CN113127377A - Wear leveling method for writing and erasing of nonvolatile memory device - Google Patents
Wear leveling method for writing and erasing of nonvolatile memory device Download PDFInfo
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- CN113127377A CN113127377A CN202110375640.0A CN202110375640A CN113127377A CN 113127377 A CN113127377 A CN 113127377A CN 202110375640 A CN202110375640 A CN 202110375640A CN 113127377 A CN113127377 A CN 113127377A
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- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
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- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G06F2212/7211—Wear leveling
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Abstract
The invention provides a wear leveling method for writing and erasing of a nonvolatile memory device, which guarantees the real-time performance of reading and writing by partitioning a storage interval, solves the wear leveling problem of the nonvolatile memory device by circularly and uniformly reading and writing, and realizes the function of prolonging the actual effective service life of the nonvolatile memory device. The invention adaptively adjusts the capacity and the block granularity of the required storage interval according to the size of read-write data, and balances the indexes of read-write efficiency, resource loss and device life cycle. The invention does not need to mount a file system and is not limited by the type of the operating system and the type of the CPU.
Description
Technical Field
The invention belongs to the technical field of storage devices, and particularly relates to a wear leveling method for writing and erasing of a nonvolatile storage device.
Background
For data reading and writing of the nonvolatile memory device, the physical characteristic that the writing/erasing times of each block unit in the nonvolatile memory device are limited needs to be considered, and after the writing/erasing times of a single block unit in the nonvolatile memory device reach an upper limit, some bits of the single block unit in the device may cause errors of newly written data due to unclean erasing. It is desirable to average the write/erase operations on each block by a wear-leveling (wear-leveling) method, thereby improving the overall life cycle of the nonvolatile memory device.
The wear leveling problem of the nonvolatile memory device can be solved by mounting the file system, however, the file system has no unified standard, various file systems exist simultaneously, and the real-time performance of reading and writing files is also influenced by various factors such as the size of the files and a wear leveling algorithm. And the file system is too redundant, which causes the loss of system resources such as memory, CPU and the like, and is not suitable for the scene of ultra-low power consumption.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a wear leveling method for write and erase of a nonvolatile memory device is provided to extend the actual useful life of the nonvolatile memory device.
The technical scheme adopted by the invention for solving the technical problems is as follows: a wear leveling method for writing and erasing of a nonvolatile memory device includes the steps of:
s1: calculating the size of a required interval block according to the time interval of reading and writing data, the length of the data and the service life requirement of the nonvolatile memory device, and dividing the nonvolatile memory device into a plurality of interval blocks; setting a read pointer readPointer and a write pointer writePointer to be used for pointing to the address of the nonvolatile memory device which is reading and writing, and maintaining the read pointer readPointer and the write pointer writePointer in the volatile memory device;
s2: dividing the interval block into a plurality of sectors according to the real-time requirement of reading and writing the nonvolatile memory device and the actual reading and writing speed, and numbering the m-th Sector as Sector m; setting a Sector pointer SectorPointer for pointing to the address of a Sector which is being read and written, and storing the serial number SectorNum of the Sector m which is being read and written in a nonvolatile memory device;
s3: reading and writing data in the nonvolatile memory device, adding 1 to a Sector pointer sectorpointerer to point to a next Sector until all sectors are read and written after one Sector is read and written, and storing the Sector pointer sectorpointerer into the nonvolatile memory device; and then the Sector pointer SectorPointer points to the first Sector, and the step is executed circularly.
According to the scheme, in the step S1, the specific steps are as follows: let the maximum available erase count of the nonvolatile memory device be num and the write data period be TdataSecond, if the service life is y years, the required data length Space data of the interval block is:
further, in step S2, the specific steps include: setting the read-write speed of the nonvolatile memory device as r bytes/s, wherein the read-write time is less than or equal to time seconds; let the number of sector be m, the size of every sector be sector size, then:
according to the scheme, in the step S3, the specific steps are as follows: the data length of each read/write nonvolatile memory device is len bytes, and the period of saving the Sector pointer SectorPointer is TsectorIf the size of the storage Space of the nonvolatile memory device for storing the Sector pointer SectorPointer is Space Sector, then:
Tsector＝sector size*Tdata/len
according to the scheme, the specific steps of writing the nonvolatile memory device are as follows: firstly, judging whether the nonvolatile memory device is operated for the first time after power-on initialization, if so, calculating a sector of a write pointer writePointer through a value of the sector stored in the nonvolatile memory device, and finding out the position of the write pointer writePointer for the sector by a method of reading data from back to front; in the normal operation process, a write pointer writePointer is maintained in a memory, and data to be stored is written in each time according to the size of a minimum read-write unit page of the nonvolatile memory device; if the located sector is full, starting a new sector, storing a new sectorNum, and erasing the previous sector; if writing to the end of the span block, the write pointer, writePointer, is returned to the initial position.
According to the scheme, the specific steps of reading the nonvolatile memory device are as follows: firstly, judging whether the non-volatile memory device is restarted for the first operation, if so, calculating a sector where a write pointer writePointer is located by storing the value of the sector, judging the position of the write pointer writePointer from back to front for the located sector, knowing the position of data written to the non-volatile memory device through the write pointer writePointer, obtaining an initial value of a read pointer, and reading the data at the address; during normal operation, the readPointer points to the write pointer, writePointer.
According to the scheme, the specific steps of erasing the nonvolatile memory device are as follows: the erasing task is a low-priority task which is driven by a semaphore in a data writing interface and runs independently in a background; the writing data is the cyclic writing operation of the sector, and the previous sector completing the writing operation is erased to ensure the balance of erasing actions; and judging whether the previous sector is erased or not by reading out the stored sector during power-on, and if not, erasing again.
According to the scheme, the method for writing the sectorNum comprises the following specific steps: firstly, judging whether the first write operation nonvolatile memory device is restarted or not, if the first write operation nonvolatile memory device is restarted, judging the position of a write pointer from back to front of the whole interval block to find the initial value of the Sector pointer SectorPointer; in the normal operation process, writing the sectorNum to be stored according to the size of the minimum read-write unit page of the nonvolatile memory device, and simultaneously maintaining a Sector pointer sectorPointer in a memory; if the interval block is full, setting a Sector pointer SectorPointer as the initial address of the interval block; and judging whether the Sector pointer SectorPointer is an integral multiple of the minimum erasing unit block of the nonvolatile memory device or not in the operation process, and if so, erasing the previous minimum erasing unit block.
According to the scheme, the specific steps for reading the sectorNum are as follows: for the whole section block, the position of the write pointer writePointer is judged from back to front, the position of data written into the nonvolatile memory device is known through the write pointer writePointer, the initial value of the readPointer is obtained, and the data at the address is read.
A computer storage medium having stored therein a computer program executable by a computer processor, the computer program performing a wear leveling method for write and erase of a non-volatile memory device.
The invention has the beneficial effects that:
1. according to the wear leveling method for the writing and erasing of the nonvolatile memory device, the real-time performance of reading and writing is guaranteed by partitioning the storage region, the wear leveling problem of the nonvolatile memory device is solved by circularly and uniformly reading and writing, and the function of prolonging the actual effective service life of the nonvolatile memory device is realized.
2. The invention adaptively adjusts the capacity and the block granularity of the required storage interval according to the size of read-write data, and balances the indexes of read-write efficiency, resource loss and device life cycle.
3. The invention does not need to mount a file system and is not limited by the type of the operating system and the type of the CPU.
Drawings
FIG. 1 is a diagram illustrating the hardware space partitioning and address jumping of a nonvolatile memory device according to an embodiment of the present invention.
FIG. 2 is a flow chart of writing to a non-volatile memory device of an embodiment of the present invention.
FIG. 3 is a flow chart of reading a non-volatile memory device of an embodiment of the present invention.
FIG. 4 is a flow chart of erasing a nonvolatile memory device according to an embodiment of the present invention.
Fig. 5 is a flow chart of a write sectorNum according to an embodiment of the present invention.
Fig. 6 is a flow chart of reading a sectorNum according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, a wear leveling method for write and erase of a nonvolatile memory device according to an embodiment of the present invention solves hardware problems including the nonvolatile memory device, partition of a sector, and adaptive generation and selection of parameters, solves real-time performance of read and write by means of partitioning the nonvolatile memory device, solves the wear leveling problem by means of cyclic uniform write and erase, and adaptively calculates a total size of a storage interval of the nonvolatile memory device and a granularity of a partition, which are required by the wear leveling method for storing data of a specific data amount.
According to the time interval and the data length of reading and writing the nonvolatile memory device, the space size of the nonvolatile memory device required for storing data for a certain time is calculated, and the space size is called a nonvolatile memory device interval block for short. The nonvolatile memory device interval block is provided with read-write pointers, and the read-write pointers respectively point to addresses of the nonvolatile memory devices which are being read and written. The nonvolatile memory device interval blocks are divided into smaller nonvolatile memory device sectors according to the real-time requirement of the system. The size of each sector is sector size, and m sectors are used. For each sector number, the sector num of the sector that is performing the write operation is stored in the nonvolatile memory device, and the read and write pointers are maintained in the volatile memory device.
The maximum available erase times num and the read-write rate r bytes/s of the nonvolatile memory device are known. The data length of each read-write is len bytes, and the data writing period is TdataSecond, the flash age is y years. The real-time property requires that the read-write time cannot be more than time seconds.
The required storage Space for Space bytes satisfies the following relationship:
sector size＝r*time
m＝Spacedata/sector size
saving period T of sector pointersectorThe following relationship is satisfied:
Tsector＝sector size*Tdata/len
a diagram illustrating hardware space division and address jump in the nonvolatile memory device according to the calculation result is shown in fig. 1.
The read-write and erase principles of the nonvolatile memory device are as follows:
referring to fig. 2, the write data principle is: and dividing the nonvolatile memory device interval block into m sectors according to the read-write real-time requirement. And adding 1 to the Sector pointer when the last Sector is written, pointing the Sector pointer to the first Sector and recording the Sector pointer in the flash.
Firstly, judging whether the non-volatile memory device is restarted for the first operation, if so, calculating a sector where a write pointer is located according to the value of the sector stored in the non-volatile memory device, and finding out the position of the writePoint for the sector where the write pointer is located by a method of reading data from back to front. The writePoint is maintained in the memory during normal operation, and data to be stored is written in the size of the minimum read-write unit page of the nonvolatile memory device each time. If the located sector is full, the new sector is enabled and the new sector num is stored, and simultaneously the erase task (erasing the previous sector) is started. If the write is to the end of the allocated non-volatile storage section block, the write pointer is returned to the initial position.
Referring to fig. 3, the read data principle is: firstly, judging whether the nonvolatile memory device is restarted for the first time operation, if the nonvolatile memory device is read for the first time operation, calculating a sector where a write pointer is located by storing a value of the sector, judging the position of the write pointer from back to front for the located sector, knowing the position of data written in the nonvolatile memory device through the write pointer, namely a readPointer initial value, and reading the data of the address. During normal operation, the read pointer points to the write pointer, i.e. readPointer ═ writePointer.
Referring to fig. 4, the principle of erasing data is: the erasing task is a low priority task which runs in the background independently and is driven to run by a semaphore in a data writing interface. Because the cyclic write operation of the sector is ensured during the data writing, the erasing only needs to erase the last sector which completes the write operation, and the balance of the erasing action can be ensured. In order to avoid the abnormality caused by abnormal power failure, whether the previous sector is erased or not is judged by reading out the stored sector during power-on, and if not, the previous sector is erased again.
The principle of reading and writing secctornum is as follows:
referring to fig. 5, the principle of writing sectorNum is: firstly, judging whether the nonvolatile memory device is restarted for the first write operation, and if the nonvolatile memory device is restarted for the first write operation, judging the position of a write pointer from back to front of the whole interval block. I.e. find the initial value of SectorPointer. And in the normal operation process, writing the sectorNum to be stored according to the size of the minimum read-write unit page of the nonvolatile memory device, and maintaining the SectorPointer in the memory. If the extent block is full, SectorPointer is set to the nonvolatile memory device extent block start address. And judging whether the SectorPointer is an integral multiple of the minimum erasing unit block of the nonvolatile memory device in the operation process, and erasing the previous minimum erasing unit block if the SectorPointer is the integral multiple.
Referring to fig. 6, the principle of reading sectorNum is: and judging the position of the write pointer from back to front for the whole nonvolatile memory device interval block, knowing the position of the nonvolatile memory device where the data is written by the write pointer, and reading the data at the address.
The above embodiments are only used for illustrating the design idea and features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the content of the present invention and implement the present invention accordingly, and the protection scope of the present invention is not limited to the above embodiments. Therefore, all equivalent changes and modifications made in accordance with the principles and concepts disclosed herein are intended to be included within the scope of the present invention.
Claims (10)
1. A wear leveling method for writing and erasing of a nonvolatile memory device is characterized by comprising the following steps: the method comprises the following steps:
s1: calculating the size of a required interval block according to the time interval of reading and writing data, the length of the data and the service life requirement of the nonvolatile memory device, and dividing the nonvolatile memory device into a plurality of interval blocks;
setting a read pointer readPointer and a write pointer writePointer to be used for pointing to the address of the nonvolatile memory device which is reading and writing, and maintaining the read pointer readPointer and the write pointer writePointer in the volatile memory device;
s2: dividing the interval block into a plurality of sectors according to the real-time requirement of reading and writing the nonvolatile memory device and the actual reading and writing speed, and numbering the m-th Sector as Sector m;
setting a Sector pointer SectorPointer for pointing to the address of a Sector which is being read and written, and storing the serial number SectorNum of the Sector m which is being read and written in a nonvolatile memory device;
s3: reading and writing data in the nonvolatile memory device, adding 1 to a Sector pointer sectorpointerer to point to a next Sector until all sectors are read and written after one Sector is read and written, and storing the Sector pointer sectorpointerer into the nonvolatile memory device; and then the Sector pointer SectorPointer points to the first Sector, and the step is executed circularly.
2. The wear leveling method of writing and erasing of a nonvolatile memory device according to claim 1, wherein: in the step S1, the specific steps are as follows: let the maximum available erase count of the nonvolatile memory device be num and the write data period be TdataSecond, if the service life is y years, the required data length Space data of the interval block is:
3. the wear leveling method of writing and erasing of a nonvolatile memory device according to claim 2, wherein: in the step S2, the specific steps are as follows: setting the read-write speed of the nonvolatile memory device as r bytes/s, wherein the read-write time is less than or equal to time seconds; let the number of sector be m, the size of every sector be sector size, then:
4. the wear leveling method of writing and erasing of a nonvolatile memory device according to claim 1, wherein: in the step S3, the specific steps are as follows: the data length of each read/write nonvolatile memory device is len bytes, and the period of saving the Sector pointer SectorPointer is TsectorIf the size of the storage Space of the nonvolatile memory device for storing the Sector pointer SectorPointer is Space Sector, then:
Tsector＝sector size*Tdata/len
5. the wear leveling method of writing and erasing of a nonvolatile memory device according to claim 1, wherein: the specific steps for writing the nonvolatile memory device are as follows:
firstly, judging whether the nonvolatile memory device is operated for the first time after power-on initialization, if so, calculating a sector of a write pointer writePointer through a value of the sector stored in the nonvolatile memory device, and finding out the position of the write pointer writePointer for the sector by a method of reading data from back to front;
in the normal operation process, a write pointer writePointer is maintained in a memory, and data to be stored is written in each time according to the size of a minimum read-write unit page of the nonvolatile memory device;
if the located sector is full, starting a new sector, storing a new sectorNum, and erasing the previous sector; if writing to the end of the span block, the write pointer, writePointer, is returned to the initial position.
6. The wear leveling method of writing and erasing of a nonvolatile memory device according to claim 1, wherein: the specific steps for reading the nonvolatile memory device are as follows:
firstly, judging whether the non-volatile memory device is restarted for the first operation, if so, calculating a sector where a write pointer writePointer is located by storing the value of the sector, judging the position of the write pointer writePointer from back to front for the located sector, knowing the position of data written to the non-volatile memory device through the write pointer writePointer, obtaining an initial value of a read pointer, and reading the data at the address;
during normal operation, the readPointer points to the write pointer, writePointer.
7. The wear leveling method of writing and erasing of a nonvolatile memory device according to claim 1, wherein: the specific steps for erasing a nonvolatile memory device are:
the erasing task is a low-priority task which is driven by a semaphore in a data writing interface and runs independently in a background; the writing data is the cyclic writing operation of the sector, and the previous sector completing the writing operation is erased to ensure the balance of erasing actions;
and judging whether the previous sector is erased or not by reading out the stored sector during power-on, and if not, erasing again.
8. The wear leveling method of writing and erasing of a nonvolatile memory device according to claim 1, wherein: the specific steps for writing a sectorNum are as follows:
firstly, judging whether the first write operation nonvolatile memory device is restarted or not, if the first write operation nonvolatile memory device is restarted, judging the position of a write pointer from back to front of the whole interval block to find the initial value of the Sector pointer SectorPointer;
in the normal operation process, writing the sectorNum to be stored according to the size of the minimum read-write unit page of the nonvolatile memory device, and simultaneously maintaining a Sector pointer sectorPointer in a memory;
if the interval block is full, setting a Sector pointer SectorPointer as the initial address of the interval block;
and judging whether the Sector pointer SectorPointer is an integral multiple of the minimum erasing unit block of the nonvolatile memory device or not in the operation process, and if so, erasing the previous minimum erasing unit block.
9. The wear leveling method of writing and erasing of a nonvolatile memory device according to claim 1, wherein: the specific steps for reading the sectorNum are as follows:
for the whole section block, the position of the write pointer writePointer is judged from back to front, the position of data written into the nonvolatile memory device is known through the write pointer writePointer, the initial value of the readPointer is obtained, and the data at the address is read.
10. A computer storage medium, characterized in that: stored with a computer program executable by a computer processor, the computer program performing a wear leveling method of write-erase of a non-volatile memory device according to any one of claims 1 to 9.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956473A (en) * | 1996-11-25 | 1999-09-21 | Macronix International Co., Ltd. | Method and system for managing a flash memory mass storage system |
| CN1832041A (en) * | 2002-03-20 | 2006-09-13 | 株式会社东芝 | Information storage apparatus |
| US20070260811A1 (en) * | 2006-05-08 | 2007-11-08 | Merry David E Jr | Systems and methods for measuring the useful life of solid-state storage devices |
| CN101645044A (en) * | 2005-01-20 | 2010-02-10 | 桑迪士克股份有限公司 | Scheduling of housekeeping operations in flash memory systems |
| US20100191897A1 (en) * | 2009-01-23 | 2010-07-29 | Seagate Technology Llc | System and method for wear leveling in a data storage device |
| US20110238890A1 (en) * | 2010-03-25 | 2011-09-29 | Kabushiki Kaisha Toshiba | Memory controller, memory system, personal computer, and method of controlling memory system |
| CN102567213A (en) * | 2011-11-30 | 2012-07-11 | 华中科技大学 | Writing balancing method of phase change memory |
| CN102819493A (en) * | 2011-11-30 | 2012-12-12 | 凯迈（洛阳）环测有限公司 | Storage and query method based on non-volatile memory chip |
| CN104598388A (en) * | 2015-01-06 | 2015-05-06 | 青岛龙庆达电气有限公司 | Flash-based SOE (Sequence of Event) storing and sending method |
| CN106293532A (en) * | 2016-08-10 | 2017-01-04 | 广东佳禾声学科技有限公司 | A kind of Flash data storage method |
| CN108280029A (en) * | 2018-02-28 | 2018-07-13 | 郑州云海信息技术有限公司 | A kind of data erasing-writing method and system based on Nor Flash chip |
| CN109716281A (en) * | 2016-10-03 | 2019-05-03 | 赛普拉斯半导体公司 | The system for the loss equalization that user for nonvolatile memory can configure, method and apparatus |
| CN111913890A (en) * | 2020-08-13 | 2020-11-10 | 北京万协通信息技术有限公司 | Non-volatile memory random read-write method based on security module |
-
2021
- 2021-04-08 CN CN202110375640.0A patent/CN113127377B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956473A (en) * | 1996-11-25 | 1999-09-21 | Macronix International Co., Ltd. | Method and system for managing a flash memory mass storage system |
| CN1832041A (en) * | 2002-03-20 | 2006-09-13 | 株式会社东芝 | Information storage apparatus |
| CN101645044A (en) * | 2005-01-20 | 2010-02-10 | 桑迪士克股份有限公司 | Scheduling of housekeeping operations in flash memory systems |
| US20070260811A1 (en) * | 2006-05-08 | 2007-11-08 | Merry David E Jr | Systems and methods for measuring the useful life of solid-state storage devices |
| US20100191897A1 (en) * | 2009-01-23 | 2010-07-29 | Seagate Technology Llc | System and method for wear leveling in a data storage device |
| US20110238890A1 (en) * | 2010-03-25 | 2011-09-29 | Kabushiki Kaisha Toshiba | Memory controller, memory system, personal computer, and method of controlling memory system |
| CN102567213A (en) * | 2011-11-30 | 2012-07-11 | 华中科技大学 | Writing balancing method of phase change memory |
| CN102819493A (en) * | 2011-11-30 | 2012-12-12 | 凯迈（洛阳）环测有限公司 | Storage and query method based on non-volatile memory chip |
| CN104598388A (en) * | 2015-01-06 | 2015-05-06 | 青岛龙庆达电气有限公司 | Flash-based SOE (Sequence of Event) storing and sending method |
| CN106293532A (en) * | 2016-08-10 | 2017-01-04 | 广东佳禾声学科技有限公司 | A kind of Flash data storage method |
| CN109716281A (en) * | 2016-10-03 | 2019-05-03 | 赛普拉斯半导体公司 | The system for the loss equalization that user for nonvolatile memory can configure, method and apparatus |
| CN108280029A (en) * | 2018-02-28 | 2018-07-13 | 郑州云海信息技术有限公司 | A kind of data erasing-writing method and system based on Nor Flash chip |
| CN111913890A (en) * | 2020-08-13 | 2020-11-10 | 北京万协通信息技术有限公司 | Non-volatile memory random read-write method based on security module |
Non-Patent Citations (1)
| Title |
|---|
| 张骏等: "一种Flash存储器静态负载平衡策略", 《计算机应用》 * |
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