CN103594333A - Manufacturing method for transparent capacitor - Google Patents
Manufacturing method for transparent capacitor Download PDFInfo
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- CN103594333A CN103594333A CN201310554256.2A CN201310554256A CN103594333A CN 103594333 A CN103594333 A CN 103594333A CN 201310554256 A CN201310554256 A CN 201310554256A CN 103594333 A CN103594333 A CN 103594333A
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- transparent
- transparency electrode
- electric capacity
- film
- dielectric layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses a manufacturing method for a transparent capacitor. The method comprises the steps of forming a first transparent electrode (1), forming a transparent insulating medium layer (2) on the first transparent electrode (1) through a coating technique, a silk-screen printing technique and the like, and forming a second transparent electrode (3) on the transparent insulating medium layer (2) through an evaporation technique, a sputtering technique or the like. All layers of the transparent capacitor are made of transparent materials, so that the transparent capacitor is good in light transmission and free of light shielding. Thus, the light distribution and the light transmission of the whole display panel are improved, and further the performance of the display panel is improved.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly a kind of manufacture method of transparent electric capacity.
Background technology
In demonstration field, active matrix display panel field particularly, active matrix display panel comprises for driving the thin-film transistor of pixel cell, the holding capacitor that is positioned at the pixel electrode on thin-film transistor and is electrically connected to pixel electrode.Holding capacitor, for stored charge, generally includes capacitor lower electrode, electric capacity top electrode and dielectric between the two.In active matrix display panel, can utilize transparent material to make transparent film transistor, such as materials such as ZnO, can improve like this whole clearing degree of display floater, improve light and take out efficiency, and conventionally all adopt conventional material manufacture for the holding capacitor of stored charge, conventional material is opaque, therefore understand shading, thereby affect the transparency of display floater, and then affect the performance of whole display floater.
Summary of the invention
In view of this, the present invention is directed to the problem of prior art, proposed a kind of manufacture method of transparent electric capacity.It is applied in active matrix display panel and as holding capacitor, the bottom electrode of transparent electric capacity, top electrode and dielectric are therebetween all transparent material, permeability to light is good, not shading, thereby can improve light distributivity and the light transmission of whole display floater, and then improve the performance of display floater.
The manufacture method of the transparent electric capacity that the present invention proposes comprises:
Form the first transparency electrode 1;
In the first transparency electrode 1, form transparent insulation dielectric layer 2; And
On transparent insulation dielectric layer 2, form the second transparency electrode 3.
Accompanying drawing explanation
Accompanying drawing 1 is the overall structure of the transparent electric capacity of the present invention's proposition.
Embodiment
Below with reference to Fig. 1, describe structure and the manufacture method thereof of transparent electric capacity of the present invention in detail.For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.
As shown in fig. 1, transparent electric capacity of the present invention comprises the first transparency electrode 1, and it is as the bottom electrode of transparent electric capacity; Be positioned at the transparent insulation dielectric layer 2 in the first transparency electrode 1, it is as the charge storage portion of transparent electric capacity; And being positioned at the second transparency electrode 3 on transparent insulation dielectric layer 2, it is as the top electrode of transparent electric capacity.
Wherein the material of the first transparency electrode 1 and the second transparency electrode 3 can be the material with transparent conductivity, for example TCO(transparent conductive oxide), can be specifically ITO(tin indium oxide), ZnO(zinc oxide), SnO
2(tin oxide), FTO(fluorine doped indium oxide), ATO(antimony doped indium oxide), AZO(aluminium doped zinc oxide) in the laminated film of one or more or above-mentioned material.The material of the first transparency electrode 1 and the second transparency electrode 3 can be identical or different, and their thickness is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The material of transparent insulation dielectric layer 2 can be transparent inorganic material or transparent organic material, preferably clear organic material, specifically comprise: transparent polypropylene film, transparent polyester film (PET), transparent PPS (polyphenylene sulfide) films (PPS), transparency polycarbonate film (PC), transparent polyphenyl methylene naphthalene film (PEN), transparent polyvinylidene fluoride film (PVPF) etc., or the composite membrane of above-mentioned material, and the thickness of transparent insulation dielectric layer 2 is less than or equal to 3 μ m, preferred 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The manufacture method of the transparent electric capacity in following key diagram 1.
Step 1: form the first transparency electrode 1;
Step 2: form transparent insulation dielectric layer 2 by techniques such as coating, silk screen printings in the first transparency electrode 1;
Step 3: form the second transparency electrode 3 by techniques such as evaporation or sputters on transparent insulation dielectric layer 2.
Wherein the material of the first transparency electrode 1 and the second transparency electrode 3 can be the material with transparent conductivity, for example TCO(transparent conductive oxide), can be specifically ITO(tin indium oxide), ZnO(zinc oxide), SnO
2(tin oxide), FTO(fluorine doped indium oxide), ATO(antimony doped indium oxide), AZO(aluminium doped zinc oxide).The material of the first transparency electrode 1 and the second transparency electrode 3 can be identical or different, and their thickness is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The material of transparent insulation dielectric layer 2 can be transparent inorganic material or transparent organic material, preferably clear organic material, specifically comprise: transparent polypropylene film, transparent polyester film (PET), transparent PPS (polyphenylene sulfide) films (PPS), transparency polycarbonate film (PC), transparent polyphenyl methylene naphthalene film (PEN), transparent polyvinylidene fluoride film (PVPF) etc., and the thickness of transparent insulation dielectric layer 2 is less than or equal to 3 μ m, preferred 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
So far, detailed explanation above transparent electric capacity of the present invention and manufacture method thereof, the electric capacity making with respect to existing method, transparent electric capacity of the present invention is because its bottom electrode, top electrode and dielectric are therebetween all transparent material, therefore good to the permeability of light, not shading, thus light distributivity and the light transmission of whole display floater can be improved, and then improve the performance of display floater.Embodiment mentioned above is only the preferred embodiments of the present invention, and it is intended to that the present invention will be described but not it is limited.In the situation that do not depart from the spirit and scope of claims of the present invention, those skilled in the art obviously can make any changes and improvements to the present invention, and protection scope of the present invention is limited by claims.
Claims (4)
1. a manufacture method for transparent electric capacity, comprising:
Step 1: form the first transparency electrode;
Step 2: form transparent insulation dielectric layer by techniques such as coating, silk screen printings in the first transparency electrode;
Step 3: form the second transparency electrode by techniques such as evaporation or sputters on transparent insulation dielectric layer.
2. the manufacture method of transparent electric capacity according to claim 1, wherein:
The material of the first transparency electrode and the second transparency electrode is the material with transparent conductivity, TCO for example, and wherein TCO is ITO, ZnO, SnO
2, one or more or above-mentioned material in FTO, ATO, AZO laminated film.
3. the manufacture method of transparent electric capacity according to claim 2, wherein:
The thickness of the first transparency electrode and the second transparency electrode is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
4. the manufacture method of transparent electric capacity according to claim 2, wherein:
The material of transparent insulation dielectric layer comprises: the composite membrane of transparent polypropylene film, transparent polyester film (PET), transparent PPS (polyphenylene sulfide) films (PPS), transparency polycarbonate film (PC), transparent polyphenyl methylene naphthalene film (PEN), transparent polyvinylidene fluoride film (PVPF) or above-mentioned material, and the thickness of transparent insulation dielectric layer is less than or equal to 3 μ m, preferred 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554256.2A CN103594333A (en) | 2013-11-08 | 2013-11-08 | Manufacturing method for transparent capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554256.2A CN103594333A (en) | 2013-11-08 | 2013-11-08 | Manufacturing method for transparent capacitor |
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| Publication Number | Publication Date |
|---|---|
| CN103594333A true CN103594333A (en) | 2014-02-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310554256.2A Pending CN103594333A (en) | 2013-11-08 | 2013-11-08 | Manufacturing method for transparent capacitor |
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| CN (1) | CN103594333A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111653544A (en) * | 2020-06-11 | 2020-09-11 | 华虹半导体(无锡)有限公司 | MIM capacitor and method for manufacturing the same |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170770A (en) * | 1984-09-13 | 1986-04-11 | Sharp Corp | Solar cell having energy accumulating function |
| CN1188368A (en) * | 1996-12-19 | 1998-07-22 | 三洋电机株式会社 | Self-luminous image display device |
| US6084579A (en) * | 1996-11-29 | 2000-07-04 | Sanyo Electric Co., Ltd. | Display apparatus using electroluminescence elements |
| CN1636914A (en) * | 2003-12-16 | 2005-07-13 | 阿苏拉布股份有限公司 | Method for manufacturing a transparent element with invisible electrodes |
| CN1911629A (en) * | 2005-08-12 | 2007-02-14 | 荆门市鑫源包装有限公司 | High transparency polycarbonate film and sheet material production technology |
| US20090085037A1 (en) * | 2007-09-27 | 2009-04-02 | Au Optronics Corp. | Array substrate for liquid crystal display and method for fabricating the same |
| CN101419367A (en) * | 2007-10-22 | 2009-04-29 | 株式会社日立显示器 | Liquid crystal display device |
| US20100073530A1 (en) * | 2008-09-22 | 2010-03-25 | Palo Alto Research Center Incorporated | Method and Apparatus for Using Thin-Film Transistors and MIS Capacitors as Light-Sensing Elements in Charge Mapping Arrays |
| US20110297944A1 (en) * | 2010-06-07 | 2011-12-08 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
| TWM462429U (en) * | 2013-03-26 | 2013-09-21 | Chunghwa Picture Tubes Ltd | Capacitor structure of gate driver in panel |
-
2013
- 2013-11-08 CN CN201310554256.2A patent/CN103594333A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170770A (en) * | 1984-09-13 | 1986-04-11 | Sharp Corp | Solar cell having energy accumulating function |
| US6084579A (en) * | 1996-11-29 | 2000-07-04 | Sanyo Electric Co., Ltd. | Display apparatus using electroluminescence elements |
| CN1188368A (en) * | 1996-12-19 | 1998-07-22 | 三洋电机株式会社 | Self-luminous image display device |
| CN1636914A (en) * | 2003-12-16 | 2005-07-13 | 阿苏拉布股份有限公司 | Method for manufacturing a transparent element with invisible electrodes |
| CN1911629A (en) * | 2005-08-12 | 2007-02-14 | 荆门市鑫源包装有限公司 | High transparency polycarbonate film and sheet material production technology |
| US20090085037A1 (en) * | 2007-09-27 | 2009-04-02 | Au Optronics Corp. | Array substrate for liquid crystal display and method for fabricating the same |
| CN101419367A (en) * | 2007-10-22 | 2009-04-29 | 株式会社日立显示器 | Liquid crystal display device |
| US20100073530A1 (en) * | 2008-09-22 | 2010-03-25 | Palo Alto Research Center Incorporated | Method and Apparatus for Using Thin-Film Transistors and MIS Capacitors as Light-Sensing Elements in Charge Mapping Arrays |
| US20110297944A1 (en) * | 2010-06-07 | 2011-12-08 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
| TWM462429U (en) * | 2013-03-26 | 2013-09-21 | Chunghwa Picture Tubes Ltd | Capacitor structure of gate driver in panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111653544A (en) * | 2020-06-11 | 2020-09-11 | 华虹半导体(无锡)有限公司 | MIM capacitor and method for manufacturing the same |
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Application publication date: 20140219 |
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