CN111599743B - Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure - Google Patents
Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure Download PDFInfo
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- CN111599743B CN111599743B CN202010641738.1A CN202010641738A CN111599743B CN 111599743 B CN111599743 B CN 111599743B CN 202010641738 A CN202010641738 A CN 202010641738A CN 111599743 B CN111599743 B CN 111599743B
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- Prior art keywords
- carrier plate
- adhesive film
- glass carrier
- composite adhesive
- wafer
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- 239000011521 glass Substances 0.000 title claims abstract description 88
- 239000002131 composite material Substances 0.000 title claims abstract description 58
- 239000002313 adhesive film Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 235000012431 wafers Nutrition 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 2
- 238000000576 coating method Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 6
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Abstract
The invention discloses a method for producing a wafer by combining a composite adhesive film with a through hole glass carrier plate structure, which is characterized by comprising the following steps: s1: opening holes on a glass carrier plate, and S2: the method comprises the steps of adhering a composite adhesive film on a glass carrier plate, accurately aligning a wafer to the glass carrier plate by adopting an optical mechanism, placing the front surface of the wafer on the composite adhesive film, and adhering the wafer on the glass carrier plate by adopting a laminating and heating mode, wherein S3: and removing the composite adhesive film in the glass window hole, and thinning the crystal grains. The production method of the wafer is characterized in that the composite adhesive film is combined with the windowed glass carrier plate to replace the traditional adhesive, so that uneven coating and blocking of the window/TGV communication hole by the adhesive are avoided, and the subsequent process is influenced; the glass carrier plate with the through holes and the wafers are bonded together through the composite adhesive film, so that the damage to the wafers caused by windowing after bonding is avoided, the production efficiency is improved, and the production cost is reduced.
Description
Technical Field
The invention relates to a method for producing a wafer, in particular to a method for producing a wafer by combining a composite adhesive film with a through hole glass carrier plate structure.
Background
In order to improve the electronic circuit performance of the electronic element, the heat dissipation capability of the element can be optimized by reducing the thickness of the chip, reducing the conduction resistance, and improving the performance requirement of the electronic circuit of the element on high-frequency switch with large current, and thinned chip grains accord with the packaging thinning trend. The power element can meet the requirements of multi-layer and 3D packaging of the power element. In order to meet the demand of thinner wafers, a round glass carrier plate with a thickness of 400-750 micrometers is firstly adopted to temporarily bond the wafers, and the wafers are conveyed to carry out wafer thickness thinning and back surface metallization processes. In the prior art, bonding between the wafer and the glass is completed by coating an adhesive on the wafer and coating a release layer with UV or a deconstructable layer on the glass carrier, then thinning, yellow light pattern, ion implantation, metal plating and other processes are performed, then the wafer is subjected to unbinding to continue the wafer continuous cutting and packaging processes, but in order to implement the double-sided process, if a windowed glass carrier or a glass carrier with communication holes (TGV) for advanced packaging 2.5D and 3D is adopted, the current process cannot be implemented, because the release layer of the coating method is dissolved in an organic solvent, the release layer must be leaked and even filled into the window or the TGV communication holes during coating, the metal filling process which seriously obstructs the communication of the subsequent through holes is difficult to form, and in the prior art, the windowed glass carrier is subjected to window opening after bonding, thereby causing wafer damage.
Disclosure of Invention
The invention aims to provide a method for producing wafers by combining a composite adhesive film with a through hole glass carrier plate structure, wherein the composite adhesive film and the windowed glass carrier plate are combined together to replace the traditional adhesive, so that uneven coating and blocking of windows/TGV communication holes by the adhesive are avoided, and the subsequent manufacturing process is influenced; the glass carrier plate with the through holes and the wafers are bonded together through the composite adhesive film, so that the damage to the wafers caused by windowing after bonding is avoided, the production efficiency is improved, and the production cost is reduced.
The aim of the invention can be achieved by the following technical scheme:
The method for producing the wafer by combining the composite adhesive film with the through-hole glass carrier plate structure is characterized by comprising the following steps of:
s1: glass carrier plate hole
Glass holes are formed in the glass carrier plate.
S2: bonding wafer on glass carrier
The method comprises the steps of adhering a composite adhesive film on a glass carrier plate, accurately aligning a wafer to the glass carrier plate by adopting an optical mechanism, placing the front surface of the wafer on the composite adhesive film, and adhering the wafer on the glass carrier plate by adopting a laminating and heating mode.
S3: composite adhesive film for removing glass window hole
And thinning the crystal grains, and removing the composite adhesive film in the glass window hole after the back surface element process to expose the front surface of the wafer.
Further, the glass carrier plate is removed after the step S3 is completed, a double-sided process is completed, the thinned wafer is uniformly attached to DICINGFRAME, the adhesive force of the composite adhesive film is reduced after UV irradiation, the viscosity of the composite adhesive film is reduced from 1000-2000gf/25mm to 10-30gf/25mm after irradiation, and the glass carrier plate is removed.
Further, after the glass carrier plate is removed, degumming is carried out in a heating mode, the composite adhesive film is lifted and removed, then the residual adhesive is removed, the residual adhesive is removed by adopting oxygen plasma and an organic solvent, the surface of the wafer is cleaned, and etching of the cutting channel is completed by adopting a plasma process/a laser process.
And furthermore, after the S3 is finished, a connecting process is carried out, glass is an adapter plate, after the glass is communicated with a glass window hole of the TGV, a Bump is formed, and after a wafer is thinned, the glass is connected with other plates through the Bump.
Further, in the step S1, the pattern of windowing/TGV is performed on the glass carrier plate through a yellow light mask pattern process, a laser process or an etching process.
Further, the composite adhesive film comprises a composite layer, a heat treatment layer and a UV illumination layer.
Further, in the step S3, oxygen plasma/laser is used for removing the composite adhesive film in the glass window hole.
The invention has the beneficial effects that:
1. the method for producing the wafer is combined with the windowed glass carrier plate through the composite adhesive film to replace the traditional adhesive, so that uneven coating and blocking of the window/TGV communication hole by the adhesive are avoided, and the subsequent process is influenced;
2. According to the method for producing the wafer, the glass carrier plate with the through holes and the wafer are bonded together through the composite adhesive film, so that the damage of the wafer caused by windowing after bonding is avoided, the production efficiency is improved, and the production cost is reduced.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a film pressing device according to the present invention;
FIG. 2 is a schematic diagram of wafer bonding on a glass carrier in accordance with the present invention;
FIG. 3 is a schematic view of a composite adhesive film according to the present invention;
FIG. 4 is a schematic illustration of a composite adhesive film for removing a glazing hole according to the present invention;
FIG. 5 is a schematic illustration of a wafer attached to a dicing film according to the present invention;
FIG. 6 is a schematic illustration of the removal of a glass carrier plate of the present invention;
FIG. 7 is a schematic diagram of the etching of dicing streets according to the invention;
fig. 8 is a schematic diagram of the connection process of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The method for producing the wafer by combining the composite adhesive film with the through-hole glass carrier plate structure comprises the following steps:
s1: glass carrier plate hole
The glass carrier plate 1 is windowed/TGV (communication holes penetrating the glass carrier plate) by a pattern opening by a yellow light mask pattern process, a laser or an etching process, and a glass window hole 11 is formed on the glass carrier plate 1 as shown in fig. 1.
S2: bonding wafer on glass carrier
The composite adhesive film 3 is adhered to the glass carrier plate 1, an optical mechanism is adopted to enable the wafer 2 to be precisely aligned to the glass carrier plate 1, the front surface of the wafer 2 is placed on the composite adhesive film 3, and the wafer 2 is adhered to the glass carrier plate 1 in a laminating and heating mode, as shown in fig. 2.
The composite adhesive film 3 includes a composite layer 32, a heat treatment layer 31, and a UV light irradiation layer 33.
S3: removing the composite adhesive film 3 in the glazing hole 11
After the die is thinned and the back surface element is processed, the composite adhesive film 3 in the glass window hole 11 is removed by oxygen plasma/laser, so that the front surface of the wafer 2 is exposed, as shown in fig. 4.
S4: removal of glass carrier plate 1
After finishing the double-sided process, uniformly attaching the thinned wafer 2 to DICINGFRAME (cut film frame), reducing the adhesive force of the composite adhesive film 3 after irradiation by UV, reducing the viscosity of the composite adhesive film 3 from 1000-2000gf/25mm to 10-30gf/25mm after irradiation, and removing the glass carrier plate 1, as shown in fig. 5 and 6.
S5: removing glass carrier plate
Degumming is carried out by adopting a heating mode, and the composite adhesive film 3 is lifted and removed.
S6: removing residual glue
The residual glue is removed by oxygen plasma and organic solvent, and the surface of the wafer 2 is cleaned, and etching of the dicing streets is completed by plasma process/laser process, as shown in fig. 7.
Example 2
The method for producing the wafer by combining the composite adhesive film with the through-hole glass carrier plate structure comprises the following steps:
s1: glass carrier plate hole
The glass carrier plate 1 is windowed/TGV (communication holes penetrating the glass carrier plate) by a pattern opening by a yellow light mask pattern process, a laser or an etching process, and a glass window hole 11 is formed on the glass carrier plate 1 as shown in fig. 1.
S2: bonding wafer on glass carrier
The composite adhesive film 3 is adhered to the glass carrier plate 1, an optical mechanism is adopted to enable the wafer 2 to be precisely aligned to the glass carrier plate 1, the front surface of the wafer 2 is placed on the composite adhesive film 3, and the wafer 2 is adhered to the glass carrier plate 1 in a laminating and heating mode, as shown in fig. 2.
The composite adhesive film 3 includes a composite layer 32, a heat treatment layer 31, and a UV light irradiation layer 33.
S3: removing the composite adhesive film 3 in the glazing hole 11
After the die is thinned and the back surface element is processed, the composite adhesive film 3 in the glass window hole 11 is removed by oxygen plasma/laser, so that the front surface of the wafer 2 is exposed, as shown in fig. 4.
S4: connection process
The glass is InterposerGlass (interposer) and the metal is connected to the TGV glazing 11 to form a Bump, and the wafer 2 is thinned and then connected to other board members through the Bump, as shown in fig. 8.
In the description of the present specification, the descriptions of the terms "one embodiment," "example," "specific example," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims.
Claims (4)
1. The method for producing the wafer by combining the composite adhesive film with the through-hole glass carrier plate structure is characterized by comprising the following steps of:
s1: glass carrier plate window opening hole
Forming a glazing hole (11) in a glass carrier plate (1);
S2: bonding wafer on glass carrier
Adhering a composite adhesive film (3) on a glass carrier plate (1), adopting an optical mechanism to lead the wafer (2) to be accurately aligned with the glass carrier plate (1), placing the front surface of the wafer (2) on the composite adhesive film (3), and adhering the wafer (2) on the glass carrier plate (1) in a laminating and heating mode;
S3: removing the composite adhesive film (3) in the glass window hole (11)
Thinning the crystal grains, and removing the composite adhesive film (3) in the glass window hole (11) after the back surface element process to expose the front surface of the wafer (2);
Removing the glass carrier plate (1) after the step S3 is completed, completing a double-sided process, uniformly attaching the thinned wafer (2) on a cutting film frame, reducing the adhesive force of the composite adhesive film (3) after UV irradiation, reducing the viscosity of the composite adhesive film (3) from 1000-2000gf/25mm to 10-30gf/25mm after irradiation, and removing the glass carrier plate (1);
The composite adhesive film (3) comprises a composite layer (32), a heat treatment layer (31) and a UV illumination layer (33);
and in the step S3, the composite adhesive film (3) in the glass window hole (11) is removed by adopting oxygen plasma/laser.
2. The method for producing wafers by combining the composite adhesive film with the through-hole glass carrier plate structure according to claim 1, wherein after the glass carrier plate (1) is removed, degumming is carried out in a heating mode, the composite adhesive film (3) is lifted and removed, then the residual adhesive is removed, the oxygen plasma and the organic solvent are adopted to remove the residual adhesive, the surface of the wafer (2) is cleaned, and etching of cutting channels is completed by adopting a plasma process/laser process.
3. The method for producing wafers by combining the composite adhesive film with the through-hole glass carrier plate structure according to claim 1, wherein the connection process is carried out after the S3 is completed, glass is an adapter plate, the glass window hole (11) of the TGV is communicated with metal, a Bump is formed, and the wafers (2) are connected with other plates through the Bump after being thinned.
4. The method for producing wafers by combining the composite adhesive film with the through-hole glass carrier plate structure according to claim 1, wherein the step S1 is characterized in that the pattern of windowing/TGV is performed on the glass carrier plate (1) through a yellow mask pattern process, a laser or an etching process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010641738.1A CN111599743B (en) | 2020-07-06 | 2020-07-06 | Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010641738.1A CN111599743B (en) | 2020-07-06 | 2020-07-06 | Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure |
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| Publication Number | Publication Date |
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| CN111599743A CN111599743A (en) | 2020-08-28 |
| CN111599743B true CN111599743B (en) | 2024-05-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010641738.1A Active CN111599743B (en) | 2020-07-06 | 2020-07-06 | Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure |
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| CN (1) | CN111599743B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112234016B (en) * | 2020-10-19 | 2023-06-23 | 绍兴同芯成集成电路有限公司 | Manufacturing process of wafer thick film metal layer and PAD metal pattern |
| CN112289734A (en) * | 2020-11-25 | 2021-01-29 | 绍兴同芯成集成电路有限公司 | Process for dissociating glass carrier plate by organic solvent infiltration debonding bonding ultrathin wafer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8305761D0 (en) * | 1983-03-02 | 1983-04-07 | Standard Telephones Cables Ltd | Integrated circuit packaging |
| CN86100204A (en) * | 1985-01-17 | 1986-08-13 | 通用电气公司 | The method for production of having the integrated circuit silicon small pieces compound of hotmelt on the silicon base |
| TWI234211B (en) * | 2003-12-26 | 2005-06-11 | Advanced Semiconductor Eng | Method for forming an underfilling layer on a bumped wafer |
| CN101075580A (en) * | 2007-06-01 | 2007-11-21 | 日月光半导体制造股份有限公司 | Method for cutting crystal wafer |
| CN103597578A (en) * | 2011-05-27 | 2014-02-19 | 康宁股份有限公司 | Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer |
| CN104064509A (en) * | 2014-07-09 | 2014-09-24 | 浙江中纳晶微电子科技有限公司 | Temporary bonding method and separation method of wafers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI229890B (en) * | 2003-04-24 | 2005-03-21 | Sanyo Electric Co | Semiconductor device and method of manufacturing same |
| US10163673B2 (en) * | 2013-10-07 | 2018-12-25 | Globalfoundries Inc. | Dual adhesive bonding with perforated wafer |
| JP2016213283A (en) * | 2015-05-01 | 2016-12-15 | ソニー株式会社 | Manufacturing method and wiring board with through electrode |
-
2020
- 2020-07-06 CN CN202010641738.1A patent/CN111599743B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8305761D0 (en) * | 1983-03-02 | 1983-04-07 | Standard Telephones Cables Ltd | Integrated circuit packaging |
| CN86100204A (en) * | 1985-01-17 | 1986-08-13 | 通用电气公司 | The method for production of having the integrated circuit silicon small pieces compound of hotmelt on the silicon base |
| TWI234211B (en) * | 2003-12-26 | 2005-06-11 | Advanced Semiconductor Eng | Method for forming an underfilling layer on a bumped wafer |
| CN101075580A (en) * | 2007-06-01 | 2007-11-21 | 日月光半导体制造股份有限公司 | Method for cutting crystal wafer |
| CN103597578A (en) * | 2011-05-27 | 2014-02-19 | 康宁股份有限公司 | Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer |
| CN104064509A (en) * | 2014-07-09 | 2014-09-24 | 浙江中纳晶微电子科技有限公司 | Temporary bonding method and separation method of wafers |
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| CN111599743A (en) | 2020-08-28 |
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