CN109768125A - Silicon substrate epitaxial wafer growth method - Google Patents
Silicon substrate epitaxial wafer growth method Download PDFInfo
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- CN109768125A CN109768125A CN201811638891.8A CN201811638891A CN109768125A CN 109768125 A CN109768125 A CN 109768125A CN 201811638891 A CN201811638891 A CN 201811638891A CN 109768125 A CN109768125 A CN 109768125A
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- silicon substrate
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Abstract
The present invention provides a kind of silicon substrate epitaxial wafer growth methods, comprising: silicon substrate is placed in PVD AlN sputtering machine table, sputters the AlN film of one layer of preset thickness in surface of silicon；The silicon substrate that sputtering has AlN film is placed in MOCVD board, is toasted on a preset condition based；In MOCVD board, successively in AlN film surface growing AIN transition zone, AlGaN buffer layer, uGaN layers, nGaN layers, InGaN stress modulation layer, mqw layer, electronic barrier layer, PGaN layers and ohmic contact layer, obtain silicon substrate epitaxial wafer, it effectively improves the technology stability of MOCVD board growth silicon substrate epitaxial wafer, it obtains avoiding while normal epitaxial wafer because of the process variations that the deviation between different MOCVD boards occurs, debugging efforts are reduced, production stability, management easy to produce are increased.
Description
Technical field
The present invention relates to technical field of semiconductors, especially a kind of silicon substrate epitaxial wafer silicon substrate epitaxial wafer growth method.
Background technique
When growing silicon substrate epitaxial wafer in MOCVD device, conventional epitaxial structure is as shown in Figure 1, first in surface of silicon
Growing AIN/AlGaN transition zone (including AlN buffer layer, AlN stressor layers and the AlGaN buffer layer in diagram), regrowth uGaN
Layer and nGaN layers, the growth pattern of AlN buffer layer and AlN stressor layers have been largely fixed face crack and GaN/AlN
Crystal quality is horizontal, while will affect the result and device performance of luminescence generated by light.
In batch production, the silicon substrate epitaxial wafer that can grow high quality is not required nothing more than, while to guarantee that it is repeated and steady
It is qualitative.It is right when handling silicon substrate and AlN pregrown during using MOCVD growing AIN buffer layer and AlN stressor layers
Process control needs are extremely harsh, and the variation of air-flow caused by small variation, temperature can all cause in MOCVD device reaction chamber
Epitaxial wafer goes wrong, such as variation of cracked, GaN/AlN crystal quality, wavelength uniformity variation.In previous production
In, similar problem needs occur, rule of thumb adjusting process, different MOCVD device adjustment modes and amplitude have differences,
Production management difficulty is caused to increase, product stability is deteriorated, and needs to expand the process window of silicon epitaxy in a hurry.
Summary of the invention
In order to overcome the above deficiency, the present invention provides a kind of silicon substrate epitaxial wafer growth methods, effectively the solution prior art
The poor technical problem of product stability caused by silicon substrate epitaxial wafer is grown in MOCVD board.
Technical solution provided by the invention includes:
A kind of silicon substrate epitaxial wafer growth method, comprising:
Silicon substrate is placed in PVD AlN sputtering machine table, sputters the AlN of one layer of preset thickness in the surface of silicon
Film；
The silicon substrate that sputtering has AlN film is placed in MOCVD board, is toasted on a preset condition based；
In the MOCVD board, successively in the AlN film surface growing AIN transition zone, AlGaN buffer layer, uGaN
Layer, nGaN layers, InGaN stress modulation layer, mqw layer, electronic barrier layer, PGaN layers and ohmic contact layer, obtain silicon substrate epitaxial wafer.
It is further preferred that the thickness range of the AlN film of sputtering is 10~100nm in the PVD AlN sputtering machine table
(nanometer).
It is further preferred that sputtering has the baking condition of the silicon substrate of AlN film are as follows: temperature model in the MOCVD board
1100~1180 DEG C are enclosed, 1~15min of time range (minute).
It is further preferred that the thickness range of the AlN transition zone is 50~500nm.
It is further preferred that the thickness range of the AlGaN buffer layer is 500~1500nm, Al compositional range is 0.05
~0.25.
Silicon substrate epitaxial wafer growth method provided by the invention pre-processes silicon substrate in PVD AlN sputtering machine table
Operation, sputtering obtain AlN film, place into MOCVD board and grow epitaxial wafer, effectively improve outside MOCVD board growth silicon substrate
The technology stability for prolonging piece obtains avoiding while normal epitaxial wafer because of the work that the deviation between different MOCVD boards occurs
Skill difference reduces debugging efforts, increases production stability, management easy to produce.
Detailed description of the invention
Fig. 1 is silicon substrate epitaxial slice structure schematic diagram；
Fig. 2 is silicon substrate epitaxial wafer growth method flow diagram in the present invention.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
When based on handling silicon substrate and AlN pregrown in the prior art, in MOCVD device, small variation in reaction chamber
The variation of caused air-flow, temperature can all cause epitaxial wafer to go wrong, such as cracked, XRD variation, wavelength STD variation, into
And the technical issues of causing the increase of production management difficulty, product stability to be deteriorated.A kind of silicon substrate epitaxial wafer is proposed in the present invention
Growing method, as shown in Fig. 2, including: in the silicon substrate epitaxial wafer growth method
Silicon substrate is placed in PVD AlN sputtering machine table by S1, sputters the AlN film of one layer of preset thickness in surface of silicon；
The silicon substrate that sputtering has AlN film is placed in MOCVD board by S2, is toasted on a preset condition based；
S3 is in MOCVD board, successively in AlN film surface growing AIN transition zone, AlGaN buffer layer, uGaN layers, nGaN
Layer, InGaN stress modulation layer, mqw layer, electronic barrier layer, PGaN layers and ohmic contact layer, obtain silicon substrate epitaxial wafer.
Specifically, in PVD AlN sputtering machine table, the thickness range of the AlN film of sputtering is 10~100nm.AlN will have been sputtered
After the silicon substrate of film is put into MOCVD board, condition that it is toasted are as follows: 1100~1180 DEG C of temperature range, time range 1
~15min.After having toasted, according to the process for growing epitaxial wafer in normal MOCVD board, successively in AlN film surface growing AIN
Transition zone, AlGaN buffer layer, uGaN layers, nGaN layers, InGaN stress modulation layer, mqw layer, electronic barrier layer, pGaN layers and Europe
Nurse contact layer obtains silicon substrate epitaxial wafer, wherein the thickness range of AlN transition zone (including AlN buffer layer and AlN stressor layers) is
The thickness range of 50~500nm, AlGaN buffer layer is 500~1500nm, and Al compositional range is 0.05~0.25.
During growing epitaxial wafer in MOCVD board, using high-purity N2Or high-purity H2Or high-purity H2/ high-purity N2Mixing
Gas is as carrier gas, high-purity N H3As the source N, metal organic source trimethyl gallium (TMGa), triethyl-gallium (TEGa) are used as gallium source,
Trimethyl indium (TMIn) is used as indium source, and n-type dopant is silane (SiH4), p-type dopant is two luxuriant magnesium (Cp2Mg)。
Embodiment 1
1. the silicon substrate of (111) crystal orientation is put into PVD AlN sputtering machine table, 40nm thickness is sputtered at a temperature of 600 DEG C
AlN film layer；
2. the silicon substrate for having sputtered AlN film is put into the reaction chamber of MOCVD board, it is warming up to 1150 DEG C and it is toasted
10min；
3. being cooled to 1100 DEG C, growth thickness is the AlN transition zone of 500nm, TMAl flow in MOCVD board
350ml/min；
4. at the same temperature, growing the AlGaN transition zone of 1000nm thickness, Al group is divided into 15%；TMAl flow
240ml/min, TMGa flow 180ml/min；
5. temperature is down to 1020 DEG C, the uGaN layer that growth thickness is 1 μm, TMGa flow is 300ml/min；
6. temperature is increased to 1090 DEG C, the nGaN layer that growth thickness is 2 μm, wherein TMGa flow is 440ml/min,
SIH4Flow is 80ml/min；
7. temperature is down to 800-900 DEG C, InGaN transition zone and 6 InGaN luminescent layers are grown, overall thickness is 0.25 μm,
In, TEGa flow is 400ml/min, and TMIn flow is 350ml/min；
8. temperature is increased to 950 DEG C, the p-type GaN layer of 0.15 μ m-thick is grown, TMGa flow is 60ml/min；
9 anneal epitaxial wafer 20min under 500~700 DEG C of nitrogen atmosphere.
It is measured, the epitaxial wafer PL parameter and apparent parameter being prepared are normal.
Embodiment 2
1. the silicon substrate of (111) crystal orientation is put into PVD AlN sputtering machine table, 60nm thickness is sputtered at a temperature of 600 DEG C
AlN film layer；
2. the silicon substrate for having sputtered AlN film is put into the reaction chamber of MOCVD board, it is warming up to 1150 DEG C and it is toasted
15min；
3. being cooled to 1100 DEG C, growth thickness is the AlN transition zone of 450nm in MOCVD board；TMAl flow
350ml/min；
4. at the same temperature, growing the AlGaN transition zone of 1000nm thickness, Al group is divided into 15%；TMAl flow
240ml/min, TMGa flow 180ml/min.
5. temperature is down to 1020 DEG C, the uGaN layer that growth thickness is 1 μm, TMGa flow is 300ml/min；
6. temperature is increased to 1090 DEG C, the nGaN layer that growth thickness is 2 μm, wherein TMGa flow is 440ml/min,
SIH4 flow is 80ml/min.μm
7. temperature is down to 800~900 DEG C, InGaN transition zone and 6 InGaN luminescent layers are grown, 0.25 μm of overall thickness,
In, TEGa flow is 400ml/min, and TMIn flow is 350ml/min.
8. temperature is increased to 950 DEG C, the p-type GaN layer of 0.15 μ m-thick is grown, TMGa flow is 60ml/min.
9 finally anneal epitaxial wafer 20min under 500~700 DEG C of nitrogen atmosphere.
It is measured, the epitaxial wafer PL parameter and apparent parameter being prepared are normal.
It should be noted that above-described embodiment can be freely combined as needed.The above is only of the invention preferred
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (5)
1. a kind of silicon substrate epitaxial wafer growth method characterized by comprising
Silicon substrate is placed in PVD AlN sputtering machine table, sputters the AlN film of one layer of preset thickness in the surface of silicon；
The silicon substrate that sputtering has AlN film is placed in MOCVD board, is toasted on a preset condition based；
In the MOCVD board, successively the AlN film surface growing AIN transition zone, AlGaN buffer layer, uGaN layers,
NGaN layers, InGaN stress modulation layer, mqw layer, electronic barrier layer, PGaN layers and ohmic contact layer, obtain silicon substrate epitaxial wafer.
2. silicon substrate epitaxial wafer growth method as described in claim 1, which is characterized in that in the PVD AlN sputtering machine table,
The thickness range of the AlN film of sputtering is 10~100nm.
3. silicon substrate epitaxial wafer growth method as described in claim 1, which is characterized in that in the MOCVD board, sputtering has
The baking condition of the silicon substrate of AlN film are as follows: 1100~1180 DEG C of temperature range, 1~15min of time range.
4. silicon substrate epitaxial wafer growth method as claimed in any one of claims 1-3, which is characterized in that the AlN transition zone
Thickness range be 50~500nm.
5. silicon substrate epitaxial wafer growth method as claimed in any one of claims 1-3, which is characterized in that the AlGaN buffering
The thickness range of layer is 500~1500nm, and Al compositional range is 0.05~0.25.
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Application publication date: 20190517 |