CN109687116B - C-band miniaturized broadband wide-beam circularly polarized microstrip antenna - Google Patents
C-band miniaturized broadband wide-beam circularly polarized microstrip antenna Download PDFInfo
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- CN109687116B CN109687116B CN201910105110.7A CN201910105110A CN109687116B CN 109687116 B CN109687116 B CN 109687116B CN 201910105110 A CN201910105110 A CN 201910105110A CN 109687116 B CN109687116 B CN 109687116B
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- 239000002184 metal Substances 0.000 claims abstract description 206
- 230000003071 parasitic effect Effects 0.000 claims abstract description 89
- 230000005855 radiation Effects 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims description 135
- 239000002609 medium Substances 0.000 claims description 38
- 239000000523 sample Substances 0.000 claims description 10
- 238000005452 bending Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000012526 feed medium Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 abstract description 4
- 230000005404 monopole Effects 0.000 abstract description 3
- 238000004891 communication Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000003491 array Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 208000026817 47,XYY syndrome Diseases 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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Abstract
The invention discloses a miniaturized broadband wide-beam circularly polarized microstrip antenna of a C wave band, which consists of a dielectric cavity layer, a parasitic layer, a connecting layer, a radiation layer and a feed layer which are sequentially stacked and attached from top to bottom. Circular polarization is realized through double-point feed, and a feed network adopts Wilkinson power dividers with equal amplitudes and 90-degree phase difference. The radiation of the grounded metal pillar is similar to that of a monopole antenna, the radiation pattern of the grounded metal pillar is omnidirectional, and the loaded metal pillar widens the half-power beam width of the microstrip antenna. The square ring generates a horizontally polarized electric field to balance the vertical polarized electric field added by the metal column, and improves the axial ratio performance of the antenna while expanding the beam width. By introducing the laminated structure of the parasitic patch, the impedance bandwidth of the antenna is expanded, and the parasitic patch is subjected to arc chamfering, so that the axial ratio bandwidth and the 3dB axial ratio beam width of the antenna are further improved.
Description
Technical Field
The invention relates to the technical field of antennas, in particular to a miniaturized broadband wide-beam circularly polarized microstrip antenna in a C wave band.
Background
In recent years, with the rapid development of communication technology, miniaturized circularly polarized microstrip antennas with wide bandwidth beams are favored by many researchers. This is because microstrip antennas have a series of outstanding advantages of small size, light weight, and low cost. Circular polarization has strong anti-rain fog and anti-multipath interference capability, and can meet the strict requirements of antennas in the radio fields of radar, remote sensing, satellite communication, radio frequency identification, electronic countermeasure and the like. The wide frequency band can provide a thick spectrum resource for the communication system, and the wide beam can cover a very wide space range, so that the gain of a low elevation angle area is greatly improved. Antennas with wide beam characteristics are often required as array elements in a large angle scanning phased array.
Typically, the 3dB beamwidth of the microstrip antenna is only about 80 °, which is difficult to meet some requirements that require a large angle beam coverage scenario, such as vehicle radar, base station communication, satellite communication, and the like. At present, a series of achievements are obtained by researching the wide-beam circularly polarized antenna at home and abroad. In 2015, nasimuddin et al published a paper titled "Awide-beam circularly polarized asymmetric-microstrip antenna" on IEEE Transactions on Antennas and Propagation, which discloses a microstrip antenna, and circular patches with different radii are respectively loaded on four corners of a rectangular radiating patch to realize circular polarization. The size of the antenna is only 0.373 lambda 0 ×0.373λ 0 ×0.016λ 0 The 3dB axial ratio beam width reaches 180 °, but the axial ratio bandwidth is very narrow, only 1.5%, and the half power beam width is not widened. 2016 Wen Ya Qing et al IEEE International Symposium onAntennas&The paper Low profile circularly-polarized microstripcrossed antenna with wide beamwidth is published by Propanation, which discloses a wide-beam circularly polarized microstrip antenna composed of magnetic electric dipoles, wherein the 3dB beam width of E face and H face reaches 134 degrees, the 3dB axis ratio beam width reaches 135 degrees, but the working bandwidth is very narrow, only 50MHz, and the relative bandThe width is only 0.88%, and it is difficult to satisfy the requirement of broadband communication. 2017, wei Jia et al published paper "Ultra Wideband and High GainCircularly Polarized Antenna with Double-Y-Shape Slot" on IEEE Antennasand Wireless Propagation Letters, which devised a dual Y Slot fed microstrip antenna having a size of 0.47 lambda 0 ×0.47λ 0 ×0.28λ 0 The impedance bandwidth is 71%, the 3dB axial ratio bandwidth is 49.8%, but the half power beam width and the 3dB axial ratio beam width of the antenna are not widened, and the section is high. The Chinese patent application with publication No. CN102904009A discloses a small wide bandwidth beam circularly polarized microstrip antenna which consists of four short-circuit patches which are sequentially rotated by 90 degrees and a quarter feed network, wherein the covered frequency range is 1.4-1.7GHz, the relative impedance bandwidth is 19.4%, the 3dB beam width is only about 100 degrees, and the 3dB axial ratio bandwidth is not given, so that the requirement of 5G communication is far not met. In short, the broadband, wide beam, and miniaturized characteristics of circularly polarized microstrip antennas are difficult to be satisfied at the same time.
Disclosure of Invention
Aiming at the problems that the existing circularly polarized microstrip antenna has narrower working frequency band, insufficient half-power beam width and 3dB beam width and is difficult to meet the requirements of wide communication frequency band and wide beam of a base station, the invention provides a miniaturized circularly polarized microstrip antenna with wide bandwidth and beam in the C band.
In order to solve the problems, the invention is realized by the following technical scheme:
the miniaturized broadband wide-beam circularly polarized microstrip antenna of the C wave band comprises a dielectric cavity layer, a parasitic layer, a connecting layer, a radiation layer and a feed layer; the dielectric cavity layer, the parasitic layer, the connecting layer, the radiating layer and the feed layer are sequentially stacked and attached from top to bottom, and the central lines of the layers are positioned on the same axis.
The dielectric cavity layer comprises a dielectric cavity layer dielectric substrate; the medium substrate of the medium cavity layer is square ring-shaped with square inner and outer rings; a plurality of through holes which are vertically communicated are formed in the edge of the dielectric substrate of the dielectric cavity layer, and the inner sides of all the through holes are coated with metal to form metal through holes of the dielectric cavity layer; the metal through holes of the dielectric cavity layer are regularly distributed at equal intervals on the edge of the dielectric substrate of the dielectric cavity layer and encircle to form a square.
The parasitic layer comprises a parasitic dielectric substrate and a parasitic metal patch; the parasitic dielectric substrate and the parasitic metal patch are square; the parasitic metal patch is printed on the upper surface of the parasitic dielectric substrate, and the central lines of the parasitic metal patch and the parasitic dielectric substrate are positioned on the same axis; the side length of the parasitic metal patch is smaller than that of the parasitic dielectric substrate; a plurality of through holes which are vertically communicated are formed in the edge of the parasitic dielectric substrate, and metal is coated on the inner sides of all the through holes to form parasitic metal through holes; the parasitic metal through holes are regularly arranged at equal intervals on the edge of the parasitic dielectric substrate and encircle to form a square.
The radiation layer comprises a radiation medium substrate, a radiation metal patch and a metal floor; the radiating dielectric substrate, the radiating metal patch and the metal floor are square, the radiating metal patch is printed on the upper surface of the parasitic dielectric substrate, and the metal floor is printed on the lower surface of the parasitic dielectric substrate; the side length of the radiation metal patch is smaller than that of the radiation medium substrate, and the side length of the metal floor is equal to that of the radiation medium substrate; a plurality of through holes which are vertically communicated are formed in the edge of the radiation medium substrate, and the inner sides of all the through holes are coated with metal to form radiation metal through holes; the radiation metal through holes are regularly arranged at equal intervals on the edge of the radiation medium substrate and encircle to form a square.
The connecting layer comprises a metal ring and a plurality of metal columns; the metal ring is square ring with both inner and outer rings being square; all the metal columns penetrate through the metal ring, are regularly arranged on the metal ring at equal intervals and encircle to form a square; the number of the metal through holes, the parasitic metal through holes, the radiating metal through holes and the metal columns of the dielectric cavity layer are equal, and the positions of the metal through holes, the parasitic metal through holes, the radiating metal through holes and the metal columns are opposite; the upper end of the metal column sequentially passes through the parasitic metal through hole and the metal through hole of the dielectric cavity layer and then is leveled with the upper surface of the dielectric substrate of the dielectric cavity layer; the lower ends of the metal posts penetrate through the radiation metal through holes, are leveled with the radiation medium substrate and are contacted with the upper surface of the metal wall.
The feed layer comprises a feed medium substrate, a metal wall, an SMA connector, a Wilkinson power divider patch, an isolation resistor and 2 feed probes; the metal wall is square ring with square inner and outer rings; the feeding medium substrate is square, the outer edge of the feeding medium substrate is just embedded in the inner ring of the metal wall, and the central lines of the feeding medium substrate and the feeding medium substrate are positioned on the same axis; the Wilkinson power divider patch consists of 2 metal bending lines printed on the lower surface of the feed dielectric substrate, and the length difference of the 2 metal bending lines is equal to lambda g1/4, wherein lambda g1 is the dielectric wavelength corresponding to the equivalent dielectric constant of the feed dielectric substrate; two ends of the isolation resistor are respectively connected to the nearest parts of the 2 metal bending lines; the SMA connector is arranged on one side wall of the metal wall in a penetrating way, the outer conductor of the SMA connector is connected with the metal wall, and the inner conductor of the metal wall is connected with the input port of the Wilkinson power divider patch; the bottom ends of the 2 feed probes are respectively and vertically arranged on 2 output ports of the Wilkinson power divider patch, and the upper ends of the 2 feed probes penetrate through the radiation medium substrate and are contacted with the radiation metal patch.
As improvement, four corners of the inner ring of the dielectric substrate of the dielectric cavity layer are round chamfer angles.
As an improvement, four corners of the parasitic metal patch are round chamfer angles.
As an improvement, four corners of the inner ring of the metal ring are round chamfer angles.
As an improvement, the thickness of the dielectric substrate of the dielectric cavity layer is larger than that of the parasitic dielectric substrate and that of the radiation dielectric substrate.
As improvement, the side length of the parasitic metal patch and the side length of the radiating metal patch are smaller than the side length of the inner ring of the dielectric substrate of the dielectric cavity layer.
As an improvement, a metal ring is printed at the edge of the upper surface of the radiation medium substrate.
As an improvement, the number of the metal through holes, the parasitic metal through holes, the radiating metal through holes and the metal posts of the dielectric cavity layer is 36.
As an improvement, the lower surface of the feeding medium substrate is leveled with the lower surface of the metal wall.
Compared with the prior art, the invention has the following characteristics:
1. circular polarization is realized through double-point feed, and a feed network adopts Wilkinson power dividers with equal amplitudes and 90-degree phase difference. The radiation of the grounded metal pillar is similar to that of a monopole antenna, the radiation pattern of the grounded metal pillar is omnidirectional, and the loaded metal pillar widens the half-power beam width of the microstrip antenna. The square ring generates a horizontally polarized electric field to balance the vertical polarized electric field added by the metal column, and improves the axial ratio performance of the antenna while expanding the beam width.
2. By introducing the laminated structure of the parasitic patch, the impedance bandwidth of the antenna is expanded, and the parasitic patch is subjected to arc chamfering, so that the axial ratio bandwidth and the 3dB axial ratio beam width of the antenna are further improved.
3. A dielectric substrate with a high dielectric constant is adopted to realize miniaturization of the antenna.
4. The impedance bandwidth of the antenna is 3.79-6.82 GHz, the relative impedance bandwidth is 62.8%, the 3dB axial ratio bandwidth is 4.02-5.85 Hz, the relative 3dB axial ratio bandwidth is 37.3%, the half-power beam width of the antenna reaches 110 DEG in the frequency band range of 4-5.8 GHz, and the 3dB axial ratio beam width is more than 146 DEG in the frequency band range of 4.3-5.5 GHz, wherein 208 DEG is reached at 4.9 GHz.
5. The antenna has a small volume and a size of 0.41 lambda 0 ×0.41λ 0 ×0.17λ 0 The method is suitable for the fields of phased arrays of large-angle scanning, all-directional coverage base station communication, satellite communication and the like.
Drawings
Fig. 1 is a structural development schematic diagram of a miniaturized broadband wide-beam circularly polarized microstrip antenna in the C-band.
Fig. 2 is a schematic structural diagram of a dielectric cavity layer of a C-band miniaturized broadband wide-beam circularly polarized microstrip antenna.
Fig. 3 is a schematic structural diagram of a parasitic layer of a C-band miniaturized broadband wide-beam circularly polarized microstrip antenna.
Fig. 4 is a schematic structural diagram of a connection layer of a C-section miniaturized broadband wide-beam circularly polarized microstrip antenna.
Fig. 5 is a schematic structural diagram of a radiation layer of a C-band miniaturized broadband wide-beam circularly polarized microstrip antenna.
Fig. 6 is a schematic structural diagram of a feed layer of a C-band miniaturized broadband wide-beam circularly polarized microstrip antenna.
FIG. 7 is an S-band miniaturized broadband wide-beam circularly polarized microstrip antenna 11 A curve.
Fig. 8 is an Axial Ratio (AR) curve of a C-band miniaturized broadband beam circularly polarized microstrip antenna.
Fig. 9 is a graph of the actual gain (realzedgain) of a C-band miniaturized broadband beam circularly polarized microstrip antenna.
Fig. 10 is a pattern of a C-band miniaturized broadband beam circularly polarized microstrip antenna at f=4.3 GHz.
Fig. 11 is a pattern of a C-band miniaturized broadband beam circularly polarized microstrip antenna at f=4.5 GHz.
Fig. 12 is a pattern of a C-section miniaturized broadband beam circularly polarized microstrip antenna at f=4.9 GHz.
Fig. 13 is a pattern of a C-section miniaturized broadband beam circularly polarized microstrip antenna at f=5.5 GHz.
Fig. 14 is an Axial Ratio (AR) beam width curve of a C-band miniaturized broadband beam circularly polarized microstrip antenna at f=4.3 GHz.
Fig. 15 is an Axial Ratio (AR) beam width curve at f=4.5 GHz for a C-band miniaturized broadband beam circularly polarized microstrip antenna.
Fig. 16 is an Axial Ratio (AR) beam width curve of a C-band miniaturized broadband beam circularly polarized microstrip antenna at f=4.9 GHz.
Fig. 17 is an Axial Ratio (AR) beam width curve of a C-band miniaturized broadband beam circularly polarized microstrip antenna at f=5.5 GHz.
Reference numerals in the drawings:
1. a dielectric cavity layer; 1-1, a dielectric cavity dielectric substrate; 1-2 metal vias;
2. a parasitic layer; 2-1, parasitic dielectric substrate; 2-2, metal through holes; 2-3, parasitic metal patches;
3. a connection layer; 3-1, a metal ring; 3-2, a metal column;
4. a radiation layer; 4-1, radiating a dielectric substrate; 4-2, metal through holes; 4-3, radiating a metal patch;
5. a feed layer; 5-1, feeding the probe; 5-2, a metal wall; 5-3, a Wilkinson power divider patch; 5-4, isolating resistance; 5-5, SMA joint; and 5-6, feeding the dielectric substrate.
Detailed Description
The invention will be further described in detail below with reference to specific examples and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the invention more apparent. In the examples, directional terms such as "upper", "lower", "middle", "left", "right", "front", "rear", and the like are merely directions with reference to the drawings. Accordingly, the directions of use are merely illustrative and not intended to limit the scope of the invention.
Referring to fig. 1, a miniaturized broadband wide-beam circularly polarized microstrip antenna of a C-band is composed of a dielectric cavity layer 1, a parasitic layer 2, a connection layer 3, a radiation layer 4 and a feed layer 5. The dielectric cavity layer 1, the parasitic layer 2, the connecting layer 3, the radiating layer 4 and the feed layer 5 are sequentially stacked from top to bottom and are attached to each other without gaps, and the central lines of the layers are positioned on the same axis.
Referring to fig. 2, a dielectric cavity layer 1 includes a dielectric cavity layer dielectric substrate 1-1. The dielectric substrate 1-1 of the dielectric cavity layer is square with square inner and outer rings. The size of the opening on the inner side of the dielectric substrate 1-1 of the dielectric cavity layer has a great influence on the impedance matching of the antenna, and in the embodiment, the outer ring side length W0 of the dielectric substrate 1-1 of the dielectric cavity layer is 25mm, and the inner ring side length W of the dielectric substrate 1-1 of the dielectric cavity layer is 14.5mm after optimization. Four corners of the inner ring of the dielectric substrate 1-1 of the dielectric cavity layer are subjected to arc chamfering treatment of 2mm so as to improve the axial ratio characteristic of the antenna and reduce the size of the antenna. A plurality of through holes which are penetrated up and down are formed at the edge of the dielectric cavity layer dielectric substrate 1-1, and the inner side of each through hole is coated with metal to form a dielectric cavity layer metal through hole 1-2. The metal through holes 1-2 of the dielectric cavity layer are regularly arranged at equal intervals and encircle to form a square. The loading medium cavity layer 1 effectively improves the impedance bandwidth of the antenna.
Referring to fig. 3, the parasitic layer 2 includes a parasitic dielectric substrate 2-1 and a parasitic metal patch 2-3. The parasitic metal patch 2-3 creates an additional resonance point that can effectively increase the impedance bandwidth of the antenna. The parasitic metal patch 2-3 is printed on the upper surface of the parasitic dielectric substrate 2-1, and the center lines of the parasitic metal patch and the parasitic dielectric substrate are positioned on the same axis. The parasitic dielectric substrate 2-1 and the parasitic metal patch 2-3 are square, and the side length Wj of the parasitic metal patch 2-3 is smaller than the side length W0 of the parasitic dielectric substrate 2-1 and smaller than the side length W surrounded by the inner ring of the dielectric cavity layer dielectric substrate 1-1. In this embodiment, the side length W0 of the parasitic dielectric substrate 2-1 is 25mm, and the side length Wj of the parasitic metal patch 2-3 is 13.5mm. The four corners of the parasitic metal patch 2-3 are subjected to arc chamfering treatment of 2mm so as to improve the axial ratio performance of the antenna. A plurality of through holes which are penetrated up and down are formed at the edge of the parasitic dielectric substrate 2-1, and the inner side of the through holes is coated with metal to form parasitic metal through holes 2-2. The parasitic metal through holes 2-2 are regularly arranged at equal intervals and are encircled to form a square.
Referring to fig. 4, the connection layer 3 includes a metal ring 3-1 and a number of metal posts 3-2. The metal ring 3-1 is square ring shape with both inner and outer rings being square. In this embodiment, the outer circumferential length W0 of the metal ring 3-1 is 25mm, and the inner circumferential length Wh is 20mm. The four corners of the inner ring of the metal shape are rounded with a radius of 1 mm. All the metal posts 3-2 are arranged in the metal ring 3-1 in a penetrating way, are regularly arranged on the metal ring 3-1 at equal intervals, and encircle to form a square. In the actual production process, the metal ring 3-1 is printed on the upper surface of the radiation medium substrate 4-1. The radiation of the metal column 3-2 is similar to that of a monopole antenna, the E of the radiation pattern of the metal column is 8-shaped, the H of the radiation pattern of the metal column is circular, the loading of the metal column 3-2 can expand half-power beam width of the antenna, and meanwhile, the loading of the metal ring 3-1 on a horizontal plane can balance the vector electric field of the vertical component added by the metal column 3-2, so that the axial ratio characteristic of the antenna is improved, and the beam width is expanded.
Referring to fig. 5, the radiation layer 4 includes a radiation dielectric substrate 4-1, radiation metal patches 4-3, and a metal floor. The radiation medium substrate 4-1, the radiation metal patch 4-3 and the metal floor are all square. The radiation metal patch 4-3 is printed on the upper surface of the parasitic dielectric substrate 2-1, and the metal floor is printed on the lower surface of the parasitic dielectric substrate 2-1. The side length Wf of the radiation metal patch 4-3 is smaller than the side length W0 of the radiation medium substrate 4-1 and smaller than the side length W surrounded by the inner ring of the medium cavity layer medium substrate 1-1. In this embodiment, the side length W0 of the radiation medium substrate 4-1 is 25mm, and the side length Wf of the radiation metal patch 4-3 is 13.5mm. The side length of the metal floor is equal to the side length of the radiation medium substrate 4-1. A plurality of through holes which are penetrated up and down are formed at the edge of the radiation medium substrate 4-1, and the inner side of the through holes is coated with metal to form radiation metal through holes 4-2. The radiation metal through holes 4-2 are regularly arranged at equal intervals and are surrounded to form a square.
Referring to fig. 6, the feeding layer 5 includes a feeding dielectric substrate 5-6, a metal wall 5-2, SMA tabs 5-5, wilkinson power divider patches 5-3, isolation resistors 5-4, and 2 feeding probes 5-1. The metal wall 5-2 is square annular with both inner and outer rings. The upper surface of the metal wall 5-2 is connected with the metal floor of the radiation layer 4. The outer length Wk of the metal wall 5-2 is smaller than the outer length W0 of the dielectric cavity layer dielectric substrate 1-1, the parasitic dielectric substrate 2-1, the connection dielectric substrate and the radiation dielectric substrate 4-1. In this embodiment, the outer length Wk of the metal wall 5-2 is 21mm, the inner length Wq is 16mm, and the thickness is 2.5mm. The feeding dielectric substrate 5-6 is square, and the feeding dielectric substrate 5-6 is embedded in the inner ring of the metal wall 5-2. In particular, the lower surface of the feed dielectric substrate 5-6 is flat with the lower surface of the metal wall 5-2, and the center lines of the metal wall 5-2 and the feed dielectric substrate 5-6 are on the same axis. The side length of the feed medium substrate 5-6 is equal to the inner ring side length of the metal wall 5-2. In the present embodiment, the side length Wq of the feeding dielectric substrate 5-6 is 16mm. The wilkinson power divider patch 5-3 is composed of 2 metal bending lines printed on the lower surface of the feed dielectric substrate 5-6. The difference in length of these 2 metal bend lines is equal to λg1/4, where λg1 is the dielectric wavelength corresponding to the equivalent dielectric constant of the feed dielectric substrate 5-6. The two ends of the isolation resistor 5-4 are respectively connected to the nearest parts of the 2 metal bending lines. The SMA connector 5-5 is arranged on one side wall of the metal wall 5-2 in a penetrating way, wherein an outer conductor of the SMA connector 5-5 is connected with the metal wall 5-2, and an inner conductor of the SMA connector 5-5 is connected with an input port of the Wilkinson power divider patch 5-3. The lower ends of the 2 feed probes 5-1 are respectively and vertically arranged on 2 output ports of the Wilkinson power divider patch 5-3. The upper ends of the 2 feed probes 5-1 all penetrate through the radiation dielectric substrate 4-1 and are contacted with the radiation metal patches 4-3. The magnitude of the output ports of the wilkinson power divider patches 5-3 are equal and the phase difference is 90 deg..
The thickness of the dielectric cavity layer dielectric substrate 1-1 is larger than that of the parasitic dielectric substrate 2-1 and that of the radiation dielectric substrate 4-1; and the sum of the thickness of the dielectric cavity layer dielectric substrate 1-1, the thickness of the parasitic dielectric substrate 2-1 and the thickness of the radiation dielectric substrate 4-1 is equal to lambdag 2/4, wherein lambdag 2 is the dielectric wavelength corresponding to the equivalent dielectric constants of the dielectric cavity layer dielectric substrate 1-1, the parasitic dielectric substrate 2-1 and the radiation dielectric substrate 4-1. In this embodiment, the dielectric cavity layer dielectric substrate 1-1 and the radiation dielectric substrate 4-1 are made of glass fiber epoxy (FR-4) materials, which have dielectric constants of 4.4 and loss tangents of 0.02. The thickness of the dielectric cavity layer dielectric substrate 1-1 is 4mm, and the thickness of the radiation dielectric substrate 4-1 is 1.6mm. The parasitic dielectric substrate 2-1 was made of polytetrafluoroethylene (F4B 265), and had a dielectric constant of 2.65, a loss tangent of 0.001, and a thickness of 2mm. The feed dielectric substrate 5-6 was made of polytetrafluoroethylene (F4B 350) material, had a dielectric constant of 3.5, a loss tangent of 0.001, and a thickness of 2.5mm.
The number of the metal through holes 1-2, the parasitic metal through holes 2-2, the radiating metal through holes 4-2 and the metal columns 3-2 are equal and the positions are opposite, so that the upper ends of the metal columns 3-2 can penetrate through the metal through holes 1-2 and the parasitic metal through holes 2-2 of the dielectric cavity layer and are level with the upper surface of the dielectric substrate 1-1 of the dielectric cavity layer; the lower ends of the metal posts 3-2 can pass through the radiation metal through holes 4-2, are flat with the radiation medium substrate 4-1, and are in contact with the upper surface of the metal wall 5-2. In this embodiment, the metal vias of each layer are arranged in a square shape at a distance of 0.8mm from each side of the dielectric substrate, and 9 metal vias with a radius of 0.4mm are arranged at equal intervals on each side, with a spacing d s Is a metal through hole of 2.5mm.
Fig. 7-17 are S-parameter curves, axial Ratio (AR) curves, actual gain (recovered gain) curves, frequency point patterns, and frequency point Axial Ratio (AR) beam width curves, respectively, for a miniaturized broadband wide-beam circularly polarized microstrip antenna of the embodiment of the present invention. The impedance bandwidth of the antenna is 3.79-6.82GHz, the relative impedance bandwidth is 62.8%, the 3dB axial ratio bandwidth is 4.02-5.85 GHz, the relative 3dB axial ratio bandwidth is 37.3%, the half-power beam width of the antenna reaches 110 degrees in the frequency band range of 4-5.8 GHz, and the maximum gain reaches 4.8dBi; in the frequency band range of 4.3-5.5 GHz, the 3dB axial ratio beamwidth is greater than 146 °, with 208 ° being reached at 4.9 GHz. The antenna has small volume, compact structure and easy installation. The size of the whole antenna is 0.41 lambda 0 ×0.41λ 0 ×0.17λ 0 Wherein lambda is 0 The method is suitable for the fields of phased arrays of large-angle scanning, all-around coverage base station communication, satellite communication and the like.
It should be noted that, although the examples described above are illustrative, this is not a limitation of the present invention, and thus the present invention is not limited to the above-described specific embodiments. Other embodiments, which are apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein, are considered to be within the scope of the invention as claimed.
Claims (7)
- The miniaturized broadband wide-beam circularly polarized microstrip antenna of the C wave band is characterized by comprising a dielectric cavity layer (1), a parasitic layer (2), a connecting layer (3), a radiation layer (4) and a feed layer (5); the dielectric cavity layer (1), the parasitic layer (2), the connecting layer (3), the radiation layer (4) and the feed layer (5) are sequentially stacked and attached from top to bottom, and the central lines of the layers are positioned on the same axis;the dielectric cavity layer (1) comprises a dielectric cavity layer dielectric substrate (1-1); the medium substrate (1-1) of the medium cavity layer is square ring with square inner and outer rings; a plurality of through holes which are penetrated up and down are formed at the edge of the dielectric substrate (1-1) of the dielectric cavity layer, and the inner sides of all the through holes are coated with metal to form metal through holes (1-2) of the dielectric cavity layer; the metal through holes (1-2) of the dielectric cavity layer are regularly distributed at equal intervals on the edge of the dielectric substrate (1-1) of the dielectric cavity layer and encircle the dielectric substrate to form a square;the parasitic layer (2) comprises a parasitic dielectric substrate (2-1) and a parasitic metal patch (2-3); the parasitic dielectric substrate (2-1) and the parasitic metal patch (2-3) are square; the parasitic metal patch (2-3) is printed on the upper surface of the parasitic dielectric substrate (2-1), and the central lines of the parasitic metal patch and the parasitic dielectric substrate are positioned on the same axis; the side length of the parasitic metal patch (2-3) is smaller than that of the parasitic dielectric substrate (2-1); a plurality of through holes which are vertically communicated are formed at the edge of the parasitic dielectric substrate (2-1), and the inner sides of all the through holes are coated with metal to form parasitic metal through holes (2-2); the parasitic metal through holes (2-2) are regularly arranged at equal intervals on the edge of the parasitic dielectric substrate (2-1) and encircle to form a square; four corners of the parasitic metal patch (2-3) are round chamfer angles;the radiation layer (4) comprises a radiation medium substrate (4-1), a radiation metal patch (4-3) and a metal floor; the radiation dielectric substrate (4-1), the radiation metal patch (4-3) and the metal floor are square, the radiation metal patch (4-3) is printed on the upper surface of the parasitic dielectric substrate (2-1), and the metal floor is printed on the lower surface of the parasitic dielectric substrate (2-1); the side length of the radiation metal patch (4-3) is smaller than the side length of the radiation medium substrate (4-1), and the side length of the metal floor is equal to the side length of the radiation medium substrate (4-1); a plurality of through holes which are vertically communicated are formed at the edge of the radiation medium substrate (4-1), and the inner sides of all the through holes are coated with metal to form radiation metal through holes (4-2); the radiation metal through holes (4-2) are regularly arranged at equal intervals on the edge of the radiation medium substrate (4-1) and encircle to form a square;the connecting layer (3) comprises a metal ring (3-1) and a plurality of metal columns (3-2); the metal ring (3-1) is square ring with both inner and outer rings square; all the metal columns (3-2) are arranged in the metal ring (3-1) in a penetrating way, are regularly arranged on the metal ring (3-1) at equal intervals and encircle to form a square; the metal through holes (1-2), the parasitic metal through holes (2-2), the radiating metal through holes (4-2) and the metal columns (3-2) of the dielectric cavity layer are equal in number and opposite in position; the upper end of the metal column (3-2) sequentially passes through the parasitic metal through hole (2-2) and the dielectric cavity layer metal through hole (1-2) and then is leveled with the upper surface of the dielectric cavity layer dielectric substrate (1-1); the lower end of the metal column (3-2) passes through the radiation metal through hole (4-2), is leveled with the radiation medium substrate (4-1) and is contacted with the upper surface of the metal wall (5-2); four corners of the inner ring of the metal ring (3-1) are round chamfer angles;the feed layer (5) comprises a feed medium substrate (5-6), a metal wall (5-2), an SMA connector (5-5), a Wilkinson power divider patch (5-3), an isolation resistor (5-4) and 2 feed probes (5-1); the metal wall (5-2) is square annular with square inner and outer rings; the feeding medium substrate (5-6) is square, the outer edge of the feeding medium substrate (5-6) is just embedded in the inner ring of the metal wall (5-2), and the center lines of the feeding medium substrate and the feeding medium substrate are positioned on the same axis; the Wilkinson power divider patch (5-3) is composed of 2 metal bending lines printed on the lower surface of the feed dielectric substrate (5-6), and the length difference of the 2 metal bending lines is equal to lambdag 1/4, wherein lambdag 1 is the dielectric wavelength corresponding to the equivalent dielectric constant of the feed dielectric substrate (5-6); two ends of the isolation resistor (5-4) are respectively connected to the nearest parts of the 2 metal bending lines; the SMA connector (5-5) is arranged on one side wall of the metal wall (5-2) in a penetrating way, an outer conductor of the SMA connector (5-5) is connected with the metal wall (5-2), and an inner conductor of the metal wall (5-2) is connected with an input port of the Wilkinson power divider patch (5-3); the bottom ends of the 2 feed probes (5-1) are respectively and vertically arranged on 2 output ports of the Wilkinson power divider patch (5-3), and the upper ends of the 2 feed probes (5-1) penetrate through the radiation medium substrate (4-1) to be in contact with the radiation metal patch (4-3).
- 2. The miniaturized broadband wide-beam circularly polarized microstrip antenna of the C-band of claim 1, wherein four corners of the inner ring of the dielectric cavity layer dielectric substrate (1-1) are rounded chamfers.
- 3. The miniaturized broadband wide-beam circularly polarized microstrip antenna of the C-band of claim 1, wherein the thickness of the dielectric cavity layer dielectric substrate (1-1) is greater than the thickness of the parasitic dielectric substrate (2-1) and the thickness of the radiating dielectric substrate (4-1).
- 4. The miniaturized broadband wide-beam circularly polarized microstrip antenna of the C-band of claim 1, wherein the side length of the parasitic metal patch (2-3) and the side length of the radiating metal patch (4-3) are smaller than the side length of the inner ring of the dielectric substrate (1-1) of the dielectric cavity layer.
- 5. The miniaturized broadband wide-beam circularly polarized microstrip antenna of the C-band of claim 1, characterized in that the metal ring (3-1) is printed at the upper surface edge of the radiating dielectric substrate (4-1).
- 6. The miniaturized broadband wide-beam circularly polarized microstrip antenna of the C-band of claim 1, wherein the number of dielectric cavity layer metal vias (1-2), parasitic metal vias (2-2), radiating metal vias (4-2) and metal pillars (3-2) is 36.
- 7. The miniaturized broadband wide-beam circularly polarized microstrip antenna of the C-band of claim 1, wherein the lower surface of the feed dielectric substrate (5-6) is flat with the lower surface of the metal wall (5-2).
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| CN110289482A (en) * | 2019-05-29 | 2019-09-27 | 深圳大学 | A kind of wide surface antenna unit of broadband dual polarization pair and aerial array |
| CN110838614B (en) * | 2019-11-21 | 2020-09-04 | 西南交通大学 | Low-profile dual-polarization wide-angle scanning flat phased array antenna |
| CN111029739B (en) * | 2019-11-29 | 2022-10-11 | 维沃移动通信有限公司 | Antenna unit and electronic equipment |
| CN110911816B (en) * | 2019-11-29 | 2023-01-24 | 维沃移动通信有限公司 | Antenna unit and electronic equipment |
| CN112186339B (en) * | 2020-09-29 | 2022-07-29 | 广东工业大学 | Broadband circularly polarized magnetoelectric dipole antenna |
| CN113036459A (en) * | 2021-03-08 | 2021-06-25 | 安徽大学 | Millimeter wave low-profile broadband circularly polarized slot-fed dipole array antenna |
| CN114374092B (en) * | 2021-12-23 | 2022-12-06 | 西安电子科技大学 | Broadband low-profile miniaturized AMC cavity monopole antenna |
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