CN104425316A - Layer separation apparatus - Google Patents

Layer separation apparatus Download PDF

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Publication number
CN104425316A
CN104425316A CN201410427746.0A CN201410427746A CN104425316A CN 104425316 A CN104425316 A CN 104425316A CN 201410427746 A CN201410427746 A CN 201410427746A CN 104425316 A CN104425316 A CN 104425316A
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China
Prior art keywords
light
substrate
layer
device substrate
separation equipment
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CN201410427746.0A
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CN104425316B (en
Inventor
沈亨基
金锺明
白种化
金炳秀
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AP Cells Inc
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AP Cells Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Laser Beam Processing (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a layer separation apparatus, and especially relates to an apparatus used for separating a coating layer from a basic substrate in a flexible display process. The layer separation apparatus of an embodiment of the present invention comprises: a cavity having an internal space and provided with a window at the upper wall thereof; a laser radiation unit configured to radiate a laser beam to the internal space through the window; a light source sensor configured to emit light to a device substrate arranged in the internal space and receive the light reflected from the device substrate; a display unit configured to display a light receiving value measured from the light source sensor; and a substrate transfer plate configured to support the device substrate in the internal space of the cavity so as to transfer the device substrate to slide below the window in the period of laser beam radiation process and transfer the device substrate to slide below the light source sensor after the laser beam radiation process is finished.

Description

Layer separation equipment
Technical field
The present invention relates to a kind of layer separation equipment, and more particularly, relate to a kind of in flexible display technique by equipment that coating layer is separated with base substrate.
Background technology
Monocrystalline or polysilicon transistors are owing to being widely used in display because of the excellent switching characteristic caused by high electron mobility.Need under predetermined temperature or higher temperature, to perform heat treatment under nitrogen atmosphere for manufacturing the silicon transistor with excellent switching characteristic, and due to high treatment temperature, the glass substrate at high temperature with low heat distortion is used as base substrate for the film forming silicon transistor.
As display of future generation, extensive flexible display to manufacturing in a variety of manners (such as, not only thin and light but also shock resistance, flexibility and flexible flexible display) is studied.Due to the less flexible characteristic of silicon transistor and the restriction in base substrate, be difficult to silicon transistor to be applied to flexible display.In recent years, as a kind of method for the manufacture of flexible semiconductor device, to a kind of method for thin glass plate being used as substrate, a kind of for metallic plate being used as the method for substrate and a kind of for using the method for plastic to study.
(a) to (f) of Fig. 1 illustrates a kind of example of the method for the manufacture of AMOLED flexible semiconductor device.
Base substrate 11 is provided, and illustrated by (b) of Fig. 1, coat plastics coating layer 12 thinly on the top surface of base substrate 11 illustrated by (a) of Fig. 1.Plastic-coated layer 12 is made up of the sustainable polyimides (polyimide, PI) for Technology for Heating Processing.Then, illustrated by (c) of Fig. 1, the top surface of plastic-coated layer 12 is formed multiple semiconductor device 13, namely, Stimulated Light low temperature polycrystalline silicon (laser low-temperature polysilicon, LTPS) active matrix organic light-emitting diode (active matrix organic light emitting diode, the AMOLED) device of technique.After the top surface of plastic-coated layer 12 is formed multiple semiconductor device 13, illustrated by (d) of Fig. 1, upper space forms upper strata diaphragm 14.After formation upper strata diaphragm 14, illustrated by (e) of Fig. 1, the plastic-coated layer 12 be formed on the top surface of base substrate 11 is separated with base substrate 11.After this, illustrated by (f) of Fig. 1, the basal surface of the plastic-coated layer 12 be separated with base substrate 11 forms lower-layer overcoat film 15, so obtain final flexible OLED-device.
In this situation, the method for the interfacial separation between the base substrate performed in (e) of Fig. 1 by using laser lift-off (laser lift-off, LLO) technique to remove base substrate 11 and plastic-coated layer.In other words, reduce the bonding strength between base substrate 11 and plastic-coated layer 12 by the radiation of laser (L), and then base substrate 11 is separated with plastic-coated layer 12 and removes base substrate 11.
But in the related, the interfacial separation between base substrate 11 and plastic-coated layer 12 is checked by means of only bore hole, and do not exist for usage data to check the method for the state of interfacial separation.Therefore, be unreliable and inaccurate to the inspection of interfacial separation.
[relate art literature]
[patent documentation]
Patent documentation 1: the 10-2011-0131017 korean patent application publication
Summary of the invention
The invention provides a kind of for by base substrate and plastic-coated layer equipment separated from one another.The present invention also provides a kind of equipment for checking base substrate whether to be separated with plastic-coated layer.The present invention also strengthens the reliability whether be separated with plastic-coated layer inspection base substrate.
According to one exemplary embodiment, a kind of layer separation equipment comprises: chamber, has inner space and wall is provided with window thereon; Laser emission unit, to be configured to bombardment with laser beams by described window on described inner space; Light source sensor, is configured to towards the device substrate utilizing emitted light be arranged in described inner space and receives the light from device substrate reflection; Display unit, is configured to show the light-receiving value measured from described light source sensor; And substrate transfer plate, be configured to support described device substrate in the described inner space of described chamber to transmit described device substrate to slide in described beneath window and to transmit described device substrate with in described light source sensor slid underneath after completing described bombardment with laser beams technique during bombardment with laser beams technique.
And, described layer separation equipment can also comprise: inspection processing unit, be configured to determine whether described light-receiving value drops in reference range, and produce the successful alarm of interfacial separation when described light-receiving value drops in reference range, and produce the alarm of interfacial separation failure when described light-receiving value is outside reference range.
And when described light-receiving value is outside described reference range, described device substrate can again be passed and use bombardment with laser beams.
And described device substrate can comprise sequentially stacking base substrate, plastic-coated layer, semiconductor device and diaphragm, and by the surface of substrate based on the surface of laser beam radiation.
And, described plastic-coated layer can be and is selected from each any one following: PEN (polyethylenenaphthelate, PEN), PETG (polyethyleneterephthalate, PET), Merlon (polycarbonate, PC), PPSU (polyethylene sulfone, PES), polyimides (polyimide, PI), polyallyl compound (polyallylate, PAR), polycyclic olefin (polycyclicolefin, PCO), polymethyl methacrylate (polymethylmethacrylate, PMMA), cross-linking type epoxy resin (cross-linking type epoxt) and cross-linked type polyurethane film (cross-linking type urethane film).
Accompanying drawing explanation
One exemplary embodiment can be understood in more detail by reference to the accompanying drawings from following description.
(a) to (f) of Fig. 1 illustrates a kind of example for the manufacture of the method for active matrix organic light-emitting diode (AMOLED) flexible semiconductor device.
Fig. 2 illustrates according to the layer separation equipment of one exemplary embodiment, wherein by bombardment with laser beams on semiconductor device substrate.
Fig. 3 illustrates the layer separation equipment according to one exemplary embodiment, is wherein carried out the layer separation of checking semiconductor device substrate by light source sensor.
Fig. 4 illustrates the substrate table according to one exemplary embodiment.
Fig. 5 illustrates according to the semiconductor device substrate on the substrate transfer plate of one exemplary embodiment.
Fig. 6 is the conceptual cross-sectional face figure of the light source sensor configured by RGB transducer illustrated according to one exemplary embodiment.
Fig. 7 illustrates according to one exemplary embodiment at the light will transmitted and received by light source sensor after on bombardment with laser beams to the surface of base substrate.
Whether successfully Fig. 8 is the conceptual block diagram of the separation for inspected layer separation equipment according to one exemplary embodiment.
Fig. 9 shows the image with the extra display unit of input link according to one exemplary embodiment.
Figure 10 illustrates the situation of bombardment with laser beams in two treatment chamber according to one exemplary embodiment.
Figure 11 explanation uses light source sensor to carry out the situation of the inspection that execution level is separated according to one exemplary embodiment in two treatment chamber.
Main element label declaration:
10: substrate
10a: the first semiconductor device substrate
10b: the second semiconductor device substrate
11: base substrate
12: plastic-coated layer
13: semiconductor device
14: upper strata diaphragm
15: lower-layer overcoat film
100: chamber
100a: upper wall
100b: main body
200: substrate table
210: linear motor guide rail
220:Y axle transmission plate
230: substrate transfer plate
300: window
400: light source sensor
400a: light source sensor
400b: light source sensor
400c: light source sensor
410: light radiating portion
420: light receiving part
500: laser emission unit
600: display unit
700: inspection processing unit
Embodiment
Hereinafter, one exemplary embodiment will be described in detail referring to accompanying drawing.But the present invention according to many multi-form embodiments, and can should not be construed as limited to stated embodiment herein; But, provide these embodiments to make the present invention by thorough and complete, and will fully pass on concept of the present invention to those skilled in the art.In addition, the present invention is only by the scope definition of claim.In figure, identical reference numbers represents similar installation.
Hereinafter, device substrate refers to a kind of substrate, and wherein plastic-coated layer to be coated in base substrate and multiple device is deposited on plastic-coated layer.Described device can comprise semiconductor device etc.In the following description, semiconductor device substrate will be described to the example of device substrate; But the present invention can be applicable to the various device substrates except semiconductor device substrate.
Fig. 2 illustrates according to the layer separation equipment of one exemplary embodiment, wherein by bombardment with laser beams on semiconductor device substrate, and Fig. 3 illustrates the layer separation equipment according to one exemplary embodiment, and the layer wherein carrying out checking semiconductor device substrate by light source sensor is separated.
Chamber 100 has substrate table 200, and substrate table 200 is support semiconductor device substrate 10 in the inner space of chamber 100, and layer is separated, and by laser treatment, the semiconductor device substrate 10 be opposite on substrate table 200 performs.And chamber 100 comprises: main body 100b, its top is open; And upper wall 100a, its be the top covering described main body top cover and can open and close.Although not shown, chamber 100 has door on sidewall, and described door is through path, and wherein semiconductor device substrate 10 is delivered to inner space by described through path.
Chamber 100 wall 100a has the window 300 be made up of transparent material thereon and such as in a part of the upper wall 100a of chamber 100, has straight-through region, is used as window to make described straight-through region.Specifically, window keeps main body (not shown) to be arranged in the straight-through region on the upper wall of chamber 100, and keeps main body keep and support window 300 by window, and then is placed in by window 300 on the upper wall of chamber 100.Window 300 is made up of quartz etc., and therefore allow the laser beam vibrated from laser emission unit 500 to be propagated towards the semiconductor device substrate 10 substrate table 200 by window 300.And, multiple light source sensor 400 (400a, 400b, 400c) of relatively arranging with substrate table 200 are arranged in the bottom of upper wall 100a of chamber, and launch towards the semiconductor device substrate 10 be placed on substrate table 200, and the light received from the surface reflection of semiconductor device substrate 10, this will be described later.
Substrate table 200 as shown in Figure 4 has surface plate structure and therefore has substrate transfer plate 230, and wherein, semiconductor device substrate is placed in substrate transfer plate 230, can move to make substrate transfer plate 230 along linear motor (LM) guide member.In other words, Y-axis transmission plate 220 moves along LM guide rail 210 in the X-axis direction, and substrate transfer plate 230 moves along Y-axis transmission plate 220 in the Y-axis direction.Therefore, the semiconductor device substrate be placed on substrate transfer plate 230 is located in position, this is because described semiconductor device substrate can in X-axis and Y direction and by horizontally rotating movement during laser layer separation and inspection process.In this article, X-axis and Y-axis can comprise any axle of formation 2 dimensional plane.The definition of X-axis and Y-axis is equally applicable to following description.And horizontally rotate and mean, when the substrate support structure (not shown) being placed substrate is arranged in substrate transfer plate 230 in addition, the semiconductor device substrate be placed on substrate support structure can be rotated by the rotation of substrate support structure.
Simultaneously; semiconductor device substrate 10 is placed on the substrate transfer plate 230 of substrate table 200; wherein as illustrated in figure 5; semiconductor device substrate 10 in one exemplary embodiment refers to a kind of substrate; wherein plastic-coated layer 12 is arranged in base substrate 11, and multiple semiconductor device 13 to be deposited on plastic-coated layer 12 and to cover with diaphragm 14.And semiconductor device substrate 10 can be the substrate not having diaphragm 14.
Diaphragm 14 is placed to and contacts with the upper surface of substrate transfer plate 230, and base substrate 11 is positioned to from substrate transfer plate 230 farthest.Therefore, bombardment with laser beams is on the surface of base substrate 11.Similarly, light source sensor also can towards base substrate utilizing emitted light and receive light.
Above base substrate 11 can comprise glass substrate, ceramic substrate and metal-polysilicon or polymer substrate; But base substrate is not limited thereto, and the base substrate therefore under high underlayer temperature with the various kinds of thermal stability is applicable.In addition, because separated and remove, so need not be transparent in subsequent technique according to the base substrate of one exemplary embodiment, but, various and the material of cheapness can be used for substrate, as long as these materials at high temperature have thermal stability, and no matter its transparency is how.
Therefore, the plastic-coated layer 12 being coated to base substrate 11 can be made by having flexible flexible material, and can comprise and be selected from each any one following: PEN (PEN), PETG (PET), Merlon (PC), PPSU (PES), polyimides (PI), polyallyl compound (PAR), polycyclic olefin (PCO), polymethyl methacrylate (PMMA), cross-linking type epoxy resin and cross-linked type polyurethane film.In addition, the multiple semiconductor devices 13 be deposited on plastic-coated layer 12 can comprise by the OLED semiconductor device of low temperature polycrystalline silicon (LTPS) crystallization.
Laser emission unit 500 makes laser beam be entered in the inner space of chamber, so that by bombardment with laser beams on the surface of semiconductor device substrate 10 by window 300 vibration.Laser emission unit 500 also can be provided with speculum (not shown) and the laser beam launched from laser emission unit 500 from the reflection of described speculum and therefore towards the surface emissivity of semiconductor device substrate.The example of the lasing light emitter of laser emission unit 500 can comprise and is selected from each at least one following: gas laser, such as, and Ar laser, Kr laser and excimer laser; One or more dopants had in neodymium (Nd), ytterbium (Yb), chromium (Cr), titanium (Ti), holmium (Ho), erbium (Er), thulium (Tm) and tantalum (Ta) add the laser of the medium in the polycrystal (pottery) such as monocrystal or such as YAG, Y203, YV04, YA103 and GdV04 such as such as YAG, YV04, forsterite (Mg2SiO4), YA103 and GdV04 to; Amorphous laser; Ruby laser; Alexandrite laser; Ti: sapphire laser; Copper-vapor laser and golden vapor laser.Desirably laser beam can be the linear beam of the surperficial shaped light beam more easily convection light than the jointly whole surface of radiation substrate.
As illustrated in figure 5, be base substrate by the surface of laser beam radiation (contrary surface), and therefore when base substrate, plastic-coated layer, semiconductor device and diaphragm are sequentially stacking, bombardment with laser beams is on the basal surface of base substrate 11.Bombardment with laser beams causes the change at the interface between base substrate 11 and plastic-coated layer 12, and then by separated from one another to base substrate 11 and plastic-coated layer 12.Laser beam reduces the bonding strength at described interface, so by base substrate and plastic-coated layer separated from one another.
Meanwhile, be separated the whether success due to the laser beam be separated for layer in order to check between base substrate 11 with plastic-coated layer 12, substrate transfer plate 230 moves to allow semiconductor device substrate 10 to slide in the Y-axis direction below light source sensor 400.
Light source sensor 400 is arranged in the bottom of the upper wall of chamber to transmit and receive light.The example of light source sensor 400 can comprise RGB transducer and infrared ray sensor, and light source sensor be configured by RGB transducer time, described RGB sensor emission visible ray and receive from its reflection light.Light source sensor 400 is towards semiconductor device substrate utilizing emitted light and then receive the light of the surface reflection from semiconductor device substrate.In other words, the surface that the light launched arrives is the surface of base substrate, and therefore when base substrate, plastic-coated layer, semiconductor device and diaphragm are sequentially stacking, bombardment with laser beams is on the described surface of base substrate 11.Fig. 6 is the conceptual cross-sectional face figure that the light source sensor configured by RGB transducer is described.The light source sensor 400 configured by RGB transducer comprises light radiating portion 410 and light receiving part 420 and launches visible ray from light radiating portion 410, wherein launched Transmission light is through base substrate 11 or reflect from base substrate 11 completely, and a part for the light of institute's transmission is again passed through from the total reflection of plastic-coated layer 12 or refraction and is guided.Therefore, a part for the light launched is again from the surface reflection of base substrate 11.The light receiving part 420 of light source sensor 400 collects the light of the surface reflection from base substrate 11.In addition, multiple light source sensor can be set, and for example, embark on journey and three light source sensor are set, that is, the first light source sensor 400a, secondary light source transducer 400b and the 3rd light source sensor 400c, illustrated by Fig. 2 and Fig. 3.Therefore, can launch at multiple part places of base substrate simultaneously or receive light.
As a reference, Fig. 7 illustrates at the light will transmitted and received by light source sensor after on bombardment with laser beams to the surface of base substrate.Along with base substrate moves in the Y-axis direction in beneath window, laser beam can scan the whole surface of base substrate 11.
Bombardment with laser beams reduces the bonding strength at the interface between base substrate 11 and plastic-coated layer 12, thus causes plastic-coated layer 12 to be separated with base substrate 11.In order to whether completely inspected layer is separated success, transmit substrate transfer plate in the Y-axis direction to allow base substrate slowly movement in the Y-axis direction below light source sensor 400.By described three light source sensor 400a, 400b, 400c, the light from the point reflection of three surface of base substrate can be received.Therefore, when arranging three light source sensor, according to the movement of base substrate, scanning is performed to First Line I, the second line II and the 3rd the multiple of line III, and light transmitting and receiving can be realized.
Meanwhile, whether the interface that the light-receiving value received by light source sensor 400 can be depending between base substrate 11 with plastic-coated layer 12 is separated completely and changes.The RGB ratio that above light-receiving value refers to received light with as one of them in the light acceptance amount of the amount of received light.As a reference, the RGB ratio of the light received is used to compare with the RGB ratio of the light launched.That is, under the RGB ratio of launched light equals the situation of R: G: B=1: 1: 1, the RGB ratio using the RGB ratio of the light received to determine received light departs from how many with the RGB ratio of the light launched.The displacement of RGB ratio shows that whether interfacial separation is successful.
And, as the amount of received light light acceptance amount for by relative to light emission measure detect light acceptance amount check interfacial separation state.By using following characteristic to check interfacial separation: when the interface between base substrate and plastic-coated layer is attached completely, that is, under being in the attached state of 100%, light-receiving value is the highest, and start to cause attached state to be deteriorated along with interfacial separation, light-receiving value step-down.For example, when the interface supposing between base substrate and plastic-coated layer is attached completely, namely, under being in the attached state of 100%, the ratio of light-receiving value and light transmitted value is higher than 90%, interface portion between base substrate with plastic-coated layer be separated and the ratio of interface attached state be reduced to lower than 50% time, light-receiving value becomes and is reduced to lower than 70%.This is because the bonding strength of interface between base substrate and plastic-coated layer changes, light acceptance amount is so caused to change due to the different refractivity between interface.The part that is radiated the laser beam on the surface of base substrate is then received from surface reflection by total reflection; But, change its refractive index by the interface of a part between base substrate and plastic-coated layer of the laser beam of base substrate.When interface is attached completely, increased by the light quantity of total reflection towards the surface reflection at interface; But when interface portion or when being separated completely and reducing bonding strength, by plastic-coated layer and the quantitative change of the refract light be guided between interface must be greater than the light quantity of total reflection, this result reduces the amount of the light reflected.
Therefore, according to one exemplary embodiment, depend on by using light-receiving value whether interface is separated and whether the characteristic that changes is separated to check interface.For this reason, the conceptual block diagram illustrated according to the inspection of the layer separation equipment of one exemplary embodiment is described in fig. 8.
The light-receiving value measured by light source sensor 400 is delivered at the outer set display unit 600 of chamber 100 and is presented on display unit 600, can determine that whether interfacial separation is successful to make technological operation person.Display unit 600 by general display panel configurations, and alternatively can be configured by the extra display unit with input link as shown in Figure 9.
According to one exemplary embodiment, inspection processing unit 700 is set independently, it determines whether light-receiving value drops in reference range, and produce the successful alarm of interfacial separation when described light-receiving value drops in reference range, and produce the alarm of interfacial separation failure when described light-receiving value is outside reference range.For example, when the ratio of reference range and light transmitted value is 20% to 40% and the ratio of light-receiving value and light transmitted value is 32%, inspection processing unit 700 produces the successful alarm of interfacial separation.Comparatively speaking, when the ratio of light-receiving value and light transmitted value is 55%, therefore described ratio outside reference range, and checks processing unit 700 to produce the alarm of interfacial separation failure.Reference range is a scope, and in described scope, the interfacial separation between base substrate and plastic-coated layer is successfully completed.Reference range can be the scope of the ratio of light-receiving value and light transmitted value, but can be set to reception value scope or the RGB ratio ranges of light acceptance amount.Reference range can be determined according to the kind of base substrate, and especially desirably, the type according to plastic-coated layer determines reference range.
When light-receiving value is outside reference range, except producing the alarm of interfacial separation failure, inspection processing unit 700 also control substrate transfer plate 230 with again by bombardment with laser beams on semiconductor device substrate.In other words, when light-receiving value is outside reference range, base substrate is not separated completely.Therefore, substrate transfer plate is transmitted to be again radiated by laser beam on semiconductor device substrate to carry out complete separation in beneath window.
Meanwhile, aforementioned layers separation equipment is described by single treatment chamber of demonstrating, but also can be applicable to two treatment chamber.Figure 10 and 11 illustrates laser beam radiation in two treatment chamber and detects the situation of light-receiving value.Specifically, Figure 10 illustrates the situation according to one exemplary embodiment laser beam radiation in two treatment chamber, and Figure 11 illustrates according to one exemplary embodiment by using the light source sensor situation that inspected layer is separated in two treatment chamber.As a reference, omit in Figure 10 and Figure 11 above place and the substrate transfer plate therefore transmitting semiconductor device substrate for better understanding.
Illustrated by Figure 10, the first semiconductor device substrate 10a is delivered to laser beam treatment region B from the first spare area A in the X-axis direction, and then while Y-axis transmission, is being exposed to laser beam.In this situation, the second semiconductor device substrate 10b to be delivered to the second spare area C or from the second spare area C from outside by door and to pass out.
When completing illustrated by Figure 10 to the bombardment with laser beams on the first semiconductor device substrate 10a, as illustrated in fig, first semiconductor device substrate 10a turns back to the first spare area A, and transmits in the Y-axis direction below light source sensor 400, and then whether inspection interface is separated.Herein, the second semiconductor device substrate 10b being placed in the second spare area C is input to laser beam treatment region B along X-axis, and is exposed to laser beam while transmitting in the Y-axis direction.
According to one exemplary embodiment, base substrate can be checked whether to be separated with plastic-coated layer, and then improve the reliability of inspection.And, use light source sensor to replace the bore hole of operator to realize simple and easy and quick test.In addition, after laser beam radiation, perform inspection in identical chamber, this makes can the whole flow process of simplified manufacturing technique.
Although describe a layer separation equipment with reference to specific embodiment, layer separation equipment is not limited thereto.Therefore, those skilled in the art should be readily appreciated that when do not depart from defined by the appended claims the spirit and scope of the present invention can carry out various amendment and change to it.

Claims (11)

1. a layer separation equipment, is characterized in that comprising:
Chamber, has inner space and wall is provided with window thereon;
Laser emission unit, to be configured to bombardment with laser beams by described window on described inner space;
Light source sensor, is configured to towards the device substrate utilizing emitted light be arranged in described inner space and receives the described light from described device substrate reflection;
Display unit, is configured to show the light-receiving value measured from described light source sensor; And
Substrate transfer plate, is configured to support described device substrate in the described inner space of described chamber to transmit described device substrate to slide in described beneath window and to transmit described device substrate with in described light source sensor slid underneath after completing described bombardment with laser beams technique during bombardment with laser beams technique.
2. according to claim 1 layer of separation equipment, characterized by further comprising: inspection processing unit, be configured to determine whether described light-receiving value drops in reference range, and be configured to produce the successful alarm of interfacial separation when described light-receiving value drops in reference range, and produce the alarm of interfacial separation failure when described light-receiving value is outside reference range.
3. according to claim 2 layer of separation equipment, wherein when described light-receiving value is outside described reference range, described device substrate is again passed and uses described bombardment with laser beams.
4. according to claim 1 and 2 layer of separation equipment, wherein said device substrate comprises sequentially stacking base substrate, plastic-coated layer, semiconductor device and diaphragm, and is the surface of described base substrate by the surface of laser beam described in radiation.
5. according to claim 4 layer of separation equipment, wherein said plastic-coated layer is selected from each any one following: PEN, PETG, Merlon, PPSU, polyimides, polyallyl compound, polycyclic olefin, polymethyl methacrylate, cross-linking type epoxy resin and cross-linked type polyurethane film.
6. according to claim 4 layer of separation equipment, wherein said light-receiving value depends on the released state at the interface between described base substrate and described plastic-coated layer and changes.
7. according to claim 1 and 2 layer of separation equipment, wherein said light source sensor is RGB transducer.
8. according to claim 7 layer of separation equipment, wherein said light-receiving value is at least one in RGB ratio and light acceptance amount.
9. according to claim 1 and 2 layer of separation equipment, wherein when described device substrate comprises sequentially stacking base substrate, plastic-coated layer, semiconductor device and diaphragm, described reference range determines according to the type of described plastic-coated layer.
10. according to claim 1 and 2 layer of separation equipment, wherein said device is the active matrix organic light-emitting diode device obtained by low temperature polycrystalline silicon.
11. according to claim 1 layers of separation equipment, wherein said light source sensor is arranged in the bottom of the upper wall of described chamber.
CN201410427746.0A 2013-08-28 2014-08-27 Layer separation equipment Expired - Fee Related CN104425316B (en)

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