CN107210205A - Resin film formation composite sheet and the manufacture method of the chip of tape tree adipose membrane - Google Patents
Resin film formation composite sheet and the manufacture method of the chip of tape tree adipose membrane Download PDFInfo
- Publication number
- CN107210205A CN107210205A CN201680008033.8A CN201680008033A CN107210205A CN 107210205 A CN107210205 A CN 107210205A CN 201680008033 A CN201680008033 A CN 201680008033A CN 107210205 A CN107210205 A CN 107210205A
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- Prior art keywords
- resin film
- film formation
- composite sheet
- film
- chip
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- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 208000032825 Ring chromosome 2 syndrome Diseases 0.000 description 1
- CIVKKLRUDDHREQ-UHFFFAOYSA-N SC(CC[Si](OC)(OC)C)O Chemical compound SC(CC[Si](OC)(OC)C)O CIVKKLRUDDHREQ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000980 acid dye Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012675 alcoholic extract Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical class OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 1
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- MCJUWBUSIQXMPY-UHFFFAOYSA-N cyclopenta-1,3-diene titanium Chemical compound [Ti].C1C=CC=C1 MCJUWBUSIQXMPY-UHFFFAOYSA-N 0.000 description 1
- FWLDHHJLVGRRHD-UHFFFAOYSA-N decyl prop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C=C FWLDHHJLVGRRHD-UHFFFAOYSA-N 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 239000000982 direct dye Substances 0.000 description 1
- 239000000986 disperse dye Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- XSMJZKTTXZAXHD-UHFFFAOYSA-N ethene;2-methylprop-2-enoic acid Chemical compound C=C.CC(=C)C(O)=O XSMJZKTTXZAXHD-UHFFFAOYSA-N 0.000 description 1
- UHPJWJRERDJHOJ-UHFFFAOYSA-N ethene;naphthalene-1-carboxylic acid Chemical compound C=C.C1=CC=C2C(C(=O)O)=CC=CC2=C1 UHPJWJRERDJHOJ-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229920000092 linear low density polyethylene Polymers 0.000 description 1
- 239000004707 linear low-density polyethylene Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002454 metastable transfer emission spectrometry Methods 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-methyl phenol Natural products CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 229940006093 opthalmologic coloring agent diagnostic Drugs 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002918 oxazolines Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- XPPWLXNXHSNMKC-UHFFFAOYSA-N phenylboron Chemical class [B]C1=CC=CC=C1 XPPWLXNXHSNMKC-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920006264 polyurethane film Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 239000000985 reactive dye Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D201/00—Coating compositions based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Laminated Bodies (AREA)
- Dicing (AREA)
- Die Bonding (AREA)
Abstract
The present invention provides a kind of resin film formation composite sheet, and there is the direct lamination on support chip to have the structure for the resin film formation film that can form resin film for it, and meet following important documents (I) and (II).Important document (I)：After surface (α) laminating on silicon of the resin film formation film for side for the treatment of to fit with silicon wafer, it is being determined in 23 DEG C of environment, under 300mm/ points of draw speed and the stripping conditions (x) of 180 ° of draw angle, by the resin film formation film from the silicon wafer peel off required for peeling force (α 1) be 0.05~10.0N/25mm；Important document (II)：It is being determined under the stripping conditions (x), by the support chip from the resin film formation with the direct lamination side of the support chip peeled off with the surface (β) of film required for peeling force (β 1) be more than peeling force (α 1) value.
Description
Technical field
The present invention relates to resin film formation composite sheet and the tape tree adipose membrane for having used resin film formation composite sheet
The manufacture method of chip.
Background technology
In recent years, used and be referred to as the Method for Installation of so-called upside-down mounting (face down) mode to carry out semiconductor device
Manufacture.In upside-down mounting mode, be equipped with the circuit face of semiconductor chip with electrodes such as projections semiconductor chip (with
Under, also referred to as " chip "), and the electrode of chip engages with substrate.Therefore, sometimes result in and opposite with substrate engagement side
Exhume on the surface (hereinafter also referred to as " back side of chip ") of the chip of side.
Sometimes the resin film formed by organic material is formed at the back side of the chip exhumed, so that with resin
The form assembling of the chip of film is in semiconductor devices.For the resin film, it can also be assigned for it for preventing in cutting work
Cracked after sequence, encapsulation as the function of diaphragm, for gained die bonding other to be led in brilliant pad portion or partly
The function as adhesive film on other components such as body chip.
In general, the chip of the tape tree adipose membrane is by the way that the solution for wrapping resiniferous composition is being utilized into spin-coating method etc.
It is coated on the back side of chip and is formed after film, makes the dried coating film and be solidified to form resin film, and to gained resin
The chip of film is cut and manufactured.
In addition, the back side by the way that the resin film formation of curability to be pasted on to chip with piece, and carrying out chip cutting
It is front and rear by irradiation energy line or to be heated and the resin film formation is obtained resin film with piece solidification, thus it can also make
Make chip, the chip of tape tree adipose membrane of tape tree adipose membrane.
It is used as the material that resin film is formed on the back side of such chip, the back side of chip, it has been proposed that various resins
Film formation film.
For example, Patent Document 1 discloses a kind of chip protection film, it is with energy-line solidifying type diaphragm shape
Stratification is included by the chip protection film of the structure of 2 stripping film clampings, the energy-line solidifying type diaphragm forming layer：
Component of polymer comprising acrylic copolymer, energy ray-curable composition, dyestuff or pigment, inorganic filler and photopolymerization
Initiator.
According to the record of patent document 1, the chip protection film can form laser marking knowledge by irradiation energy line
Other property, hardness and the diaphragm good with the adaptation of chip, and compared with existing chip protection film, Neng Goushi
The simplification of existing process.
In addition, Patent Document 2 discloses a kind of one-piece type wafer back surface protective film of dicing tape, it has on base material
Dicing tape with adhesive phase, and have on the adhesive phase of the dicing tape and have passed through coloring and with given bullet
The wafer back surface protective film of property modulus.
According to the record of patent document 2, the wafer back surface protective film in the cutting action of semiconductor wafer with semiconductor
Confining force between chip is good.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2009-138026 publications
Patent document 2：Japanese Unexamined Patent Publication 2010-199543 publications
The content of the invention
Problems to be solved by the invention
However, when the diaphragm described in patent document 1 and 2 is pasted on into chip, it may occur that be pasted onto chip
On diaphragm produce dislocation or be attached with chip in the state of foreign matter and glued in the form of also including foreign matter on this wafer
The situation of diaphragm is pasted.In this case, it is sometimes desirable to enter to be about to diaphragm from peeling off again (re-posted) on chip.
However, in most instances, it is difficult to which the diaphragm being temporarily pasted onto on chip is intactly peeled off without leading again
Cause to produce residue on chip.
Particularly, for the diaphragm disclosed in patent document 1 and 2, if when being pasted for raising between chip
Adaptation, paste after confining force between chip purpose and be temporarily pasted onto on chip, then due between chip
Adaptation it is high, thus it is extremely difficult to be peeled off again.
If that is, the diaphragm for being about to temporarily be pasted onto on chip of being eager to excel is peeled off, can be led because of the power of application
Cause chip occur it is damaged or even if peeled diaphragm also can on chip remnant diaphragm, it is impossible to the chip is carried out
Recycle.
In patent document 1 and 2, for described diaphragm, from when pasting the adaptation between chip, paste after
Studied from the viewpoint of confining force between chip, but guarantor completely not on being temporarily pasted onto on chip
The research of the releasable of cuticula.
It is an object of the invention to provide releasable it is excellent, can also peel off after being pasted on silicon wafer
Resin film formation composite sheet and used the resin film formation composite sheet tape tree adipose membrane chip manufacture method.
The method solved the problems, such as
The present inventor etc. find, for on support chip direct lamination have resin film formation film structure resin
Film formation composite sheet, by resin film formation film is peeled off into required stripping from the silicon wafer as adherend
Power and the peeling force required for resin film formation is peeled off with film and support chip are adjusted, and can solve above-mentioned problem, and then
Complete the present invention.
That is, the present invention provides following [1]~[9].
[1] a kind of resin film formation composite sheet, there is the direct lamination on support chip to have and can form resin film for it
The structure of resin film formation film, and meet following important documents (I) and (II),
Important document (I)：It will treat with the surface (α) of film to be pasted onto silicon wafer with the above-mentioned resin film formation that silicon wafer pastes side
It is being determined in 23 DEG C of environment, under 300mm/ points of draw speed and the stripping conditions (x) of 180 ° of draw angle, will after upper
It is 0.05~10.0N/25mm that the resin film formation film peels off required peeling force (α 1) from the silicon wafer；
Important document (II)：It is being determined under above-mentioned stripping conditions (x), by above-mentioned support chip from the direct lamination of above-mentioned support chip
It is value more than peeling force (α 1) that the above-mentioned resin film formation of side peels off required peeling force (β 1) with the surface (β) of film.
[2] the resin film formation composite sheet described in above-mentioned [1], it also meets following important documents (III),
Important document (III)：Formed by above-mentioned resin film when forming resin film with film, being determined under above-mentioned stripping conditions (x),
By stripping of the above-mentioned support chip required for being peeled off with the surface (β ') of the above-mentioned resin film of the direct lamination side of above-mentioned support chip
Power (β 2) is 0.02~5.0N/25mm.
[3] the resin film formation composite sheet described in above-mentioned [1] or [2], wherein, peeling force (β 1) is 0.05~20.0N/
25mm。
[4] the resin film formation composite sheet any one of above-mentioned [1]~[3], wherein, above-mentioned support chip be only by
The piece that base material is constituted.
[5] the resin film formation composite sheet any one of above-mentioned [1]~[3], wherein, above-mentioned support chip is in base
There is the bonding sheet of adhesive phase on material,
The resin film formation has the surface of the adhesive phase and above-mentioned resin film formation film of the bonding sheet with composite sheet
The structure of (β) directly lamination.
[6] the resin film formation composite sheet described in above-mentioned [5], wherein, above-mentioned adhesive phase is by consolidating comprising energy line
The layer of the adhesive composition formation of change type resin.
[7] the resin film formation composite sheet any one of above-mentioned [1]~[6], wherein, above-mentioned resin film formation is used
Film includes component of polymer (A) and curability composition (B).
[8] the resin film formation composite sheet any one of above-mentioned [1]~[7], wherein, above-mentioned resin film formation is used
Film is the formation material of diaphragm or adhesive film.
[9] a kind of manufacture method of the chip of tape tree adipose membrane, it has following processes (1)~(4),
Process (1)：Resin film formation composite sheet according to any one of claims 1 to 8 is pasted at the back side of workpiece
Process；
Process (2)：The process cut to workpiece；
Process (3)：The process that resin film is formed with film is formed by resin film；
Process (4)：Pickup obtained from process (2) through have passed through the workpiece of cutting, so as to obtain the process of chip.
The effect of invention
The releasable of the resin film formation composite sheet of the present invention is excellent, also can after silicon wafer is pasted on
Realize and peel off, and the silicon wafer after stripping can be recycled.Therefore, according to the resin film formation use for having used the present invention
The manufacture method of the chip of the tape tree adipose membrane of composite sheet, has advantage from the viewpoint of productivity and economy.
Brief description of the drawings
[Fig. 1] is the profile of the resin film formation composite sheet of an embodiment of the invention.
[Fig. 2] is to show to paste the resin film formation composite sheet of an embodiment of the invention on silicon
When structure profile.
[Fig. 3] is to show the resin film formation composite sheet shape on silicon using an embodiment of the invention
The profile of structure during resin film.
Symbol description
1a, 1b, 1c, 1d resin film formation composite sheet (composite sheet)
10 support chips
20 resin film formation films
21 surfaces (α)
22 surfaces (β)
30 resin films
31 surfaces (α ')
32 surfaces (β ')
40 fixture adhesive linkages
50 slide glasses
100 silicon wafers
Embodiment
In this specification, such as when using the term of " (methyl) acrylate ", expression is " acrylate " and " first
Both base acrylate ", other similar terms are similarly.
In addition, " energy line " refers to such as ultraviolet, electron beam, preferred ultraviolet.
[composition of resin film formation composite sheet]
Fig. 1 is the profile of the resin film formation composite sheet of an embodiment of the invention.
As being also showed that in Fig. 1, resin film formation of the invention is (below, also referred to as " compound with composite sheet
Piece ") there is the direct lamination on support chip to have the structure of the resin film formation film that can form resin bed.
It should be noted that the form of the composite sheet on the present invention, has no specifically limited, can be such as long strip
The forms such as shape, single leaf label.
As the composite sheet of an embodiment of the invention, the composite sheet 1a as shown in Fig. 1 (a) can be enumerated, its
There is the structure of resin film formation film 20 with the lamination directly on a surface in support chip 10.
It is used as the shape of the resin film formation film 20 of the composite sheet of an embodiment of the invention, preferably following shape
Shape：Essentially identical shape or the shape of silicon wafer can be included with silicon wafer as adherend.
It should be noted that in Fig. 1 (a) composite sheet 1a, support chip 10 and resin film formation film 20 are shown substantially
Identical shape is less than the shape of support chip 10 but it is also possible to be the resin film formation as shown in Fig. 1 (b) with the shape of film 20
The composite sheet 1b of shape.
In addition, as the composite sheet of an embodiment of the invention, can enumerate has ring as shown in Fig. 1 (c)
The composite sheet 1c of the fixture adhesive linkage 40 of shape.
The fixture adhesive linkage 40 of ring-type is in order at when Nian Jie with the fixture such as ring-shaped frame and improves viscous relative to the fixture
The purpose of relay and the layer set, it can be formed by the double-sided adhesive sheet with base material (core) or by adhesive.
It should be noted that in the composite sheet 1c shown in Fig. 1 (c), fixture adhesive linkage 40 is arranged at resin film and formed
With on the surface (α) 21 of film 20, but as the composite sheet of an embodiment of the invention, it can also be formed as such as Fig. 1 (b) institutes
Show the structure of such setting fixture adhesive linkage 40 on the surface of composite sheet 1b support chip 10.
It should be noted that for example, the resin film formation film 20 that the composite sheet 1a shown in Fig. 1 (a) has it is exposed
Surface (α) 21 can turn into sticking veneer with the silicon wafer as adherend.
Therefore, in order to prevent foreign matter on surface (α) 21 from adhering to and impaired etc., that can also be formed as shown in Fig. 1 (d)
The further lamination on the surface (α) 21 of resin film formation film 20 of sample has the composite sheet 1d of slide glass 50, the slide glass 50
Composite sheet 1d can be peeled off when being pasted on silicon wafer.
Composite sheet 1d shown in Fig. 1 (d) is illustrated that and formed in the resin films having of the composite sheet 1a shown in Fig. 1 (a)
With the structure that slide glass 50 is provided with the surface (α) 21 of film 20.Used when the slide glass 50 is to prevent from preserving in resin film formation
Adhere to dirt etc. on the surface (α) 21 of film 20 and set, it is removed when composite sheet 1d is pasted on into silicon wafer.
Used it should be noted that the slide glass 50 that the composite sheet 1d shown in Fig. 1 (d) has can be enumerated by slide glasses such as resin films
The piece that base material is constituted, is preferably the piece for implementing lift-off processing with the surface of base material to slide glasses such as the resin films.
In addition, with the composite sheet 1b of composite sheet 1d structure similarly, for Fig. 1 (b), can also be to cover surface (α)
21 and the mode on surface of support chip 10 slide glass is further set, can also be to cover for the composite sheet 1c shown in Fig. 1 (c)
The mode on the surface of cap surface (α) 21 and fixture adhesive linkage 40 sets the slide glass.
Here, the support chip that the composite sheet of an embodiment of the invention has only can be made up of base material
Piece or the bonding sheet on base material with adhesive phase.
It should be noted that in the case where using bonding sheet as support chip, adhesive phase as the bonding sheet with
Resin film forms the structure of the direct lamination in surface (β) 22 with film 20.
In addition, as the support chip used in an embodiment of the invention or by with implementing stripping
The piece constituted from the base material on the surface of processing.For using the piece being made up of the base material with the surface for implementing lift-off processing
For composite sheet obtained from support chip, the surface for implementing lift-off processing and resin film formation film 20 as base material
The direct lamination in surface (β) 22 structure.
[peeling force (α 1) of resin film formation composite sheet, (β 1), (β 2)]
The resin film formation composite sheet of the present invention needs to meet following important documents (I) and (II).
Condition (I)：It will treat with the surface (α) of film to be pasted onto silicon wafer with the above-mentioned resin film formation that silicon wafer pastes side
It is being determined in 23 DEG C of environment, under 300mm/ points of draw speed and the stripping conditions (x) of 180 ° of draw angle, will after upper
It is 0.05~10.0N/25mm that the resin film formation film peels off required peeling force (α 1) from the silicon wafer.
Important document (II)：It is being determined under above-mentioned stripping conditions (x), by above-mentioned support chip from the direct lamination of above-mentioned support chip
It is value more than peeling force (α 1) that the above-mentioned resin film formation of side peels off required peeling force (β 1) with the surface (β) of film.
It should be noted that in this specification, " peeling force (α 1) " and " peeling force specified in above-mentioned important document (I), (II)
What (β 1) " was represented is the value measured by condition and method described in embodiment.
Fig. 2 is when showing to paste the resin film formation composite sheet of an embodiment of the invention on silicon
Structure profile.
For " peeling force (α 1) " specified in important document (I), as shown in Figure 2, it is defined be silicon wafer 100,
And boundary face α 1 of the resin film formation between the surface (α) 21 of film 20 of side peeling force is pasted with silicon wafer.
In the present invention, peeling force (α 1) is needed for 0.05~10.0N/25mm.
For example, for the conventional resin film formation film as disclosed in patent document 1 and 2, most cases
Under be in order at improve the adaptation and the purpose of retentivity between silicon wafer and set, thus carried out above-mentioned to improve
The design of material of the value of peeling force (α 1).
However, when peeling force (α 1) is more than 10.0N/25mm, can actually cause to be difficult to temporarily pasting on silicon
Resin film formation peeled off again with film.That is, in this case, if by paste on silicon should
Resin film formation is peeled off by force with film, then it is assumed that can cause the resin film formation film or silicon wafer of remnant on silicon
Piece occurs damaged, it is impossible to which the silicon wafer is recycled.
Therefore, in the composite sheet of the present invention, in order to obtain, releasable is excellent, also can after silicon wafer is pasted on
The composite sheet of stripping, below 10.0N/25mm is adjusted to by above-mentioned peeling force (α 1).
On the other hand, when above-mentioned peeling force (α 1) is less than 0.05N/25mm, exist after silicon wafer is pasted on, especially
It is the tendency for easily tilting or peeling off in the end of composite sheet.
From the above point of view, in an embodiment of the invention, peeling force (α 1) is preferably 0.06~9.5N/
25mm, more preferably 0.07~9.2N/25mm, further preferably for 0.1~9.0N/25mm, more preferably 0.2~8.0N/
25mm, still more preferably for 0.5~6.0N/25mm, much further preferably from 0.5~4.0N/25mm, particularly preferably 0.5
~3.0N/25mm.
It should be noted that in an embodiment of the invention, as peeling force (α 1) method of adjustment, can enumerate
For example：To the kind of component of polymer, curability composition, inorganic filling material, additive contained in resin film formation film etc.
The method that class, content carry out appropriate selection to be adjusted., can be by appropriate on specific peeling force (α 1) method of adjustment
Consider the item described in the project for each composition being described below to be adjusted.
For " peeling force (β 1) " specified in important document (II), for example, as shown in Figure 2, it is defined be with it is upper
State boundary face β's 1 between the surface (β) 22 of the resin film formation film 20 of the direct lamination side of support chip 10 and support chip 10
Peeling force.
It should be noted that should be tree as defined in " peeling force (β 1) " in the case where using bonding sheet as support chip
The peeling force of boundary face between the adhesive phase for the bonding sheet that adipose membrane formation is used with the surface (β) of film and as support chip.
In the present invention, peeling force (β 1) is needed for value more than above-mentioned peeling force (α 1).
If peeling force (β 1) is the value less than peeling force (α 1), shelled again by the composite sheet for being pasted on silicon wafer
From when, remaining all or part of resin film formation film on silicon can be caused, thus can not to the silicon wafer carry out again
Utilize.
From the viewpoint of the further releasable for improving composite sheet, peeling force (β 1) and the difference of peeling force (α 1) are used as
[(β 1)-(α 1)], preferably more than 0.01N/25mm, more preferably more than 0.1N/25mm, further preferably for 0.15N/25mm with
Above, it is more preferably more than 0.2N/25mm, be still more preferably more than 0.5N/25mm, is particularly preferably 1.0N/25mm
More than.
In addition, as the difference [β 1- α 1] of peeling force (β 1) and peeling force (α 1), preferably below 20N/25mm, more preferably
It is more excellent for below 12N/25mm, but from the viewpoint of pick when making to be picked up the silicon wafer that cutting is obtained is good
Elect as below 8.0N/25mm, more preferably below 6.0N/25mm, still more preferably for below 4.0N/25mm, enter again
One step is preferably below 2.5N/25mm.
In an embodiment of the invention, as peeling force (β 1), preferably 0.05~20.0N/25mm, more preferably
For 0.2~18.0N/25mm, more preferably 0.5~16.0N/25mm, be still more preferably 1.0~14.0N/25mm.
If peeling force (β 1) is more than 0.05N/25mm, peeled off again by the composite sheet for being pasted on silicon wafer
When, it can prevent resin film formation with the phenomenon separated between film and support chip in boundary face β 1.
On the other hand, if peeling force (β 1) is below 20.0N/25mm, it can make to enter the silicon wafer that cutting is obtained
Pick during row pickup is good.
It should be noted that in an embodiment of the invention, as peeling force (β 1) method of adjustment, can enumerate
For example：Resin film formation (is also wrapped with species, content, the species of used support chip of above-mentioned each composition contained in film
The species of the resin film as base material is included, the resin of peel ply and the species and use level of additive is constituted, constitutes adhesive phase
Resin and additive species and use level) method that carries out appropriate selection to be adjusted.
, can be by the item of each composition being with due regard to described below on specific peeling force (β 1) method of adjustment
Item described in mesh is adjusted.
In addition, the composite sheet of an embodiment of the invention preferably further meets following important documents (III).
Important document (III)：Formed by above-mentioned resin film when forming resin film with film, being determined under above-mentioned stripping conditions (x),
By stripping of the above-mentioned support chip required for being peeled off with the surface (β ') of the above-mentioned resin film of the direct lamination side of above-mentioned support chip
Power (β 2) is 0.02~5.0N/25mm.
It should be noted that in this manual, what " peeling force (β 2) " specified in above-mentioned important document (III) was represented is logical
Cross the value determined in condition and method described in embodiment.
Fig. 3 is to show the resin film formation composite sheet shape on silicon using an embodiment of the invention
The profile of structure during resin film.
For " peeling force (β 2) " specified in important document (III), for example, as shown in Figure 3, defined is by setting
The peeling force of boundary face β 2 between the surface (β ') 32 for the resin film 30 that adipose membrane formation is formed with film and support chip 10.
It should be noted that should be tree as defined in " peeling force (β 2) " in the case where using bonding sheet as support chip
The peeling force of boundary face between the surface (β ') of adipose membrane and the adhesive phase of the bonding sheet used as support chip.
If peeling force (β 2) is more than 0.02N/25mm, it is picked up in the silicon wafer obtained to cutting and obtains core
During piece, there can be a certain degree of confining force relative to chip, therefore it is scattered to suppress the chip before it will be picked up
The phenomenon that ground disperses.
On the other hand, if peeling force (β 2) is below 5.0N/25mm, it can make to carry out the silicon wafer that cutting is obtained
Pick during pickup is good.
From the above point of view, in an embodiment of the invention, above-mentioned peeling force (β 2) be preferably 0.03~
4.0N/25mm, more preferably 0.05~2.5N/25mm, more preferably 0.10~2.0N/25mm, be still more preferably
0.15~1.5N/25mm.
On the other hand, the resin film 30 and silicon formed as the silicon wafer 100 shown in Fig. 3 with being formed by resin film with film
The peeling force (α 2) of boundary face α 2 between the surface (α ') 31 of wafer stack side, is not particularly limited, but is preferably at least
More than the value of above-mentioned peeling force (α 1) and peeling force (β 2).
It should be noted that in an embodiment of the invention, as peeling force (β 2) method of adjustment, without spy
Do not limit, the method for adjustment same with above-mentioned peeling force (β 1) can be enumerated.
In addition, in the case where using bonding sheet as support chip, preferably using with by comprising energy-line solidifying type tree
The bonding sheet of the adhesive phase of the adhesive composition formation of fat.By irradiation energy line, easily make the bonding force of adhesive phase
Reduction, peeling force (β 2) is adjusted to above range.
[each layer for constituting resin film formation composite sheet]
Hereinafter, the resin film formation for constituting an embodiment of the invention is illustrated with each layer of composite sheet.
<Resin film formation film>
The resin film formation film having as the composite sheet of an embodiment of the invention, as long as peeling force (α
And (β 1) film within the above range, but be preferably the resin film comprising component of polymer (A) and curability composition (B) 1)
Formation film.
It should be noted that in the range of effect of the present invention is not destroyed, the resin film formation film can also comprising
Composition (A) and while (B), further comprising selected from inorganic filling material (C), colouring agent (D), coupling agent (E) and general adding
Plus more than a kind in agent (F).
Hereinafter, illustrated for resin film formation with mentioned component (A)~(F) included in film.
In addition, for peeling force (α 1), (β 1) and (β 2) value, can be by the way that the preferred item in following composition be fitted
It is adjusted when combination consideration.
[component of polymer (A)]
In this specification, " component of polymer " refers to that weight average molecular weight (Mw) is more than 20,000 and with least one kind of
The compound of repeat unit.
Component of polymer (A) is contained by the resin film formation film for making to use in an embodiment of the invention, can
Think that it assigns flexible and film forming, so that piece character retentivity is good.
As component of polymer (A) weight average molecular weight (Mw), from the above point of view, preferably more than 20,000, more preferably
For 20,000~3,000,000, more preferably 50,000~2,000,000, be still more preferably 100,000~1,500,000.
It should be noted that in the record of this specification, the value of the weight average molecular weight (Mw) of component of polymer etc. is profit
The value of polystyrene standard is determined and be scaled with gel permeation chromatography (GPC), is based on described in embodiment specifically
Method and the value that determines.
Relative to the gross mass (100 mass %) of resin film formation film, the content of component of polymer (A) is preferably 5~
50 mass %, more preferably 8~40 mass %, more preferably 10~35 mass %, still more preferably be 15~30 matter
Measure %.
It should be noted that in this manual, for example, above-mentioned " relative to the gross mass of resin film formation film
The content of the composition (A) of (100 mass %) " with " relative to as resin film formation film formation material composition in
The gross mass (100 mass %) of active ingredient, the content of composition (A) " be synonymous, contains for other compositions of following explanation
Amount, similarly.
That is, when providing the content of each composition, can be by " relative to the gross mass (100 of resin film formation film
Quality %) " term replace with " relative to as resin film formation film formation material composition active ingredient it is total
The term of quality (100 mass %) ".
Further, above-mentioned " active ingredient " refer in composition except solvent etc. will not be in direct or indirect mode
Composition beyond the material that the physical property of piece to reacting and being formed is impacted, specifically, refers to institute in composition
The composition in addition to water and organic solvent equal solvent contained.
As component of polymer (A), acrylic polymer (A1) is preferably comprised, but it is also possible to include acrylic
Polyester, phenoxy resin, makrolon, polyethers, polyurethane, polysiloxanes, rubber polymer beyond thing (A1) etc. non-third
Alkene acids polymers (A2).
These component of polymer may be used singly or in combination of two or more.
As relative to the resin film formation used in an embodiment of the invention with the polymer included in film into
The content of the acrylic polymer (A1) of the gross mass (100 mass %) of point (A), preferably 50~100 mass %, more preferably
For 60~100 mass %, more preferably 70~100 mass %, be still more preferably 80~100 mass %.
(acrylic polymer (A1))
From the viewpoint of flexible and film forming is assigned for resin film formation film, the weight of acrylic polymer (A1) is equal
Molecular weight (Mw) is preferably 20,000~3,000,000, is more preferably 100,000~1,500,000, is more preferably 150,000~1,200,000, more enters one
Step is preferably 250,000~1,000,000.
Adjusted from by peeling force (α 1), (β 1) and (β 2) to above range, acrylic polymer (A1)
Glass transition temperature (Tg) be preferably more than -40 DEG C, more preferably -20~50 DEG C, more preferably -10~30 DEG C,
Still more preferably it is 0~20 DEG C.
It should be noted that in this manual, the value of the glass transition temperature (Tg) of acrylic polymer etc. is
Will be using following formula (1) calculating with absolute temperature (unit：K) glass transition temperature (the Tg representedK) it is scaled temperature Celsius
Spend (unit：DEG C) value.
[mathematical expression 1]
[in above-mentioned formula (1), W1、W2、W3、W4Represent the mass fraction (matter of the monomer component of composition resin component
Measure %), Tg1、Tg2、Tg3、Tg4Represent the glass transition temperature of the homopolymer of each monomer component of composition resin component
Spend (unit：K).]
As acrylic polymer (A1), the polymer using (methyl) alkyl acrylate as principal component can be enumerated, is had
For body, it is however preferred to have the construction unit of (methyl) alkyl acrylate from the alkyl with carbon number 1~18
(a1) acrylic polymer, is adjusted to above range, more preferably from by peeling force (α 1), (β 1) and (β 2)
For the acrylic copolymer with the other structures unit (a2) beyond construction unit (a1) and construction unit (a1).
Acrylic polymer (A1) may be used singly or in combination of two or more.
It should be noted that in the case that acrylic polymer (A1) is copolymer, the form of the copolymer can be
Any form in block copolymer, random copolymer, alternate copolymer, graft copolymer.
From the viewpoint of flexible and film forming is assigned for resin film formation film, (methyl) of construction unit (a1) is constituted
The carbon number of the alkyl of alkyl acrylate is preferably 1~18, more preferably 1~12, more preferably 1~8.
As (methyl) alkyl acrylate, it can enumerate for example：(methyl) methyl acrylate, (methyl) ethyl acrylate,
(methyl) propyl acrylate, (methyl) butyl acrylate, (methyl) amyl acrylate, (methyl) 2-EHA, (first
Base) Isooctyl acrylate monomer, (methyl) n-octyl, the positive nonyl ester of (methyl) acrylic acid, the different nonyl ester of (methyl) acrylic acid, (first
Base) decyl acrylate, (methyl) lauryl acrylate, (methyl) stearyl acrylate ester etc..
It should be noted that these (methyl) alkyl acrylates may be used singly or in combination of two or more.
Among these, (methyl) alkyl acrylate of the alkyl preferably with carbon number 1~3, more preferably (methyl)
Methyl acrylate.
Relative to the entire infrastructure unit (100 mass %) of acrylic polymer (A1), acrylic polymer (A1)
In be derived from carbon number 1~3 alkyl (methyl) alkyl acrylate construction unit (a1-1) content it is preferred
For 5~98 mass %, more preferably 10~95 mass %, more preferably 20~90 mass %.
It should be noted that being adjusted from by peeling force (α 1), (β 1) and (β 2) to above range, this is used as
The acrylic polymer (A1) used in one embodiment of invention, is preferably to have simultaneously from carbon number 1
The construction unit (a1-1) of (methyl) alkyl acrylate of~3 alkyl and from carbon number 4~18 (be preferably 4
~12, it is more preferably the copolymer of the construction unit (a1-2) of (methyl) alkyl acrylate of 4~alkyl 8).
It is used as construction unit (a1-1) and the content ratio [(a1-1)/(a1-2)] of construction unit (a1-2), preferably 1/99
~99/1, it is more preferably 10/90~90/10, more preferably 15/85~85/15.
Relative to the entire infrastructure unit (100 mass %) of acrylic polymer (A1), acrylic polymer (A1)
In construction unit (a1) content be preferably 50~100 mass %, more preferably 60~99 mass %, more preferably 70
~95 mass %.
In the range of effect of the present invention is not destroyed, acrylic polymer (A1), which can also have, removes said structure unit
(a1) construction unit (a2) from other monomers beyond.
As the monomer for constituting construction unit (a2), it can enumerate for example：Hydroxyl monomer, carboxyl group-containing monomer, containing epoxy radicals
Monomer etc. contains monomer with functional group；The vinyl ester monomer such as vinyl acetate, propionate；Ethene, third
The olefin monomers such as alkene, isobutene；The aromatic vinyl monomers such as styrene, methyl styrene, vinyltoluene；Butadiene,
The diene-based monomers such as isoprene；Nitrile monomers such as (methyl) acrylonitrile etc..
As hydroxyl monomer, it can enumerate for example：(methyl) acrylic acid 2- hydroxy methacrylates, (methyl) acrylic acid 2- hydroxyls third
Ester, (methyl) acrylic acid 3- hydroxy propyl esters, (methyl) acrylic acid 2- hydroxybutyls, (methyl) acrylic acid 3- hydroxybutyls, (first
Base) (methyl) the hydroxyalkyl acrylates class such as acrylic acid 4- hydroxybutyls；Unsaturation alcohols such as vinyl alcohol, allyl alcohol etc..
Among these, preferred (methyl) acrylic acid 2- hydroxy methacrylates.
As carboxyl group-containing monomer, it can enumerate：(methyl) acrylic acid, maleic acid, fumaric acid, itaconic acid etc..
As containing epoxy based monomers, it can enumerate for example：(methyl) glycidyl acrylate, (methyl) acrylic acid Beta-methyl
Ethylene oxidic ester, (methyl) acrylic acid (3,4- epoxycyclohexyls) methyl esters, (methyl) acrylic acid 3- epoxide ring -2- hydroxy propyl esters etc.
(methyl) acrylate containing epoxy radicals；The non-acrylic compounds such as crotons acid glycidyl ester, allyl glycidyl ether contain ring
Epoxide monomer；Etc..
It should be noted that with the acrylic polymer that the Mw from the construction unit containing epoxy based monomers is more than 20,000
It is not curability composition (B) though compound has thermosetting, and the composition being included in component of polymer (A) concept.
Adjusted from by peeling force (α 1), (β 1) and (β 2) to above range, one embodiment of the present invention
The acrylic polymer (A1) used in formula is preferably while having construction unit (a1) and with from hydroxyl monomer
The copolymer of construction unit (a2-1).
Relative to the entire infrastructure unit (100 mass %) of acrylic polymer (A1), acrylic polymer (A1)
In the construction unit (a2-1) from hydroxyl monomer content be preferably 1~40 mass %, more preferably 2~30 matter
Measure %, more preferably 5~25 mass %.
In addition, particularly being adjusted from by peeling force (α 1) to above range, one embodiment of the present invention
The acrylic polymer (A1) used in formula is preferably while having construction unit (a1) and with the knot from nitrile monomer
The copolymer of structure unit (a2-2).
Relative to the entire infrastructure unit (100 mass %) of acrylic polymer (A1), acrylic polymer (A1)
In the construction unit (a2-2) from nitrile monomer content be preferably 1~40 mass %, more preferably 2~35 mass %,
More preferably 5~30 mass %.
If the increase of the content from the construction unit containing epoxy based monomers in acrylic polymer (A1), is present
The tendency that adaptation between gained resin film formation film and silicon wafer increases, the value of peeling force (α 1) rises.Therefore, at this
In one embodiment of invention, the content from the construction unit containing epoxy based monomers in acrylic polymer (A1) is got over
It is few more preferred.
As the content from the construction unit containing epoxy based monomers in acrylic polymer (A1), relative to propylene
The entire infrastructure unit (100 mass %) of acids polymers (A1), preferably 0~4 mass %, more preferably 0~3 mass %,
More preferably 0~2 mass %, still more preferably be 0 mass %.
In addition, in the case of using epoxy-based thermosetting composition as the curability composition (B) described below, carboxyl with
Epoxy radicals in epoxy-based thermosetting composition can react, it is therefore preferable that being derived from acrylic polymer (A1) contains carboxylic
The poor situation of the construction unit of base monomer.
In the case where using epoxy-based thermosetting composition as curability composition (B), relative to acrylic polymer
(A1) entire infrastructure unit (100 mass %), the content of the construction unit from carboxyl group-containing monomer is preferably 0~10 matter
Measure %, more preferably 0~5 mass %, more preferably 0~2 mass %, be still more preferably 0 mass %.
Relative to the entire infrastructure unit (100 mass %) of acrylic polymer (A1), acrylic polymer (A1)
In construction unit (a2) content be preferably 1~40 mass %, more preferably 2~35 mass %, more preferably 5~30
Quality %.
(non-acrylic polymer (A2))
In the resin film formation film used in the present invention, it can also contain as needed and be used as aforesaid propylene acids
The non-acrylic polymer (A2) for the component of polymer that Mw beyond polymer (A1) is more than 20,000.
As non-acrylic polymer (A2), it can enumerate for example：It is polyester, phenoxy resin, makrolon, polyethers, poly-
Urethane, polysiloxanes, rubber polymer etc..
These non-acrylic polymers (A2) may be used singly or in combination of two or more.
It should be noted that though the Mw with epoxy radicals has thermosetting for more than 20,000 phenoxy resin, it is not
Curability composition (B), and the composition being included in non-acrylic polymer (A2).
As non-acrylic polymer (A2) weight average molecular weight (Mw), preferably more than 20,000, more preferably 20,000~
100000, it is more preferably 20,000~80,000.
[curability composition (B)]
Curability composition (B) be the resin film that plays a part of making resin film formation be solidified to form hard with film into
Point.
In the resin film formation film used in the present invention, as curability composition (B), thermosetting component is preferably comprised
(B1) and at least one of energy ray-curable composition (B2), from suppress by resin film formed the resin film formed with film
The viewpoint of color, make viewpoint that curing reaction fully carries out and cut down cost from the viewpoint of, more preferably comprising thermosetting component
(B1)。
As thermosetting component (B1), the chemical combination at least with the functional group that can be reacted by heating is preferably comprised
Thing, the compound (B11) further preferably with epoxy radicals.
In addition, as energy ray-curable composition (B2), preferably comprising has and can be reacted by irradiation energy line
Polymerizable functional group compound (B21).
The functional group that these curability compositions have reacts with each other and forms tridimensional network, is achieved in solid
Change.
(thermosetting component (B1))
It is used as thermosetting component (B1), preferably epoxy-based thermosetting composition.
As epoxy-based thermosetting composition, preferably it is applied in combination while using compound (B11) with epoxy radicals
Thermal curing agents (B12).
It should be noted that compound (B11) and thermal curing agents (B12) with epoxy radicals are that weight average molecular weight (Mw) is small
It is the composition for being different from above-mentioned component of polymer (A) in 20,000 compound.
Weight average molecular weight (Mw) is more than 20,000 compounds with epoxy radicals and thermal curing agents included in component of polymer
(A) in.
As the compound (B11) (hereinafter also referred to " epoxide (B11) ") with epoxy radicals, it can enumerate for example：
Multi-functional epoxy resin, bisphenol-A diglycidyl ether and its hydrogenation thing, the phenolic aldehyde such as o-cresol phenolic epoxy varnish
Type epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol-f type ring
With epoxide more than 2 functions etc. in oxygen tree fat, phenylene matrix type epoxy resin equimolecular.
These epoxides (B11) may be used singly or in combination of two or more.
The weight average molecular weight (Mw) of epoxide (B11) though less than 20,000, from by being applied in combination with composition (A)
And from the viewpoint of suppressing to form the viscosity of the composition of resin film formation film, improving operability etc., preferably 10,000 with
Under, more preferably 100~10,000.
Particularly, adjusted from by peeling force (α 1) to above range, be used as resin film formation film
In the composition for forming material, as epoxide (B11), preferably simultaneously containing the epoxide at 25 DEG C being liquid
With the epoxide of solid.
As the liquid included in said composition epoxide and solid epoxide content ratio [liquid
The epoxide of epoxide/solid], adjusted from by peeling force (α 1) to above range, preferably 5/
95~95/5, be more preferably 10/90~90/10, more preferably 20/80~80/20, still more preferably for 30/70~
70/30。
It should be noted that there are following tendencies：Ratio then peeling force (α 1) of the epoxide of increase liquid
Value it is bigger, the value for increasing the ratio then peeling force (α 1) of the epoxide of solid is smaller.
Relative to the mass parts of composition (A) 100, the content of epoxide (B11) is preferably 1~500 mass parts, more preferably
For 3~300 mass parts, more preferably 10~150 mass parts, be still more preferably 20~120 mass parts.
(thermal curing agents (B12))
Thermal curing agents (B12) function as the curing agent relative to epoxide (B11).
There are more than 2 compounds that can be with the functional group of epoxy reaction as thermal curing agents, in preferably 1 molecule.
As the functional group, it can enumerate：Phenolic hydroxyl group, alcoholic extract hydroxyl group, amino, carboxyl and acid anhydrides etc..It is excellent in these functional groups
Select phenolic hydroxyl group, amino or acid anhydrides, more preferably phenolic hydroxyl group and amino, further preferred amino.
As the phenols thermal curing agents with phenolic group, it can enumerate for example：Multifunctional phenolic resin, bisphenol resin, phenolic aldehyde are clear
Paint shaped phenolic resin, dicyclopentadiene type phenolic resin, XYLOK types phenolic resin, aralkyl-type phenol resin etc..
As the amine thermal curing agents with amino, it can enumerate for example：Dicyandiamide (DICY) etc..
These thermal curing agents (B12) may be used singly or in combination of two or more.
The content of thermal curing agents (B12) is preferably 0.1~500 mass relative to the mass parts of epoxide (B11) 100
Part, more preferably 1~200 mass parts.
(curing accelerator (B13))
For the speed of the heat cure that adjusts resin film formation film, curing accelerator (B13) can also be used.Solidification promotees
Enter agent (B13) to be applied in combination with epoxide (B11) preferably as thermosetting component (B1).
As curing accelerator (B13), it can enumerate for example：Triethylenediamine, benzyldimethylamine, 2,4, triethanolamine, two
The tertiary amines such as methyl amino ethanol, three (dimethylaminomethyl) phenol；2-methylimidazole, 2- phenylimidazoles, 2- phenyl -4- first
The imidazoles such as base imidazoles, 2- phenyl -4,5- bishydroxymethyls imidazoles, 2- phenyl -4- methyl -5- hydroxymethylimidazoles；Tributyl
Organic phosphine such as phosphine, diphenylphosphine, triphenylphosphine；Tetraphenylphosphonium tetraphenyl borate, triphenylphosphine tetraphenylborate etc. four
Phenyl boron salt etc..
These curing accelerators (B13) may be used singly or in combination of two or more.
The band that the cohesive of the resin film formed with film and raising are manufactured using composite sheet is formed by resin film from improving
From the viewpoint of the reliability of the chip of resin film, relative to the total amount 100 of epoxide (B11) and thermal curing agents (B12)
Mass parts, the content of curing accelerator (B13) is preferably 0.01~10 mass parts, is more preferably 0.1~6 mass parts, further
Preferably 0.3~4 mass parts.
(energy ray-curable composition (B2))
As energy ray-curable composition (B2), it can also be used alone with being reacted by irradiation energy line
The compound (B21) of polymerizable functional group, but Photoepolymerizationinitiater initiater preferably is applied in combination while using compound (B21)
(B22)。
(compound (B21) with the functional group reacted by irradiation energy line)
It is (following to be also referred to as the compound (B21) with the polymerizable functional group reacted by irradiation energy line
For " energy line reactive compounds (B21) "), as long as with polymerizable functional groups such as (methyl) acryloyl group, vinyl
Compound, can be enumerated for example：Trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate,
Pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl)
Acrylate, 1,4- butanediols two (methyl) acrylate, 1,6-HD two (methyl) acrylate, oligoester (methyl) third
Olefin(e) acid ester, carbamate (methyl) acrylate quasi-oligomer, epoxy (methyl) acrylate, polyethers (methyl) acrylic acid
Ester, itaconic acid oligomer etc..
These energy line reactive compounds (B21) may be used singly or in combination of two or more.
It should be noted that energy line reactive compounds (B21) are the compounds that weight average molecular weight (Mw) is less than 20,000,
It is the composition for being different from above-mentioned component of polymer (A).
Weight average molecular weight (Mw) is included in component of polymer (A) for more than 20,000 energy line reactive compounds.
The weight average molecular weight (Mw) of energy line reactive compounds (B21) be less than 20,000, preferably 100~15,000,
More preferably 300~10,000.
Relative to the mass parts of composition (A) 100, the content of energy line reactive compounds (B21) is preferably 1~1500 mass
Part, more preferably 3~1200 mass parts.
(Photoepolymerizationinitiater initiater (B22))
By the way that Photoepolymerizationinitiater initiater (B22) is applied in combination while using above-mentioned energy line reactive compounds (B21),
The polymerizing curable time can be shortened, even if reducing light exposure, resin film formation can also carried out with the solidification of film.
As Photoepolymerizationinitiater initiater (B22), it can enumerate for example：Benzoin compound, acetophenone compound, acylphosphine oxide
Compound, cyclopentadiene titanium compound, thioxanthone compounds, peroxide compound etc..
As more specifically Photoepolymerizationinitiater initiater, it can enumerate for example：1- hydroxycyclohexylphenylketones, benzoin, benzoin
Methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl thioether, tetramethylthiuram monosulfide, azo two are different
Butyronitrile, bibenzyl, diacetyl, β-chloroanthraquinone, 2,4,6- trimethyl benzyl diphenyl phosphine oxides etc..
These Photoepolymerizationinitiater initiaters may be used singly or in combination of two or more.
From the viewpoint of from making resin film formation fully be carried out with the curing reaction of film, while suppressing the generation of residue,
Relative to the mass parts of energy line reactive compounds (B21) 100, the content of Photoepolymerizationinitiater initiater (B22) is preferably 0.1~10 matter
Measure part, more preferably 1~5 mass parts.
Relative to the gross mass (100 mass %) of resin film formation film, the content of curability composition (B) is preferably 5~
50 mass %, more preferably 8~40 mass %, more preferably 10~30 mass %, still more preferably be 12~25 matter
Measure %.
It should be noted that the content of curability composition (B) is above-mentioned to include epoxide (B11), thermal curing agents
And the thermosetting component (B1) of curing accelerator (B13) and poly- comprising energy line reactive compounds (B21) and light (B12)
Close the total content of the energy ray-curable composition (B2) of initiator (B22).
[inorganic filling material (C)]
The resin film formation film used in an embodiment of the invention preferably further includes inorganic filling material
(C)。
By the way that comprising inorganic filling material (C), the thermal expansion system of the resin film formed with film can will be formed by resin film
Number is adjusted to appropriate scope, is made being optimal of thermal coefficient of expansion of the chip of tape tree adipose membrane, is assembled with thus, it is possible to improve
The reliability of the semiconductor device of the chip.In addition it is possible to reduce the moisture absorption that the resin film formed with film is formed by resin film
Rate.
As inorganic filling material (C), it can enumerate for example：Silica, aluminum oxide, talcum, calcium carbonate, titanium oxide, oxygen
Change the powder of iron, carborundum, boron nitride etc., these materials are carried out to pearl, mono-crystlling fibre and the glass fibre of spheroidization
Deng.
These inorganic filling materials (C) may be used singly or in combination of two or more.
In these inorganic filling materials, preferably silica and aluminum oxide.
As inorganic filling material (C) average grain diameter, preferably 0.01~50 μm, more preferably 0.05~30 μm, enter
One step is preferably 0.1~10 μm.
It should be noted that in the present invention, the average grain diameter of inorganic filling material (C) is to use laser diffraction and scattering formula
Particle size distribution device and the value determined, refer to volume medium (D50)。
Relative to the gross mass (100 mass %) of resin film formation film, the content of inorganic filling material (C) is preferably 15
~80 mass %, more preferably 20~75 mass %, more preferably 30~70 mass %, still more preferably be 40~65
Quality %, particularly preferably 45~60 mass %.
It should be noted that in the presence of the content of the inorganic filling material in increase resin film formation film, then peeling off
Power (α 1) and the smaller tendency of the value of (β 1) (the particularly value of peeling force (β 1)).
[colouring agent (D)]
The resin film formation film used in an embodiment of the invention preferably further includes colouring agent (D).
By making resin film formation film contain colouring agent (D), by with forming the resin formed with film by resin film
When the semiconductor chip of film is assembled into equipment, it can shield by infrared ray of device generation of surrounding etc., so as to prevent from partly leading
Body chip delays work.
As colouring agent (D), the pigment and dyestuff of organic or inorganic can be used.
As dyestuff, such as acid dyes, reactive dye, direct dyes, disperse dyes, the dye of positive ion in it is any
Dyestuff can be used.
In addition, as pigment, being not particularly limited, it can suitably select to use from known pigment.
Among these, to electromagnetic wave, ultrared shielding is good and can further improve based on laser marking method
From the viewpoint of identity, preferred black pigment.
As black pigment, it can enumerate for example：Carbon black, iron oxide, manganese dioxide, nigrosine, activated carbon etc., but from raising
From the viewpoint of the reliability of semiconductor chip, preferred carbon black.
It should be noted that these colouring agents (D) may be used singly or in combination of two or more.
Relative to the gross mass (100 mass %) of resin film formation film, the content of colouring agent (D) is preferably 0.01~30
Quality %, more preferably 0.05~25 mass %, more preferably 0.1~15 mass %, still more preferably be 0.15~5
Quality %.
[coupling agent (E)]
The resin film formation film used in an embodiment of the invention preferably further includes coupling agent (E).
By the way that comprising coupling agent (E), the resin film formed with film is formed by resin film for gained, it can not destroy resistance to
Its water resistance is set also to be improved in the case of hot.
It is preferably the compound that the functional group having with composition (A), composition (B) reacts as coupling agent (E),
More preferably silane coupler.
As silane coupler, it can enumerate for example：γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxy
Hydroxypropyl methyl diethoxy silane, β-(3,4- epoxycyclohexyls) ethyl trimethoxy silane, γ-(methacryloxy third
Base) trimethoxy silane, gamma-amino propyl trimethoxy silicane, N-6- (amino-ethyl)-gamma-amino propyl trimethoxy silicon
Alkane, N-6- (amino-ethyl)-gamma-amino hydroxypropyl methyl diethoxy silane, N- phenyl-gamma-amino propyl trimethoxy silicane,
γ-urea propyl-triethoxysilicane, γ-mercaptopropyl trimethoxysilane, γ-mercapto hydroxypropyl methyl dimethoxysilane, double (3- tri-
Triethoxysilyl propyl group) tetrasulfide, MTMS, MTES, vinyl trimethoxy
Silane, vinyltriacetoxy silane, imidizole silane etc..
These coupling agents (E) may be used singly or in combination of two or more.
It is used as coupling agent (E), preferably oligomeric coupling agent.
As also include oligomeric coupling agent coupling agent (E) molecular weight, preferably 100~15000, more preferably
150~10000, be more preferably 200~5000, still more preferably for 250~3000, much further preferably from 350~
2000。
It should be noted that by containing coupling agent (E), it is believed that due to meeting and gathering in resin film formation film
Polymer component (A), the surface of silicon wafer as adherend, resin film formation are with the inorganic filling material optionally included in piece
(C) surface combines and improves cementability, coherency, therefore the value of peeling force (α 1) also increases.
Therefore, adjusted from by peeling force (α 1), (β 1) and (β 2) to above range, particularly from adjustment stripping
From the viewpoint of power (α 1), the preferred poor situation of coupling agent (E).
From the above point of view, relative to the gross mass (100 mass %) of resin film formation film, coupling agent (E's) contains
Amount is preferably 0.01~4 mass %, more preferably 0.05~2 mass %, more preferably 0.10~1.5 mass %, more entered
One step is preferably 0.15~1 mass %.
[universal additive (F)]
In the resin film formation film used in an embodiment of the invention, the model of effect of the present invention is not being destroyed
In enclosing, in addition to mentioned component, universal additive (F) can also be contained as needed.
As universal additive (F), it can enumerate for example：Crosslinking agent, levelling agent, plasticizer, antistatic additive, antioxidant, from
Sub- capturing agent, getter, chain-transferring agent etc..
These universal additive (F) respective contents are excellent relative to the gross mass (100 mass %) of resin film formation film
Elect 0~10 mass %, more preferably 0~5 mass %, more preferably 0~2 mass % as.
<The manufacture method of resin film formation film>
As the manufacture method of the resin film formation film of an embodiment of the invention, it is not particularly limited, can profit
Manufactured with known method.
For example, after the resin film formation composition comprising above-mentioned each composition is prepared, being suitably added organic solvent and entering
Row dilution, obtains the solution of resin film formation composition.Then, by the solution of the resin film formation composition known in
Coating method be coated on the support chip 10,10 ' shown in Fig. 1 and form film, and make the dried coating film, thus can be formed
Resin film formation film.
As the organic solvent of the solution for preparing resin film formation composition, it can enumerate for example：Toluene, acetic acid second
Ester, MEK etc..
It with the solid component concentration of the solution of composition is preferably 10 to coordinate the resin film formation in the case of organic solvent
~80 mass %, more preferably 20~70 mass %, more preferably 30~65 mass %.
As coating method, it can enumerate for example：Spin-coating method, spraying process, stick coating method, scraper for coating method, rolling method, roller cutter painting
Cloth method, knife coating, die coating method, gravure coating process etc..
The resin film formation film can be individual layer, can also be more than 2 layers of sandwich construction.
When manufacturing more than 2 layers of the resin film formation film of sandwich construction, for example, passing through the support chip more than 2
On be respectively coated the solution of resin film formation composition and form film, and each film of formation is overlapped and film is carried out
Folded film, is then dried, film is used it is possible thereby to manufacture the resin film being made up of sandwich construction and formed.
It should be noted that the thickness for the resin film formation film that the composite sheet of an embodiment of the invention has
Can suitably it be set according to purposes, preferably 3~300 μm, more preferably 5~250 μm, more preferably 7~200 μm.Need
It is noted that in the case that resin film formation is sandwich construction with film, it is also preferred that its gross thickness is within the above range.
<Support chip>
As the support chip used in an embodiment of the invention, can enumerate only be made up of base material piece, in base material
The upper bonding sheet with adhesive phase.
The support chip that the composite sheet of an embodiment of the invention has is to play to prevent in resin film formation piece
Surface attachment dust etc. stripping film or in cutting action etc. to resin film formation with cutting that the face of piece is protected
The sheet material of the effect of pitch cutting etc..
As the thickness of support chip, can suitably be selected according to purposes, but from for composite sheet assign it is sufficiently flexible, make phase
For silicon wafer stickup it is good from the viewpoint of, preferably 10~500 μm, more preferably 20~350 μm, further preferably
For 30~200 μm.
It should be noted that for the thickness of above-mentioned support chip, the thickness for the base material for constituting support chip is not only included,
In the case of with adhesive phase, the thickness also comprising these layers or film.
(base material)
It is used as the base material for constituting support chip, preferably resin film.
As the resin film, it can enumerate for example：Low density polyethylene (LDPE) (LDPE) film, straight-chain low density polyethylene (LLDPE)
The polyethylene films such as film, ethylene-propylene copolymer film, polypropylene screen, polybutene film, polybutadiene film, polymethylpentene film, polychlorostyrene
Vinyl film, vinyl chloride copolymer film, polyethylene terephthalate film, poly (ethylene naphthalate) film, poly- terephthaldehyde
Sour butanediol ester film, polyurethane film, vinyl-vinyl acetate copolymer film, ionomer resin film, ethene-(methyl) acrylic acid
Co-polymer membrane, ethene-(methyl) acrylate copolymer film, polystyrene film, polycarbonate membrane, polyimide film, fluororesin
Film etc..
The base material used in an embodiment of the invention can be the monofilm being made up of a kind of resin film, can also
It is by the stack membrane of two or more resin film lamination.
In addition, in an embodiment of the invention, the surface to base materials such as above-mentioned resin films can also be used real
Piece is as support chip obtained from applying surface treatment.
These resin films can also be cross linking membrane.
Furthermore it is also possible to using piece obtained from being coloured to these resin films or implement piece obtained from printing etc..
Further, resin film can be film obtained from thermoplastic resin is made into piece by extrusion molding or
Stretched film, can also use and obtain curable resin using piece is made after given method progress filming and solidification
Film.
In these resin films, there is expansion adaptability from excellent heat resistance and due to the flexibility with appropriateness, also hold
Easily keep from the viewpoint of pickup adaptability, preferably comprise the base material of polypropylene screen.
It should be noted that can be the list being only made up of polypropylene screen as the structure of the base material comprising polypropylene screen
Rotating fields or the sandwich construction being made up of polypropylene screen and other resin films.
In the case of resin film formation film is heat cured, constituting the resin film of base material has heat resistance, thus can suppress
By the damage of thermally-induced base material, so as to suppress the generation of the undesirable condition in the manufacturing process of semiconductor device.
As support chip, in the case where using the piece being only made up of base material, the base material and resin film formation film are used as
Surface (β) contact face surface tension, adjusted from by peeling force (β 1) to above range, preferably 20~
50mN/m, more preferably 23~45mN/m, more preferably 25~40mN/m.
As constitute support chip base material thickness, preferably 10~500 μm, more preferably 15~300 μm, further it is excellent
Elect 20~200 μm as.
(bonding sheet)
As the bonding sheet for being used as support chip in an embodiment of the invention, above-mentioned resin film etc. can be set forth in
There is the bonding sheet of the adhesive phase formed by adhesive on base material.
It is adhesive as the formation material of adhesive phase, the adhesive composition comprising resin of binding property can be enumerated, should
Can be further containing universal additives such as above-mentioned crosslinking agent, tackifier in adhesive composition.
As the resin of binding property, in the case where being conceived to the structure of the resin, can enumerate such as acrylic resin,
Urethane based resin, rubber resin, organic silicon resin, vinyl ethers resinoid etc., are being conceived to the work(of the resin
In the case of energy, it can enumerate such as energy line solidification type adhesive.
In an embodiment of the invention, adjust to the viewpoint of above range from by peeling force (β 2) and make to pick up
From the viewpoint of taking property is good, preferably with the adhesive phase formed by the adhesive composition comprising energy-line solidifying type resin
Bonding sheet.
As energy-line solidifying type resin, as long as the tree with polymerizable groups such as (methyl) acryloyl group, vinyl
Fat, but be preferably the resin of binding property with polymerizable group.
In addition, being adjusted from by peeling force (β 1) and (β 2) to above range, acrylic compounds tree is preferably comprised
The adhesive of fat.
It is used as the acrylic resin, it is however preferred to have third of the construction unit (x1) from (methyl) alkyl acrylate
Alkene acids polymers, the propylene more preferably with construction unit (x1) and from the construction unit (x2) containing monomer
Acid copolymer.
The carbon number for the alkyl having as above-mentioned (methyl) alkyl acrylate, preferably 1~18, more preferably
1~12, it is more preferably 1~8.
As (methyl) alkyl acrylate, (methyl) alkyl acrylate of said structure unit (a1) can be enumerated and constituted
Those (methyl) alkyl acrylates of base ester identical.
It should be noted that (methyl) alkyl acrylate may be used singly or in combination of two or more.
Relative to the entire infrastructure unit (100 mass %) of acrylic polymer, the content of construction unit (x1) is usual
For 50~100 mass %, preferably 50~99.9 mass %, more preferably 60~99 mass %, more preferably 70~95
Quality %.
Contain monomer as above-mentioned, can enumerate for example：Hydroxyl monomer, carboxyl group-containing monomer, containing epoxy based monomers etc.,
The concrete example of each monomer can be enumerated and those monomers of the identical of example as the monomer for constituting construction unit (a2).
It should be noted that these monomers may be used singly or in combination of two or more.
Relative to the entire infrastructure unit (100 mass %) of acrylic polymer, the content of construction unit (x2) is usual
For 0~40 mass %, preferably 0.1~40 mass %, more preferably 1~30 mass %, more preferably 5~20 matter
Measure %.
In addition, can make with above-mentioned knot as the acrylic resin used in an embodiment of the invention
Structure unit (x1) and (x2) acrylic copolymer further react and obtained with the compound with energy line polymerizable group
The energy-line solidifying type acrylic resin arrived.
As the compound with energy line polymerizable group, as long as it is poly- with (methyl) acryloyl group, vinyl etc.
The compound of conjunction property group.
In the case of using the adhesive comprising acrylic resin, adjusted from by peeling force (β 1) and (β 2) to above-mentioned model
From the viewpoint of enclosing, preferably also contain crosslinking agent while containing acrylic resin.
As the crosslinking agent, it can enumerate for example：Isocyanates crosslinking agent, imines crosslinking agent, epoxies crosslinking agent, Evil
Oxazolines crosslinking agent, Carbodiimides crosslinking agent etc., adjust to the viewpoint of above range from by peeling force (β 1) and (β 2)
Hair, preferred isocyanate class crosslinking agent.
Relative to the gross mass (100 mass parts) of acrylic resin contained in above-mentioned adhesive, the content of crosslinking agent
Preferably 0.01~20 mass parts, more preferably 0.1~15 mass parts, more preferably 0.5~10 mass parts, further
Preferably 1~8 mass parts.
By utilizing known coating method coating adhesive on the above-mentioned resin film as base material, and make what is formed
Dried coating film and form stripping film, it is hereby achieved that the support chip being made up of the base material for implementing lift-off processing.
It should be noted that for adhesive, further can also add retarder thinner and solution morphology is made or is made
The form of emulsion.
It should be noted that in order that as bonding strong between the resin film and adhesive phase of base material, can also root
Implement the further provided for contouring processing based on sandblasting, solvent processing etc. according to the face to the adhesive phase to be set of resin film is needed；Corona is put
Electric treatment, electron beam irradiation, corona treatment, ozone processing, ultraviolet treatment with irradiation, flame treatment, chromic acid processing, hot blast
The oxidation processes such as processing；And primary coat processing etc..
As the surface tension of the adhesive phase of bonding sheet, adjust to the viewpoint of above range from by peeling force (β 1)
Hair, more preferably preferably 20~50mN/m, more preferably 23~45mN/m, 25~40mN/m.
The thickness of adhesive phase is preferably 1~100 μm, more preferably 2~80 μm, particularly preferably 3~50 μm.
<Fixture adhesive linkage>
Fixture adhesive linkage can be formed by the double-sided adhesive sheet with base material (core) or formed by adhesive.
As the base material (core), the resin film that can act as above-mentioned base material, preferably polypropylene screen and polychlorostyrene can be enumerated
Vinyl film.
In addition, as above-mentioned adhesive, the bonding with the formation material of the adhesive phase as above-mentioned bonding sheet can be enumerated
Agent identical adhesive.
The thickness of fixture adhesive linkage is preferably 1~200 μm, more preferably 5~100 μm, more preferably 10~70 μm.
<Slide glass>
As slide glass, as long as the material that can be peeled off when in use, is not particularly limited, it can enumerate and can act as
The resin film of above-mentioned base material, implement lift-off processing on the surface of the resin film obtained from piece etc..
The thickness of slide glass is not particularly limited, preferably 1~200 μm, more preferably 5~150 μm, more preferably 10
~100 μm.
[purposes of resin film formation composite sheet]
The chip that the composite sheet of an embodiment of the invention can be pasted on upside-down mounting mode is led with semiconductor wafer, partly
The back side of the workpiece such as body chip and resin film is formed on workpiece.The resin film has protection semiconductor wafer, semiconductor chip
Deng the function as diaphragm at the back side of workpiece.For example, in the case where being pasted on semiconductor wafer, resin film has reinforcement
The function of chip, breakage therefore, it is possible to prevent chip etc..
The composite sheet of an embodiment of the invention forms the resin film formed with film by resin film and can also assigned
It is used as the function of adhesive film.Adhesive film is generally glued to back side of semiconductor wafer etc., is cut by cutting action
Into after chip one by one, loaded (welding) and be attached portion in the given of substrate etc., by heat curing processes by
For being adhesively fixed for semiconductor chip.
In addition, the composite sheet of an embodiment of the invention can be as being used for when carrying out blade cutting, laser cutting
The piece of the workpiece such as fixed semiconductor wafer is used, and is cut without laminating cutting sheet in addition, can simplify semiconductor device
Manufacturing process.
In addition, in so-called DBG (dicing before grinding) method (by from the circuit surface side of semiconductor wafer
Form the groove deeper than the chip thickness to be obtained and the thinning processing of at least arrival slot carried out from the rear side of semiconductor wafer,
So as to the method for obtaining chipset) in, the composite sheet of the present invention can also be used, can be pasted on and have passed through singualtion
Chipset and use.
[manufacture method of the chip of tape tree adipose membrane]
Hereinafter, the one of the method for the chip of tape tree adipose membrane is manufactured for the composite sheet using an embodiment of the invention
Example is illustrated.
For example, the manufacture method of the chip as the tape tree adipose membrane of an embodiment of the invention, can be enumerated under having
State the method cut based on blade of process (1)~(4).
Process (1)：The work of the resin film formation composite sheet of an embodiment of the invention is pasted at the back side of workpiece
Sequence
Process (2)：The process cut to workpiece
Process (3)：The process that resin film is formed with film is formed by resin film
Process (4)：Pick up the process through have passed through the workpiece of cutting obtained from process (2) and obtain chip
It should be noted that in the manufacture method of the chip of the tape tree adipose membrane of an embodiment of the invention, process
(1) order of process (2)~(4) after is not limited, for example, it may be the order of " process (1), (2), (3), (4) ",
It can be the order of " process (1), (3), (2), (4) ", can also be the order of " process (1), (2), (4), (3) ".
<Process (1)>
Process (1) is to paste the resin film of the composite sheet of an embodiment of the invention at the back side of the workpiece such as silicon wafer
The process of formation film.
The workpiece used in this process can be silicon wafer, alternatively, it is also possible to being that the compound semiconductor of gallium and arsenic etc. is brilliant
Piece.In addition, for semiconductor wafer, can also in its circuit forming surface, while carry out appropriate grinding etc. to its back side,
So that its thickness reaches 50~500 μm or so.
Here, the releasable of composite sheet of the invention is excellent, therefore in this process, in the stickup of workpiece and composite sheet
Fail in the case of being smoothed out, re-posted can be carried out.That is, temporarily having pasted composite sheet on the back side of workpiece
Resin film formation film, also the composite sheet can thoroughly be peeled off from workpiece.Due to the workpiece after composite sheet is peeled off
Surface be not likely to produce the residue of resin film formation film, therefore, it is possible to realize the recycling of the workpiece.
<Process (2)>
Process (2) is that the circuit for forming workpiece together with its surface is cut, so that chip is processed
Process.
It should be noted that can be obtained by process (1) as the workpiece of the object cut in this process
To tape tree adipose membrane formation film workpiece or tape tree adipose membrane obtained from first passing through process (3) after the process (1)
Workpiece.
It should be noted that the cutting of workpiece can be carried out using known method.
Here, in the case of after process (1) by this process, obtain have passed through the tape tree adipose membrane formation film of cutting
Workpiece, and formed in process (3) behind by resin film and form resin film with film, so that the band of cutting can be obtained have passed through
The workpiece of resin film.
On the other hand, in the case of after process (1) by process (3), in this process, the work of tape tree adipose membrane is carried out
The cutting of part, so that the workpiece of the tape tree adipose membrane of cutting can be obtained have passed through.
<Process (3)>
Process (3) is to form the process that resin film is formed with film by the resin film for being pasted on the composite sheet of workpiece.
Generally, resin film makes resin film formation be solidified to form with film, but if resin film formation has with film itself
There is the function of diaphragm, adhesive film, then directly can also regard uncured resin film formation film as resin film.
It should be noted that the resin film formed can be the film or part generation solidified completely
The film of solidification, but be preferably the film solidified completely.
For the solidification of resin film formation film, according to the kind of curability composition contained in resin film formation film
Class, any curing mode that can be by heat cure and in the solidification of the irradiation based on energy line is carried out.
As the condition in the case of progress heat cure, solidification temperature is preferably 100~150 DEG C, and hardening time is preferably 1
~3 hours.
In addition, as the condition in the case of the solidification for carrying out the irradiation based on energy line, can be according to used energy
The species of line and suitably set.For example, in the case of using ultraviolet, illumination is preferably 170~250mw/cm2, light quantity is
600~1000mJ/cm2。
<Process (4)>
Process (4) is to utilize the universal machines such as collet chuck (collet) to the workpiece through have passed through cutting obtained from process (2)
The process that structure is picked up and obtains chip.By passing through this process, it can obtain have passed through the chip of singualtion.
Make in process (3) in the case that resin film formation has been solidified to form resin film with film, if from resin film
The value of peeling force (β 2) required for the above-mentioned support chip of surface (β ') stripping then picks up adaptability well in above range, can
Improve the productivity of the chip of tape tree adipose membrane.
It should be noted that on from the stripping required for the sur-face peeling support chip of uncured resin film formation film
The value of power, preferably also with above-mentioned peeling force (β 2) identical scope.
Used by uncured resin film formed with film with as support chip bonding sheet lamination composite sheet
In the case of, the bonding sheet is preferably with the adhesive formed by the adhesive composition comprising energy-line solidifying type resin
Layer.
As long as the bonding sheet with such adhesive phase, then can be by the front irradiation of the picking task in this process
Energy line and reduce the bonding force of adhesive phase, so as to obtain good pick.It is believed that by irradiating energy in this wise
Line is measured, will be easily adjusted to from uncured resin film formation with the value of the peeling force required for the sur-face peeling of the film bonding sheet
The scope in the same manner as above-mentioned peeling force (β 2).
, can be by being arranged on base in upside-down mounting mode for the chip by tape tree adipose membrane obtained from above process
Material etc. is upper and manufactures semiconductor device.In addition, for resin film have as adhesive film function tape tree adipose membrane chip and
Speech, can also manufacture half by being bonded on other components such as brilliant pad portion or other semiconductor chips (in chip carrying portion)
Conductor device.
Embodiment
In following record, the weight average molecular weight (Mw) and glass transition temperature (Tg) of each composition are by following institute
The value that the method shown is determined or calculated.
<Weight average molecular weight (Mw)>
Using gel permeation chromatography device (TOSOH Co., Ltd's system, product name " HLC-8220GPC ") in following conditions
Under be measured, used through polystyrene standard convert and determine value.
(condition determination)
Chromatographic column：“TSK guard column HXL-H”“TSK gel GMHXL(×2)”“TSK gel
G2000HXL " (is manufactured) by TOSOH Co., Ltd
Column temperature：40℃
Developing solvent：Tetrahydrofuran
Flow velocity：1.0mL/min
<Glass transition temperature (Tg)>
The value calculated by above-mentioned formula (1) is used.
Embodiment 1~9, comparative example 1
Each composition of species shown in table 1 and use level (active ingredient ratio) is mixed, and carried out using MEK
Dilution, is prepared for the solution of the resin film formation composition of the mass % of solid component concentration 61 resin film formation film.
Then, be made up of the resin film with the surface for implementing lift-off processing slide glass (Lindeke Co., Ltd's system,
Trade name " SP-PET3811 ", thickness：38 μm) the surface for implementing lift-off processing on, be coated with the resin film formation combination
The solution of thing, and carried out in 120 DEG C drying process in 2 minutes.Then, the resin film that 25 μm of thickness is formed on the slide glass is formed
With film, make and the laminated body constituted with film (1) is formed by slide glass and resin film.
Then, on the resin film formation film of laminated body (1) in support chip (I)~(VII) of species shown in laminating table 1
Any support chip, having made lamination successively has the laminated body (2) of support chip, resin film formation film and slide glass.
It should be noted that in the case where using support chip (I), (II), (IV)~(VII), resin film formation is used
The adhesive phase of film and these support chips is fitted in the way of direct lamination, so as to make laminated body (2).
The resin film formation of embodiment and comparative example is detailed with each composition described in the table 1 used in the preparation of composition
Feelings are as described below.
<Component of polymer>
·(A-1)：The acrylic acid copolymer formed by ethyl acrylate (EA), n-butyl acrylate (BA) and acrylonitrile (AN)
Thing (Mw=85 ten thousand, Tg=12 DEG C).
·(A-2)：Acrylic copolymer (the MA/ formed by methyl acrylate (MA) and acrylic acid 2- hydroxy methacrylates (HEA)
HEA=85/15 (quality %), Mw=37 ten thousand, Tg=6 DEG C).
·(A-3)：By methyl acrylate (MA), n-butyl acrylate (BA), acrylic acid 2- hydroxy methacrylates (HEA) and methyl
Acrylic copolymer (MA/BA/HEA/GMA=70/10/15/5 (quality %), the Mw of glycidyl acrylate (GMA) formation
=80 ten thousand, Tg=-1 DEG C).
<Curability composition>
·(B-1)：Bisphenol A type epoxy resin (Mitsubishi chemical Co., Ltd's system, trade name " jER828 ", at 25 DEG C is liquid
Body, the compound equivalent to epoxide (B11)).
·(B-2)：Bisphenol A type epoxy resin (Mitsubishi chemical Co., Ltd's system, trade name " jER1055 ", at 25 DEG C is solid
Body, the compound equivalent to epoxide (B11)).
·(B-3)：Dicyclopentadiene type epoxy resin (DIC (strain) system, trade name " Epiclon HP-7200HH ", 25 DEG C
It is solid, the compound equivalent to oxygen compound (B11) down).
·(B-4)：Amine system curing agent (ADEKA (strain) system, trade name " Adeka Hardener 3636AS ", equivalent to heat
The compound of curing agent (B12)).
·(B-5)：Curing accelerator (Shikoku Chem's system, trade name " CUREZOL 2PHZ ", equivalent to
The compound of curing accelerator (B13)).
<Inorganic filling material>
·(C-1)：Silica filler (Admatechs company systems, trade name " SC2050MA ").
<Colouring agent>
·(D-1)：Carbon black (Mitsubishi chemical Co., Ltd's system, trade name " #MA650 ").
<Silane coupler>
·(E-1)：Silane coupler (Nippon Unicar (strain) systems, trade name " A-1110 ").
In addition, that Details as Follows is described for support chip described in the table 1 used in embodiment and comparative example.
Support chip (I)：
Have on a side surface of 80 μm of polypropylene screen (Mitsubishi Plastics Inc's system) of thickness by adhesive (i) shape
Into 90 μm of thickness adhesive phase bonding sheet (surface tension=30mN/m on the surface of adhesive phase).
The adhesive (i) is included by 2-EHA (2EHA), methyl methacrylate (MMA) and acrylic acid
The acrylic resin (2EHA/MMA/HEA=60/30/10 (quality %), Mw=50 ten thousand) 100 of 2- hydroxy methacrylates (HEA) formation
Mass parts (solid constituent) and 3 function XDI class crosslinking agent (Mitsui Takeda Chemical
(strain) system, trade name " Takenate D110N ") 10 mass parts (solid constituent).
Support chip (II)：
Have on a side surface of 80 μm of polypropylene screen (Mitsubishi Plastics Inc's system) of thickness by adhesive (ii)
The bonding sheet (surface tension=33mN/m on the surface of adhesive phase) of the adhesive phase of 90 μm of the thickness of formation.
The adhesive (ii) is included by 2-EHA (2EHA), methyl methacrylate (MMA) and acrylic acid
The acrylic resin (2EHA/MMA/HEA=60/30/10 (quality %), Mw=50 ten thousand) 100 of 2- hydroxy methacrylates (HEA) formation
Mass parts (solid constituent) and 3 function XDI class crosslinking agent (Mitsui Takeda Chemical
(strain) system, trade name " Takenate D110N ") 5 mass parts (solid constituent ratio).
Support chip (III)：
The support being only made up of the polypropylene screen (Mitsubishi Plastics Inc's system, surface tension=35mN/m) of 80 μm of thickness
Piece.
Support chip (IV)：
Have on a side surface of 80 μm of polypropylene screen (Mitsubishi Plastics Inc's system) of thickness by energy line curing
The bonding sheet of the adhesive phase of 90 μm of the thickness of type adhesive (iii) formation.
The energy line solidification type adhesive (iii) is included：Make the mass parts of 2-EHA (2EHA) 40, acetic acid
Prepolymer (2EHA/VAc/ obtained from the mass parts of vinyl acetate (VAc) 40, the mass parts copolymerization of acrylic acid 2- hydroxy methacrylates (HEA) 20
HEA=40/40/20 (quality %)) further (make metering system with the mass parts of methacrylic acid 2- isocyanato ethyls 21.4
100 moles of % of hydroxyl of the isocyanato- base of sour 2- isocyanato ethyls relative to HEA are 80 moles of % amount) reaction and
Obtained energy-line solidifying type acrylic copolymer (weight average molecular weight:60 ten thousand) 100 mass parts (solid constituents)；And 3 officials
Can XDI class crosslinking agent (Mitsui Takeda Chemical (strain) systems, trade name " Takenate
D110N ") 5 mass parts (solid constituent).
Support chip (V)：
Have on a side surface of 80 μm of polypropylene screen (Mitsubishi Plastics Inc's system) of thickness by adhesive (iv)
The bonding sheet (surface tension=33mN/m on the surface of adhesive phase) of the adhesive phase of 10 μm of the thickness of formation.
The adhesive (iv) is included by butyl acrylate (BA), methyl acrylate (MA) and acrylic acid 2- hydroxy methacrylates
(HEA) formed acrylic resin (BA/MA/HEA=60/30/10 (quality %), Mw=80 ten thousand) 100 mass parts (solid into
Point) and 3 function XDI class crosslinking agents (Mitsui Takeda Chemical (strain) systems, trade name
" Takenate D110N ") 1 mass parts (solid constituent).
Support chip (VI)：
Have on a side surface of 80 μm of polypropylene screen (Mitsubishi Plastics Inc's system) of thickness by adhesive (v) shape
Into 10 μm of thickness adhesive phase bonding sheet (surface tension=29mN/m on the surface of adhesive phase).
The adhesive (v) is included by 2-EHA (2EHA), methyl methacrylate (MMA) and acrylic acid 2-
Acrylic resin (2EHA/MMA/HEA=50/40/10 (quality %), Mw=80 ten thousand) 100 matter of hydroxy methacrylate (HEA) formation
Measure part (solid constituent) and 3 function XDI class crosslinking agent (Mitsui Takeda Chemical (strain)
System, trade name " Takenate D110N ") 10 mass parts (solid constituent).
Support chip (VII)：
Have on a side surface of 80 μm of polypropylene screen (Mitsubishi Plastics Inc's system) of thickness by adhesive (vi)
The bonding sheet (surface tension=33mN/m on the surface of adhesive phase) of the adhesive phase of 10 μm of the thickness of formation.
The adhesive (vi) is included by butyl acrylate (BA), methyl acrylate (MA) and acrylic acid 2- hydroxy methacrylates
(HEA) formed acrylic resin (BA/MA/HEA=60/30/10 (quality %), Mw=80 ten thousand) 100 mass parts (solid into
Point) and 3 function XDI class crosslinking agents (Mitsui Takeda Chemical (strain) systems, trade name
" Takenate D110N ") 2 mass parts (solid constituent).
Using the laminated body (1) made in embodiment and comparative example and (2), peeling force (α has been carried out using following methods
1), (β 1) and (β 2) measure.In addition, using laminated body (2), shelling again relative to silicon wafer has been carried out using following methods
From the evaluation of property.These results are as shown in table 1.
<The measure of peeling force (α 1)>
Adhesive tape (the Lin get Ke as lining band is pasted on the surface of the exposed resin film formation film of laminated body (1)
Co. Ltd. system, trade name " PET25PLShin ", there is the thickness comprising acrylic resin on the PET film of 25 μm of thickness
The bonding sheet of 20 μm of adhesive phase), and horizontal 25mm × vertical 150mm size is cut into, system, which is tested, uses sample.
The slide glass of the test specimen is removed, laminating machine (Fuji Co. Ltd. systems, product name " LAMIPACKER is used
LPD3214 ") by the surface of exposed resin film formation film and the silicon wafer (diameter for implementing dry type polishing grinding：6 inches,
Thickness：500 μm) surface pasted, and stand 30 minutes.
After standing, accurate universal testing machine (Shimadzu Scisakusho Ltd's system, product name " Autograph AG- are used
IS "), with 180 ° of peel angle, 23 DEG C of temperature, 300mm/ points of progress tension tests of draw speed are determined, are determined above-mentioned lining
Load when band and test specimen are peeled off from silicon wafer together.
Measured length is set to 100mm, and the initial 10mm and last 10mm of measure are removed from virtual value.Gained is determined
Maximum in value is recorded in table 1 as peeling force (α 1).
<The measure of peeling force (β 1)>
Laminated body (2) is cut into horizontal 25mm × vertical 150mm size, slide glass is removed, resin film formation film will be exposed
The sample on surface be used as test specimen.
The exposed resin film of the supporting plate formed by polymethyl methacrylate and the test specimen is formed with film
Surface via two-sided tape (the two sides of 25 μm of base material of the thickness formed by polyethylene terephthalate respectively have by
The two-sided tape of the adhesive phase of 10 μm of the thickness of acrylic adhesives formation) fitted, and stand 30 minutes.
It should be noted that the two-sided tape be have can be by supporting plate and resin film formation film in tension test
The adhesive tape of fixed bonding force.
After standing, accurate universal testing machine (Shimadzu Scisakusho Ltd's system, product name " Autograph AG- are used
IS "), with 180 ° of peel angle, 23 DEG C of temperature, 300mm/ points of progress tension tests of draw speed are determined, are determined from resin film
Load when any support chip in support chip (I)~(IV) is peeled off on the surface (β) of formation film.
Measured length is set to 100mm, and the initial 10mm and last 10mm of measure are removed from virtual value.Gained is determined
Minimum value in value is recorded in table 1 as peeling force (β 1).
<The measure of peeling force (β 2)>
Laminated body (2) is cut into horizontal 25mm × vertical 150mm size, slide glass is removed, resin film formation film will be exposed
The sample on surface be used as test specimen.
Using laminating machine (Fuji Co. Ltd. systems, product name " LAMIPACKER LPD3214 ") by exposed resin film shape
Into the silicon wafer (diameter with the surface of film with implementing dry type polishing grinding：6 inches, thickness：500 μm) surface glued
Patch, and stand 30 minutes.
After standing, carry out heating for 2 hours in 130 DEG C, resin film formation is solidified to form resin film with film, with peeling force
The measure of (β 1) is similarly carried out, and determines load when support chip (I)~(IV) is peeled off from the surface (β ') of the resin film.
It should be noted that for embodiment 4, after resin film is formed, using (the Lin get Ke plants of formula meetings of UV irradiation units
Society's system, trade name " RAD2000m/8 ") irradiation ultraviolet radiation (illumination：220mW/cm2, light quantity：190mJ/cm2) after, carry out above-mentioned
Determine.
Measured length is set to 100mm, and the initial 10mm and last 10mm of measure are removed from virtual value.Gained is determined
Minimum value in value is recorded in table 1 as peeling force (β 2).
<Relative to the evaluation of the releasable of silicon wafer>
Laminated body (2) is cut into horizontal 25mm × vertical 150mm size, slide glass is removed, resin film formation film will be exposed
The sample on surface (β) be used as test specimen.
Using laminating machine (Fuji Co. Ltd. systems, product name " LAMIPACKER LPD3214 ") by exposed resin film shape
Into the silicon wafer (diameter with the surface of film with implementing dry type polishing grinding：6 inches, thickness:500 μm) surface glued
Patch, and stand 30 minutes.
After standing, accurate universal testing machine (Shimadzu Scisakusho Ltd's system, product name " Autograph AG- are used
IS "), with 180 ° of peel angle, 23 DEG C of temperature, draw speed 300mm/ points are determined from silicon wafer by the test specimen (support chip
And resin film formation film) peel off, enter for the part that resin film formation film whether is attached with the surface of silicon wafer
Go and visually observed.On this basis, the releasable relative to silicon wafer is evaluated according to following benchmark.
·“A+”：Do not observe the attachment of resin film formation film on the surface of silicon wafer.
·“A”：Do not observe more than the diameter 5mm of resin film formation film attachment on the surface of silicon wafer, though
The attachment that diameter is less than 5mm, but the degree can fully to be removed using alcohol etc. so seldom are confirmed.
·“B”：Do not observe more than the diameter 10mm of resin film formation film attachment on the surface of silicon wafer, though
The attachment that a little diameter is less than 10mm, but the degree can fully to be removed using alcohol etc. are so confirmed.
·“C”：More than the diameter 10mm of resin film formation film attachment has been confirmed on the surface of silicon wafer, and
And also it is difficult by the removing such as alcohol.
As shown in Table 1, compared with the resin film formation film of comparative example 1, it is being used as an embodiment of the invention
The releasable of the resin film formation film made in embodiment 1~9 is excellent.
Industrial applicibility
The resin film formation of an embodiment of the invention is with composite sheet suitably as the back side of protection semiconductor chip
Diaphragm formation material or the formation material of brilliant pad portion or the adhesive film on other positions can be adhered to.
Claims (9)
1. a kind of resin film formation composite sheet, there is the direct lamination on support chip to have the resin film that can form resin film for it
The structure of formation film, and meet following important documents (I) and (II)：
Important document (I)：Will treat with silicon wafer paste side the resin film formation film surface (α) paste on silicon it
Afterwards, it is being determined in 23 DEG C of environment, under draw speed 300mm/ points and the stripping conditions (x) of 180 ° of draw angle, this is set
It is 0.05~10.0N/25mm that adipose membrane formation film peels off required peeling force (α 1) from the silicon wafer；
Important document (II)：It is being determined under the stripping conditions (x), by the support chip from the direct lamination side of the support chip
Resin film formation required peeling force (β 1) is peeled off with the surface (β) of film is value more than peeling force (α 1).
2. resin film formation composite sheet according to claim 1, it also meets following important documents (III),
Important document (III)：Formed by the resin film when forming resin film with film, it is being determined under the stripping conditions (x), by institute
State peeling force (β of the support chip required for being peeled off with the surface (β ') of the resin film of the direct lamination side of the support chip
2) it is 0.02~5.0N/25mm.
3. resin film formation composite sheet according to claim 1 or 2, wherein, peeling force (β 1) is 0.05~20.0N/
25mm。
4. according to resin film formation composite sheet according to any one of claims 1 to 3, wherein, the support chip be only by
The piece that base material is constituted.
5. according to resin film formation composite sheet according to any one of claims 1 to 3, wherein, the support chip is in base
There is the bonding sheet of adhesive phase on material,
The resin film formation is straight with the surface (β) of adhesive phase of the composite sheet with the bonding sheet and the resin film formation film
Connect the structure of lamination.
6. resin film formation composite sheet according to claim 5, wherein, described adhesive layer is by consolidating comprising energy line
The layer of the adhesive composition formation of change type resin.
7. according to resin film formation composite sheet according to any one of claims 1 to 6, wherein, the resin film formation is used
Film includes component of polymer (A) and curability composition (B).
8. according to resin film formation composite sheet according to any one of claims 1 to 7, wherein, the resin film formation is used
Film is the formation material of diaphragm or adhesive film.
9. a kind of manufacture method of the chip of tape tree adipose membrane, it has following processes (1)~(4),
Process (1)：The work of resin film formation composite sheet according to any one of claims 1 to 8 is pasted at the back side of workpiece
Sequence；
Process (2)：The process cut to workpiece；
Process (3)：The process that resin film is formed with film is formed by resin film；
Process (4)：Pickup obtained from process (2) through have passed through the workpiece of cutting, so as to obtain the process of chip.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-021479 | 2015-02-05 | ||
| JP2015021479 | 2015-02-05 | ||
| PCT/JP2016/053259 WO2016125835A1 (en) | 2015-02-05 | 2016-02-03 | Resin-film forming composite sheet, and method of manufacturing chip having resin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107210205A true CN107210205A (en) | 2017-09-26 |
| CN107210205B CN107210205B (en) | 2021-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680008033.8A Active CN107210205B (en) | 2015-02-05 | 2016-02-03 | Composite sheet for forming resin film, and method for producing chip with resin film |
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| Country | Link |
|---|---|
| JP (1) | JP6423458B2 (en) |
| KR (1) | KR102594777B1 (en) |
| CN (1) | CN107210205B (en) |
| SG (1) | SG11201706309VA (en) |
| TW (1) | TWI689412B (en) |
| WO (1) | WO2016125835A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111902507A (en) * | 2018-03-23 | 2020-11-06 | Mti株式会社 | Wafer level backside tape and method for making the same |
| CN111954703A (en) * | 2018-03-30 | 2020-11-17 | 琳得科株式会社 | Laminate for preventing warpage of cured sealing body, and method for producing cured sealing body |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6658648B2 (en) * | 2017-03-28 | 2020-03-04 | 味の素株式会社 | Photosensitive resin composition |
| JP7137575B2 (en) * | 2017-10-27 | 2022-09-14 | リンテック株式会社 | Film for forming protective film, composite sheet for forming protective film, and method for producing semiconductor chip |
| JP7540885B2 (en) * | 2019-11-21 | 2024-08-27 | リンテック株式会社 | Kit and method for producing third laminate using said kit |
| JP2022153305A (en) * | 2021-03-29 | 2022-10-12 | リンテック株式会社 | Dicing bonding sheet and method for manufacturing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010056328A (en) * | 2008-08-28 | 2010-03-11 | Furukawa Electric Co Ltd:The | Film for chip protection |
| CN102161869A (en) * | 2009-12-24 | 2011-08-24 | 日东电工株式会社 | Dicing tape-integrated film for semiconductor back surface |
| JP2011228637A (en) * | 2010-03-30 | 2011-11-10 | Furukawa Electric Co Ltd:The | Chip protecting film |
| CN104040696A (en) * | 2011-12-26 | 2014-09-10 | 琳得科株式会社 | Dicing sheet with protective film-forming layer, and method for producing chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009138026A (en) | 2007-12-03 | 2009-06-25 | Furukawa Electric Co Ltd:The | Energy ray-curable chip protecting film |
| JP5805367B2 (en) | 2009-01-30 | 2015-11-04 | 日東電工株式会社 | Dicing tape integrated wafer back surface protection film |
-
2016
- 2016-02-03 WO PCT/JP2016/053259 patent/WO2016125835A1/en active Application Filing
- 2016-02-03 CN CN201680008033.8A patent/CN107210205B/en active Active
- 2016-02-03 SG SG11201706309VA patent/SG11201706309VA/en unknown
- 2016-02-03 KR KR1020177021552A patent/KR102594777B1/en active IP Right Grant
- 2016-02-03 JP JP2016573405A patent/JP6423458B2/en active Active
- 2016-02-03 TW TW105103476A patent/TWI689412B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010056328A (en) * | 2008-08-28 | 2010-03-11 | Furukawa Electric Co Ltd:The | Film for chip protection |
| CN102161869A (en) * | 2009-12-24 | 2011-08-24 | 日东电工株式会社 | Dicing tape-integrated film for semiconductor back surface |
| JP2011228637A (en) * | 2010-03-30 | 2011-11-10 | Furukawa Electric Co Ltd:The | Chip protecting film |
| CN104040696A (en) * | 2011-12-26 | 2014-09-10 | 琳得科株式会社 | Dicing sheet with protective film-forming layer, and method for producing chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111902507A (en) * | 2018-03-23 | 2020-11-06 | Mti株式会社 | Wafer level backside tape and method for making the same |
| CN111954703A (en) * | 2018-03-30 | 2020-11-17 | 琳得科株式会社 | Laminate for preventing warpage of cured sealing body, and method for producing cured sealing body |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201702072A (en) | 2017-01-16 |
| TWI689412B (en) | 2020-04-01 |
| JPWO2016125835A1 (en) | 2017-11-16 |
| SG11201706309VA (en) | 2017-09-28 |
| CN107210205B (en) | 2021-06-15 |
| JP6423458B2 (en) | 2018-11-14 |
| KR20170115048A (en) | 2017-10-16 |
| WO2016125835A1 (en) | 2016-08-11 |
| KR102594777B1 (en) | 2023-10-26 |
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