CN113350274A - 具有改进的稳定性的罗库溴铵制剂 - Google Patents

具有改进的稳定性的罗库溴铵制剂 Download PDF

Info

Publication number
CN113350274A
CN113350274A CN202110628966.XA CN202110628966A CN113350274A CN 113350274 A CN113350274 A CN 113350274A CN 202110628966 A CN202110628966 A CN 202110628966A CN 113350274 A CN113350274 A CN 113350274A
Authority
CN
China
Prior art keywords
rocuronium bromide
formulation
buffer
rocuronium
related substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110628966.XA
Other languages
English (en)
Inventor
井辻裕
长原弘毅
神保敬亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maruishi Pharmaceutical Co Ltd
Original Assignee
Maruishi Pharmaceutical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maruishi Pharmaceutical Co Ltd filed Critical Maruishi Pharmaceutical Co Ltd
Priority to CN202110628966.XA priority Critical patent/CN113350274A/zh
Publication of CN113350274A publication Critical patent/CN113350274A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K9/00Medicinal preparations characterised by special physical form
    • A61K9/08Solutions
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K31/00Medicinal preparations containing organic active ingredients
    • A61K31/33Heterocyclic compounds
    • A61K31/395Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins
    • A61K31/535Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having six-membered rings with at least one nitrogen and one oxygen as the ring hetero atoms, e.g. 1,2-oxazines
    • A61K31/5355Non-condensed oxazines and containing further heterocyclic rings
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K31/00Medicinal preparations containing organic active ingredients
    • A61K31/56Compounds containing cyclopenta[a]hydrophenanthrene ring systems; Derivatives thereof, e.g. steroids
    • A61K31/565Compounds containing cyclopenta[a]hydrophenanthrene ring systems; Derivatives thereof, e.g. steroids not substituted in position 17 beta by a carbon atom, e.g. estrane, estradiol
    • A61K31/568Compounds containing cyclopenta[a]hydrophenanthrene ring systems; Derivatives thereof, e.g. steroids not substituted in position 17 beta by a carbon atom, e.g. estrane, estradiol substituted in positions 10 and 13 by a chain having at least one carbon atom, e.g. androstanes, e.g. testosterone
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K31/00Medicinal preparations containing organic active ingredients
    • A61K31/56Compounds containing cyclopenta[a]hydrophenanthrene ring systems; Derivatives thereof, e.g. steroids
    • A61K31/58Compounds containing cyclopenta[a]hydrophenanthrene ring systems; Derivatives thereof, e.g. steroids containing heterocyclic rings, e.g. danazol, stanozolol, pancuronium or digitogenin
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K47/00Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additives; Targeting or modifying agents chemically bound to the active ingredient
    • A61K47/02Inorganic compounds
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K47/00Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additives; Targeting or modifying agents chemically bound to the active ingredient
    • A61K47/06Organic compounds, e.g. natural or synthetic hydrocarbons, polyolefins, mineral oil, petrolatum or ozokerite
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K47/00Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additives; Targeting or modifying agents chemically bound to the active ingredient
    • A61K47/06Organic compounds, e.g. natural or synthetic hydrocarbons, polyolefins, mineral oil, petrolatum or ozokerite
    • A61K47/08Organic compounds, e.g. natural or synthetic hydrocarbons, polyolefins, mineral oil, petrolatum or ozokerite containing oxygen, e.g. ethers, acetals, ketones, quinones, aldehydes, peroxides
    • A61K47/12Carboxylic acids; Salts or anhydrides thereof
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K47/00Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additives; Targeting or modifying agents chemically bound to the active ingredient
    • A61K47/06Organic compounds, e.g. natural or synthetic hydrocarbons, polyolefins, mineral oil, petrolatum or ozokerite
    • A61K47/16Organic compounds, e.g. natural or synthetic hydrocarbons, polyolefins, mineral oil, petrolatum or ozokerite containing nitrogen, e.g. nitro-, nitroso-, azo-compounds, nitriles, cyanates
    • A61K47/18Amines; Amides; Ureas; Quaternary ammonium compounds; Amino acids; Oligopeptides having up to five amino acids
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61KPREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K9/00Medicinal preparations characterised by special physical form
    • A61K9/0012Galenical forms characterised by the site of application
    • A61K9/0019Injectable compositions; Intramuscular, intravenous, arterial, subcutaneous administration; Compositions to be administered through the skin in an invasive manner
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61PSPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P21/00Drugs for disorders of the muscular or neuromuscular system
    • A61P21/02Muscle relaxants, e.g. for tetanus or cramps
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61PSPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P23/00Anaesthetics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides
    • C23C16/345Silicon nitride
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561Gas plumbing upstream of the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

Landscapes

  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pharmacology & Pharmacy (AREA)
  • Veterinary Medicine (AREA)
  • Public Health (AREA)
  • General Health & Medical Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • Medicinal Chemistry (AREA)
  • Epidemiology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Dermatology (AREA)
  • Neurology (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Orthopedic Medicine & Surgery (AREA)
  • Anesthesiology (AREA)
  • Pain & Pain Management (AREA)
  • Physical Education & Sports Medicine (AREA)
  • Medicinal Preparation (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

本发明涉及具有改进的稳定性的罗库溴铵制剂。该制剂包含罗库溴铵和缓冲液并且具有被调节至3.5以下(例如,2.5~3.5)的pH。所述缓冲液可以是柠檬酸‑氢氧化钠缓冲液、酒石酸‑氢氧化钠缓冲液、邻苯二甲酸氢钾‑盐酸缓冲液、甘氨酸‑盐酸缓冲液等。这种罗库溴铵制剂在例如40℃下储存6个月后的罗库溴铵相关物质C的生成率为5%以下。

Description

具有改进的稳定性的罗库溴铵制剂
本申请是申请日为2014年6月26日、申请号为201480076036.6(国际申请号为PCT/JP2014/067023)、发明名称为“具有改进的稳定性的罗库溴铵制剂”的发明专利申请的分案申请。
技术领域
本发明涉及一种具有改进的稳定性的罗库溴铵制剂,以及一种用于改进罗库溴铵制剂的稳定性的方法。
背景技术
罗库溴铵(或罗库溴铵溴化物)被认为是麻醉性肌肉松弛剂等的活性成分(非专利文献1)。
罗库溴铵在水溶液中是相对热不稳定的,因此,其储存和/或运输是麻烦和昂贵的。例如,ESLAX,已知是一种市售的罗库溴铵制剂,需要在2~8℃下冷藏(非专利文献1)。
由于这个原因,已经做了尝试以改进罗库溴铵在水溶液中的稳定性。例如,WO2008/065142(专利文献1)公开了一种通过在含有罗库溴铵的水溶液中加入磺基烷基醚-β-环糊精衍生物或其药学上可接受的盐来稳定所述溶液的技术。
然而,该文件的技术需要磺基烷基醚-β-环糊精衍生物或其药学上可接受的盐,据报道磺基烷基醚-β-环糊精衍生物或其药学上可接受的盐的使用引起肾功能障碍等。所述文件描述了,为了减少注射痛,pH应在3.5~7.5的范围内,优选5.5~7.5。换言之,在所述文件中,在3.5~7.5的pH范围内注射痛的发生是公认的,没有考虑将pH降低到3.5以下。
引文列表
专利文献
专利文献1:WO2008/065142
非专利文献
非专利文献1:ESLAX静脉注射25毫克/2.5毫升和ESLAX静脉注射50毫克/5.0毫升的药物访谈表,2010年10月修订。
发明内容
技术问题
本发明的一个目的是提供一种具有优异的稳定性的罗库溴铵制剂。
本发明的另一个目的是提供一种pH变化高度减少的罗库溴铵制剂。
本发明的另一个目的是提供一种在给药时不引起血管的刺激的罗库溴铵制剂。
本发明的另一个目的是提供一种不引起或引起较少的注射痛的罗库溴铵制剂。
问题的解决方案
为了实现上述目的,本发明人进行了深入的研究并发现,含有罗库溴铵和缓冲液并具有远低于市售产品ESLAX的pH(pH 4.0)的某个范围内的pH的罗库溴铵制剂令人惊讶地表现出明显增加或改进的稳定性,并且尽管具有低的pH,这种罗库溴铵制剂不具有生理上有害的效应,因此可以在改进或者增加所述制剂的稳定性的同时被安全地给药。根据该发现,本发明人完成了本发明。
也就是说,本发明的罗库溴铵制剂包含罗库溴铵和缓冲液,并具有在预定范围内的pH(例如,3.5以下)。特别地,所述罗库溴铵制剂的pH可以是约2.5~3.5(例如,2.8~3.2)。
对所述缓冲液没有特别限制,只要其能实现本发明需要的pH即可,并且可以是选自甲酸盐缓冲液、乙酸盐缓冲液、柠檬酸盐缓冲液、酒石酸盐缓冲液、邻苯二甲酸盐缓冲液、磷酸盐缓冲液、柠檬酸-磷酸盐缓冲液和甘氨酸缓冲液的至少一种。特别地,所述缓冲液可以是选自柠檬酸-氢氧化钠缓冲液、酒石酸-氢氧化钠缓冲液、邻苯二甲酸氢钾-盐酸缓冲液和甘氨酸-盐酸缓冲液的至少一种。
典型的罗库溴铵制剂包括具有2.5~3.5的pH并且含有浓度为0.01M以上(例如,0.015M以上)的甘氨酸-盐酸缓冲液的罗库溴铵制剂。
本发明的罗库溴铵制剂的稳定性优异。例如,在40℃下储存6个月后,相关物质C的生成率(通过从在每个测量点的相关物质C的面积百分比中减去相关物质C的最初的面积百分比获得的值)可以是5%以下。
本发明的罗库溴铵制剂可以是注射制剂。除了稳定性之外,这种注射制剂具有防止或减少注射痛和血管刺激(血管的刺激)的效果。相应地,本发明的罗库溴铵制剂(罗库溴铵注射制剂)可以是这样一种罗库溴铵制剂,其在40℃下储存6个月后具有5%以下的罗库溴铵相关物质C的生成率,并且不引起(或者没有可能引起)或引起较少的注射痛和/或血管刺激(特别地,注射痛和血管刺激两者)。
因此,本发明的罗库溴铵制剂具有优异的热稳定性,因此,可以是,具体来说能在室温下储存的制剂。
在本发明中,罗库溴铵制剂的稳定性可以通过将罗库溴铵制剂的pH调节到预定的范围来增加或改进。在这种情况下,本发明也包括一种用于增加或改进罗库溴铵制剂的稳定性的方法,所述方法包括将含有罗库溴铵和缓冲液的罗库溴铵制剂的pH调节到3.5以下(特别地,一种用于增加或改进罗库溴铵制剂的稳定性以使得在40℃下储存6个月后罗库溴铵相关物质C的生成率是5%以下的方法)。
此外,如上所述,本发明的注射制剂具有防止注射痛和血管刺激的效果。在这种情况下,本发明还包括一种方法,其用于防止或减少由罗库溴铵注射制剂引起的注射痛和血管刺激两者并用于增加或改进罗库溴铵注射制剂的稳定性以使得在40℃下储存6个月后罗库溴铵相关物质C的生成率是5%以下,所述方法包括将含有罗库溴铵和缓冲液的罗库溴铵注射制剂的pH调节到3.5以下。
在这些方法中,可以制备所述制剂(罗库溴铵制剂或者罗库溴铵注射制剂)以便能在室温下储存。
发明的有益效果
在本发明中,可以通过将pH调节到某个范围来获得具有优异的稳定性(尤其是热稳定性)的罗库溴铵制剂。例如,本发明的罗库溴铵制剂甚至在非冷藏的条件下长期储存时或者在高温和高压条件下处理时几乎没有分解。另外,可以严格控制pH变化,因此,罗库溴铵制剂是极其稳定的。相应地,罗库溴铵制剂可以在常温下储存,因此是极其实用的。
本发明的罗库溴铵制剂没有生理上有害的效应(或只有微小的有害效应),在这点上也是高度实用的。例如,本发明的罗库溴铵制剂不引起血栓、血管周围炎症等,并且可以无血管刺激地给药。此外,在给药时,所述制剂不引起注射痛或者与商业产品(ESLAX)相比引起少得多的注射痛。因此,本发明的罗库溴铵制剂作为一种能够防止或者减少注射痛和/或血管刺激的制剂也是有效的。另外,本发明的罗库溴铵制剂在没有专利文献1中所描述的组分(磺基烷基醚-β-环糊精衍生物或其药学上可接受的盐)的情况下达到增加的或者改进的稳定性。
因此,本发明的制剂具有优异的稳定性和安全性两者,是极其有用的制剂。
如上所述,本发明的制剂没有生理上有害的效应,鉴于市售的罗库溴铵制剂(ESLAX)的pH确定是比本发明的pH范围更高的pH水平(4.0),考虑到生理上有害的效应(引用自ESLAX的审查报告),这是非常令人惊讶的。
附图说明
图1是显示实施例2、实施例6和比较例2的制剂的基于肌电图的注射痛评估结果的图。
具体实施方式
本发明的罗库溴铵制剂包含罗库溴铵和缓冲液,并且具有在预定范围内的pH。所述罗库溴铵是由下式表示的罗库溴铵溴化物(化学名称:(+)-(17β-乙酰氧基-3α-羟基-2β-吗啉基-5α-雄甾-16β-基)-1-烯丙基-1-吡咯烷鎓溴化物)。
Figure BDA0003101872490000051
对所述制剂中罗库溴铵的百分比没有特别限制,并且根据病情、剂型等适当地选择。例如,所述百分比可以是约0.1~10%w/v,优选约0.5~5%w/v,更优选约0.8~3%w/v。
对所述缓冲液没有特别限制,只要其能实现本发明所需的pH即可,并且其实例包括羧酸缓冲液(例如,甲酸盐缓冲液、乙酸盐缓冲液、柠檬酸盐缓冲液、酒石酸盐缓冲液、邻苯二甲酸盐缓冲液等)、磷酸盐缓冲液(例如,磷酸盐缓冲液,柠檬酸-磷酸盐缓冲液等)、氨基酸缓冲液(例如,甘氨酸缓冲液等)等。为了实现本发明所需的pH,合适的缓冲液可以是柠檬酸盐缓冲液(例如,柠檬酸-氢氧化钠缓冲液等)、酒石酸盐缓冲液(例如,酒石酸-氢氧化钠缓冲液等)、邻苯二甲酸盐缓冲液(例如,邻苯二甲酸氢钾-盐酸缓冲液等)和甘氨酸缓冲液(例如,甘氨酸-盐酸缓冲液等)等。特别地,可以使用甘氨酸-盐酸缓冲液。这些缓冲液可以单独使用,或以其两种以上的组合进行使用。这些缓冲液可以是制备的缓冲液或者市售的产品。
对所述制剂中的缓冲液的浓度没有特别限制,并且可以根据缓冲液的类型、所需的pH等适当地选择。所述浓度可以选自范围0.001M以上(例如,0.003~0.8M)、例如0.005M以上(例如,0.008~0.7M),优选0.01M以上(例如,0.015~0.5M),更优选0.02M以上(0.03~0.4M),特别优选0.04M以上(例如,0.05~0.3M)。
特别地,当所述缓冲液是甘氨酸-盐酸缓冲液时,在所述制剂中的浓度可以是例如0.01M以上(例如,0.015~0.8M),优选0.02M以上(例如,0.025~0.6M),更优选0.03M以上(例如,0.04~0.5M),特别地,约0.05M以上(例如,0.06~0.3M)。
所述缓冲液的更高的浓度导致对所述制剂的pH的改变或变化的更有效的控制。
缓冲液的浓度是指表现出缓冲能力(缓冲作用)的组分的浓度,例如,在甘氨酸-盐酸缓冲液的情况下的甘氨酸的浓度。
本发明的罗库溴铵制剂的pH可以是3.5以下(例如,1.8~3.5)、优选3.4以下(例如,2~3.35),更优选3.3以下(例如,2.2~3.3)。特别地,所述罗库溴铵制剂的pH可以是例如2~3.5,优选2.5~3.5(例如,2.8~3.2),通常低于3.5(例如,2~3.4)。所述pH可以是在20~30℃的温度下的值。
本发明的罗库溴铵制剂可以含有按需掺混在其中的其他组分(药物载体等)。这类其他组分的实例包括溶剂、增溶剂、悬浮剂、等渗剂、舒缓剂等。此外,可以按需使用通常应用在制药领域的任何已知的添加剂和药学上可接受的添加剂,例如,防腐剂、抗氧化剂、稳定剂和氧化抑制剂。根据预期剂型等所适用的,这些添加剂可以单独使用,或者作为其两种以上的混合物使用。这些添加剂可以是市售的产品。
对所述溶剂没有特别限制,其实例包括纯净水、乙醇、丙二醇、聚乙二醇、聚乙二醇(macrogol)、芝麻油、玉米油、橄榄油等。对所述增溶剂没有特别限制,其实例包括丙二醇、D-甘露醇、苯甲酸苄酯、乙醇、三乙醇胺、碳酸钠、柠檬酸钠等。对所述悬浮剂没有特别限制,其实例包括苯扎氯铵,羧甲基纤维素,羟丙基纤维素,丙二醇,聚乙烯吡咯烷酮、甲基纤维素、甘油单硬脂酸酯、月桂基硫酸钠、卵磷脂、聚乙烯醇等。对所述等渗剂没有特别限制,其实例包括葡萄糖、D-山梨醇、氯化钠、D-甘露醇、甘油等。对所述舒缓剂没有特别限制,其实例包括苯甲醇等。
对所述防腐剂没有特别限制,其实例包括对羟基苯甲酸乙酯、氯丁醇、苯甲醇、脱氢乙酸钠、山梨酸等。对所述抗氧化剂没有特别限制,其实例包括亚硫酸钠、抗坏血酸等。对所述稳定剂没有特别限制,其实例包括酪蛋白、酪蛋白酸钠等。所述氧化抑制剂的实例包括叔丁基氢醌,丁基羟基茴香醚、丁基羟基甲苯、α-生育酚及其衍生物。
本发明的制剂可以包含专利文献1中描述的特定组分,即磺基烷基醚-β-环糊精衍生物或其药学上可接受的盐,但通常不需要包含该物质。因为在本发明中不需要这种组分,所以可以提供一种稳定化的罗库溴铵制剂,其是高度安全的并且没有肾功能障碍等的风险。
对本发明的罗库溴铵制剂的渗透压没有特别限制,例如可以是250~1000mosmol/kg或260~600mosmol/kg。
本发明的罗库溴铵制剂可以通过例如将罗库溴铵与缓冲液(如果需要的话,以及其他组分)掺混来生产,但生产方法不具体限制于此。
对本发明的罗库溴铵制剂的剂型没有特别限制,但通常是溶液。所述溶液的实例包括胃肠外制剂,例如注射剂(用于静脉注射、动脉注射、肌内注射、皮下注射、皮内注射、腹腔注射、椎管内注射,或硬膜外注射)、眼用制剂和经鼻制剂。
对本发明的罗库溴铵制剂的给药途径没有特别限制,但在使用注射制剂进行胃肠外给药的情况下,优选根据患者的年龄、病情和/或其他病状,从包括静脉内、动脉内、皮下、皮内、肌内和腹腔给药途径的优选途径中合适地选择。
本发明的罗库溴铵制剂的剂量(剂量用法)随年龄、性别和患者的体重、病情的严重程度等变化,因此没有特别限制,但一般来说,活性成分(即罗库溴铵)的每日总剂量通常是约0.01~100毫克,优选约10~60毫克/成人。另外,所述剂量和给药方法随年龄,性别,和患者的体重,疾病的严重程度等变化,因此没有特别限制,但一般来说,可以将每日总剂量每天给药一次或作为多个(例如,2~4个)分剂量给药。在示例性方法中,罗库溴铵以0.6毫克/千克的剂量静脉内给药,并且此外,根据需要,在手术过程中以0.1~0.2毫克/千克的剂量通过持续输注给药。
本发明的罗库溴铵制剂优选在麻醉下使用,虽然这不是必要条件。对麻醉剂没有特别限制,其优选的实例包括吸入麻醉剂和静脉麻醉剂。对所述吸入麻醉剂没有特别限制,其实例包括挥发性吸入麻醉剂,如氟烷、异氟醚、安氟醚、甲氧氟烷、七氟醚和地氟醚;和气态吸入麻醉剂,如乙烯、环氧丙烷、乙醚、氯仿、一氧化二氮和氙气。对所述静脉麻醉剂没有特别限制,其实例包括异丙酚、咪达唑仑、氯胺酮、噻环乙胺、硫喷妥钠、美索比妥和依托咪酯。优选丙泊酚、咪达唑仑等。这些麻醉剂可以单独使用或作为其两种以上的混合物使用。这些麻醉剂可以是市售的产品。
如上所述,本发明的罗库溴铵制剂具有高稳定性。例如,将罗库溴铵制剂在40℃下储存3个月后,罗库溴铵相关物质C的生成率极低,为2.5%以下(例如,0~2.3%),优选2%以下(例如,0.1~1.8%),更优选约1.5%以下(例如,0.2~1.3%)。也可能将罗库溴铵相关物质C的生成率降低到1%以下(例如,0.1~0.8%)。
另外,将罗库溴铵制剂在40℃下储存6个月后,罗库溴铵相关物质C的生成率可以是5%以下(例如,0~4.9%),优选4%以下(例如,0.01~3.9%),更优选约3%以下(例如,0.1~2.9%)。
当罗库溴铵相关物质C的生成率为5%以下时,据判断所述罗库溴铵制剂是能在室温下储存的药物产品。此处,室温是指1~30℃(日本药典)。
因此,本发明的罗库溴铵制剂具有极其优异的稳定性,在储存3个月后罗库溴铵相关物质C的生成率可以被降低到远低于5%的水平,5%是能在室温下储存和不能在室温下储存的边界值。甚至在长期(6个月)储存后,所述生成率仍然可以低于5%,表明所述制剂能在室温下储存。
相关物质C是罗库溴铵的主要分解产物,并且是美国药典(USP)和欧洲药典(EP)中描述的物质。
将所述罗库溴铵制剂在121℃下热处理20分钟后,罗库溴铵相关物质C的生成率极低,为0.7%以下(例如,0~0.6%),优选0.5%以下(例如,0.01~0.45%),更优选约0.4%以下(例如,0.05~0.35%)。也可能将罗库溴铵相关物质C的生成率降低到0.3%以下(例如,0.01~0.3%)。
在本发明中,罗库溴铵制剂的pH变化也可以被最小化。例如,将所述罗库溴铵制剂在40℃下储存6个月后,储存前后的pH差值(或其绝对值)为低至0.25以下(例如,0~0.22),优选0.2以下(例如,0~0.18),更优选约0.15以下(例如,0~0.12),也可以是0.1以下(例如,0~0.08,优选0~0.05,更优选0~0.03)。另外,在将所述罗库溴铵制剂在121℃下热处理20分钟的情况下,热处理前后的pH差值可以选自相似的范围。
因此,在本发明中,具有极高的稳定性的罗库溴铵制剂可以通过调节pH(以及选择适当类型的缓冲液和调节缓冲液的浓度)来获得。在这种情况下,本发明还包括一种通过将包含罗库溴铵和缓冲液的罗库溴铵制剂的pH调节到预定范围(例如,3.5以下)来增加或改进罗库溴铵制剂的稳定性的方法。
本发明的罗库溴铵制剂具有相对低的pH,但没有或几乎没有生理上有害的效应。特别地,本发明的罗库溴铵制剂能够高效地防止或者减少注射痛和/或血管刺激。在这种情况下,本发明还包括一种用于防止或减少(缓解)由罗库溴铵引起的(特别是由罗库溴铵制剂的给药引起的)注射痛和/或血管刺激(特别地,注射痛和血管刺激两者)的方法,所述方法包括将包含罗库溴铵和缓冲液的罗库溴铵制剂(罗库溴铵注射制剂)的pH调节到预定范围(例如,3.5以下)。
本发明涵盖将上述各种结构以发挥本发明的效果的方式在本发明的技术范围内组合的实施方式。
实施例
下文中,本发明将通过实施例更详细地说明,但其不限于此。在本发明的技术思路内可以由本领域普通技术人员做各种修改。
在所述实施例中,如下测定或评估各种属性。
pH
按照在日本药典中的“pH测定”,在20~30℃下进行测量。
相关物质(杂质)C的生成率
按照用于HPLC的USP方法进行测量。
血管刺激
在给药开始之前,用电动剪毛器去除6只(每组3只)14周龄的雄性JW兔中每一只兔子的给药部位上的毛。从靠近左耳后静脉的中部,选择具有较少的小血管分支的3厘米部分(保留部位),所述部分的两端用擦不掉的记号笔进行标记,这两端被称为中枢和外周止血部位。在给药当天,在七氟醚麻醉下(诱导:5%,维持:3%),用所述擦不掉的记号笔标记所述外周止血部位的外周5mm的一个点,用作注射针插入部位。
在给药时,将夹钳连接到所述注射针插入部位外围的部分以阻止血流,并从所述注射针插入部位朝着中枢侧向外围止血部位入注射针。注入0.025毫升的量的样品溶液,并确认局部的血管充满了样品物质。随后,用夹钳将中枢止血部位闭合,注入另外0.025毫升的样品溶液并用夹钳将外围止血部位闭合。接下来,立刻从右耳静脉给药0.2毫升的2.5%w/v的舒更葡糖钠(sugammadex)溶液。在保留样品溶液3分钟后,移除所述夹钳,并在确认动物的自主呼吸后,移除麻醉。对于样品溶液的每天给药来说,尽可能使用相同的保留部位和相同的注射针插入部位。
给药次数:每日一次,连续8天
给药体积:0.05毫升/部位/天
给药方法、给药次数、给药期和给药体积按照府川等人的方法(日本药理学杂志71:307-315,1975)选择。
基于如下所示的肉眼检查标准,每日一次评估血管刺激。
(血栓)
-:无血栓(0毫米)
+:小血栓(1~4毫米)
++:中型血栓(5~14毫米)
+++:大血栓(15毫米以上)
(血管周围的炎症(充血、肿胀))
-:没变化
+:轻微的炎症(限于3厘米长的止血部位)
++:中度炎症(以止血部位为中心的耳廓的1/3)
+++:严重的炎症(整个耳廓的1/2)
注射痛
以1.1克/千克的剂量将氨基甲酸乙酯腹腔注射给大鼠(8周龄的雄性SD大鼠,每组11只动物),去除处理区域周围的毛,并切开皮肤以暴露股动脉附近的血管。以逆行方式将具有预先变成锥形的尖端的PFA管导入约2厘米进入尾部的腹壁浅动脉直至其到达股动脉起始的部位。将同轴针电极(26G)插入左后侧的半腱肌。在手术后,将大鼠保持在37℃下。在给药开始之前,测量基线值30秒钟。将每种受试溶液以50μL的量通过PFA管以0.8毫升/分钟的速度给药,并从给药开始进行30秒的肌电图(EMG)测量。每隔1小时以上对每种受试溶液进行重复给药。在给药之前和最后一次给药之后,向大鼠给药1%异丙酚“Maruishi”(日本产品名称),并且在试验中只用这样的个体来展示肌肉收缩。使用PowerLab(16sp,ADInstruments)进行获得的肌电图的分析。对原始信号进行整流和积分以产生量化的数据(μV·s)。结果被显示为相对于作为100%的给药前的值的百分比值。
实施例1
在注射用水中溶解0.06克甘氨酸、0.67克氯化钠、30克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为2.0。将所述制剂在40℃下储存3个月和6个月后,测定pH和罗库溴铵相关物质C的生成率。在这两种情况下(在储存3个月和6个月后)pH为2.0,罗库溴铵相关物质C的生成率为1.24%(在储存3个月后)和2.52%(在储存6个月后)。
实施例2
在注射用水中溶解0.55克甘氨酸、0.50克氯化钠、30克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为3.0。将所述制剂在40℃下储存3个月和6个月后,测定pH和罗库溴铵相关物质C的生成率。在这两种情况下(在储存3个月和6个月后)pH为3.0,罗库溴铵相关物质C的生成率为0.77%(在储存3个月后)和1.58%(在储存6个月后)。
参考例1
在注射用水中溶解4.58克甘氨酸、30克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为4.0。将所述制剂以与实施例1中相同的方式储存3个月和6个月后,测定pH和罗库溴铵相关物质C的生成率。在这两种情况下pH为4.0,罗库溴铵相关物质C的生成率为2.81%(在储存3个月后)和5.36%(在储存6个月后)。
比较例1
以与实施例1中相同的方式制备其组成与市售的罗库溴铵制剂的组成(乙酸缓冲液,就乙酸离子而言0.15M,pH 4.0)相同的罗库溴铵制剂。将所述制剂以与实施例1中相同的方式储存3个月和6个月后,测定pH和罗库溴铵相关物质C的生成率。在这两种情况下pH为4.0,罗库溴铵相关物质C的生成率为2.53%(在储存3个月后)和5.46%(在储存6个月后)。
结果被概括在表1中。
表1
Figure BDA0003101872490000151
表1中的结果清楚地表明,通过将pH调节到预定的范围,罗库溴铵相关物质C的生成率明显降低,并且与pH为4.0的情况相比,稳定性增加。
特别地,实施例1、实施例2和参考例1的比较显示了令人惊讶的表现,即,随着pH的降低,罗库溴铵相关物质C的生成率并不是简单地降低而是转为提高。另外,在实施例中,pH没有变化,这表明罗库溴铵制剂是极其稳定的。此外,参考例1和比较例1的比较表明,这种稳定性不依赖于缓冲液的类型。
实施例3
在注射用水中溶解1.17克甘氨酸、0.37克氯化钠、45克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为3.0。将所述制剂在121℃下热处理20分钟后,测定pH和罗库溴铵相关物质C的生成率。pH为3.0,罗库溴铵相关物质C的生成率为0.28%。
实施例4
将实施例2中获得的制剂(pH3.0)以与实施例3中同样的方式热处理,然后测定pH和罗库溴铵相关物质C的生成率。pH为3.0,罗库溴铵相关物质C的生成率为0.23%。
实施例5
在注射用水中溶解0.18克甘氨酸、0.64克氯化钠、20克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为3.0。将所述制剂以与实施例3中同样的方式热处理后,测定pH和罗库溴铵相关物质C的生成率。pH为3.1,罗库溴铵相关物质C的生成率为0.23%。
比较例1
将比较例1中获得的制剂(pH4.0)以与实施例3中同样的方式热处理,然后测定pH和罗库溴铵相关物质C的生成率。pH为4.0,罗库溴铵相关物质C的生成率为0.75%。
结果被概括在表2中。
表2
Figure BDA0003101872490000171
表2中的结果清楚地表明,在pH固定的情况下,不论缓冲液浓度的差异如何,罗库溴铵相关物质C的生成率明显降低。甚至在热处理后,pH也没有大幅地改变。
参考例2
在注射用水中溶解0.90克氯化钠、15克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为3.0。将所述制剂以与实施例3中相同的方式热处理后,测定pH。pH为3.3。
参考例2和实施例5的结果被概括在表3中。
Figure BDA0003101872490000172
表3中的结果清楚地表明,没有缓冲液时,pH被热处理大幅地改变。
实施例6
在注射用水中溶解0.55克甘氨酸、0.50克氯化钠、51克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为2.5。将所述制剂以与实施例3中同样的方式热处理后,测定pH和罗库溴铵相关物质C的生成率。pH为2.5,罗库溴铵相关物质C的生成率为0.10%。
实施例7
在注射用水中溶解0.55克甘氨酸、0.50克氯化钠、38克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为2.8。将所述制剂以与实施例3中同样的方式热处理后,测定pH和罗库溴铵相关物质C的生成率。pH为2.8,罗库溴铵相关物质C的生成率为0.14%。
实施例8
在注射用水中溶解0.55克甘氨酸、0.50克氯化钠、27克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为3.2。将所述制剂以与实施例3中同样的方式热处理后,测定pH和罗库溴铵相关物质C的生成率。pH为3.2,罗库溴铵相关物质C的生成率为0.27%。
实施例9
在注射用水中溶解0.55克甘氨酸、0.50克氯化钠、21克0.1M HCl和1.0克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到100毫升。
获得的制剂的pH为3.5。将所述制剂以与实施例3中同样的方式热处理后,测定pH和罗库溴铵相关物质C的生成率。pH为3.5,罗库溴铵相关物质C的生成率为0.31%。
结果被概括在表4中。在表4中,已在表2中示出的实施例4和比较例1的结果被一起示出以供参照。
表4
Figure BDA0003101872490000191
表4中的结果清楚地表明,在pH在预定的范围之内的情况下,不论pH的差异如何,罗库溴铵相关物质C的生成率明显降低。此外,没有观察到显著的pH变化,即,pH变化明显地减少。
实施例10
在注射用水中溶解15克0.1M盐酸、0.45克氯化钠、0.42克邻苯二甲酸氢钾和0.50克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到50毫升。
获得的制剂的pH为3.0。将所述制剂以与实施例3中同样的方式热处理后,测定pH和罗库溴铵相关物质C的生成率。pH为3.0,罗库溴铵相关物质C的生成率为0.25%。
实施例11
在注射用水中溶解0.45克氯化钠、0.34克柠檬酸水合物、2.46克0.1M氢氧化钠溶液和0.50克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到50毫升。
获得的制剂的pH为3.0。将所述制剂以与实施例3中同样的方式热处理后,测定pH和罗库溴铵相关物质C的生成率。pH为3.0,罗库溴铵相关物质C的生成率为0.19%。
实施例12
在注射用水中溶解0.45克氯化钠、0.23克酒石酸、2.50克0.1M氢氧化钠溶液和0.50克罗库溴铵溴化物,并且进一步添加注射用水以将体积调节到50毫升。
获得的制剂的pH为3.0。将所述制剂以与实施例3中同样的方式热处理后,测定pH和罗库溴铵相关物质C的生成率。pH为3.0,罗库溴铵相关物质C的生成率为0.28%。
结果被概括在表5中。在表5中,已在表2中示出的比较例1的结果被一起示出以供参照。
表5
Figure BDA0003101872490000211
表5中的结果清楚地表明,在pH在预定的范围之内的情况下,不论缓冲液类型的差异如何,在热处理后罗库溴铵相关物质C的生成率明显降低,pH变化也明显地减少。
血管刺激评估
分开评估在实施例6中获得的罗库溴铵制剂(pH2.5)和市售的罗库溴铵制剂(商品名:ESLAX(注册商标)静脉注射50毫克/5.0毫升,乙酸盐缓冲液、就乙酸离子而言0.15M,pH4.0)(比较例2)的血管刺激。
结果如表6所示。
表6
Figure BDA0003101872490000221
表6中的结果清楚地表明,尽管pH低于作为市售产品的比较例2的pH,但没有观察到血管刺激。相应地,在本发明中,罗库溴铵安制剂的稳定性增加,而没有引起血管的刺激。
注射痛评估
分开评估在实施例2中获得的罗库溴铵制剂(pH 3.0)、在实施例6中获得的罗库溴铵制剂(pH 2.5)和比较例2的注射痛。
结果如表7和图1所示。
表7
Figure BDA0003101872490000222
表7中的结果清楚地表明,与市售的产品相比,实施例2和实施例6的罗库溴铵制剂将注射痛明显地减少到具有统计学显著性差异的程度。因此,结果表明本发明提供了具有增加的稳定性并且不引起注射痛的罗库溴铵制剂。
工业应用
本发明提供了可用作肌肉松弛剂等的罗库溴铵制剂的稳定性(储存稳定性等)。

Claims (10)

1.一种液体形式的罗库溴铵制剂,其包含罗库溴铵和缓冲液并且具有2.8~3.2的pH,所述缓冲液的浓度为0.015~0.8M,所述缓冲液为仅由甘氨酸缓冲液构成的缓冲液,所述罗库溴铵制剂在40℃下储存3个月后的罗库溴铵相关物质C的生成率是1.5%以下,并且在40℃下储存6个月后的罗库溴铵相关物质C的生成率是3%以下,所述罗库溴铵制剂不冷藏储存。
2.根据权利要求1所述的罗库溴铵制剂,其具有3的pH。
3.根据权利要求1或2所述的罗库溴铵制剂,其中所述缓冲液是甘氨酸-盐酸缓冲液。
4.根据权利要求1~3任一项所述的罗库溴铵制剂,其中,所述缓冲液是浓度为0.025~0.6M的甘氨酸-盐酸缓冲液。
5.根据权利要求1~4任一项所述的罗库溴铵制剂,其是注射制剂。
6.根据权利要求5所述的罗库溴铵制剂,其不引起或引起较少的注射痛和血管刺激。
7.根据权利要求1~6任一项所述的罗库溴铵制剂,其能在室温下储存。
8.一种用于增加或改进罗库溴铵制剂的稳定性的方法,所述方法包括将含有罗库溴铵和缓冲液的液体形式的罗库溴铵制剂的pH调节到2.8~3.2,以使得在40℃下储存3个月后罗库溴铵相关物质C的生成率是1.5%以下且在40℃下储存6个月后罗库溴铵相关物质C的生成率是3%以下,所述缓冲液的浓度为0.015~0.8M,所述缓冲液为仅由甘氨酸缓冲液构成的缓冲液,所述罗库溴铵制剂不冷藏储存。
9.一种方法,其用于防止或减少由罗库溴铵注射制剂引起的注射痛和血管刺激两者并用于增加或改进所述罗库溴铵注射制剂的稳定性,以使得在40℃下储存3个月后罗库溴铵相关物质C的生成率是1.5%以下且在40℃下储存6个月后罗库溴铵相关物质C的生成率是3%以下,所述方法包括将含有罗库溴铵和缓冲液的液体形式的罗库溴铵注射制剂的pH调节到2.8~3.2,所述缓冲液的浓度为0.015~0.8M,所述缓冲液为仅由甘氨酸缓冲液构成的缓冲液,所述罗库溴铵注射制剂不冷藏储存。
10.根据权利要求8或9所述的方法,其中制备所述制剂以使其能在室温下储存。
CN202110628966.XA 2014-06-26 2014-06-26 具有改进的稳定性的罗库溴铵制剂 Pending CN113350274A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110628966.XA CN113350274A (zh) 2014-06-26 2014-06-26 具有改进的稳定性的罗库溴铵制剂

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2014/067023 WO2015198456A1 (ja) 2014-06-26 2014-06-26 安定性を改善したロクロニウム製剤
CN201480076036.6A CN107073007A (zh) 2014-06-26 2014-06-26 具有改进的稳定性的罗库溴铵制剂
CN202110628966.XA CN113350274A (zh) 2014-06-26 2014-06-26 具有改进的稳定性的罗库溴铵制剂

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480076036.6A Division CN107073007A (zh) 2014-06-26 2014-06-26 具有改进的稳定性的罗库溴铵制剂

Publications (1)

Publication Number Publication Date
CN113350274A true CN113350274A (zh) 2021-09-07

Family

ID=52822289

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202110628966.XA Pending CN113350274A (zh) 2014-06-26 2014-06-26 具有改进的稳定性的罗库溴铵制剂
CN201480076036.6A Pending CN107073007A (zh) 2014-06-26 2014-06-26 具有改进的稳定性的罗库溴铵制剂

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201480076036.6A Pending CN107073007A (zh) 2014-06-26 2014-06-26 具有改进的稳定性的罗库溴铵制剂

Country Status (15)

Country Link
US (1) US10869876B2 (zh)
EP (1) EP3162370A4 (zh)
JP (1) JP5684954B1 (zh)
KR (1) KR101692884B1 (zh)
CN (2) CN113350274A (zh)
AU (1) AU2014398349B2 (zh)
BR (1) BR112016026042B1 (zh)
CA (1) CA2950873C (zh)
IL (1) IL249217B (zh)
MX (1) MX2016016148A (zh)
NZ (1) NZ725625A (zh)
PH (1) PH12016502418A1 (zh)
RU (1) RU2705996C2 (zh)
SG (1) SG11201609790SA (zh)
WO (1) WO2015198456A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114404363A (zh) * 2022-02-17 2022-04-29 杭州泓友医药科技有限公司 一种罗库溴铵注射液制剂及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106950314A (zh) * 2017-04-17 2017-07-14 南京健友生化制药股份有限公司 一种检测罗库溴铵或其注射液中烯丙基溴含量的方法
CN108670949A (zh) * 2018-06-21 2018-10-19 上药东英(江苏)药业有限公司 一种低杂质水平的罗库溴铵注射液的制备方法
CN108676052B (zh) * 2018-08-16 2020-05-22 北京市新里程医药科技有限公司 一种罗库溴铵的制备方法及其药物组合物
CN111374942B (zh) * 2018-12-30 2022-09-13 鲁南制药集团股份有限公司 一种甾体类肌松药注射液及其制备方法
US20230014293A1 (en) * 2021-07-02 2023-01-19 Fresenius Kabi Austria Gmbh Aqueous, room-temperature stable rocuronium composition

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060058275A1 (en) * 2004-07-15 2006-03-16 Oded Friedman Processes for preparing stabilized, highly pure rocuronium bromide
CN1864667A (zh) * 2006-06-02 2006-11-22 重庆医药工业研究院有限责任公司 一种稳定的罗库溴铵冻干制剂及其制备方法
WO2008065142A1 (en) * 2006-11-29 2008-06-05 N.V. Organon Stabilized solution of rocuronium comprising a sulfoalkyl-ether-beta-cyclodextrin derivative
CN102949339A (zh) * 2012-11-28 2013-03-06 天津红日药业股份有限公司 一种含有罗库溴铵的注射剂
CN103462885A (zh) * 2013-09-11 2013-12-25 河北凯盛医药科技有限公司 一种稳定的罗库溴铵注射液制剂及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI242015B (en) 1999-11-29 2005-10-21 Akzo Nobel Nv 6-mercapto-cyclodextrin derivatives: reversal agents for drug-induced neuromuscular block
MXPA05009135A (es) 2003-02-28 2005-10-20 Ares Trading Sa Formulaciones liquidas de las proteinas de union del factor necrosis del tumor.
JP2009535126A (ja) * 2006-04-27 2009-10-01 バーンズ−ジューイッシュ ホスピタル 標的組織の検出とイメージング
US8629172B2 (en) 2008-04-18 2014-01-14 Warsaw Orthopedic, Inc. Methods and compositions for treating post-operative pain comprising clonidine
CN101843593B (zh) 2009-03-27 2011-12-21 西安力邦制药有限公司 一种维库溴铵冻干制剂及其制备方法
US8623839B2 (en) * 2011-06-30 2014-01-07 Depuy Mitek, Llc Compositions and methods for stabilized polysaccharide formulations
EP2712611A1 (en) 2012-09-27 2014-04-02 B. Braun Melsungen AG Stabilized aqueous compositions of neuromuscular blocking agents
AU2014285324B2 (en) 2013-07-01 2019-05-23 Maruishi Pharmaceutical Co., Ltd. Rocuronium preparation causing less pain, method for producing the same, and method for reducting and/or alleviating vascular pain to be induced using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060058275A1 (en) * 2004-07-15 2006-03-16 Oded Friedman Processes for preparing stabilized, highly pure rocuronium bromide
CN1864667A (zh) * 2006-06-02 2006-11-22 重庆医药工业研究院有限责任公司 一种稳定的罗库溴铵冻干制剂及其制备方法
WO2008065142A1 (en) * 2006-11-29 2008-06-05 N.V. Organon Stabilized solution of rocuronium comprising a sulfoalkyl-ether-beta-cyclodextrin derivative
CN102949339A (zh) * 2012-11-28 2013-03-06 天津红日药业股份有限公司 一种含有罗库溴铵的注射剂
CN103462885A (zh) * 2013-09-11 2013-12-25 河北凯盛医药科技有限公司 一种稳定的罗库溴铵注射液制剂及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
郑铁松、龚院生主编: "《粮食与食品生化实验指导》", 31 August 1996, 河南医科大学出版社 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114404363A (zh) * 2022-02-17 2022-04-29 杭州泓友医药科技有限公司 一种罗库溴铵注射液制剂及其制备方法

Also Published As

Publication number Publication date
SG11201609790SA (en) 2017-01-27
RU2017102325A (ru) 2018-07-31
US10869876B2 (en) 2020-12-22
RU2705996C2 (ru) 2019-11-13
CA2950873A1 (en) 2015-12-30
BR112016026042B1 (pt) 2022-11-16
EP3162370A1 (en) 2017-05-03
KR20160086953A (ko) 2016-07-20
EP3162370A4 (en) 2017-11-15
NZ725625A (en) 2018-10-26
BR112016026042A2 (zh) 2017-08-15
CA2950873C (en) 2022-08-23
MX2016016148A (es) 2017-04-25
US20170128463A1 (en) 2017-05-11
JP5684954B1 (ja) 2015-03-18
BR112016026042A8 (pt) 2021-07-20
KR101692884B1 (ko) 2017-01-04
CN107073007A (zh) 2017-08-18
RU2017102325A3 (zh) 2018-07-31
JPWO2015198456A1 (ja) 2017-04-20
IL249217B (en) 2021-10-31
AU2014398349B2 (en) 2020-08-06
WO2015198456A1 (ja) 2015-12-30
PH12016502418A1 (en) 2017-03-06
AU2014398349A1 (en) 2016-12-01
IL249217A0 (en) 2017-02-28

Similar Documents

Publication Publication Date Title
US10869876B2 (en) Rocuronium preparation with improved stability
JP6313420B2 (ja) 持続する局所麻酔のためのネオサキシトキシン併用製剤
US20200093899A1 (en) Hunter syndrome therapeutic agent and treatment method
KR101803857B1 (ko) 혈관통을 개선한 로쿠로늄 제제 및 그 제조 방법
KR20100112632A (ko) 수용성인 프로포폴 전구약물의 약제학적 수성 제제
RU2724900C1 (ru) Препарат рокурония с улучшенной стабильностью
WO2015132985A1 (ja) セボフルラン含有エマルション組成物
TW202114716A (zh) 含有對硼苯基丙胺酸之注射液劑之防止析出方法
JP2022085199A (ja) ロクロニウム製剤
EP4268825A1 (en) Pharmaceutical composition for transdermal administration containing epinastine or salt thereof and containing sulfur-based antioxidant

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination