CN109473505A - A kind of wet etching method - Google Patents
A kind of wet etching method Download PDFInfo
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- CN109473505A CN109473505A CN201811080923.7A CN201811080923A CN109473505A CN 109473505 A CN109473505 A CN 109473505A CN 201811080923 A CN201811080923 A CN 201811080923A CN 109473505 A CN109473505 A CN 109473505A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000001039 wet etching Methods 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 35
- 239000003513 alkali Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 52
- 238000004140 cleaning Methods 0.000 claims description 28
- 238000005406 washing Methods 0.000 claims description 25
- 238000001035 drying Methods 0.000 claims description 13
- 238000005554 pickling Methods 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 abstract description 28
- 238000005096 rolling process Methods 0.000 abstract description 17
- 238000012423 maintenance Methods 0.000 abstract description 15
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 206010027146 Melanoderma Diseases 0.000 abstract description 6
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 241000084978 Rena Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- VQLYBLABXAHUDN-UHFFFAOYSA-N bis(4-fluorophenyl)-methyl-(1,2,4-triazol-1-ylmethyl)silane;methyl n-(1h-benzimidazol-2-yl)carbamate Chemical compound C1=CC=C2NC(NC(=O)OC)=NC2=C1.C=1C=C(F)C=CC=1[Si](C=1C=CC(F)=CC=1)(C)CN1C=NC=N1 VQLYBLABXAHUDN-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
Abstract
The invention proposes a kind of wet etching methods, the innovative wet etching method for using chain type and being combined with slot type, perfectly solves the problems such as EL rolling wheel stamp caused by traditional chain type wet-method etching, belt print, stain blackspot, simultaneously, other groove body idler wheels do not use in addition to etching groove, alkali slot spray does not use, to reduce the consumption and maintenance of equipment consumptive material, greatly reduce the maintenance cost of equipment and greatly improve production efficiency.In addition, alkali slot does not use spray in wet etching of the present invention, thoroughly solves spray easily blocking and back side porous silicon is caused to remove sordid hidden danger.
Description
Technical field
The present invention relates to a kind of wet etching methods, belong to crystal silicon solar battery production field.
Background technique
The purpose of crystal silicon solar battery wet etching are as follows: 1. remove silicon chip edge PN junction, prevent cell piece short circuit up and down；②
Silicon chip back side is processed by shot blasting, cell piece internal light reflection is enhanced；3. removing porous silicon, produced after preventing PE plated film cell piece
Add lustre to spot；4. removing phosphorosilicate glass layer, cell piece White Patches after PE plated film are prevented；Currently, wet etching is in crystal silicon sun electricity
Using chain type wet-method etching method in the production of pond, i.e., the rotation of idler wheel is driven to make silicon wafer on idler wheel by the traction of motor
It is transmitted, so that silicon wafer be made to carry out chain type cleaning in each groove body, due to a large amount of uses of idler wheel in chain type cleaning, idler wheel is easily ground
Damage, corrosion, will lead to cell piece and lead to the problem of EL rolling wheel stamp, stain blackspot, become defective products so as to cause cell piece.Together
When, after chain type wet-method etching, when discharging, can transmit silicon wafer to the gaily decorated basket by belt, and belt is dirty to will lead to cell piece EL skin
Band print, is that cell piece can also become defective products.In addition, conventional wet etches alkali slot using fountain formula to the positive back side of silicon wafer
It being cleaned, spray is easily blocked by lye crystallization, causes medical fluid circulation uneven, and covering is uneven when spraying to silicon wafer, thus
Keep porous silicon removal unclean, generates color spot after leading to PE plated film.
Summary of the invention
The present invention is black in order to solve the rolling wheel stamp being also easy to produce under cell piece EL in conventional wet etching, belt print, stain
Spot problem, the easily blocking of alkali slot spray cause the sordid hidden danger of back side porous silicon removal and conventional wet to etch making for idler wheel
Make the increase of cost of equipment maintenance and the frequent problem of maintenance period with the maintenance of, spray, propose a kind of wet etching method,
The innovative wet etching method for using chain type and combining with slot type of this method, perfectly solves traditional chain type wet process and carves
The problems such as EL rolling wheel stamp caused by erosion, belt print, stain blackspot, meanwhile, other groove body idler wheels do not use in addition to etching groove,
Alkali slot spray does not use, to reduce the consumption and maintenance of equipment consumptive material, greatly reduce equipment maintenance cost and
Greatly improve production efficiency.In addition, alkali slot does not use spray in wet etching of the present invention, it is easy thoroughly to solve spray
It blocks and back side porous silicon is caused to remove sordid hidden danger.
To achieve the above object, the invention adopts the following technical scheme:
A kind of wet etching method, the described method comprises the following steps:
(1) silicon wafer is transmitted on idler wheel, when being transmitted to etching groove, is performed etching with HNO3/HF mixed liquor to silicon chip back side,
Wafer thinning amount 0.2-0.4g after etching, reflectivity 18%-40%；
(2) it transmits after the completion of etching groove into the gaily decorated basket, then the gaily decorated basket is lifted by mechanical arm and is put into sink, carry out pure water and wash；
(3) after the completion of washing, then the gaily decorated basket is lifted by mechanical arm and is put into alkali slot, carry out KOH alkali cleaning；
(4) after the completion of alkali cleaning, the gaily decorated basket is lifted by mechanical arm and is put into sink, carried out pure water and wash；
(5) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into acid tank, carry out HF pickling；
(6) after the completion of pickling, the gaily decorated basket is lifted by mechanical arm and is put into sink, carried out pure water and wash；
(7) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into drying tank, is dried.
In the technical scheme, conventional wet etching is chain type wet-method etching, i.e., drives idler wheel by the traction of motor
Rotation is transmitted silicon wafer on idler wheel, to make silicon wafer carry out chain type cleaning in each groove body, due to idler wheel in chain type cleaning
A large amount of uses, idler wheel is easy to wear, corrosion, will lead to cell piece and is also easy to produce the problem of producing EL rolling wheel stamp, stain blackspot, to lead
Cell piece is caused to become defective products, in addition, blanking can transmit silicon wafer to the gaily decorated basket, belt by belt after chain type wet-method etching
The dirty cell piece that will lead to generates EL belt print, so that cell piece be made to become defective products.Meanwhile conventional wet etching alkali slot uses
Be fountain cleaning, spray is easily blocked by lye crystallization, causes medical fluid circulation uneven, and covering is uneven when spraying to silicon wafer
It is even, to keep porous silicon removal unclean, color spot is generated after leading to PE plated film.
The innovative method combined using chain type with slot type of the invention, is cleaned in step 1) using chain type, because
The purpose of step 1) is that removal silicon chip edge PN junction prevents cell piece short-circuit up and down and polished silicon chip back side to enhance electricity
Pond piece internal light reflection, from current chain type wet-method etching technology, only chain type wet-method etching could throw silicon chip back side
Light processing is to enhance cell piece internal light reflection, such as Schmid equipment of the Rena equipment of Germany, Germany, and step 1) chain
There was only bottom roller in formula groove body, will not lead to the problem of described in background, so step 1) is etched using chain type.
After the completion of step 1) progress, the cleaning of next step chain type is carried out after the completion of conventional wet etching etching etching groove, i.e.,
Silicon wafer enters sink and is cleaned, and sink is made of upper roller, bottom roller, spray, silicon wafer row between upper roller and bottom roller
It walks, and upper roller is made of o-ring rubber ring idler wheel, is prone to wear, will lead to silicon wafer in this way and be also easy to produce rolling wheel stamp, and
It needs to be replaced after rolling wheel wear, increases maintenance of equipment cost, step 2 of the present invention is cleaned using slot type, is completely solved described
There are the problem of.
After the completion of step 2, conventional wet etching rinsing bowl after the completion of will do it next step chain type cleaning, i.e., silicon wafer into
Enter alkaline bath to be cleaned, alkaline bath is made of upper roller, bottom roller, spray, and spray is divided into spray and lower spray, spray point
It is not mounted at upper roller interstitial site at bottom roller interstitial site, silicon wafer is walked between upper roller and bottom roller, because upper
Idler wheel has o-ring rubber ring idler wheel composition, is prone to wear and can be corroded in lye for a long time, so as to cause cell piece production
It so that cell piece is generated EL stain blackspot after raw rolling wheel stamp, the o-ring rubber ring idler wheel corroded and silicon wafer friction, and roll
It needs to be replaced after foot wheel abrasion, increases maintenance of equipment cost.In addition alkali slot carries out silicon wafer by way of spray cleaning clear
It washes, because alkali is easy to produce crystallization, sprays and be easy to be blocked, need periodically to shut down cleaning and dredging is carried out to spray, so not only shadow
Production production capacity is rung, and spray blocks if not having cleaning in time, there can be the sordid hidden danger of back side porous silicon removal, make battery
Piece becomes defective products, is cleaned in step 3) of the present invention using slot type, does not need idler wheel, spray not only, can accomplish idler wheel, spray
Advantage non-maintaining, idler wheel is free of replacement, and porous silicon can also be made to remove cleaner, cleaning by the cleaning method of slot type immersion type
More thoroughly.
After the completion of step 3), conventional wet carries out the cleaning of next step chain type after the completion of etching alkali trough washery, i.e. silicon wafer enters
Sink is cleaned, and sink is made of upper roller, bottom roller, spray, and silicon wafer is walked between upper roller and bottom roller, and upper rolling
Wheel is made of o-ring rubber ring idler wheel, and be prone to wear will lead to silicon wafer and be also easy to produce rolling wheel stamp in this way, and after rolling wheel wear
Need to be replaced, increase maintenance of equipment cost, step 4) of the present invention using slot type clean, completely solve it is described existing for ask
Topic.
After the completion of step 4), conventional wet etching rinsing bowl after the completion of will do it next step chain type cleaning, i.e., silicon wafer into
Enter descaling bath to be cleaned, descaling bath slot is made of upper roller, bottom roller, spray, silicon wafer row between upper roller and bottom roller
It walks, and upper roller is made of o-ring rubber ring idler wheel, be prone to wear will lead to silicon wafer and be also easy to produce rolling wheel stamp in this way, and roll
It needs to be replaced after foot wheel abrasion, increases maintenance of equipment cost, step 5) of the present invention is cleaned using slot type, completely solves described deposit
The problem of.
After the completion of step 5), conventional wet carries out the cleaning of next step chain type after the completion of etching pickling, i.e. silicon wafer enters water
Slot is cleaned, and sink is made of upper roller, bottom roller, spray, and silicon wafer is walked between upper roller and bottom roller, and upper roller
It is made of o-ring rubber ring idler wheel, be prone to wear will lead to silicon wafer and be also easy to produce rolling wheel stamp in this way, and need after rolling wheel wear
Replaced, increase maintenance of equipment cost, step 6) of the present invention using slot type cleaning, completely solve it is described there are the problem of.
After the completion of step 6), the drying of next step chain type is carried out after the completion of conventional wet etching washing, i.e. silicon wafer enters baking
Dry slot is dried, and drying tank is made of upper roller, bottom roller, air knife, and silicon wafer is walked between upper roller and bottom roller, and on
Idler wheel is made of o-ring rubber ring idler wheel, and be prone to wear will lead to silicon wafer and be also easy to produce rolling wheel stamp, and rolling wheel wear in this way
After need to be replaced, increase maintenance of equipment cost, step 7) of the present invention using slot type dry, completely solve it is described existing for ask
Topic.
After the completion of step 7), silicon wafer is transmitted by belt into the gaily decorated basket after the completion of conventional wet etching drying, due to silicon wafer
The back side in crystal silicon PERC solar cell be used as passivation layer, it is very high to silicon chip back side purity requirements, once on belt there are
Dust dirty particle will generate belt print under EL after silicon wafer contact belt, seriously affect product quality, it is bad for leading to product
Product, and after the completion of step 7) of the present invention, it is no longer pass through belt, silicon wafer in the gaily decorated basket, has perfectly solved the problems, such as this, and
And blanking belt conveyor can also be saved simultaneously, the purchase cost for the wet etching corollary equipment that can be greatly reduced；
Preferably, 40-60 DEG C of temperature of step 2 washing, time 2-5min.
Preferably, the mass concentration of step 3) KOH alkali cleaning be 3%-5%, 20-30 DEG C of temperature, time 3-7min.
Preferably, 40-60 DEG C of temperature of step 4) washing, time 5-10min.
Preferably, the mass concentration 8%-15% of step 5) pickling, 20-30 DEG C of temperature, time 5-10min.
Preferably, 50-70 DEG C of step 6) washing temperature, time 3-8min.
Preferably, 60-80 DEG C of step 7) drying temperature, time 6-10min.
The beneficial effects of the present invention are: using the wet etching method that chain type is combined with slot type, perfectly solve
The problems such as EL rolling wheel stamp caused by traditional chain type wet-method etching, belt print, stain blackspot, meanwhile, other slots in addition to etching groove
Body idler wheel does not use, and alkali slot spray does not use, to reduce the consumption and maintenance of equipment consumptive material, greatly reduces and sets
Standby maintenance cost and greatly improve production efficiency.In addition, alkali slot does not use spray in wet etching of the present invention, thoroughly
It solves spray easily blocking and back side porous silicon is caused to remove sordid hidden danger.
Detailed description of the invention
Fig. 1 is wet etching method process flow chart of the invention.
Specific embodiment
The technical program is further elaborated with reference to the accompanying drawing:
Referring to Fig.1.
Embodiment 1:
A kind of wet etching method, which comprises
(1) silicon wafer is transmitted on idler wheel, when being transmitted to etching groove, uses HNO3/ HF mixed liquor performs etching silicon chip back side,
Wafer thinning amount 0.2g after etching, reflectivity 18%；
(2) it transmits after the completion of etching groove into the gaily decorated basket, then the gaily decorated basket is lifted by mechanical arm and is put into sink, is washed, temperature
40 DEG C, time 5min；
(3) after the completion of washing, then the gaily decorated basket is lifted by mechanical arm and is put into alkali slot, carry out KOH alkali cleaning, alkali concentration 5%, temperature
20 DEG C of degree, time 7min；
(4) after the completion of alkali cleaning, the gaily decorated basket is lifted by mechanical arm and is put into sink, washed, 40 DEG C of temperature, time 10min；
(5) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into acid tank, progress HF pickling, concentration 15%, 20 DEG C of temperature, when
Between 10min；
(6) after the completion of pickling, the gaily decorated basket is lifted by mechanical arm and is put into sink, washed, 50 DEG C of washing temperature, the time
8min；
(7) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into drying tank, 60 DEG C of drying temperature, time 10min.
Embodiment 2:
A kind of wet etching method, which comprises
(1) silicon wafer is transmitted on idler wheel, when being transmitted to etching groove, uses HNO3/ HF mixed liquor performs etching silicon chip back side,
Wafer thinning amount 0.3g after etching, reflectivity 28%；
(2) it transmits after the completion of etching groove into the gaily decorated basket, then the gaily decorated basket is lifted by mechanical arm and is put into sink, is washed, temperature
50 DEG C, time 4min；
(3) after the completion of washing, then the gaily decorated basket is lifted by mechanical arm and is put into alkali slot, carry out KOH alkali cleaning, alkali concentration 4%, temperature
25 DEG C of degree, time 5min；
(4) after the completion of alkali cleaning, the gaily decorated basket is lifted by mechanical arm and is put into sink, washed, temperature 50 C, time 8min；
(5) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into acid tank, progress HF pickling, concentration 12%, 25 DEG C of temperature, when
Between 8min；
(6) after the completion of pickling, the gaily decorated basket is lifted by mechanical arm and is put into sink, washed, 60 DEG C of washing temperature, the time
5min；
(7) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into drying tank, 70 DEG C of drying temperature, time 8min.
Embodiment 3:
A kind of wet etching method, which comprises
(1) silicon wafer is transmitted on idler wheel, when being transmitted to etching groove, uses HNO3/ HF mixed liquor performs etching silicon chip back side,
Wafer thinning amount 0.4g after etching, reflectivity 40%；
(2) it transmits after the completion of etching groove into the gaily decorated basket, then the gaily decorated basket is lifted by mechanical arm and is put into sink, is washed, temperature
60 DEG C, time 3min；
(3) after the completion of washing, then the gaily decorated basket is lifted by mechanical arm and is put into alkali slot, carry out KOH alkali cleaning, alkali concentration 3%, temperature
30 DEG C of degree, time 3min；
(4) after the completion of alkali cleaning, the gaily decorated basket is lifted by mechanical arm and is put into sink, washed, temperature 60 C, time 5min；
(5) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into acid tank, progress HF pickling, concentration 8%, 30 DEG C of temperature, when
Between 5min；
(6) after the completion of pickling, the gaily decorated basket is lifted by mechanical arm and is put into sink, washed, 70 DEG C of washing temperature, the time
3min；
(7) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into drying tank, 80 DEG C of drying temperature, time 6min.
Claims (7)
1. a kind of wet etching method, which is characterized in that the described method comprises the following steps:
(1) silicon wafer is transmitted on idler wheel, when being transmitted to etching groove, uses HNO3/ HF mixed liquor performs etching silicon chip back side,
Wafer thinning amount 0.2-0.4g after etching, reflectivity 18%-40%；
(2) it transmits after the completion of etching groove into the gaily decorated basket, then the gaily decorated basket is lifted by mechanical arm and is put into sink, carry out pure water and wash；
(3) after the completion of washing, then the gaily decorated basket is lifted by mechanical arm and is put into alkali slot, carry out KOH alkali cleaning；
(4) after the completion of alkali cleaning, the gaily decorated basket is lifted by mechanical arm and is put into sink, carried out pure water and wash；
(5) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into acid tank, carry out HF pickling；
(6) after the completion of pickling, the gaily decorated basket is lifted by mechanical arm and is put into sink, carried out pure water and wash；
(7) after the completion of washing, the gaily decorated basket is lifted by mechanical arm and is put into drying tank, is dried.
2. a kind of wet etching method according to claim 1, which is characterized in that 40-60 DEG C of temperature of step 2 washing,
Time is 2-5min.
3. a kind of wet etching method according to claim 1, which is characterized in that the mass concentration of step 3) KOH alkali cleaning
For 3%-5%, 20-30 DEG C of temperature, time 3-7min.
4. a kind of wet etching method according to claim 1, which is characterized in that 40-60 DEG C of temperature of step 4) washing,
Time 5-10min.
5. a kind of wet etching method according to claim 1, which is characterized in that the mass concentration 8%- of step 5) pickling
15%, 20-30 DEG C of temperature, time 5-10min.
6. a kind of wet etching method according to claim 1, which is characterized in that 50-70 DEG C of step 6) washing temperature, when
Between 3-8min.
7. a kind of wet etching method according to claim 1, which is characterized in that 60-80 DEG C of step 7) drying temperature, when
Between 6-10min.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165016A (en) * | 2019-04-15 | 2019-08-23 | 南通苏民新能源科技有限公司 | It is a kind of for improving the production method of PERC battery |
| CN112259468A (en) * | 2020-09-15 | 2021-01-22 | 晶澳太阳能有限公司 | Method for judging abnormal reason of solar cell based on PL test |
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| KR20110121812A (en) * | 2010-05-03 | 2011-11-09 | 현대중공업 주식회사 | Apparatus for wet etching |
| CN103361738A (en) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | Polycrystalline silicon solar battery and solar battery polycrystalline silicon slice flocking method |
| CN104900760A (en) * | 2015-05-27 | 2015-09-09 | 东方日升新能源股份有限公司 | Novel crystalline silicon cell wet process edge etching technology |
| CN105932078A (en) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
| CN106449878A (en) * | 2016-10-31 | 2017-02-22 | 苏州宝馨科技实业股份有限公司 | Black silicon preparing method, fluffing machine and black silicon manufactured through preparing method |
| CN106784161A (en) * | 2017-01-18 | 2017-05-31 | 常州捷佳创精密机械有限公司 | A kind of polishing lithographic method of PERC solar cells |
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| CN110165016A (en) * | 2019-04-15 | 2019-08-23 | 南通苏民新能源科技有限公司 | It is a kind of for improving the production method of PERC battery |
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Application publication date: 20190315 |