CN110931614B - Front-mounted integrated unit diode chip - Google Patents
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- CN110931614B CN110931614B CN201911253684.5A CN201911253684A CN110931614B CN 110931614 B CN110931614 B CN 110931614B CN 201911253684 A CN201911253684 A CN 201911253684A CN 110931614 B CN110931614 B CN 110931614B
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
The invention provides a forward integrated unit diode chip which comprises a first conduction type bonding pad, a second conduction type bonding pad and a diode mesa structure, wherein the first conduction type bonding pad and the second conduction type bonding pad are arranged at intervals along the direction of an x axis, the diode mesa structure comprises a plurality of diode units, and the width of each diode unit along the direction of a y axis is gradually reduced from the middle to two sides of the forward integrated unit diode chip along the direction of the y axis. According to the invention, through the design of the uneven mesa structure, the high-quality LED light source with ultra-even current distribution, heat distribution, wavelength distribution and narrow and half-high is obtained, the technical problem that the diode structure in the prior art is greatly limited in three important parameters of lumen efficiency, lumen density output and lumen cost is solved, the lumen output of a chip in unit area is improved, and the lumen cost is reduced.
Description
Technical Field
The invention relates to the field of semiconductor material and device process, in particular to a semiconductor photoelectric device.
Background
The conventional forward-mounted integrated unit diode chip has uneven current diffusion, which causes the loss of luminous efficiency, the heat dissipation of the diode unit diode chip under the existing structure is realized by a sapphire substrate, and the heat dissipation is poor, so that the efficiency and the stability of the unit diode chip are influenced, therefore, the main application field of the forward-mounted light-emitting diode unit diode chip is the market of medium-small power unit diode chips below 0.5 watt, and the forward-mounted light-emitting diode chip cannot provide a product with high lumen output per unit area. The non-uniformity of current diffusion, the non-uniformity of heat diffusion and the non-uniformity of light extraction cause the LED to have great limitations on three important parameters of lumen efficiency, lumen density output and lumen cost, and the current integral diode technology on the market cannot provide an effective solution.
One prior art is U.S. patent application publication No. US6614056B1, shown in fig. 1, 21/23 being an N-type electrode and 19/20ab being a P-type electrode. The mechanism of current diffusion is as follows: and after the ITO (indium tin oxide) and the p-GaN form ohmic contact, 19/20ab metal is deposited on the ITO, holes are diffused to the p-GaN in an electrode wire mode and reach the quantum well active region, and electrons diffused from the quantum well active region and the 21/22N-type electrode are radiated and recombined to emit light, so that the light-emitting LED device is obtained. By adopting ITO transparent conductive ohmic contact and a current diffusion mode of a metal lead, the total current diffusion is very uneven because the ITO resistivity is high and the conductivity of the p-type GaN material is poor. In addition, because the current diffusion length of the LED unit diode chip is inversely proportional to the square root of the current density, the current diffusion length is shorter under the injection of large current, so that the current diffusion of the unit diode chip is more uneven, the efficiency is lower, and the heat dissipation is more difficult.
Non-uniformity in current spreading of the diode chip of the forward integrated unit results in a loss of luminous efficiency. The heat dissipation of the diode unit diode chip under the existing structure is realized by the sapphire substrate, and the heat dissipation is poor, so that the efficiency and the stability of the diode unit chip are affected, and therefore, the main application field of the normally installed light emitting diode unit chip is the market of medium and small power unit diode chips below 0.5 watt, and a product with high lumen output per unit area cannot be provided. The non-uniformity of current diffusion, the non-uniformity of heat diffusion and the non-uniformity of light extraction cause great popularity in three important parameters of lumen efficiency, lumen density output and lumen cost, and the forward-mounted light emitting diode technology in the market cannot provide an effective solution at present.
Second prior art conference paper of SPIE Vol.10021100210X-12016, as shown in FIG. 2, the near-field analysis diagram (upper) and the normalized current distribution diagram (lower) on the middle line of the LED chip being mounted, the size of the chip is 1.2mm × 1.2 mm. The light intensity distribution in the near-field analysis chart is proportional to the distribution of current spreading. It can be seen that the concentration is 7A/cm2When the current is small, the current density in some edge regions is less than 80% of that in the middle region, and when the current is increased by 70A/cm2By this time, the current density in some regions of the edge is less than even 50% of the middle region. Therefore, the luminous efficiency, heat dissipation and stability of the LED under high current are severely limited.
Disclosure of Invention
The invention provides a forward-mounted integrated unit diode chip with high lumen efficiency and high lumen density output, aiming at solving the technical problem that three important parameters of the diode structure, namely lumen efficiency, lumen density output and lumen cost, in the prior art are greatly limited.
In order to achieve the above object, the present invention provides a forward integrated unit diode chip, which includes a first conductive type pad, a second conductive type pad and a diode mesa structure, wherein the first conductive type pad and the second conductive type pad are spaced apart from each other along an x-axis direction, the diode mesa structure includes a plurality of diode units, and a width of each diode unit along a y-axis direction is gradually reduced from a middle to two sides of the forward integrated unit diode chip along the y-axis direction.
Wherein lengths of the plurality of diode units in the x-axis direction become gradually smaller from the first conductive type pad to the second conductive type pad in the x-axis direction.
The x-axis direction is the length direction of the integrated unit diode chip being installed, and the y-axis direction is the width direction of the integrated unit diode chip being installed.
The forward integrated unit diode chip further comprises a first conductive type electrode wire and a second conductive type electrode wire, wherein the first conductive type electrode wire and the second conductive type electrode wire extend along the x-axis direction and are arranged at intervals along the y-axis direction.
The diode chip of the forward integrated unit further comprises a first conductive type electrode, the first conductive type electrode is connected with the first conductive type bonding pad through a first conductive type electrode wire, and the first conductive type electrode further extends to the diode unit.
The first conductive type bonding pad and the second conductive type bonding pad are arranged at the edges of two opposite sides of the positively-mounted integrated unit diode chip along the y-axis direction, and are respectively arranged in the middle of the edges along the y-axis direction; the side, close to each other, of the first conduction type bonding pad and the second conduction type bonding pad is arc-shaped, and the arc-shaped first conduction type bonding pad and the arc-shaped second conduction type bonding pad are arranged in a protruding mode towards each other respectively.
Wherein, the diode unit is provided with a groove on at least one side wall surface from the bottom to the top of the table surface.
The width of the groove on the side wall of the diode unit is 0.5 nanometer-10 micrometer, and the depth is 0.5 nanometer-10 micrometer.
The side wall of the diode unit and the horizontal plane form a certain included angle alpha, and the included angle alpha is larger than 0 degree and smaller than or equal to 90 degrees.
Wherein, the diode unit is provided with a porous structure.
According to the invention, through the design of the uneven mesa structure, the high-quality LED light source with ultra-even current distribution, heat distribution, wavelength distribution and narrow and half-high is obtained, the technical problem that the diode structure in the prior art is greatly limited in three important parameters of lumen efficiency, lumen density output and lumen cost is solved, the lumen output of a chip in unit area is improved, and the lumen cost is reduced.
Drawings
FIG. 1 is a prior art diode cell block diagram;
FIG. 2 is a prior art diode cell block diagram;
FIG. 3 is a top view of a uniformly light-emitting front-mounted integrated cell diode chip provided in embodiment 1 of the present invention;
FIG. 4 is a top view of a uniformly illuminated front-mounted integrated cell diode chip provided in embodiment 2 of the present invention;
FIG. 5 is a top view of a uniformly light-emitting front-mounted integrated cell diode chip provided in embodiment 2 of the present invention;
fig. 6 is a schematic diagram of a diode unit provided in embodiment 1 of the present invention;
FIG. 7 is a schematic diagram of a trench structure on a sidewall of a diode cell according to the present invention;
FIG. 8 is a top view of a uniformly illuminated front-mounted integrated cell diode chip provided in embodiment 3 of the present invention;
the solar cell comprises a first conductive type electrode 1, a second conductive type electrode 2, a transparent electrode 3, an insulating medium layer 4, a second conductive type layer 5, a quantum well active region 6, a first conductive type layer 7, an intrinsic gallium nitride layer 8, a substrate 9, a reflector 10, a first conductive type bonding pad 11, a second conductive type bonding pad 12, a first conductive type electrode wire 13, a second conductive type electrode wire 14, a mesa structure 15, a diode unit 16, a groove structure 17 and a hole structure 18.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.
In view of the great limitations of the three important parameters of the existing diode structure, namely, the lumen efficiency, the lumen density output and the lumen cost, the embodiment of the invention provides a forward-mounted integrated unit diode with high lumen efficiency and high lumen density output, and the invention is described in detail below with reference to the attached drawings.
A front-mounted integrated cell diode chip that emits light uniformly, comprising: the diode comprises a first conduction type electrode, a second conduction type electrode and a diode mesa structure positioned between the first conduction type electrode and the second conduction type electrode, wherein the diode mesa structure comprises n diode units, the n diode units have different lengths along an x-axis direction or different widths along a y-axis direction, the area of the mesa structure is determined according to the current diffusion length, and n is more than or equal to 2; the planar position function of the n diode units relative to the mesa structure is:
The diode mesa structure comprises a first conduction type bonding pad and a second conduction type bonding pad, wherein the first conduction type electrode is connected with the first conduction type bonding pad through a first conduction type electrode wire, and the second conduction type electrode is connected with the second conduction type bonding pad through a second conduction type electrode wire. The first conductive type electrode wire and the second conductive type electrode wire are connected into a line type electrode wire; the line-type electrode wire is an electrode connecting wire between the diode units. The width of the linear electrode wire is 0.001-20 microns, and the thickness of the linear electrode wire is 0.001-10 microns.
The n diode units are different in size and shape or partially identical. The length of the n diode units along the x-axis direction is L0，L1，L2，…Lx，…Ln(ii) a Said L0≥L1≥L2≥…Lx…≥Ln. The width of the n diode units along the y-axis direction is 0.001-200 microns; the width of the n diode units from the middle to the two sides along the y-axis direction is W0，W1，W2，…Wy，…WnWherein W is0≥W1≥W2≥…Wy…≥Wn. The connection mode of the diode unit is as follows: parallel connection, series connection or series-parallel connection mixing with set proportion. The diode unit is shaped as follows: triangle, square, rectangle, pentagon, hexagon, circle, arbitrary self-defined shape, and the number of diode units is 2-1000 hundred million. The diode mesa structure includes a hole structure.
The integrated unit diode chip capable of uniformly emitting light comprises groove structures, wherein the groove structures are located among diode units, the widths of grooves among n diode units are the same or different, and the width of the groove is 0.001-30 micrometers.
The side wall of the diode unit and the horizontal plane form a certain included angle alpha, and the included angle alpha is larger than 0 degree and smaller than or equal to 90 degrees. The shape of the side wall of the diode unit is trapezoidal, quadrangular, curved and other arbitrarily defined shapes; at least one side wall surface of the diode unit is provided with a groove distribution along the direction from the bottom to the top of the mesa. The cross section of the groove on the side wall of the diode unit is triangular, quadrilateral, arc and other arbitrary defined shapes, the groove is unevenly distributed or evenly distributed in the horizontal direction, the uneven distribution of the groove on the side wall in the horizontal direction comprises equidistant and non-equidistant periodic distribution or equidistant and non-equidistant non-periodic distribution, the width of the groove on the side wall is 0.5 nanometer-10 micrometer, and the depth is 0.5 nanometer-10 micrometer.
The n diode units in the diode mesa structure comprise an insulating medium layer, a transparent electrode, a first conduction type layer, a first conduction type electrode, a second conduction type layer, a second conduction type electrode and a quantum well active region, wherein the second conduction type electrode and the quantum well active region are positioned on the first conduction type layer, the second conduction type layer is positioned on the quantum well active region, the insulating medium layer is positioned on the first conduction type layer and partially covers the second conduction type layer, the transparent electrode is positioned on the second conduction type layer and partially covers the insulating medium layer, and the second conduction type electrode is positioned on the insulating medium layer and partially covers the transparent electrode. The insulating dielectric layer is made of silicon dioxide, aluminum oxide and silicon nitride. An intrinsic gallium nitride layer is arranged between the diode mesa structure and the substrate, the substrate is positioned on the reflector, and the reflector is made of silver, aluminum or a distributed Bragg reflector.
Example 1
The present embodiment provides a forward integrated unit diode chip with uniform light emission, as shown in fig. 3, including: first conductivity type electrode 1, first conductivity type pad 11, second conductivity type pad 12, first conductivity type electrode line 13, second conductivity type electrode line 14, diode mesa structure 15, diode mesa structure include 56 square diode units 16 and slot 17 altogether of 6 rows, the slot structure is located between the diode units. The diode units are uniformly distributed in the mesa structure, and the length of the diode units along the x-axis direction is 10-100 nanometers. Each row of diode cells has a length in the x-axis direction that is not equal or equal from the vicinity of the second conductive type pad. When unequal, the lengths are defined as L0，L1，L2，L3…LnWherein the width of the diode unit satisfies L0>L1>L2>L3>…>Ln。
In some preferred embodiments, the diode cell has a length of 100 microns in the x-axis direction; in other preferred embodiments, the diode cell has a length of 10 microns in the x-axis direction; in other preferred embodiments, the diode has a length of 1 micron in the x-axis direction.
The first conductive type electrode wires 13 and the second conductive type electrode wires 14 are line type electrode wires, the width of the line type electrode wires is 0.001-20 micrometers, the thickness of the line type electrode wires is 0.001-10 micrometers, the electrode wires are made of indium tin oxide materials, and the line type electrode wires are designed in a straight line layout mode. The first conductive type bonding pad 11 and the second conductive type bonding pad 12 are in the shape of an arc-shaped irregular polygon, the number of the bonding pads is 1, and the bonding pads are located on the edge of the mesa structure. The grooves 17 are cross-shaped, have a rectangular cross section and are uniformly distributed in the horizontal direction.
The width of the groove among the n diode units is the same or different, and the width of the groove is 0.001-30 microns. The side wall of the diode unit and the horizontal plane form a certain included angle alpha, and the included angle alpha is larger than 0 degree and smaller than or equal to 90 degrees. As shown in fig. 7, the shape of the sidewall of the diode unit is trapezoidal, and may also be quadrilateral, curved surface, or any other shape defined arbitrarily. At least one side wall surface of the diode unit is provided with grooves distributed along the direction from the bottom to the top of the table surface, and the cross section of the groove on the side wall of the diode unit is triangular, and can also be quadrilateral, arc and other arbitrarily defined shapes. The width of the groove on the side wall of the diode unit is 0.5 nanometer to 10 micrometers, and the depth of the groove is 0.5 nanometer to 10 micrometers.
As shown in fig. 6, the n diode units in the diode mesa structure include a second conductivity type electrode 2, a transparent electrode 3, an insulating medium layer 4, a first conductivity type layer 7, a second conductivity type layer 5, and a quantum well active region 6. The second conductive type electrode 2 and the quantum well active region 6 are positioned on the first conductive type layer 7, the second conductive type layer 5 is positioned on the quantum well active region 6 and positioned on the second conductive type layer 5, the insulating medium layer 4 is positioned on the first conductive type layer 7 and partially covers the transparent electrode 3, and the second conductive type electrode 2 is positioned on the insulating medium layer 4 and partially covers the transparent electrode 3.
Example 2
This embodiment provides a uniformly illuminated face-up integrated cell diode dieA sheet, as shown in fig. 4, comprising: the diode comprises a first conductive type electrode 1, a first conductive type pad 11, a second conductive type pad 12, a first conductive type electrode line 13, a second conductive type electrode line 14 and a diode mesa structure 15, wherein the diode mesa structure comprises 6 rows of 16 squares with the same size and 40 rectangular diode units with the same length and different widths and a groove structure 17, and the groove structure is positioned between the diode units. The diode units in each row are equal in size, the diode units are distributed in the mesa structure, and the width of each diode unit along the y-axis direction is 10-100 nanometers. The diode units are different or equal in width in the y-axis direction from the middle position. When they are not equal, the width is defined as W from the middle to both sides0，W1，W2，W3…Wm(ii) a Wherein the width of the diode unit satisfies W0>W1>W2>W3>…>Wm。
In some preferred embodiments, the diode cell has a width of 100 microns along the y-axis; in other preferred embodiments, the diode cell has a width of 10 microns in the y-axis direction; in other preferred embodiments, the diode has a width in the y-direction of 1 micron.
The present embodiment also provides a uniformly light emitting front-mounted integrated cell diode chip, as shown in fig. 5, the diode mesa structure includes 56 square diode cells in 6 rows and a trench structure 17, and the trench structure is located between the diode cells. The diode units are uniformly distributed in the mesa structure, and the length of the diode units along the x-axis direction is 10-100 nanometers. The width of the grooves between the diode units along the y-axis direction is equal or unequal, and the width is respectively defined as Lq0，Lq1，Lq2，Lq3，…LqnThe widths may be scaled, with the width of the trenches being in the range of 0.001-30 microns.
Example 3
The present embodiment provides a forward integrated unit diode chip with uniform light emission, as shown in fig. 8, including: a first-conductivity-type electrode 1, a first-conductivity-type pad 11, a second-conductivity-type pad 12, a first-conductivity-type electrode line 13, a second-conductivity-type electrode line 14, a diode mesa structure 15, a diode cell 16, and a trench 17. The diode mesa structure includes 6 rows of 102 equally sized uniformly distributed triangular diode cells 16 having a length of 40 microns along the x-axis. The diode mesa structure is arranged in a triangle, and the size of the mesa structure is smaller than the diffusion length of current injection. The diode units are in triangular shape and are distributed according to uniform symmetrical arrangement.
In some preferred embodiments, the diode cell has a width of 10 nanometers along the y-axis, and in other preferred embodiments, the diode cell has a width of 100 nanometers along the y-axis.
Each diode unit is additionally provided with a hole structure, the hole structure comprises two hole units, and the diameter of each hole unit is 1 nanometer-20 micrometers. The hole units are arranged symmetrically, asymmetrically, periodically, non-periodically or randomly. The cell shape may also be triangular, square, rectangular, pentagonal, hexagonal, circular, and any other arbitrarily defined shape, and is not limited to the shape shown in fig. 8.
The upright integrated unit diode chip capable of emitting light uniformly provided by the embodiment of the invention has the following beneficial effects:
(1) the length design of the diode unit is controlled within the current diffusion length, the optimized geometric design with certain degree of freedom can further improve the light emitting efficiency, and the problem of uneven current diffusion of an n-type electrode and a p-type electrode which troubles the design of a diode chip of an LED unit can be solved simultaneously, so that higher photoelectric conversion efficiency/lumen efficiency is obtained;
(2) according to the invention, the light-emitting area of the side wall is increased by the micro-nano structure of each diode unit, so that the light extraction efficiency is improved;
(3) the size of the integrated unit diode chip is optimized, so that a larger side wall heat dissipation area is brought, the integrated unit diode chip has better heat dissipation performance, injection of super-large current density is allowed, the stability of the integrated unit diode chip is not influenced, the lumen output of the unit diode chip in unit area is greatly improved, and the lumen cost is reduced;
(4) the design of the integrated unit diode chip can realize ultra-uniform current injection, thereby obtaining higher efficiency, better wavelength uniformity, narrower half-height width of a light-emitting spectrum, better heat dissipation uniformity and better device stability, and the current injection uniformity is far more than about 50 percent of the current injection uniformity of the normal device;
(5) the integrated unit diode chip is suitable for LED products of various color systems such as UVC, UVA, UVB, purple light, blue light, green light, yellow light, red light, infrared light and the like, and can be used in the application fields of LED illumination, backlight, display, plant illumination, medical treatment and other semiconductor light-emitting devices.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. The forward integrated unit diode chip is characterized by comprising a first conduction type bonding pad, a second conduction type bonding pad and a diode mesa structure, wherein the first conduction type bonding pad and the second conduction type bonding pad are arranged at intervals along the direction of an x axis;
the forward integrated unit diode chip further comprises a first conductive type electrode wire, a second conductive type electrode wire and a first conductive type electrode, wherein the first conductive type electrode wire and the second conductive type electrode wire extend along the x-axis direction and are arranged at intervals along the y-axis direction; the first conductive-type electrode and the first conductive-type pad are connected by the first conductive-type electrode line, and the first conductive-type electrode further extends onto the diode cell.
2. The forward mounted integrated cell diode chip of claim 1, wherein a length of the plurality of diode cells along the x-axis direction tapers from the first conductivity type pad to the second conductivity type pad along the x-axis direction.
3. The forward mounted integrated unit diode chip of claim 2, wherein the x-axis direction is a length direction of the forward mounted integrated unit diode chip and the y-axis direction is a width direction of the forward mounted integrated unit diode chip.
4. The forward mounted integrated unit diode chip of claim 1, wherein the first and second conductivity type pads are disposed at opposite side edges of the forward mounted integrated unit diode chip in a y-axis direction and are each centered along the y-axis direction at the edge; the side, close to each other, of the first conduction type bonding pad and the second conduction type bonding pad are arc-shaped, and the arc-shaped first conduction type bonding pad and the arc-shaped second conduction type bonding pad are arranged in a protruding mode towards each other respectively.
5. The forward-mounted integrated cell diode chip of claim 1, wherein at least one sidewall of the diode cell is grooved in a direction from the bottom to the top of the mesa.
6. The forward-mounted integrated cell diode chip of claim 5,
the width of the groove on the side wall of the diode unit is 0.5 nanometer-10 micrometer, and the depth is 0.5 nanometer-10 micrometer.
7. The forward-mounted integrated cell diode chip of claim 5,
the side wall of the diode unit and the horizontal plane form a certain included angle alpha, and the included angle alpha is larger than 0 degree and smaller than or equal to 90 degrees.
8. The forward-mounted integrated cell diode chip of claim 1, wherein the diode cell is provided with a hole structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911253684.5A CN110931614B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911253684.5A CN110931614B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
| CN201910379519.8A CN111916432B (en) | 2019-05-08 | 2019-05-08 | Uniform light emitting diode chip with forward-mounted integrated unit |
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| WO2003056876A2 (en) * | 2001-12-14 | 2003-07-10 | Digital Optics International Corporation | Uniform illumination system |
| CN100382336C (en) * | 2003-05-12 | 2008-04-16 | 胜华科技股份有限公司 | Organic luminous diode display device |
| JP2007042681A (en) * | 2005-07-29 | 2007-02-15 | Toshiba Lighting & Technology Corp | Light-emitting diode device |
| DE102007041896A1 (en) * | 2007-09-04 | 2009-03-05 | Osram Opto Semiconductors Gmbh | Semiconductor device and method for manufacturing a semiconductor device |
| CN101488547B (en) * | 2008-12-30 | 2011-11-09 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
| KR101665932B1 (en) * | 2010-02-27 | 2016-10-13 | 삼성전자주식회사 | Semiconductor light emitting device having a multi-cell array, light emitting module and illumination apparatus |
| CN102456783B (en) * | 2010-10-20 | 2014-11-05 | 展晶科技(深圳)有限公司 | Ultraviolet light emitting diode chip with vertical structure and manufacture method thereof |
| CN102185073B (en) * | 2011-04-01 | 2012-09-19 | 厦门市三安光电科技有限公司 | Flip light-emitting diode and manufacturing method thereof |
| CN102709432A (en) * | 2012-05-10 | 2012-10-03 | 施科特光电材料(昆山)有限公司 | Network-shaped electrode applicable to high-power GaN-based LED chips |
| CN102983147A (en) * | 2012-09-24 | 2013-03-20 | 杭州士兰明芯科技有限公司 | Light emitting diode chip and production method thereof |
| CN103107250B (en) * | 2013-02-05 | 2016-01-13 | 中国科学院半导体研究所 | The preparation method of wafer level led array structure |
| CN203386751U (en) * | 2013-07-15 | 2014-01-08 | 广东洲明节能科技有限公司 | Silicon-based multiple module-group layer superposing LED (Light-Emitting Diode) structure |
| DE102014011893B4 (en) * | 2013-08-16 | 2020-10-01 | Seoul Viosys Co., Ltd. | light emitting diode |
| US9257366B2 (en) * | 2013-10-31 | 2016-02-09 | International Business Machines Corporation | Auto-compensating temperature valve controller for electro-rheological fluid micro-channel cooled integrated circuit |
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| CN106711301B (en) * | 2015-11-12 | 2020-10-27 | 美科米尚技术有限公司 | Light emitting diode and manufacturing method thereof |
| CN113991003A (en) * | 2015-12-01 | 2022-01-28 | 夏普株式会社 | Image forming element and method for manufacturing the same |
| CN106981551A (en) * | 2017-04-10 | 2017-07-25 | 华南师范大学 | A kind of LED chip electrode structure and preparation method thereof |
| CN107146840A (en) * | 2017-06-30 | 2017-09-08 | 苏州瑞而美光电科技有限公司 | A kind of flip LED chips array structure and preparation method thereof |
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