CN110017434A - Wavelength converter and its light source - Google Patents
Wavelength converter and its light source Download PDFInfo
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- CN110017434A CN110017434A CN201810021726.1A CN201810021726A CN110017434A CN 110017434 A CN110017434 A CN 110017434A CN 201810021726 A CN201810021726 A CN 201810021726A CN 110017434 A CN110017434 A CN 110017434A
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- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/69—Details of refractors forming part of the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Led Device Packages (AREA)
Abstract
A kind of Wavelength converter and its light source, the Wavelength converter include: substrate (110)；And luminescent ceramic layer (220), the luminescent ceramic layer are used to absorb exciting light and be emitted the stimulated light that wavelength is different from the exciting light；Wherein, inorganic diffusing reflection layer (210) and adhesive layer (500) are laminated between the substrate and luminescent ceramic layer, the inorganic diffusing reflection layer is for reflecting the non-switched exciting light of the stimulated light and part.The present invention passes through setting luminescent ceramic layer and radiating fin, effectively raise the heat dissipation effect of Wavelength converter, it ensure that combining closely between multiple components by adhesive layer, the setting of ceramic substrate then reduces stress drawing crack phenomenon caused by thermal expansion coefficient difference, improves the reliability and service life of Wavelength converter.
Description
Technical Field
The invention relates to a wavelength conversion device and a light source thereof, belonging to the technical field of illumination and display.
Background
In the field of illumination display, laser light sources have become a hot point of research and development in recent years. Because the photoelectric conversion efficiency of the red laser and the green laser is low, especially the cost of the green laser is high, and the problems of heat dissipation and speckle are serious, the light source of the red, green and blue laser is difficult to be accepted by the market. The technology of remotely exciting the fluorescent powder to obtain visible light by blue laser is developed at the same time, and becomes the mainstream of the current laser display market.
In the prior art, in order to obtain high-brightness excitation light, an optical conversion device in a laser light source has been developed from an organic color wheel of silica gel packaged fluorescent powder to an inorganic color wheel of glass packaged fluorescent powder, a light emitting layer of the inorganic color wheel adopts glass packaged fluorescent powder, a reflecting layer adopts glass packaged diffuse reflection particles, a substrate adopts an aluminum nitride ceramic substrate, and the layers of structures are combined together through co-sintering.
In a laser light source with higher power, it is found that a bottleneck of performance improvement of the inorganic fluorescent color wheel is mainly that the thermal conductivity of the glass-encapsulated fluorescent powder layer is too low (mainly affected by glass, the thermal conductivity is less than 2W/m · k), and a large amount of generated heat cannot be rapidly and effectively diffused and transferred in the process of exciting the fluorescent powder to generate visible light by laser, so that in order to obtain a fluorescent color wheel and a laser light source with higher performance, the performance bottleneck of a light-emitting layer needs to be overcome.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a wavelength conversion device and a light source thereof, wherein a fluorescent ceramic layer and heat dissipation fins are arranged to effectively improve the heat dissipation effect of the wavelength conversion device, the adhesive layer ensures the tight combination of a plurality of components, the ceramic substrate reduces the stress cracking phenomenon caused by the difference of thermal expansion coefficients, and the reliability and the service life of the wavelength conversion device are improved.
The technical problem to be solved by the invention is realized by the following technical scheme:
a wavelength conversion device, the wavelength conversion device comprising: a substrate; and a fluorescent ceramic layer for absorbing excitation light and emitting excited light having a wavelength different from that of the excitation light;
and an inorganic diffuse reflection layer and an adhesive layer are laminated between the substrate and the fluorescent ceramic layer, and the inorganic diffuse reflection layer is used for reflecting the excited light and part of the unconverted excited light.
Preferably, the inorganic diffuse reflection layer includes white scattering particles and glass frit bonding the white scattering particles.
Preferably, the white scattering particles are Al2O3、TiO2、AlN、MgO、BN、ZnO、ZrO2And BaSO4One or more of them.
Preferably, the material of the fluorescent ceramic layer is pure-phase fluorescent ceramic or composite ceramic.
In order to avoid the substrate from being denatured at high temperature, the inorganic diffuse reflection layer and the fluorescent ceramic layer are bonded through sintering, and the inorganic diffuse reflection layer and the substrate are bonded through an adhesive layer.
In order to avoid stress tension cracking or pulling off the adhesive layer caused by the difference of the thermal expansion coefficients, a ceramic substrate is arranged between the substrate and the inorganic diffuse reflection layer, wherein the substrate is a heat conduction metal substrate.
Preferably, the ceramic substrate is bonded with the substrate by gluing or welding; the ceramic substrate is bonded with the inorganic diffuse reflection layer through sintering, and the inorganic diffuse reflection layer is bonded with the fluorescent ceramic layer through an adhesive layer; or the fluorescent ceramic layer and the inorganic diffuse reflection layer are bonded through sintering, and the inorganic diffuse reflection layer is bonded with the ceramic substrate through an adhesive layer.
Preferably, the thickness of the ceramic substrate is 500-3 mm, the thickness of the inorganic diffuse reflection layer is 50-150 μm, and the thickness of the fluorescent ceramic layer is 80-300 μm.
In order to improve the heat dissipation effect of the wavelength conversion device, heat dissipation fins are arranged on one side of the substrate, which is far away from the fluorescent ceramic layer.
The invention also provides a light source, which comprises an exciting light emitting device and the wavelength conversion device, wherein the exciting light emitting device is an incident light source of the wavelength conversion device.
In summary, the invention effectively improves the heat dissipation effect of the wavelength conversion device by arranging the fluorescent ceramic layer and the heat dissipation fins, ensures the tight combination among a plurality of components by the adhesive layer, reduces the stress crack phenomenon caused by the difference of the thermal expansion coefficients by arranging the ceramic substrate, and improves the reliability and the service life of the wavelength conversion device.
The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Drawings
FIG. 1 is a cross-sectional view of a wavelength conversion device according to the present invention;
FIG. 2 is a cross-sectional view of another embodiment of a wavelength conversion device according to the present invention;
fig. 3 is a top view of fig. 2.
Detailed Description
FIG. 1 is a cross-sectional view of a wavelength conversion device according to the present invention; FIG. 2 is a cross-sectional view of another embodiment of a wavelength conversion device according to the present invention; fig. 3 is a top view of fig. 2. As shown in fig. 1 to 3, the present invention provides a wavelength conversion device, including a substrate 110 and a fluorescent ceramic layer 220, wherein the fluorescent ceramic layer 220 is used for absorbing an excitation light and emitting an excited light with a wavelength different from that of the excitation light; an inorganic diffuse reflection layer 210 and an adhesive layer 500 are stacked between the substrate 110 and the fluorescent ceramic layer 220, and the inorganic diffuse reflection layer 210 is used for reflecting the excited light and part of the unconverted excited light.
In order to improve the heat dissipation capability of the wavelength conversion device, the side of the substrate 110 away from the fluorescent ceramic layer 220 is provided with heat dissipation fins 120, the substrate 110 is in a disk shape, and the side thereof provided with the heat dissipation fins 120 can be further connected with a driving device 300 (such as a rotating motor, etc.), and the driving device 300 is used for driving the substrate 110 to rotate around the central axis thereof, so that the light spots formed by the excitation light on the fluorescent ceramic layer 220 periodically act on the fluorescent ceramic layer 220 according to a circular path.
Preferably, the substrate 110 and the heat dissipation fins 120 are integrally formed, so as to ensure better heat conduction, the substrate 110 and the heat dissipation fins 120 are made of metal or metal alloy with good heat conductivity, such as aluminum, copper or silver, and the surface of the substrate 110 and the heat dissipation fins 120 is plated with copper after being made of aluminum due to the fact that copper is heavy; metal alloys such as brass, aluminum alloys, copper aluminum alloys. In order to achieve a good heat dissipation effect, the heat dissipation fins 120 are disposed over the substrate 110, and only the accommodating space of the driving device 300 is reserved.
The inorganic diffuse reflection layer 210 includes white scattering particles and glass frit adhering the white scattering particles, and reflects incident light. The white scattering particles are typically salts or oxides of the powder type, e.g. Al having a particle size in the range of 50nm to 5 μm2O3、TiO2、AlN、MgO、BN、ZnO、ZrO2、BaSO4White monomer powder, or mixture of at least two kinds of powder. These white scattering particles are substantially non-absorbing to light and are stable in nature and do not oxidize or decompose at high temperatures. Considering that the inorganic diffuse reflection layer 210 requires a good reflectivity and heat dissipation effect, it is preferable to select Al having a high combination property2O3And (3) powder. Of course, in order to realize the function of reflecting the laser light of the inorganic diffuse reflection layer 210, the white scattering particles need to have a certain density and thickness in the inorganic diffuse reflection layer, and the density and thickness can be determined through experiments. Preferably, the thickness of the inorganic diffuse reflecting layer 210 is 50 μm to 150 μm. The glass powder is an amorphous granular glass homogeneous body, such as silicate glass powder particles and the like, and has high transparency and stable chemical properties.
According to the invention, the inorganic diffuse reflection layer is arranged to replace the traditional metal reflection layer such as a silver layer, so that the problem of aging of the traditional metal reflection layer after high-power long-time operation can be avoided, and higher reflectivity can be obtained while a certain heat conduction performance is maintained.
In the embodiment of the present invention, the fluorescent ceramic layer 220 functions to receive irradiation of the excitation light and convert the excitation light into the stimulated light having a different wavelength. The excitation light may be light emitted by a solid-state light source, such as LED light, laser diode light, laser light, or any other light source light disclosed before the present application. Because the fluorescent ceramic layer 220 is of a ceramic structure, the thermal stability and the heat conductivity of the fluorescent ceramic layer are far superior to those of a fluorescent powder layer which takes glass or silica gel as a matrix (namely, the fluorescent powder is packaged in continuous glass or silica gel), the fluorescent ceramic layer can bear the irradiation of high-power exciting light, and the fluorescent ceramic layer can be suitable for the field of high-brightness laser fluorescent lighting/display.
The fluorescent ceramic layer may be a pure-phase fluorescent ceramic, in particular, various oxide, nitride or oxynitride ceramics, such as pure-phase YAG or YAG-Al2O3The PIA luminescent ceramic forms a luminescent center by doping a trace of activator element (such as lanthanide) in the preparation process of the ceramic. Because the doping amount of general activator elements is small (generally less than 1%), the fluorescent ceramics are usually transparent or semitransparent luminescent ceramics, and excitation light easily and directly passes through the luminescent ceramic layer and then is emitted, so that the luminescent efficiency of the fluorescent ceramic layer is not high, and the fluorescent ceramic layer is more suitable for excitation light application scenes with lower power. In one embodiment of the invention, the fluorescent ceramic layer is a Ce-doped YAG ceramic; in another embodiment of the present invention, the phosphor layer is a Ce doped LuAG ceramic.
The phosphor ceramic layer may also be a composite ceramic layer having a transparent/translucent ceramic as a matrix with luminescent ceramic particles (e.g., phosphor particles) distributed within the ceramic matrix. The transparent/translucent ceramic matrix can be a variety of oxide ceramics (e.g., alumina ceramics, Y)3Al5O12Ceramics), nitride ceramics (such as aluminum nitride ceramics) or oxynitride ceramics, the ceramic matrix being operative to conduct light and heat such that excitation light is incident on the luminescent ceramic particles and stimulated light is emitted from the luminescent ceramic layer; the luminescent ceramic particles assume the main luminescent function of the luminescent ceramic layer for absorbing the excitation light and converting it into stimulated light. The luminescent ceramic particles have a larger grain size and a larger doping amount of the activator element (e.g., a larger doping amount of the activator element)1% -5%), so that the luminous efficiency is high; and the luminescent ceramic particles are dispersed in the ceramic substrate, so that the condition that the luminescent ceramic particles positioned at the deeper position of the luminescent ceramic layer cannot be irradiated by exciting light is avoided, and the condition that the pure-phase fluorescent ceramic is poisoned by the concentration of the activator element due to the large integral doping amount of the pure-phase fluorescent ceramic is also avoided, thereby improving the luminous efficiency of the fluorescent ceramic layer.
Further, the fluorescent ceramic layer may be another composite ceramic layer, which is different from the above composite ceramic layer only in the ceramic matrix. In the present embodiment, the ceramic matrix is a phase-pure fluorescent ceramic, that is, the ceramic matrix itself has an activator and can emit excited light under irradiation of excitation light. The technical scheme integrates the advantages of high luminous efficiency of the luminescent ceramic particles of the composite ceramic layer and the advantages of luminous performance of the pure-phase fluorescent ceramic, and utilizes the luminescent ceramic particles and the ceramic substrate to emit light, so that the luminous efficiency of the fluorescent ceramic layer is further improved. In the luminescent ceramic layer, scattering particles or pores can also be added to enhance the internal scattering of the luminescent ceramic layer.
The invention replaces the traditional glass ceramic by the fluorescent ceramic material, such as fluorescent ceramic Al2O3-YAG-MgO-Y2O3In the process, the thermal conductivity can reach 20W/m.k-30W/m.k, the thermal conductivity is improved by one order of magnitude compared with that of glass ceramics, and the performance of the luminescent layer is greatly improved. The specific structure of the fluorescent ceramic layer 220 is not limited in the present invention, and may be a circular ring, a complete circular ring formed by splicing a plurality of circular ring segments, a circular ring formed by splicing a plurality of different types of luminescent ceramics, or a circular ring formed by splicing luminescent ceramics of different colors. Preferably, the thickness of the fluorescent ceramic layer 220 is 80 μm to 300. mu.m.
In the present invention, since the inorganic diffuse reflection layer 210 needs to be sintered and molded, and a general sintering temperature is between 700 ℃ and 1000 ℃, since the substrate 110 is easily denatured at this temperature, the inorganic diffuse reflection layer cannot be directly sintered on the substrate 110. The inorganic diffuse reflection layer 210 and the phosphor ceramic layer 220 are first tightly bonded by sintering. The phosphor ceramic layer 220 sintered with the inorganic diffuse reflection layer 210 is then bonded to the substrate 110 by the adhesive layer 500. The adhesive layer 500 is preferably heat conductive silica gel or heat conductive silver adhesive, and the thickness of the adhesive layer is less than 5 μm.
Because the thermal expansion coefficients of the inorganic diffuse reflection layer 210 and the fluorescent ceramic layer 220 are greatly different from the thermal expansion coefficient of the metal or metal alloy substrate 110 (heat conduction metal substrate), after the inorganic diffuse reflection layer and the fluorescent ceramic layer are bonded together, along with the temperature change, the deformation of the inorganic diffuse reflection layer and the fluorescent ceramic layer are different, and the stress crack or the adhesive layer is pulled off due to the thermal expansion coefficient difference, so that the whole body is easy to fall off. To solve the above problem, a ceramic substrate 400 may be further disposed between the substrate 110 and the inorganic diffuse reflection layer 210. The ceramic substrate 400 and the substrate 110 may be connected by gluing or welding (not shown). The inorganic diffuse reflection layer 210 and the ceramic substrate 400 are bonded by an adhesive layer (not shown).
The shape of the ceramic substrate 400 is not limited in the present invention, and may correspond to the shape of the phosphor ceramic layer 220, such as a circular ring, or the shape of the substrate 110, such as a circular disk. Further, the ceramic substrate 400 may not be a whole, and may be formed by splicing a plurality of circular ring segments or sectors.
Preferably, the thickness of the ceramic substrate 400 is 500 μm to 3mm, and the ceramic substrate 400 is easily deformed when the thickness is too thin and has a large weight when the thickness is too thick, which affects the rotational speed and the service life of the driving device 300.
The ceramic substrate 400 may be a sapphire substrate, an AlN substrate, or Si3N4Substrates, SiC substrates, both of which are ceramic plates having a dense structure and do not have a porous structure, have a thermal conductivity of 80W/m · k or more and a melting point of substantially 2000 ℃ or more, and therefore they can withstand higher temperatures while achieving thermal conductivity. Of course, in the case of a ceramic substrateIn applications where the thermal conductivity requirements are not very high, the ceramic substrate may be made of other types of ceramic materials.
Since the inorganic diffuse reflection layer 210 is sintered on the surface of the fluorescent ceramic layer 220, the thickness uniformity of the inorganic diffuse reflection layer 210 and the stress during sintering affect the inorganic diffuse reflection layer, and the inorganic diffuse reflection layer 210 is thin and is easily pulled and bent by the stress, the surface of the finally obtained inorganic diffuse reflection layer 210 is uneven, an unbonded area is easily formed between the inorganic diffuse reflection layer 210 and the fluorescent ceramic layer 220, and the reliability is not high enough.
When the ceramic substrate 400 is provided, the inorganic diffuse reflection layer 210 may be sintered on the ceramic substrate 400 in order to avoid the above-mentioned weak bonding, and since the close bonding between the inorganic diffuse reflection layer 210 and the ceramic substrate 400 contributes more to the heat dissipation of the wavelength conversion device, the wavelength conversion device having such a structure has higher conversion efficiency and better heat dissipation. In addition, since the thickness of the ceramic substrate 400 is greater than that of the fluorescent ceramic layer 220, the inorganic diffuse reflection layer 210 is attached to the ceramic substrate 400, and thus, the shape and stress are not easily changed.
At this time, the inorganic diffuse reflection layer 210 and the fluorescent ceramic layer 220 may be connected by means of the adhesive layer 500. It should be added that, because the thicknesses of the inorganic diffuse reflection layer 210 and the adhesive layer are relatively thin, the heat generated by the phosphor layer 220 can be smoothly conducted to the substrate 110, and therefore, the influence of the heat dissipation performance of the inorganic diffuse reflection layer 210 and the adhesive layer 500 on the overall performance thereof is negligible.
The structure of the wavelength conversion device and the method for manufacturing the same will be described with reference to specific embodiments.
Example one
In this embodiment, Al is selected2O3Nanoparticles, YAG phosphor particles, MgO nanoparticles, Y2O3The nanoparticles make the fluorescent ceramic layer 220. Wherein, Al2O3The mass ratio of the nano particles to the YAG fluorescent powder particles is 1: 1-2: 1, and the MgO nano particles and the Y fluorescent powder particles are2O3The nano particles are sintering aids, and the two aids account for Al2O30.2 wt% to 2 wt% of the nanoparticles. Putting the mixed powder of the four materials into a graphite die, and sintering in a hot-pressing sintering furnace or a discharge plasma sintering furnace (SPS), wherein the sintering temperature is 1300-1600 ℃, and the sintering pressure is 30-80 Mpa, so as to obtain the fluorescent ceramic Al2O3-YAG-MgO-Y2O3Then, the fluorescent ceramic is sliced, thinned, ground flat and polished, and then cut into a circular slice by a laser cutting machine, preferably, the circular slice has a diameter of 50mm-80mm, and the circular slice is the fluorescent ceramic layer 220.
Selecting Al2O3Nanoparticles, TiO2The nano particles are used as white scattering particles, silicate glass powder particles are used as glass powder, the white scattering particles, the glass powder and an ethyl cellulose organic carrier are mixed into slurry, the slurry is printed on the fluorescent ceramic layer 220 by a screen printing method, the slurry is placed in a muffle furnace for sintering after being dried in a heating table or an oven, and the sintering temperature is 650-980 ℃ to obtain the fluorescent ceramic layer 220 with the inorganic diffuse reflection layer 210.
A layer of heat conductive silica gel (adhesive layer 500) is spin-coated on the surface of the substrate 110 not provided with the heat dissipation fins 120, and the thickness is controlled to be less than 10 μm. The phosphor ceramic layer 220 with the inorganic diffusive reflective layer 210 is laid flat on the thermally conductive silica gel with the inorganic diffusive reflective layer 210 facing down and the phosphor ceramic layer 220 facing up. Then, a soft rubber pad and a hard thick plate are covered on the fluorescent ceramic layer 220, downward pressure is applied to uniformly transmit the pressure to the inorganic diffuse reflection layer 210 and the fluorescent ceramic layer 220, the thickness of the adhesive layer 500 between the inorganic diffuse reflection layer 210 and the substrate 110 can be further reduced by the pressure, for example, the thickness can be less than 5 μm, and then the substrate is placed in an oven to be cured at 150 ℃.
Through the above steps, a fluorescent ceramic wavelength conversion device including a heat sink fin as shown in fig. 1 can be manufactured, and the wavelength conversion device includes, in order from top to bottom, a fluorescent ceramic layer 220, an inorganic diffuse reflection layer 210, an adhesive layer 500, a substrate 110, and heat sink fins 120.
Example two
In this embodiment, Al is selected2O3Nanoparticles, YAG phosphor particles, MgO nanoparticles, Y2O3The nanoparticles make the fluorescent ceramic layer 220. Wherein, Al2O3The mass ratio of the nano particles to the YAG fluorescent powder particles is 1: 1-2: 1, and the MgO nano particles and the Y fluorescent powder particles are2O3The nano particles are sintering aids, and the two aids account for Al2O30.2 wt% to 2 wt% of the nanoparticles. Putting the mixed powder of the four materials into a graphite die, and sintering in a hot-pressing sintering furnace or a discharge plasma sintering furnace (SPS), wherein the sintering temperature is 1300-1600 ℃, and the sintering pressure is 30-80 Mpa, so as to obtain the fluorescent ceramic Al2O3-YAG-MgO-Y2O3Then, the fluorescent ceramic is sliced, thinned, ground flat and polished, and then cut into a circular slice by a laser cutting machine, preferably, the circular slice has a diameter of 50mm-80mm, and the circular slice is the fluorescent ceramic layer 220.
Selecting Al2O3Nanoparticles, TiO2The nano particles are used as white scattering particles, silicate glass powder particles are used as glass powder, the white scattering particles, the glass powder and an ethyl cellulose organic carrier are mixed into slurry, the slurry is printed on the fluorescent ceramic layer 220 by a screen printing method, the slurry is placed in a muffle furnace for sintering after being dried in a heating table or an oven, and the sintering temperature is 650-980 ℃ to obtain the fluorescent ceramic layer 220 with the inorganic diffuse reflection layer 210.
An AlN substrate with high thermal conductivity is selected as the ceramic substrate 400, and the ceramic substrate 400 and the substrate 110 can be bonded and connected by gluing or welding. For example, a layer of thermally conductive silicone gel is spin-coated on the ceramic substrate 400, and the thickness is controlled to be 10 μm or less. The ceramic substrate 400 is laid flat on the substrate 110 so that the heat conductive silica gel is sandwiched therebetween, and then a layer of soft rubber mat and a layer of hard thick plate are covered on the ceramic substrate 400, and downward pressure is applied to uniformly transmit the pressure to the ceramic substrate 400, so that the thickness of the heat conductive silica gel between the ceramic substrate 400 and the substrate 110 can be further reduced by the pressure, for example, the thickness can be less than 5 μm, and then the ceramic substrate is placed in an oven to be cured at 150 ℃. Alternatively, the surface of the ceramic substrate 400 facing the substrate 110 is subjected to surface metallization, such as copper plating or plating, and then soldered with gold-tin or silver-tin solder.
Then, a layer of heat-conducting silica gel (adhesive layer 500) is spin-coated on the surface of the ceramic substrate 400 far away from the substrate 110, and the thickness is controlled to be less than 10 μm. The phosphor ceramic layer 220 with the inorganic diffusive reflective layer 210 is laid flat on the thermally conductive silica gel with the inorganic diffusive reflective layer 210 facing down and the phosphor ceramic layer 220 facing up. Then, a soft rubber pad and a hard thick plate are covered on the fluorescent ceramic layer 220, downward pressure is applied to uniformly transmit the pressure to the inorganic diffuse reflection layer 210 and the fluorescent ceramic layer 220, the thickness of the adhesive layer 500 between the inorganic diffuse reflection layer 210 and the ceramic substrate 400 can be further reduced by the pressure, for example, the thickness can be less than 5 μm, and then the ceramic substrate is placed in an oven to be cured at 150 ℃.
Through the above steps, a fluorescent ceramic wavelength conversion device containing a heat dissipation fin can be manufactured, and the wavelength conversion device sequentially comprises a fluorescent ceramic layer 220, an inorganic diffuse reflection layer 210, an adhesive layer 500, a ceramic substrate 400, a substrate 110 and a heat dissipation fin 120 from top to bottom.
In the above embodiment, the inorganic diffuse reflection layer 210 is printed and sintered on the phosphor layer 220, but the inorganic diffuse reflection layer 210 is thin and is easily bent by stress, so that the surface of the finally obtained inorganic diffuse reflection layer 210 is uneven, and an unbonded area is easily formed between the inorganic diffuse reflection layer 210 and the phosphor layer 220, which is not high enough in reliability. In order to solve the above problems, the present invention improves the above embodiments, and specifically, after obtaining the fluorescent ceramic layer 220, an AlN substrate with high thermal conductivity is selected as the ceramic substrate 400, and Al is selected as the ceramic substrate2O3Nanoparticles, TiO2The nano particles are used as white scattering particles, silicate glass powder particles are used as glass powder, and the white scattering particles and the glass are mixedMixing the powder and the ethyl cellulose organic carrier into slurry, printing the slurry on the ceramic substrate 400 by adopting a screen printing method, drying the slurry in a heating table or an oven, and then putting the dried slurry into a muffle furnace for sintering at the sintering temperature of 650-980 ℃ to obtain the ceramic substrate 400 with the inorganic diffuse reflection layer 210, namely sintering the inorganic diffuse reflection layer 210 on the ceramic substrate 400 instead of the fluorescent ceramic layer 220.
The ceramic substrate 400 and the substrate 110 may be adhesively connected by gluing or welding. After the ceramic substrate 400 and the substrate 110 are bonded, a layer of thermally conductive silica gel is spin-coated on the inorganic diffuse reflection layer 210, and the thickness is controlled to be less than 10 μm. The fluorescent ceramic layer 220 is laid on the heat-conducting silica gel, then a soft rubber pad and a hard thick plate are covered on the fluorescent ceramic layer 220, downward pressure is applied to enable the pressure to be uniformly transmitted to the fluorescent ceramic layer 220, the thickness of the heat-conducting silica gel between the inorganic diffuse reflection layer 210 and the fluorescent ceramic layer 220 can be further reduced through the pressure, for example, the thickness can be smaller than 5 micrometers, and then the heat-conducting silica gel is placed in an oven to be cured at 150 ℃.
Through the above steps, a fluorescent ceramic wavelength conversion device including a ceramic substrate as shown in fig. 2 can be manufactured, and the wavelength conversion device includes, in order from top to bottom, a fluorescent ceramic layer 220, an adhesive layer 500, an inorganic diffuse reflection layer 210, a ceramic substrate 400, a substrate 110, and heat dissipation fins 120.
Compared with the first embodiment, the modified embodiment comprises the AlN substrate with high thermal conductivity, a good thermal conductive transition structure is formed because the thermal expansion coefficient of the AlN substrate is close to that of the fluorescent ceramic layer and the inorganic diffuse reflection layer, and because the thickness of the ceramic substrate 400 is greater than that of the fluorescent ceramic layer 220, the inorganic diffuse reflection layer 210 is attached to the ceramic substrate 400 and is not easy to cause changes in shape and stress, and the heat dissipation performance of the wavelength conversion device is greatly improved by combining the arranged heat dissipation fins, so that the fluorescent ceramic layer, the inorganic diffuse reflection layer, the ceramic substrate and the substrate are firmly combined, and the reliability is high.
The invention also provides a light source comprising an excitation light emitting device and a wavelength conversion device as described above, wherein the excitation light emitting device is an incident light source of the wavelength conversion device and is capable of emitting light such as LED light, laser diode light, laser light or other types of light source light in the prior art.
In summary, the invention effectively improves the heat dissipation effect of the wavelength conversion device by arranging the fluorescent ceramic layer and the heat dissipation fins, ensures the tight combination among a plurality of components by the adhesive layer, reduces the stress crack phenomenon caused by the difference of the thermal expansion coefficients by arranging the ceramic substrate, and improves the reliability and the service life of the wavelength conversion device.
Claims (10)
1. A wavelength conversion device, characterized in that the wavelength conversion device comprises:
a substrate (110); and
a phosphor ceramic layer (220) for absorbing excitation light and emitting stimulated light having a wavelength different from the excitation light;
wherein an inorganic diffuse reflection layer (210) and an adhesive layer (500) are laminated between the substrate and the fluorescent ceramic layer, and the inorganic diffuse reflection layer is used for reflecting the excited light and part of unconverted excited light.
2. The wavelength conversion device according to claim 1, wherein the inorganic diffusive reflective layer (210) comprises white scattering particles and glass frit bonding the white scattering particles.
3. The wavelength conversion device according to claim 2, wherein the white scattering particles are Al2O3、TiO2、AlN、MgO、BN、ZnO、ZrO2And BaSO4One or more of them.
4. The wavelength conversion device according to claim 1, wherein the material of the fluorescent ceramic layer (220) is a pure phase fluorescent ceramic or a composite ceramic.
5. The wavelength conversion device according to claim 1, wherein the inorganic diffuse reflective layer (210) and the phosphor ceramic layer (220) are bonded by sintering, and the inorganic diffuse reflective layer and the substrate (110) are bonded by an adhesive layer (500).
6. The wavelength conversion device according to claim 1, wherein a ceramic substrate (400) is arranged between the substrate (110) and the inorganic diffuse reflecting layer (210), wherein the substrate is a thermally conductive metal substrate.
7. The wavelength conversion device according to claim 6, wherein the ceramic substrate (400) and the substrate (110) are bonded by gluing or welding; the ceramic substrate is bonded with the inorganic diffuse reflection layer (210) through sintering, and the inorganic diffuse reflection layer is bonded with the fluorescent ceramic layer (220) through an adhesive layer (500); or,
the fluorescent ceramic layer and the inorganic diffuse reflection layer are bonded through sintering, and the inorganic diffuse reflection layer is bonded with the ceramic substrate through an adhesive layer.
8. The wavelength conversion device according to claim 1, wherein the ceramic substrate (400) has a thickness of 500 μm to 3mm, the inorganic diffuse reflective layer (210) has a thickness of 50 μm to 150 μm, and the phosphor ceramic layer (220) has a thickness of 80 μm to 300 μm.
9. The wavelength conversion device according to claim 1, wherein a side of the substrate (110) remote from the phosphor ceramic layer (220) is provided with heat sink fins (120).
10. A light source comprising an excitation light emitting device and a wavelength conversion device according to any one of claims 1 to 9, the excitation light emitting device being an incident light source of the wavelength conversion device.
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| CN201810021726.1A CN110017434A (en) | 2018-01-10 | 2018-01-10 | Wavelength converter and its light source |
| PCT/CN2018/080879 WO2019136831A1 (en) | 2018-01-10 | 2018-03-28 | Wavelength conversion apparatus and light source therefor |
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| CN112599575A (en) * | 2020-12-10 | 2021-04-02 | 北京维信诺科技有限公司 | Display panel, preparation method thereof and display device |
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