CN106374008B - A kind of preparation method of large area sensor array - Google Patents
A kind of preparation method of large area sensor array Download PDFInfo
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- CN106374008B CN106374008B CN201610811920.0A CN201610811920A CN106374008B CN 106374008 B CN106374008 B CN 106374008B CN 201610811920 A CN201610811920 A CN 201610811920A CN 106374008 B CN106374008 B CN 106374008B
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- H—ELECTRICITY
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Abstract
The present invention discloses a kind of large area sensor array preparation method, and detailed process is：Repeatedly expansion crystalline substance is carried out to photoelectric sensor wafer array and turns over the brilliant operation of brilliant expansion, expand the spacing of adjacent wafers, can be suitable with the position of the electrode contact point on the circuit switch substrate for needing to match and interval until expanding brilliant obtained photoelectric sensor wafer array arrangement specification；Repeatedly expansion crystalline substance is turned over to the photoelectric sensor wafer array after brilliant expansion crystalline substance to be combined with circuit switch substrate, wire bonding is carried out again to complete the electrical and physical connection of photoelectric sensor wafer array and circuit switch substrate, then array package is carried out, photoelectric sensor wafer array after packaging covers corresponding microlens window array, so as to obtain large area sensor array.Large area sensor wafer array proposed by the present invention for light network, it is shorter relative to the production time needed for traditional production technique when preparing sensor array of the same area, it is more efficient, it is more suitable for large quantities of volume productions.
Description
Technical field
The present invention relates to optical communication field, more particularly, to a kind of large area sensor array for light network
Preparation method.
Background technology
With developing rapidly for semiconductor industry, photoelectric sensor is changed in photoelectric energy, signal detection collection, biology doctor
Picture is studied, light network and optic communication etc. are widely used.Electrical interconnection transmission bandwidth is smaller, time delay is larger, at a high speed
The shortcomings of crosstalk is larger between signal, power consumption is high, have become the bottleneck for being electrically interconnected and further breaking through.Light network is as a kind of new
Interconnection mode, there is high communication bandwidth, relatively low power consumption, can solve the problems, such as development is electrically interconnected well limited.
With the development of technique, increasingly miniaturization, the low-power consumption of high speed optoelectronic device, the application of light network technology is also slowly
Develop between chip with chip internal.
The signal transmission rate that traditional single optical transmitting set is equipped with the optical interconnection system of single optical receiver composition is limited
In the switching rate of optical transmitting set and the speed of response of optical receiver, speed of opening the light and the speed of response are faster, then signal transmission speed
Rate is faster.Though the small area light emitter arrays of small spacing and corresponding optical receiver array can form multipath signal propagation,
Raising signal transmission rate is connect, but because beam array caused by light emitter arrays can be sent out during free space transmission
Raw scattering phenomenon, so as to have influence on adjacent channel, the crosstalk between channel is produced, and signal transmission distance is bigger, crosstalk
It is more serious, so as to influence the stability of signal transmission.
The content of the invention
For overcome the deficiencies in the prior art, present invention firstly provides a kind of large area sensor array preparation method,
To achieve these goals, the technical scheme is that：
A kind of large area sensor array preparation method, detailed process are：
It is brilliant to the multiple expansion of photoelectric sensor wafer array progress-to turn over the brilliant spacing for operating, expanding adjacent wafers of crystalline substance-expansion, directly
It can be connect to brilliant obtained photoelectric sensor wafer array arrangement specification is expanded with the electrode on the circuit switch substrate for needing to match
The position and interval of contact are suitable；
By it is multiple expand it is brilliant-turn over the photoelectric sensor wafer array after crystalline substance-expansion crystalline substance and combined with circuit switch substrate, then drawn
Line bonding then carries out array envelope to complete the electrical and physical connection of photoelectric sensor wafer array and circuit switch substrate
Dress, photoelectric sensor wafer array after packaging covers corresponding microlens window array, so as to obtain large area sensor array
Row.
Preferably, under dustless electrostatic environment, to the photoelectric sensor wafer battle array being initially attached on UV films or blue film
Row do repeatedly expand it is brilliant-turn over the brilliant operation of crystalline substance-expansion, specifically when expanding brilliant first using expanding brilliant machine to entering with photoelectric sensor wafer array
Row expands crystalline substance, is completely bonded with another new UV film with expanding the wafer side of the brilliant film finished after expansion crystalline substance is complete, reuses ultraviolet light
It is irradiated to expanding the brilliant film finished, the UV films finished up to expansion is brilliant remove the film when minimum to the viscosity of wafer, with regard to this, expand brilliant
The photoelectric sensor wafer array finished has been transferred on new UV films, brilliant expand next time；This so is repeated
Step, can be with the electrode contact point on circuit switch substrate until expanding brilliant obtained photoelectric sensor wafer array arrangement specification
Position and interval it is suitable.
Preferably, the substrate of the photoelectric sensor wafer array obtained by turning over for the last time after the completion of film deviates from UV films, light
The routing electrode of electric transducer wafer array is adhered to each other with UV films.
Preferably, by it is multiple expand it is brilliant-turn over the photoelectric sensor wafer array after crystalline substance-expansion crystalline substance and combined with circuit switch substrate,
Specifically：By it is multiple expand it is brilliant-turn over the photoelectric sensor wafer array after crystalline substance-expansion crystalline substance and be all attached on UV films, circuit switch base
Pad on plate sprays scolding tin or conductive silver glue or anisotropic conductive adhesive；After wafer array is combined with circuit switch substrate, then
With ultraviolet light UV films, until the stickiness of UV films is minimum, then UV films are removed；Wherein the material of circuit switch substrate is printing
Circuit board, silicon-based etch plate or flexible PCB.
Preferably, the surface of the circuit switch substrate is applied to white.
Preferably, the photoelectric sensor wafer array after wire bonding is carried out by array package, encapsulation using transparent silica gel
Method is divided into two kinds according to different situations：
If obtained photoelectric sensor wafer array spacings are less than preset value, take and photoelectric sensor wafer array is entered
The overall injection liquid-state silicon gel method for packing of row, to ensure that the encapsulation of the incident light plane of sensor wafer is smooth, using corresponding mould
To determine to encapsulate shape, after encapsulation, mould is removed；
If obtained photoelectric sensor wafer array spacings are more than or equal to preset value, use to each sensor wafer
Liquid-state silicon gel method is separately injected into, is needed likewise, to ensure that each sensor wafer incident light plane is smooth, during encapsulation corresponding
Mould determines that its encapsulates shape, and encapsulation finished, and mould is removed.
Preferably, photoelectric sensor wafer array after packaging covers corresponding microlens window array, wherein lens window
Each microlens window in mouth array corresponds to each sensor wafer of photoelectric sensor wafer array, accordingly, should
The size dimension of microlens window array, the area of single lens window, the interval of adjacent lens window is all according to through above-mentioned steps
The size dimension of the photoelectric sensor wafer array of preparation, the area of single wafer, the gap size of adjacent wafers determine.
The photoelectric sensor wafer array for covering microlens window array is interconnected with optical transmitting set, and output end is connected to
Wave filter；Its median filter is low pass, high pass, with one kind in resistance or bandpass filter.
The signal that the present invention is equipped with the optical interconnection system of single optical receiver composition for traditional single optical transmitting set passes
Defeated rate-constrained is in the switching rate of optical transmitting set and the speed of response of optical receiver, the small area light emitter arrays of small spacing
Crosstalk is larger between the light network channel of corresponding optical receiver array formation, proposes a kind of for the big of big spacing light network
The preparation method of area array sensor.
Compared with prior art, beneficial effects of the present invention are：Large area proposed by the present invention for light network senses
Device wafer array, first, when preparing sensor array of the same area, the present invention is relative to production needed for traditional production technique
Time is shorter, more efficient, is more suitable for large quantities of volume productions；Secondly, adjacent channel is being overcome to interfere the aspect present invention than passing
Small pitch sensors array of uniting has higher performance；Furthermore the present invention can give birth to flexibly and efficiently according to different application occasion
Produce the sensor array of customization.
Brief description of the drawings
Fig. 1 is single conventional photoelectric sensor packaged type schematic diagram.
Fig. 2 is that single expands brilliant schematic diagram.
Fig. 3 is the expansion schematic diagram that wafer is combined with adapter plate for circuit after brilliant.
Fig. 4 is by microlens window array schematic diagram.
Fig. 5 is the preparation flow figure of large area sensor array.
Fig. 6 is that light network integrates schematic diagram.
Embodiment
The present invention will be further described below in conjunction with the accompanying drawings, but embodiments of the present invention are not limited to this.
Each label in figure：1- supports, 2- pins, 3- tube cores, 4- collector lenses, 5- expand brilliant ring, 6- photoelectric sensor wafers
Wafer array, 9- adapter plate for circuit, 10- duplex light interlinkings signal, 11- letters after array, 7- indigo plants film or UV films, 8- expansions are brilliant
Road, 12- microlens windows, 13- silica gel packagings, 14- wafer arrays.
In general, single conventional photoelectric sensor packaged type are as shown in Figure 1.Photoelectric sensor is by one or two
The semiconductor devices of PN junction composition, has unilateral conduction.Photodiode makes the area of PN junction in design and making as far as possible
(window condenser area) is relatively large, to receive incident light.Photodiode works under backward voltage effect, does not have
When having illumination, reverse current is extremely faint, and electric current now is referred to as dark current；When having illumination, reverse current is rapidly increased to several
Ten microamperes, referred to as photoelectric current.The intensity of light is bigger, and reverse current is also bigger.The change of light causes photodiode current to change,
Optical signal is converted into electric signal by this can, turns into optoelectronic sensor.
The present invention is by the big spacing large area photoelectric sensing array applied to light network of expansion crystal technique, its preparation process
Including：
1. more than expansion is brilliant：Photosensor arrays are carried by the company of production sensor wafer used by the present embodiment
The photoelectric sensor wafer array being attached on ultraviolet (UV) film supplied.Because what photoelectric sensor wafer company provided is adhered to
Photoelectric sensor wafer array spacings are smaller, in order that photosensor arrays can be more preferable subsequently with circuit switch substrate
With reference to so it is brilliant that expansion is done according to the position of circuit switch substrate Top electrode contact point and the gap size of adjacent electrode contact point
Processing.Because the ductility of general UV films is limited, the photoelectric sensor wafer array single for causing to be adhered on UV films expands intergranular
Every very little.In order that photoelectric sensor wafer array being capable of photoelectric sensor wafer electrode contact point perfection corresponding with substrate
With reference to can be done to the photoelectric sensor wafer array being attached on UV films and repeatedly expand brilliant --- turning over film --- and expand brilliant processing (this
Series of steps must be carried out under dustless electrostatic environment).Accordingly, using the brilliant machine of expansion to photoelectric sensor wafer when expanding brilliant
Array carries out expanding crystalline substance, is completely bonded with another new UV film with expanding the wafer side of the brilliant film finished after expanding crystalline substance, then make
It is irradiated with ultraviolet light to expanding the brilliant film finished, the UV films finished up to expansion is brilliant remove the film when minimum to the viscosity of wafer,
With regard to this, expand the brilliant photosensor arrays finished and be transferred on new UV films, it is brilliant expand next time, pay attention to ultraviolet
When illumination is shifted, cause that ultraviolet light is minimum to new UV films irradiated area, otherwise can cause new UV films by ultraviolet lighting as far as possible
Influence and fail.The step is so repeated, until expanding brilliant obtained photoelectric sensor wafer array arrangement specification (wafer
Position, adjacent spaces) can be suitable with the position of the electrode contact point on circuit switch substrate and interval.It should be noted that most
The photoelectric sensor wafer array being adhered on UV films obtained afterwards is characterised by that the substrate of wafer deviates from UV films, wafer
Routing electrode is adhered to each other with UV films, with this convenient follow-up switching and wire bonding step.Single expands brilliant schematic diagram such as Fig. 2 institutes
Show.
2. combined with adapter plate for circuit：In the photoelectric transfer that after repeatedly expanding crystalline substance and reaching space requirement, will be adhered on film
Adapter plate for circuit of the underlayer electrode of each wafer of sensor wafer array under certain condition disposably with respective design enters
Row electrically and physically combines, and corresponding circuit switch plate material is printed circuit board (PCB), silicon-based etch plate or flexible PCB, is shown
It is intended to as shown in Figure 3.Photoelectric sensor wafer is all attached on UV films when this step should be noted that switching, and circuit turns
Pad on fishplate bar sprays scolding tin or conductive silver glue or anisotropic conductive adhesive.If welding material is scolding tin, it is contemplated that scolding tin is easy
The characteristics of solidifying at normal temperatures, so to operate (300-500 degrees Celsius) at high temperature；If welding material is anisotropic conductive adhesive,
Then need in certain temperature and give wafer array certain pressure, photoelectric sensor wafer array could be caused to turn with circuit
Fishplate bar is physically and electrically connected.After photoelectric sensor wafer array and the firm combination of pinboard, then use ultraviolet light
UV films, until the stickiness of UV films is minimum, then UV films are removed.In addition, the work of electric current is just produced according to photoelectric sensor absorption light
Make principle, peak efficiency, the table of pinboard are obtained when being worked for the photoelectric sensor that utility the inventive method is prepared
Face needs to be applied as white, absorbs incident light to minimize pinboard.
3. wire bonding：After photoelectric sensor wafer array is combined with adapter plate for circuit, the substrate of each wafer (namely
An electrode of photoelectric sensor) pad of corresponding with adapter plate for circuit design be electrically connected (by scolding tin or
Anisotropic conductive adhesive combination).Again by supersonic bonding machine by another electrode of each wafer of wafer array on pinboard with electricity
The pad of corresponding design carries out wire bonding on the pinboard of road, so far, just completes photoelectric sensor wafer array and turns with circuit
The electrical and physical connection of fishplate bar.
4. array package：Wire bonding causes photoelectric sensor wafer array to establish physical electrical with adapter plate for circuit
Connection, to ensure that large area photosensor arrays prepared by the present invention can be used in a variety of occasions as far as possible, that is, ensure
Its stability, antidetonation crash resistance, so with transparent silica gel by the wafer array package after wire bonding.Method for packing is according to difference
Situation is divided into two kinds, if the photoelectric sensor wafer array spacings finally given are smaller, can take and wafer array is carried out
Overall injection liquid-state silicon gel method for packing, to ensure that the encapsulation of the incident light plane of wafer array is smooth, it is necessary to using corresponding mould
To determine to encapsulate shape, after encapsulation, mould is removed.If the photoelectric sensor wafer array spacings finally given are larger,
Usage amount to silica gel will be increased using overall package method, so as to improve production cost.Now can be to each wafer list
Solely injection liquid-state silicon gel method, corresponding mould is needed likewise, to ensure that each wafer incident light plane is smooth, during encapsulation true
Fixed its encapsulates shape, and encapsulation is finished, and mould is removed.
5. microlens window Array Design：After encapsulation, to improve the efficiency of light absorption of photosensor arrays, in light
Layer of transparent plastic lens window array is covered on electric transducer array.As shown in figure 4, each in the microlens window array
Microlens window corresponds to each photoelectric sensor wafer of photosensor arrays.Accordingly, the microlens window array is big
Small size, the area of single lens window, the interval of adjacent lens window is all according to the photoelectric sensor prepared through above-mentioned steps
The size dimension of array, the area of single wafer, the gap size of adjacent wafers determine.
6. light network integrates：As shown in fig. 6, photosensor arrays and optical transmitting set are interconnected, and output end is connected
To corresponding wave filter, the wave filter can be low pass depending on applicable cases of the present invention, high pass, band resistance, bandpass filter.
After the filtered device filtering of multichannel light collection signal, gathered via signal acquisition process device, store and handle, finally realize optical interconnection
And optic communication.
To sum up, a kind of preparation flow of large area sensor array proposed by the present invention is as shown in figure 5, including to sensor
The multiple expansion crystalline substance of wafer array progress-turn over the brilliant spacing for operating, expanding adjacent sensors of crystalline substance-expansion, subsequently realization is disposably integrated into
On switching circuit board and it is packaged, and covers corresponding microlens window array, when in use, is equipped with corresponding collection and filtering
Circuit, then the reception to multipath light signal can be realized, realizes light network and optic communication.
The embodiment of invention described above, is not intended to limit the scope of the present invention..It is any in this hair
Made modifications, equivalent substitutions and improvements etc. within bright spiritual principles, it should be included in the claim protection of the present invention
Within the scope of.
Claims (6)
1. a kind of large area sensor array preparation method, it is characterised in that detailed process is：To photoelectric sensor wafer array
Progress repeatedly expands crystalline substance one and turns over the brilliant operation of the expansion of crystalline substance one, expands the spacing of adjacent wafers, until expanding the photoelectric sensor wafer that crystalline substance obtains
Array arrangement specification can be suitable with the position of the electrode contact point on the circuit switch substrate for needing to match and interval；Will be multiple
Expand crystalline substance one turn over crystalline substance one expand it is brilliant after photoelectric sensor wafer array combined with circuit switch substrate, then carry out wire bonding to complete
The electrical and physical connection of photoelectric sensor wafer array and circuit switch substrate, then carries out array package, after packaging
Photoelectric sensor wafer array covers corresponding microlens window array, so as to obtain large area sensor array；
Under dustless electrostatic environment, the photoelectric sensor wafer array being initially attached on UV films or blue film is done and repeatedly expands crystalline substance
One, which turns over crystalline substance one, expands crystalline substance operation, specifically expands when expanding brilliant first using brilliant machine is expanded to carrying out expanding crystalline substance with photoelectric sensor wafer array
Completely it is bonded with another new UV film with expanding the wafer side of the brilliant film finished after crystalline substance is complete, reuses ultraviolet light and finished to expanding crystalline substance
Film be irradiated, until expand the brilliant UV films finished it is minimum to the degree of eating of wafer when remove the film, with regard to this, expand the brilliant photoelectricity finished
Sensor wafer array has been transferred on new UV films, brilliant expand next time；The step is so repeated, until expanding
Photoelectric sensor wafer array that crystalline substance obtains arrangement specification can with the position of the electrode contact point on circuit switch substrate and
Every suitable.
2. large area sensor array preparation method according to claim 1, it is characterised in that turn over film completion for the last time
The substrate of resulting photoelectric sensor wafer array deviates from UV films, routing electrode and the UV films of photoelectric sensor wafer array afterwards
It is adhered to each other.
3. large area sensor array preparation method according to claim 1, it is characterised in that turn over the multiple crystalline substance one that expands
Photoelectric sensor wafer array after crystalline substance-expansion crystalline substance is combined with circuit switch substrate, is specifically:It is brilliant that multiple expansion crystalline substance one is turned over into the expansion of crystalline substance one
Photoelectric sensor wafer array afterwards is all attached on UV films, and the pad on circuit switch substrate sprays scolding tin or conductive silver glue
Or anisotropic conductive adhesive;After wafer array is combined with circuit switch substrate, then with ultraviolet light UV films, until UV films are eaten
Property it is minimum, then UV films are removed;Wherein the material of circuit switch substrate is printed circuit board (PCB), silicon-based etch plate or flexible circuit
Plate.
4. large area sensor array preparation method according to claim 1, it is characterised in that the circuit switch substrate
Surface applied to white.
5. large area sensor array preparation method according to claim 1, it is characterised in that will be drawn using transparent silica gel
Photoelectric sensor wafer array after line bonding carries out array package, and method for packing is divided into two kinds according to different situations：If obtain
Photoelectric sensor wafer array spacings be less than preset value, then take and overall injection liquid carried out to photoelectric sensor wafer array
Silica gel packaging method, to ensure that the encapsulation of the incident light plane of sensor wafer is smooth, determine to encapsulate shape using corresponding mould,
After encapsulation, mould is removed；If obtained photoelectric sensor wafer array spacings are more than or equal to preset value, use to every
Individual sensor wafer is separately injected into liquid-state silicon gel method, likewise, to ensure that each sensor wafer incident light plane is smooth, encapsulation
When need corresponding mould to determine that its encapsulates shape, encapsulation finished, and mould is removed.
6. large area sensor array preparation method according to claim 1, it is characterised in that photoelectric transfer after packaging
Sensor wafer array covers corresponding microlens window array, and wherein each microlens window in microlens window array corresponds to light
Each sensor wafer of electric transducer wafer array, accordingly, the size dimension of the microlens window array, single lens window
The area of mouth, the interval of adjacent lens window is all according to the size chi of the photoelectric sensor wafer array prepared through above-mentioned steps
Very little, the area of single wafer, the gap size of adjacent wafers determines.
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| CN108615772B (en) * | 2018-05-17 | 2020-05-12 | 中国科学院微电子研究所 | Packaging structure of sensor and manufacturing method thereof |
| CN110571307B (en) * | 2019-09-16 | 2021-06-01 | 无锡中微晶园电子有限公司 | Photoelectric detection product bonding wire coating process |
| CN110783431A (en) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第四十四研究所 | Manufacturing method of APD array device |
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| CN105210171A (en) * | 2012-10-30 | 2015-12-30 | 希百特股份有限公司 | Led die dispersal in displays and light panels with preserving neighboring relationship |
| CN105720146A (en) * | 2016-04-12 | 2016-06-29 | 中山大学 | Large-area electrode LED array preparation method |
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| US8759930B2 (en) * | 2012-09-10 | 2014-06-24 | Optiz, Inc. | Low profile image sensor package |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105210171A (en) * | 2012-10-30 | 2015-12-30 | 希百特股份有限公司 | Led die dispersal in displays and light panels with preserving neighboring relationship |
| CN105720146A (en) * | 2016-04-12 | 2016-06-29 | 中山大学 | Large-area electrode LED array preparation method |
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