CN104349568A - Radio-frequency power supply for plasma vapor deposition - Google Patents
Radio-frequency power supply for plasma vapor deposition Download PDFInfo
- Publication number
- CN104349568A CN104349568A CN201310322775.6A CN201310322775A CN104349568A CN 104349568 A CN104349568 A CN 104349568A CN 201310322775 A CN201310322775 A CN 201310322775A CN 104349568 A CN104349568 A CN 104349568A
- Authority
- CN
- China
- Prior art keywords
- power supply
- frequency power
- radio
- gas phase
- plasma gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims description 41
- 238000001816 cooling Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000009466 transformation Effects 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 abstract 3
- 230000003321 amplification Effects 0.000 abstract 2
- 230000005284 excitation Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 230000001131 transforming effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 29
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XGWIJUOSCAQSSV-XHDPSFHLSA-N (S,S)-hexythiazox Chemical compound S([C@H]([C@@H]1C)C=2C=CC(Cl)=CC=2)C(=O)N1C(=O)NC1CCCCC1 XGWIJUOSCAQSSV-XHDPSFHLSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a radio-frequency power supply for plasma vapor deposition. The radio-frequency power supply comprises a transformer, an excitation unit, an amplification unit, an automatic matching unit and an output unit, wherein the transformer is used for transforming an alternating-current (AC) source voltage into an AC input voltage; the excitation unit is used for generating a sine-wave voltage by use of the AC input voltage; the amplification unit is used for amplifying the sine-wave voltage; the automatic matching unit is used for performing load impedance matching on the sine-wave voltage and comprises a matching capacitor and a matching capacitor transmission part, and a gear transmission component with a gear ratio of (1.5-2.5):15 is adopted as the matching capacitor transmission component; the output unit is used for outputting the sine-wave voltage to vapor deposition equipment. The radio-frequency power supply is reasonable in structure and high in matching precision and can be used for effectively improving the inter-chip uniformity.
Description
Technical field
The present invention relates to a kind of radio-frequency power supply, especially a kind of plasma gas phase deposition radio-frequency power supply.
Background technology
Existing radio-frequency power supply is by radio frequency power source, and impedance matching box and impedance power meter composition, be applied to radio frequency sputtering, PECVD plasma enhanced chemical vapor deposition, in the equipment such as reactive ion etching.
When existing radio-frequency power supply is used to PECVD vapour deposition, due to the defect of the electric capacity drive disk assembly of impedance matching box, make it match low precision, between the sheet of coated product, uniformity is undesirable.But the thickness due to produced plated film is all nano level, when using existing equipment to produce, its precision will affect the quality of rete, and meanwhile, differentiation during batch production is larger, can affect the qualification rate of product.To sum up, PECVD vapour deposition must configure the RF supply unit of high accuracy and high duplication.
For improving matching precision, existing impedance matching box must be modified.Radio-frequency (RF) match main purpose is the reflection loss that will reduce input signal.Radio frequency signal frequency is very high, it is compared with general radio wave, there is the character of more similar " visible ray ", namely it can produce reflection on the interface of two media, this reflection is similar to a little light from air, injects situation in water, if incidence angle is not to (namely impedance mismatch), a large amount of light can lose because of reflection, only has a small amount of light to incide in water.And the effect of adaptation namely reduces loss to greatest extent, ensure more signal access arrangement input, improve the service behaviour of equipment.
The effect of radio-frequency power supply to PECVD vapour deposition is mainly reflected in glow discharge phenomenon, the aspect such as deposition velocity and uniformity.Glow discharge phenomenon, the self-excitation electric conduction phenomena namely in low density gas, can produce low temperature plasma between pole plate; Deposition velocity, reflects the formation speed of coated product rete; Uniformity, embodies the thicknesses of layers difference of thicknesses of layers difference between coated product and single coated product different parts.
Summary of the invention
The object of the present invention is to provide a kind of plasma gas phase deposition radio-frequency power supply, it is rational in infrastructure, favorable working performance.
Another object of the present invention is to provide a kind of plasma gas phase deposition radio-frequency power supply, and its matching precision is high.
For reaching above object, the invention provides a kind of plasma gas phase deposition radio-frequency power supply, comprising
One transformer, for becoming an AC-input voltage by an alternating current source voltage transformation;
One excites unit, produces a sine voltage for utilizing described AC-input voltage;
One amplifying unit, for amplifying described sine voltage;
One automatic matching unit, for carrying out load impedance coupling to described sine voltage, comprising: a matching capacitance; And a matching capacitance drive disk assembly, wherein, described matching capacitance drive disk assembly adopts gear ratio to be (1.5 ~ 2.5): the gear transmission part of 15; And
One output unit, for exporting described sine voltage to a vapor deposition apparatus and producing glow discharge phenomenon.
The structure of above, the present invention can utilize glow discharge to make sample be warmed up to predetermined temperature, then passes into appropriate reacting gas, and gas, through series of chemical and plasma reaction, forms solid film at sample surfaces.
Therefore, the present invention has following advantage: produce plasma by glow discharge, and effectively make use of the response feature of nonequilibrium plasma, fundamentally change the Power supply mode of reaction system, make it have the feature accelerated deposition velocity and improve uniformity, and technological process is simple, simultaneously, it is rational in infrastructure, matches precision high, further increases uniformity between deposition velocity and sheet.
These objects of the present invention, feature, and advantage will embodiment below, accompanying drawing, and exposure detailed in claim.
Accompanying drawing explanation
Fig. 1 is front view of the present invention.
Fig. 2 is end view of the present invention.
Fig. 3 is basic original paper connection diagram of the present invention.
Embodiment
Refer to figure, the present invention is a kind of plasma gas phase deposition radio-frequency power supply, comprises
One transformer 5, for becoming an AC-input voltage by an alternating current source voltage transformation;
One excites unit 6, produces a sine voltage for utilizing described AC-input voltage;
One amplifying unit 7, for amplifying described sine voltage;
One automatic matching unit 8, for carrying out load impedance coupling to described sine voltage, comprising: a matching capacitance; And a matching capacitance drive disk assembly, wherein, described matching capacitance drive disk assembly adopts gear ratio to be (1.5 ~ 2.5): the gear transmission part of 15; And
One output unit 1, for exporting described sine voltage to a vapor deposition apparatus and producing glow discharge phenomenon.
The structure of above, plasma is produced by glow discharge, and effectively make use of the response feature of nonequilibrium plasma, fundamentally change the Power supply mode of reaction system, make it have the feature accelerated deposition velocity and improve uniformity, and technological process is simple, simultaneously, it is rational in infrastructure, matches precision high, further increases uniformity between deposition velocity and sheet.
Preferably, the gear ratio of described gear transmission part is 2:15.
The structure of above, compared with existing radio-frequency power supply, matching precision of the present invention is increased to 0.1% further, and reflection power is less than 1W simultaneously.
Preferably, described a kind of plasma gas phase deposition radio-frequency power supply, comprises a casing 2 further, for holding described transformer 5, described rectifier 6, described in excite unit 7, described amplifying unit 8, described automatic matching unit and described output unit 1.
The structure of above, the present invention is more attractive in appearance, and endurance to external impacts can be good.
Preferably, described a kind of plasma gas phase deposition radio-frequency power supply, comprises a protected location further; be arranged in described casing 2, for transshipping, short circuit; electric leakage, stops described plasma gas phase deposition radio-frequency power supply to work on when overheated and standing wave produces.
The structure of above, radio-frequency power supply of the present invention effectively can prevent overload, short circuit, electric leakage, the infringement that overheated and standing wave comes power supply itself and other equipment belt.
Preferably, described a kind of plasma gas phase deposition radio-frequency power supply, comprises a control space of a whole page 3 further, is arranged at a front of described casing 2, for adjusting a power output and manually carrying out described load impedance coupling.
The structure of above, user in conjunction with actual service condition, can adjust power output, and meanwhile, user can also carry out the operations such as manual fine-tuning to described load impedance coupling.
Preferably, described a kind of plasma gas phase deposition radio-frequency power supply, comprises a feedback unit further, is arranged in described casing 2, for gathering radio-frequency power supply running parameter.
The structure of above, described plasma gas phase deposition radio-frequency power supply can gather self running parameter.
Preferably, described a kind of plasma gas phase deposition radio-frequency power supply, comprises a display unit 4 further, is arranged at the described front of described casing 2, for showing described radio-frequency power supply running parameter.
Wherein, described display unit 4 comprises a rectifier further, for the direct voltage that swaps out from described AC-input voltage transfer; One LED display, by described DC-voltage supply, for showing described radio-frequency power supply running parameter; And a back light, for illuminating described LED display under dark surrounds.
The structure of above, user in conjunction with shown voltage parameter, can manage described plasma gas phase deposition radio-frequency power supply; And employ described LED display, therefore low in energy consumption, display life is long, employs described back light simultaneously, makes user can see displaying contents clearly under dark surrounds.
Preferably, described a kind of plasma gas phase deposition radio-frequency power supply, comprises a cooling device further, is arranged in described casing 2, for lowering the temperature to described plasma gas phase deposition radio-frequency power supply.
Wherein, described cooling device can be fan, fin, liquid cooling apparatus or mixed type cooling device.
The structure of above, described plasma gas phase deposition radio-frequency power supply is not easily overheated in use, can extend its service time and life-span.
Content of the test and method:
Choose CESAR 1312 type power supply and plasma gas phase deposition radio-frequency power supply provided by the present invention.
Be respectively installed in PECVD device, run and total time lower than 100 hours, test comparison must not be carried out to power output, reflection power and matching precision.
By product printing opacity method of testing, test comparison is carried out to inhomogeneities between sheet.
Above-mentioned test result is depicted as following form.
Table 1: performance comparison
As can be seen from Table 1, when power output is identical, the reflection power of plasma gas phase deposition radio-frequency power supply of the present invention is less, and matching precision is higher, and this illustrates impedance matching better effects if of the present invention.
Table 2: printing opacity test data contrasts
As can be seen from Table 2, when PECVD establishing is identical, the product using plasma gas phase deposition radio-frequency power supply provided by the present invention to produce has uniformity between better sheet, and with the obvious advantage.
By above-described embodiment, object of the present invention is reached by fully effective.The personage being familiar with this skill should be understood that and the present invention includes but the content being not limited to accompanying drawing and describing in embodiment above.Any amendment not departing from function and structure principle of the present invention all will comprise within the scope of the appended claims.
Claims (10)
1. a plasma gas phase deposition radio-frequency power supply, comprising:
One transformer, for becoming an AC-input voltage by an alternating current source voltage transformation;
One excites unit, produces a sine voltage for utilizing described AC-input voltage;
One amplifying unit, for amplifying described sine voltage;
One automatic matching unit, for carrying out load impedance coupling to described sine voltage, comprising: a matching capacitance; And a matching capacitance drive disk assembly, wherein, described matching capacitance drive disk assembly adopts gear ratio to be (1.5 ~ 2.5): the gear transmission part of 15; And
One output unit, for exporting described sine voltage to a vapor deposition apparatus and producing glow discharge phenomenon.
2. a kind of plasma gas phase deposition radio-frequency power supply according to claim 1, wherein, the gear ratio of described gear transmission part is 2:15.
3. a kind of plasma gas phase deposition radio-frequency power supply according to claim 1, comprises a casing further, for holding described transformer, described rectifier, described in excite unit, described amplifying unit, described automatic matching unit and described output unit.
4. a kind of plasma gas phase deposition radio-frequency power supply according to claim 1, comprises a protected location further, is arranged in described casing; for transshipping; short circuit, electric leakage, stops described plasma gas phase deposition radio-frequency power supply to work on when overheated and standing wave produces.
5. a kind of plasma gas phase deposition radio-frequency power supply according to claim 1, comprises a control panel further, is arranged at a front of described casing, for adjusting a power output and manually carrying out described load impedance coupling.
6. a kind of plasma gas phase deposition radio-frequency power supply according to claim 1, comprises a feedback unit further, is arranged in described casing, for gathering radio-frequency power supply running parameter.
7. a kind of plasma gas phase deposition radio-frequency power supply according to claim 1, comprises a display unit further, is arranged at the described front of described casing, for showing described radio-frequency power supply running parameter.
8. a kind of plasma gas phase deposition radio-frequency power supply according to claim 7, wherein, described display unit comprises a rectifier further, for the direct voltage that swaps out from described AC-input voltage transfer; One LED display, by described DC-voltage supply, for showing described radio-frequency power supply running parameter; And a back light, for illuminating described LED display under dark surrounds.
9. a kind of plasma gas phase deposition radio-frequency power supply according to claim 1, comprises a cooling device further, is arranged in described casing, for lowering the temperature to described plasma gas phase deposition radio-frequency power supply.
10. a kind of plasma gas phase deposition radio-frequency power supply according to claim 9, wherein, described cooling device comprises a fan and a fin further.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310322775.6A CN104349568A (en) | 2013-07-30 | 2013-07-30 | Radio-frequency power supply for plasma vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310322775.6A CN104349568A (en) | 2013-07-30 | 2013-07-30 | Radio-frequency power supply for plasma vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104349568A true CN104349568A (en) | 2015-02-11 |
Family
ID=52504079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310322775.6A Pending CN104349568A (en) | 2013-07-30 | 2013-07-30 | Radio-frequency power supply for plasma vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104349568A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558718A (en) * | 1994-04-08 | 1996-09-24 | The Regents, University Of California | Pulsed source ion implantation apparatus and method |
| CN101640369A (en) * | 2009-08-25 | 2010-02-03 | 深圳市大族激光科技股份有限公司 | Radio-frequency (RF) power supply device |
| CN201750341U (en) * | 2010-02-09 | 2011-02-16 | 深圳市贵鸿达电子有限公司 | Radio frequency power supply with adjustable output voltage |
| US20110069518A1 (en) * | 2009-09-23 | 2011-03-24 | Taewoong Medical Co., Ltd. | Resonant inverter of radio frequency generator for radiofrequency ablation |
| CN201892695U (en) * | 2010-12-08 | 2011-07-06 | 荣信电力电子股份有限公司 | Multifunctional signal generator |
| CN102355025A (en) * | 2011-09-30 | 2012-02-15 | 大连罗宾森电源设备有限公司 | Direct-current charging system |
| CN202178494U (en) * | 2011-07-26 | 2012-03-28 | 华中科技大学 | Radio frequency power supply for CO2 laser |
| CN202721890U (en) * | 2009-02-13 | 2013-02-06 | 许廷格电子两合公司 | Module of plasma feeding device and plasma feeding device |
| CN103025041A (en) * | 2011-09-28 | 2013-04-03 | 中国科学院微电子研究所 | Radio frequency impedance matcher |
| CN203089967U (en) * | 2012-12-31 | 2013-07-31 | 云南航天工业有限公司 | Atmospheric dielectric barrier discharge plasma sterilization device |
| CN203340398U (en) * | 2013-07-30 | 2013-12-11 | 沙嫣 | Radio-frequency power supply for plasma vapor deposition |
-
2013
- 2013-07-30 CN CN201310322775.6A patent/CN104349568A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558718A (en) * | 1994-04-08 | 1996-09-24 | The Regents, University Of California | Pulsed source ion implantation apparatus and method |
| CN202721890U (en) * | 2009-02-13 | 2013-02-06 | 许廷格电子两合公司 | Module of plasma feeding device and plasma feeding device |
| CN101640369A (en) * | 2009-08-25 | 2010-02-03 | 深圳市大族激光科技股份有限公司 | Radio-frequency (RF) power supply device |
| US20110069518A1 (en) * | 2009-09-23 | 2011-03-24 | Taewoong Medical Co., Ltd. | Resonant inverter of radio frequency generator for radiofrequency ablation |
| CN201750341U (en) * | 2010-02-09 | 2011-02-16 | 深圳市贵鸿达电子有限公司 | Radio frequency power supply with adjustable output voltage |
| CN201892695U (en) * | 2010-12-08 | 2011-07-06 | 荣信电力电子股份有限公司 | Multifunctional signal generator |
| CN202178494U (en) * | 2011-07-26 | 2012-03-28 | 华中科技大学 | Radio frequency power supply for CO2 laser |
| CN103025041A (en) * | 2011-09-28 | 2013-04-03 | 中国科学院微电子研究所 | Radio frequency impedance matcher |
| CN102355025A (en) * | 2011-09-30 | 2012-02-15 | 大连罗宾森电源设备有限公司 | Direct-current charging system |
| CN203089967U (en) * | 2012-12-31 | 2013-07-31 | 云南航天工业有限公司 | Atmospheric dielectric barrier discharge plasma sterilization device |
| CN203340398U (en) * | 2013-07-30 | 2013-12-11 | 沙嫣 | Radio-frequency power supply for plasma vapor deposition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Elphick et al. | Laboratory investigation of the input current characteristics of modern domestic appliances for varying supply voltage conditions | |
| Meyer et al. | Harmonic summation effects of modern lamp technologies and small electronic household equipment | |
| CN104515589B (en) | Method and system for testing air conditioner electric device | |
| CN203340398U (en) | Radio-frequency power supply for plasma vapor deposition | |
| McLorn et al. | Load and harmonic distortion characterization of modern low-energy lighting under applied voltage variation | |
| Sahu et al. | Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition | |
| Tribelsky et al. | Dynamics of destructive Fano resonances | |
| CN104349568A (en) | Radio-frequency power supply for plasma vapor deposition | |
| Kovtun et al. | Comparative analysis of the plasma parameters of ECR and combined ECR+ RF discharges in the TOMAS plasma facility | |
| Piskin et al. | E–H transitions in Ar/O2 and Ar/Cl2 inductively coupled plasmas: Antenna geometry and operating conditions | |
| Mageed et al. | Effects of waveforms distortion for household appliances on power quality | |
| Fischer et al. | Excitation of Ar, O2, and SF6/O2 plasma discharges using tailored voltage waveforms: control of surface ion bombardment energy and determination of the dominant electron excitation mode | |
| CN201369319Y (en) | Multi-channel real-time film thickness monitor | |
| CN101720161B (en) | Plasma illuminating lamp control device | |
| CN104483570B (en) | A kind of Distribution Network Harmonics improvement method for loss reduction effect reality testing | |
| Nazirov et al. | Measurement of emissions of high harmonic currents in modern electrical receivers in municipal-households power supply system | |
| CN106711282B (en) | A kind of film refractive index acquisition methods and device | |
| Xiang et al. | Simulation and experiments for the Qext of a cavity beam position monitor | |
| Zhang et al. | First-principles study of the dielectric properties and infrared reflectance spectrum of Y2O3 | |
| Hasan et al. | Experimental analysis of harmonic and power factor for various lighting loads | |
| Kubinec et al. | A dielectric study of the domain freezing in KH2AsO4 | |
| Safargholi | Harmonic Fingerprint Measurement for Characterization of LED Street Lighting | |
| CN207636746U (en) | A kind of test device of high frequency generator of electrodeless lamp | |
| Lazović et al. | Plasma properties in a large-volume, cylindrical and asymmetric radio-frequency capacitively coupled industrial-prototype reactor | |
| CN104993045A (en) | Piezoelectric transformer based on single crystal surface cutting mode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170111 Address after: 226400 Jiangsu Nantong Economic Development Zone, Rudong Jialing River Road on the north side Applicant after: Nantong Johnson Photoelectric Technology Co., Ltd. Address before: 200050 Shanghai city Changning District East Ronghua Road No. 128 room 1704 Applicant before: Sha Yan Applicant before: Sha Xiaolin |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150211 |