CN104347752A - Method for preparing copper indium gallium selenide (CIGS) absorption layer film - Google Patents
Method for preparing copper indium gallium selenide (CIGS) absorption layer film Download PDFInfo
- Publication number
- CN104347752A CN104347752A CN201310332299.6A CN201310332299A CN104347752A CN 104347752 A CN104347752 A CN 104347752A CN 201310332299 A CN201310332299 A CN 201310332299A CN 104347752 A CN104347752 A CN 104347752A
- Authority
- CN
- China
- Prior art keywords
- absorbed layer
- layer film
- band gap
- selenizing
- copper indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000010521 absorption reaction Methods 0.000 title abstract 9
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 67
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 27
- 229910052733 gallium Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 235000015067 sauces Nutrition 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000002745 absorbent Effects 0.000 claims description 4
- 239000002250 absorbent Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000000280 densification Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 238000001125 extrusion Methods 0.000 claims description 4
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 claims description 3
- 239000008199 coating composition Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000010924 continuous production Methods 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 71
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- BKUKXOMYGPYFJJ-UHFFFAOYSA-N 2-ethylsulfanyl-1h-benzimidazole;hydrobromide Chemical compound Br.C1=CC=C2NC(SCC)=NC2=C1 BKUKXOMYGPYFJJ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for preparing a copper indium gallium selenide (CIGS) absorption layer film. First of all, an absorption layer film is prepared by use of an electroplating method, then an absorption layer film with a wider band gap is prepared on the previous absorption layer film by use of a coating method, and after selenide heat processing, an absorption layer structure with a gradient band gap is formed. According to the absorption layer preparation method provided by the invention, the copper indium gallium selenide absorption layer film is prepared completely by use of a non-vacuum method, the band gap distribution of a CIGS absorption layer can be controlled, and the method is suitable for continuous production.
Description
Technical field
The invention belongs to film photovoltaic technical field, be specifically related to a kind of technique preparing copper indium gallium selenium solar cell absorbed layer.
Background technology
Copper Indium Gallium Selenide (CIGSe) serial solar cell is considered to the second generation solar cell that can replace crystal silicon battery, be one of thin-film solar cells that photoelectric conversion efficiency is the highest, there is the advantages such as low light level effect is good, cost is low, the life-span is long, good stability, capability of resistance to radiation strong, can be made into flexible photovoltaic building materials, anti-hot spot effect is good.Copper Indium Gallium Selenide (CIGSe) range of absorbent layer comprises the compound semiconductor films such as copper indium diselenide (CISe), copper indium gallium (CIG), Copper Indium Gallium Selenide (CIGSe), Cu-In-Al-Se (CIASe), copper indium sulphur (CIS).
At present, the preparation of absorbed layer material mainly contains coevaporation method and preformed layer selenizing method.CIGSe system solar battery efficiency prepared by coevaporation method is high, and three step evaporations can prepare the absorbent layer structure of gradient band gap, and laboratory small size photoelectric conversion efficiency can, more than 20%, be most effective in thin-film solar cells.But being used alone evaporation, to prepare absorbed layer equipment requirement high, technology difficulty is large, should not prepare the absorbed layer of Large-Area-Uniform, and is difficult under high temperature evaporation, copper, indium, gallium, selenium four vapour pressures be differed to very large simple substance source and carry out independence accurately control.
First adopt magnetron sputtering or galvanoplastic to prepare forerunner's alloy film, then selenization is the technique of a lot of enterprises employing at present, but rear selenizing cannot obtain rational bandgap structure.Magnetron sputtering method easily produces indium group in the process of high power sputtering indium, affect absorbed layer surface topography, and the various alloys target costs of manufacture such as copper indium (CI), copper gallium (CG), copper indium gallium (CIG), Copper Indium Gallium Selenide (CIGSe) are higher, increase cost; The diffusion coefficient of indium, gallium is little, and sputtering individual layer indium, gallium are difficult to obtain good distribution at rear selenidation process, and intermittent sputtering, the sputtering of many targets, multilayer sputtering add technology difficulty and cost, require high to vacuum equipment.
The current printing rubbing method generally adopted, absorbed layer and back electrode poor adhesive force, need to add solid, interfacial agent and solvent in containing the sauce of Copper Indium Gallium Selenide, add oxygen and carbon content in absorbed layer, reduce further absorbed layer quality.
Research finds, introduces gradient band gap, effectively can improve the electricity conversion of solar cell in Copper Indium Gallium Selenide (CIGSe) light absorbing zone.This is because photo-generated carrier is expelled high recombination region by the electrical potential difference that gradient band gap produces, thus improve short circuit current.
Therefore, need a kind of technique can use antivacuum equipment prerequisite under, overcome selenizing method after adopting and cannot prepare the problem of the absorbed layer film with gradient band gap structure, and overcome the problem adopting conventional printing rubbing method absorbed layer and back electrode poor adhesive force, high-quality absorbed layer cannot be prepared.
Summary of the invention
The object of the invention is to use antivacuum equipment making to have the method for Copper Indium Gallium Selenide (CIGSe) the absorbed layer film of gradient band gap structure.The method uses electroplating device and other coating apparatus, just can make according to real needs and have the absorbed layer of reasonable band gap, also solve that rear selenizing method cannot prepare gradient band gap absorbed layer, conventional printing rubbing method cannot prepare the inherent defect of high-quality absorbed layer.
The solution of the present invention comprises following processing step: the first step, and the substrate comprising substrate adopts electro-plating method prepare one deck narrow band gap absorbed layer film, the energy gap of described narrow band gap absorbed layer film is less than 1.5ev, and thickness is less than 2000nm; Second step, on the film that the first step generates, adopt rubbing method to prepare one deck broad-band gap absorbed layer film, the energy gap of the absorbed layer film of described broad-band gap is greater than the energy gap of described narrow band gap absorbed layer film, and thickness is 50 ~ 1000nm; 3rd step, forms the absorbent layer structure of gradient band gap by selenizing heat treatment; Described selenizing heat treatment, the selenizing heat treatment directly carried out in selenizing stove after referring to the preformed layer electroplating narrow band gap absorbed layer film in step one, or the selenization carried out in selenizing stove after step 2 terminates.In electroplating process, the order of copper, indium, gallium, selenium can flexible transformation as required.
In the first step, the method preparing narrow band gap absorbed layer film is on the substrate comprising substrate, adopt electro-plating method to prepare one deck Copper Indium Gallium Selenide (CIGSe), Cu-In-Al-Se (CIASe), copper indium diselenide (CISe) or Cu-In-Ga-Se-S (CIGSeS) absorbed layer film.In second step, the method preparing broad-band gap absorbed layer film adopts rubbing method to prepare the wider copper indium gallium (CIGSe) of one deck band gap, Cu-In-Al-Se (CIASe), copper indium gallium (CIG), copper indium sulphur (CIS) or Cu-In-Ga-Se-S (CIGSeS) film on the absorbing membrane that the first step generates.Formed the absorbed layer with gradient band gap structure by selenizing heat treatment in 3rd step.Described gradient band gap structure, refers to the bandgap structure increased gradually to absorbed layer direction from hearth electrode.
In described narrow band gap absorbed layer film, after selenizing, obtain percentage composition 0≤Ga/ (Ga+In) <0.4 of gallium (Ga) atom; In described broad-band gap absorbed layer film, after selenizing, obtain percentage composition 0<Ga/ (Ga+In) <0.6 of gallium (Ga) atom; And the percentage composition of gallium (Ga) atom in described broad-band gap absorbed layer film is greater than the percentage composition of gallium (Ga) atom in narrow band gap absorbed layer film.
In second step, use the preformed layer of print process preparation containing Copper Indium Gallium Selenide (CIGSe) sauce, thickness 50 ~ 1000nm; After drying, roll extrusion makes it densification; Selenizing heat treatment, obtains broad-band gap absorbed layer film, and in this film, the percentage composition of gallium (Ga) atom is greater than described narrow band gap absorbed layer film, and the energy gap of broad-band gap absorbed layer film is greater than narrow band gap absorbed layer film.
Absorbed layer film described in step one, refers to that band gap is less than 1.5ev, and the atom content of gallium (Ga) is the absorbed layer film of 0≤Ga/ (Ga+In) <0.3;
Absorbed layer film described in step one is thickness is the absorbed layer film of 1000nm ~ 2000nm.
The substrate comprising substrate described in step one, can be comprise various substrate, various hearth electrode, various barrier layer, various insulating barrier, various reflector, various passivation layer and various resilient coating composition substrate.
Rubbing method described in step 2, is direct coating, or is coated with under vacuum, nitrogen, ar gas environment, and the coating process of indication comprises spin-coating method, scraper for coating method, slot coated method, print process, roll coating process, slow czochralski method, ultrasonic waves rubbing method etc. here; Described thin film, refers to energy gap larger than ground floor film, and the content of gallium (Ga) atom is: 0≤Ga/ (Ga+In) <0.6.
The coating process of preparation CIGS thin-film provided by the present invention, tool has the following advantages: the coating apparatus that 1, use cost is very low, and the method for selenizing after preformed layer, also can prepare the absorbed layer with gradient band gap; 2, the problem of poor adhesive force between the absorbed layer using common printing rubbing method to produce and back electrode can be solved; 3, the printing rubbing method that employing is common separately can be solved, because coating layer is blocked up, the problem of high-quality absorbed layer cannot be prepared; 4, the more difficult problem preparing gradient band gap absorbed layer of employing preformed layer selenizing method separately can be solved.
Embodiment
Introduce embodiments of the invention below, but the present invention is only limitted to embodiment absolutely not.Flesh and blood of the present invention is: first use galvanoplastic to prepare one deck absorbed layer film, re-use rubbing method and prepare the wider absorbed layer film of one deck band gap, thus reach the object controlling band gap reasonable change.Do not depart from the behavior of essence of the present invention, all within protection scope of the present invention.
Embodiment 1: electro-coppering indium selenium preformed layer on the substrate comprising substrate; In selenizing stove, carry out selenizing heat treatment, obtain ground floor narrow band gap absorbed layer.Obtain percentage composition 0≤Ga/ (Ga+In) <0.4 of gallium (Ga) atom after selenizing, the energy gap of absorbed layer is less than 1.5ev, and thickness is less than 2000nm; Use the preformed layer of print process preparation containing Copper Indium Gallium Selenide (CIGSe) sauce, thickness 500nm; After drying, roll extrusion makes it densification; Second layer absorbed layer is formed, selenizing temperature 450 by selenizing heat treatment
oc ~ 850
oc, wherein the percentage composition of gallium (Ga) atom is greater than the first absorbed layer, and be 0<Ga/ (Ga+In) <0.6, energy gap is greater than the first absorbed layer,
Embodiment 2: electro-coppering indium selenium preformed layer on the substrate comprising substrate; In selenizing stove, carry out selenizing heat treatment, obtain ground floor narrow band gap absorbed layer, the energy gap of absorbed layer is less than 1.1ev, and thickness is less than 1500nm; Use the preformed layer of spread coating preparation containing Copper Indium Gallium Selenide (CIGSe) sauce, thickness 500nm; After drying, roll extrusion makes it densification; By selenizing heat treatment, obtain the absorbed layer with gradient band gap, wherein the percentage composition of gallium (Ga) atom is greater than the first absorbed layer, and be 0≤Ga/ (Ga+In) <0.6, energy gap is greater than the first absorbed layer.
Claims (10)
1. prepare a method for CuInGaSe absorbed layer film, the first step, the substrate comprising substrate adopts electro-plating method prepare one deck narrow band gap absorbed layer film, the energy gap of described narrow band gap absorbed layer film is less than 1.5ev, and thickness is less than 2000nm; Second step, on the film that the first step generates, adopt rubbing method to prepare one deck broad-band gap absorbed layer film, the energy gap of the absorbed layer film of described broad-band gap is greater than the energy gap of described narrow band gap absorbed layer film, and thickness is 50 ~ 1000nm; 3rd step, forms the absorbent layer structure of gradient band gap by selenizing heat treatment; Described selenizing heat treatment, the selenizing heat treatment directly carried out in selenizing stove after referring to the preformed layer electroplating narrow band gap absorbed layer film in step one, selenizing temperature 450
oc ~ 850
oc, or the selenization carried out in selenizing stove after step 2 terminates, selenizing temperature 450
oc ~ 850
oc.
2. the method preparing CuInGaSe absorbed layer film according to claim 1, it is characterized in that: in the first step, the method preparing narrow band gap absorbed layer film is on the substrate comprising substrate, adopt electro-plating method to prepare one deck Copper Indium Gallium Selenide, Cu-In-Al-Se, copper indium diselenide or Cu-In-Ga-Se-S absorbed layer film.
3. the method preparing CuInGaSe absorbed layer film according to claim 1, it is characterized in that: in second step, the method preparing broad-band gap absorbed layer film adopts rubbing method to prepare the wider copper indium gallium of one deck band gap, Cu-In-Al-Se, copper indium gallium, copper indium sulphur or Cu-In-Ga-Se-S thin film on the absorbing membrane that the first step generates.
4. the method preparing CuInGaSe absorbed layer film according to claim 1, is characterized in that: formed the absorbed layer with gradient band gap structure in the 3rd step by selenizing heat treatment.
5. the method preparing CuInGaSe absorbed layer film according to claim 1, is characterized in that: in described narrow band gap absorbed layer film, obtains percentage composition 0≤Ga/ (Ga+In) <0.4 of gallium atom after selenizing; In described broad-band gap absorbed layer film, after selenizing, obtain percentage composition 0<Ga/ (Ga+In) <0.6 of gallium atom; And the percentage composition of the gallium atom in described broad-band gap absorbed layer film is greater than the percentage composition of the gallium atom in narrow band gap absorbed layer film.
6. the method preparing CuInGaSe absorbed layer film according to claim 1, is characterized in that: in second step, and use the preformed layer of print process preparation containing Copper Indium Gallium Selenide sauce, thickness is 50 ~ 1000nm; After drying, roll extrusion makes it densification; The high temperature anneal, obtains broad-band gap absorbed layer film, and in this film, the percentage composition of gallium atom is greater than described narrow band gap absorbed layer film, and the energy gap of broad-band gap absorbed layer film is greater than narrow band gap absorbed layer film.
7. the method preparing CuInGaSe absorbed layer film according to claim 1, it is characterized in that: the absorbed layer film described in step one, refer to that band gap is less than 1.5ev, the atom content of gallium (Ga) is the absorbed layer film of 0≤Ga/ (Ga+In) <0.3.
8. the method preparing CuInGaSe absorbed layer film according to claim 1, is characterized in that: the absorbed layer film described in step one, the absorbed layer film of to be thickness be 1000nm ~ 2000nm.
9. the method preparing CuInGaSe absorbed layer film according to claim 1, it is characterized in that: the substrate comprising substrate described in step one, can be comprise various substrate, various hearth electrode, various barrier layer, various insulating barrier, various reflector, various passivation layer and various resilient coating composition substrate.
10. the method preparing CuInGaSe absorbed layer film according to claim 1, it is characterized in that: the rubbing method described in step 2, it is direct coating, or be coated with under vacuum, nitrogen, ar gas environment, the coating process of indication comprises spin-coating method, scraper for coating method, slot coated method, print process, roll coating process, slow czochralski method, ultrasonic waves rubbing method etc. here; Described thin film, refers to energy gap larger than ground floor film, and the content of gallium (Ga) atom is: 0≤Ga/ (Ga+In) <0.6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310332299.6A CN104347752A (en) | 2013-08-02 | 2013-08-02 | Method for preparing copper indium gallium selenide (CIGS) absorption layer film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310332299.6A CN104347752A (en) | 2013-08-02 | 2013-08-02 | Method for preparing copper indium gallium selenide (CIGS) absorption layer film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104347752A true CN104347752A (en) | 2015-02-11 |
Family
ID=52502934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310332299.6A Pending CN104347752A (en) | 2013-08-02 | 2013-08-02 | Method for preparing copper indium gallium selenide (CIGS) absorption layer film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104347752A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633212A (en) * | 2015-12-29 | 2016-06-01 | 中国电子科技集团公司第十八研究所 | Method and device for preparing gradient band gap light absorption layer based on one-step co-evaporation technology |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820032A (en) * | 2010-02-11 | 2010-09-01 | 昆山正富机械工业有限公司 | Method for manufacturing light absorption layer by collocating CuInGaSe slurry under non-vacuum environment |
| US20110146790A1 (en) * | 2009-12-17 | 2011-06-23 | Precursor Energetics, Inc. | Molecular precursor methods for optoelectronics |
| CN202167501U (en) * | 2011-05-09 | 2012-03-14 | 东莞日阵薄膜光伏技术有限公司 | Copper indium gallium selenium solar battery |
| CN102983222A (en) * | 2012-12-06 | 2013-03-20 | 许昌天地和光能源有限公司 | Preparation method for absorption layer with gradient band gap distribution |
-
2013
- 2013-08-02 CN CN201310332299.6A patent/CN104347752A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110146790A1 (en) * | 2009-12-17 | 2011-06-23 | Precursor Energetics, Inc. | Molecular precursor methods for optoelectronics |
| CN101820032A (en) * | 2010-02-11 | 2010-09-01 | 昆山正富机械工业有限公司 | Method for manufacturing light absorption layer by collocating CuInGaSe slurry under non-vacuum environment |
| CN202167501U (en) * | 2011-05-09 | 2012-03-14 | 东莞日阵薄膜光伏技术有限公司 | Copper indium gallium selenium solar battery |
| CN102983222A (en) * | 2012-12-06 | 2013-03-20 | 许昌天地和光能源有限公司 | Preparation method for absorption layer with gradient band gap distribution |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633212A (en) * | 2015-12-29 | 2016-06-01 | 中国电子科技集团公司第十八研究所 | Method and device for preparing gradient band gap light absorption layer based on one-step co-evaporation technology |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101728461B (en) | Method for preparing absorbing layer of thin film solar cell | |
| KR101035389B1 (en) | Bulk heterojunction solar cell and Method of manufacturing the same | |
| CN102983222A (en) | Preparation method for absorption layer with gradient band gap distribution | |
| JP2008078619A (en) | Method and device for manufacturing semiconductor thin film, method for manufacturing photoelectric conversion device and photoelectric conversion device | |
| CN102254998B (en) | Cadmium-free CuInGaSe thin film solar cell assembly and preparing method of zinc sulfide buffer layer thin film thereof | |
| CN106917068A (en) | Solar battery obsorbing layer Sb is prepared based on magnetron sputtering and rear selenizing2Se3The method of film | |
| CN102956752A (en) | Preparation method of flexible copper indium gallium selenium thin film solar battery | |
| CN102154622A (en) | Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell | |
| KR20120051206A (en) | Method of making the photovoltaic cigs absorber | |
| CN105336800A (en) | Preparation method of light absorption layer of CIGS-base thin film solar cell | |
| CN101944556A (en) | Preparation method of high-uniformity copper-indium-gallium-selenium (CIGS) absorbed layer | |
| WO2013185506A1 (en) | Method for preparing copper indium gallium diselenide thin-film solar cell | |
| CN102437237A (en) | Chalcopyrite type thin-film solar cell and manufacturing method thereof | |
| CN103985783B (en) | Utilize the method that magnetron sputtering method prepares copper-zinc-tin-sulfur film on flexible substrates | |
| CN106409934A (en) | Preparation method of CIGS solar cell absorption layer | |
| CN106298989A (en) | A kind of method improving back electrode of thin film solar cell and absorbed layer adhesive force | |
| CN104347752A (en) | Method for preparing copper indium gallium selenide (CIGS) absorption layer film | |
| CN105895735A (en) | Method for preparing CZTS (copper zinc tin sulfide) thin-film solar cell through zinc oxide target sputtering | |
| KR20120087042A (en) | Solar cell apparatus and method of fabricating the same | |
| CN102024858B (en) | Ink, thin film solar cell and manufacturing methods thereof | |
| KR101504343B1 (en) | Manufacturing method of compound semiconductor solar cell | |
| CN103474514B (en) | The preparation method of copper indium gallium selenium solar cell | |
| CN106252464B (en) | A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power | |
| CN105810764B (en) | A kind of preparation method of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer | |
| CN105932093B (en) | A kind of preparation method of high quality CIGS thin film solar battery obsorbing layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150211 |