CN112670324A - Device structure of light-emitting diode display device - Google Patents
Device structure of light-emitting diode display device Download PDFInfo
- Publication number
- CN112670324A CN112670324A CN202011533964.4A CN202011533964A CN112670324A CN 112670324 A CN112670324 A CN 112670324A CN 202011533964 A CN202011533964 A CN 202011533964A CN 112670324 A CN112670324 A CN 112670324A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light emitting
- organic light
- inorganic
- device structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000002346 layers by function Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a display device of inorganic light-emitting diodes and organic light-emitting diodes, which realizes different chromaticities by adjusting light emitted by the inorganic light-emitting diodes and the organic light-emitting diodes. The invention adopts the red organic light emitting diode, and solves the problem that the red inorganic light emitting diode and the blue or green inorganic light emitting diode cannot be integrated on one substrate.
Description
Technical Field
The present invention relates to a device structure of a light emitting diode display apparatus, and more particularly, to a device structure including an inorganic light emitting diode and an organic light emitting diode display apparatus.
Background
Recently, a novel Micro inorganic light emitting diode (Micro-LED) display technology has appeared, green and blue devices of the Micro-LED are made of gallium nitride (GaN) materials, and a red device is made of gallium arsenide (GaAs) materials, so that different material systems bring difficulties to the integration of red, green and blue devices. It has been proposed that the red device is made of gan material, but the efficiency is not high and the color purity is not high.
Disclosure of Invention
The invention provides a light emitting diode display device which comprises an inorganic light emitting diode and an organic light emitting diode.
According to one aspect of the invention, the inorganic light emitting diode emits blue light and the organic light emitting diode emits red light.
According to one aspect of the invention, the inorganic light emitting diode emits blue light and the organic light emitting diode emits green light.
According to an aspect of the present invention, the inorganic light emitting diode shares an electrode with the organic light emitting diode.
According to an aspect of the present invention, the inorganic light emitting diode shares an electrode with the organic light emitting diode, and the P-type electrode of the inorganic light emitting diode is also a P-type electrode of the organic light emitting diode.
According to one aspect of the present invention, the inorganic light emitting diode and the organic light emitting diode are driven by a field effect transistor or a transistor, respectively.
According to an aspect of the present invention, the inorganic light emitting diode and the organic light emitting diode are in a stacked structure.
According to one aspect of the invention, the inorganic light emitting diode is in a parallel side-by-side configuration with the organic light emitting diode.
Further, the inorganic light emitting diode and the organic light emitting diode are opposite to the substrate, one inorganic light emitting diode is at a close position, and two organic light emitting diodes are at a far position.
The two organic light emitting diodes are in a side-by-side arrangement structure relative to the substrate.
The inorganic light emitting diode and the two organic light emitting diodes are in a side-by-side arrangement structure relative to the substrate.
The two organic light emitting diodes are in an up-and-down arrangement structure relative to the substrate.
The invention has the positive effects that:
the red organic light emitting diode is adopted, so that the problem that the red inorganic light emitting diode and the blue or green inorganic light emitting diode cannot be integrated on one substrate is solved.
Drawings
FIG. 1 shows a top-bottom stacked structure of an inorganic light emitting diode and an organic light emitting diode.
Fig. 2 shows a top-bottom stacked structure of an inorganic light emitting diode connected to a driving fet and an organic light emitting diode connected to the driving fet through a via hole.
Detailed Description
The following describes embodiments of the present invention with reference to the drawings.
Example one
FIG. 1 shows a top-bottom stacked structure of a blue inorganic light emitting diode and a red organic light emitting diode. Including a sapphire substrate 10; an unintentional doping layer 11, an N-type semiconductor layer 12, a light emitting semiconductor layer 13, a P-type semiconductor layer 14, an N-type electrode 15 and a P-type electrode 20 of the inorganic light emitting diode (which can also be used as an anode of the organic light emitting diode); organic functional layer 21 of organic light emitting diode, metal cathode 22.
The blue inorganic light emitting diode emits blue light and the red light emitted by the organic light emitting diode are mixed.
Example two
The device structure is shown in fig. 1, and is different from the first embodiment in that: the organic light emitting diode may emit green and red light, so that blue light emitted from the blue inorganic light emitting diode and green and red light emitted from the organic light emitting diode are mixed into white light, and the chromaticity may be adjusted by adjusting the luminance of the inorganic light emitting diode and the organic light emitting diode.
EXAMPLE III
The device structure is shown in fig. 1, and is different from the first embodiment in that: the organic light emitting diode includes two stacked organic light emitting diodes emitting green and red light, respectively, and the chromaticity can be adjusted by adjusting the luminance of the inorganic light emitting diode and the organic light emitting diode.
Example four
FIG. 2 shows a top-bottom stacked structure of an inorganic light emitting diode and an organic light emitting diode. Including a sapphire substrate 10; an unintentional doping layer 11, an N-type semiconductor layer 12, a light emitting semiconductor layer 13, a P-type semiconductor layer 14, an N-type electrode 15 and a P-type electrode 20 of the inorganic light emitting diode (which can also be used as an anode of the organic light emitting diode); an organic functional layer 21 of an organic light emitting diode, a metal cathode 22; the source electrode 15, the drain electrode 31, and the gate electrode 32 of the active drive transistor.
The N electrode 15 of the inorganic light emitting diode is also the source electrode 15 of the active driving transistor, i.e. the inorganic light emitting diode is connected with the active driving transistor, and the brightness is adjusted by the signal of the active driving transistor. The metal cathode 22 of the organic light emitting diode is connected to the drain electrode 31 of another active driving transistor, and the brightness is adjusted by the signal of the active driving transistor. The chromaticity can be adjusted by adjusting the luminance of the inorganic light emitting diode and the organic light emitting diode.
EXAMPLE five
The device structure is shown in fig. 2, and is different from the fourth embodiment in that: the organic light emitting diode comprises two laminated organic light emitting diodes which respectively emit green light and red light and are respectively connected with different active driving field effect tubes, and the chromaticity can be adjusted by adjusting the brightness of the inorganic light emitting diode and the organic light emitting diode.
The foregoing merely represents preferred embodiments of the invention, which are described in some detail and detail, and therefore should not be construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, various changes, modifications and substitutions can be made without departing from the spirit of the present invention, and these are all within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A device structure of a light emitting diode display device is characterized in that: having both inorganic light emitting diodes and organic light emitting diodes.
2. The device structure of a light emitting diode display apparatus according to claim 1, wherein: the inorganic light-emitting diode and the organic light-emitting diode share a conductive electrode.
3. The device structure of the light emitting diode display apparatus according to any one of claims 1 to 2, wherein: the inorganic light emitting diode and the organic light emitting diode are in an up-and-down arrangement structure relative to the substrate.
4. The device structure of the light emitting diode display apparatus according to any one of claims 1 to 2, wherein: the inorganic light emitting diode and the organic light emitting diode are in a side-by-side arrangement structure relative to the substrate.
5. The device structure of the light emitting diode display apparatus according to any one of claims 1 to 2, wherein: the inorganic light emitting diode and the organic light emitting diode are opposite to the substrate, one inorganic light emitting diode is positioned at a near position, and the two organic light emitting diodes are positioned at a far position.
6. The device structure of a light emitting diode display apparatus according to claim 5, wherein: the two organic light emitting diodes are in a side-by-side arrangement structure relative to the substrate.
7. The device structure of a light emitting diode display apparatus according to claim 5, wherein: the inorganic light emitting diode and the two organic light emitting diodes are in a side-by-side arrangement structure relative to the substrate.
8. The device structure of a light emitting diode display apparatus according to claim 5, wherein: the two organic light emitting diodes are in an up-and-down arrangement structure relative to the substrate.
9. The device structure of a light emitting diode display apparatus according to claim 1, wherein: the electrodes of the inorganic light-emitting diode and the organic light-emitting diode are respectively connected with the field effect tube.
10. The device structure of a light emitting diode display apparatus according to claim 9, wherein: the inorganic light-emitting diode and the organic light-emitting diode are respectively connected with a field effect tube, and one layer or a plurality of layers of the field effect tube are made of the same material as the functional layer of the inorganic light-emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011533964.4A CN112670324A (en) | 2020-12-22 | 2020-12-22 | Device structure of light-emitting diode display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011533964.4A CN112670324A (en) | 2020-12-22 | 2020-12-22 | Device structure of light-emitting diode display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112670324A true CN112670324A (en) | 2021-04-16 |
Family
ID=75407865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011533964.4A Pending CN112670324A (en) | 2020-12-22 | 2020-12-22 | Device structure of light-emitting diode display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112670324A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101847646A (en) * | 2010-02-02 | 2010-09-29 | 孙润光 | Inorganic light-emitting diode display device |
| CN102221158A (en) * | 2011-07-14 | 2011-10-19 | 南京第壹有机光电有限公司 | OLED (Organic Light Emitting Diode) and LED compound lamp |
| CN203674210U (en) * | 2014-01-22 | 2014-06-25 | 天津三安光电有限公司 | White light emitting device |
| CN109786429A (en) * | 2019-01-29 | 2019-05-21 | 苏州大学 | A kind of mixed luminescence diode and preparation method thereof |
| CN110896088A (en) * | 2018-09-13 | 2020-03-20 | 上海微电子装备（集团）股份有限公司 | Display panel, display device and display panel manufacturing method |
| CN111133499A (en) * | 2017-04-13 | 2020-05-08 | 香港北大青鸟显示有限公司 | LED-OLED hybrid self-emissive display |
| CN111370543A (en) * | 2020-03-23 | 2020-07-03 | 中国科学院半导体研究所 | Tunable white light three-terminal light-emitting device combining LED and OLED and preparation method thereof |
| CN111785714A (en) * | 2020-07-31 | 2020-10-16 | 晋江市博感电子科技有限公司 | Display device formed by connecting LEDs and OLEDs in parallel in opposite polarities |
-
2020
- 2020-12-22 CN CN202011533964.4A patent/CN112670324A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101847646A (en) * | 2010-02-02 | 2010-09-29 | 孙润光 | Inorganic light-emitting diode display device |
| CN102221158A (en) * | 2011-07-14 | 2011-10-19 | 南京第壹有机光电有限公司 | OLED (Organic Light Emitting Diode) and LED compound lamp |
| CN203674210U (en) * | 2014-01-22 | 2014-06-25 | 天津三安光电有限公司 | White light emitting device |
| CN111133499A (en) * | 2017-04-13 | 2020-05-08 | 香港北大青鸟显示有限公司 | LED-OLED hybrid self-emissive display |
| CN110896088A (en) * | 2018-09-13 | 2020-03-20 | 上海微电子装备（集团）股份有限公司 | Display panel, display device and display panel manufacturing method |
| CN109786429A (en) * | 2019-01-29 | 2019-05-21 | 苏州大学 | A kind of mixed luminescence diode and preparation method thereof |
| CN111370543A (en) * | 2020-03-23 | 2020-07-03 | 中国科学院半导体研究所 | Tunable white light three-terminal light-emitting device combining LED and OLED and preparation method thereof |
| CN111785714A (en) * | 2020-07-31 | 2020-10-16 | 晋江市博感电子科技有限公司 | Display device formed by connecting LEDs and OLEDs in parallel in opposite polarities |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11985856B2 (en) | Display apparatus | |
| US12009385B2 (en) | Light-emitting diode unit for display comprising plurality of pixels and display device having same | |
| CN106876406B (en) | LED full-color display device structure based on III-V nitride semiconductor and preparation method thereof | |
| US11575067B2 (en) | Display substrate, display apparatus, and manufacturing method for display substrate | |
| KR101476207B1 (en) | Display device using semiconductor light emitting device | |
| US9391051B2 (en) | Display device using semiconductor light emitting device and method of fabricating the same | |
| Liu et al. | 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (LEDoS) micro-displays | |
| US10804425B2 (en) | Growth substrate including micro-light emitting diode chips and method of manufacturing light emitting diode display using the same | |
| KR102039838B1 (en) | Micro led display pixel assembly and method for manufacturing the same | |
| KR20230038169A (en) | Micro led display panel and method of manufacturing the same | |
| KR20140083488A (en) | Display device using semiconductor light emitting device | |
| US11043617B2 (en) | LED display device | |
| TWI709254B (en) | Active led module with led and vertical mos transistor formed on same substrate | |
| CN111834420B (en) | Semiconductor mixed full-color triode light-emitting tube display device and manufacturing method | |
| US20230238481A1 (en) | Pixel for rgcb micro-display having vertically stacked sub-pixels | |
| KR20180053864A (en) | Micro led display pixel assembly and method for manufacturing the same | |
| Hartensveld | InGaN color tunable full color passive matrix | |
| CN111785714B (en) | Display device formed by parallel connection of LED and OLED with opposite polarities | |
| CN112670324A (en) | Device structure of light-emitting diode display device | |
| US20230037052A1 (en) | Led display apparatus and manufacturing method of the same | |
| US10497825B2 (en) | Light emitting element and light emitting device including the same | |
| Kovác et al. | Advanced light emitting devices for optoelectronic applications | |
| KR101504155B1 (en) | Nitride semiconductor light emitting device | |
| US11929355B2 (en) | Mixed light light-emitting diode device | |
| US20240063198A1 (en) | Pixel unit and display apparatus applying the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210416 |
|
| RJ01 | Rejection of invention patent application after publication |