CN114900151B - Bulk acoustic wave resonator and preparation method thereof - Google Patents
Bulk acoustic wave resonator and preparation method thereof Download PDFInfo
- Publication number
- CN114900151B CN114900151B CN202210553350.5A CN202210553350A CN114900151B CN 114900151 B CN114900151 B CN 114900151B CN 202210553350 A CN202210553350 A CN 202210553350A CN 114900151 B CN114900151 B CN 114900151B
- Authority
- CN
- China
- Prior art keywords
- film layer
- thin film
- piezoelectric
- piezoelectric thin
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 103
- 239000010409 thin film Substances 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000004020 conductor Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 235000019687 Lamb Nutrition 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The application discloses a bulk acoustic wave resonator and a preparation method thereof, which relate to the technical field of resonators, and the preparation method of the bulk acoustic wave resonator comprises the following steps: forming a piezoelectric thin film layer on a wafer substrate; forming a lower electrode on the piezoelectric film layer, wherein a first parallel wing is formed at the edge of the lower electrode through a connecting section, and a gap is formed between the first parallel wing and the piezoelectric film layer; forming a support piece on the piezoelectric film layer forming the lower electrode, forming a cavity between the support piece and the piezoelectric film layer, wherein the cavity is communicated with the gap; bonding the wafer base with the substrate through the support and removing the wafer base; and forming an upper electrode on the piezoelectric film layer, wherein the edges of the upper electrode are connected through a connecting section to form a second parallel wing, and the projections of the upper electrode, the piezoelectric film layer, the lower electrode and the cavity on the substrate are provided with overlapped effective resonance areas. The bulk acoustic wave resonator and the preparation method thereof can effectively reflect transverse waves and improve the Q value of the bulk acoustic wave resonator.
Description
Technical Field
The application relates to the technical field of resonators, in particular to a bulk acoustic wave resonator and a preparation method thereof.
Background
Bulk acoustic wave resonators made by longitudinal resonance of piezoelectric thin films in the thickness direction have become alternatives to surface acoustic wave devices and quartz crystal resonators in various fields such as high-speed serial data applications. The RF front-end filter/duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, larger power capacity, stronger antistatic discharge capacity, etc., and has the advantages of ultralow frequency temperature drift, low phase noise, low power consumption and wide bandwidth modulation range as a bulk acoustic wave resonator constituting the filter/duplexer. In addition, these micro bulk acoustic wave resonators use complementary metal oxide semiconductor compatible processing on silicon substrates, which can reduce unit cost and facilitate final integration with circuitry.
Bulk acoustic wave resonators comprise an acoustically reflective structure and two electrodes, and a piezoelectric layer, called piezoelectric excitation, between the two electrodes, sometimes also called excitation electrodes, which function to cause mechanical oscillations of the layers of the resonator. The acoustic reflective structure forms an acoustic isolation between the bulk acoustic wave resonator and the substrate. The Q value is the ratio of the total energy stored by the resonator to the energy lost by the resonator through various pathways. The improvement of the Q value of the bulk acoustic wave resonator is helpful to improve the passband insertion loss and roll-off of the filter and ensure the performance of the bulk acoustic wave filter.
The impedance of the bulk acoustic wave resonator is related to the transverse dimension of the resonant area thereof, and the impedance of the bulk acoustic wave resonator needs to be matched with the impedance of other elements forming the filter, so that the transverse dimension of the resonant area is limited, the resonant area refers to the area where the upper electrode, the piezoelectric layer and the lower electrode are overlapped, the area of the upper electrode and the area of the lower electrode are smaller than the area of the piezoelectric layer, when the acoustic wave is transmitted to the junction of the resonant area and the non-resonant area, the acoustic impedance discontinuity appears at the junction of the resonant area and the non-resonant area, the lamb mode wave is excited, the lamb mode wave contains the component of transverse wave, the lamb mode wave cannot be well limited in the resonator, and can leak to the non-resonant area and enter the substrate at the junction of the resonant area and the non-resonant area, so that the Q value of the resonator is reduced.
Disclosure of Invention
The application aims to provide a bulk acoustic wave resonator and a preparation method thereof, which can effectively reflect transverse waves and improve the Q value of the bulk acoustic wave resonator.
In one aspect, embodiments of the present application provide a method for manufacturing a bulk acoustic wave resonator, including: forming a piezoelectric thin film layer on a wafer substrate; forming a lower electrode on the piezoelectric film layer, wherein the edge of one side of the projection of the lower electrode on the wafer substrate is flush with the edge of one side of the projection of the piezoelectric film layer on the wafer substrate, the projection of the lower electrode is in the projection range of the piezoelectric film layer, a first parallel wing is formed on the edge of the lower electrode through a connecting section, and a gap is reserved between the first parallel wing and the piezoelectric film layer; forming a support piece on the piezoelectric film layer forming the lower electrode, forming a cavity between the support piece and the piezoelectric film layer, wherein the cavity is communicated with the gap; bonding the wafer base with the substrate through the support and removing the wafer base; and forming an upper electrode on the piezoelectric film layer, wherein the edge of one side of the projection of the upper electrode on the substrate is flush with the edge of the other side of the projection of the piezoelectric film layer on the substrate, the projection of the upper electrode is in the projection range of the piezoelectric film layer, the edge of the upper electrode is connected with the piezoelectric film layer through a connecting section to form a second parallel wing, a gap is reserved between the second parallel wing and the piezoelectric film layer, and the projections of the upper electrode, the piezoelectric film layer, the lower electrode and the cavity on the substrate are provided with overlapped effective resonance areas.
As an embodiment, a lower electrode is formed on the piezoelectric film layer, a side edge of a projection of the lower electrode on the wafer substrate is flush with a side edge of a projection of the piezoelectric film layer on the wafer substrate, the projection of the lower electrode is within a projection range of the piezoelectric film layer, a first parallel wing is formed on an edge of the lower electrode through a connecting section, and after a gap is formed between the first parallel wing and the piezoelectric film layer, the preparation method of the bulk acoustic wave resonator further includes: a lower boundary ring is formed on the lower electrode, the lower boundary ring covering the first parallel wings.
As an embodiment, an upper electrode is formed on the piezoelectric film layer, one side edge of the projection of the upper electrode on the substrate is flush with the other side edge of the projection of the piezoelectric film layer on the substrate, the projection of the upper electrode is within the projection range of the piezoelectric film layer, the edge of the upper electrode is connected with a second parallel wing through a connecting section, a gap is formed between the second parallel wing and the piezoelectric film layer, and after the projection of the upper electrode, the piezoelectric film layer, the lower electrode and the cavity on the substrate has an overlapped effective resonance area, the preparation method of the bulk acoustic wave resonator further comprises: an upper boundary ring is formed on the upper electrode, the upper boundary ring covering the second parallel wing.
As an embodiment, a lower electrode is formed on the piezoelectric film layer, a side edge of a projection of the lower electrode on the wafer substrate is flush with a side edge of a projection of the piezoelectric film layer on the wafer substrate, the projection of the lower electrode is within a projection range of the piezoelectric film layer, a first parallel wing is formed on an edge of the lower electrode through a connection section, and a gap is formed between the first parallel wing and the piezoelectric film layer, including: forming a first sacrificial bump on the piezoelectric layer; depositing and patterning a conductive material on the piezoelectric film formed with the first sacrificial protrusion, wherein the conductive material deposited on the upper surface of the first sacrificial protrusion is used as a first parallel wing, and the conductive material deposited on the piezoelectric film layer is used as a lower electrode; the first sacrificial protrusion is released to form a gap between the first parallel wing and the piezoelectric film layer.
As an embodiment, forming a support on the piezoelectric film layer forming the lower electrode, forming a cavity between the support and the piezoelectric film layer, the cavity communicating with the gap, includes: forming a sacrificial layer on the piezoelectric film layer with the lower electrode, wherein the sacrificial layer covers the lower boundary ring and the first parallel wings; forming a support on the piezoelectric thin film layer formed with the sacrificial layer; the release sacrificial layer and the first sacrificial protrusion form a cavity.
As an embodiment, forming an upper electrode on the piezoelectric thin film layer, wherein one side edge of a projection of the upper electrode on the substrate is flush with the other side edge of a projection of the piezoelectric thin film layer on the substrate, the projection of the upper electrode is within a projection range of the piezoelectric thin film layer, the edge of the upper electrode is connected with the piezoelectric thin film layer through a connecting section to form a second parallel wing, a gap is formed between the second parallel wing and the piezoelectric thin film layer, and the projection of the upper electrode, the piezoelectric thin film layer, the lower electrode and the cavity on the substrate has overlapping effective resonance areas, and the method comprises the following steps: forming a second sacrificial protrusion on the piezoelectric thin film layer; depositing and patterning a conductive material on the piezoelectric film layer formed with the second sacrificial protrusion, wherein the conductive material deposited on the upper surface of the second sacrificial protrusion forms a second parallel wing, and the conductive material deposited on the piezoelectric film layer serves as an upper electrode; the second sacrificial protrusion is released to form a gap between the second parallel wing and the piezoelectric film layer.
As one embodiment, in forming the piezoelectric thin film layer on the wafer substrate, the wafer substrate includes a single crystal substrate, so that the piezoelectric thin film layer is a single crystal thin film.
In another aspect, the embodiment of the present application provides a bulk acoustic wave resonator, which is manufactured by using the method for manufacturing a bulk acoustic wave resonator, including: the device comprises a substrate and a support piece arranged on the substrate, wherein the upper surface of the support piece is recessed to form a groove, a lower electrode, a piezoelectric film layer and an upper electrode are sequentially arranged on the support piece, the piezoelectric film layer and the groove form a cavity, the overlapping area of the upper electrode, the piezoelectric film layer, the lower electrode and the cavity is an effective resonance area, the edges of the lower electrode and the upper electrode are respectively connected through connecting ends to form a first parallel wing and a second parallel wing, and gaps are reserved between the first parallel wing and the second parallel wing and between the piezoelectric film layer.
As an implementation manner, the sides of the upper electrode and the lower electrode, which are far away from the piezoelectric film layer, are respectively provided with a lower boundary ring and an upper boundary ring, wherein the lower boundary ring covers the first parallel wings, and the upper boundary ring covers the second parallel wings.
As an embodiment, the piezoelectric thin film layer is a single crystal thin film.
The beneficial effects of the embodiment of the application include:
The preparation method of the bulk acoustic wave resonator provided by the application comprises the following steps: forming a piezoelectric thin film layer on a wafer substrate; forming a lower electrode on the piezoelectric film layer, wherein the edge of one side of the projection of the lower electrode on the wafer substrate is flush with the edge of one side of the projection of the piezoelectric film layer on the wafer substrate, the projection of the lower electrode is in the projection range of the piezoelectric film layer, a first parallel wing is formed on the edge of the lower electrode through a connecting section, and a gap is reserved between the first parallel wing and the piezoelectric film layer; forming a support piece on the piezoelectric film layer forming the lower electrode, forming a cavity between the support piece and the piezoelectric film layer, wherein the cavity is communicated with the gap; bonding the wafer base with the substrate through the support and removing the wafer base; an upper electrode is formed on the piezoelectric film layer, one side edge of projection of the upper electrode on the substrate is flush with the other side edge of projection of the piezoelectric film layer on the substrate, projection of the upper electrode is in a projection range of the piezoelectric film layer, the edge of the upper electrode is connected with a second parallel wing through a connecting section, a gap is formed between the second parallel wing and the piezoelectric film layer, projection of the upper electrode, the piezoelectric film layer, a lower electrode and a cavity on the substrate is provided with an overlapped effective resonance area, when the bulk acoustic resonator works, the upper electrode and the lower electrode are respectively connected with the positive electrode and the negative electrode of a signal source, so that a voltage difference is generated between the upper electrode and the lower electrode to form an electric field, the piezoelectric film layer is arranged between the upper electrode and the lower electrode, vibration is generated by the piezoelectric film layer under the action of the electric field to form sound waves, materials different from the upper electrode and the lower electrode are filled in the gap, and the sound waves of a transverse mode in the effective resonance area can be reflected, so that leakage of transverse waves is reduced, and the Q value of the bulk acoustic resonator is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 2 is a second flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 3 is a third flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 4 is a flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 5 is a flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 6 is a second flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 7 is a third flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 8 is a flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 9 is a flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 10 is a flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 11 is a flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 12 is a flowchart illustrating a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 13 is a flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 14 is a flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 15 is a flowchart of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 16 is a schematic structural diagram of a bulk acoustic wave resonator according to an embodiment of the present application;
Fig. 17 is a second schematic structural diagram of a bulk acoustic wave resonator according to an embodiment of the present application.
Icon: a 100-bulk acoustic wave resonator; 111-wafer substrate; 112-a piezoelectric thin film layer; 113-a lower electrode; 114-a connection segment; 115-first parallel wings; 116-gap; 117-support; 118-cavity; 119-substrate; 120-upper electrode; 121-a second parallel wing; 122-a lower boundary ring; 123-first sacrificial bumps; 124-a sacrificial layer; 125-a second sacrificial protrusion; 126-upper boundary ring.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, directions or positional relationships indicated by terms such as "center", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in place when the product of this application is used, are merely for convenience of describing the present application and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present application, it should also be noted that the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, unless otherwise explicitly specified and defined, and that the specific meaning of the terms in the present application will be understood to those of ordinary skill in the art.
The sound wave generated by the bulk acoustic wave resonator comprises transverse wave and longitudinal wave, and the transverse wave of the bulk acoustic wave resonator excited vertically cannot be well limited in the resonator, and can leak to a non-resonant area and enter a substrate at the junction of the resonant area and the non-resonant area, so that the Q value of the resonator is reduced.
The application provides a preparation method of a bulk acoustic wave resonator 100, as shown in fig. 1, comprising:
S110, as shown in FIG. 5, a piezoelectric thin film layer 112 is formed on a wafer substrate 111;
Specifically, the mode of forming the piezoelectric thin film layer 112 is not limited in the embodiment of the present application, and may be physical vapor deposition, chemical vapor deposition, plasma-assisted molecular beam epitaxy, metal-organic chemical vapor deposition, or the like, as long as the piezoelectric thin film layer 112 can be uniformly formed on the wafer substrate 111. The specific material of the piezoelectric thin film layer 112 is not particularly limited, and may be lithium tantalate, aluminum nitride, lithium niobate, barium strontium titanate, or the like having piezoelectric effect. Wafer substrate 111 the embodiments of the present application are not particularly limited, and may be made of sapphire, silicon, etc. commonly used in semiconductor fabrication.
S120, as shown in FIG. 7, forming a lower electrode 113 on the piezoelectric film layer 112, wherein one side edge of the projection of the lower electrode 113 on the wafer substrate 111 is flush with one side edge of the projection of the piezoelectric film layer 112 on the wafer substrate 111, the projection of the lower electrode 113 is within the projection range of the piezoelectric film layer 112, a first parallel wing 115 is formed on the edge of the lower electrode 113 through a connecting section 114, and a gap 116 is formed between the first parallel wing 115 and the piezoelectric film layer 112;
It should be understood by those skilled in the art that, in operation of the bulk acoustic wave resonator 100, the upper electrode 120 and the lower electrode 113 are respectively connected to the positive electrode and the negative electrode of the power signal, so that the lower electrode 113 includes an electrical connection portion and a resonance portion connected to the electrical connection portion, the resonance portion of the lower electrode 113, the resonance portion of the upper electrode 120 and the piezoelectric layer are stacked to form an effective resonance region, and it should be understood that in order to reduce leakage of transverse waves at boundaries of the effective resonance region and the non-effective resonance region, the first parallel wings 115 are disposed at edges of the resonance region of the lower electrode 113. One side edge of the projection of the lower electrode 113 on the wafer substrate 111 is flush with one side edge of the projection of the piezoelectric thin film layer 112 on the wafer substrate 111, wherein the edge of the electrical connection part of the lower electrode 113 is flush with the edge of the piezoelectric thin film layer 112, so that the resonance area of the lower electrode 113 is positioned at the middle part of the piezoelectric thin film layer 112, and an effective resonance area is formed with the piezoelectric thin film layer 112 conveniently.
S130, as shown in FIG. 10, a supporting piece 117 is formed on the piezoelectric film layer 112 forming the lower electrode 113, a cavity 118 is formed between the supporting piece 117 and the piezoelectric film layer 112, and the cavity 118 is communicated with the gap 116;
S140, as shown in fig. 11 and 12, bonding the wafer base 111 and the substrate 119 through the support and removing the wafer base 111;
the wafer base 111 is bonded with the substrate 119 by a support and the wafer base 111 is removed so that the other side face of the piezoelectric thin film layer 112 is exposed.
The specific method for removing the wafer substrate 111 is not particularly limited in the embodiment of the present application, and may be dry etching, wet etching, laser etching, or the like.
As shown in fig. 14, an upper electrode 120 is formed on the piezoelectric thin film layer 112, one side edge of the projection of the upper electrode 120 on the substrate 119 is flush with the other side edge of the projection of the piezoelectric thin film layer 112 on the substrate 119, the projection of the upper electrode 120 is within the projection range of the piezoelectric thin film layer 112, the edge of the upper electrode 120 is connected with a second parallel wing 121 through a connecting section 114, a gap 116 is formed between the second parallel wing 121 and the piezoelectric thin film layer 112, and the projections of the upper electrode 120, the piezoelectric thin film layer 112, the lower electrode 113 and the cavity 118 on the substrate 119 have overlapping effective resonance areas.
The reason why the first parallel wing 115 is disposed at the edge of the resonance region of the lower electrode 113 is the same as that described above, the first parallel wing 115 is disposed at the edge of the resonance region of the upper electrode 120, and the upper electrode 120 includes an electrical connection portion and a resonance portion connected to the electrical connection portion, and it should be noted that, for facilitating the connection of the power signal, the electrical connection portion of the upper electrode 120 and the electrical connection portion of the lower electrode 113 are disposed at opposite sides of the bulk acoustic wave resonator 100, respectively.
As shown in fig. 17, in order to reduce the influence of the edges of the upper electrode 120 and the lower electrode 113 on the propagation of sound waves, the edges of the upper electrode 120 and the lower electrode 113 are generally provided with irregular curves, and of course, the irregular curves are not limited to the edges of the lower electrode 113, but may be pentagonal or other patterns.
When the bulk acoustic wave resonator 100 prepared by the preparation method of the bulk acoustic wave resonator 100 provided by the application works, the upper electrode 120 and the lower electrode 113 are respectively connected with the positive electrode and the negative electrode of a signal source, so that a voltage difference is generated between the upper electrode 120 and the lower electrode 113 to form an electric field, the piezoelectric film layer 112 is arranged between the upper electrode 120 and the lower electrode 113, the piezoelectric film layer 112 vibrates under the action of the electric field to form an acoustic wave, and the gap 116 is filled with materials different from the upper electrode 120 and the lower electrode 113, so that the acoustic impedance in the gap 116 is not matched with the acoustic impedance in an effective resonance area, and the acoustic wave of a transverse mode in the effective resonance area can be reflected, thereby reducing the leakage of transverse waves and improving the Q value of the bulk acoustic wave resonator 100. The upper electrode and the lower electrode are connected to the positive electrode and the negative electrode of the signal source, respectively, and in practical application, the power source connected between the upper electrode and the lower electrode may be an alternating signal source, and in this case, only the upper electrode and the lower electrode are connected to two terminals of the signal source, respectively.
Optionally, a lower electrode 113 is formed on the piezoelectric thin film layer 112, a projected side edge of the lower electrode 113 on the wafer substrate 111 is flush with a projected side edge of the piezoelectric thin film layer 112 on the wafer substrate 111, the projected side edge of the lower electrode 113 is within a projected range of the piezoelectric thin film layer 112, a first parallel wing 115 is formed on an edge of the lower electrode 113 through the connection section 114, and after a gap 116 is formed between the first parallel wing 115 and the piezoelectric thin film layer 112, the method for preparing the bulk acoustic wave resonator 100 further includes:
s120' As shown in FIG. 8, a lower boundary ring 122 is formed on the lower electrode 113, the lower boundary ring 122 covering the first parallel wings 115.
The lower boundary ring 122 is disposed on the lower electrode 113 and covers the first parallel wings 115, such that the lower boundary ring 122 and the first parallel wings 115 form two different material layers on the gap 116 and have different acoustic impedances, thereby forming an acoustic reflection structure, and when the transverse wave propagates to the gap 116, more transverse wave can be reflected back to the effective resonance region to continue to propagate under the reflection of the two reflection modes of the acoustic reflection structure and the gap 116, thereby improving the Q value of the bulk acoustic wave resonator 100.
Specifically, in the process of preparing the lower boundary ring 122, a layer of material may be deposited on the lower electrode 113, and the annular lower boundary ring 122 may be formed by photolithography on the material using a mask. Wherein the shape of the lower boundary ring 122 is the same as the shape of the first parallel wing 115.
In one implementation manner of the embodiment of the present application, an upper electrode 120 is formed on the piezoelectric thin film layer 112, one side edge of the projection of the upper electrode 120 on the substrate 119 is flush with the other side edge of the projection of the piezoelectric thin film layer 112 on the substrate 119, the projection of the upper electrode 120 is within the projection range of the piezoelectric thin film layer 112, the edge of the upper electrode 120 is connected to form a second parallel wing 121 through a connection segment 114, a gap 116 is formed between the second parallel wing 121 and the piezoelectric thin film layer 112, and after the projection of the upper electrode 120, the piezoelectric thin film layer 112, the lower electrode 113 and the cavity 118 on the substrate 119 has an overlapping effective resonance region, the preparation method of the bulk acoustic wave resonator 100 further includes:
S150': as shown in FIG. 15, an upper boundary ring 126 is formed on the upper electrode 120, the upper boundary ring 126 covering the second parallel wings 121. The structure, fabrication method and advantages of the upper boundary ring 126 are the same as those of the lower boundary ring 122, and are not described in detail herein.
Optionally, as shown in fig. 2, a lower electrode 113 is formed on the piezoelectric thin film layer 112, a side edge of a projection of the lower electrode 113 on the wafer substrate 111 is flush with a side edge of a projection of the piezoelectric thin film layer 112 on the wafer substrate 111, the projection of the lower electrode 113 is within a projection range of the piezoelectric thin film layer 112, a first parallel wing 115 is formed on an edge of the lower electrode 113 through a connection section 114, and a gap 116 is provided between the first parallel wing 115 and the piezoelectric thin film layer 112, including:
S121, as shown in fig. 6, forming a first sacrificial protrusion 123 on the piezoelectric layer;
specifically, the process of forming the first sacrificial protrusion 123 on the piezoelectric layer is not limited, and exemplary embodiments may be formed by using a mask plate to cover photolithography after depositing the sacrificial material.
The first sacrificial protrusion 123 is provided in order to form the first parallel wing 115 at the edge of the lower electrode 113, so the shape of the first sacrificial protrusion 123 along a section parallel to the plane of the piezoelectric thin film layer 112 should be matched with the first parallel wing 115, and the first parallel wing 115 is formed at the edge of the lower electrode 113 such that the first sacrificial protrusion 123 is matched with the edge of the lower electrode 113, which may be, for example, irregularly annular.
S122, as shown in fig. 7, depositing a conductive material on the piezoelectric film formed with the first sacrificial protrusion 123, the conductive material deposited on the upper surface of the first sacrificial protrusion 123 being the first parallel wing 115, the conductive material deposited on the piezoelectric film layer 112 being the lower electrode 113;
In order to form the gap 116 between the first parallel wings 115 and the piezoelectric film layer 112, the conductive material needs to cover the upper surface of the first sacrificial protrusion 123, and the connection section 114 is formed of the conductive material deposited on the side of the first sacrificial protrusion 123.
The first sacrificial protrusion 123 may be rectangular or trapezoidal, for example, trapezoidal, along a plane perpendicular to the piezoelectric film layer 112, so that the conductive material deposited on the waist of one side of the trapezoid serves as the connection section 114, and the trapezoid is arranged to enable the connection section 114 to have a certain inclination, so that the conductive material can more easily fall on the side wall of the first sacrificial protrusion 123 to form a level when deposited, and the reliability of the first parallel wing 115 can be improved.
The first sacrificial protrusion 123 is released so that a gap 116 is formed between the first parallel wings 115 and the piezoelectric film layer 112.
In one implementation manner of the embodiment of the present application, as shown in fig. 3, a support 117 is formed on the piezoelectric film layer 112 forming the lower electrode 113, a cavity 118 is formed between the support 117 and the piezoelectric film layer 112, and the cavity 118 is in communication with the gap 116, which includes:
S131, as shown in fig. 9, a sacrificial layer 124 is formed on the piezoelectric thin film layer 112 on which the lower electrode 113 is formed, the sacrificial layer 124 covering the lower boundary ring 122 and the first parallel wings 115;
s132, as shown in fig. 10, forming a supporting member 117 on the piezoelectric thin film layer 112 on which the sacrificial layer 124 is formed;
the release sacrificial layer 124 and the first sacrificial protrusion 123 form the cavity 118S 133.
Optionally, as shown in fig. 4, an upper electrode 120 is formed on the piezoelectric film layer 112, one side edge of the projection of the upper electrode 120 on the substrate 119 is flush with the other side edge of the projection of the piezoelectric film layer 112 on the substrate 119, the projection of the upper electrode 120 is within the projection range of the piezoelectric film layer 112, the edge of the upper electrode 120 is connected with a second parallel wing 121 through a connection segment 114, a gap 116 is formed between the second parallel wing 121 and the piezoelectric film layer 112, and the projection of the upper electrode 120, the piezoelectric film layer 112, the lower electrode 113 and the cavity 118 on the substrate 119 has overlapping effective resonance areas including:
s151, as shown in fig. 13, forming a second sacrificial protrusion 125 on the piezoelectric thin film layer 112;
S152, as shown in fig. 14, depositing a conductive material on the piezoelectric thin film layer 112 formed with the second sacrificial protrusion 125, the conductive material deposited on the upper surface of the second sacrificial protrusion 125 forming the second parallel wing 121, the conductive material deposited on the piezoelectric thin film layer 112 as the upper electrode 120;
the second sacrificial protrusion 125 is released to form a gap 116 between the second parallel wings 121 and the piezoelectric film layer 112S 153.
The step of forming the upper electrode 120 is the same as that of the lower electrode 113, and will not be described again.
The materials of the first sacrificial protrusion 123, the second sacrificial protrusion 125 and the sacrificial layer 124 are not limited in this embodiment, and may be PSG (phosphosilicate glass), silicon dioxide, doped silicon dioxide, polysilicon or amorphous silicon, for example, and the release agent may be injected into the first sacrificial protrusion 123, the second sacrificial protrusion 125 and the sacrificial layer 124 during the release process, so as to release the materials in the first sacrificial protrusion 123, the second sacrificial protrusion 125 and the sacrificial layer 124.
It should be noted that, in order to improve the manufacturing efficiency of the bulk acoustic wave resonator 100, the release of the second sacrificial protrusion 125 in step S153, the release of the sacrificial layer 124 in step S133, and the release of the first sacrificial protrusion 123 in step 123 may be performed simultaneously in a single release process, and specifically, as shown in fig. 15 to 16, the release of the second sacrificial protrusion 125, the first sacrificial protrusion 123, and the sacrificial layer 124 may be completed in one release after the end of the manufacturing process of the upper boundary ring 126.
In one implementation of the embodiment of the present application, in forming the piezoelectric thin film layer 112 on the wafer substrate 111, the wafer substrate 111 includes a single crystal substrate, so that the piezoelectric thin film layer 112 is a single crystal thin film.
Those skilled in the art will appreciate that the piezoelectric effect is relatively obvious when the piezoelectric thin film layer 112 is a single crystal piezoelectric layer, and the bulk acoustic wave resonator 100 formed has a higher acoustic wave transmission speed, a better crystallinity and a higher piezoelectric constant, so that the resonator obtains a higher Q value and an electromechanical coupling coefficient, and in order to make the piezoelectric thin film layer 112 be a single crystal piezoelectric layer, the wafer substrate 111 must be set to be a single crystal substrate, and due to the crystal structure rule of the single crystal substrate, when the piezoelectric thin film layer 112 is deposited on the single crystal substrate, the piezoelectric material and the single crystal substrate with the regular structure combine to form the piezoelectric thin film layer with the regular structure, that is, the single crystal piezoelectric layer.
The embodiment of the application also discloses a bulk acoustic wave resonator 100, which is manufactured by adopting the manufacturing method of the bulk acoustic wave resonator 100, and comprises the following steps: the substrate 119 and the support 117 that sets up on the substrate 119, the recess is formed to support 117 upper surface, has set gradually bottom electrode 113, piezoelectric film layer 112 and upper electrode 120 on the support 117, and piezoelectric film layer 112 and recess formation cavity 118, and upper electrode 120, piezoelectric film layer 112, bottom electrode 113 and cavity 118 coincide the region be effective resonance region, and the edge of bottom electrode and the edge of upper electrode are formed with first parallel wing and second parallel wing through the link connection respectively, all have the clearance between first parallel wing and second parallel wing and the piezoelectric film layer.
When the bulk acoustic resonator 100 works, the upper electrode 120 and the lower electrode 113 are respectively connected with the positive electrode and the negative electrode of the signal source, so that a voltage difference is generated between the upper electrode 120 and the lower electrode 113 to form an electric field, the piezoelectric thin film layer 112 is arranged between the upper electrode 120 and the lower electrode 113, the piezoelectric thin film layer 112 vibrates under the action of the electric field to form an acoustic wave, and the gap 116 is filled with materials different from the upper electrode 120 and the lower electrode 113, so that acoustic impedance in the gap 116 is not matched with acoustic impedance in an effective resonance area, and acoustic waves of a transverse mode in the effective resonance area can be reflected, so that leakage of transverse waves is reduced, and accordingly, the Q value of the bulk acoustic resonator 100 is improved.
Optionally, the sides of the upper electrode and the lower electrode away from the piezoelectric film layer are respectively provided with a lower boundary ring 122 and an upper boundary ring 126, the lower boundary ring 122 covers the first parallel wing, and the upper boundary ring 126 covers the second parallel wing.
The lower boundary ring 122 is disposed on the lower electrode 113 and covers the first parallel wings 115, such that the lower boundary ring 122 and the first parallel wings 115 form two different material layers on the gap 116 and have different acoustic impedances, thereby forming an acoustic reflection structure, and when the transverse wave propagates to the gap 116, more transverse wave can be reflected back to the effective resonance region to continue to propagate under the reflection of the two reflection modes of the acoustic reflection structure and the gap 116, thereby improving the Q value of the bulk acoustic wave resonator 100. Similarly, the upper boundary ring 126 can also be provided to increase the Q value of the bulk acoustic wave resonator.
In one implementation of an embodiment of the present application, piezoelectric film layer 112 is a single crystal film.
The piezoelectric effect is relatively obvious when the piezoelectric thin film layer 112 is a single crystal piezoelectric layer, and the formed bulk acoustic wave resonator 100 has higher acoustic wave transmission speed, better crystallinity and higher piezoelectric constant, so that the resonator obtains higher Q value and electromechanical coupling coefficient.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (8)
1. A method of manufacturing a bulk acoustic wave resonator, comprising:
forming a piezoelectric thin film layer on a wafer substrate;
Forming a lower electrode on the piezoelectric film layer, wherein the edge of one side of the projection of the lower electrode on the wafer substrate is flush with the edge of one side of the projection of the piezoelectric film layer on the wafer substrate, the projection of the lower electrode is in the projection range of the piezoelectric film layer, the edge of the lower electrode is connected with a first parallel wing through a connecting section, and a gap is formed between the first parallel wing and the piezoelectric film layer;
forming a lower boundary ring on the lower electrode, wherein the lower boundary ring covers the first parallel wings, and the shape of the lower boundary ring is the same as that of the first parallel wings;
forming a support on the piezoelectric thin film layer on which the lower electrode is formed, the support and the piezoelectric thin film layer forming a cavity, the cavity communicating with the gap;
the wafer base is bonded with the substrate through the supporting piece and removed;
forming an upper electrode on the piezoelectric film layer, wherein one side edge of the projection of the upper electrode on the substrate is flush with the other side edge of the projection of the piezoelectric film layer on the substrate, the projection of the upper electrode is in the projection range of the piezoelectric film layer, the edge of the upper electrode is connected with a second parallel wing through a connecting section, a gap is formed between the second parallel wing and the piezoelectric film layer, and the projections of the upper electrode, the piezoelectric film layer, the lower electrode and the cavity on the substrate are provided with overlapping effective resonance areas;
Forming a lower electrode on the piezoelectric film layer, wherein one side edge of projection of the lower electrode on the wafer substrate is flush with one side edge of projection of the piezoelectric film layer on the wafer substrate, the projection of the lower electrode is in the projection range of the piezoelectric film layer, the edge of the lower electrode is connected with a first parallel wing through a connecting section, and a gap is formed between the first parallel wing and the piezoelectric film layer, and the gap comprises:
forming a first sacrificial protrusion on the piezoelectric thin film layer;
Depositing and patterning a conductive material on the piezoelectric thin film layer formed with the first sacrificial protrusion, wherein the conductive material deposited on the upper surface of the first sacrificial protrusion is used as a first parallel wing, and the conductive material deposited on the piezoelectric thin film layer is used as a lower electrode;
the first sacrificial protrusion is released to form a gap between the first parallel wing and the piezoelectric film layer.
2. The method of manufacturing a bulk acoustic wave resonator according to claim 1, wherein an upper electrode is formed on the piezoelectric thin film layer, a projected side edge of the upper electrode on the substrate is flush with a projected side edge of the piezoelectric thin film layer on the substrate, the projected side edge of the upper electrode is within a projected range of the piezoelectric thin film layer, the edges of the upper electrode are connected by a connection section to form a second parallel wing, a gap is provided between the second parallel wing and the piezoelectric thin film layer, and after the projections of the upper electrode, the piezoelectric thin film layer, the lower electrode, and the cavity on the substrate have overlapping effective resonance areas, the method further comprises:
an upper boundary ring is formed on the upper electrode, the upper boundary ring covering the second parallel wing.
3. The method of manufacturing a bulk acoustic wave resonator according to claim 2, wherein the forming a support on the piezoelectric thin film layer on which the lower electrode is formed, the support and the piezoelectric thin film layer having a cavity formed therebetween, the cavity communicating with the gap comprises:
Forming a sacrificial layer on the piezoelectric thin film layer on which the lower electrode is formed, the sacrificial layer covering the lower boundary ring and the first parallel wings;
forming a support on the piezoelectric thin film layer on which the sacrificial layer is formed;
Releasing the sacrificial layer and the first sacrificial protrusion forms the cavity.
4. The method of manufacturing a bulk acoustic wave resonator according to claim 1, wherein the forming an upper electrode on the piezoelectric thin film layer, wherein a projected edge of the upper electrode on the substrate is flush with a projected edge of the piezoelectric thin film layer on the other side of the substrate, wherein the projected edge of the upper electrode is within a projected range of the piezoelectric thin film layer, wherein the edges of the upper electrode are connected by a connecting section to form a second parallel wing, wherein a gap is provided between the second parallel wing and the piezoelectric thin film layer, and wherein the projected projections of the upper electrode, the piezoelectric thin film layer, the lower electrode, and the cavity on the substrate have overlapping effective resonance areas comprises:
Forming a second sacrificial protrusion on the piezoelectric film layer;
depositing and patterning a conductive material on the piezoelectric thin film layer formed with the second sacrificial protrusion, wherein the conductive material deposited on the upper surface of the second sacrificial protrusion forms a second parallel wing, and the conductive material deposited on the piezoelectric thin film layer serves as an upper electrode;
the second sacrificial protrusion is released to form a gap between the second parallel wing and the piezoelectric film layer.
5. The method of manufacturing a bulk acoustic wave resonator according to claim 1, wherein in forming a piezoelectric thin film layer on a wafer substrate, the wafer substrate comprises a single crystal substrate, so that the piezoelectric thin film layer is a single crystal thin film.
6. A bulk acoustic wave resonator manufactured by the method of any one of claims 1 to 5, comprising: the piezoelectric thin film layer and the groove form a cavity, the upper electrode, the piezoelectric thin film layer, the area where the lower electrode and the cavity coincide are used as effective resonance areas, the edge of the lower electrode and the edge of the upper electrode are respectively connected through connecting sections to form a first parallel wing and a second parallel wing, and gaps are reserved between the first parallel wing and the second parallel wing and between the piezoelectric thin film layer;
The preparation method of the lower electrode comprises the following steps: forming a first sacrificial protrusion on the piezoelectric thin film layer; depositing and patterning a conductive material on the piezoelectric thin film layer formed with the first sacrificial protrusion, wherein the conductive material deposited on the upper surface of the first sacrificial protrusion is used as a first parallel wing, and the conductive material deposited on the piezoelectric thin film layer is used as a lower electrode; the first sacrificial protrusion is released to form a gap between the first parallel wing and the piezoelectric film layer.
7. The bulk acoustic resonator according to claim 6, characterized in that a lower boundary ring and an upper boundary ring are respectively provided on the sides of the upper electrode and the lower electrode away from the piezoelectric thin film layer, the lower boundary ring covering the first parallel wing and the upper boundary ring covering the second parallel wing.
8. The bulk acoustic resonator according to claim 6, characterized in that the piezoelectric thin film layer is a single crystal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210553350.5A CN114900151B (en) | 2022-05-20 | 2022-05-20 | Bulk acoustic wave resonator and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210553350.5A CN114900151B (en) | 2022-05-20 | 2022-05-20 | Bulk acoustic wave resonator and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114900151A CN114900151A (en) | 2022-08-12 |
| CN114900151B true CN114900151B (en) | 2024-05-10 |
Family
ID=82724206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210553350.5A Active CN114900151B (en) | 2022-05-20 | 2022-05-20 | Bulk acoustic wave resonator and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114900151B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110868177A (en) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Resonator and filter |
| CN111988006A (en) * | 2020-08-18 | 2020-11-24 | 武汉衍熙微器件有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
| CN112039486A (en) * | 2020-06-16 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Film bulk acoustic resonator and method for manufacturing the same |
| CN113258901A (en) * | 2021-06-28 | 2021-08-13 | 深圳汉天下微电子有限公司 | Acoustic resonator, method of manufacturing the same, and filter including the same |
| WO2021254343A1 (en) * | 2020-06-16 | 2021-12-23 | 中芯集成电路（宁波）有限公司上海分公司 | Thin-film bulk acoustic wave resonator and manufacturing method therefor |
| CN114070233A (en) * | 2020-08-04 | 2022-02-18 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, filter and electronic device with reduced parasitic mode |
| CN114079430A (en) * | 2020-08-12 | 2022-02-22 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with laminated bump structure, method of manufacturing the same, filter, and electronic apparatus |
| CN114421910A (en) * | 2022-01-20 | 2022-04-29 | 武汉敏声新技术有限公司 | Resonator, preparation method thereof and filter |
| CN114421913A (en) * | 2022-01-20 | 2022-04-29 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
-
2022
- 2022-05-20 CN CN202210553350.5A patent/CN114900151B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110868177A (en) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Resonator and filter |
| CN112039486A (en) * | 2020-06-16 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Film bulk acoustic resonator and method for manufacturing the same |
| WO2021254343A1 (en) * | 2020-06-16 | 2021-12-23 | 中芯集成电路（宁波）有限公司上海分公司 | Thin-film bulk acoustic wave resonator and manufacturing method therefor |
| CN114070233A (en) * | 2020-08-04 | 2022-02-18 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, filter and electronic device with reduced parasitic mode |
| CN114079430A (en) * | 2020-08-12 | 2022-02-22 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with laminated bump structure, method of manufacturing the same, filter, and electronic apparatus |
| CN111988006A (en) * | 2020-08-18 | 2020-11-24 | 武汉衍熙微器件有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
| CN113258901A (en) * | 2021-06-28 | 2021-08-13 | 深圳汉天下微电子有限公司 | Acoustic resonator, method of manufacturing the same, and filter including the same |
| CN114421910A (en) * | 2022-01-20 | 2022-04-29 | 武汉敏声新技术有限公司 | Resonator, preparation method thereof and filter |
| CN114421913A (en) * | 2022-01-20 | 2022-04-29 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| LiNbO_3单晶薄膜体声波谐振器的研制;彭霄;田本朗;毛世平;杜波;蒋欣;徐阳;马晋毅;蒋平英;;压电与声光(第03期);全文 * |
| 彭霄 ; 田本朗 ; 毛世平 ; 杜波 ; 蒋欣 ; 徐阳 ; 马晋毅 ; 蒋平英 ; .LiNbO_3单晶薄膜体声波谐振器的研制.压电与声光.2019,(第03期),全文. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114900151A (en) | 2022-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110324022B (en) | Resonator and preparation method thereof | |
| KR100806504B1 (en) | Bulk acoustic resonator perimeter reflection system | |
| US6842088B2 (en) | Thin film acoustic resonator and method of producing the same | |
| US20240040930A1 (en) | Hybrid structure for a surface acoustic wave device | |
| CN112039469B (en) | Method for manufacturing film bulk acoustic resonator | |
| JP2005509348A (en) | Filter device and manufacturing method thereof | |
| JP2021536158A (en) | Thin-film bulk acoustic wave resonator and its manufacturing method | |
| CN112787614B (en) | Film lamb wave resonator, filter and manufacturing method thereof | |
| KR102694397B1 (en) | Bulk acoustic resonator and its manufacturing method, filter and electronic device | |
| WO2020199511A1 (en) | Bulk acoustic resonator and manufacturing method therefor, filter, and radio frequency communication system | |
| JP2022507325A (en) | Bulk acoustic wave resonator and its manufacturing method, filter, radio frequency communication system | |
| AU2021407849B2 (en) | Frequency-tunable film bulk acoustic resonator and preparation method therefor | |
| US20210211115A1 (en) | Piezoelectric resonator and manufacturing method of piezoelectric resonator | |
| CN114978094A (en) | Bulk acoustic wave resonator and preparation method thereof | |
| CN114900151B (en) | Bulk acoustic wave resonator and preparation method thereof | |
| CN115603697B (en) | Acoustic resonator, manufacturing method thereof, filter and electronic equipment | |
| WO2020199506A1 (en) | Bulk acoustic wave resonator and manufacturing method therefor, filter and radio-frequency communication system | |
| WO2020199505A1 (en) | Bulk acoustic resonator and manufacturing method thereof, filter, and radio frequency communication system | |
| CN116097562A (en) | Resonator, manufacturing method thereof, filter and electronic equipment | |
| CN221428884U (en) | Bulk acoustic wave resonator and filter | |
| CN219999344U (en) | Film bulk acoustic resonator | |
| CN221305892U (en) | Bulk acoustic wave resonator and filter | |
| CN115589212B (en) | Bulk acoustic wave resonator with thin film package, manufacturing method and filter | |
| CN219960546U (en) | Filter and duplexer | |
| US20210367581A1 (en) | Resonator and filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |