CN108456872A - Film deposition apparatus - Google Patents
Film deposition apparatus Download PDFInfo
- Publication number
- CN108456872A CN108456872A CN201810153835.9A CN201810153835A CN108456872A CN 108456872 A CN108456872 A CN 108456872A CN 201810153835 A CN201810153835 A CN 201810153835A CN 108456872 A CN108456872 A CN 108456872A
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- Prior art keywords
- gas
- substrate
- deposition apparatus
- film deposition
- jet
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- 230000008021 deposition Effects 0.000 title claims abstract description 53
- 239000007789 gas Substances 0.000 claims abstract description 272
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 238000002347 injection Methods 0.000 claims abstract description 31
- 239000007924 injection Substances 0.000 claims abstract description 31
- 239000007921 spray Substances 0.000 claims abstract description 29
- 238000005507 spraying Methods 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 48
- 238000000231 atomic layer deposition Methods 0.000 claims description 27
- 239000012495 reaction gas Substances 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- FWDQDBTTXSRLHJ-UHFFFAOYSA-N C(C)N(C)[Zr] Chemical compound C(C)N(C)[Zr] FWDQDBTTXSRLHJ-UHFFFAOYSA-N 0.000 description 1
- DVOBFBBUJSCXOR-UHFFFAOYSA-N CCN([Zr])CC Chemical compound CCN([Zr])CC DVOBFBBUJSCXOR-UHFFFAOYSA-N 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Abstract
The film deposition apparatus of an embodiment according to the present invention may include gas injector unit, the gas injector unit includes the first ejection section and the second ejection section for spraying mutually different deposition gases to substrate along first direction alignment, and first ejection section includes：First jet module sprays first gas；And second jet module, at least one side being arranged in the two sides on the first direction of first jet module, and second gas is sprayed, and first jet module includes：First gas pipe supplies the first gas；And first plasma generation electrode, it is arranged in below the first gas pipe, so that the first gas is penetrated through and the first gas is made to be sprayed to the substrate, and second jet module includes：Jet body is disposed with the space for accommodating the second gas in inside；And multiple injection nozzles, it is arranged in the downside of the jet body, and spray the second gas being located in the space.
Description
Technical field
The present invention relates to a kind of film deposition apparatus.
Background technology
In general, the method for depositing the film of predetermined thickness on substrate is touched just like sputtering (sputtering) etc. using physics
Physical vaporous deposition (the PVD hit：Physical vapor deposition), and utilize the chemical gaseous phase of chemical reaction
Sedimentation (CVD：Chemical vapor deposition) etc..
Common CVD injects a variety of reaction gas into chamber and the reaction product of generation is deposited on substrate simultaneously.
But in the case where injecting reaction gas into chamber simultaneously by CVD modes, not only react in substrate surface, and
And also react above substrate, it is high so as to cause the possibility for generating particle, and film forming speed be up to 100nm/min with
On, to form fine and close film to be difficult to.
Therefore, a kind of atomic layer deposition method (ALD for reducing particle and generating and fine and close film capable of being formed is being developed：
atomic layer deposition).Atomic layer deposition method is to include the reaction gas of an introduces a collection substance to chamber injection and make
Substrate of its chemisorption after heating, then by including the reaction gas of other source substances to chamber injection, to pass through
Chemical reaction between the substance of source and the method for depositing product in substrate surface.This atomic layer deposition method can deposit ladder
Cover (step coverage) outstanding and low impurity content pure film.But the shortcomings that atomic layer deposition method, is, due to
Film forming speed is low to cause manufacturing time and manufacturing cost to increase.
Invention content
The present invention provides a kind of film deposition apparatus that a variety of deposition procedures can be executed in a chamber.
Also, the present invention provides a kind of film deposition that can prevent substrate that breakage is contaminated or occurred in deposition procedures
Device.
The film deposition apparatus of an embodiment according to the present invention may include gas injector unit, the gas injection list
Member include along first direction alignment and to substrate spray mutually different deposition gases the first ejection section and second injection
Portion, wherein first ejection section includes：First jet module sprays first gas；And second jet module, it is arranged in
At least one side in two sides on the first direction of first jet module, and second gas is sprayed, first spray
Penetrating module includes：First gas pipe supplies the first gas；And first plasma generation electrode, it is arranged in described
Below one flue, the first gas is made to penetrate through and the first gas is made to be sprayed to the substrate, and second injection
Module includes：Jet body is disposed with the space for accommodating the second gas in inside；And multiple injection nozzles, it is arranged in
The downside of the jet body, and spray the second gas being located in the space.
First jet module can also include：First exhaust portion, adjacent to first plasma generation electrode
And arrange, and the first gas is discharged.
When observing in the plane, the first exhaust portion can surround first plasma generation electrode.
First plasma generation electrode can be the plate-like shape for having quadrangular plan.
First plasma generation electrode can extend along the second direction intersected with the first direction.
First plasma generation electrode can have multiple first through holes penetrated through along third direction, described
Third direction intersects with the first direction and second direction.
First ejection section can also include：First gas curtain gas jet portion, surrounds first jet module, and to institute
State substrate injection gas curtain gas.
First ejection section can also include：Second gas curtain gas jet portion, surrounds second jet module, and to institute
State substrate injection gas curtain gas.
Second jet module can also include：Second exhaust portion arranges adjacent to the jet body, and is discharged
The second gas.
The jet body can be arranged in inside the second exhaust portion.
The jet body can extend along the second direction intersected with the first direction.
Second ejection section may include：Second gas pipe supplies third gas；And second plasma generate electricity
Pole is arranged in below the second gas pipe, and the third gas is made to penetrate through and the third gas is made to be sprayed to the substrate.
Second ejection section can also include：Third exhaust portion, adjacent to second plasma generation electrode
Arrangement, and the third gas is discharged.
Second plasma generation electrode can be the plate-like shape for having quadrangular plan.
Second plasma generation electrode can extend along the second direction intersected with the first direction.
Second plasma generation electrode can have multiple second through holes penetrated through along third direction, described
Third direction intersects with the first direction and second direction.
Second ejection section can also include：Third gas curtain gas jet portion surrounds second plasma and generates electricity
Pole, and spray gas curtain gas to the substrate.
The first gas can be the source gas applied to atomic layer deposition (Atomic Layer Deposition) process
Body, the second gas can be the reaction gas applied to atomic layer deposition (Atomic Layer Deposition) process.
The third gas can be applied to chemical vapor deposition (Chemical Vapor Deposition) process
Gas.
The film deposition apparatus can also include：Substrate transferring unit supports the substrate, and along the first direction
Transmit the substrate.
According to above-mentioned film deposition apparatus, a variety of deposition procedures can be executed in a chamber.
Further, it is possible to which substrate is prevented to be contaminated or occur damaged in deposition procedures.
Description of the drawings
Fig. 1 is the schematical stereogram of the film deposition apparatus of an embodiment according to the present invention.
Fig. 2 and Fig. 3 is the schematical sectional view for intercepting the gas injector unit of Fig. 1 along II-II'.
Fig. 4 is the schematical stereogram of the first plasma generation electrode of Fig. 1.
Fig. 5 is the schematical sectional view intercepted along the V-V' of Fig. 4.
Fig. 6 is the schematical stereogram of the jet body of Fig. 1.
Fig. 7 is the upward view of the jet body of Fig. 1.
Symbol description
10：Gas injector unit 30：Substrate
50：Substrate transferring unit 100：First ejection section
110：First jet module 111：First gas pipe
113：First plasma generation electrode 115：First exhaust portion
130：Second jet module 131：Jet body
133：Space 135：Multiple injection nozzles
139：Second exhaust portion 300：Second ejection section
311：Second gas pipe 313：Second plasma generation electrode
315：Third exhaust portion 317：Third gas curtain gas jet portion
Specific implementation mode
Hereinafter, the embodiment of the present invention is described in detail with reference to attached drawing, so that in the technical field of the invention
Personnel with basic knowledge can easily implement.The present invention can be implemented as a variety of different forms, and be not limited to
Embodiment described herein.In order to clearly state the present invention, the part unrelated with explanation, Er Qie are omitted in attached drawing
Identical reference numeral is imparted to same or similar inscape in the whole instruction.
In addition, for convenience of description, to the size and thickness of each composition shown in the accompanying drawings with arbitrary size and thickness
Degree is shown, therefore the present invention is not necessarily limited to the content of diagram.
In the accompanying drawings, thickness is enlargedly shown in order to conclusively show multiple layer and region.Moreover, in the accompanying drawings, being
Convenient for explanation, exaggerate the thickness for showing a part of layer and region.When the part for mentioning layer, film, region, plate etc. is located at other
Part "upper" or " on " when, not only include it is " direct " positioned at " top " of other parts the case where, further include the two it
Between the case where there are other parts.
In addition, throughout the specification, unless there are it is specific it is opposite record, otherwise when mentioning some parts " including (packet
Containing) " a certain inscape when, it is meant that can also include other inscapes, and be not excluded for other inscapes.Also,
In the whole instruction, " above " indicates to be located above or below object part, does not necessarily mean that positioned at weight
Upside on the basis of force direction.
Hereinafter, referring to figs. 1 to Fig. 3, the film deposition of an embodiment according to the present invention is illustrated.
Fig. 1 is the schematical stereogram of the film deposition apparatus of an embodiment according to the present invention, Fig. 2 and Fig. 3 be by
The schematical sectional view that the gas injector unit of Fig. 1 is intercepted along II-II'.
Referring to figs. 1 to Fig. 3, the film deposition apparatus of the present embodiment may include：Gas injector unit 10, selectively sprays
Penetrate mutually different deposition gases；And substrate transferring unit 50, for transmitting substrate 30.In the present embodiment, substrate transmits
Along first direction (X-direction), back and forth transmission substrate 30, gas injector unit 10 can select unit 50 to the substrate 30 of transmission
Property jet deposition gas and substrate 30 formed film.
The gas injector unit 10 of the present embodiment may include the first ejection section 100 and the second ejection section 300.First injection
Portion 100 can be used for atomic layer deposition (Atomic Layer Deposition) process, 300 can be used for of the second ejection section
Learn vapor deposition (Chemical Vapor Deposition) process.
More specifically, the first ejection section 100 forms film, the first ejection section by atomic layer deposition process in substrate 30
100 can spray the source gas used in atomic layer deposition process and reaction gas.That is, the first ejection section 100 can be to substrate
Source gas and reaction gas are sprayed on 30 and form film in substrate 30.
The source gas of first ejection section 100 injection can be the gas for including metal precursor (metal precursor).
For example, source gas may include zirconium (Zr).More specifically, source gas can be four (ethylmethylamino) zirconium (Zr (N (CH3)
(C2H5))4：Tetra-ethyl-methyl amino zirconium, TEMAZ), four (diethylamino) zirconium (Zr (N
(C2H5)2)4：Tetrakis-diethylamino-zirconium, TDEAZ) etc..
The reaction gas of first ejection section 100 injection can react with above-mentioned source gas.For example, reaction gas can
To be the nonmetallic reaction gas to react with above-mentioned metal precursor.For example, reaction gas may include O3、O2And H2O
At least one of.However, the source gas and reaction gas of the injection of the first ejection section 100 are not limited to the kind of above-mentioned gas
Class can use a variety of source gases used in atomic layer deposition process and reaction gas.
Second ejection section 300 forms film by chemical vapor deposition process in substrate 30, and the second ejection section 300 can spray
Penetrate SiH4+NH3+N2、SiH4+N2O、SiH4+O2Deng.Second ejection section 300 gas can be become to plasmoid and
It is sprayed to substrate 30.For example, the second ejection section 300 can will mix SiH4、NH3And N2Gas become plasmoid and
It is sprayed to substrate 30, and then forms film.
In the present embodiment, the first ejection section 100 and the second ejection section 300 of gas injector unit 10 can select respectively
Spray corresponding gas to property.More specifically, by atomic layer deposition process on substrate 30 formed film in the case of, can
Only to make the first ejection section 100 of gas injector unit 10 work.In this case, the second injection of gas injector unit 10
Portion 300 can not work.With reference to Fig. 3, when substrate 30 passes through gas by substrate transferring unit 50 along first direction (X-direction)
When the lower part of injection unit 10, the first ejection section 100 can only be made to work and spray gas to substrate 30.
Alternatively, in the case where forming film on substrate 30, can only make gas injection list by chemical vapor deposition
The second ejection section 300 work of member 10.In this case, the first ejection section 100 of gas injector unit 10 can not work.
When substrate 30 passes through the lower part of gas injector unit 10 along first direction (X-direction), it can only make 300 work of the second ejection section
Make and sprays gas to substrate 30.
Alternatively, the first ejection section 100 and the second ejection section 300 of gas injector unit 10 can work at the same time.For example, working as
When substrate 30 passes through the lower part of gas injector unit 10 along first direction (X-direction), the first ejection section 100 and the second ejection section
300 can work and spray gas to substrate 30.
In figure 3, it if substrate 30 moves to the right from left side, in the specific region of substrate 30, is laminated first from first
The deposition gases that ejection section 100 is sprayed, the deposition gases next sprayed from the second ejection section 300 can be laminated thereon.Most
Eventually, when assuming that forming two films on substrate 30, a film (Layer) can be laminated by the first ejection section 100,
Another film thereon is laminated by the second ejection section 300.That is, a film can pass through original using the first ejection section 100
Sublayer deposition procedures and formed, another film can be formed using the second ejection section 300 by chemical vapor deposition process.
For the film deposition apparatus of the present embodiment, when substrate forms film, it can be held in a chamber
Row atomic layer deposition process or chemical vapor deposition process.Without in order to be formed in substrate by mutually different deposition procedures
Film and substrate is sent to mutually different chamber interior.Therefore, it is possible to prevent from substrate being sent to mutually different chamber
During room, substrate is contaminated or breakage occurs for substrate.Also, since a variety of deposition works can be executed in a chamber
Sequence, so as to shorten the time for forming multiple films on substrate.
Hereinafter, with reference to Fig. 2 and Fig. 3, the structure of the gas injector unit 10 of the present embodiment is specifically described.
With reference to Fig. 2 and Fig. 3, the first ejection section 100 and the second ejection section 300 of gas injector unit 10 can be along first party
To (X-direction) alignment.
First ejection section 100 may include the first jet module 110 and the second jet module 130, and a pair second sprays mould
Block 130 is respectively arranged in the two sides of the first jet module 110.Although illustrating the second jet module 130 in Fig. 2 and Fig. 3
It is arranged as a pair of situation, however the second jet module 130 can also only arrange one.As described above, the first ejection section 100 is used
In atomic layer deposition process, and source gas and reaction gas can be sprayed.
The first jet module 110 in first ejection section 100 can spray the first gas G1 as source gas.First spray
It may include first gas pipe 111, the first plasma generation electrode 113 and first exhaust portion 115 to penetrate module 110.
The first gas G1 that first gas pipe 111 can will be received from external supply is to the first plasma generation electrode
It transmits 113 sides.First gas pipe 111 can be formed completely through the form in hole as illustrated in fig. 3, can also be pipe (pipe) shape
State.
First plasma generation electrode 113 can be arranged in 111 lower part of first gas pipe, by first gas pipe 111
The first gas G1 transmitted is sprayed on substrate 30.First plasma generation electrode 113 can make the first gas being supplied
Body G1 is penetrated through and is sprayed on substrate 30.
With reference to Fig. 4 and Fig. 5, the first plasma generation electrode 113 may include first electrode main body 113a and multiple the
One through hole 113b.First electrode main body 113a can be the plate-like shape of the plane with quadrangle.First electrode main body
113a (Y direction) can extend in a second direction.
Also, multiple first through hole 113b can penetrate through first electrode main body 113a and be formed.Multiple first through holes
113b can be formed along third direction (Z-direction).That is, multiple first through hole 113b are along the direction shape perpendicular to substrate 30
At being sprayed on substrate 30 to allow first gas G1 to penetrate through the first through hole 113b.
First plasma generation electrode 113 can selectively make the first gas G1 of perforation become plasma shape
State.For example, in the case where making first gas G1 be sprayed to substrate 30 with plasmoid, the first plasma generation electrode
113 work, so as to make the first gas G1 of perforation become plasmoid.Also, without making first gas G1 become
In the case of for plasmoid, the first plasma generation electrode 113 does not work, and first gas G1 only merely penetrates through
One plasma generation electrode 113.First plasma generation electrode 113 can be with known in using in applied chemistry deposition procedures
Plasma generation electrode.
Referring again to Fig. 2 and Fig. 3, first exhaust portion 115 can be arranged in the week of the first plasma generation electrode 113
It encloses.First exhaust portion 115 can be such that the first gas G1 of the first plasma generation electrode of perforation 113 is discharged to outside.First
Exhaust portion 115 can prevent first gas G1 from being moved to adjacent 130 side of the second jet module.That is, first exhaust portion 115 can be with
Make not to be laminated in the remaining first gas G1 discharges on substrate 30.
In the present embodiment, first exhaust portion 115 may be arranged to surround the first plasma generation electrode 113.In Fig. 3
In, when being observed from the top down along third direction (Z-direction), first exhaust portion 115 can surround the first plasma and generate electricity
Pole 113.This can effectively stop the first gas G1 of the first plasma generation electrode 113 of perforation to the first jet module
110 outsides are mobile.The first gas G1 being discharged by first exhaust portion 115 can be by downtake pipe 115a to external storage
Case moves.
The second jet module 130 in first ejection section 100 can spray the second gas G2 as reaction gas.Second
Jet module 130 may include jet body 131, multiple injection nozzles 135 and second exhaust portion 139.
With reference to Fig. 6 and Fig. 7, sky of the receiving from the second gas G2 of outside supply can be formed inside jet body 131
Between 133, the second gas G2 inside space 133 is sprayed by multiple injection nozzles 135 on substrate 30.
(Y direction) extends jet body 131 in a second direction, and can be formed as item (bar) shape.In a second direction
The length for the jet body 131 that (Y direction) extends can be formed larger than the width of substrate 30.Therefore, when substrate 30 passes through
When the second 130 lower part of jet module, the second gas G2 sprayed by injection nozzle 135 can be uniformly deposited at substrate 30
On.Here, the width means of substrate 30 are in Fig. 1 along the length of the substrate 30 of second direction (Y direction).
Injection nozzle 135 can be vertically formed in 131 lower part of jet body with substrate 30.That is, injection nozzle 135 can be with
It is formed along third direction (Z-direction) in 131 lower part of jet body.At this point, multiple injection nozzles 135 can (Y in a second direction
Axis direction) alignment.
Injection nozzle 135 can be connected to the space 133 inside jet body 131, to make be located in space 133 the
Two gas G2 are sprayed by injection nozzle 135 to substrate 30.
Referring again to Fig. 2 and Fig. 3, second exhaust portion 139 can be arranged in around jet body 131.Second exhaust portion 139
The second gas G2 sprayed by injection nozzle 135 can be made to be discharged to outside.Identically as first exhaust portion 115, second row
Gas portion 139 can prevent second gas G2 from being moved to adjacent 110 side of the first jet module.That is, second exhaust portion 139 can make
The remaining second gas G2 not being laminated on substrate 30 is discharged to outside.
In the present embodiment, jet body 131 can be arranged in inside second exhaust portion 139.Finally, with first exhaust portion
115 in the same manner, and second exhaust portion 139 can also surround the jet body 131 of injection second gas G2.This can effectively stop
The second gas G2 sprayed by multiple injection nozzles 135 is to moving outside the second jet module 130.Pass through second exhaust portion
The second gas G2 of 139 discharges can be moved by second exhaust pipe 137 to external storage box.
In addition, in the present embodiment, first gas G1 and second gas G2 is mutually mixed in order to prevent, in the first ejection section
100 can arrange the first gas curtain gas (Curtain gas) ejection section 150 and the second gas curtain gas (Curtain gas) ejection section
170.It is respectively arranged first exhaust portion 115 and second exhaust portion 139 in the first jet module 110 and the second jet module 130, from
And stop that first gas G1 and second gas G2 are moved to other regions, and the first gas curtain gas jet portion 150 and the second gas curtain gas
Ejection section 170 can stop the first gas G1 not being discharged by first exhaust portion 115 and second exhaust portion 139 and second gas
G2 is moved to other regions.In figure 3, it is located at the gas curtain gas blowout on the boundary of the first jet module 110 and the second jet module 130
The portion of penetrating can be equivalent to the first gas curtain gas jet portion 150 and the second gas curtain gas jet portion 170.
First gas curtain gas jet portion 150 can be arranged in a manner of surrounding the first jet module 110 and be sprayed to substrate 30
Gas curtain gas N1.Gas curtain gas is the inert gas of argon gas or nitrogen etc., and can be not with the first gas as source gas
The gas that G1 or second gas G2 as reaction gas react to each other.
If gas curtain gas N1 is sprayed in the first gas curtain gas jet portion 150 for surrounding the first jet module 110, gas curtain gas N1 is played
Surround gas curtain (curtain) effect of the first jet module 110.By gas curtain gas N1, first gas G1 can be stopped to first
110 outside of jet module is mobile.
Second gas curtain gas jet portion 170 can be arranged in a manner of surrounding the second jet module 130 and be sprayed to substrate 30
Gas curtain gas N2.Gas curtain gas is the inert gas of argon gas or nitrogen etc., and can be not with the first gas as source gas
The gas that G1 or second gas G2 as reaction gas react to each other.
If gas curtain gas N2 is sprayed in the second gas curtain gas jet portion 170 for surrounding the second jet module 130, gas curtain gas N2 is played
Surround the effect of the gas curtain (curtain) of the second jet module 130.By gas curtain gas N2, second gas G2 can be stopped to
Two jet modules, 130 outside is mobile.
In the present embodiment, the second ejection section 300 may include second gas pipe 311, the second plasma generation electrode
313 and third exhaust portion 315.As described above, the second ejection section 300 can be used for chemical vapor deposition process.That is, the second injection
It portion 300 can be by SiH4+NH3+N2、SiH4+N2O、SiH4+O2It is sprayed to substrate 30 etc. plasmoid is become.At this point, this
Second ejection section 300 of embodiment can be identically formed with the first jet module 110 of the first ejection section 100.
The third gas P1 that second gas pipe 311 can will be received from external supply is to the second plasma generation electrode
It transmits 313 sides.Second gas pipe 311 can be formed completely through the form in hole as illustrated in fig. 3, can also be pipe (pipe) shape
State.Here, third gas P1 can be above-mentioned SiH4+NH3+N2、SiH4+N2O、SiH4+O2Deng.
Second plasma generation electrode 313 can be arranged in 311 lower part of second gas pipe, by second gas pipe 311
The third gas P1 transmitted is sprayed on substrate 30.Second plasma generation electrode 313 can make the third gas of supply
P1 is penetrated through and is sprayed on substrate 30.
Second plasma generation electrode 313 can have identical with the first above-mentioned plasma generation electrode 113
Structure.Second plasma generation electrode 313 may include that second electrode main body (not shown) and multiple second through holes (are not schemed
Show).Second electrode main body (not shown) can be the plate-like shape of the plane with quadrangle.Second electrode main body (not shown)
(Y direction) it can extend in a second direction.
Also, multiple second through holes (not shown) can penetrate through second electrode main body (not shown) and be formed.Multiple
Two through holes (not shown) can be formed along third direction (Z-direction).That is, multiple second through holes (not shown) can be along vertical
It is directly formed in the direction of substrate 30, is sprayed on substrate 30 to make third gas P1 penetrate through the second through hole (not shown).
Second plasma generation electrode 313 can make the third gas P1 of perforation become plasmoid.For example,
In the case of so that third gas P1 is sprayed to substrate 30 with plasmoid, the work of the second plasma generation electrode 313, from
And the third gas P1 of perforation can be made to become plasmoid.Second plasma generation electrode 313 can be with applied chemistry
The well known plasma generation electrode used in deposition procedures.
Referring again to Fig. 2 and Fig. 3, third exhaust portion 315 can be arranged in the week of the second plasma generation electrode 313
It encloses.Third exhaust portion 315 can be such that the third gas P1 of the second plasma generation electrode of perforation 313 is discharged to outside.Third
Exhaust portion 315 can prevent third gas P1 from being moved to adjacent 100 side of the first ejection section.That is, third exhaust portion 315 can make
The remaining third gas P1 discharges not being laminated on substrate 30.
In the present embodiment, third exhaust portion 315 may be arranged to surround the second plasma generation electrode 313.In Fig. 3
In, when being observed from the top down along third direction (Z-direction), third exhaust portion 315 can surround the second plasma and generate electricity
Pole 313.This can effectively stop the third gas P1 of the second plasma generation electrode 313 of perforation to the second ejection section 300
Outside is mobile.The third gas P1 being discharged by third exhaust portion 315 can be by third exhaust pipe 315a to external storage box
It is mobile.
In addition, in the present embodiment, can arrange third gas curtain gas jet portion 317 in the second ejection section 300 to prevent
Two gas G2 and third gas P1 is mixed with each other.It is disposed with third exhaust portion 315 in the second ejection section 300, to stop third
Gas P1 is moved to other regions, and third gas curtain gas jet portion 317 can stop the not be discharged by third exhaust portion 315
Three gas P1 are moved to other regions.
Third gas curtain gas jet portion 317 can be arranged in a manner of surrounding the second ejection section 300 and spray gas to substrate 30
Curtain gas M2.Gas curtain gas can be the inert gas of argon gas or nitrogen etc..
If gas curtain gas M2 is sprayed in the third gas curtain gas jet portion 317 for surrounding the second ejection section 300, gas curtain gas M2 plays packet
Enclose the effect of the gas curtain (curtain) of the second ejection section 300.By gas curtain gas M2, third gas P1 can be stopped to the second spray
It is mobile to penetrate 300 outside of portion.
In addition, in the present embodiment, substrate transferring unit 50 can transmit substrate 30 and substrate 30 is made to pass through gas injection
10 lower part of unit.At this point, substrate transferring unit 50 can make the interval H between substrate 30 and gas injector unit 10 maintain perseverance
In fixed range.It can be 1.5mm~4mm to be spaced H.
As described above, in the film deposition apparatus of the present embodiment, the first ejection section 100 can be used for atomic layer deposition
(Atomic Layer Deposition) process, the second ejection section 300 can be used for chemical vapor deposition (Chemical
Vapor Deposition) process.That is, the first ejection section 100 can be injected in the reaction gas used in atomic layer deposition process
Body and source gas, the second ejection section 300 can be injected in the gas used in chemical vapor deposition process with plasmoid.
However, the film deposition apparatus of the present embodiment is not limited to the first ejection section 100 and the second ejection section 300 is only divided
Not Yong Yu atomic layer deposition process and chemical vapor deposition process situation.
First ejection section 100 can be used for chemical vapor deposition process.I.e., it is possible to by the first ejection section 100 and second
Ejection section 300 is all used in chemical vapor deposition process.More specifically, in the first jet module 110 of the first ejection section 100
It is disposed with the first plasma generation electrode 113, it, can be with the second spray if the first plasma generation electrode 113 is made to work
It penetrates portion 300 and is used for chemical vapor deposition process in the same manner.At this point, without using the second jet module 130 of the first ejection section 100.
Therefore, if using the first ejection section 100 the first jet module 110 and the second ejection section 300, can passing through
It learns vapor deposition process and forms film in substrate 30.At this point, if the first jet module 110 and the second ejection section 300 use mutually not
Identical gas then can sequentially form mutually different film in substrate 30.For example, the first jet module 110 can spray
Silicon nitride (SiNx indicates arbitrary integer in this x), the second ejection section 300 can spray silica, and (SiOx indicates to appoint in this x
The integer of meaning).Finally, when substrate 30 is by 10 lower part of gas injector unit, the first jet module 110 can be in 30 shape of substrate
At silicon nitride film, the second ejection section 300 can form silicon oxide film on silicon nitride film.
Alternatively, it is also possible to which the first ejection section 100 and the second ejection section 300 are all used in atomic layer deposition process.Also may be used
To spray reaction gas from the first jet module 110 of the first ejection section 100, source gas is sprayed from the second ejection section 300, to
Execute atomic layer deposition process.
And it is possible to use the first ejection section 100, the use when carrying out plasma treatment in chemical vapor deposition process
Second ejection section 300.For example, the first plasma generation electrode can be made in the first jet module 110 of the first ejection section 100
113 work, to spray silicon nitride on substrate 30 with plasmoid (SiNx indicates arbitrary integer in this x).And
And the second ejection section 300 can be made not spray gas, and the second plasma generation electrode 313 is made to work, to passing through the
The silicon nitride film that one jet module 110 is formed on substrate 30 carries out plasma treatment.Plasma treatment is at the surface of film
One kind in reason method can be equivalent to the process for improving the quality of film by surface modification.
It, can be in a chamber simultaneously when substrate forms film for the film deposition apparatus of the present embodiment
Or selectively execute atomic layer deposition process or chemical vapor deposition process.
As described above, by the embodiment and attached drawing of restriction, the present invention is described, but the present invention is not limited to
This, the present invention belonging to technical field in basic knowledge people can with the present invention technological thought and be recorded in right
Various amendment and deformation are realized in the equivalent range of range in claim.
Claims (20)
1. a kind of film deposition apparatus, wherein including：
Gas injector unit includes spraying the first of mutually different deposition gases along first direction alignment to substrate and spraying
Portion and the second ejection section are penetrated,
Wherein, first ejection section includes：
First jet module sprays first gas；And
Second jet module, at least one side being arranged in the two sides on the first direction of first jet module,
And second gas is sprayed,
First jet module includes：
First gas pipe supplies the first gas；And
First plasma generation electrode is arranged in below the first gas pipe, so that the first gas is penetrated through and is made described
First gas is sprayed to the substrate,
Second jet module includes：
Jet body is disposed with the space for accommodating the second gas in inside；And
Multiple injection nozzles are arranged in the lower section of the jet body, and spray the second gas being located in the space.
2. film deposition apparatus as described in claim 1, wherein
First jet module further includes：
First exhaust portion arranges adjacent to first plasma generation electrode, and the first gas is discharged.
3. film deposition apparatus as claimed in claim 2, wherein
When observing in the plane, the first exhaust portion surrounds first plasma generation electrode.
4. film deposition apparatus as claimed in claim 2, wherein
First plasma generation electrode is the plate-like shape for having quadrangular plan.
5. film deposition apparatus as claimed in claim 4, wherein
First plasma generation electrode extends along the second direction intersected with the first direction.
6. film deposition apparatus as claimed in claim 5, wherein
First plasma generation electrode has multiple first through holes penetrated through along third direction, the third direction
Intersect with the first direction and second direction.
7. film deposition apparatus as described in claim 1, wherein
First ejection section further includes：First gas curtain gas jet portion surrounds first jet module, and is sprayed to the substrate
It emanates curtain gas.
8. film deposition apparatus as claimed in claim 7, wherein
First ejection section further includes：Second gas curtain gas jet portion surrounds second jet module, and is sprayed to the substrate
It emanates curtain gas.
9. film deposition apparatus as described in claim 1, wherein
Second jet module further includes：Second exhaust portion arranges adjacent to the jet body, and is discharged described second
Gas.
10. film deposition apparatus as claimed in claim 9, wherein
The jet body is arranged in inside the second exhaust portion.
11. film deposition apparatus as claimed in claim 10, wherein
The jet body extends along the second direction intersected with the first direction.
12. film deposition apparatus as described in claim 1, wherein
Second ejection section includes：
Second gas pipe supplies third gas；And
Second plasma generation electrode is arranged in below the second gas pipe, so that the third gas is penetrated through and is made described
Third gas is sprayed to the substrate.
13. film deposition apparatus as claimed in claim 12, wherein
Second ejection section further includes：
Third exhaust portion arranges adjacent to second plasma generation electrode, and the third gas is discharged.
14. film deposition apparatus as claimed in claim 12, wherein
Second plasma generation electrode is the plate-like shape for having quadrangular plan.
15. film deposition apparatus as claimed in claim 14, wherein
Second plasma generation electrode extends along the second direction intersected with the first direction.
16. film deposition apparatus as claimed in claim 15, wherein
Second plasma generation electrode has multiple second through holes penetrated through along third direction, the third direction
Intersect with the first direction and second direction.
17. film deposition apparatus as claimed in claim 12, wherein
Second ejection section further includes：
Third gas curtain gas jet portion surrounds second plasma generation electrode, and sprays gas curtain gas to the substrate.
18. film deposition apparatus as described in claim 1, wherein
The first gas is the source gas applied to atomic layer deposition process,
The second gas is the reaction gas applied to atomic layer deposition process.
19. film deposition apparatus as claimed in claim 12, wherein
The third gas is the gas applied to chemical vapor deposition process.
20. film deposition apparatus as described in claim 1, wherein further include：
Substrate transferring unit supports the substrate, and transmits the substrate along the first direction.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2017-0022377 | 2017-02-20 | ||
| KR1020170022377A KR20180096853A (en) | 2017-02-20 | 2017-02-20 | Thin film deposition apparatus |
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| CN108456872A true CN108456872A (en) | 2018-08-28 |
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| CN201810153835.9A Pending CN108456872A (en) | 2017-02-20 | 2018-02-22 | Film deposition apparatus |
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| KR20210052636A (en) | 2019-10-29 | 2021-05-11 | 삼성디스플레이 주식회사 | Display apparatus |
| KR20210113487A (en) | 2020-03-05 | 2021-09-16 | 삼성디스플레이 주식회사 | display apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040070481A (en) * | 2003-02-03 | 2004-08-11 | 삼성전자주식회사 | Apparatus and method for forming dielectric layers |
| CN101589171A (en) * | 2006-03-03 | 2009-11-25 | 普拉萨德·盖德吉尔 | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
| CN101919030A (en) * | 2007-11-02 | 2010-12-15 | 佳能安内华股份有限公司 | Substrate cleaning method for removing oxide film |
| CN105849309A (en) * | 2013-09-16 | 2016-08-10 | 科恩艾斯恩株式会社 | Atomic layer deposition device having scan-type reactor and method therefor |
-
2017
- 2017-02-20 KR KR1020170022377A patent/KR20180096853A/en active IP Right Grant
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2018
- 2018-02-22 CN CN201810153835.9A patent/CN108456872A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040070481A (en) * | 2003-02-03 | 2004-08-11 | 삼성전자주식회사 | Apparatus and method for forming dielectric layers |
| CN101589171A (en) * | 2006-03-03 | 2009-11-25 | 普拉萨德·盖德吉尔 | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
| CN101919030A (en) * | 2007-11-02 | 2010-12-15 | 佳能安内华股份有限公司 | Substrate cleaning method for removing oxide film |
| CN105849309A (en) * | 2013-09-16 | 2016-08-10 | 科恩艾斯恩株式会社 | Atomic layer deposition device having scan-type reactor and method therefor |
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Application publication date: 20180828 |