,km represents normal vector projection of the three-dimensional etching model of the model to be processed in a Cartesian coordinate system;
Based on the set L m along the normal direction of the three-dimensional etching of the to-be-processed model, as shown in fig. 3, the three-dimensional etching model of the processing model is divided into 3 layers of plane etching patterns on an XOY plane, so as to obtain a 3-layer plane etching pattern set d= { D 1,D2,D3 }, respectively.
Step two, respectively carrying out region division on the 3 layers of two-dimensional plane etching patterns in a mode of comparing the area ratio, wherein the step two comprises the following steps:
Calculating the areas of 3 planar etched patterns in the set D to obtain a set S= { S 1,S2,S3 }, and determining the minimum area S min in the set S at the same time, wherein, xi E [1,3] and xi is an integer, generating a continuous contour curve according to the pattern contour point coordinates C ξ by acquiring the pattern contour point coordinates C ξ＝{xξ,yξ,zξ,iξ,jξ,kξ of D 1、D2、D3, and expressing the minimum area S min in the set S by functional formulas P (x, y) and Q (x, y) Calculating the area S 1、S2、S3 of the D 1、D2、D3 etching pattern corresponding to the two-dimensional XOY plane to obtain an area aggregate S= { S 1,S2,S3 }, comparing to obtain the plane etching pattern with the minimum area as D 3 and the area as S 3, and according to the formulaCalculating an area ratio set of each planar etching pattern, determining a minimum area ratio based on the calculated set, and determining a minimum area S min by the minimum area ratio, wherein the pattern with the minimum area is D 1 in the embodiment;
calculating a curvature radius set R ξ＝{R1,R2…Rg of the plane etching graph D ξ, wherein D ξ epsilon D, epsilon [1, n ] and epsilon are integers, g is the number of curvature radii of the plane etching graph D ξ, g is an integer, calculating geometric center point coordinates M 1(x1,y1 of 3 plane etching graphs according to graph contour point coordinates C 1＝{x1,y1,z1,i1,j1,k1 of D 1), and calculating a curve function relation of graph contours of the plane etching graph D ξ: x 1 =x (t), y1=y (t), according to the formula Calculating a set R 1＝{r1,r2…rg of curvature radii of the plane etching pattern D 1, wherein g is the number of curvature radii of the plane etching pattern D 1, g is an integer, wherein (((x '(t) x y' (t)) - (x '(t) x y' (t)) @) is not equal to 0, and Respectively calculating a curvature radius set R 2 and a curvature radius set R 3 of the plane etching pattern D 2、D3 according to the calculation mode;
After the three plane etching patterns of D 1、D2、D3 are obtained, the three patterns are sequenced in a mode of area ratio comparison, and the area division of the plane etching patterns is realized in a mode of projecting curvature radius, so that the scanning area division problem of the plane etching patterns is solved, the effects of different energy magnitudes of laser scanning input in the same etching pattern and different areas are realized,
According to the formulaThe area ratio of the 3-layer plane etching patterns is obtained, wherein S ξ epsilon S, zeta epsilon [1,3] and zeta is an integer, the 3-layer plane etching patterns are orderly sequenced from small to large according to the size of the area ratio, a sequenced area set S ' = { S 1',S2',S3 ' } is generated, a sequenced plane etching pattern set D ' = { D 1',D2',D3 ' } is obtained according to the set S ', the area ratio between different layers is calculated and compared through generating a curvature radius set of the plane etching patterns and a corresponding curved surface area set, the area sequence of disordered different two-dimensional patterns to be etched is realized, the problem of the subsequent dividing area of different patterns to be etched is solved, and the technical effect of etching pattern area division is realized;
in the set S When referring to fig. 3 and 4, the set of radii of curvature of D σ' is projected ontoTo pair withDividing the region into a plurality of regions, wherein sigma,And sigma is,Comparing 3 areas in the set S 'in turn for integers, carrying out region division on each plane etching graph in the set D' to obtain a region-divided plane etching graph set D "= { D 1",D2",D3" }, wherein projection of a curvature radius set of xi-1 plane etching graphs on the plane etching graph D ξ "exists in xi etching energy filling regions, Wherein D ξ "∈D", ζ ε [1,3] and ζ is an integer, that is to say in FIG. 3 the area of D 3 "is largest, compared with which the area of D 1",D2" is necessarily smaller than D 3 ", Then the radius of curvature on D 1",D2 "is projected to D 3" to divide the area of D 3 ", the projection of 2 other planar etch patterns on planar etch pattern D 3", Dividing it into 3 etching energy filling regions, see fig. 4, and similarly, compared with D 2 ", only the area of D 1" is smaller than D 2 ", then projecting the curvature radius of D 1" onto D 2 "to divide it into regions, The planar etch pattern D 2 "has a projection of 1 other planar etch pattern thereon, dividing it into 2 etch energy filling regions,
In the planar etching pattern for completing the region division, S ξ-γ represents an energy filling region formed by projecting a planar etching pattern D γ "onto the planar etching pattern D ξ", wherein D γ"∈Dξ ", γ e [1, ζ -1], γ is an integer, see fig. 4 specifically, S 3-2 represents an energy filling region formed by projecting a planar etching pattern D 2" onto the planar etching pattern D 3 ", and S 3-1 represents an energy filling region formed by projecting a planar etching pattern D1" onto the planar etching pattern D 3 "; s 2-1 shows that the plane etching pattern D 1 'is projected to an energy filling area formed on the plane etching pattern D2', 3 layers of plane etching patterns are ordered in a small-to-large mode according to the area ratio, and a curvature radius set of the etching pattern with small area in the plane etching pattern set is projected to the etching pattern with larger area, so that the problem of etching depth is solved.
Inputting different laser scanning energy for each area on the divided two-dimensional plane etching graph to etch, wherein the method comprises the following steps:
Starting a scanning light path, and scanning a laser beam on each plane etching pattern in the collection D 'to obtain the distribution of different etching energy filling areas on the plane etching pattern D ξ', wherein ζ is an integer;
performing differential etching laser energy filling in different etching energy filling areas to generate corresponding laser processing programs, namely filling laser beam scanning filling vectors in the different etching energy filling areas, wherein in the different etching energy filling areas, processing parameters such as scanning intervals and or scanning speeds of the laser beam scanning filling vectors are inconsistent, and by controlling the same layer, different laser scanning energy input size differences in different areas solve the problem of differential energy input size of the same etching pattern and different areas; different etching patterns and different energy input sizes solve the problem of laser scanning energy input and realize the effect of higher precision of etching depth;
and performing laser etching, stopping light emission of the scanning light path after the laser etching is finished, and finishing processing.
In another embodiment of the present invention, after the planar etching pattern is divided into the regions, adding an additional contour to the planar etching pattern after the division is completed, and merging it with the outermost region of the original planar etching pattern, so as to solve the problem of the surface dimensional accuracy of the deeper etching model, see fig. 5, which shows an effect diagram of adding an additional contour C 0 in the embodiment of the present invention, wherein a 1 is an additional contour filling vector region 1, a 2 is an additional contour filling vector region 2, a 3 is an additional contour filling vector region 3, merging the a 3 region with the S 3-3 region, merging the a 2 region with the S 2-2 region, merging the a 1 region with the S 1 region, and performing laser scanning vector filling by merging the planar etching region to complete the additional contour, so as to solve the problem of the laser etching track speed and the difference of energy input sizes of different regions in the same layer of planar etching region, so as to achieve the technical effect of more accurate laser etching depth. The method for adding the additional contour optimizes the region division strategy combined with the outer contour of the current plane etching pattern, and carries out the laser scanning vector filling strategy on the combined whole region, so that the technical effects of controlling the shape angle and the dimensional accuracy of the etching model are better on the basis of realizing the optimal etching depth and the surface quality for the three-dimensional model with larger etching depth.
The invention provides an etching forming method based on a laser scanning strategy, which mainly solves the problems of low surface size precision, poor surface quality of an etched curved surface and etching depth distortion of laser etching processing, and on the other hand, solves the problems of long laser etching process period, low laser etching processing efficiency and characteristic curved surface selectivity of a part to be etched, the energy input of the laser beam in different areas of the same laser etching pattern is controlled, the effects of high dimensional accuracy of the etched part, high surface quality of the etched curved surface and undistorted etching depth are achieved, meanwhile, compared, after the etching strategy is used, the efficiency of the laser etching of the three-dimensional model is improved by 30% -60%, the period of a laser etching process is shortened, the processing efficiency of the laser etching is improved, the selectivity of the non-characteristic curved surface of the part to be etched is improved, and the processing yield is high.
It should be noted that: the technical schemes described in the embodiments of the present invention may be arbitrarily combined without any collision.
The foregoing is merely illustrative of embodiments of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily appreciate variations and substitutions within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (6)
1. An etching forming method based on a laser scanning strategy, which is characterized by comprising the following steps:
Extracting n layers of two-dimensional plane etching patterns according to a three-dimensional etching model of the model to be processed; wherein n is an integer of 3 or more;
Dividing the areas of the n layers of two-dimensional plane etching patterns in a mode of comparing the area ratio;
different laser scanning energy is input for each area on the divided two-dimensional plane etching graph to carry out etching,
Wherein, according to the three-dimensional etching model of the model to be processed, extracting n layers of two-dimensional plane etching patterns comprises:
firstly, importing a three-dimensional etching model of the model to be processed into a specific coordinate system, wherein the specific coordinate system comprises a working coordinate system and a Cartesian coordinate system;
Step two, acquiring a curved surface contour coordinate set L m＝{xcm,ycm,zcm,im,jm,km of a three-dimensional etching model of the model to be processed, wherein m represents the number of point coordinates and is an integer; x cm,ycm,zcm represents the vector projection of the three-dimensional etching model of the model to be processed in the working coordinate system in the x, y and z directions, and i m,jm,km represents the normal vector projection of the three-dimensional etching model of the model to be processed in the Cartesian coordinate system;
Third, dividing the three-dimensional etching model of the processing model into n layers of plane etching patterns along the normal direction of the three-dimensional etching of the model to be processed based on the set L m to obtain a n-layer plane etching pattern set D= { D 1,D2,D3…Dn },
The method for dividing the area of the n layers of two-dimensional plane etching patterns in a mode of comparing the area ratio comprises the following steps:
Firstly, calculating the area of each layer of plane etching patterns in the collection D and obtaining a collection S= { S 1,S2,S3…Sn }, and simultaneously determining the minimum area S min in the collection S;
Calculating a curvature radius set R ξ＝{R1,R2…Rg of a plane etching graph D ξ, wherein D ξ epsilon D, epsilon [1, n ] and epsilon are integers, g is the number of the curvature radii of the plane etching graph D ξ, and g is an integer;
third, according to the formula The area ratio of the n-layer plane etching patterns is obtained, wherein S ξ epsilon S, zeta epsilon [1, n ] and zeta is an integer, the n-layer plane etching patterns are orderly sequenced from small to large according to the size of the area ratio, a sequenced area set S ' = { S 1',S2',S3'……Sn ' } is generated, and a sequenced plane etching pattern set D ' = { D 1',D2',D3'…Dn ' } is obtained according to the set S ';
fourth step, when in the set S When the curvature radius set of D σ' is projected toTo pair withPerforming region division, whereinAnd sigma is,And (3) sequentially comparing n areas in the set S ' for integers, and carrying out region division on each plane etching graph in the set D ' to obtain a plane etching graph set D ' = { D 1",D2",D3"…Dn ' }, wherein projection of a curvature radius set of the xi-1 plane etching graphs on the plane etching graph D ξ ' is provided, and xi etching energy filling regions exist, wherein D ξ '. Epsilon.D ', xi E [1, n ] and xi are integers.
2. The method of claim 1, wherein the dividing the n-layer two-dimensional planar etching patterns into regions by comparing the area ratio sizes, respectively, further comprises:
and adding an additional contour outside the plane etching pattern D ξ' to form a combined plane etching pattern.
3. The method according to claim 1 or 2, wherein inputting different laser scanning energies for each region on the divided two-dimensional planar etching pattern for etching comprises:
Firstly, starting a scanning light path, and scanning a laser beam on each plane etching pattern in the integration D 'to obtain the distribution of different etching energy filling areas on the plane etching pattern D ξ', wherein ζ is [1, n ] and ζ is an integer;
Secondly, performing differential etching laser energy filling in the different etching energy filling areas to generate corresponding laser processing programs;
thirdly, performing a laser etching step;
and fourthly, stopping light emission of the scanning light path after the laser etching is finished, and finishing processing.
4. A method according to claim 3, wherein said differential etching laser energy filling is performed in said different etching energy filling areas to generate a corresponding laser processing program, specifically:
filling laser beam scanning filling vectors in the different etching energy filling areas, wherein the processing parameters of the laser beam scanning filling vectors are inconsistent in the different etching energy filling areas.
5. The method according to claim 1, wherein calculating the area of each layer of the planar etching patterns in the set D and obtaining the set s= { S 1,S2,S3…Sn }, comprises:
Firstly, obtaining a graph outline point coordinate C ξ＝{xξ,yξ,zξ,iξ,jξ,kξ of D ξ, wherein ζ is an integer;
Secondly, generating a continuous contour curve according to the graph contour point coordinates C ξ, and calculating the area S ξ of the D ξ etched graph corresponding to the two-dimensional XOY plane by using the functional relation P (x, y) and Q (x, y) as shown in the following formula:
and thirdly, calculating the areas of the n plane etching patterns, and generating an area set S= { S 1,S2,S3…Sn }.
6. The method of etching and shaping according to claim 1, wherein said calculating the set of radii of curvature R ξ＝{R1,R2…Rg of the planar etching pattern D ξ includes:
Calculating a graph contour point coordinate of the plane etching graph D ξ as C ξ＝{xξ,yξ,zξ,iξ,jξ,kξ }, wherein ζ E [1, n ] and ζ is an integer, and a geometric center point coordinate M ξ(xξ,yξ of the plane etching graph D ξ;
Step two, obtaining a curve function relation of the graph outline of the plane etching graph D ξ: x ξ＝x(t),yξ = y (t), according to the formula Calculating a set R ξ＝{R1,R2…Rg of the curvature radius of the plane etching pattern D ξ, wherein g is the number of the curvature radius of the plane etching pattern D ξ, g is an integer,
Wherein ((x '(t) x "(t)) - (x" (t) x' (t)). Noteq.0,
And is also provided with
And thirdly, calculating a curvature radius set of the n plane etching patterns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210880688.1A CN115156725B (en) | 2022-07-25 | 2022-07-25 | Etching forming method based on laser scanning strategy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210880688.1A CN115156725B (en) | 2022-07-25 | 2022-07-25 | Etching forming method based on laser scanning strategy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115156725A CN115156725A (en) | 2022-10-11 |
| CN115156725B true CN115156725B (en) | 2024-10-22 |
Family
ID=83498026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210880688.1A Active CN115156725B (en) | 2022-07-25 | 2022-07-25 | Etching forming method based on laser scanning strategy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115156725B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117260002B (en) * | 2023-11-20 | 2024-02-09 | 西安精谐科技有限责任公司 | Hemispherical resonant gyro electrode based on laser processing and processing method and system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102905823A (en) * | 2009-12-01 | 2013-01-30 | 英特基因有限公司 | Composite plastic articles |
| CN108031981A (en) * | 2017-12-18 | 2018-05-15 | 中国科学院西安光学精密机械研究所 | Laser etching method and device for forming curved surface structure |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09225660A (en) * | 1996-02-21 | 1997-09-02 | Hitachi Ltd | Method and device for laser-annealing of thin film semiconductor element and device for drilling wiring board |
| US6426480B1 (en) * | 2000-08-30 | 2002-07-30 | Igor Troitski | Method and laser system for production of high quality single-layer laser-induced damage portraits inside transparent material |
| US9352415B2 (en) * | 2005-02-15 | 2016-05-31 | Carl Zeiss Meditec Ag | Method for generating an ablation program, method for ablating a body and means for carrying out said method |
| JP2006350038A (en) * | 2005-06-16 | 2006-12-28 | Fujifilm Holdings Corp | Pattern forming method |
| KR101674506B1 (en) * | 2015-08-10 | 2016-11-10 | 에이피시스템 주식회사 | Manufacturing method of shadow mask using hybrid processing and shadow mask thereby |
| DE102016116241A1 (en) * | 2016-08-31 | 2018-03-01 | Infineon Technologies Ag | METHOD FOR PROCESSING A WAFERS AND METHOD FOR PROCESSING A CARRIER |
| DE102017207256A1 (en) * | 2017-04-28 | 2018-10-31 | Eos Gmbh Electro Optical Systems | Increase the surface quality |
| KR102130060B1 (en) * | 2017-10-11 | 2020-07-03 | 에이피에스홀딩스 주식회사 | Laser machining method |
| US10744539B2 (en) * | 2017-10-27 | 2020-08-18 | The Boeing Company | Optimized-coverage selective laser ablation systems and methods |
| CN108838551B (en) * | 2018-06-29 | 2019-12-03 | 中国科学院西安光学精密机械研究所 | Three-dimensional curved surface laser etching method |
| CN108723615B (en) * | 2018-07-17 | 2024-07-16 | 西安中科微精光子科技股份有限公司 | Micropore laser processing method and system based on laser pulse overlapping rate control |
| WO2020058722A1 (en) * | 2018-09-20 | 2020-03-26 | Camadd Ltd | A powder bed: additive manufacturing |
| CN110039186B (en) * | 2019-04-22 | 2020-06-19 | 西安交通大学 | Curved surface model path planning method applied to laser surface etching |
| CN112666890B (en) * | 2020-12-30 | 2022-09-16 | 西安中科微精光子科技股份有限公司 | Curved surface workpiece machining track planning method |
-
2022
- 2022-07-25 CN CN202210880688.1A patent/CN115156725B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102905823A (en) * | 2009-12-01 | 2013-01-30 | 英特基因有限公司 | Composite plastic articles |
| CN108031981A (en) * | 2017-12-18 | 2018-05-15 | 中国科学院西安光学精密机械研究所 | Laser etching method and device for forming curved surface structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115156725A (en) | 2022-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6882497B2 (en) | How to machine the surface of a work piece with a laser | |
| CN102147600B (en) | Numerical control interpolation system for real-time generation of curvature-continuous path | |
| CN101204758B (en) | Producing method of leather pattern mould | |
| WO2014002660A1 (en) | Method for controlling machines according to pattern of contours and laser cutting machine | |
| US9244456B2 (en) | Tool path generation method and apparatus | |
| CN115156725B (en) | Etching forming method based on laser scanning strategy | |
| JP4281292B2 (en) | Three-dimensional laser machining data creation method, data creation program, medium recording the data creation program, and machining method and apparatus | |
| Filaretov et al. | The automatization method of processing of flexible parts without their rigid fixation | |
| WO2015114734A1 (en) | Cutting method and tool path generating device | |
| JP7446055B2 (en) | Method and machinery for manufacturing cutting tools | |
| JPH04230503A (en) | Tool-orbit-profile obtaining method in numerically controlled machine | |
| CN108177028B (en) | Ceramic grinding process | |
| JP4403662B2 (en) | Curved surface correction polishing system, NC polishing apparatus, NC program generation method for optical component polishing, NC program generation method for polishing, two-dimensional coordinate point group file generation method for NC program, NC program generation method | |
| Lauwers et al. | Five-axis rough milling strategies for complex shaped cavities based on morphing technology | |
| Sekine et al. | Establishing a Novel Model for 5-Axis Milling with a filleted end mill | |
| US20020119020A1 (en) | Machine tools | |
| CN116958178B (en) | Autonomous planning method and system for weld polishing based on laser vision | |
| Zhang et al. | Adaptive slicing for a five-axis laser aided manufacturing process | |
| CN115592287A (en) | Additive and subtractive manufacturing method for pore and narrow gap characteristics | |
| Takizawa et al. | Prompt estimation of die and mold machining time by AI without NC program | |
| JP3378445B2 (en) | Numerical control device for 3D cutting machine | |
| Routhu et al. | 2-D path planning for direct laser deposition process | |
| RU2783722C1 (en) | Method for manufacturing parts from a sheet metal blank on a cnc laser machine | |
| JP2916529B2 (en) | Tool control method in NC machine tool | |
| Itohara et al. | Toolpath Generation Algorithm Using Route Model for Non-planar Layering in Additive Manufacturing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |