CN107393810B - A kind of preparation method of oxide semiconductor thin-film - Google Patents
A kind of preparation method of oxide semiconductor thin-film Download PDFInfo
- Publication number
- CN107393810B CN107393810B CN201710570025.9A CN201710570025A CN107393810B CN 107393810 B CN107393810 B CN 107393810B CN 201710570025 A CN201710570025 A CN 201710570025A CN 107393810 B CN107393810 B CN 107393810B
- Authority
- CN
- China
- Prior art keywords
- film
- solution
- preparation
- substrate
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of preparation methods of oxide semiconductor thin-film, preparation method includes the following steps: that semiconductor Colloidal Quantum Dots solution is placed in electrostatic spinning platform by (1), the added electric field between nozzle and substrate, make solution aerosol dispersion, atomized liquid homogeneous film formation on an insulating substrate；(2) quantum dot film is handled with short chain ligand solution, to displace the long-chain oleic acid on quantum dot film surface；(3) removal remaining short chain ligand and its by-product；(4) annealing is executed to film formed by atomized liquid in set temperature range and the time range of setting, obtains oxide semiconductor thin-film.In the above method, it can form a film in rigidity or flexible substrate.The preparation method is convenient for adjusting each component quality proportioning in solution, to change thin film composition, oxide semiconductor thin-film is prepared and studied for laboratory and provides new preparation method and thinking, and provides possible approach for large-scale production.
Description
Technical field
The invention belongs to technical field of semiconductor film preparation, more particularly, to one kind with colloidal oxide quantum dot
Solution is the transparent oxide semiconductor thin film preparation method of material.
Background technique
Tin indium oxide (ITO) is used as N-type wide band gap semiconducter oxide, has high visible light transmissivity and high conductivity,
It is widely used in various flat-panel monitors (FEDs), Organic Light Emitting Diode (OLED), touch screen panel, solar battery, gas
The fields such as body sensor.It is high to microwave attenuation rate, it can also be used to electromagnetic interference.The ratio and heat treatment temperature of tin and indium are to thin
The electric conductivity of film has great influence, and the industrial proportion using indium oxide and tin oxide mass ratio 9:1 prepares film.
Currently, most widely used ito thin film preparation method is magnetron sputtering.The technique is suitable for continuous system on substrate
Standby ito thin film and film forming thickness it is uniform, it is reproducible, be suitable for large-scale industrial production.
The Kim etc. in South Korea's Quan Bei national university thin film technique laboratory is deposited ito thin film using radio-frequency magnetron sputter method
Onto PET base, having obtained resistivity is 1.9 × 10-3Ω cm, ito thin film [the Kim Y, Park that light transmission rate is 80%
Y,Ansari S G,et al.Influence of O2admixture and sputtering pressure on the
properties of ITO thin films deposited on PET substrate using RF reactive
magnetron sputtering[J].Surface&Coatings Technology,2003,173(2):299-308.].It is public
The number of opening is 102324271A, describes one kind in the Chinese patent application of the artificial Nanchang O-film Tech. Co., Ltd. of application with saturating
Bright polymer is the crystal type transparent conductive film and preparation method thereof of substrate.The upper surface of transparent conductive film on substrate
There is one or two layers optical thin film, is prepared for ito thin film, visible light with low temperature magnetic sputtering method in optical thin film outermost layer
Average transmittance 88% in range, it is maximum up to 94%.
However, magnetically controlled DC sputtering is higher to the vacuum level requirements of equipment, therefore also constrain quantity-produced realization.Film
Photoelectric properties it is more sensitive to the variation of various sputtering parameters, therefore process adjustments are relatively difficult.Also, sputter target used
Utilization rate is lower, and only 20% or so.If using radio-frequency magnetron sputter method instead, though process adjustments can be made simpler, ceramic target
Complex manufacturing technology thus be not easy to flexible modulation reactant composition, and that the device is complicated is expensive, and deposition rate is low, radio-frequency radiation
There is adverse effect to human body.
In addition, University of Electronic Science and Technology Yuan Hongmei, Lin Zulun et al. are reported using indium nitrate and acetylacetone,2,4-pentanedione (analysis is pure)
For raw material, five hydrous tin chlorides (analysis is pure) are the colloidal sol that dopant prepares transparent conductive film in simple glass substrate
Gel method realizes the resistivity of 10k Ω m and transmissivity [Yuan Hongmei, et al. " the sol-gel method preparation ITO of 82-87%
Research " the electronic device 33.1 (2010) of film and its photoelectric properties: 5-9].But this method only has at the same time suitably mixes
It can just be prepared in the case where Sn ratio, concentration of metal ions big as far as possible, pull rate appropriate, temperature as high as possible excellent
Good ito thin film, technology controlling and process are complicated.
Therefore, it is necessary to develop a kind of novel method for preparing oxide semiconductor thin-film, it is desirable that and its preparation process is simple,
It can be mass produced.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of transparent oxide semiconductor thin films
Preparation method, this method use electrospinning Printing techniques, can use rigidity or flexible substrate, manufacture craft is simple, is suitable for
Laboratory preparation research ito thin film and large-scale production, this method have a good application prospect.
To achieve the above object, according to one aspect of the present invention, a kind of preparation of oxide semiconductor thin-film is provided
Method, which comprises the steps of:
(1) semiconductor Colloidal Quantum Dots solution is placed in electrostatic spinning platform, electrostatic spinning platform includes nozzle, substrate
And insulating substrate, apply high direct voltage between nozzle and substrate to form electric field, electric field makes solution aerosol dispersion, and atomized liquid is exhausted
Homogeneous film formation on edge substrate obtains quantum dot film；
(2) quantum dot film is handled with short chain ligand solution, to displace the long-chain oleic acid of quantum dot surface；
(3) removal remaining short chain ligand and its by-product；
(4) annealing is executed to film formed by atomized liquid in set temperature range and the time range of setting, obtained
Oxide semiconductor thin-film acquires the oxide with setting thickness specifically, annealing 2-8 hours at 200 DEG C -500 DEG C
Colloidal Quantum Dots film.
In the above inventive method, film is prepared using electrospinning spray printing method, electrospinning spray printing method refers to equipped with semiconductor colloid
Apply high direct voltage between the capillary and ground connection reception device of quantum dot solution, capillary end droplet surface is made to rupture to form spray
Colloidal Quantum Dots are deposited on the method that film is prepared in substrate by mist.
Preferably, the semiconductor Colloidal Quantum Dots solution is In2O3Colloidal Quantum Dots solution, SnO2Colloidal Quantum Dots are molten
The mixed solution of liquid or both.
Preferably, the insulating substrate is paper, plastics, glass or ceramics.
Preferably, the short chain ligand solution is Cu (CH3COO)2、Cu(NO3)2Or SnCl4Solution.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, have below beneficial to effect
Fruit:
The present invention prepares film using electrospinning spray printing method, can prepare transparent oxide semiconductor thin film at room temperature, only exist
Last heat treatment stages need the annealing of certain temperature.Prepare whole low energy consumption, economical environment-protective.It makes under atmospheric pressure
Standby film, is not required to be vacuum-treated, and realizes continuous production convenient for industrial circle.Its preparation process speed is fast, stock utilization is high.
Moreover, transparent oxide semiconductor thin film not only can be using conventional heat-resist ceramics, silicon wafer or glass
Etc. rigid substrates, can also be using the relatively poor flexible substrate of heat resistances such as plastics, paper, manufacture craft is simple, is flexible aobvious
Show that the production application of panel provides possibility.
The present invention by deploy solution can easily and flexibly adjust indium oxide and tin oxide mass ratio and cost compared with
It is low.Usable this method obtains meeting requirement of the different occasions to the transmissivity and sheet resistance of conductive oxide film, then by gained
Mass ratio is applied to adapt to the needs of industrialized production in the preparation of magnetic control spattering target.In view of target used in magnetron sputtering method
The raw material of material and somewhat expensive is prepared, this method has reference significance to target used in magnetron sputtering is prepared.
Detailed description of the invention
Fig. 1 is equipment schematic diagram used in present invention method, and the equipment schematic diagram is for illustrating present invention side
Method preparation process；
Fig. 2 is that syringe nozzle goes out to spray the enlarged diagram of Colloidal Quantum Dots solution in Fig. 1；
Fig. 3 is scanning electron microscope (SEM) photo that sample is made in embodiment of the present invention method.
In all the appended drawings, identical appended drawing reference indicates identical structure or components from beginning to end, wherein
1- colloidal state quantum dot 2- nozzle 3- DC high-voltage power supply
4- substrate 5- syringe
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
In the present invention, creative be applied to electrospinning spray printing method prepares transparent oxide semiconductor thin film, can overcome existing
Some prepares the number of drawbacks of oxide semiconductor thin-film method.
Electrospinning spray printing method is a kind of new method for preparing nano material, there is raw material synthesis to carry out in the solution, equipment
It is low in cost, condition film thickness simple and easy to get and more uniform needed for forming a film, and the dosage, speed and the film thickness that spray film forming can
The advantages that being mass produced may be implemented in control.Its principle is: in the capillary of the solution equipped with thin film composition and connecing for ground connection
Several kilovolts of high direct voltage is added between receiving apparatus, that is, substrate, the droplet surface for keeping capillary end hemispherical, which ruptures to be formed, penetrates
Stream, deposits in substrate and forms a film.At present there are many nanofiber can be prepared and be applied to method of electrostatic spinning laser material,
The fields such as sensor and single-molecule detection.
Fig. 1 is equipment schematic diagram used in present invention method, and the equipment schematic diagram is for illustrating present invention side
Method preparation process, Fig. 2 are that syringe nozzle goes out to spray the enlarged diagram of Colloidal Quantum Dots solution in Fig. 1.As seen from the figure, it wraps
Include colloidal state quantum dot 1, nozzle 2, DC high-voltage power supply 3, substrate 4 and syringe 5, which is used to prepare of the invention transparent
Oxide semiconductor thin-film is injected specifically, semiconductor Colloidal Quantum Dots 1 (it is solution) are placed in electrostatic spinning platform
Device 5, the added electric field between nozzle 2 and substrate, the electric field are loaded by DC high-voltage power supply 3, make solution aerosol dispersion, atomized liquid exists
Homogeneous film formation on the substrate 4 of insulation, using subsequent processing, available transparent conductive oxide film.
The preparation method of transparent oxide semiconductor thin film of the invention includes the following steps:
(1) semiconductor Colloidal Quantum Dots solution is coated in and is printed in the insulating substrate of electrode, make its homogeneous film formation.Specifically
Ground, Colloidal Quantum Dots are coated in a manner of electrospinning spray printing form a film on substrate at room temperature.
(2) quantum dot film is handled with short chain ligand solution, to displace the long-chain oleic acid of quantum dot surface.
(3) removal remaining short chain ligand and its by-product.
(4) it anneals 2-8 hours at 200 DEG C -500 DEG C, completes the preparation of oxide semiconductor thin-film.
Transparent oxide semiconductor thin film of the invention includes: insulating substrate and oxide skin(coating).Oxide skin(coating) is semiconductor
Colloidal Quantum Dots film, specially In2O3Colloidal Quantum Dots film, SnO2Colloidal Quantum Dots film or the two epoxy glue scale of construction
Son point film.Insulating substrate can be paper, glass, plastics or ceramics, be also possible to rigid substrate or flexible substrate.
In order to enable those skilled in the art to better understand the present invention, combined with specific embodiments below to colloid amount of the invention
The preparation method of son point film oxide semiconductors film is described in detail.
Embodiment 1
(1) In is prepared2O3Colloidal Quantum Dots solution.It uses indium acetate as indium source, is reacted and generated using colloid synthetic method.
Specifically, 0.876g indium acetate is dissolved into the oleic acid (OA) of 10mL and is heated with stirring to 150 DEG C.It is evacuated to
After bubble-free, nitrogen is led into container, 240 DEG C are warming up in nitrogen atmosphere, reacted 30 minutes at this temperature.Natural cooling
In can be obtained to room temperature2O3Nano particle.Cleaned with ethyl alcohol, after with 8000rpm centrifugation 10 minutes, gained nano particle is dissolved in
Hexane.
(2) SnO is prepared2Colloidal Quantum Dots solution.Use SnCl4As zinc source, is reacted and generated using colloid synthetic method.
Specifically, by 0.6g SnCl4·5H2It is transparent that O is dissolved into formation in 20mL oleic acid (OA) and 2.5mL oleyl amine (OLA)
Mixed solution prepare the presoma of Sn.By 1mL H2The mixed liquor is added in O and 10mL ethyl alcohol under slow stirring.By solution
It is transferred in the stainless steel autoclave of 50mL teflon lined, is reacted 3 hours at 180 DEG C, rear cold bath is cooled to room
Temperature.80mL ethyl alcohol is added with 6000rpm centrifugation 5 minutes with separation product.Sediment is dispersed in toluene and after ethyl alcohol is added
Centrifugation, is repeated twice.
(3) indium oxide and tin oxide Colloidal Quantum Dots solution are mixed according to Solute mass ratio 85:15, using electrospinning spray printing
Method is coated to glass substrate surface with the fltting speed of 1500nL/min；The stannic chloride for being 10mg/mL by membranes submerged to concentration
(SnCl4) methanol solution in, remaining SnCl is washed away with anhydrous methanol after infiltrating 60s4Particle and its byproduct of reaction, infiltration
60s；The substrate of coated film is annealed 2 hours at 300 DEG C, room temperature is naturally cooled to, completes oxide semiconductor thin-film
Preparation.
Embodiment 2
In prepared by embodiment 12O3And SnO2Colloidal Quantum Dots solution is mixed according to Solute mass ratio 90:10, using electricity
It spins spray printing method and silicon chip substrate surface is coated to the fltting speed of 1500nL/min；It is 10mg/mL's by membranes submerged to concentration
Cu(NO3)2Methanol solution in, remaining SnCl is washed away with anhydrous methanol after infiltrating 60s4Particle and its byproduct of reaction, infiltration
60s；The substrate of coated film is annealed 8 hours at 500 DEG C, room temperature is naturally cooled to, completes oxide semiconductor thin-film
Preparation.
Embodiment 3
In prepared by embodiment 12O3And SnO2Colloidal Quantum Dots solution is mixed according to Solute mass ratio 95:5, using electricity
It spins spray printing method and ceramic substrate surface is coated to the fltting speed of 1500nL/min；It is 10mg/mL's by membranes submerged to concentration
Stannic chloride (SnCl4) methanol solution in, remaining SnCl is washed away with anhydrous methanol after infiltrating 60s4Particle and its reaction by-product
Object infiltrates 60s；The substrate of coated film is annealed 6 hours at 400 DEG C, naturally cools to room temperature, completes oxide semiconductor
The preparation of film.
Embodiment 4
In prepared by embodiment 12O3And SnO2Colloidal Quantum Dots solution is mixed according to Solute mass ratio 95:5, using electricity
It spins spray printing method and paper gasket bottom surface is coated to the fltting speed of 1500nL/min；The Cu for being 10mg/mL by membranes submerged to concentration
(CH3COO)2Methanol solution in, remaining SnCl is washed away with anhydrous methanol after infiltrating 60s4Particle and its byproduct of reaction, leaching
Moisten 60s；The substrate for coating ito thin film is annealed 4 hours at 200 DEG C, naturally cools to room temperature, it is thin to complete oxide semiconductor
The preparation of film.
The oxide semiconductor thin-film of various embodiments of the present invention preparation and the oxide half of existing magnetron sputtering method preparation
Conductor thin film is compared, and the requirement of transmissivity and sheet resistance has been substantially met.
Fig. 3 is scanning electron microscope (SEM) photo that sample is made in embodiment of the present invention method 3, as seen from the figure,
The oxide semiconductor thin-film of preparation has loose and porous structure, and gas molecule is easy disengaging, in gas sensor preparation field
There is potential application foreground.
Oxide semiconductor thin-film preparation method of the invention is not limited to above-described embodiment, specifically, oxide half
Colloidal Quantum Dots film in conductor thin film is not limited to In2O3Colloidal Quantum Dots film or SnO2Colloidal Quantum Dots film, can also
To be other semiconductor Colloidal Quantum Dots films.Colloidal Quantum Dots solution in preparation method is not limited to In2O3Colloidal Quantum Dots
Solution or SnO2Colloidal Quantum Dots solution is also possible to other semiconductor Colloidal Quantum Dots solution.Insulating substrate is not limited to
Paper, glass, plastics or ceramics are also possible to other insulating substrates.Short chain ligand solution is not limited to SnCl4Solution, can also
To be other short chain inorganic matters or organic matter ligand solution, such as Cu (NO3)2Solution.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (3)
1. a kind of preparation method of oxide semiconductor thin-film, which comprises the steps of:
(1) semiconductor Colloidal Quantum Dots solution being placed in electrostatic spinning platform, electrostatic spinning platform includes nozzle and substrate,
Apply high direct voltage between nozzle and substrate to form electric field, electric field makes solution aerosol dispersion, and atomized liquid is in the insulation for being placed in substrate
Homogeneous film formation on substrate obtains quantum dot film；
(2) quantum dot film is handled with short chain ligand solution, to displace the long-chain oleic acid on quantum dot film surface, the short chain
Ligand solution is copper acetate, copper nitrate or tin chloride solution；
(3) removal remaining short chain ligand and its by-product；
(4) annealing is executed to film formed by atomized liquid in set temperature range and the time range of setting, is aoxidized
Object semiconductive thin film obtains the oxide colloid amount with setting thickness specifically, annealing 2-8 hours at 200 DEG C -500 DEG C
Son point film.
2. the preparation method of oxide semiconductor thin-film described in claim 1, which is characterized in that the oxide colloid quantum
Point solution is the mixed solution of indium oxide Colloidal Quantum Dots solution, tin oxide Colloidal Quantum Dots solution or both.
3. the preparation method of oxide semiconductor thin-film described in claim 1, which is characterized in that the insulating substrate be paper,
Plastics, ceramics, silicon wafer or glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710570025.9A CN107393810B (en) | 2017-07-13 | 2017-07-13 | A kind of preparation method of oxide semiconductor thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710570025.9A CN107393810B (en) | 2017-07-13 | 2017-07-13 | A kind of preparation method of oxide semiconductor thin-film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107393810A CN107393810A (en) | 2017-11-24 |
| CN107393810B true CN107393810B (en) | 2019-06-18 |
Family
ID=60340131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710570025.9A Active CN107393810B (en) | 2017-07-13 | 2017-07-13 | A kind of preparation method of oxide semiconductor thin-film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107393810B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108165990A (en) * | 2018-01-22 | 2018-06-15 | 京东方科技集团股份有限公司 | Quantum dot film plating process and system |
| CN108906524B (en) * | 2018-07-14 | 2022-01-18 | 福州大学 | Method for encapsulating quantum dot light guide plate based on electrostatic atomization film forming |
| CN110224074A (en) * | 2018-12-29 | 2019-09-10 | 华南理工大学 | A kind of quanta point electroluminescent device and preparation method thereof |
| CN110187061B (en) * | 2019-06-03 | 2022-03-25 | 西安奕斯伟材料科技有限公司 | Processing method, detection method and processing device for silicon wafer |
| CN110773341A (en) * | 2019-10-14 | 2020-02-11 | 大族激光科技产业集团股份有限公司 | Atomization cooling device, automatic processing equipment and method |
| CN112111783A (en) * | 2020-10-14 | 2020-12-22 | 天津工业大学 | Electrostatic atomization chemical vapor deposition gallium oxide film system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6670213B2 (en) * | 2001-10-10 | 2003-12-30 | Cambridge Display Technology Limited | Method of preparing photoresponsive devices, and devices made thereby |
| US6849798B2 (en) * | 2002-12-17 | 2005-02-01 | General Electric Company | Photovoltaic cell using stable Cu2O nanocrystals and conductive polymers |
| CN104091693A (en) * | 2014-07-03 | 2014-10-08 | 北京科技大学 | Method for preparing Cd1-xMnxSe quantum dot solar cell |
| CN105185695A (en) * | 2015-08-21 | 2015-12-23 | 京东方科技集团股份有限公司 | Oxide semiconductor film preparation method and thin film transistor preparation method |
-
2017
- 2017-07-13 CN CN201710570025.9A patent/CN107393810B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6670213B2 (en) * | 2001-10-10 | 2003-12-30 | Cambridge Display Technology Limited | Method of preparing photoresponsive devices, and devices made thereby |
| US6849798B2 (en) * | 2002-12-17 | 2005-02-01 | General Electric Company | Photovoltaic cell using stable Cu2O nanocrystals and conductive polymers |
| CN104091693A (en) * | 2014-07-03 | 2014-10-08 | 北京科技大学 | Method for preparing Cd1-xMnxSe quantum dot solar cell |
| CN105185695A (en) * | 2015-08-21 | 2015-12-23 | 京东方科技集团股份有限公司 | Oxide semiconductor film preparation method and thin film transistor preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107393810A (en) | 2017-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107393810B (en) | A kind of preparation method of oxide semiconductor thin-film | |
| CN101203948B (en) | Method of preparing zinc oxide nanorods on a substrate by chemical spray pyrolysis | |
| CN105706243B (en) | Metal-oxide semiconductor (MOS) film, thin film transistor (TFT), display device, imaging sensor and X ray sensor | |
| CN105821378B (en) | A kind of niobium doping stannic oxide transparent conductive film and preparation method thereof | |
| US20210253433A1 (en) | Method for forming graphene film through horizontally tiling and self-assembling graphene | |
| CN104752546A (en) | Metal oxide ultraviolet detector and preparation method thereof | |
| CN111286054B (en) | Poly-4-methylpentene and SiO2Microsphere composite film and preparation method thereof | |
| Hsu et al. | Deposition of transparent and conductive ZnO films by an atmospheric pressure plasma-jet-assisted process | |
| CN104540777B (en) | For forming the core-shell nanoparticles of nesa coating and using its manufacture method of nesa coating | |
| TW201029942A (en) | Electrostatically depositing conductive films during glass draw | |
| CN108511133B (en) | Preparation method of transfer-free high-cohesiveness metal grid transparent electrode | |
| CN100432284C (en) | Production of tin-doped indium oxide ITO thin film by electronic beam evaporation | |
| CN104479461A (en) | Nanocrystal conductive ink and preparation method thereof | |
| KR20110135612A (en) | Processing of fto film on physically stabilized ultra-flexible thin substrate | |
| CN108091414A (en) | A kind of nano silver wire compound transparent electricity conductive film and its preparation | |
| JP3803592B2 (en) | Low resistance transparent conductive film and method for producing the same | |
| CN103924191A (en) | Method for plating ITO thin film on substrate | |
| CN109819535B (en) | Preparation method of high-temperature service silver nanowire conductive film heater | |
| KR20170020602A (en) | A far infrared ray heating element | |
| CN116371703B (en) | Preparation method of ITO film suitable for flexible substrate and ITO film | |
| WO2009105187A1 (en) | Conductive film formation during glass draw | |
| CN104726851B (en) | A kind of method that sol-gal process prepares p-type SnO 2 thin film material | |
| JP4170639B2 (en) | Low resistance transparent conductive film manufacturing method | |
| CN106653858A (en) | Solution method for preparing high-mobility indium-zirconium-oxide thin film transistor at low temperature | |
| CN116469614A (en) | Flexible high-conductivity composite film based on MXene/silver nanowires and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |