CN103413877B - The growing method of epitaxial structure quantum well stress release layer and epitaxial structure thereof - Google Patents
The growing method of epitaxial structure quantum well stress release layer and epitaxial structure thereof Download PDFInfo
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Abstract
The invention provides growing method and the epitaxial structure thereof of epitaxial structure quantum well stress release layer, comprise the quantum well stress release layer that gross thickness is 160nm, does is described quantum well stress release layer the HT mixing In and Al? mqw layer, comprises the GaN layer of 40nm thickness and the Al of 2nm thickness
yin
xga
(1-x-y)n layer, wherein x=0.05-0.08, y=0.02-0.05.Is growing method of the present invention by amendment HT? the energy band diagram of MQW, realizes the barrier effect to entering luminous zone electronics, reduces electronics and enters the probability that non-radiative recombination occurs for p layer and hole; Further, at HT? MQW by the electronics that stops through two-dimensional diffusion, evenly injection luminous zone, improve the combined efficiency in electronics and hole, lifting brightness.
Description
Technical field
The present invention relates to LED epitaxial scheme technical field, especially, relate to a kind of growing method and epitaxial structure thereof of epitaxial structure quantum well stress release layer.
Background technology
Using the light-emitting diode (LED) based on GaN as a kind of efficient, environmental protection, green New Solid lighting source, there is low-voltage, low-power consumption, volume be little, lightweight, the life-span long, high reliability lamp advantage, be widely used in rapidly traffic lights, cell phone back light source, outdoor full color display screen, landscape light in city, automobile interior exterior lamp, Tunnel Lamp etc.
Therefore, the various aspects of performance of LED promotes and is all paid close attention to by industry.
Summary of the invention
The object of the invention is the growing method and the epitaxial structure thereof that provide a kind of epitaxial structure quantum well stress release layer, to solve the technical problem improving LED luminance further.
For achieving the above object, the invention provides a kind of growing method of epitaxial structure quantum well stress release layer, comprise process substrate, low temperature growth buffer GaN layer successively, grow the GaN layer that undopes, grow GaN layer, growth active layer MQW, growing P-type AlGaN layer, growth P-type GaN layer, the growing InGaN layer step of mixing Si;
Mix between SiGaN layer step and growth active layer MQW step in growth, comprise grown quantum trap stress release layer steps A:
In temperature be 750-800 DEG C, 300mbar reative cell in, pass into trimethyl indium, trimethyl gallium, triethyl-gallium and trimethyl aluminium, generate the GaN layer of 40nm thickness and the Al of 2nm thickness
yin
xga
(1-x-y)n layer, wherein x=0.05-0.08, y=0.02-0.05, gross thickness is 160nm.
Preferably, step is comprised before described steps A:
S1, process substrate: 1000-1100 DEG C hydrogen atmosphere under, process Sapphire Substrate 5-6 minute;
S2, low temperature growth buffer GaN layer: be cooled to 500-550 DEG C, growth thickness is the low temperature buffer GaN layer of 30-40nm on a sapphire substrate;
S3, growth undope GaN layer: be warming up to 1000-1100 DEG C, continued propagation thickness is the GaN layer that undopes of 1-2.5 μm;
The GaN layer of Si is mixed in S4, growth: continued propagation thickness is the GaN layer that the N-type of 2-4 μm mixes 16 ~ 32sccmSi, and the doping content of Si is 5E18-2E19atom/cm
3.
Preferably, step is comprised after described steps A:
D1, cyclical growth active layer MQW: the thickness of low temperature 750 DEG C of grow doping 250 ~ 500sccmIn is the In of 3nm
xga
(1-x)n layer, wherein x=0.20-0.21, high temperature 840 DEG C of growth thickness are the GaN layer of 12nm, In
xga
(1-x)the periodicity of N/GaN layer is 15; The doping content of In is 1E19-1E20atom/cm
3.
D2, growing P-type AlGaN layer: increase the temperature to the P type AlGaN layer that 930-950 DEG C of continued propagation thickness is 20-30nm;
D3, growth P-type GaN layer: increase the temperature to the P type GaN layer of mixing 600 ~ 800sccmMg that 950-980 DEG C of continued propagation thickness is 0.15-0.20 μm; The doping content of Mg is 1E19 ~ 1E20atom/cm
3;
D4, growing InGaN layer: when reducing the temperature to 650-680 DEG C, growth thickness is the InGaN layer of mixing 1200 ~ 1800sccmMg of 5-10nm; The doping content of Mg is 1E20 ~ 1E21atom/cm
3;
D5, reduce the temperature to 700-750 DEG C, activate P type GaN layer in a nitrogen atmosphere, duration 20-30 minute.
The invention also discloses a kind of epitaxial structure, comprise the quantum well stress release layer that gross thickness is 160nm, described quantum well stress release layer is the high temperature multi layer quantum well stress release layer mixing In and Al, comprises the GaN layer of 40nm thickness and the Al of 2nm thickness
yin
xga
(1-x-y) N layer, wherein x=0.05-0.08, y=0.02-0.05.
Preferably, under described quantum well stress release layer, comprise successively from top to bottom:
GaN nucleating layer, thickness is 30-40nm;
Undoped uGaN resilient coating, thickness is 1-2.5 μm;
NGaN layer, thickness is the doping content of 2-4 μm, Si is 5E18-2E19atom/cm
3.
Preferably, on described quantum well stress release layer, comprise successively from top to bottom:
Mix indium well layer, comprise InGa
(1-x)n layer and GaN layer, wherein, In
xga
(1-x)the thickness of N layer is 3nm, and the doping content of doping In, In is 1E19-1E20atom/cm
3; The thickness of GaN layer is 12nm; Described In
xga
(1-x)the periodicity of N layer and described GaN layer overlap is 15;
P type AlGaN layer, thickness is 20-30nm;
P type GaN layer, thickness is the doping content of 0.15-0.20 μm, Mg is 1E19 ~ 1E20atom/cm
3;
InGaN layer, thickness is the doping content of 5-10nm, Mg is 1E20 ~ 1E21atom/cm
3.
The present invention has following beneficial effect:
1, brightness is promoted: growing method of the present invention is by amendment HTMQW (hightemperaturemultiplequantumwell, high temperature multi layer quantum well stress release layer) energy band diagram, realize the barrier effect entering luminous zone electronics, reduce electronics and enter the probability that non-radiative recombination occurs for p layer and hole; Further, at HTMQW by the electronics that stops through two-dimensional diffusion, evenly injection luminous zone, improve the combined efficiency in electronics and hole, lifting brightness;
2, direction of improvement voltage: the AlInGaN material that quantum well stress release layer of the present invention adopts changes being with of HTMQW, certain barrier effect is played to the electronics being with active layer, the too much electronics of effective suppression enters p layer and non-radiative recombination occurs in hole, effective direction of improvement voltage VRD;
3, the even injection of electronics, the reparation that can be with reduce the operating voltage VF of device to a certain extent.
In general, this structure significantly improves large-sized chip brightness and direction voltage VRD, significantly promotes simultaneously and reduces operating voltage.Experiment conclusion display from embodiment provides: under 28*28 size, after HTMQW uses AlInGaN material to replace InGaN material, brightness rises to 200 ~ 210mw from 185 ~ 200mw, and VRD rises to 30 ~ 40V from 20 ~ 25V, and voltage is reduced to 3.25 ~ 3.35V from 3.4 ~ 3.5V.
Except object described above, feature and advantage, the present invention also has other object, feature and advantage.Below with reference to figure, the present invention is further detailed explanation.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the structural representation of comparative example of the present invention;
Fig. 2 is the HTMQW energy band diagram of comparative example of the present invention;
Fig. 3 is the structural representation of the embodiment of the present invention;
Fig. 4 is the HTMQW energy band diagram of the embodiment of the present invention;
Fig. 5 is the brightness contrast figure of sample 1 and sample 2;
Fig. 6 is the VRD comparison diagram of sample 1 and sample 2;
Fig. 7 is the VF comparison diagram of sample 1 and sample 2;
Wherein, 1, Sapphire Substrate, 2, GaN nucleating layer, 3, undoped uGaN resilient coating, 4, nGaN layer, 5, mix indium HT-MQW layer, 6, mix indium well layer, 7, P type AlGaN layer, 8, P type GaN layer, 9, InGaN layer, 10 the HTMQW layer of In and Al, is mixed.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are described in detail, but the multitude of different ways that the present invention can limit according to claim and cover is implemented.
The invention provides a kind of growing method of epitaxial structure quantum well stress release layer, comprise process substrate, low temperature growth buffer GaN layer successively, grow the GaN layer that undopes, grow GaN layer, growth active layer MQW, growing P-type AlGaN layer, growth P-type GaN layer, the growing InGaN layer step of mixing Si, mix between SiGaN layer step and growth active layer MQW step in growth, comprise grown quantum trap stress release layer steps A:
In temperature be 750-800 DEG C, 300mbar reative cell in, pass into trimethyl indium, trimethyl gallium, triethyl-gallium and trimethyl aluminium, generate the GaN layer of 40nm thickness and the Al of 2nm thickness
yin
xga
(1-x-y)n layer, wherein x=0.05-0.08, y=0.02-0.05, gross thickness is 160nm.
The quantum well stress release layer of the present invention's growth have employed AlInGaN material, stops and is with the electronics of active layer, reduces electronics and enters the probability that non-radiative recombination occurs for p layer and hole, large size chip brightness and direction voltage are got a promotion.
The comparative example one adopting and to prepare sample 1 with existing conventional method is below described respectively, and adopts growing method of the present invention to prepare the embodiment one of sample 2, then two kinds of methods are obtained sample 1 and sample 2 and carry out Performance Detection and compare.
Comparative example one,
1, in the reative cell of 800-1000 DEG C, 300mbar, the hydrogen of 33000sccm is passed into, high-temperature process Sapphire Substrate 5-6 minute;
2, at being cooled to 500-550 DEG C, growth thickness is the low temperature buffer layer GaN layer (Nucleation) of 30-40nm on a sapphire substrate;
3, at increasing the temperature to 1000-1100 DEG C, continued propagation thickness is the GaN layer that undopes (uGaN) of 1-2.5 μm;
4, continued propagation thickness is the GaN layer (nGaN) that the N-shaped of 2-4 μm mixes Si again;
5, temperature drops to 800 DEG C, pass into the trimethyl indium of 800sccm, the trimethyl gallium of 100sccm, the triethyl-gallium of 120sccm, continued propagation thickness is the HTMQW (hightemperaturemultiplequantumwell mixing In of 160nm, high temperature multi layer quantum well), thickness is 40nmGaN/2nmInxGa
(1-x)n layer, x=0.05-0.08,4 cycle alternating growths;
The thickness of 6, cyclical growth active layer MQW, low temperature 750 DEG C of grow doping In is the In of 3nm
xga
(1-x)n (x=0.20-0.21) layer, high temperature 840 DEG C of growth thickness are the GaN layer of 12nm, In
xga
(1-x)n/GaN periodicity is 15;
7, the P type AlGaN layer that 930-950 DEG C of continued propagation thickness is 20-30nm is increased the temperature to again;
8, the P type GaN layer (PGaN) of mixing magnesium that 950-980 DEG C of continued propagation thickness is 0.15-0.20 μm is increased the temperature to again;
When 9, reducing the temperature to 650-680 DEG C again, growth thickness is that the low temperature of 5-10nm mixes magnesium InGaN layer;
10, reduce the temperature to 700-750 DEG C again, in a nitrogen atmosphere, duration 20-30 minute, activation PGaN, obtains sample 1.
The structure of sample 1 can be shown in Figure 1, and its energy band diagram as shown in Figure 2.Wherein, top curve is conduction band, A point represent the conduction band of HTMQW can be with poor; Lower curve is valence band, B point represent the valence band of HTMQW can be with poor; Lateral arrows indication is N layer injected electrons.The curve of back segment big rise and fall represents MQW, and the less curve of leading portion fluctuating represents HTMQW.
Embodiment one,
The present invention uses long high brightness GaN-based LED in AixtronCruisIMOCVD next life.Adopt high-purity H
2or high-purity N
2or high-purity H
2and high-purity N
2mist as carrier gas, high-purity N H
3as N source, metal organic source trimethyl gallium (TMGa), triethyl-gallium are as gallium (TEGa) source, and trimethyl indium (TMIn) is as indium source, and N-type dopant is silane (SiH
4), P-type dopant is two luxuriant magnesium (CP
2mg), substrate is (0001) surface sapphire, and reaction pressure is between 100mbar to 800mbar.Concrete growth pattern is as follows:
1, in the reative cell of 800-1000 DEG C, 300mbar, 33000sccm hydrogen is passed into, high-temperature process Sapphire Substrate 5-6 minute;
2, at being cooled to 500-550 DEG C, growth thickness is the low temperature buffer layer GaN (Nucleation) of 30-40nm on a sapphire substrate;
3, at increasing the temperature to 1000-1100 DEG C, continued propagation thickness is the GaN that undopes (uGaN) of 1-2.5 μm;
4, continued propagation thickness is the GaN (nGaN) that the N-shaped of 2-4 μm mixes Si again;
5, temperature drops to 750-800 DEG C, passes into the trimethyl indium of 800sccm, the trimethyl gallium of 100sccm, the triethyl-gallium of 120sccm and the trimethyl aluminium of 10sccm, and continued propagation thickness is the HTMQW mixing In and Al of 160nm, adopts 40nmGaN/2nmAl
yin
xga
(1-x-y)n (x=0.05-0.08, y=0.02-0.05) 4 cycle alternating growths;
The thickness of 6, cyclical growth active layer MQW, low temperature 750 DEG C of grow doping In is the In of 3nm
xga
(1-x)n (x ~=0.20-0.21) layer, high temperature 840 DEG C of growth thickness are the GaN layer of 12nm, In
xga
(1-x)n/GaN periodicity is 15;
7, the P type AlGaN layer that 930-950 DEG C of continued propagation thickness is 20-30nm is increased the temperature to again;
8, the P type GaN layer of mixing magnesium that 950-980 DEG C of continued propagation thickness is 0.15-0.20 μm is increased the temperature to again;
When 9, reducing the temperature to 650-680 DEG C again, growth thickness is that the low temperature of 5-10nm mixes magnesium InGaN layer;
10, reduce the temperature to 700-750 DEG C again, in a nitrogen atmosphere, duration 20-30 minute, activation PGaN, obtains sample 2.
The structure of sample 2 can be shown in Figure 3, and its energy band diagram as shown in Figure 4.Wherein, top curve is conduction band, C point represent the conduction band of HTMQW can be with poor; Lower curve is valence band, D point represent the valence band of HTMQW can be with poor; Lateral arrows indication is N layer injected electrons.The curve of back segment big rise and fall represents MQW, and the less curve of leading portion fluctuating represents HTMQW.
The Performance comparision of sample 1 and sample 2 can see table 1:
The chip statistical average contrast of table 1 liang sample HTMQW
| ID | LOP1 | VF1 | WD1 | VRD | HW | IR1 | BS | ESD2K |
| Sample 2 | 203.01 | 3.32 | 450.93 | 33.65 | 20.24 | 0.0101 | 1.89 | 84.84％ |
| Sample 1 | 193.29 | 3.44 | 451.07 | 22.59 | 19.24 | 0.0124 | 1.81 | 85.97％ |
Can see by table 1, the brightness (LOP1) of sample 2, reverse voltage (VRD), dominant wavelength half-wave wide (HW) and blue shift (BS) are all higher than sample 1, and main performance advantage is given prominence to; And voltage (VF1), dominant wavelength (WD1), electrical leakage (IR1), 2kv antistatic effect (ESD2K) are lower than sample 1, its security performance is higher.
Further, the brightness of sample 2 and sample 1, VRD, VF difference can be found out respectively from Fig. 5, Fig. 6 and Fig. 7, wherein, thick line representative sample 2 data, fine rule representative sample 1 data.In Fig. 5, along with granule number increases, sample 2 data and curves rises at 197-210mw, and sample 1 data and curves is between 185-200mw, and sample 2 brightness far wins sample 1.In Fig. 6, along with granule number increases, sample 2 data and curves rises at 30-40v, and sample 1 data and curves is between 20-25v, and the VRD of sample 2 far wins sample 1.In Fig. 7, along with granule number increases, sample 2 data and curves is at 3.25 ~ 3.35V, and sample 1 data and curves is at 3.4 ~ 3.5V, and the voltage of sample 2 compares sample 1, reduces many.
See Fig. 3, present invention also offers a kind of epitaxial structure, comprise the quantum well stress release layer that gross thickness is 160nm, described quantum well stress release layer is the HTMQW layer 10 mixing In and Al, comprises the GaN layer of 40nm thickness and the Al of 2nm thickness
yin
xga
(1-x-y)n layer, wherein x=0.05-0.08, y=0.02-0.05.The HTMQW layer 10 mixing In and Al instead of of the prior artly mixes indium HT-MQW layer 5.
Preferably, under described quantum well stress release layer 10, can comprise successively from top to bottom:
Sapphire Substrate 1;
GaN nucleating layer 2, thickness is 30-40nm;
Undoped uGaN resilient coating 3, thickness is 1-2.5 μm;
NGaN layer 4, thickness is 2-4 μm, mixes Si, and the doping content of Si is 5E18-2E19atom/cm
3.
Preferably, on described quantum well stress release layer, can comprise successively from top to bottom:
Mix indium well layer 6, comprise InGa
(1-x)n layer and GaN layer, wherein, In
xga
(1-x)the thickness of N layer is 3nm, doping In; The thickness of GaN layer is 12nm; Described In
xga
(1-x)the periodicity of N layer and described GaN layer overlap is 15;
P type AlGaN layer 7, thickness is 20-30nm;
P type GaN layer 8, thickness is 0.15-0.20 μm, mixes Mg, and the doping content of Mg is 1E19 ~ 1E20atom/cm
3;
InGaN layer 9, thickness is 5-10nm, mixes Mg, and the doping content of Mg is 1E20 ~ 1E21atom/cm
3.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the growing method of an epitaxial structure quantum well stress release layer, comprise process substrate, low temperature growth buffer GaN layer successively, grow the GaN layer that undopes, grow GaN layer, growth active layer MQW, growing P-type AlGaN layer, growth P-type GaN layer, the growing InGaN layer step of mixing Si, it is characterized in that
Mix between the GaN layer step of Si and growth active layer MQW step in growth, comprise grown quantum trap stress release layer steps A:
Insert high temperature quantum well layer between the n layer GaN grown on a sapphire substrate and luminescent layer MQW as stress release layer, high temperature quantum well is GaN and Al in 2 ~ 5 cycles
yin
xga
(1-x-y)n hetero structure layers, wherein the thickness of GaN is at 20 ~ 60nm, Al
yin
xga
(1-x-y)the thickness of N is at 1 ~ 5nm, x=0.05-0.08, y=0.02-0.05.
2. the growing method of a kind of epitaxial structure quantum well stress release layer according to claim 1, is characterized in that, comprise step before described steps A:
S1, process substrate: under the hydrogen atmosphere of 1000-1100 DEG C, process Sapphire Substrate 5-6 minute;
S2, low temperature growth buffer GaN layer: be cooled to 500-550 DEG C, growth thickness is the low temperature buffer GaN layer of 30-40nm on a sapphire substrate;
S3, growth undope GaN layer: be warming up to 1000-1100 DEG C, continued propagation thickness is the GaN layer that undopes of 1-2.5 μm;
The GaN layer of Si is mixed in S4, growth: continued propagation thickness is the GaN layer that the N-type of 2-4 μm mixes 16 ~ 32sccmSi, and the doping content of Si is 5E18-2E19atom/cm
3.
3. the growing method of a kind of epitaxial structure quantum well stress release layer according to claim 1, is characterized in that, comprise step after described steps A:
D1, cyclical growth active layer MQW: the thickness of low temperature 750 DEG C of grow doping 250 ~ 500sccmIn is the In of 3nm
xga
(1-x)n layer, wherein x=0.20-0.21, high temperature 840 DEG C of growth thickness are the GaN layer of 12nm, In
xga
(1-x)the periodicity of N/GaN layer is 15; The doping content of In is 1E19-1E20atom/cm
3;
D2, growing P-type AlGaN layer: increase the temperature to the P type AlGaN layer that 930-950 DEG C of continued propagation thickness is 20-30nm;
D3, growth P-type GaN layer: increase the temperature to the P type GaN layer of mixing 600 ~ 800sccmMg that 950-980 DEG C of continued propagation thickness is 0.15-0.20 μm; The doping content of Mg is 1E19 ~ 1E20atom/cm
3;
D4, growing InGaN layer: when reducing the temperature to 650-680 DEG C, growth thickness is the InGaN layer of mixing 1200 ~ 1800sccmMg of 5-10nm; The doping content of Mg is 1E20 ~ 1E21atom/cm
3;
D5, reduce the temperature to 700-750 DEG C, activate P type GaN layer in a nitrogen atmosphere, duration 20-30 minute.
4. an epitaxial structure, is characterized in that, comprises the quantum well stress release layer that gross thickness is 160nm, and described quantum well stress release layer is the high temperature multi layer quantum well stress release layer mixing In and Al, comprises the GaN layer of 40nm thickness and the Al of 2nm thickness
yin
xga
(1-x-y)n layer, wherein x=0.05-0.08, y=0.02-0.05.
5. a kind of epitaxial structure according to claim 4, is characterized in that, under described quantum well stress release layer, comprises successively from top to bottom:
GaN nucleating layer, thickness is 30-40nm;
Undoped GaN resilient coating, thickness is 1-2.5 μm;
N-type GaN layer, thickness is the doping content of 2-4 μm, Si is 5E18-2E19atom/cm
3.
6. a kind of epitaxial structure according to claim 4, is characterized in that, on described quantum well stress release layer, comprises successively from top to bottom:
Mix indium well layer, comprise In
xga
(1-x)n layer and GaN layer, wherein, In
xga
(1-x)the thickness of N layer is 3nm, and the doping content of doping In, In is 1E19-1E20atom/cm
3; The thickness of GaN layer is 12nm; Described In
xga
(1-x)the periodicity of N layer and described GaN layer overlap is 15;
P type AlGaN layer, thickness is 20-30nm;
P type GaN layer, thickness is the doping content of 0.15-0.20 μm, Mg is 1E19 ~ 1E20atom/cm
3;
InGaN layer, thickness is the doping content of 5-10nm, Mg is 1E20 ~ 1E21atom/cm
3.
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| CN108447952B (en) * | 2018-03-26 | 2020-04-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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| CN115986023B (en) * | 2022-11-29 | 2024-04-12 | 淮安澳洋顺昌光电技术有限公司 | Epitaxial wafer and light-emitting diode comprising epitaxial wafer |
| CN115832134B (en) * | 2023-02-08 | 2023-05-02 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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| CN103137807A (en) * | 2013-02-22 | 2013-06-05 | 中国科学院半导体研究所 | Green ray light-emitting diode (LED) epitaxial structure with stress relief layer and production method thereof |
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