CN107275221A - The manufacture method of super-junction device - Google Patents
The manufacture method of super-junction device Download PDFInfo
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- CN107275221A CN107275221A CN201710519172.3A CN201710519172A CN107275221A CN 107275221 A CN107275221 A CN 107275221A CN 201710519172 A CN201710519172 A CN 201710519172A CN 107275221 A CN107275221 A CN 107275221A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 105
- 229920005591 polysilicon Polymers 0.000 claims abstract description 81
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 230000004907 flux Effects 0.000 claims abstract description 6
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 15
- 238000002513 implantation Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000407 epitaxy Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000013517 stratification Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 4
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- 238000009792 diffusion process Methods 0.000 description 2
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- 230000006872 improvement Effects 0.000 description 2
- 238000001727 in vivo Methods 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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Abstract
The invention discloses a kind of manufacture method of super-junction device, including step：Step 1: providing a N-type semiconductor epitaxial layer and forming the super junction groove of multiple periodic arrangements；Step 2: carrying out trench fill forms p-type post, filling, which uses multiple polycrystalline silicon deposit and repeatedly injection and polysilicon time is carved after polysilicon is filled up and p type single crystal silicon is carried out, deposits realization, and the dosage of the injection of polysilicon is gradually reduced from top to bottom；Step 3: the p type impurity pick into the polysilicon for making p-type post is diffused to realize that uniform concentration gradient is distributed and makes the doping of p-type post and N-type post at each lengthwise position flux matched in p-type cylinder.The present invention can offset etching technics and limit the inverted trapezoidal super junction groove to be formed to super junction charge matching adverse effect, the charge matching degree of super junction can be improved, so as to improve the breakdown voltage of device；The present invention can also prevent source region break-through by the setting of the p type single crystal silicon at top, improve the performance of device.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit manufacture method, more particularly to a kind of manufacturer of super-junction device
Method.
Background technology
The principle that power device is pressure-resistant is that the drift region (drift region) of device is low-doped, makes device in high voltage
When the depletion region of large area can be produced to reach pressure-resistant effect.Because vertical device possesses thicker drift region, therefore
In high-voltage applications, vertical device is preferably to select.
In combination with VDMOS, low-loss and IGBT in switch are being turned on super junction (Super Junction) device
The low-loss advantage of state, is widely applied with excellent performance.
Super junction in super-junction device is made up of the p-type post and N-type post being alternately arranged, and is typically employed in N-type extension
Super junction groove is formed in layer such as N-type silicon epitaxy layer, p-type epitaxial layer such as P-type silicon epitaxial layer is filled in super junction groove afterwards
Realize.
As shown in figure 1, being the ideal structure schematic diagram of super-junction device；It is formed with the surface of N-type semiconductor substrate 101
N-type epitaxy layer 102, is formed with super junction groove in N-type epitaxy layer 102, and p-type epitaxial layer is filled with super junction groove
In 103a, existing structure, p-type epitaxial layer 103a is the mono-crystalline structures using epitaxy technique formation；By being filled in super junction groove
In p-type epitaxial layer 103a compositions p-type post 103a, Fig. 1 in only show a p-type post 103a, in fact, a super junction knot
Structure can include multiple spaced p-type post 103a, and the N-type epitaxy layer 102 between p-type post 103a constitutes N-type post 102.In P
Type post 103a surface is formed with PXing Ti areas 104, and planar gate structure, planar gate structure are formed with the surface in PXing Ti areas 104
Including the gate dielectric layer such as gate oxide 105 and polysilicon gate 106 being sequentially overlapped；Grid structure can also use trench gate structure,
Trench gate structure is no longer elaborated.Polysilicon gate 106 also extends into the surface of N-type post 102, the table in PXing Ti areas 104
Face be formed with by N+ district's groups into source region 107, the side autoregistration of source region 107 and polysilicon gate 106.To N-type semiconductor substrate
101 are thinned and form drain region after heavy doping, and the drain electrode 108 being made up of metal layer on back is formed with the back side in drain region.In front
Front metal layer 108 is formed with, and source electrode and grid are drawn by front metal layer, grid is connected by contact hole and polysilicon gate 06
Connect, source electrode is connected simultaneously by contact hole and source region 107 and PXing Ti areas 104.
Structure shown in Fig. 1 is ideal structure, and ideal structure, which is mainly, thinks that super junction groove is completely vertical structure,
Section is in a rectangular configuration, and this make it that the width at p-type post 103a each lengthwise position is consistent, so that p-type post 103a
Between N-type post 102 good charge balance can be realized at any position of longitudinal direction.
But, the actually limitation due to trench etch process, it is impossible to obtain the complete vertical super junction groove in side,
The side of super junction groove is inclined, as shown in Fig. 2 being the practical structures schematic diagram of existing super-junction device；Tied shown in Fig. 2
The section for being distinguished as super junction groove of structure is in inverted trapezoidal wide at the top and narrow at the bottom shown in structure and Fig. 1, and this causes the P shown in Fig. 2
Type post 103b is also inverted trapezoidal structure, and in existing structure, p-type post 103b is once formed using p-type epitaxy technique, therefore p-type post
Doping concentration at 103b each lengthwise position is consistent, but is due to that the p-type post 103b of bottom width can narrow, therefore bottom
P-type post 103b doping total amount can be less than the p-type post 103b at top doping total amount；Equally, each lengthwise position of N-type post 102
The doping total amount at place is also different.Due to the charge balance between p-type post 103b and the N-type post 102 of adjoining be p-type doping total amount and
The balance of n-type doping total amount, p-type post 103b is different in the doping total amount of each lengthwise position, can make p-type post 103b and N-type post 102
Between can not realize good charge matching, so can not realize depletion region maximize, i.e., can not realize highest breakdown voltage.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of manufacture method of super-junction device, can improve p-type post and N
Charge matching degree between type post, so as to improve the breakdown voltage of device.
In order to solve the above technical problems, the manufacture method for the super-junction device that the present invention is provided comprises the following steps：
Step 1: providing a N-type semiconductor epitaxial layer, using lithographic definition and perform etching outside the N-type semiconductor
Prolong the super junction groove that multiple periodic arrangements are formed in layer；By the limitation of etching technics, the side of the super junction groove is deviateed
In preferable vertical stratification and with less than 90 degree inclination angle and make the super junction groove in the width direction on section tie
Structure is in inverted trapezoidal wide at the top and narrow at the bottom.
Step 2: being filled to form p-type post to the super junction groove, filling is using deposit multilayer un-doped polysilicon
And one layer of p type single crystal silicon is realized.
Each layer un-doped polysilicon is formed in the lower surface of the groove, on side and extend to the ditch
On surface outside groove.
Carrying out a p-type ion implanting after each layer of un-doped polysilicon deposit is completed makes corresponding undoped polycrystalline
Silicon is converted to p-type DOPOS doped polycrystalline silicon, and from lower to upper the corresponding p-type ion implantation dosage of each layer p-type DOPOS doped polycrystalline silicon by
Step is reduced.
After the super junction groove is filled up completely with and completes p-type ion implanting by each layer un-doped polysilicon,
Remove the polysilicon of the surface outside the super junction groove and the polysilicon time of the super junction groove is carved necessarily
Depth, the depth is more than the junction depth of source region.
Afterwards, the p type single crystal silicon is filled in the super junction groove that polysilicon returns after carving, it is described to state p-type monocrystalline
The bulk concentration of silicon is less than the bulk concentration with the p-type DOPOS doped polycrystalline silicon of the top of its contact.
The p-type post is constituted by each layer p-type DOPOS doped polycrystalline silicon and the p type single crystal silicon；Between each p-type post
The N-type semiconductor epitaxial layer composition N-type post, the p-type post and the N-type post are alternately arranged composition super-junction structures.
Step 3: pick into the p type impurity of each layer p-type DOPOS doped polycrystalline silicon is diffused, polysilicon is utilized
Make to pick with good impurity diffusivity and uniform concentration gradient distribution and concentration gradient point are realized into the rear p-type cylinder
Cloth is stepped up to the p-type from bottom to top to gradually reduce from bottom to top with the width of this p-type post for making up inverted trapezoidal
The influence of the doping of each position of post, makes the doping of the p-type post and the N-type post at each lengthwise position flux matched.
Further improve is that the N-type semiconductor epitaxial layer is formed at N-type semiconductor substrate surface.
Further improve is that the N-type semiconductor substrate is N-type silicon substrate, and the N-type semiconductor epitaxial layer is N-type
Silicon epitaxy layer.
Further improve be, the technological parameter of the corresponding p-type ion implanting of each layer p-type DOPOS doped polycrystalline silicon is：Note
Enter impurity for boron, Implantation Energy is 100kev~800kev, and implantation dosage is 1e12cm-2~1e16cm-2。
Further improve is also to include step after step 3：
Step 4: using lithographic definition and p-type ion implantation technology formation PXing Ti areas, the PXing Ti areas are located at described
The top surface of p-type post is simultaneously extended in the N-type post surface of both sides.
Step 5: forming grid structure, the grid structure includes gate oxide and polysilicon gate, and the polysilicon gate covers
The p-type body surface for covering the PXing Ti areas and being covered by the polysilicon is used to form raceway groove.
Inject to form source region Step 6: carrying out N-type heavy doping ion.
Step 7: forming front metal layer and extraction source electrode and grid being patterned to the front metal layer.
Step 8: being formed with the drain region of N-type heavily doped region composition at the back side of the N-type semiconductor epitaxial layer.
Drained Step 9: forming metal layer on back and being drawn by the metal layer on back.
Further improve be, grid structure described in step 5 is planar gate structure, the gate oxide and described many
Crystal silicon grid are superimposed on the p-type body surface and extend to the N-type post surface.
Further improve is that grid structure described in step 5 is trench gate structure, including is formed at the N-type capital
The gate trench in portion, the gate oxide is formed at side and the lower surface of the gate trench, the polysilicon gate filling
In the gate trench, the polysilicon gate covers the PXing Ti areas from side.
Further improve is that the N-type semiconductor epi-layer surface is additionally included in before the photoetching process of step one
The step of forming hard mask layers, photoetching process is defined after the forming region of the super junction groove, passes through etching first
Technique removes the hard mask layers of the forming region of the super junction groove, afterwards using the hard mask layers as mask
The N-type semiconductor epitaxial layer is performed etching to form the super junction groove.
Further improve is that the hard mask layers are removed after being picked described in step 3 completion.
Further improve is that the hard mask layers are oxide-film or nitride film.
Further improvement is that the thickness of each layer un-doped polysilicon deposited in step 2 is 0.2 μm~2 μm.
Further improve is that the thickness of un-doped polysilicon described in the first layer deposited in step 2 is 0.5 μm~2 μ
m。
Further improve is that the thickness of p type single crystal silicon described in step 2 is 2 μm~10 μm.
Further improve is that p type single crystal silicon is formed using epitaxy technique described in step 2.
The present invention is after the completion of super junction etching groove, with reference to restriction effect of the etching technics to formation super junction groove
And making the characteristics of side of hyperstructure groove is in inverted trapezoidal for incline structure and section, the present invention is to hyperstructure trench fill
Technique is specifically designed, present invention p-type ion note after deposit using the deposit of multiple un-doped polysilicon and every time, with
And polysilicon be carved into refilling less than super junction groove certain depth mixed after polysilicon filling super junction groove
Miscellaneous concentration is slightly less than the p type single crystal silicon of the p-type polysilicon at top to realize the filling to super junction groove, each polysilicon p
The implantation dosage of ion implanting is set as that the corresponding implantation dosage of each layer polysilicon progressively successively decreases from the bottom up, and miscellaneous using p-type
Matter is easily picked in polysilicon into the characteristics of diffusion, is uniformly gradually reduced from bottom to top picking to be formed to have in vivo after
Concentration gradient distribution p-type post, p-type post the combination section that this longitudinal concentration is gradually changed be inverted trapezoidal structure can be real
The existing doping of p-type post and N-type post at each lengthwise position is flux matched, so the charge matching between p-type post and N-type post can be improved
Degree, so as to improve the breakdown voltage of device.
Further, since being carved and filling p type single crystal silicon at the top of super junction groove by returning, p type single crystal silicon passes through source region, energy
Enough it is less than the diffusible feature of p type impurity in polysilicon using the diffusivity of the p type impurity of p type single crystal silicon, prevents source region
Break-through, so as to further improve the performance of device.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description：
Fig. 1 is the ideal structure schematic diagram of super-junction device；
Fig. 2 is the practical structures schematic diagram of existing super-junction device；
Fig. 3 is the flow chart of the manufacture method of super-junction device of the embodiment of the present invention；
Fig. 4 A- Fig. 4 F be when super junction trench fill is carried out in present invention method it is each step by step in device architecture
Schematic diagram；
Fig. 5 A- Fig. 5 D are the device architecture signals after super junction trench fill in each step in present invention method
Figure.
Embodiment
As shown in figure 3, being the flow chart of the manufacture method of super-junction device of the embodiment of the present invention；Fig. 4 A to Fig. 4 E are this hairs
Carried out in bright embodiment method during super junction trench fill it is each step by step in device architecture schematic diagram；Fig. 5 A to Fig. 5 D are this hairs
Device architecture schematic diagram in bright embodiment method after super junction trench fill in each step, super-junction device of the embodiment of the present invention
Manufacture method comprise the following steps：
Step 1: as shown in Figure 4 A there is provided a N-type semiconductor epitaxial layer 102, using lithographic definition and perform etching in institute
State the super junction groove that multiple periodic arrangements are formed in N-type semiconductor epitaxial layer 102；It is described super by the limitation of etching technics
The side of knot groove deviate from preferable vertical stratification and with the inclination angle less than 90 degree and make the super junction groove along width
The cross section structure spent on direction is in inverted trapezoidal wide at the top and narrow at the bottom.
The N-type semiconductor epitaxial layer 102 is formed at the surface of N-type semiconductor substrate 101.In the embodiment of the present invention, the N
Type Semiconductor substrate 101 is N-type silicon substrate, and the N-type semiconductor epitaxial layer 102 is N-type silicon epitaxy layer.
In the embodiment of the present invention, the table of N-type semiconductor epitaxial layer 102 is additionally included in before the photoetching process of step one
The step of face forms hard mask layers 201, photoetching process is defined after the forming region of the super junction groove, is passed through first
Etching technics removes the hard mask layers 201 of the forming region of the super junction groove, afterwards with the hardmask
Layer 201 is that mask performs etching to form the super junction groove to the N-type semiconductor epitaxial layer 102.In the embodiment of the present invention,
The hard mask layers 201 are oxide-film；Also can be in other embodiments：The hard mask layers 201 are nitride film or oxygen
Change the lamination of film and nitride film.
Step 2: being filled to form p-type post 103b to the super junction groove, filling is more using deposit multilayer undoped
Crystal silicon and one layer of p type single crystal silicon 1034 are realized.
Each layer un-doped polysilicon is formed in the lower surface of the groove, on side and extend to the ditch
On surface outside groove.
Carrying out a p-type ion implanting after each layer of un-doped polysilicon deposit is completed makes corresponding undoped polycrystalline
Silicon is converted to p-type DOPOS doped polycrystalline silicon, and from lower to upper the corresponding p-type ion implantation dosage of each layer p-type DOPOS doped polycrystalline silicon by
Step is reduced.
After the super junction groove is filled up completely with and completes p-type ion implanting by each layer un-doped polysilicon,
Remove the polysilicon of the surface outside the super junction groove and the polysilicon time of the super junction groove is carved necessarily
Depth, the depth is more than the junction depth of source region 107.
Afterwards, the p type single crystal silicon 1034 is filled in the super junction groove that polysilicon returns after carving, it is described to state p-type
The bulk concentration of monocrystalline silicon 1034 is less than the bulk concentration with the p-type DOPOS doped polycrystalline silicon of the top of its contact.
The p-type post 103b is constituted by each layer p-type DOPOS doped polycrystalline silicon and the p type single crystal silicon 1034；By each P
The N-type semiconductor epitaxial layer 102 composition N-type post between type post 103b, the p-type post 103b and the N-type post are alternately arranged
Row composition super-junction structures.
Now with 3 polycrystalline silicon deposits shown in Fig. 4 A to Fig. 4 F add 3 p-type ion implantings and follow-up polysilicon return carve and
To the fill process of super junction groove in the step of formation of p type single crystal silicon 1034 is to illustrate the embodiment of the present invention two：
As shown in Figure 4 A, first layer un-doped polysilicon 1031 is first filled, p-type ion implanting 202a is carried out afterwards, by P
First layer un-doped polysilicon 1031 after type ion implanting 202a is converted to first layer p-type DOPOS doped polycrystalline silicon 1031.P-type from
Son injection 202a technological parameter be：Implanted dopant is boron, and Implantation Energy is 100kev~800kev, and implantation dosage is
1e12cm-2~1e16cm-2.The thickness of un-doped polysilicon 1031 described in first layer is 0.5 μm~2 μm.
As shown in Figure 4 B, filling second layer un-doped polysilicon 1032, carries out p-type ion implanting 202b, by p-type afterwards
Second layer un-doped polysilicon 1032 after ion implanting 202b is converted to second layer p-type DOPOS doped polycrystalline silicon 1032.P-type from
Son injection 202b implantation dosage is less than under conditions of p-type ion implanting 202a, and p-type ion implanting 202b technological parameter is：
Implanted dopant is boron, and Implantation Energy is 100kev~800kev, and implantation dosage is 1e12cm-2~1e16cm-2.The second layer is non-to be mixed
The thickness of miscellaneous polysilicon 1032 is 0.2 μm~2 μm.
As shown in Figure 4 C, filling third layer un-doped polysilicon 1033, carries out p-type ion implanting 202c, by p-type afterwards
Third layer un-doped polysilicon 1033 after ion implanting 202c is converted to third layer p-type DOPOS doped polycrystalline silicon 1033.P-type from
Son injection 202c implantation dosage is less than under conditions of p-type ion implanting 202b, and p-type ion implanting 202c technological parameter is：
Implanted dopant is boron, and Implantation Energy is 100kev~800kev, and implantation dosage is 1e12cm-2~1e16cm-2.Third layer is non-to mix
The thickness of miscellaneous polysilicon 1033 is 0.2 μm~2 μm.
As shown in Figure 4 D, because three layers of polysilicon can be also extended to outside super junction groove, the step of etching polysilicon is being carried out
In rapid, the polysilicon 1031,1032 and 1033 that can be may extend to outside super junction groove removes and will proceed returning for polysilicon
Carve until forming the top channel that a depth is more than the junction depth of source region 107 at the top of super junction groove.Afterwards in top ditch
The p type single crystal silicon 1034 is formed in groove.The thickness of the p type single crystal silicon 1034 is 2 μm~10 μm.The p type single crystal silicon
1034 are formed using epitaxy technique.The thickness of the p type single crystal silicon 1034 is the top channel formed after etching polysilicon
Depth.
The p type single crystal silicon 1034 of mono-crystalline structures is set at p-type post 103b top, relative to being not provided with monocrystalline knot
The p-type post 103b of structure is compared, and the diffusivity using the p type impurity of p type single crystal silicon is less than the diffusible spy of p type impurity in polysilicon
Point, can prevent the break-through of source region 107, so as to further improve the performance of device；Namely it is being not provided with p type single crystal silicon
All be the p-type post 103b that is made up of polysilicon in the range of the junction depth of source region 107 when 1034, the impurity of polysilicon easily diffusion from
And source region 107 is produced break-through.
As shown in Figure 4 E, the hard mask layers 201 are removed afterwards.
Step 3: pick into the p type impurity of each layer p-type DOPOS doped polycrystalline silicon is diffused, it is right above to continue
Fig. 4 D explanation, as shown in Figure 4 E, polysilicon 1031,1032 and 1033 is by picking after and the p type single crystal silicon 1034
Superposition is formed in p-type post 103b, Fig. 4 E to individually show p type single crystal silicon 1034 together, and list has been made to p type single crystal silicon
Only mark 1034, actually p type single crystal silicon 1034 belong to a whole p-type post 103b part.Have using polysilicon
Good impurity diffusivity, which makes to pick, realizes uniform concentration gradient distribution and concentration gradient point into the rear p-type post 103b bodies
Cloth is stepped up to institute from bottom to top to gradually reduce from bottom to top with this p-type post 103b for making up inverted trapezoidal width
The influence of the doping of p-type post 103b each position is stated, makes the p-type post 103b and the N-type post at each lengthwise position
Doping is flux matched.
Further improve is also to include step after step 3：
Step 4: as shown in Figure 5A, using lithographic definition and p-type ion implantation technology formation PXing Ti areas 104, the P
Xing Ti areas 104 are located at the top surface of the p-type post 103b and extended in the N-type post surface of both sides.
Step 5: as shown in Figure 5 B, forming grid structure, the grid structure includes gate oxide 105 and polysilicon gate
106, the surface of PXing Ti areas 104 that the polysilicon gate 106 covers the PXing Ti areas 104 and covered by the polysilicon is used
In formation raceway groove.
In the embodiment of the present invention, grid structure described in step 5 is planar gate structure, the gate oxide 105 and described
Polysilicon gate 106 is superimposed on the surface of PXing Ti areas 104 and extends to the N-type post surface.
Also can be in other embodiments：Described in grid structure be trench gate structure, including be formed at the N-type capital
The gate trench in portion, the gate oxide 105 is formed at side and the lower surface of the gate trench, the polysilicon gate
106 are filled in the gate trench, and the polysilicon gate 106 covers the PXing Ti areas 104 from side.
Step 6: as shown in Figure 5 C, carrying out N-type heavy doping ion and injecting to form source region 107.Also worn afterwards including formation
Cross the body area draw-out area of the P+ doping of the source region 107.
Step 7: as shown in Figure 5 D, forming front metal layer 108 and the front metal layer 108 being patterned and draw
Go out source electrode and grid.Grid is connected by contact hole and polysilicon gate 106, and source electrode passes through contact hole and source region 107 and PXing Ti areas
104 connect simultaneously.
Step 8: as shown in Figure 5 D, N-type heavily doped region composition is formed with the back side of the N-type semiconductor epitaxial layer 102
Drain region.In the embodiment of the present invention, N-type semiconductor substrate 101 be N-type heavy doping, between to the back side of N-type semiconductor substrate 101
It is thinned and forms drain region, also can is that back side N+ injections are carried out after to the thinning back side of N-type semiconductor substrate 101 in other embodiments
Form drain region.
Step 9: as shown in Figure 5 D, forming metal layer on back 109 and drawing drain electrode by the metal layer on back 109.
Present invention method can form the P in vivo with the uniform concentration gradient distribution gradually reduced from bottom to top
Type post 103b, the p-type post 103b combinations section that this longitudinal concentration is gradually changed can realize p-type post for the structure of inverted trapezoidal
The doping of 103b and N-type post 102 at each lengthwise position is flux matched, so can improve between p-type post 103b and N-type post 102
Charge matching degree, so as to improve the breakdown voltage of device, the super junction that present invention method is obtained can be obtained through emulation
The breakdown voltage of device reaches 733V.
The present invention is described in detail above by specific embodiment, but these not constitute the limit to the present invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, and these also should
It is considered as protection scope of the present invention.
Claims (14)
1. a kind of manufacture method of super-junction device, it is characterised in that comprise the following steps：
Step 1: providing a N-type semiconductor epitaxial layer, using lithographic definition and perform etching in the N-type semiconductor epitaxial layer
The middle super junction groove for forming multiple periodic arrangements；By the limitation of etching technics, the side of the super junction groove deviates from reason
The vertical stratification thought and with the inclination angle less than 90 degree and make the super junction groove in the width direction on cross section structure be in
Inverted trapezoidal wide at the top and narrow at the bottom；
Step 2: be filled to form p-type post to the super junction groove, filling using deposit multilayer un-doped polysilicon and
One layer of p type single crystal silicon is realized；
Each layer un-doped polysilicon is formed in the lower surface of the groove, on side and extended to outside the groove
Surface on；
Carrying out a p-type ion implanting after each layer of un-doped polysilicon deposit is completed turns corresponding un-doped polysilicon
P-type DOPOS doped polycrystalline silicon is changed to, and the corresponding p-type ion implantation dosage of each layer p-type DOPOS doped polycrystalline silicon progressively subtracts from lower to upper
It is few；
After the super junction groove is filled up completely with and completes p-type ion implanting by each layer un-doped polysilicon, remove
The polysilicon of surface outside the super junction groove and the polysilicon of the super junction groove returned carve certain depth,
The depth is more than the junction depth of source region；
Afterwards, the p type single crystal silicon is filled in the super junction groove that polysilicon returns after carving, the p type single crystal silicon of stating
Bulk concentration is less than the bulk concentration with the p-type DOPOS doped polycrystalline silicon of the top of its contact；
The p-type post is constituted by each layer p-type DOPOS doped polycrystalline silicon and the p type single crystal silicon；Institute between each p-type post
N-type semiconductor epitaxial layer composition N-type post is stated, the p-type post and the N-type post are alternately arranged composition super-junction structures；
Step 3: pick into the p type impurity of each layer p-type DOPOS doped polycrystalline silicon is diffused, have using polysilicon
Good impurity diffusivity, which makes to pick, realizes that uniform concentration gradient is distributed and concentration gradient is distributed as into the rear p-type cylinder
Gradually reduce, be stepped up from bottom to top to the p-type post with the width of this p-type post for making up inverted trapezoidal from bottom to top
The influence of the doping of each position, makes the doping of the p-type post and the N-type post at each lengthwise position flux matched.
2. the manufacture method of super-junction device as claimed in claim 1, it is characterised in that：The N-type semiconductor epitaxial layer shape
Into in N-type semiconductor substrate surface.
3. the manufacture method of super-junction device as claimed in claim 2, it is characterised in that：The N-type semiconductor substrate is N-type
Silicon substrate, the N-type semiconductor epitaxial layer is N-type silicon epitaxy layer.
4. the manufacture method of super-junction device as claimed in claim 1, it is characterised in that：Each layer p-type DOPOS doped polycrystalline silicon
The technological parameter of corresponding p-type ion implanting is：Implanted dopant is boron, and Implantation Energy is 100kev~800kev, implantation dosage
For 1e12cm-2~1e16cm-2。
5. the manufacture method of super-junction device as claimed in claim 1, it is characterised in that：Also include step after step 3
Suddenly：
Step 4: using lithographic definition and p-type ion implantation technology formation PXing Ti areas, the PXing Ti areas are located at the p-type
The top surface of post is simultaneously extended in the N-type post surface of both sides；
Step 5: forming grid structure, the grid structure includes gate oxide and polysilicon gate, and the polysilicon gate covers institute
The ShuPXing Ti areas and p-type body surface that is covered by the polysilicon is used to form raceway groove；
Inject to form source region Step 6: carrying out N-type heavy doping ion；
Step 7: forming front metal layer and extraction source electrode and grid being patterned to the front metal layer；
Step 8: being formed with the drain region of N-type heavily doped region composition at the back side of the N-type semiconductor epitaxial layer；
Drained Step 9: forming metal layer on back and being drawn by the metal layer on back.
6. the manufacture method of super-junction device as claimed in claim 5, it is characterised in that：Grid structure is described in step 5
Planar gate structure, the gate oxide and the polysilicon gate are superimposed on the p-type body surface and extend to the N-type post table
Face.
7. the manufacture method of super-junction device as claimed in claim 5, it is characterised in that：Grid structure is described in step 5
Trench gate structure, including the gate trench of the N-type column top is formed at, the gate oxide is formed at the gate trench
Side and lower surface, the polysilicon gate are filled in the gate trench, and the polysilicon gate covers the p-type from side
Body area.
8. the manufacture method of super-junction device as claimed in claim 1, it is characterised in that：Before the photoetching process of step one
The step of being additionally included in the N-type semiconductor epi-layer surface formation hard mask layers, photoetching process defines the super junction
After the forming region of groove, first by etching technics by the hard mask layers of the forming region of the super junction groove
Remove, afterwards the N-type semiconductor epitaxial layer is performed etching to form the super junction ditch by mask of the hard mask layers
Groove.
9. the manufacture method of super-junction device as claimed in claim 8, it is characterised in that：Step 3 complete described in pick into
The hard mask layers are removed afterwards.
10. the manufacture method of super-junction device as claimed in claim 8, it is characterised in that：The hard mask layers are oxidation
Film or nitride film.
11. the manufacture method of super-junction device as claimed in claim 1, it is characterised in that：Each layer institute deposited in step 2
The thickness for stating un-doped polysilicon is 0.2 μm~2 μm.
12. the manufacture method of super-junction device as claimed in claim 11, it is characterised in that：The first layer deposited in step 2
The thickness of the un-doped polysilicon is 0.5 μm~2 μm.
13. the manufacture method of super-junction device as claimed in claim 1, it is characterised in that：P type single crystal silicon described in step 2
Thickness be 2 μm~10 μm.
14. the manufacture method of super-junction device as claimed in claim 1, it is characterised in that：P type single crystal silicon described in step 2
Formed using epitaxy technique.
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| CN108807184A (en) * | 2018-06-25 | 2018-11-13 | 张帅 | Field-effect transistor with super-junction structures and its manufacturing method |
| CN111863623A (en) * | 2020-08-25 | 2020-10-30 | 上海维安半导体有限公司 | Preparation method of multilayer super junction semiconductor device |
| CN114023821A (en) * | 2021-10-20 | 2022-02-08 | 上海华虹宏力半导体制造有限公司 | Super junction device and manufacturing method thereof |
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