CN104078399B - Reaction chamber and method for SiConi etchings - Google Patents
Reaction chamber and method for SiConi etchings Download PDFInfo
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- CN104078399B CN104078399B CN201410357214.4A CN201410357214A CN104078399B CN 104078399 B CN104078399 B CN 104078399B CN 201410357214 A CN201410357214 A CN 201410357214A CN 104078399 B CN104078399 B CN 104078399B
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- 238000005530 etching Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000007789 gas Substances 0.000 claims abstract description 48
- 239000006227 byproduct Substances 0.000 claims abstract description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052786 argon Inorganic materials 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 139
- 230000005540 biological transmission Effects 0.000 claims description 20
- 239000007787 solid Substances 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 239000003039 volatile agent Substances 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 150000008282 halocarbons Chemical class 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003380 propellant Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical group FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a kind of reaction chamber and method for SiConi etchings, belong to semiconductor technology manufacturing field, by setting multiple wafer susceptors in reaction chamber, low temperature pedestal replaces with high temperature pedestal to form a circle, swivel mount, which rotates wafer to adjacent wafer susceptor along same direction, to be performed etching or volatilizees, until wafer is rotated to unloading port.The present invention is simple and practical, increases wafer production capacity, increases economic efficiency；In addition, when wafer carries out volatilization technique, argon gas is conveyed to crystal column surface, the evaporation rate of crystal column surface etch by-products can be accelerated, further improves the production capacity of wafer in the unit interval.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuit manufacturing, and particularly relates to a reaction cavity for SiConi etching and an etching method for SiConi etching.
Background
Integrated circuits may be formed by processes that produce intricately patterned layers of materials on the surface of a substrate. Fabricating patterned materials on a substrate requires some controlled method for removing the exposed material. Chemical etching is used for a variety of purposes, including transferring a pattern in a photoresist into an underlying layer, thinning layers, or thinning the lateral dimensions of features already present on a substrate.
SiConi etching is commonly used for precleaning wafers prior to metal deposition and serves to remove silicon oxide from the substrate surface and reduce contact resistance. SiConi etching is a remote plasma-assisted dry etch process that involves simultaneous exposure of the substrate to plasma by-products. The SiConi etch is mostly conformal and selective to the silicon oxide layer, but does not easily etch silicon whether it is amorphous, crystalline or polycrystalline. Selectivity provides advantages for applications such as Shallow Trench Isolation (STI) and inter-layer dielectric (ILD) trench formation.
Solid by-products from the SiConi process grow on the substrate surface as substrate material is removed. Because the formed etching by-product is solid and can cover the surface of the substrate to block further etching, the external temperature needs to be increased so as to sublimate the solid by-product, and the solid by-product is further pumped out of the reaction cavity.
Fig. 1 is a schematic structural diagram of a conventional SiConi etching reaction chamber, which includes a reaction chamber 4, a wafer pedestal 2 is disposed in the reaction chamber 4, a clamping member 6 for clamping a wafer 1 and capable of lifting is disposed on the wafer pedestal 2, a heating plate 3 is disposed above the substrate 1, a remote plasma system 5 (RPS) for dissociating plasma is disposed on a top wall of the reaction chamber 4, the remote plasma system 5 is connected with a gas transmission pipeline 8 to provide an etchant for the wafer 1, a vacuum pump pipeline 7 is disposed on a side wall of the reaction chamber 4, and the vacuum pump pipeline 7 is used for pumping out a gasified etching byproduct in the reaction chamber 4. Wherein, the temperature of the wafer base 2 is kept between 0 ℃ and 50 ℃, and the temperature of the heating plate 3 is kept between 150 ℃ and 200 ℃.
The existing etching method for SiConi comprises the following steps: s1, providing a wafer 1 to be etched, and placing the wafer 1 on a wafer base 2, wherein the temperature of the wafer base 2 is kept between 0 and 50 ℃ and is far away from the heating plate 3; s2, the remote plasma system 5 conveys the etchant to the surface of the wafer 1; s3, when solid etching byproducts are generated on the surface of the wafer 1, the wafer 1 is lifted to a position close to the heating plate 3 by the clamping piece 6, the temperature of the heating plate 3 is kept between 150 ℃ and 200 ℃, and the solid etching byproducts are volatilized under the action of high temperature; s4, pumping the gasified etching by-products out of the reaction chamber 4 through the vacuum pump pipeline 7; s5, the clamping piece 6 lowers the wafer 1 to a position far away from the heating plate 3; and S6, repeating the steps S2 to S5 one or more times until the SiConi etching is finished.
The existing SiConi etching reaction cavity is used for enabling the wafer 1 to approach or be far away from the heating plate 3 through the lifting motion of the clamping piece 6, so that the wafer 1 is etched at a low temperature, etching byproducts are volatilized at a high temperature, and the wafer 1 finishes SiConi etching by repeating the lifting motion. However, the existing SiConi etching reaction chamber and method can only perform an etching process on a single wafer, and the yield of the processed wafer in unit time is low, the time for processing the wafer is long, and the economic benefit is not high.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a SiConi etching reaction cavity and a SiConi etching reaction method, which can increase the wafer capacity and improve the economic benefit.
The purpose of the invention is realized by the following technical scheme: the reaction cavity for SiConi etching comprises a reaction cavity, two groups of wafer bases, a gas transmission pipeline and a rotating frame; wherein,
the wafer bases are uniformly distributed along the circumferential direction of the reaction cavity, one group of wafer bases are low-temperature bases with the same temperature value, one group of wafer bases are high-temperature bases with the same temperature value, the number of each group of wafer bases is two or three, the low-temperature bases and the high-temperature bases are alternately arranged to form a circle, the temperature range of the low-temperature bases is 0-50 ℃, and the temperature range of the high-temperature bases is 150-200 ℃;
the gas transmission pipelines are arranged above the wafer bases and correspond to the wafer bases one by one, and are used for transmitting an etching agent for the wafers on the low-temperature bases and transmitting a volatile agent for the wafers on the high-temperature bases;
the rotary frame rotates along the same direction and comprises a rotary shaft, a rotary arm and a plurality of clamping pieces for clamping wafers, wherein the rotary shaft, the rotary arm and the plurality of clamping pieces are fixedly connected in sequence;
a loading port and an unloading port are arranged on the wall of the reaction cavity, the loading port corresponds to the low-temperature base, and the unloading port corresponds to the high-temperature base; and the wafer is conveyed to the loading port through the mechanical arm, and after the etching process is finished, the mechanical arm takes the wafer out of the reaction cavity from the unloading port.
Preferably, the gas delivery line above the low temperature pedestal is connected to a remote plasma system for dissociating the plasma to form the etchant.
Preferably, the reaction chamber is connected with a vacuum pump, and the vacuum pump pumps the gaseous etching by-products out of the reaction chamber.
Preferably, the gas transmission pipelines above the low-temperature base are connected in parallel, or/and the gas transmission pipelines above the high-temperature base are connected in parallel.
Preferably, a timer is arranged on the rotating frame, so that the rotating frame rotates for a preset angle according to a preset time value, and the preset angle is equal to the included angle of the adjacent wafer base.
Preferably, the loading port and the unloading port correspond to the adjacent low-temperature susceptor and the high-temperature susceptor respectively.
The invention also provides an etching method for SiConi, which comprises the following steps:
s1, placing the wafer on the low-temperature base from the loading port by the manipulator, wherein the temperature range of the low-temperature base is 0-50 ℃;
s2, introducing plasma into the remote plasma system, dissociating the plasma to form an etchant, and delivering the etchant to the surface of the wafer on the low-temperature base through the gas delivery pipeline, wherein the plasma comprises a fluorine-containing precursor and a hydrogen-containing precursor;
s3, when solid etching byproducts are generated on the surface of the wafer, the wafer is rotated to an adjacent high-temperature base by the rotating frame along the same direction, and the temperature range of the high-temperature base is 150-200 ℃;
s4, conveying a volatile agent to the surface of the wafer through a gas conveying pipeline above the high-temperature base so as to volatilize the solid etching by-products into a gas state;
s5, the vacuum pump pumps the gaseous etching by-products out of the reaction cavity;
and S6, the rotating frame rotates the wafer to the adjacent low-temperature base, the steps S2 to S5 are repeated until the wafer rotates to the unloading port, and the robot takes the wafer out of the reaction chamber.
Preferably, in step S2, the fluorine-containing precursor includes one or more of nitrogen trifluoride, hydrogen fluoride, diatomic fluorine, monoatomic fluorine, or fluorocarbons.
Preferably, in step S2, the hydrogen-containing precursor includes one or more of atomic hydrogen, molecular hydrogen, ammonia, hydrocarbon or incompletely halogenated hydrocarbon.
Preferably, the propellant is argon.
According to the SiConi etching reaction cavity provided by the invention, the plurality of wafer bases are arranged in the reaction cavity, the low-temperature bases and the high-temperature bases alternately enclose a circle, and the rotating frame rotates the wafer to the adjacent wafer base along the same direction for etching or volatilizing until the wafer rotates to the unloading port. The structure is simple and practical, the wafer capacity is increased, and the economic benefit is improved; in addition, when the wafer is subjected to the volatilization process, argon is conveyed to the surface of the wafer, so that the volatilization speed of etching byproducts on the surface of the wafer can be increased, and the productivity of the wafer in unit time can be further improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a structure of a wafer far from a heating plate in a conventional SiConi etching reaction chamber;
FIG. 2 is a schematic diagram of a wafer proximity heating plate structure used in a SiConi etching reaction chamber in the prior art;
FIG. 3 is a top view of a reaction chamber for SiConi etching in accordance with the present invention.
The numbers in the figures illustrate the following:
1. a wafer; 2. a wafer pedestal; 3. heating plates; 4. a reaction chamber; 5. a remote plasma system; 6. a clamping member; 7. a vacuum pump conduit; 8. a gas pipeline; 10. a reaction chamber; 21. a low temperature susceptor; 22. a high temperature pedestal; 30. a wafer; 40. a gas pipeline; 50. a rotating frame; 51. a rotating shaft; 52. a rotating arm; 53. a clamping member; 60. a remote plasma system; 70. a vacuum pump; 80. a load port; 90. an unloading port; 100. a robot arm.
Detailed Description
The following detailed description of the embodiments of the present invention will be provided in conjunction with the drawings and examples, so that how to implement the technical means for solving the technical problems and achieving the technical effects of the present invention can be fully understood and implemented.
As shown in fig. 3, fig. 3 is a top view of the reaction chamber for SiConi etching in the present invention, and the present invention provides a reaction chamber for SiConi etching, which includes a reaction chamber 10, two sets of wafer susceptors, a gas transmission pipeline 40, and a rotary frame 50; wherein,
the wafer bases are uniformly distributed along the circumferential direction of the reaction chamber 10, one group of wafer bases are low-temperature bases 21 with the same temperature value, one group of wafer bases are high-temperature bases 22 with the same temperature value, the number of each group of wafer bases is two or three, the low-temperature bases 21 and the high-temperature bases 22 are alternately arranged to form a circle, the temperature range of the low-temperature bases 21 is 0-50 ℃, and the temperature range of the high-temperature bases 22 is 150-200 ℃.
The gas transmission pipelines 40 are arranged above the wafer bases and correspond to the wafer bases one by one, and the gas transmission pipelines 40 are used for transmitting the etching agent to the wafer 30 on the low-temperature base 21 and transmitting the volatile agent to the wafer 30 on the high-temperature base 22; the rotating frame 50 rotates along the same direction, and includes a rotating shaft 51, a rotating arm 52 and a plurality of clamping members 53 for clamping the wafer 30, which are fixedly connected in sequence, wherein the rotating shaft 51 drives the rotating arm 52 to rotate the wafer 30 to the adjacent wafer pedestal.
A loading port 80 and an unloading port 90 are arranged on the wall of the reaction chamber 10, the loading port 80 corresponds to the low-temperature base 21, and the unloading port 90 corresponds to the high-temperature base 22; the wafer 30 is transferred to the load port 80 by the robot 100, and after the etching process is completed, the wafer 30 is taken out of the reaction chamber 10 from the unload port 90 by the robot 100.
The invention also includes a remote plasma system 60 connected to the gas delivery line 40 above the low temperature pedestal 21 for dissociating the plasma to form an etchant; and a vacuum pump 70 disposed on a sidewall of the reaction chamber 10 to pump the etching by-products in a gaseous state inside the reaction chamber 10 out of the reaction chamber 10.
Wherein, the remote plasma system 60 provides an etchant for the wafer 30 on the low temperature pedestal 21 through the gas transmission pipeline 40, when a solid etching by-product is generated on the surface of the wafer 30, the rotating frame 50 rotates the wafer 30 to the adjacent high temperature pedestal 22, the gas transmission pipeline 40 above the high temperature pedestal 22 transmits a volatile agent to the surface of the wafer 30 to volatilize the solid etching by-product into a gas state, the vacuum pump 70 pumps the gaseous etching by-product out of the reaction chamber 10, thereby completing a cyclic SiConi etching process, and the cyclic SiConi etching process is repeated according to a preset number of times until the SiConi etching is completed.
According to the SiConi etching reaction cavity provided by the invention, the plurality of wafer bases are arranged in the reaction cavity 10, the low-temperature bases 21 and the high-temperature bases 22 alternately enclose a circle, and the rotating frame 50 rotates the wafer 30 to the adjacent wafer base along the same direction for etching or volatilization until the wafer 30 rotates to the unloading opening 90. The invention has simple and practical structure, increases the wafer capacity and improves the economic benefit; in addition, when the wafer is subjected to the volatilization process, argon is conveyed to the surface of the wafer, so that the volatilization speed of etching byproducts on the surface of the wafer can be increased, and the productivity of the wafer in unit time can be further improved.
In the present invention, the gas transmission pipelines 40 are disposed above the low temperature susceptor 21 and the high temperature susceptor 22, and the gas transmission pipelines 40 above the low temperature susceptor 21 are preferably connected in parallel, or/and the gas transmission pipelines 40 above the high temperature susceptor 22 are preferably connected in parallel. The gas pipe 40 of the low temperature susceptor 21 delivers the etchant to the surface of the wafer 30, and the gas pipe 40 of the high temperature susceptor 22 delivers the volatile agent to the surface of the wafer 30.
In addition, a timer (not shown) is provided on the rotary rack 50, so that the rotary rack 50 is rotated by a predetermined angle according to a predetermined time value, and the predetermined angle is equal to the included angle of the adjacent wafer susceptor, and the rotary rack 50 is preferably rotated in the same direction.
Generally, the loading port 80 and the unloading port 90 are located at adjacent positions, that is, the loading port 80 and the unloading port 90 correspond to the adjacent low temperature susceptor 21 and high temperature susceptor 22, respectively, etching starts from the low temperature susceptor 21, volatilization is completed in the high temperature susceptor 22, and the rotating frame 50 rotates to the position of the unloading port 90 in the reaction chamber 10, that is, SiConi etching is completed.
In addition, the invention also provides an etching method for SiConi, which comprises the following steps:
s1, placing the wafer 30 on the low-temperature base 21 from the loading port 80 by the manipulator 100, wherein the temperature range of the low-temperature base 21 is 0-50 ℃; wherein the wafer 30 comprises a silicon oxide layer,
s2, introducing plasma into the remote plasma system 60, dissociating the plasma to form etchant, and delivering the etchant to the surface of the wafer 30 on the low temperature pedestal 21 through the gas delivery pipe 40, wherein the plasma comprises fluorine-containing precursor and hydrogen-containing precursor;
wherein the fluorine-containing precursor comprises one or more of nitrogen trifluoride, hydrogen fluoride, diatomic fluorine, monoatomic fluorine or fluoro-hydrocarbon compound, and the fluorine-containing precursor is preferably NF3(ii) a In step S2, the hydrogen-containing precursor includes one or more of atomic hydrogen, molecular hydrogen, ammonia, hydrocarbon or incompletely halogenated hydrocarbon, and the hydrogen-containing precursor is preferably NH3。
S3, when a solid etching by-product is generated on the surface of the wafer 30, the rotating frame 50 rotates the wafer 30 to the adjacent high temperature base 22 along the same direction, and the temperature range of the high temperature base 22 is 150-200 ℃;
s4, the gas pipeline 40 above the high temperature base 22 transports the volatile agent to the surface of the wafer 30 to volatilize the solid etching by-product into gas; wherein the propellant is preferably argon;
s5, the vacuum pump 70 pumps the gaseous etching by-products out of the reaction chamber 10;
s6, the rotating frame 50 rotates the wafer 30 to the adjacent low temperature susceptor 21, and repeats steps S2 to S5 until the wafer 30 rotates to the unloading port 90, and the robot 100 takes the wafer 30 out of the reaction chamber 10.
Example one
As shown in fig. 3, the present embodiment provides a reaction chamber for SiConi etching, comprising: the four wafer bases are uniformly distributed along the circumferential direction of the reaction chamber 10, each wafer base is provided with a temperature control device (not shown in the figure) to divide the wafer base into two low-temperature bases 21 and two high-temperature bases 22, the low-temperature bases 21 and the high-temperature bases 22 are alternately arranged to form a circle, the temperature value of each low-temperature base 21 is 30 ℃, and the temperature value of each high-temperature base 22 is 180 ℃. The wafer processing device further comprises a rotating frame 50 rotating clockwise, the rotating frame 50 comprises a rotating shaft 51, a rotating arm 52 and a plurality of clamping pieces 53 used for clamping wafers, the rotating shaft 51 drives the two rotating arms 52 to rotate the wafer 30 to a next adjacent wafer pedestal, and a timer (not shown in the figure) is arranged on the rotating frame 50 and rotates a preset angle at a preset time point, wherein the preset angle is preferably 45 degrees.
In this embodiment, gas transmission pipelines 40 are disposed above each wafer susceptor, the gas transmission pipelines 40 are connected in parallel above the low temperature susceptor 21, the gas transmission pipelines 40 are connected in parallel above the high temperature susceptor 22, the gas transmission pipelines 40 are connected to the remote plasma system 60 above the low temperature susceptor 21, and the gas transmission pipelines 40 transmit NF3And NH3To Remote Plasma System (RPS)60, NF3And NH3Will form NH under RPS excitation4F and NH4F·HF，NH4F and NH4F.HF is capable of etching silicon oxide on the surface of wafer 30, but simultaneously forming solid (NH)4)2SiF6Adsorbing on the surface of the wafer 30, thereby preventing the further proceeding of the etching process; the gas delivery pipe 40 on the high temperature susceptor 22 delivers argon gas to the wafer 30, and the solid (NH) on the surface of the wafer 30 is acted on by the argon gas at the same time of high temperature4)2SiF6And more rapidly volatilizes into a gaseous state, and the gaseous etch by-products are pumped out of the reaction chamber 10 by the vacuum pump 70 on the sidewall of the reaction chamber 10.
The embodiment correspondingly provides an etching method for SiConi, which comprises the following steps:
s1, providing two wafers 30 to be etched simultaneously, and placing the two wafers 30 above the two low-temperature pedestals 21 in sequence from the loading port 80 by the manipulator 100, wherein the temperature of the low-temperature pedestals 21 is kept at 30 ℃; wherein the wafer 30 comprises a silicon oxide layer;
s2, introducing plasma into the remote plasma system 60, dissociating the plasma to form etchant, and delivering the etchant to the surface of the wafer 30 on the low temperature base 21 through the gas delivery pipe 40, wherein the plasma is NF3And NH3NH is formed upon excitation by the remote plasma system 604F and NH4F·HF，NH4F and NH4F·The HF can etch the silicon oxide on the surface of the wafer 30.
S3, generating solid etching by-product (NH) on the surface of the wafer 304)2SiF6The rotating frame 50 rotates the wafer 30 to the next adjacent high temperature susceptor 22, and the temperature of the high temperature susceptor 22 is kept at 180 ℃;
s4, the gas pipeline 40 above the high temperature base 22 transmits argon gas to the surface of the wafer 30, so that the solid etching by-product is volatilized into gas;
s5, the vacuum pump 70 pumps the gaseous etching by-products out of the reaction chamber 10;
s6, the rotating frame 50 rotates the wafer 30 to the next adjacent low temperature susceptor 21, and repeats steps S2 to S5 once until the wafer 30 rotates to the unloading port 90, and the robot 100 takes the wafer 30 out of the unloading port 90.
The foregoing description shows and describes several preferred embodiments of the invention, but as aforementioned, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (11)
1. A reaction cavity for SiConi etching is characterized by comprising a reaction cavity, two groups of wafer bases, a gas transmission pipeline and a rotating frame; wherein,
the wafer bases are uniformly distributed along the circumferential direction of the reaction cavity, one group of wafer bases are low-temperature bases with the same temperature value, one group of wafer bases are high-temperature bases with the same temperature value, the number of each group of wafer bases is two or three, the low-temperature bases and the high-temperature bases are alternately arranged to form a circle, the temperature range of the low-temperature bases is 0-50 ℃, and the temperature range of the high-temperature bases is 150-200 ℃;
the gas transmission pipelines are arranged above the wafer bases and correspond to the wafer bases one by one, and are used for transmitting an etching agent for the wafers on the low-temperature bases and transmitting a volatile agent for the wafers on the high-temperature bases;
the rotary frame rotates along the same direction and comprises a rotary shaft, a rotary arm and a plurality of clamping pieces for clamping wafers, wherein the rotary shaft, the rotary arm and the plurality of clamping pieces are fixedly connected in sequence;
a loading port and an unloading port are arranged on the wall of the reaction cavity, the loading port corresponds to the low-temperature base, and the unloading port corresponds to the high-temperature base; and the wafer is conveyed to the loading port through the mechanical arm, and after the etching process is finished, the mechanical arm takes the wafer out of the reaction cavity from the unloading port.
2. The reaction chamber for SiConi etching as set forth in claim 1 wherein the gas delivery line above the low temperature pedestal is connected to a remote plasma system for dissociating the plasma to form an etchant.
3. The reaction chamber of claim 1, wherein the reaction chamber is connected to a vacuum pump, and the vacuum pump draws gaseous etching byproducts from the reaction chamber.
4. The reaction chamber of claim 1, wherein the gas delivery lines above the low temperature susceptor are connected in parallel, or/and the gas delivery lines above the high temperature susceptor are connected in parallel.
5. The reaction chamber as claimed in claim 1, wherein a timer is disposed on the spin stand to rotate the spin stand by a predetermined angle according to a predetermined time value, and the predetermined angle is equal to an included angle between adjacent wafer susceptors.
6. The reaction chamber of claim 1, wherein the load port and the unload port correspond to adjacent low temperature susceptors and high temperature susceptors, respectively.
7. An etching method for a reaction chamber of SiConi according to claim 1, comprising the steps of:
s1, placing the wafer on the low-temperature base from the loading port by the manipulator, wherein the temperature range of the low-temperature base is 0-50 ℃;
s2, introducing plasma into a remote plasma system, dissociating the plasma to form an etchant, and delivering the etchant to the surface of the wafer on the low-temperature base through the gas delivery pipeline, wherein the plasma comprises a fluorine-containing precursor and a hydrogen-containing precursor;
s3, when solid etching byproducts are generated on the surface of the wafer, the wafer is rotated to an adjacent high-temperature base by the rotating frame along the same direction, and the temperature range of the high-temperature base is 150-200 ℃;
s4, conveying a volatile agent to the surface of the wafer through a gas conveying pipeline above the high-temperature base so as to volatilize the solid etching by-products into a gas state;
s5, pumping the gaseous etching by-products out of the reaction cavity by a vacuum pump;
and S6, the rotating frame rotates the wafer to the adjacent low-temperature base, the steps S2 to S5 are repeated until the wafer rotates to the unloading port, and the robot takes the wafer out of the reaction chamber.
8. The etching method according to claim 7, wherein the fluorine-containing precursor in step S2 comprises one or more of nitrogen trifluoride, hydrogen fluoride, diatomic fluorine, monoatomic fluorine, or fluorocarbons.
9. The etching method according to claim 7, wherein the hydrogen-containing precursor in step S2 comprises one or more of atomic hydrogen, molecular hydrogen, ammonia, or hydrocarbon.
10. The etching method according to claim 9, wherein in the step S2, the hydrocarbon is an incompletely halogenated hydrocarbon.
11. The etching method according to claim 7, wherein the volatile agent is argon gas.
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| US5232511A (en) * | 1990-05-15 | 1993-08-03 | Semitool, Inc. | Dynamic semiconductor wafer processing using homogeneous mixed acid vapors |
| CN101421056A (en) * | 2004-03-16 | 2009-04-29 | 兰姆研究有限公司 | System, method and apparatus for self-cleaning dry etch |
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| US5232511A (en) * | 1990-05-15 | 1993-08-03 | Semitool, Inc. | Dynamic semiconductor wafer processing using homogeneous mixed acid vapors |
| CN101421056A (en) * | 2004-03-16 | 2009-04-29 | 兰姆研究有限公司 | System, method and apparatus for self-cleaning dry etch |
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