CN108710401A - A kind of bandgap voltage reference of high-precision large-drive-current - Google Patents
A kind of bandgap voltage reference of high-precision large-drive-current Download PDFInfo
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- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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Abstract
The invention discloses the bandgap voltage references of high-precision large-drive-current, including positive temperature coefficient current generating circuit, zero-temperature coefficient voltage buffer circuit and band gap voltage reference source output stage；Positive temperature coefficient current generating circuit generates the electric current with absolute temperature is proportional to；Zero-temperature coefficient voltage buffer circuit to the current driving ability of positive temperature coefficient current generating circuit promote and output voltage；Band gap voltage reference source output stage detects the variation voltage difference of the output voltage as the opposite zero-temperature coefficient voltage buffer circuit of the output voltage of band gap voltage reference source output stage, and voltage difference is amplified, reversely inhibit the variation of the output voltage of band gap voltage reference source output stage by the voltage difference being amplified.The bandgap voltage reference of the present invention realizes high-precision clamp voltage without amplifier, while can overcome the channel modulation effect of conventional current mirror；Circuit structure is simple, and has larger driving capability and quick load transient response.
Description
Technical field
The invention belongs to IC design field more particularly to large-drive-current band gap reference voltage source circuits.
Background technology
High-precision circuit such as modulus, digital analog converter, phaselocked loop, power-supply management system etc. are required for the band of Low Drift Temperature
Gap a reference source uses as the reference voltage.Traditional bandgap reference voltage source is using amplifier come clamper BE junction voltages, still, amplifier
Using can not only increase additional static current of lcd but also meeting attrition voltage nargin, cause band-gap reference can not be under lower power supply
Work.
The driving capability very little of common bandgap voltage reference, usually less than 0.1mA, this results in bandgap voltage reference
Source cannot connect more low-impedance load；Common solution be add a voltage follower in the output of band gap voltage, but
The imbalance of voltage follower can influence the precision of output voltage and increase the complexity of circuit；Meanwhile considering band gap voltage
Load can mutate, this also needs to faster backfeed loop and inhibits this variation.
Invention content
The present invention proposes a kind of high-precision realized based on standard CMOS process and the band with high current drive capability
Gap reference voltage source.It substitutes amplifier by current loop negative-feedback and carries out clamper to VBE, while being carried using push-pull amplifier
The high amplitude of oscillation.
In order to solve the above technical problems, the present invention provides a kind of bandgap voltage reference of high-precision large-drive-current.
A kind of bandgap voltage reference of high-precision large-drive-current, characterized in that including：Positive temperature coefficient electric current generates
Circuit, zero-temperature coefficient voltage buffer circuit and band gap voltage reference source output stage；
Positive temperature coefficient current generating circuit generates the electric current I with absolute temperature is proportional toPTAT；
Zero-temperature coefficient voltage buffer circuit promotes the current driving ability of positive temperature coefficient current generating circuit
And output voltage V7；
Band gap voltage reference source output stage includes total grid differential amplification structure, be connected to metal-oxide-semiconductor M23 grids recommend knot
Structure；Grid differential amplification structure detection metal-oxide-semiconductor M23 drain electrode output voltages are the output electricity as band gap voltage reference source output stage altogether
Press VoutThe output voltage V of opposite zero-temperature coefficient voltage buffer circuit7Variation voltage difference delta V, and voltage difference delta V amplify,
The voltage difference delta V being amplified is transmitted to the grid end of metal-oxide-semiconductor M23, the reversed drain terminal voltage, that is, band gap voltage base for inhibiting metal-oxide-semiconductor M23
The output voltage V of quasi- source output stageoutVariation.
Positive temperature coefficient current generating circuit includes metal-oxide-semiconductor M1, M2, M3, M4, M5, M6, M7 and PNP pipe Q1, Q2 and resistance
R1 and R2.
The grid of metal-oxide-semiconductor M1, the grid of metal-oxide-semiconductor M2 and drain electrode and the drain electrode of metal-oxide-semiconductor M4 connect altogether；The drain electrode of metal-oxide-semiconductor M1,
The drain electrode of metal-oxide-semiconductor M3, the grid of metal-oxide-semiconductor M5 and the grid of metal-oxide-semiconductor M6 connect altogether；The grid of metal-oxide-semiconductor M3, the grid of metal-oxide-semiconductor M4,
The grid of metal-oxide-semiconductor M7 and drain electrode and the drain electrode of metal-oxide-semiconductor M5 connect altogether；Source electrode of the drain electrode of metal-oxide-semiconductor M6 through resistance R2 and metal-oxide-semiconductor M4,
The emitter of PNP pipe Q2 is connected to current mirror node 4 altogether；The source electrode of metal-oxide-semiconductor M3, is connected in current mirror node at the source electrode of metal-oxide-semiconductor M7 altogether
Emitter through resistance R1 and PNP pipe Q1 after 3 connects altogether；The collector of PNP pipe Q1, Q2, base stage are connected to ground altogether；The source of metal-oxide-semiconductor M1
Pole, the source electrode of M2, the source electrode of M5, M6 source electrode be connected to power vd D altogether.
Zero-temperature coefficient high stable voltage buffer circuit includes metal-oxide-semiconductor M8, M9, M10, resistance R3, capacitance C1 and PNP pipe
Q3。
The grid of metal-oxide-semiconductor M8 is connect with the grid of the metal-oxide-semiconductor M2 in positive temperature coefficient current generating circuit；Metal-oxide-semiconductor M9's
Grid is connect with the drain electrode of the metal-oxide-semiconductor M5 in positive temperature coefficient current generating circuit；The drain electrode of metal-oxide-semiconductor M8, the leakage of metal-oxide-semiconductor M9
Pole, metal-oxide-semiconductor M10 grid connect altogether, and the drain electrode of metal-oxide-semiconductor M10 is connected to through capacitance C1, the drain electrode of metal-oxide-semiconductor M10 is simultaneously through resistance
R3 is connected to the emitter of the source electrode of metal-oxide-semiconductor M9, PNP pipe Q3；The base stage and collector of PNP pipe Q3 is connected to ground altogether.Metal-oxide-semiconductor M8's
Source electrode, M9 source electrode be connected to power vd D altogether.The drain voltage of metal-oxide-semiconductor M10 is zero-temperature coefficient high stable voltage buffer circuit
Output voltage V7。
Band gap voltage reference source include metal-oxide-semiconductor M11, M12, M13, M14, M15, M16, M17, M18, M19, M20, M21,
M22 and M23；Wherein, metal-oxide-semiconductor M11, M12, M13, M14, M15 and M16 constitutes grid differential amplification structure altogether；Metal-oxide-semiconductor M18 and M22
Constitute push-pull configuration.
The source electrode of metal-oxide-semiconductor M12, the source electrode of metal-oxide-semiconductor M14 are connected to MOS in zero-temperature coefficient high stable voltage buffer circuit altogether
The drain electrode of pipe M10, the grid of metal-oxide-semiconductor M12, the grid of metal-oxide-semiconductor M11 and drain electrode, the drain electrode of metal-oxide-semiconductor M15 connect altogether；Metal-oxide-semiconductor M14's
The drain electrode of grid and drain electrode, the grid of metal-oxide-semiconductor M13, metal-oxide-semiconductor M16 connects altogether；The grid of metal-oxide-semiconductor M15, the grid of M16 with outside
Bias voltage VB connections；The source electrode of metal-oxide-semiconductor M15, the source grounding of M16；The drain electrode of metal-oxide-semiconductor M12, the drain electrode of metal-oxide-semiconductor M17 with
Grid, metal-oxide-semiconductor M18 grid connect altogether；The drain electrode of metal-oxide-semiconductor M13, the drain electrode of metal-oxide-semiconductor M19 and the grid of grid, metal-oxide-semiconductor M20 are total
It connects；The source electrode of metal-oxide-semiconductor M17, the source electrode of M18, the source electrode of M19, M20 source electrode be connected to ground altogether；Source electrode, the metal-oxide-semiconductor of metal-oxide-semiconductor M11
The drain electrode of the source electrode, metal-oxide-semiconductor M23 of M13 meets the output voltage V as band gap voltage reference source altogetherout；The grid of metal-oxide-semiconductor M23,
The drain electrode of metal-oxide-semiconductor M22, the drain electrode of metal-oxide-semiconductor M18 connect altogether；The grid of metal-oxide-semiconductor M22, the grid of metal-oxide-semiconductor M21 and drain electrode, metal-oxide-semiconductor
The drain electrode of M20 connects altogether；The source electrode of metal-oxide-semiconductor M21, the source electrode of M22, M23 source electrode be connected to power vd D altogether.
The advantageous effect that the present invention is reached：
The bandgap voltage reference of the present invention realizes high-precision clamp voltage without amplifier, while can overcome tradition
The channel modulation effect of current mirror；Circuit structure of the present invention is simple, and has larger driving capability and quick load transient
Response.
Description of the drawings
The band gap reference voltage source circuit of Fig. 1 present invention.
Specific implementation mode
The invention will be further described below in conjunction with the accompanying drawings.Following embodiment is only used for clearly illustrating the present invention
Technical solution, and not intended to limit the protection scope of the present invention.
Circuit composition of the present invention：
(1) metal-oxide-semiconductor M1, M2, M3, M4, M5, M6, M7 and PNP pipe Q1, Q2 and resistance R1 and R2 constitute the positive temperature of high-precision
Coefficient current generation circuit generates the electric current I with absolute temperature is proportional toPTAT。
The grid of metal-oxide-semiconductor M1, the grid of metal-oxide-semiconductor M2 and drain electrode and the drain electrode of metal-oxide-semiconductor M4 connect altogether；The drain electrode of metal-oxide-semiconductor M1,
The drain electrode of metal-oxide-semiconductor M3, the grid of metal-oxide-semiconductor M5 and the grid of metal-oxide-semiconductor M6 connect altogether；The grid of metal-oxide-semiconductor M3, the grid of metal-oxide-semiconductor M4,
The grid of metal-oxide-semiconductor M7 and drain electrode and the drain electrode of metal-oxide-semiconductor M5 connect altogether；Source electrode of the drain electrode of metal-oxide-semiconductor M6 through resistance R2 and metal-oxide-semiconductor M4,
The emitter of PNP pipe Q2 is connected to current mirror node 4 altogether；The source electrode of metal-oxide-semiconductor M3, is connected in current mirror node at the source electrode of metal-oxide-semiconductor M7 altogether
Emitter through resistance R1 and PNP pipe Q1 after 3 connects altogether；The collector of PNP pipe Q1, Q2, base stage are connected to ground altogether；The source of metal-oxide-semiconductor M1
Pole, the source electrode of M2, the source electrode of M5, M6 source electrode be connected to power vd D altogether.
If metal-oxide-semiconductor M1 and M2, M3 and M4, M5 and M6, M7 and M8 wide W long L ratios difference are identical, i.e.,：
M5, M6, M7 and R2 constitute negative-feedback clamper, make by M1, M2, M3 and M4 current mirror node 3 constituted and node 4
Voltage is accurately equal, i.e. V3=V4；If Q1 emitter currents are IPTAT：
Wherein, VEB2For the emitter-base bandgap grading and base voltage difference of PNP pipe Q2, VEB1For the emitter-base bandgap grading and base voltage difference of PNP pipe Q1,For thermal voltage, q is electron charge, KBFor Boltzmann constant, T is absolute temperature, and N is the hair of PNP pipe Q1 and Q2
Emitter area ratio, M are PNP pipe Q2 and Q1 collector current value ratio, R1For the resistance value of resistance R1.
WhenThen the electric current of metal-oxide-semiconductor M5 and M6 is
Wherein, a is the ratio of metal-oxide-semiconductor M5 breadth length ratios and M1 breadth length ratios.
(2) it is slow to constitute zero-temperature coefficient high stable voltage by metal-oxide-semiconductor M8, M9, M10 and resistance R3 capacitances C1 and PNP pipe Q3
Rush circuit, output voltage V7, the voltage is with certain current driving ability.
The grid of metal-oxide-semiconductor M8 is connect with the grid of the metal-oxide-semiconductor M2 in positive temperature coefficient current generating circuit；Metal-oxide-semiconductor M9's
Grid is connect with the drain electrode of the metal-oxide-semiconductor M5 in positive temperature coefficient current generating circuit；The drain electrode of metal-oxide-semiconductor M8, the leakage of metal-oxide-semiconductor M9
Pole, metal-oxide-semiconductor M10 grid connect altogether, and the drain electrode of metal-oxide-semiconductor M10 is connected to through capacitance C1, the drain electrode of metal-oxide-semiconductor M10 is simultaneously through resistance
R3 is connected to the emitter of the source electrode of metal-oxide-semiconductor M9, PNP pipe Q3；The base stage and collector of PNP pipe Q3 is connected to ground altogether.Metal-oxide-semiconductor M8's
Source electrode, M9 source electrode be connected to power vd D altogether.The drain voltage of metal-oxide-semiconductor M10 is zero-temperature coefficient high stable voltage buffer circuit
Output voltage V7。
If the grid end bias voltage of M8 is V2, select the emitter area of Q3 and Q2 equal.M1 and M8, M9 and M4 wide W long L
It is more identical than respectively.
Then the electric current of M8 is positive temperature coefficient electric current
PNP pipe Q3, metal-oxide-semiconductor M9 and M8 constitute grid amplification altogether.M10 and R3 constitutes common source amplification, and output is amplified for grid altogether
Input, therefore, metal-oxide-semiconductor M8, M9, M10 and resistance R3 capacitances C1 and PNP pipe Q3 constitute the negative feedback loop of a unit gain
Road, it ensures V11=V3=V4.Capacitance C1 ensure that the frequency stability of this loop.Wherein, V11For the electricity of Fig. 1 interior joints 11
Pressure.
Because BE knots have negative temperature coefficient, VTWith positive temperature coefficient, R3For the resistance value of resistance R3, so passing through selection
Resistance R3 and R1 or a or M, N appropriate, it is V that output voltage, which may be implemented,7Zero-temperature coefficient.Wherein, VEB3For PNP pipe Q3's
Emitter-base bandgap grading and base voltage difference.
(3) metal-oxide-semiconductor M11, M12, M13, M14, M15, M16, M17, M18, M19, M20, M21, M22 and M23 constitutes band
The output stage of gap voltage-reference, output voltage Vout.It further improves the electric current driving energy of band gap voltage reference source
Power, while realizing quick load transient response.
The source electrode of metal-oxide-semiconductor M12, the source electrode of metal-oxide-semiconductor M14 are connected to MOS in zero-temperature coefficient high stable voltage buffer circuit altogether
The drain electrode of pipe M10, the grid of metal-oxide-semiconductor M12, the grid of metal-oxide-semiconductor M11 and drain electrode, the drain electrode of metal-oxide-semiconductor M15 connect altogether；Metal-oxide-semiconductor M14's
The drain electrode of grid and drain electrode, the grid of metal-oxide-semiconductor M13, metal-oxide-semiconductor M16 connects altogether；The grid of metal-oxide-semiconductor M15, the grid of M16 with outside
Bias voltage VB connections；The source electrode of metal-oxide-semiconductor M15, the source grounding of M16；The drain electrode of metal-oxide-semiconductor M12, the drain electrode of metal-oxide-semiconductor M17 with
Grid, metal-oxide-semiconductor M18 grid connect altogether；The drain electrode of metal-oxide-semiconductor M13, the drain electrode of metal-oxide-semiconductor M19 and the grid of grid, metal-oxide-semiconductor M20 are total
It connects；The source electrode of metal-oxide-semiconductor M17, the source electrode of M18, the source electrode of M19, M20 source electrode be connected to ground altogether；Source electrode, the metal-oxide-semiconductor of metal-oxide-semiconductor M11
The drain electrode of the source electrode, metal-oxide-semiconductor M23 of M13 meets the output voltage V as band gap voltage reference source altogetherout；The grid of metal-oxide-semiconductor M23,
The drain electrode of metal-oxide-semiconductor M22, the drain electrode of metal-oxide-semiconductor M18 connect altogether；The grid of metal-oxide-semiconductor M22, the grid of metal-oxide-semiconductor M21 and drain electrode, metal-oxide-semiconductor
The drain electrode of M20 connects altogether；The source electrode of metal-oxide-semiconductor M21, the source electrode of M22, M23 source electrode be connected to power vd D altogether.
Wherein, VB is external bias voltage.M11, M12, M15 and M13, M14, M16 constitute total grid differential amplification structure,
They detect the output voltage V of the output stage of band gap voltage reference sourceoutOpposite zero-temperature coefficient high stable voltage buffer circuit
Output voltage V7Faint variation voltage difference delta V, and voltage difference delta V is amplified, the voltage difference delta V being amplified is transmitted to metal-oxide-semiconductor
The grid end of M23, and then the reversed drain terminal voltage i.e. output voltage V for inhibiting metal-oxide-semiconductor M23outVariation.Therefore, for the wink of load
State changes, this loop can make quick response and inhibit this variation.
Since metal-oxide-semiconductor M22 and M18 are push-pull configuration, the grid voltage maximum of metal-oxide-semiconductor M23 can be right close to power vd D
In the state of underloading, metal-oxide-semiconductor M23 is in subthreshold value state, and metal-oxide-semiconductor M23 hardly consumes electric current；The grid voltage minimum of metal-oxide-semiconductor M23 can
With close to 0, metal-oxide-semiconductor M23 is in linear state, therefore the output stage of larger load current band gap voltage reference source can be driven to be
Unit gain negative-feedback, therefore：
The effect of the zero-temperature coefficient voltage buffer circuit of high stable：
Because of external bias VB and nonideal voltage source, if external interference (power source change or temperature change or
Noise) cause VB that instantaneous variation occurs.This variation can be transmitted to node 7 by M14 and M16, i.e., to V7Precision impact.
For traditional unity gain voltage follower, when instantaneous variation occurs for load, it needs long time that can just be restored to
Original state；Voltage buffer circuit in the present invention：If VB raisings cause V7Voltage reduce, this variation by PNP pipe Q3,
Metal-oxide-semiconductor M9 and M8 are transmitted to the grid end of metal-oxide-semiconductor M10, and then the reversed drain terminal voltage i.e. output voltage V for inhibiting metal-oxide-semiconductor M107's
Variation, therefore, for the instantaneous variation of VB, V7It can keep constant, and then ensure output voltage VoutIt is constant, improve defeated
Go out the precision of voltage.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (7)
1. a kind of bandgap voltage reference of high-precision large-drive-current, characterized in that including：Positive temperature coefficient electric current generates electricity
Road, zero-temperature coefficient voltage buffer circuit and band gap voltage reference source output stage；
Positive temperature coefficient current generating circuit generates the electric current with absolute temperature is proportional toI PTAT ；
Zero-temperature coefficient voltage buffer circuit to the current driving ability of positive temperature coefficient current generating circuit carry out promote and it is defeated
Go out voltage V7；
Band gap voltage reference source output stage includes total grid differential amplification structure, is connected to the push-pull configuration of metal-oxide-semiconductor M23 grids；Altogether
It is the output voltage V as band gap voltage reference source output stage that grid differential amplification structure, which detects metal-oxide-semiconductor M23 drain electrode output voltages,out
The output voltage V of opposite zero-temperature coefficient voltage buffer circuit7Variation voltage difference delta V, and voltage difference delta V amplify, put
Big voltage difference delta V is transmitted to the grid end of metal-oxide-semiconductor M23, the reversed drain terminal voltage, that is, band gap voltage reference source for inhibiting metal-oxide-semiconductor M23
The output voltage V of output stageoutVariation.
2. a kind of bandgap voltage reference of high-precision large-drive-current according to claim 1, characterized in that positive temperature
Coefficient current generation circuit includes metal-oxide-semiconductor M1, M2, M3, M4, M5, M6, M7 and PNP pipe Q1, Q2 and resistance R1 and R2.
3. a kind of bandgap voltage reference of high-precision large-drive-current according to claim 2, characterized in that metal-oxide-semiconductor
The grid of M1, the grid of metal-oxide-semiconductor M2 and drain electrode and the drain electrode of metal-oxide-semiconductor M4 connect altogether；The drain electrode of metal-oxide-semiconductor M1, the drain electrode of metal-oxide-semiconductor M3,
The grid of metal-oxide-semiconductor M5 and the grid of metal-oxide-semiconductor M6 connect altogether；The grid of metal-oxide-semiconductor M3, the grid of metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 grid and
The drain electrode with metal-oxide-semiconductor M5 that drains connects altogether；The emitter of source electrode of the drain electrode of metal-oxide-semiconductor M6 through resistance R2 and metal-oxide-semiconductor M4, PNP pipe Q2
It is connected to current mirror node 4 altogether；The source electrode of metal-oxide-semiconductor M3, the source electrode of metal-oxide-semiconductor M7, be connected in altogether after current mirror node 3 through resistance R1 with
The emitter of PNP pipe Q1 connects altogether；The collector of PNP pipe Q1, Q2, base stage are connected to ground altogether；The source electrode of metal-oxide-semiconductor M1, the source electrode of M2, M5
Source electrode, M6 source electrode be connected to power vd D altogether.
4. a kind of bandgap voltage reference of high-precision large-drive-current according to claim 1, characterized in that zero-temperature coefficient
Coefficient high stable voltage buffer circuit includes metal-oxide-semiconductor M8, M9, M10, resistance R3, capacitance C1 and PNP pipe Q3.
5. a kind of bandgap voltage reference of high-precision large-drive-current according to claim 4, characterized in that metal-oxide-semiconductor
The grid of M8 is connect with the grid of the metal-oxide-semiconductor M2 in positive temperature coefficient current generating circuit；The grid of metal-oxide-semiconductor M9 and positive temperature system
The drain electrode connection of metal-oxide-semiconductor M5 in number current generating circuit；The drain electrode of metal-oxide-semiconductor M8, the drain electrode of metal-oxide-semiconductor M9, metal-oxide-semiconductor M10 grid
Extremely connect altogether, and be connected to the drain electrode of metal-oxide-semiconductor M10 through capacitance C1, the drain electrode of metal-oxide-semiconductor M10 is connected to metal-oxide-semiconductor M9 through resistance R3 simultaneously
Source electrode, PNP pipe Q3 emitter；The base stage and collector of PNP pipe Q3 is connected to ground altogether；The source electrode of metal-oxide-semiconductor M8, the source electrode of M9 are total
It is connected to power vd D；The drain voltage of metal-oxide-semiconductor M10 is zero-temperature coefficient high stable voltage buffer circuit output voltage V7。
6. a kind of bandgap voltage reference of high-precision large-drive-current according to claim 1, characterized in that band gap electricity
It includes metal-oxide-semiconductor M11, M12, M13, M14, M15, M16, M17, M18, M19, M20, M21, M22 and M23 to press a reference source；Wherein,
Metal-oxide-semiconductor M11, M12, M13, M14, M15 and M16 constitute grid differential amplification structure altogether；Metal-oxide-semiconductor M18 and M22 constitute push-pull configuration.
7. a kind of bandgap voltage reference of high-precision large-drive-current according to claim 6, characterized in that metal-oxide-semiconductor
The source electrode of M12, the source electrode of metal-oxide-semiconductor M14 are connected to the drain electrode of metal-oxide-semiconductor M10 in zero-temperature coefficient high stable voltage buffer circuit altogether,
The grid of metal-oxide-semiconductor M12, the grid of metal-oxide-semiconductor M11 and drain electrode, the drain electrode of metal-oxide-semiconductor M15 connect altogether；The grid of metal-oxide-semiconductor M14 and drain electrode,
The drain electrode of the grid, metal-oxide-semiconductor M16 of metal-oxide-semiconductor M13 connects altogether；The grid of metal-oxide-semiconductor M15, the grid of M16 with external bias voltage VB
Connection；The source electrode of metal-oxide-semiconductor M15, the source grounding of M16；The drain electrode of metal-oxide-semiconductor M12, the drain electrode of metal-oxide-semiconductor M17 and grid, metal-oxide-semiconductor
The grid of M18 connects altogether；The drain electrode of metal-oxide-semiconductor M13, the drain electrode of metal-oxide-semiconductor M19 and the grid of grid, metal-oxide-semiconductor M20 connect altogether；Metal-oxide-semiconductor M17
Source electrode, the source electrode of M18, the source electrode of M19, M20 source electrode be connected to ground altogether；The source electrode of metal-oxide-semiconductor M11, the source electrode of metal-oxide-semiconductor M13,
The drain electrode of metal-oxide-semiconductor M23 meets the output voltage V as band gap voltage reference source altogetherout；The leakage of the grid, metal-oxide-semiconductor M22 of metal-oxide-semiconductor M23
The drain electrode of pole, metal-oxide-semiconductor M18 connects altogether；The grid of metal-oxide-semiconductor M22, the grid of metal-oxide-semiconductor M21 and drain electrode, the drain electrode of metal-oxide-semiconductor M20 connect altogether；
The source electrode of metal-oxide-semiconductor M21, the source electrode of M22, M23 source electrode be connected to power vd D altogether.
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| CN109799862A (en) * | 2019-01-23 | 2019-05-24 | 江苏信息职业技术学院 | A kind of bandgap voltage reference |
| CN112114611A (en) * | 2019-06-21 | 2020-12-22 | 圣邦微电子（北京）股份有限公司 | Circuit for improving transient response speed of voltage mode control loop |
| CN112130611A (en) * | 2020-09-07 | 2020-12-25 | 深圳市第二人民医院 | Stable power supply unit of gene analysis |
| WO2021077846A1 (en) * | 2019-10-25 | 2021-04-29 | 北京智芯微电子科技有限公司 | Low dropout linear voltage regulator circuit and device |
| CN114080580A (en) * | 2020-10-27 | 2022-02-22 | 深圳市汇顶科技股份有限公司 | Bandgap reference circuit and integrated circuit |
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| CN109799862A (en) * | 2019-01-23 | 2019-05-24 | 江苏信息职业技术学院 | A kind of bandgap voltage reference |
| CN112114611A (en) * | 2019-06-21 | 2020-12-22 | 圣邦微电子（北京）股份有限公司 | Circuit for improving transient response speed of voltage mode control loop |
| WO2021077846A1 (en) * | 2019-10-25 | 2021-04-29 | 北京智芯微电子科技有限公司 | Low dropout linear voltage regulator circuit and device |
| CN112130611A (en) * | 2020-09-07 | 2020-12-25 | 深圳市第二人民医院 | Stable power supply unit of gene analysis |
| CN114080580A (en) * | 2020-10-27 | 2022-02-22 | 深圳市汇顶科技股份有限公司 | Bandgap reference circuit and integrated circuit |
| WO2022087812A1 (en) * | 2020-10-27 | 2022-05-05 | 深圳市汇顶科技股份有限公司 | Bandgap voltage reference circuit and integrated circuit |
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