CN111446192A - Glass carrier plate with groove-shaped window hole - Google Patents
Glass carrier plate with groove-shaped window hole Download PDFInfo
- Publication number
- CN111446192A CN111446192A CN202010147747.5A CN202010147747A CN111446192A CN 111446192 A CN111446192 A CN 111446192A CN 202010147747 A CN202010147747 A CN 202010147747A CN 111446192 A CN111446192 A CN 111446192A
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- China
- Prior art keywords
- glass carrier
- wafer
- carrier plate
- glass
- side end
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67333—Trays for chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67333—Trays for chips
- H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a glass carrier plate with a groove-shaped window hole, wherein a wafer is arranged at the side end of the glass carrier plate, an adhesive is arranged between the glass carrier plate and the wafer, and the glass carrier plate and the wafer are fixedly connected through bonding of the adhesive. The glass carrier plate and the wafer are concentrically distributed, the thickness of the glass carrier plate is 200-700 mu m, and the final thickness of the wafer is 20-300 mu m. The outer side end of the glass carrier plate 1 is provided with a concave surface, the side end of the concave surface is provided with a plurality of window holes, after the glass carrier plate is corroded or subjected to material reduction processing, the thickness of the thinnest part of the concave surface is 20-200 mu m, the outer side end of the concave surface forms annular protective glass, and the width of the annular protective glass is 3-10 mm. The adhesive is arranged between the glass carrier plate and the wafer, and the glass carrier plate and the wafer are fixedly connected through bonding of the adhesive and are firmly fixed; meanwhile, when the wafer is electroplated, the bonding agent is removed by using oxygen plasma etching, and then double-sided electroplating can be carried out, so that the electroplating efficiency is improved.
Description
Technical Field
The invention relates to a glass carrier plate, in particular to a glass carrier plate with a groove-shaped window hole.
Background
After the wafer is cut from the ingot, it is necessary to perform processes such as polishing, thinning, etching, and ion implantation. Because the thickness of the wafer is very small, the thickness of some ultra-thin wafers can be thinned to 20-100 microns. It is clear that directly clamping the wafer for processing is very demanding. Therefore, in order to facilitate the loading and the transportation of the wafer during the wafer processing process, a widely used method is to use a glass carrier as a medium for loading the wafer.
The above method for mounting a glass carrier still has disadvantages, and when etching the back of a wafer, a positioning cursor needs to be projected on the surface of the wafer for precise positioning and processing. Due to the arrangement of the glass carrier plate, optical positioning marks are fuzzy, and optical alignment can hardly be completed especially when the thickness of the glass carrier plate reaches 400-700 micrometers. On the other hand, in the power device of the MOSFET and IGBT and the 3D production packaging process, two surfaces of the wafer need to be electroplated, and since one surface of the wafer is attached to the glass carrier plate, electroplating cannot be performed, and an operator needs to electroplate one surface first and then turn over the wafer to electroplate the other surface, which is very inconvenient.
Disclosure of Invention
In order to solve the above-mentioned drawbacks of the prior art, the present invention provides a glass carrier with a slot-shaped window, which can be subjected to double-sided coating or ion implantation after being windowed, thereby improving the production efficiency. If the glass carrier plate cannot be windowed and only has a bearing function, errors can be generated in the front engineering, and bonding difficulty can be caused during special film coating, so that the implementation of other engineering after the back surface is thinned is influenced. According to the invention, the bonding agent is arranged between the glass carrier plate and the wafer, and the glass carrier plate and the wafer are fixedly connected through bonding of the bonding agent, so that the fixation is firm;
meanwhile, when the wafer is electroplated, the oxygen plasma etching bonding agent is firstly used, and then the simultaneous double-sided electroplating can be carried out, so that the whole process flow is simplified, the transmission step of thinning the wafer between machines is reduced, and the damage risk is reduced.
The purpose of the invention can be realized by the following technical scheme:
the glass carrier plate with the groove-shaped window holes is characterized in that a concave surface is formed at the outer side end of the glass carrier plate, a plurality of window holes are formed at the side end of the concave surface, and annular protective glass is formed at the outer side end of the concave surface.
The side end of the glass carrier plate is provided with a wafer, and a bonding agent is arranged between the glass carrier plate and the wafer.
Furthermore, the glass carrier plate and the wafer are fixedly connected through bonding of a bonding agent.
Further, the glass carrier plate and the wafer are concentrically distributed.
Furthermore, the thickness of the glass carrying plate is 200-700 μm, and the thickness of the wafer 2 is 20-300 μm.
Furthermore, the thinnest part of the concave surface is 20-200 μm in thickness.
Further, the width of the annular protective glass is 3 mm-10 mm.
The invention has the beneficial effects that:
1. according to the invention, the bonding agent is arranged between the glass carrier plate and the wafer, and the glass carrier plate and the wafer are fixedly connected through bonding of the bonding agent, so that the fixation is firm;
2. when the invention is used for electroplating the wafer, the oxygen plasma etching binding agent is firstly used, and then the double-sided electroplating can be carried out, thereby improving the electroplating efficiency.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic view of the overall structure of the present invention;
fig. 2 is a schematic cross-sectional view of the overall structure of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A glass carrier with a groove-shaped window hole is disclosed, as shown in fig. 1 and 2, a wafer 2 is arranged at the side end of a glass carrier 1, a bonding agent 3 is arranged between the glass carrier 1 and the wafer 2, and the glass carrier 1 and the wafer 2 are fixedly connected through bonding agent 3. Wherein, the glass carrier plate 1 and the wafer 2 are concentrically distributed, the thickness of the glass carrier plate 1 is 200 μm-700 μm, and the thickness of the wafer 2 is 20 μm-300 μm.
The outer side end of the glass carrier plate 1 is provided with a concave surface 11, the side end of the concave surface 11 is provided with a plurality of window holes 12, after the glass carrier plate is corroded or subjected to material reduction processing, the thickness of the thinnest part of the concave surface 11 is 20-200 mu m, the outer side end of the concave surface 11 forms annular protective glass 13, and the width of the annular protective glass 13 is 3-10 mm.
A double-sided electroplating process for a glass carrier plate and a wafer with a groove-shaped window hole comprises the following steps:
1. performing a yellow light process on the glass carrier 1, and protecting the grain cutting line by using a photoresist coating pattern to expose a grain range;
2. the groove-like structure of the carrier plate is produced by means of laser or etching or sandblasting, leaving a thickness of 5-50 microns of glass in the range of the positions of the grains.
3. Bonding and connecting the glass carrier plate 1 with the groove-shaped structure with the wafer 2;
4. thinning the back of the wafer 2;
5. performing yellow light, ion injection, dry ash removal and wet stripping cleaning processes on the back surface of the wafer 2;
6. removing the glass with the thickness of 5-50 microns remained by a hydrofluoric acid etching process to expose the positions of the crystal grains;
7. removing the bonds at the die sites with an oxygen plasma;
8. carrying out a double-sided electroplating process;
9. and removing the glass carrier plate by laser de-bonding separation, and carrying out subsequent production manufacturing process.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (6)
1. The glass carrier plate with the groove-shaped window holes is characterized in that a concave surface (11) is formed at the outer side end of the glass carrier plate (1), a plurality of window holes (12) are formed at the side end of the concave surface (11), and annular protective glass (13) is formed at the outer side end of the concave surface (11);
the glass carrier (1) side is provided with a wafer (2), and a bonding agent (3) is arranged between the glass carrier (1) and the wafer (2).
2. A glass carrier with a slot-shaped window according to claim 1, wherein the glass carrier (1) and the wafer (2) are fixedly bonded by a bonding agent (3).
3. A glass carrier with a slot-shaped window according to claim 2, characterized in that the glass carrier (1) and the wafer (2) are concentrically arranged.
4. A glass carrier with a slot-shaped window according to claim 3, wherein the thickness of the glass carrier (1) is 200 μm to 700 μm, and the thickness of the wafer 2 is 20 μm to 300 μm.
5. A glass carrier with a slot-shaped window according to claim 1, characterized in that the thinnest part of the recessed surface (11) has a thickness of 20 μm to 200 μm.
6. A glass carrier with a slot-shaped window according to claim 1, characterized in that the width of the ring-shaped cover glass (13) is 3mm to 10 mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010147747.5A CN111446192A (en) | 2020-03-05 | 2020-03-05 | Glass carrier plate with groove-shaped window hole |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010147747.5A CN111446192A (en) | 2020-03-05 | 2020-03-05 | Glass carrier plate with groove-shaped window hole |
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CN111446192A true CN111446192A (en) | 2020-07-24 |
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CN202010147747.5A Pending CN111446192A (en) | 2020-03-05 | 2020-03-05 | Glass carrier plate with groove-shaped window hole |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113718308A (en) * | 2021-08-31 | 2021-11-30 | 浙江同芯祺科技有限公司 | Wafer double-side electroplating device and process |
Citations (7)
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US20060081184A1 (en) * | 2004-10-19 | 2006-04-20 | Yeh Te L | Evaporation mask with high precision deposition pattern |
US20060270093A1 (en) * | 2003-04-24 | 2006-11-30 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20070072337A1 (en) * | 2005-09-27 | 2007-03-29 | Hitachi Displays, Ltd. | Method of manufacturing the organic electroluminescent display and organic electroluminescent display manufactured by the method |
US20100311226A1 (en) * | 2006-10-20 | 2010-12-09 | Lintec Corporation | Die-Sorting Sheet and Method for Transporting Chips Having Adhesive Layer |
TW201133675A (en) * | 2010-03-16 | 2011-10-01 | Ind Tech Res Inst | Wafer support substrate and method therefor |
CN103064247A (en) * | 2011-10-24 | 2013-04-24 | 信越化学工业株式会社 | Electronic grade glass substrate and making method |
US20190363057A1 (en) * | 2018-05-25 | 2019-11-28 | Infineon Technologies Ag | Method for Processing a Semiconductor Wafer, Semiconductor Composite Structure and Support Structure for Semiconductor Wafer |
-
2020
- 2020-03-05 CN CN202010147747.5A patent/CN111446192A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060270093A1 (en) * | 2003-04-24 | 2006-11-30 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20060081184A1 (en) * | 2004-10-19 | 2006-04-20 | Yeh Te L | Evaporation mask with high precision deposition pattern |
US20070072337A1 (en) * | 2005-09-27 | 2007-03-29 | Hitachi Displays, Ltd. | Method of manufacturing the organic electroluminescent display and organic electroluminescent display manufactured by the method |
US20100311226A1 (en) * | 2006-10-20 | 2010-12-09 | Lintec Corporation | Die-Sorting Sheet and Method for Transporting Chips Having Adhesive Layer |
TW201133675A (en) * | 2010-03-16 | 2011-10-01 | Ind Tech Res Inst | Wafer support substrate and method therefor |
CN103064247A (en) * | 2011-10-24 | 2013-04-24 | 信越化学工业株式会社 | Electronic grade glass substrate and making method |
US20190363057A1 (en) * | 2018-05-25 | 2019-11-28 | Infineon Technologies Ag | Method for Processing a Semiconductor Wafer, Semiconductor Composite Structure and Support Structure for Semiconductor Wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113718308A (en) * | 2021-08-31 | 2021-11-30 | 浙江同芯祺科技有限公司 | Wafer double-side electroplating device and process |
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Application publication date: 20200724 |
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