CN112865736B - SAW filter chip packaging structure, preparation method thereof and electronic equipment - Google Patents
SAW filter chip packaging structure, preparation method thereof and electronic equipment Download PDFInfo
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- CN112865736B CN112865736B CN202110075450.7A CN202110075450A CN112865736B CN 112865736 B CN112865736 B CN 112865736B CN 202110075450 A CN202110075450 A CN 202110075450A CN 112865736 B CN112865736 B CN 112865736B
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- 238000004806 packaging method and process Methods 0.000 title abstract description 29
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 230000017525 heat dissipation Effects 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000003353 gold alloy Substances 0.000 claims description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 98
- 238000010897 surface acoustic wave method Methods 0.000 description 42
- 238000007789 sealing Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The embodiment of the invention provides a SAW filter chip packaging structure, a preparation method thereof and electronic equipment, and relates to the field of chip packaging. According to the SAW filter chip packaging structure, the insulating layer, the metal seed layer and the metal heat dissipation layer are sequentially arranged on one side, far away from the substrate, of the chip, so that the heat dissipation area of the chip can be effectively increased, the heat dissipation efficiency of the chip after packaging is improved, and the SAW filter chip is miniaturized and ultrathin packaging is facilitated.
Description
Technical Field
The invention relates to the technical field of packaging, in particular to a SAW filter chip packaging structure, a preparation method of the SAW filter chip packaging structure and electronic equipment.
Background
Currently, a plurality of SAW (Surface Acoustic Wave ) filter chips are generally provided in many electronic devices having a communication function. With the continuous increase of the power and frequency of the SAW filter chip, more heat is generated inside the SAW filter chip, and the heat needs to be diffused out by more structures and spaces, which is not beneficial to the miniaturization and ultra-thin packaging requirements of the SAW filter chip.
That is, SAW filter chips have a problem that heat dissipation is difficult when realizing miniaturization and ultra-thin packaging.
Disclosure of Invention
The invention aims at providing a SAW filter chip packaging structure, a preparation method of the SAW filter chip packaging structure and electronic equipment, which can effectively improve the heat dissipation efficiency after chip packaging.
Embodiments of the invention may be implemented as follows:
in a first aspect, an embodiment of the present invention provides a SAW filter chip package structure, including:
the substrate is provided with a grounding pin bonding pad;
the chip is flip-chip mounted on the substrate and electrically connected with the substrate, and a cavity layer is formed between the chip and the substrate;
the insulating layer covers the chip, the cavity layer and the substrate, and is provided with holes so that part of the area of the chip and the grounding pin pad are exposed;
the metal seed layer is arranged on one side, away from the substrate, of the insulating layer, and is in contact with the exposed partial area of the chip and is electrically connected with the exposed grounding pin pad;
the metal heat dissipation layer is arranged on one side, away from the insulating layer, of the metal seed layer, and the metal heat dissipation layer, the metal seed layer and the holes of the insulating layer jointly form a heat dissipation structure of the chip.
In an alternative embodiment, the metal heat dissipation layer is electrically connected to the ground lead pad to form a ground structure and a metal seal structure.
In an alternative embodiment, the insulating layer includes at least one of a dry film, a DAF film, an insulating tape, an epoxy film, a phenolic film, a polyimide film, and a liquid crystal polymer film.
In an alternative embodiment, the material of the metal seed layer includes at least one of Cu, au, ag, al, co, ni, ti, W and Ta.
In an alternative embodiment, the material of the metal heat sink layer includes at least one of Cu, au, ag, zn, cd, sb, bi, mn, co, ni and tin-silver alloy.
In an alternative embodiment, the chip is provided with a first pin pad, the substrate is provided with a second pin pad, and the first pin pad and the second pin pad are connected through an interconnection structure so as to realize electrical connection between the chip and the substrate.
In an alternative embodiment, the material of the interconnect structure includes at least one of gold, gold alloy, silver paste, tin paste, and tin silver copper alloy.
In an alternative embodiment, the side of the chip facing the substrate is provided with electrodes, which are located in the cavity layer.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a SAW filter chip package structure, including:
the chip is flip-chip mounted on a substrate and electrically connected with the substrate, and a cavity layer is formed between the chip and the substrate;
preparing an insulating layer covering the chip, the cavity layer and the substrate, and forming holes in the insulating layer so as to expose a part of the chip area and a grounding pin pad of the substrate;
preparing a metal seed layer on one side of the insulating layer, which is away from the substrate, wherein the metal seed layer is contacted with the exposed partial area of the chip and is electrically connected with the exposed grounding pin pad;
preparing a metal heat dissipation layer on one side of the metal seed layer, which is away from the insulating layer, wherein the metal heat dissipation layer, the metal seed layer and the holes of the insulating layer jointly form a heat dissipation structure of the chip.
In a third aspect, the present invention provides an electronic device comprising a SAW filter chip package structure as described in any one of the preceding embodiments or a SAW filter chip package structure prepared by a method of preparing a SAW filter chip package structure as described above.
The beneficial effects of the embodiment of the invention include, for example:
according to the SAW filter chip packaging structure provided by the embodiment of the invention, the insulating layer, the metal seed layer and the metal heat dissipation layer are sequentially arranged on the side, away from the substrate, of the chip, so that the heat dissipation area of the chip can be effectively increased, the heat dissipation efficiency of the chip after packaging is improved, the chip is miniaturized and ultrathin packaging is facilitated, and the defects of the existing chip packaging technology are overcome. Meanwhile, according to the SAW filter chip packaging structure provided by the embodiment of the invention, the substrate pin bonding pad is interconnected with the metal seed layer and the metal heat dissipation layer, so that the grounding effect and the metal sealing effect can be obtained.
Correspondingly, the electronic equipment adopting the SAW filter chip packaging structure also has the characteristics of good heat dissipation effect, good sealing performance and stable and reliable operation.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a SAW filter chip package structure according to a first embodiment of the present invention;
FIG. 2 is a flow chart of a method for manufacturing a SAW filter chip package structure provided in a second embodiment of the present invention;
fig. 3 to fig. 6 are process flow diagrams of a method for manufacturing a SAW filter chip package structure according to a second embodiment of the present invention.
Icon: 100-SAW filter chip packaging structure; 200-chip; 210-a first pin pad; 220-an interconnect structure; 230-electrode; 300-substrate; 310-second pin pads; 320-ground pin pad; 400-an insulating layer; 410-hole; 500-a metal seed layer; 600-metal heat dissipation layer; 700-cavity layer.
Detailed Description
The existing SAW filter chip takes piezoelectric materials as sound conductors, the heat conduction capacity of the piezoelectric materials is limited, more heat can be generated inside the SAW filter chip along with the continuous improvement of the power of the SAW filter chip, and the heat needs to be diffused out by more structures and spaces, so that the miniaturization and ultrathin packaging requirements of the SAW filter chip are not facilitated. Meanwhile, as the frequency of the SAW filter chip increases, the finger width of the interdigital electrode of the SAW filter chip decreases further, and the resistance increases, thereby generating more heat dissipation.
Aiming at the situation, the embodiment of the invention provides the SAW filter chip packaging structure, which can effectively increase the heat dissipation area of the chip by arranging the heat dissipation structure made of metal on the side of the chip, which is away from the substrate, so that the heat dissipation efficiency of the chip after packaging is improved, and the chip packaging structure is beneficial to miniaturization and ultrathin packaging of the SAW filter chip.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
First embodiment:
referring to fig. 1, a SAW filter chip package structure 100 according to an embodiment of the present invention includes a substrate 300, a chip 200, an insulating layer 400, a metal seed layer 500, and a metal heat dissipation layer 600. The substrate 300 is provided with a grounding pin pad 320, the chip 200 is flip-chip mounted on the substrate 300 and electrically connected with the substrate 300, a cavity layer 700 is formed between the chip 200 and the substrate 300, the insulating layer 400 covers the chip 200, the cavity layer 700 and the substrate 300, holes are formed in the insulating layer 400 so that part of the area of the chip 200 and the grounding pin pad 320 are exposed, the metal seed layer 500 is arranged on one side of the insulating layer 400 away from the substrate 300, the metal seed layer 500 is in contact with part of the area of the exposed chip 200 and is electrically connected with the exposed grounding pin pad 320, the metal heat dissipation layer 600 is arranged on one side of the metal seed layer 500 away from the insulating layer 400, and the metal heat dissipation layer 600, the metal seed layer 500 and the holes 410 of the insulating layer 400 jointly form a heat dissipation structure of the chip.
Wherein, the side of the chip 200 facing the substrate 300 is provided with an electrode 230 (including interdigital transducer electrodes and input-output electrodes) and a plurality of first lead pads 210, the plurality of first lead pads 210 being disposed around the electrode 230. The side of the substrate 300 facing the chip 200 is provided with a plurality of second pin pads 310.
The first and second pin pads 210 and 310 are connected by the interconnect structure 220. In this embodiment, the interconnection structure 220 includes a plurality of metal balls, and the plurality of metal balls are connected to the plurality of first lead pads 210 in a one-to-one correspondence manner, and are also connected to the plurality of second lead pads 310 in a one-to-one correspondence manner, so as to achieve physical connection and electrical connection between the chip 200 and the substrate 300. In other embodiments, the interconnect structure 220 may be cylindrical, rectangular, etc.
The electrode 230, the first pin pad 210, and the second pin pad 310 level interconnect structure 220 are all located within the cavity layer 700. The cavity layer 700 is a filtering functional area of the SAW filter chip package structure, and the insulating layer 400 is used for protecting the cavity layer 700 so as to ensure that the filtering function of the SAW filter chip package structure is not affected.
The insulating layer 400 may have a different structure as required, and in this embodiment, the machine protective layer includes at least one of a dry film, a DAF film, an insulating tape, an epoxy film, a phenolic film, a polyimide film, and a liquid crystal polymer film. Such as a dry film, an insulating tape, an epoxy film, or a combination of an epoxy film and a phenolic film.
In order to reduce the influence of the insulating layer 400 on the heat dissipation of the chip 200 as much as possible and increase the heat dissipation area of the chip 200, in this embodiment, a plurality of holes 410 are provided in the area of the insulating layer 400 covering the chip 200. The holes 410 may be provided in various shapes such as a circle, a square, a triangle, etc., according to actual conditions. The metal seed layer 500 and the metal heat sink layer 600 are both partially disposed in the hole 410 and cover a side of the chip 200 facing away from the substrate 300.
The metal heat sink layer 600 is electrically connected to the ground lead pad 320 to form a ground structure and a metal sealing structure.
The metal heat dissipation layer 600 may be made of different metal materials according to circumstances, and in this embodiment, the material of the metal heat dissipation layer 600 includes at least one of Cu, au, ag, zn, cd, sb, bi, mn, co, ni and tin-silver alloy. For example, a combination of Cu, ag, zn, sb, mn, co, ni, cu and Ag, a combination of Zn and Sb, or a combination of Ag, zn and Ni may be used.
In order to facilitate the preparation of the metal heat dissipation layer 600, in this embodiment, the SAW filter chip package structure 100 further includes a metal seed layer 500, where the metal seed layer 500 is disposed between the chip 200 and the metal heat dissipation layer 600 (i.e., the metal seed layer 500 is disposed on a side of the chip 200 facing away from the substrate 300, and the metal heat dissipation layer 600 is disposed on a side of the metal seed layer 500 facing away from the chip 200). The metal seed layer 500 may play a role in transition in the preparation process of the metal heat dissipation layer 600, so as to facilitate the formation of the metal heat dissipation layer 600.
The metal seed layer 500 may be made of different metal materials according to circumstances, and in this embodiment, the material of the metal seed layer 500 includes at least one of Cu, au, ag, al, co, ni, ti, W and Ta. For example, a combination of Cu, al, co, ni, ti, cu and Al, or a combination of Co, ni and Ti may be used.
According to the SAW filter chip packaging structure provided by the embodiment of the invention, the insulating layer, the metal seed layer and the metal heat dissipation layer are sequentially arranged on the side, away from the substrate, of the chip, so that the heat dissipation area of the chip can be effectively increased, the heat dissipation efficiency of the chip after packaging is improved, the chip is miniaturized and ultrathin packaging is facilitated, and the defects of the existing chip packaging technology are overcome.
Second embodiment:
referring to fig. 2, a method for manufacturing a SAW filter chip package structure 100 according to an embodiment of the present invention is used for manufacturing a SAW filter chip package structure according to a first embodiment, and specifically includes the following steps:
step S100: the chip 200 is flip-chip mounted on the substrate 300 and electrically connected to the substrate 300, so that a cavity layer 700 is formed between the chip 200 and the substrate 300, to obtain the device shown in fig. 3. In detail, the interconnection structure 220 is obtained through ball mounting and surface mounting processes to realize connection of the first lead pad 210 of the chip 200 and the second lead pad 310 of the substrate 300. The material of the interconnection structure 220 may be a conductive metal material such as gold, gold alloy, silver paste, tin paste, or tin-silver-copper alloy. In this embodiment, the interconnect structure 220 is made of gold alloy. In other embodiments, the material of the interconnect structure 220 may also be gold, silver paste, tin paste, or tin-silver-copper alloy.
Step S200: an insulating layer covering the chip 200, the cavity layer 700 and the substrate 300 is prepared to obtain the device shown in fig. 4. In detail, an organic film is attached using a vacuum coating process to obtain the insulating layer 400. Then, a plurality of holes 410 are opened in the region of the insulating layer 400 covering the chip 200, so that a part of the region of the chip 200 and the ground pin pad 320 of the substrate 300 are exposed, to obtain the device shown in fig. 5.
Step S300: a metal seed layer 500 is prepared on a side of the insulating layer 400 facing away from the package body to obtain the device shown in fig. 6, and the metal seed layer 500 is in contact with a partial region of the exposed chip 200 while being electrically connected to the exposed ground pin pad 320.
Step S400: a metal heat dissipation layer 600 is prepared on a side of the metal seed layer 500 facing away from the insulating layer 400 to obtain the SAW filter chip package structure 100 shown in fig. 1, and holes of the metal heat dissipation layer, the metal seed layer and the insulating layer together form a heat dissipation structure of the chip to ensure heat dissipation efficiency of the SAW filter chip package structure 100. The metal heat dissipation layer is electrically connected with the ground lead pad 320 to form a ground structure and a metal sealing structure, the ground structure can facilitate the grounding operation of the SAW filter chip package structure 100, and the metal sealing structure can improve the sealing effect of the ground lead pad 320. Wherein, the metal seed layer 500 and the metal heat dissipation layer 600 are both prepared by physical vapor deposition process.
Third embodiment:
an embodiment of the present invention provides an electronic device, which includes the SAW filter chip package structure 100 provided in the foregoing first embodiment, or the SAW filter chip package structure 100 prepared by the foregoing preparation method in the second embodiment, so that the electronic device has a good heat dissipation effect, and is stable and reliable in operation.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. A SAW filter chip package structure, comprising:
the substrate is provided with a grounding pin bonding pad;
the chip is flip-chip mounted on the substrate and electrically connected with the substrate, and a cavity layer is formed between the chip and the substrate;
the insulating layer covers the chip, the cavity layer and the substrate, and is provided with holes so that part of the area of the chip and the grounding pin pad are exposed;
the metal seed layer is arranged on one side, away from the substrate, of the insulating layer, and is in contact with the exposed partial area of the chip and is electrically connected with the exposed grounding pin pad;
the metal heat dissipation layer is arranged on one side, away from the insulating layer, of the metal seed layer, and the metal heat dissipation layer, the metal seed layer and the holes of the insulating layer jointly form a heat dissipation structure of the chip.
2. The SAW filter chip package of claim 1, wherein said metal heat sink layer is electrically connected to said ground pin pad to form a ground structure and a metal seal structure.
3. The SAW filter chip package structure of claim 1, wherein said insulating layer comprises at least one of a dry film, a DAF film, an insulating tape, an epoxy film, a phenolic film, a polyimide film, and a liquid crystal polymer film.
4. The SAW filter chip package structure of claim 1, wherein a material of said metal seed layer comprises at least one of Cu, au, ag, al, co, ni, ti, W and Ta.
5. The SAW filter chip package structure of claim 1, wherein said metal heat sink layer material comprises at least one of Cu, au, ag, zn, cd, sb, bi, mn, co, ni and tin-silver alloy.
6. The SAW filter chip package of any one of claims 1-5, wherein said chip is provided with a first pin pad and said substrate is provided with a second pin pad, said first pin pad and said second pin pad being connected by an interconnect structure to effect electrical connection of said chip and said substrate.
7. The SAW filter chip package structure of claim 6, wherein said interconnect structure material comprises at least one of gold, gold alloy, silver paste, tin paste, and tin silver copper alloy.
8. The SAW filter chip package structure of claim 1, wherein a side of said chip facing said substrate is provided with an electrode, said electrode being located within said cavity layer.
9. A method for manufacturing a SAW filter chip package structure, comprising:
the chip is flip-chip mounted on a substrate and electrically connected with the substrate, and a cavity layer is formed between the chip and the substrate;
preparing an insulating layer covering the chip, the cavity layer and the substrate, and forming holes in the insulating layer so as to expose a part of the chip area and a grounding pin pad of the substrate;
preparing a metal seed layer on one side of the insulating layer, which is away from the substrate, wherein the metal seed layer is contacted with the exposed partial area of the chip and is electrically connected with the exposed grounding pin pad;
preparing a metal heat dissipation layer on one side of the metal seed layer, which is away from the insulating layer, wherein the metal heat dissipation layer, the metal seed layer and the holes of the insulating layer jointly form a heat dissipation structure of the chip.
10. An electronic device comprising the SAW filter chip package structure according to any one of claims 1 to 8 or the SAW filter chip package structure produced by the method for producing the SAW filter chip package structure according to claim 9.
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| CN113612461B (en) * | 2021-07-20 | 2024-02-09 | 北京航天微电科技有限公司 | Chip-level airtight packaging technology of SAW filter |
| CN114421918B (en) * | 2022-03-31 | 2022-06-21 | 深圳新声半导体有限公司 | Bulk acoustic wave filter chip |
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