CN113097097A - Plasma etching device and working method thereof - Google Patents
Plasma etching device and working method thereof Download PDFInfo
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- CN113097097A CN113097097A CN201911339775.0A CN201911339775A CN113097097A CN 113097097 A CN113097097 A CN 113097097A CN 201911339775 A CN201911339775 A CN 201911339775A CN 113097097 A CN113097097 A CN 113097097A
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 83
- 238000001816 cooling Methods 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 34
- 239000012530 fluid Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a plasma etching device and a working method thereof. The plasma etching device comprises a reaction cavity, an upper electrode assembly, a cooling device, a first driving device and a heating device; a base for placing a substrate to be processed is arranged in the reaction cavity; the upper electrode assembly is positioned at the top of the reaction chamber and is opposite to the base. The cooling device is arranged on the upper electrode assembly; the first driving device is connected with the cooling device and used for driving the cooling device to be away from or contact with the upper electrode assembly; the heating device is arranged on the upper electrode assembly and used for heating the upper electrode assembly.
Description
Technical Field
The invention relates to a device in the field of semiconductors, in particular to a plasma etching device and a working method thereof.
Background
In the conventional plasma etching process, a machine reaction chamber (capacitor plate) is required to be in an idle state and an etching process state to be in a constant high temperature state, so that a heating device and a cooling device are required.
The existing cooling device is always in a working state, and a high-power heating device is needed to keep the high temperature of a reaction cavity (a capacitor plate) in an idle state, because the cooling device takes away part of heat.
In the etching process, the temperature of the reaction chamber (capacitor plate) is also raised by the plasma, and in order to keep the reaction chamber at a constant high temperature, the redundant heat needs to be taken away as soon as possible by a cooling device with strong cooling capacity. However, the cooling device of the existing plasma etching device is always in a working state, so that the plasma etching device needs a high-power heating device to keep the temperature in the reaction chamber (capacitor plate) constant when in an idle state.
However, the high power heating apparatus may be limited in design space or heating power, so that the life span of the heater is affected and electric power is wasted.
Disclosure of Invention
The present invention is directed to a plasma etching apparatus and a working method thereof, which are used to solve the problems of the prior art that the lifetime of a heater is affected and electric energy is wasted when a reaction chamber is kept in a constant high temperature state in an idle state.
In order to achieve the above object, a first technical solution of the present invention is to provide a plasma etching apparatus, which includes a reaction chamber, an upper electrode assembly, a cooling device, a first driving device, and a heating device. The reaction chamber is internally provided with a base for placing a substrate to be processed. The upper electrode assembly is positioned at the top of the reaction chamber and is opposite to the base. The cooling device is disposed on the upper electrode assembly. The first driving means is connected to the cooling device for driving the cooling device away from or into contact with the upper electrode assembly. The heating device is arranged on the upper electrode assembly and used for heating the upper electrode assembly.
Optionally, the upper electrode assembly is provided with a thermally conductive sheet facing the surface of the cooling and heating means.
Optionally, the thermally conductive sheet is a flexible graphite sheet
Optionally, a fluid channel is provided within the cooling device, the fluid channel containing a fluid, the fluid being used to cool the upper electrode assembly.
Optionally, the heating device is connected to a second driving device, and the second driving device is used for driving the heating device to move away from or contact the upper electrode assembly.
Optionally, a heating device is disposed on the upper electrode assembly, and the upper electrode assembly is heated or unheated by controlling whether the heating device is energized
Optionally, a grounding gasket is disposed between the reaction chamber and the upper electrode assembly.
Optionally, the grounding pad comprises aluminum.
Optionally, a thermal insulating liner is disposed between the reaction chamber and the upper electrode assembly.
Optionally, the insulating mat comprises polytetrafluoroethylene.
In order to achieve the above object, a second aspect of the present invention provides a method of operating a plasma processing apparatus, comprising: a plasma processing apparatus is provided. When the plasma etching process is carried out in the plasma processing device, the first driving device drives the cooling device to be in contact with the upper electrode assembly and is used for cooling the upper electrode assembly, and the heating device does not heat the upper electrode assembly. When the plasma etching process is not carried out in the plasma processing device, the first driving device drives the cooling device to leave the upper electrode assembly, the upper electrode assembly is not cooled, and the heating device heats the upper electrode assembly.
Optionally, when the heating device is coupled to the second driving device, the method for operating the plasma processing apparatus further comprises the steps of: when a plasma etching process is carried out in the plasma processing device, the first driving device drives the cooling device to be in contact with the upper electrode assembly and used for cooling the upper electrode assembly, and the second driving device drives the heating device to leave the upper electrode assembly without heating the upper electrode assembly. When the plasma etching process is not carried out in the plasma processing device, the first driving device drives the cooling device to leave the upper electrode assembly, the upper electrode assembly is not cooled, and the second driving device drives the heating device to be in contact with the upper electrode assembly and is used for heating the upper electrode assembly.
Optionally, the heating device is disposed on the upper electrode assembly, and when the heating device is controlled to be powered on to heat or not heat the upper electrode assembly, the operating method of the plasma processing apparatus further includes the following steps: when a plasma etching process is carried out in the plasma processing device, the first driving device drives the cooling device to be in contact with the upper electrode assembly and is used for cooling the upper electrode assembly, so that the heating device is powered off, and the upper electrode assembly is not heated; and when the plasma etching process is not carried out in the plasma processing device, the first driving device drives the cooling device to leave the upper electrode assembly, the upper electrode assembly is not cooled, and the heating device is electrified and used for heating the upper electrode assembly.
Compared with the prior art, the plasma etching device and the working method thereof have the advantages that when the plasma etching device is used for carrying out a plasma etching process, the first driving device controls the cooling device to contact the upper electrode assembly, the cooling device can take away redundant heat, and the reaction cavity can be kept in a constant high-temperature state; when the plasma etching device is in an idle state, the first driving device controls the cooling device to leave the upper electrode assembly, so that the cooling device does not cool the upper electrode assembly, the heating device only needs smaller heating power to keep the reaction cavity in a constant high-temperature state, the heating device does not need to be additionally increased, and the effects of prolonging the service life of the heating device and saving electric energy are achieved.
Drawings
FIG. 1 is a schematic view of a plasma etching apparatus according to the present invention;
FIG. 2 is a schematic view of another plasma etching apparatus according to the present invention;
FIG. 3 is a flowchart illustrating the operation of the plasma etching apparatus of the present invention;
FIG. 4 is a schematic diagram of the plasma processing apparatus of FIG. 1 during processing;
fig. 5 is a schematic structural view of the plasma processing apparatus of fig. 1 in an idle state.
Detailed Description
In order to facilitate understanding of the features, contents, and advantages of the present invention and the effects achieved thereby, the present invention will be described in detail with reference to the accompanying drawings in the form of embodiments, wherein the drawings are provided for illustrative purposes and for supporting the specification, and are not necessarily to be construed as being true in scale and precise arrangement after the practice of the present invention, and therefore, the scope of the present invention in practical terms should not be read as limited by the scale and arrangement of the accompanying drawings.
FIG. 1 is a schematic diagram of a plasma etching apparatus 100 according to the present invention; FIG. 2 is a schematic diagram of another plasma etching apparatus 200 according to the present invention.
Referring to fig. 1 and 2, a plasma etching apparatus 100 includes: a reaction chamber 210, wherein the reaction chamber 210 has a susceptor 300 for placing a substrate 400 to be processed; the upper electrode assembly 110 is located at the top of the reaction chamber 210 and is opposite to the susceptor 300; a cooling device 121 is disposed on the upper electrode assembly 110; a first driving device 122 is connected to the cooling device 121 for driving the cooling device 121 to move away from or contact the upper electrode assembly 110; the heating device 131 is disposed on the upper electrode assembly 110, and is used for heating the upper electrode assembly 110.
The upper electrode assembly 110 includes a gas shower head 112, a plurality of gas passages 113, and a gas baffle 114. A gas shower head 112 is disposed on the upper electrode assembly 110 for spraying a reaction gas into the reaction chamber 210. Also included within the upper electrode assembly 110 are a plurality of gas passages 113 that are pneumatically connected between an externally disposed gas supply and the gas showerhead 112. The gas duct 113 is used for delivering a reaction gas into the reaction chamber 210. The gas baffle 114 is disposed on a side of the upper electrode assembly 110 corresponding to the cooling device 121 to improve smooth uniformity of the reaction gas in the reaction chamber 210.
The cooling device 121 is disposed on the upper electrode assembly 110. The first driving means 122 is connected to the cooling device 121 for driving the cooling device 121 to move away from or contact the upper electrode assembly 110. The first driving means 122 may be a pneumatic cylinder for pneumatically controlling the cooling device 121 to move away from or contact the upper electrode assembly 110; the cooling device 121 is further connected to the first driving means 122 by a first connecting rod 123.
The heating device 131 is disposed on the upper electrode assembly 110 for heating the upper electrode assembly 110.
Further, the upper electrode assembly 110 is provided with a heat conductive sheet 111 facing the surfaces of the cooling device 121 and the heating device 131. The heat conductive sheet 111 will be in state selective contact with the cooling means 121 or the heating means 131. The heat conducting sheet 111 has certain strength, higher thermal conductivity and certain compressibility, for example: a flexible graphite sheet. The heat conductive sheet 111 can be used to accelerate heat generation by the conductive heating device 131 and to accelerate heat dissipation from the upper electrode assembly 110.
A fluid channel 1211 is disposed within the cooling device 121, the fluid channel 1211 contains a fluid, which may be a gas or a liquid, and the upper electrode assembly 110 is cooled by the fluid.
In this embodiment, a second driving device 132 is connected to the heating device 131 for driving the heating device 131 to move away from or contact the upper electrode assembly 110. The second driving means 132 may be an air cylinder for pneumatically controlling the heating device 131 to move away from or contact the upper electrode assembly 110. The heating means 131 is further coupled to a second driving device 132 with a second link 133. The heating device 131 may include a heating plate and a heating pipe.
In this embodiment, the heating device 131 is disposed on the upper electrode assembly 110, and the upper electrode assembly 110 is heated or not heated by controlling whether the heating device 131 is powered.
In addition, a grounding pad 213 is disposed between the reaction chamber 210 and the upper electrode assembly 110, and the grounding pad 213 can ensure a circuit path of the upper electrode assembly 110.
The grounding pad 213 is made of aluminum. However, this is merely an example and is not a limitation.
On the other hand, a thermal insulating liner 214 is disposed between the reaction chamber 210 and the upper electrode assembly 110, and the thermal insulating liner 214 can reduce heat exchange between the components of the upper electrode assembly 110 and other parts of the machine.
Among the materials that insulating mat 214 comprises are plastics, such as polytetrafluoroethylene. However, this is merely an example and is not a limitation.
Fig. 3 is a flowchart of the operation of the plasma etching apparatus of the present invention. Referring to fig. 3 of the drawings, a schematic diagram of a display device,
step S31: a plasma processing apparatus is provided.
Step S32: when the plasma etching process is carried out in the plasma processing device, the first driving device drives the cooling device to be in contact with the upper electrode assembly and is used for cooling the upper electrode assembly, and the heating device does not heat the upper electrode assembly.
Step S33: when the plasma etching process is not carried out in the plasma processing device, the first driving device drives the cooling device to leave the upper electrode assembly, the upper electrode assembly is not cooled, and the heating device heats the upper electrode assembly.
In one embodiment, the heating device 131 is connected to the second driving device 132, so that the operation method of the plasma processing apparatus further includes the following steps:
when a plasma etching process is performed in the plasma processing apparatus 100, the first driving device 122 drives the cooling device 121 to contact with the upper electrode assembly 110, so as to cool the upper electrode assembly 110, and the second driving device 132 drives the heating device 131 to leave the upper electrode assembly 110, so as not to heat the upper electrode assembly 110;
when the plasma etching process is not performed in the plasma processing apparatus 100, the first driving device 122 drives the cooling device 121 to leave the upper electrode assembly 110, and the second driving device 132 drives the heating device 131 to contact the upper electrode assembly 110, without cooling the upper electrode assembly 110, so as to heat the upper electrode assembly 110.
In another embodiment, the method of operating the plasma processing apparatus 200 further comprises the steps of:
when a plasma etching process is performed in the plasma processing apparatus 200, the first driving device 122 drives the cooling device 121 to contact with the upper electrode assembly 110, so as to cool the upper electrode assembly 110, and the heating device 131 is powered off and does not heat the upper electrode assembly 110;
when the plasma etching process is not performed in the plasma processing apparatus 200, the first driving device 122 drives the cooling device 121 to leave the upper electrode assembly 110, and does not lower the temperature of the upper electrode assembly 110, and the heating device 131 is energized to heat the upper electrode assembly 110.
When a plasma etching process is performed, the first driving device 122 controls the cooling device 121 to contact the upper electrode assembly 110, and the cooling device 121 can take away redundant heat to enable the reaction chamber to keep a constant high-temperature state; when the plasma etching apparatus 200 is in the idle state, the first driving device 122 controls the cooling device 121 to leave the upper electrode assembly 110, so that the cooling device 121 does not affect the upper electrode assembly 110, the heating device 131 only needs a small heating power to keep the reaction chamber in a constant high-temperature state, the heating device 131 does not need to be additionally increased, and the effects of prolonging the service life of the heating device 131 and saving electric energy are achieved.
Fig. 4 is a schematic structural view of the plasma processing apparatus 100 of fig. 1 during a process. Referring to fig. 4, when the plasma etching apparatus 100 performs the plasma etching process, the first driving device 122 controls the cooling device 121 to contact the upper electrode assembly 110, the heating device 131 does not heat the upper electrode assembly 110, and the cooling device 121 can take away the excessive heat to keep the reaction chamber in a constant high temperature state.
FIG. 5 is a schematic diagram of the plasma processing apparatus of FIG. 1 in an idle state; referring to fig. 5, when the plasma etching apparatus is in an idle state, the first driving apparatus 122 controls the cooling device 121 to leave the upper electrode assembly 110, the cooling device 121 does not cool the upper electrode assembly 110, and the heating device 131 only needs a small heating power to keep the reaction chamber in a constant high temperature state.
In addition, when the plasma etching apparatus is in an etching state, but the rf power is low, and the rf power is difficult to reach the required temperature in the reaction chamber, the heating device is required to heat the upper electrode to reach the required temperature; when the etching process is performed inside the reaction chamber, the heating device is further required to heat the upper electrode to reach a desired temperature. Therefore, when the radio frequency power is low, the heating device heats the upper electrode no matter the etching process is carried out or stopped in the reaction cavity, and meanwhile, the cooling device does not need to cool the upper electrode.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (13)
1. A plasma etching apparatus, comprising:
the reaction chamber is internally provided with a base for placing a substrate to be processed;
the upper electrode assembly is positioned at the top of the reaction cavity and is opposite to the base;
a cooling device disposed on the upper electrode assembly;
the first driving device is connected with the cooling device and used for driving the cooling device to move away from or contact the upper electrode assembly; and
and the heating device is arranged on the upper electrode assembly and used for heating the upper electrode assembly.
2. The plasma etching apparatus as claimed in claim 1, wherein a surface of the upper electrode assembly facing the cooling device and the heating device is provided with a heat conductive sheet.
3. The plasma etching apparatus of claim 2, wherein the thermally conductive sheet is a flexible graphite sheet.
4. The plasma etching apparatus as claimed in claim 1, wherein a fluid passage is provided in said cooling device, said fluid passage containing a fluid with which said upper electrode assembly is cooled.
5. The plasma etching apparatus of claim 1, wherein the heating device is coupled to a second drive means for driving the heating device away from or into contact with the upper electrode assembly.
6. The plasma etching apparatus as claimed in claim 1, wherein the heating device is disposed on the upper electrode assembly, and the upper electrode assembly is heated or not heated by controlling whether the heating device is energized.
7. The plasma etching apparatus of claim 1, wherein a ground liner is disposed between the reaction chamber and the upper electrode assembly.
8. The plasma etching apparatus of claim 7, wherein the ground pad comprises a material comprising aluminum.
9. The plasma etching apparatus of claim 1, wherein a thermal insulating liner is disposed between the reaction chamber and the upper electrode assembly.
10. The plasma etching apparatus of claim 9, wherein the thermal insulating liner comprises plastic.
11. A method of operating a plasma processing apparatus, comprising the steps of:
providing a plasma processing apparatus according to any one of claim 1 to claim 10;
when a plasma etching process is carried out in the plasma processing device, the first driving device drives the cooling device to be in contact with the upper electrode assembly, the upper electrode assembly is cooled, and the heating device does not heat the upper electrode assembly;
when the plasma etching process is not performed in the plasma processing device, the cooling device is driven to leave the upper electrode assembly through the first driving device, and the heating device is used for heating the upper electrode assembly.
12. The method of claim 11, wherein when the heating device is coupled to the second driving means, the method of operating the plasma processing apparatus comprises:
when a plasma etching process is carried out in the plasma processing device, the first driving device drives the cooling device to be in contact with the upper electrode assembly, the upper electrode assembly is cooled, the second driving device drives the heating device to leave the upper electrode assembly, and the upper electrode assembly is not heated; and
when the plasma etching process is not performed in the plasma processing device, the first driving device drives the cooling device to leave the upper electrode assembly, the upper electrode assembly is not cooled, and the second driving device drives the heating device to be in contact with the upper electrode assembly and is used for heating the upper electrode assembly.
13. The method of claim 11, wherein the heating device is disposed on the upper electrode assembly, and the method of operating the plasma processing apparatus comprises, when the heating device is controlled to be powered on to heat or not heat the upper electrode assembly:
when a plasma etching process is carried out in the plasma processing device, the first driving device drives the cooling device to be in contact with the upper electrode assembly, the upper electrode assembly is cooled, the heating device is powered off, and the upper electrode assembly is not heated; and
when the plasma etching process is not performed in the plasma processing device, the first driving device drives the cooling device to leave the upper electrode assembly, the upper electrode assembly is not cooled, the heating device is electrified, and the upper electrode assembly is heated.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911339775.0A CN113097097A (en) | 2019-12-23 | 2019-12-23 | Plasma etching device and working method thereof |
| TW109140828A TWI821614B (en) | 2019-12-23 | 2020-11-20 | Plasma etching device and working method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911339775.0A CN113097097A (en) | 2019-12-23 | 2019-12-23 | Plasma etching device and working method thereof |
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| CN113097097A true CN113097097A (en) | 2021-07-09 |
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| CN201911339775.0A Pending CN113097097A (en) | 2019-12-23 | 2019-12-23 | Plasma etching device and working method thereof |
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| CN (1) | CN113097097A (en) |
| TW (1) | TWI821614B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1806317A (en) * | 2004-06-04 | 2006-07-19 | 东京毅力科创株式会社 | Gas processing apparatus and film-forming apparatus |
| CN102187742A (en) * | 2008-10-17 | 2011-09-14 | 应用材料公司 | Methods and apparatus for rapidly responsive heat control in plasma processing devices |
| CN102738041A (en) * | 2011-03-31 | 2012-10-17 | 东京毅力科创株式会社 | Ceiling electrode plate and substrate processing apparatus |
| JP2013110440A (en) * | 2013-03-11 | 2013-06-06 | Tokyo Electron Ltd | Electrode unit and substrate processing apparatus |
| CN104284749A (en) * | 2012-04-25 | 2015-01-14 | 欧利生电气株式会社 | Soldering apparatus and method for manufacturing soldered product |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100418187C (en) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | Plasma processing device, annular element and plasma processing method |
| JP5224855B2 (en) * | 2008-03-05 | 2013-07-03 | 東京エレクトロン株式会社 | Electrode unit, substrate processing apparatus, and temperature control method for electrode unit |
| KR101320064B1 (en) * | 2012-06-29 | 2013-10-18 | 주식회사 휴템 | Wafer bonder using dual-cooling and wafer bonding method |
| TWI569023B (en) * | 2015-10-16 | 2017-02-01 | Hon Tech Inc | Temperature of the test apparatus and temperature control method of the adapter |
-
2019
- 2019-12-23 CN CN201911339775.0A patent/CN113097097A/en active Pending
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2020
- 2020-11-20 TW TW109140828A patent/TWI821614B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1806317A (en) * | 2004-06-04 | 2006-07-19 | 东京毅力科创株式会社 | Gas processing apparatus and film-forming apparatus |
| CN102187742A (en) * | 2008-10-17 | 2011-09-14 | 应用材料公司 | Methods and apparatus for rapidly responsive heat control in plasma processing devices |
| CN102738041A (en) * | 2011-03-31 | 2012-10-17 | 东京毅力科创株式会社 | Ceiling electrode plate and substrate processing apparatus |
| CN104284749A (en) * | 2012-04-25 | 2015-01-14 | 欧利生电气株式会社 | Soldering apparatus and method for manufacturing soldered product |
| JP2013110440A (en) * | 2013-03-11 | 2013-06-06 | Tokyo Electron Ltd | Electrode unit and substrate processing apparatus |
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| Publication number | Publication date |
|---|---|
| TW202143359A (en) | 2021-11-16 |
| TWI821614B (en) | 2023-11-11 |
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