CN103779638A - Magnetoelectric double-adjustable-ultra-wide-band band-pass filter of symmetrical C-type microstrip structure and method - Google Patents
Magnetoelectric double-adjustable-ultra-wide-band band-pass filter of symmetrical C-type microstrip structure and method Download PDFInfo
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- CN103779638A CN103779638A CN201410017576.9A CN201410017576A CN103779638A CN 103779638 A CN103779638 A CN 103779638A CN 201410017576 A CN201410017576 A CN 201410017576A CN 103779638 A CN103779638 A CN 103779638A
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Abstract
The invention discloses a magnetoelectric double-adjustable-ultra-wide-band band-pass filter of a symmetrical C-type microstrip structure and a method thereof. The filter includes a magnetoelectric laminated material substrate, symmetrical C-type metal microstrip lines and electromagnets. A magnetoelectric laminated material includes a ferromagnetic phase and a piezoelectric phase from top to bottom. The upper and lower surfaces of the piezoelectric phase are each coated with a metal thin film respectively and the metal thin films are bonded with the ferromagnetic phase through an epoxy resin. The lower surface of the magnetoelectric laminated material substrate is grounded and the metal mictorstrip lines are corroded on the upper surface of the magnetoelectric laminated material substrate. A pair of electromagnets are arranged at the upper and lower ends of the magnetoelectric laminated material substrate. Big-frequency-band coarse adjustment is realized through adjustment of the size of a magnetic field and at the same time, electric tuning is used for small-frequency-band accurate adjustment. The magnetoelectric double-adjustable-ultra-wide-band band-pass filter not only overcomes disadvantages that traditional filters are incapable of realizing adjustability of work frequency ranges and larger in loss and the like, but also overcomes disadvantages that general megnetoelectric adjustable devices are narrower in band-pass bandwidth.
Description
Technical field
The present invention relates to a kind of miniaturization adjustable microwave device, particularly the two variable band-pass filters of a kind of magnetoelectricity of the ultra broadband based on symmetrical C type microstrip structure.
Background technology
In recent years, wireless communication technology development is swift and violent, also more and more higher to the requirement of communication precision aspect military's radar communication, and also more and more becomes the focus of research for the bandwidth characteristic of microwave device and adjustability.Laminated this focus that is integrated as of microwave device and magnetoelectricity provides a new thinking of development.
For common microwave filter, often cannot realize the adjustable function of frequency band, and for the adjustable or electric adjustable microwave device of the magnetic being commercially available, often there is frequency band narrower, the shortcoming such as governing speed is slow, and power consumption is larger.The method that this introducing magnetoelectricity laminate is combined with conventional microwave filters is optimized performance-adjustable.
It is less that the research combining with microwave device for magnetoelectricity laminate is in the market done, the existing research about the two adjustable microwave devices of magnetoelectricity also all cannot realize the super wide characteristic of frequency band, and existing traditional ultra wide band bandpass filter also cannot be realized the adjustable effect of frequency band.Day by day become the focus that the fields such as electronic warfare under wireless communication system and military's platform are paid close attention to about the characteristic of the two adjustable ultra broadband devices of magnetoelectricity.
Summary of the invention
The object of the invention is to inherit the tunable advantage of magnetoelectricity adjustable microwave device working frequency range, overcome the defects such as existing magnetoelectricity adjustable microwave bandwidth of a device is narrower simultaneously, a kind of two adjustable ultra wide band bandpass filters of magnetoelectricity and method of symmetrical C type microstrip structure is provided.
The two adjustable ultra wide band bandpass filters of magnetoelectricity of symmetrical C type microstrip structure, it comprises the substrate of magnetoelectricity laminate, symmetrical C type metal micro-strip line, electromagnet; The substrate of magnetoelectricity laminate comprises connected ferromagnetic phase, piezoelectric phase, and the upper surface of described piezoelectric phase is coated with first layer metal film, and lower surface is coated with second layer metal film, uses epoxy resin bonding between first layer metal film and ferromagnetic phase; The lower surface ground connection of magnetoelectricity laminate substrate, upper surface utilizes metallic film technique to erode away symmetrical C type metal micro-strip line, places a pair of electromagnet at the two ends up and down of this filter; Described symmetrical C type metal micro-strip line is provided with two ports, i.e. input port, output port.
The described ferromagnetic yttrium iron garnet YIG that adopts mutually, piezoelectric phase adopts lead zirconate titanate PZT.
Described first layer metal film, second layer metal film are silver-colored film.
Apply external magnetic field by described electromagnet.
Apply external electrical field by described first layer metal film, second layer metal film.
Described filter, microwave signal is inputted by input port, through the transmission of symmetrical C type metal micro-strip line, exports by output port.
The magnetoelectricity control method of described filter, when electromagnet is when to magnetoelectricity laminate, substrate applies the external bias magnetic field of vertical direction, the magnetic permeability of ferromagnetic phase changes, thereby cause the working frequency range of described filter to be offset, can apply different bias magnetic fields to magnetoelectricity laminate by the distance between electric current and south poles on regulating magnet, realize the coarse adjustment of filter operating frequency; Apply an external voltage at upper and lower two the surperficial metallic films of piezoelectric phase, by the capacity effect between two metallic films, piezoelectric phase is inner can produce equally distributed electric field, can realize the fine adjustment of this band pass filter operating frequency in tens megahertzes by described electric field, by changing the positive negative direction of electric field, realize the left and right skew of filter operating frequency.
Compared with prior art, the invention has the beneficial effects as follows:
First, the present invention utilizes symmetrical C type microstrip line construction, the transmission coupling of the metal micro-strip line by two C shapes, the super wide effect of realized-three dB bandwidth, overcome conventional microwave filters and cannot realize wide band shortcoming, and this structure is compact, and size is less, be more easy to make with respect to traditional microstrip line construction.The present invention utilizes magnetoelectricity laminate to combine with microstrip structure, apply mutually bias magnetic field and by metallic film being applied to external voltage, the passband of ultra broadband has been realized to the coarse adjustment of G hertz scope and the accurate adjustment of M hertz scope ferromagnetic by two electromagnet, overcome that traditional microwave device working frequency range is non-adjustable or adjustable frequency band is single, cannot be in little band limits the shortcoming such as fine adjustment.The independence of working between magnetic field of the present invention coarse adjustment and electric field fine adjustment, is independent of each other.Magnetoelectricity laminate is combined with symmetrical C type microstrip structure, not only realize the super wide Te Qie of frequency band, but also flexibility and the degree of regulation of adjustable microwave device are improved, there is very large novelty at wireless communication field, especially there is good prospect in military's radar communication application aspect.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is the vertical view of the two adjustable ultra wide band bandpass filters of magnetoelectricity of symmetrical C type microstrip structure;
Fig. 2 is the structural representation of the two adjustable ultra wide band bandpass filters of magnetoelectricity of symmetrical C type microstrip structure;
Fig. 3 is the working frequency range of the two adjustable ultra wide band bandpass filters of the magnetoelectricity of the symmetrical C type microstrip structure magnetic adjustability skew schematic diagram within the scope of 4.2 ~ 5.2 GHz;
Fig. 4 is the schematic diagram that is related to of the working frequency range side-play amount of the two adjustable ultra wide band bandpass filters of the magnetoelectricity of symmetrical C type microstrip structure and extra electric field;
In figure, magnetoelectricity laminate substrate 1, symmetrical C type metal micro-strip line 2, electromagnet 3, ferromagnetic phase 4, piezoelectric phase 5, first layer metal film 6, second layer metal film 7.
Embodiment
As shown in Figure 1, 2, the two adjustable ultra wide band bandpass filters of a kind of magnetoelectricity of symmetrical C type microstrip structure, it comprises magnetoelectricity laminate substrate 1, symmetrical C type metal micro-strip line 2, electromagnet 3; Magnetoelectricity laminate substrate 1 comprises ferromagnetic phase 4, piezoelectric phase 5, wherein plates respectively layer of metal film, i.e. first layer metal film 6 on two surfaces up and down of piezoelectric phase 5, second layer metal film 7, uses epoxy resin bonding between first layer metal film 6 and ferromagnetic phase 4; The lower surface ground connection of magnetoelectricity laminate substrate 1, upper surface utilizes metallic film technique to erode away microstrip line 2, places a pair of electromagnet 3 at the two ends up and down of this filter; Described metal micro-strip line has two ports, i.e. input port, output port.
Described ferromagnetic phase 4 is yttrium iron garnet YIG, and piezoelectric phase 5 is lead zirconate titanate PZT.
Described first layer metal film 6, second layer metal film 7 are silver-colored film.
Apply external magnetic field by described electromagnet 3.
Apply external electrical field by described first layer metal film 5, second layer metal film 7.
Input by described input port 1, through the transmission of symmetrical C type metal micro-strip line, export by output port 2.
The magnetoelectricity control method of the two adjustable ultra wide band bandpass filters of a kind of magnetoelectricity based on symmetrical C type microstrip structure, in the time that electromagnet 3 applies the external bias magnetic field of vertical direction to magnetoelectricity laminate substrate 1, the magnetic permeability of ferromagnetic phase 4 changes, thereby cause the working frequency range of the two adjustable ultra wide band bandpass filters of magnetoelectricity take magnetoelectricity laminate as substrate to be offset, can apply different bias magnetic fields to magnetoelectricity laminate 4 by the distance between electric current and south poles on regulating magnet 3, realize the coarse adjustment of filter operating frequency; Apply an external voltage at the metallic film of upper and lower two sides of piezoelectric phase 5, by the capacity effect between two metallic films, piezoelectric phase 5 is inner can produce equally distributed electric field, can realize the fine adjustment of this band pass filter operating frequency in tens megahertzes by described electric field, by changing the positive negative direction of electric field, realize the left and right skew of filter operating frequency.
Embodiment
The two adjustable ultra wide band bandpass filters of magnetoelectricity based on symmetrical C type microstrip structure as shown in Figure 1, 2.The ferromagnetic phase of magnetoelectricity laminate and piezoelectric phase are selected respectively YIG and PZT bi-material.Wherein YIG is of a size of 32.2mm × 20mm × 1.1mm; PZT is of a size of 32.2mm × 20mm × 1.1mm.Meanwhile, plate respectively one deck silver film in the upper and lower surfaces of PZT layer, it is of a size of: 32.2mm × 20mm × 0.005mm.At the upper surface of magnetoelectricity laminate substrate, erode away by metallic film technique the metal micro-strip line that thickness is 0.018mm.
When the two adjustable ultra wide band bandpass filters of magnetoelectricity based on symmetrical C type microstrip structure are worked, the input port 1 of microwave signal from Fig. 1 inputted, and judges the characteristic of filter by observing the amplitude-frequency characteristic of output port 2.Fig. 3 has shown that in the time applying different bias magnetic fields by electromagnet to ferromagnetic phase YIG filter is operated in the tunable characteristic of magnetic of 4.2 ~ 5.2GHz frequency range.In the time that additional bias magnetic field size is 0Oe, its Out-of-band rejection-below 20dB ,-three dB bandwidth reaches 480MHz, realizes ultra broadband bandwidth characteristic.Along with the increase of externally-applied magnetic field, the working frequency range of filter is skew to the right thereupon, has realized the effect of magnetic field coarse adjustment.Fig. 4 has shown the working frequency range side-play amount of the two adjustable ultra wide band bandpass filters of magnetoelectricity based on symmetrical C type microstrip structure and the relation of extra electric field, when externally-applied magnetic field keeps 100 Oe when constant, there is the electric tunable characteristic of approximately linear in its electric field E within the scope of-50 kV/cm to 50 kV/cm.
Claims (7)
1. the two adjustable ultra wide band bandpass filters of the magnetoelectricity of symmetrical C type microstrip structure, is characterized in that, it comprises magnetoelectricity laminate substrate (1), symmetrical C type metal micro-strip line (2), electromagnet (3); Magnetoelectricity laminate substrate (1) comprises connected ferromagnetic phase (4), piezoelectric phase (5), the upper surface of described piezoelectric phase (5) is coated with first layer metal film (6), lower surface is coated with second layer metal film (7), uses epoxy resin bonding between first layer metal film (6) and ferromagnetic phase (4); The lower surface ground connection of magnetoelectricity laminate substrate (1), upper surface utilizes metallic film technique to erode away symmetrical C type metal micro-strip line (2), places a pair of electromagnet (3) at the two ends up and down of this filter; Described symmetrical C type metal micro-strip line (2) is provided with two ports, i.e. input port, output port.
2. filter according to claim 1, is characterized in that, described ferromagnetic phase (4) adopts yttrium iron garnet YIG, and piezoelectric phase (5) adopts lead zirconate titanate PZT.
3. filter according to claim 1, is characterized in that, described first layer metal film (6), second layer metal film (7) are silver-colored film.
4. filter according to claim 1, is characterized in that, applies external magnetic field by described electromagnet (3).
5. filter according to claim 1, is characterized in that, applies external electrical field by described first layer metal film (6), second layer metal film (7).
6. filter according to claim 1, is characterized in that, microwave signal is inputted by input port, through the transmission of symmetrical C type metal micro-strip line (2), exports by output port.
7. the magnetoelectricity control method of a filter according to claim 1, it is characterized in that, in the time that electromagnet (3) applies the external bias magnetic field of vertical direction to magnetoelectricity laminate substrate (1), the magnetic permeability of ferromagnetic phase (4) changes, thereby cause the working frequency range of described filter to be offset, can apply different bias magnetic fields to magnetoelectricity laminate (4) by the electric current on regulating magnet (3) and the distance between south poles, realize the coarse adjustment of filter operating frequency; Apply an external voltage at upper and lower two the surperficial metallic films of piezoelectric phase (5), by the capacity effect between two metallic films, piezoelectric phase (5) is inner can produce equally distributed electric field, can realize the fine adjustment of this band pass filter operating frequency in tens megahertzes by described electric field, by changing the positive negative direction of electric field, realize the left and right skew of filter operating frequency.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105225833A (en) * | 2015-10-26 | 2016-01-06 | 电子科技大学 | A kind of modulator approach of magnetic thin film noise suppressor bandwidth |
| CN114039176A (en) * | 2021-09-23 | 2022-02-11 | 武汉滨湖电子有限责任公司 | Dual-band frequency-adjustable microstrip band-pass filter |
| CN118352756A (en) * | 2024-06-17 | 2024-07-16 | 成都威频科技有限公司 | Adjustable band-pass filter |
Citations (3)
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| US6326866B1 (en) * | 1998-02-24 | 2001-12-04 | Murata Manufacturing Co., Ltd. | Bandpass filter, duplexer, high-frequency module and communications device |
| CN101038977A (en) * | 2006-03-16 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Open loop coupling band-pass filter based on microstrip capacitive load |
| CN203180032U (en) * | 2013-03-21 | 2013-09-04 | 中国计量学院 | Magnetic-electric dual-adjustable band pass filter |
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2014
- 2014-01-15 CN CN201410017576.9A patent/CN103779638A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6326866B1 (en) * | 1998-02-24 | 2001-12-04 | Murata Manufacturing Co., Ltd. | Bandpass filter, duplexer, high-frequency module and communications device |
| CN101038977A (en) * | 2006-03-16 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Open loop coupling band-pass filter based on microstrip capacitive load |
| CN203180032U (en) * | 2013-03-21 | 2013-09-04 | 中国计量学院 | Magnetic-electric dual-adjustable band pass filter |
Non-Patent Citations (1)
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| WEI WANG ET AL: "A Dual-Band Bandpass Filter Using open-loop resonator", 《2012 5TH GLOBAL SYMPOSIUM ON MILLIMETER WAVES(GSMM 2012)》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105225833A (en) * | 2015-10-26 | 2016-01-06 | 电子科技大学 | A kind of modulator approach of magnetic thin film noise suppressor bandwidth |
| CN114039176A (en) * | 2021-09-23 | 2022-02-11 | 武汉滨湖电子有限责任公司 | Dual-band frequency-adjustable microstrip band-pass filter |
| CN118352756A (en) * | 2024-06-17 | 2024-07-16 | 成都威频科技有限公司 | Adjustable band-pass filter |
| CN118352756B (en) * | 2024-06-17 | 2024-09-03 | 成都威频科技有限公司 | Adjustable band-pass filter |
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Application publication date: 20140507 |