CN103364590A - Sensor circuit and method for testing MEMS (micro electro mechanical system) sensor - Google Patents
Sensor circuit and method for testing MEMS (micro electro mechanical system) sensor Download PDFInfo
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- CN103364590A CN103364590A CN2013101188456A CN201310118845A CN103364590A CN 103364590 A CN103364590 A CN 103364590A CN 2013101188456 A CN2013101188456 A CN 2013101188456A CN 201310118845 A CN201310118845 A CN 201310118845A CN 103364590 A CN103364590 A CN 103364590A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2605—Measuring capacitance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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Abstract
The application relates to a sensor circuit and a method for testing an MEMS (micro electro mechanical system) sensor. The sensor circuit comprises an MEMS sensor and an integrated circuit (IC). The MEMS sensor includes a first capacitance element and a second capacitance element. The IC includes a switching network circuit and a capacitance measuring circuit. The switching network circuit is configured to electrically decouple the first capacitance element of the MEMS sensor with a first input end of the IC, and to electrically couple the second capacitance element to a second input end of the IC. The capacitance measuring circuit is configured to measure the capacitance of the second capacitance element of the MEMS sensor during a period when a first electrical signal is applied to the decoupled first capacitance element.
Description
Technical field
Generally speaking, the application relates to electronic circuit, more specifically, relates to the MEMS sensor circuit.
Background technology
MEMS (micro electro mechanical system) (MEMS) comprises the small mechanical equipment of carrying out electric power and mechanical function, and this plant equipment is used with the photoetching process of making the employed resemble process of integrated circuit and is made.Some MEMS equipment is the sensor that can detect motion, such as accelerometer, or can detect the sensor of angular velocity, such as gyroscope.Accelerometer is in response to and acts on from it acceleration and experience the equipment of measurable variation.The MEMS accelerometer can comprise piezoelectric type, pressure resistance type and capacitive accelerometer.Capacitive accelerometer experiences the variation of electric capacity in response to acceleration.The production of MEMS accelerometer comprises test, any defective in the equipment that this test should fast detecting goes out to process.
Summary of the invention
Except other aspects, the application has also discussed equipment, the system and method for testing for to the MEMS sensor.A kind of example apparatus comprises MEMS sensor and integrated circuit (IC), and described MEMS sensor comprises the first capacity cell and the second capacity cell.Described IC comprises switching network circuit and capacitance measurement circuit.Described switching network Circnit Layout becomes described first capacity cell of described MEMS sensor and the first input end electrolysis coupling of described IC, and described the second capacity cell is electrically coupled to the second input end of described IC.Described capacitance measurement circuit can be configured to measure the electric capacity of described second capacity cell of described MEMS sensor during applying the first electric signal to this first capacity cell by decoupling zero.
A kind of exemplary method that the MEMS sensor is tested comprises: with the first capacity cell and the IC electrolysis coupling of MEMS sensor; Apply the first electric signal to this capacity cell by decoupling zero; And the electric capacity of during applying described the first electric signal, measuring the second capacity cell of described MEMS sensor.
Summary of the invention partly aims to provide the general introduction to subject of this patent application, is not exclusiveness or the exhaustive explanation that aims to provide the application.This paper comprises that embodiment is to provide the further information relevant with present patent application.
Description of drawings
In the accompanying drawing (these accompanying drawings not necessarily are drawn to scale), identical numeral can be described the similar parts in the different views.Unrestriced mode briefly shows each embodiment that discusses among the application to accompanying drawing by example.
Fig. 1 shows the block scheme of the part of exemplary MEMS sensor and integrated circuit;
Fig. 2 shows the process flow diagram of the illustrative methods of the self-test that realizes the MEMS sensor;
Fig. 3 shows an exemplary circuit of test MEMS sensor;
Fig. 4 shows another exemplary circuit of test MEMS sensor;
Fig. 5 has been shown in further detail the figure of exemplary test circuit.
Embodiment
Fig. 1 shows exemplary MEMS sensor 105 and is used for the block scheme of part of integrated circuit (IC) 110 of monitoring sensor exporting change.This MEMS sensor 105 can be capacitive accelerometer, and wherein this IC monitors the variation that the electric capacity of this sensor occurs in response to acting on the acceleration on this sensor.
Typical MEMS capacitive accelerometer comprises removable detection mass (proof mass), and this removable detection mass has by mechanical type suspension (mechanical suspension) and is attached to capacity cell on the reference frame (reference frame).Two capacity cells shown in Figure 1 are circuit capacitor, are labeled as respectively CaP and CaN.Actual capacity cell can by electric coupling (such as, in parallel) a plurality of plates form, to produce capacitor CaP or the such total capacitance of CaN as shown in fig. 1.As shown in Figure 1, capacitor consists of the bridge from two output terminals of MEMS sensor 105 to public circuit node 115, and public circuit node 115 can represent that the circuit of removable detection mass connects.A plate or one group of plate of each capacitor can be attached to this removable detection mass, and another plate or another group plate are fixed.
Be applied to the movement that acceleration on the MEMS accelerometer causes detecting mass.The displacement of this detection mass has changed the interval between the plate of capacitor.The capacitance difference that produces between this displacement cardinal principle and described two capacity cells is proportional.Should detect mass and mechanical type suspension is modeled as spring but acceleration is determined by displacement according to law recklessly.
In general, the right capacitance variations of capacitor is relevant with the acceleration on the direction.Increase perpendicular to this first capacitor to another capacitor of arranging to determining the acceleration on the second direction, these two capacitors are to can be used as dual axis accelerometer.Three capacitors are to being three axles or the consideration of three-dimensional (3D) accelerometer.
For accelerometer is tested, can utilize the capacitive MEMS sensor also to can be used as this advantage of actuator.Typically, add capacitor and to the MEMS sensor that under test pattern, uses, detect mass to increase electrostatic charge and to drive.This test mode need to be made extra capacitor and extra electrical contact at the MEMS sensor.Better method is to use sensing capacitance element itself in test.Like this, simplified the design of MEMS sensor owing to the parts that do not need to be exclusively used in test.
Fig. 2 is the process flow diagram of the illustrative methods 200 of the self-test of realization MEMS capacitance type sensor.Under normal mode of operation, as shown in Figure 1, the MEMS sensor is electrically coupled to IC (for example special IC or ASIC).Under the normal mode, this IC measures the electric capacity of the output of this MEMS sensor.At frame 205 places, under test pattern, with the first capacity cell and this IC electrolysis coupling of this MEMS sensor.At frame 210 places, the first electric signal is applied to by on the capacity cell of decoupling zero.Apply this first electric signal and can cause detecting the electric capacity that mass moved and changed the second capacity cell, measure the electric capacity of the second capacity cell at frame 215 places.Similarly, can measure the first capacity cell.
Get back to Fig. 1, IC110 comprises switching network circuit 120.This switching network circuit 120 can be worked under normal mode and test pattern.Under normal mode of operation, this switching network can be coupled into first and second capacity cells (for example CaP and CaN) of MEMS sensor 105 capacity cell pair.This capacity cell is to changing electric capacity in response to acceleration, thereby forms acceleration-capacitive transducer.
Under the test pattern, switching network circuit 120 can with the first capacity cell of MEMS sensor 105 and the first input end electrolysis coupling of IC, be electrically coupled to the second capacity cell the second input end of IC110.This IC110 also comprises capacitance measurement circuit 125, and this capacitance measurement circuit 125 is measured the electric capacity of the second capacity cell of this MEMS sensor during applying the first electric signal to this first capacity cell by decoupling zero.
Fig. 3 is the diagram of this method of testing.For capacitor CaN is tested, the capacitor CaP of MEMS sensor 305 and the circuit electricity of IC310 are disconnected or the electricity isolation.Locate to acquire the outside electrical connection that detects mass at the circuit node 315 (being labeled as node A) that these two capacitors share.Electric signal is applied to by the lead-in wire (being labeled as Node B) of the capacitor CaP of decoupling zero.Can or out of phase drive Node B to test this sensor with node A homophase.In anti-phase situation, this detects mass by the variation of static tractive with the imitation accelerating force.Then, can when driving Node B, measure the electric capacity of CaN.Capacity cell changed when this susceptible of proof moved when the detection mass.When driven in phase node A and Node B, the very little or variation of susceptible of proof capacitance variations.
Can measure in a similar manner capacitor CaP, as shown in Figure 4.For test capacitors element CaP, the switching network circuit is capacitor CaN and the IC410 electrolysis coupling of MEMS sensor 405, and capacitor CaP is electrically coupled to IC410.Electric signal is applied to by the lead-in wire (being labeled as Node B) of the capacitor CaN of decoupling zero.Can or out of phase drive Node B to test this sensor with node A homophase.If this MEMS sensor is multidimensional sensor, this test can be for a plurality of capacity cells to carrying out repeatedly so.
According to some examples, being used for driving by the electric signal of the capacitor of decoupling zero is square wave.Get back to Fig. 1, but use test circuit 130 the first square wave is applied to by the first capacity cell of decoupling zero (such as the CaP among Fig. 3), and the second square-wave signal is applied to external circuit node (such as the circuit node 315 among Fig. 3).This external circuit node is shared by the first capacity cell and the second capacity cell, and can be electrically coupled to the detection mass.
According to some examples, capacitance measurement circuit 125 comprises difference input analog-to-digital converter (ADC) circuit, and this adc circuit is configured to produce the digital value of the electric capacity that represents measured capacity cell (for example CaP or CaN).In some examples, capacitance measurement circuit 125 comprises difference input ∑-Δ adc circuit.
Fig. 5 is the synoptic diagram of test circuit among Fig. 4, shows the more detailed example that how capacity cell of MEMS sensor is connected to ∑-Δ adc circuit 525.Shown in this example comprise capacitor and First-order Integral device.In some examples, this integrator can be the integrator of high-order more.The output terminal of ∑-Δ adc circuit 525 produces the count value of the electric capacity that represents this MEMS sensor.Like this, the capacity cell of this MEMS sensor forms the capacitance-voltage sensor circuit with ∑-Δ ADC.Digital low-pass filtering circuit 135 can be followed in the output terminal back of described ∑-Δ adc circuit.In the example of Fig. 5, the output terminal of ∑-Δ adc circuit 525 is for generation of count value, and this count value represents the electric capacity of CaP when the switching network circuit is worked under test pattern.
IC can comprise the self-test capacitor that is comprised of CstP and CstN pair.In some examples, this capacitor has identical capacitance.If the first capacity cell of this MEMS sensor and this IC electrolysis coupling, then this switching network circuit can be electrically coupled to the second capacity cell of this MEMS sensor the first input end of this adc circuit, and via this self-test capacitor to being electrically coupled to the second input end of this adc circuit.Like this, this switching network circuit is with the part of this self-test capacitor to the capacitance-voltage sensor that is configured to described IC.
In some instances, this IC comprises at least one compensation condenser (for example CofP and/or CofN) for any common mode skew of eliminating this adc circuit.If the first capacity cell of this MEMS sensor and this IC electrolysis coupling, then this switching network circuit can be electrically coupled to the first input end that this difference is inputted adc circuit with this second capacity cell and this compensation condenser during measuring the second capacity cell.In the example of Fig. 5, this MEMS capacitor (CaP) and this compensation condenser (CofP) form the part of capacitor-voltage sensor, the input end of merged this adc circuit of formation of this capacitor-voltage sensor.
Note that the capacity cell that only has for the MEMS sensor of acceleration measurement just uses in test, this MEMS sensor does not need extra test capacitors.This just so that this MEMS sensor needs circuit block and circuit junction still less, has simplified design.
Complementary annotations ﹠ example
Example 1 can comprise or use theme (for example a kind of device), this theme comprises MEMS (micro electro mechanical system) (MEMS) sensor and IC, this MEMS sensor comprises the first capacity cell and the second capacity cell, this IC comprises switching network circuit and capacitance measurement circuit, this switching network Circnit Layout becomes with the first input end electrolysis coupling of described first capacity cell of described MEMS sensor and described IC and with described the second capacity cell to be electrically coupled to the second input end of described IC, and this capacitance measurement circuit is configured to the electric capacity at described second capacity cell of the described MEMS sensor of measurement during applied the first electric signal by the first capacity cell of decoupling zero.
In the example 2, example 1 described theme comprises switching network alternatively, and this switching network is configured to described second capacity cell of described MEMS sensor and described IC electrolysis coupling, and described the first capacity cell is electrically coupled to described IC.Described capacitance measurement circuit is configured to alternatively at the electric capacity of measuring described first capacity cell of described MEMS sensor during applied the second electric signal by the second capacity cell of decoupling zero.
In the example 3, the described theme of any one of example 1-2 or combination in any comprises test circuit alternatively, this test circuit is configured to: apply the first square-wave signal to described the first capacity cell by decoupling zero, apply the second square-wave signal to described the first capacity cell and the shared external circuit node of described the second capacity cell.The phase place of described the second square-wave signal alternatively with the single spin-echo of described the first square-wave signal, and described capacitance measurement circuit is configured to measure the electric capacity of described the second capacity cell alternatively during applying described the first square-wave signal and described the second square-wave signal.
In the example 4, example 1 and 2 any one or the described theme of combination in any comprise test circuit alternatively, this test circuit is configured to: apply the first square-wave signal to described the first capacity cell by decoupling zero, and apply the second square-wave signal to the external node that is shared by described the first capacity cell and described the second capacity cell.Described the second square-wave signal and described the first square-wave signal homophase, and described capacitance measurement circuit is configured to measure described electric capacity during applying described the first square-wave signal and described the second square-wave signal.
In the example 5, the described theme of any one of example 1-4 or combination in any comprises capacitance measurement circuit alternatively, this capacitance measurement circuit comprises difference input analog-to-digital converter (ADC) circuit, and this adc circuit is configured to produce the digital value of the electric capacity that represents described the second capacity cell.
In the example 6, example 5 described themes comprise having the right IC of self-test capacitor alternatively.Described switching network circuit is configured to alternatively: the first input end that described second capacity cell of described MEMS sensor is electrically coupled to described adc circuit, and with described self-test capacitor to being configured to the capacitance-voltage sensor of described IC inside, and with described self-test capacitor to being electrically coupled to the second input end of described adc circuit.
In the example 7, the described theme of any one of example 5-6 or combination in any comprises IC alternatively, and this IC comprises at least one compensation condenser of any common mode skew that is configured to eliminate described adc circuit.Described switching network circuit is configured to during measuring described the second capacity cell described the second capacity cell and described compensation condenser are electrically coupled to the described first input end that described difference is inputted adc circuit alternatively.
In the example 8, the described theme of any one of example 5-7 or combination in any comprises difference input ∑-Δ adc circuit alternatively.
In the example 9, the described theme of any one of example 1-8 or combination in any comprises the switching network circuit alternatively, and this switching network circuit is configured to work under test pattern and normal mode alternatively.Under described test pattern, described switching network is configured to alternatively with at least one and described IC electrolysis coupling in described the first capacity cell and described the second capacity cell, under described normal mode, described switching network circuit is configured to described first capacity cell of described MEMS sensor and described the second capacity cell are coupled as the first capacity cell pair alternatively.Described the first capacity cell changes electric capacity to being configured to alternatively in response to the acceleration on the first direction.
In the example 10, the described theme of any one of example 1-9 or combination in any comprises the capacitance-voltage sensor circuit alternatively.
In the example 11, the described theme of any one of example 1-10 or combination in any comprises the MEMS sensor alternatively, and this MEMS sensor comprises accelerometer.
Example 12 can comprise following theme (a kind of device for apply behavior for example, method, perhaps comprise the machine readable media that when being carried out by machine, makes the instruction of this machine apply behavior), or combine to comprise following theme with any one or the combination in any of example 1-11 alternatively, this theme comprises: with the first capacity cell and the IC electrolysis coupling of MEMS sensor, apply the first electric signal to this capacity cell by decoupling zero, and the electric capacity of during applying described the first electric signal, measuring the second capacity cell of described MEMS sensor.This theme can comprise the device of decoupling zero the first capacity cell, and its illustrated examples can comprise one or more on-off circuits or switching network.This theme can comprise the first electric signal is applied to by the device of the capacity cell of decoupling zero that its illustrated examples can comprise test circuit.This theme can be included in the device of the electric capacity that applies the second capacity cell of measuring described MEMS sensor during described the first electric signal, and its illustrated examples can comprise capacitance measurement circuit, adc circuit, difference adc circuit and difference ∑-Δ adc circuit.
In the example 13, example 12 described themes comprise alternatively: with described the second capacity cell and the described IC electrolysis coupling of described MEMS sensor; Apply the second electric signal to described the second capacity cell; And the electric capacity of during applying described the second electric signal, measuring described first capacity cell of described MEMS sensor.
In the example 14, example 12 and 13 any one or the described theme of combination in any comprise alternatively: the first square-wave signal is applied to described the first capacity cell; The second square-wave signal is applied to described the first capacity cell and the shared external node of described the second capacity cell, the single spin-echo of the phase place of described the second square-wave signal and described the first square-wave signal; During applying described the first square-wave signal and described the second square-wave signal, measure the electric capacity of described the second capacity cell.
In the example 15, example 12 and 13 any one or the described theme of combination in any comprise alternatively: the first square-wave signal is applied to described the first capacity cell; The second square-wave signal is applied to described the first capacity cell and the shared external node of described the second capacity cell, wherein, described the second square-wave signal and described the first square-wave signal homophase; During applying described the first square-wave signal and described the second square-wave signal, measure the electric capacity of described the second capacity cell.
In the example 16, the described theme of any one of example 12-15 or combination in any comprises alternatively: utilize difference input ∑-Δ analog to digital converter (ADC) circuit to produce the digital value of the electric capacity of described the second capacity cell of representative.
In the example 17, example 16 described themes comprise alternatively: the first input end that described the second capacity cell is electrically coupled to difference input adc circuit; And with the self-test capacitor of described IC inside to being electrically coupled to the second input end of described adc circuit, wherein said self-test capacitor is to forming the electric charge-voltage sensor of described IC inside.
In the example 18, the described theme of any one of example 12-17 or combination in any is measured described the first capacity cell and described the second capacity cell during being included in alternatively test pattern, wherein, under normal mode of operation, described the first capacity cell and described the second capacity cell comprise the first capacity cell pair, and are configured to change electric capacity in response to the acceleration on the first direction.
In the example 19, the described theme of any one of example 12-18 or combination in any comprises alternatively: under described normal mode of operation, eliminate any common mode voltage with at least one compensation condenser; And during described test pattern, when measuring described the second capacity cell, described compensation condenser and described the second capacity cell are electrically coupled to the described first input end that described difference is inputted adc circuit.
In the example 20, the described theme of any one of example 12-19 or combination in any comprises alternatively: the electric capacity of the second capacity cell of acceleration measurement-electric capacity MEMS sensor.
Example 21 can comprise following theme, or alternatively with example 1-20 in any one or arbitrary part of a plurality of examples or the combination of a plurality of arbitrary portions combine to comprise following theme, this theme can comprise: be used for to carry out the device of any one or several functions of the function of example 1-20, or comprise the machine readable media of the instruction of any one or several functions in the function that makes machine execution example 1-20 when carried out by machine.
In these non-limiting examples each can be independently, also can make up side by side or with other examples in one or more combining.
Above-mentioned detail specifications is with reference to accompanying drawing, and accompanying drawing also is the part of described detail specifications.Accompanying drawing has shown the concrete example that can use the application in graphic mode.These embodiment are known as " example " in this application.Related all publications, patent and the patent document of the application be all as the application's reference content, although they are respectively in addition references.If there is purposes difference between the application and the reference paper, then regard the application's the replenishing of purposes as with reference to the purposes of file, if there is implacable difference between the two, then the purposes with the application is as the criterion.
In this application, normally used the same with patent document, term " " or " a certain " expression comprises one or more, but other situations or when using " at least one " or " one or more " should except.In this application, except as otherwise noted, otherwise use the term "or" refer to without exclusiveness or, so that " A or B " comprising: " A but be not B ", " B but be not A " and " A and B ".In claims, term " comprises " and " therein " is equal to that each term " comprises " and the popular English of " wherein ".Equally, in appended claims, term " comprises " and " comprising " is open, namely, system, equipment, article or step comprise parts those listed after in claim this term parts, still are considered as dropping within the scope of this claim.And in the claim below, term " first ", " second " and " the 3rd " etc. as label, are not that object is had quantitative requirement only.
The effect of above-mentioned explanation is to explain orally and unrestricted.Above-described embodiment (or one or more aspects of embodiment) can be combined with.Can on the basis of understanding above-mentioned instructions, utilize certain routine techniques of prior art to carry out other examples.The regulation of abideing by 37C.FR. § 1.72 (b) provides summary, allows the reader to determine fast the disclosed character of present technique.Should be understood that when submitting this summary to that this summary is not used in scope or the meaning of explaining or limiting claim.Equally, in the superincumbent embodiment, various features can be classified into rationalizes the disclosure.This open feature that does not should be understood to failed call is essential to any claim.On the contrary, the application's theme can be that feature is less than all features of specific disclosed example.Therefore, following claim is incorporated in the embodiment accordingly, and each claim is all as an independent example.Should be referring to appended claim, and all scopes of the equivalent enjoyed of these claims, determine the application's scope.
Claims (20)
1. sensor circuit comprises:
MEMS (micro electro mechanical system) (MEMS) sensor comprises the first capacity cell and the second capacity cell; And
IC comprises:
The switching network circuit is configured to described first capacity cell of described MEMS sensor and the first input end electrolysis coupling of described IC, and described the second capacity cell is electrically coupled to the second input end of described IC; And
Capacitance measurement circuit is configured at the electric capacity of measuring described second capacity cell of described MEMS sensor during applied the first electric signal by the first capacity cell of decoupling zero.
2. sensor circuit as claimed in claim 1,
Wherein, described switching network is configured to described second capacity cell of described MEMS sensor and described IC electrolysis coupling, and described the first capacity cell is electrically coupled to described IC; And
Wherein, described capacitance measurement circuit is configured at the electric capacity of measuring described first capacity cell of described MEMS sensor during applied the second electric signal by the second capacity cell of decoupling zero.
3. sensor circuit as claimed in claim 1 comprises test circuit, and this test circuit is configured to:
Apply the first square-wave signal to described the first capacity cell by decoupling zero;
Apply the second square-wave signal to described the first capacity cell and the shared external circuit node of described the second capacity cell, the single spin-echo of the phase place of wherein said the second square-wave signal and described the first square-wave signal, and
Wherein said capacitance measurement circuit is configured to measure the electric capacity of described the second capacity cell during applying described the first square-wave signal and described the second square-wave signal.
4. sensor circuit as claimed in claim 1 comprises test circuit, and this test circuit is configured to:
Apply the first square-wave signal to described the first capacity cell by decoupling zero; And
Apply the second square-wave signal to the external node that is shared by described the first capacity cell and described the second capacity cell,
Wherein said the second square-wave signal and described the first square-wave signal homophase, and
Wherein said capacitance measurement circuit is configured to measure described electric capacity during applying described the first square-wave signal and described the second square-wave signal.
5. sensor circuit as claimed in claim 1, wherein, described capacitance measurement circuit comprises difference input analog-to-digital converter (ADC) circuit, this adc circuit is configured to produce the digital value of the electric capacity of described the second capacity cell of representative.
6. sensor circuit as claimed in claim 5,
Wherein, described IC comprises self-test capacitor pair,
Wherein, described switching network Circnit Layout becomes:
Described second capacity cell of described MEMS sensor is electrically coupled to the first input end of described adc circuit; And
With described self-test capacitor to being configured to the capacitance-voltage sensor of described IC inside, and with described self-test capacitor to being electrically coupled to the second input end of described adc circuit.
7. sensor circuit as claimed in claim 5,
Wherein, described IC comprises at least one compensation condenser of any common mode skew that is configured to eliminate described adc circuit;
Wherein, described switching network Circnit Layout one-tenth is electrically coupled to the described first input end that described difference is inputted adc circuit with described the second capacity cell and described compensation condenser during measuring described the second capacity cell.
8. sensor circuit as claimed in claim 5, wherein, described adc circuit is difference input ∑-Δ adc circuit.
9. sensor circuit as claimed in claim 1,
Wherein, described switching network Circnit Layout becomes to work under test pattern and normal mode,
Wherein, under described test pattern, described switching network is configured at least one and described IC electrolysis coupling in described the first capacity cell and described the second capacity cell,
Wherein, under described normal mode, described switching network Circnit Layout becomes described first capacity cell of described MEMS sensor and described the second capacity cell is coupled as the first capacity cell pair, and
Wherein, described the first capacity cell changes electric capacity to being configured in response to the acceleration on the first direction.
10. sensor circuit as claimed in claim 1, wherein, described IC comprises the capacitance-voltage sensor circuit.
11. sensor circuit as claimed in claim 1, wherein, described MEMS sensor comprises accelerometer.
12. the method that MEMS (micro electro mechanical system) (MEMS) sensor is tested, the method comprises:
The first capacity cell and IC electrolysis coupling with described MEMS sensor;
Apply the first electric signal to this capacity cell by decoupling zero; And
During applying described the first electric signal, measure the electric capacity of the second capacity cell of described MEMS sensor.
13. method as claimed in claim 12 comprises:
Described the second capacity cell and described IC electrolysis coupling with described MEMS sensor;
Apply the second electric signal to described the second capacity cell; And
During applying described the second electric signal, measure the electric capacity of described first capacity cell of described MEMS sensor.
14. method as claimed in claim 13,
Wherein, applying the first electric signal comprises: the first square-wave signal is applied to described the first capacity cell;
Wherein, the electric capacity of measuring described the second capacity cell comprises: the second square-wave signal is applied to the external node that described the first capacity cell and described the second capacity cell share;
Wherein, the electric capacity of described the second capacity cell is measured during applying described the first square-wave signal and described the second square-wave signal; And
Wherein, the single spin-echo of the phase place of described the second square-wave signal and described the first square-wave signal.
15. method as claimed in claim 13,
Wherein, applying the first electric signal comprises: the first square-wave signal is applied to described the first capacity cell;
Wherein, the electric capacity of measuring described the second capacity cell comprises: the second square-wave signal is applied to the external node that described the first capacity cell and described the second capacity cell share;
Wherein, the electric capacity of described the second capacity cell is measured during applying described the first square-wave signal and described the second square-wave signal; And
Wherein, described the second square-wave signal and described the first square-wave signal homophase.
16. method as claimed in claim 12, wherein, the electric capacity of measuring described the second capacity cell comprises: utilize difference input ∑-Δ analog to digital converter (ADC) circuit to produce the digital value of the electric capacity of described the second capacity cell of representative.
17. method as claimed in claim 12, wherein, the electric capacity of measuring described the second capacity cell comprises:
Described the second capacity cell is electrically coupled to the first input end of difference input adc circuit; And
To being electrically coupled to the second input end of described adc circuit, wherein said self-test capacitor is to forming the electric charge-voltage sensor of described IC inside with the self-test capacitor of described IC inside.
18. method as claimed in claim 12,
Wherein, described the first capacity cell and described the second capacity cell are measured during test pattern; And
Wherein, under normal mode of operation, described the first capacity cell and described the second capacity cell comprise the first capacity cell pair, and are configured to change electric capacity in response to the acceleration on the first direction.
19. method as claimed in claim 18,
Wherein, under described normal mode of operation, eliminate any common mode voltage with at least one compensation condenser, and
Wherein, during described test pattern, during measuring described the second capacity cell, described compensation condenser and described the second capacity cell are electrically coupled to the described first input end of described difference input adc circuit.
20. method as claimed in claim 12, wherein, the electric capacity of measuring the second capacity cell of described MEMS sensor comprises: the electric capacity of the second capacity cell of acceleration measurement-electric capacity MEMS sensor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261620153P | 2012-04-04 | 2012-04-04 | |
| US61/620,153 | 2012-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103364590A true CN103364590A (en) | 2013-10-23 |
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| CN201310118845.6A Active CN103364590B (en) | 2012-04-04 | 2013-04-08 | Sensor circuit and the method that MEMS sensor is tested |
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Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8710599B2 (en) | 2009-08-04 | 2014-04-29 | Fairchild Semiconductor Corporation | Micromachined devices and fabricating the same |
| US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
| US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
| US9006846B2 (en) | 2010-09-20 | 2015-04-14 | Fairchild Semiconductor Corporation | Through silicon via with reduced shunt capacitance |
| US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
| US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
| US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
| US9095072B2 (en) | 2010-09-18 | 2015-07-28 | Fairchild Semiconductor Corporation | Multi-die MEMS package |
| US9156673B2 (en) | 2010-09-18 | 2015-10-13 | Fairchild Semiconductor Corporation | Packaging to reduce stress on microelectromechanical systems |
| US9246018B2 (en) | 2010-09-18 | 2016-01-26 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
| US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
| US9352961B2 (en) | 2010-09-18 | 2016-05-31 | Fairchild Semiconductor Corporation | Flexure bearing to reduce quadrature for resonating micromachined devices |
| US9425328B2 (en) | 2012-09-12 | 2016-08-23 | Fairchild Semiconductor Corporation | Through silicon via including multi-material fill |
| US9444404B2 (en) | 2012-04-05 | 2016-09-13 | Fairchild Semiconductor Corporation | MEMS device front-end charge amplifier |
| US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
| CN106105264A (en) * | 2014-03-14 | 2016-11-09 | 罗伯特·博世有限公司 | Integrated self-test for dynamo-electric capacitance type sensor |
| CN106324283A (en) * | 2015-06-30 | 2017-01-11 | 飞思卡尔半导体公司 | MEMS sensor devices having a self-test mode |
| US9618361B2 (en) | 2012-04-05 | 2017-04-11 | Fairchild Semiconductor Corporation | MEMS device automatic-gain control loop for mechanical amplitude drive |
| US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
| US10060757B2 (en) | 2012-04-05 | 2018-08-28 | Fairchild Semiconductor Corporation | MEMS device quadrature shift cancellation |
| US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102034604B1 (en) * | 2012-04-04 | 2019-10-21 | 페어차일드 세미컨덕터 코포레이션 | Self test of mems accelerometer with asics integrated capacitors |
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- 2013-04-08 CN CN2013201716166U patent/CN203275442U/en not_active Withdrawn - After Issue
- 2013-04-08 CN CN201310118845.6A patent/CN103364590B/en active Active
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| US5751154A (en) * | 1996-03-19 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | capacitive sensor interface circuit |
| JP2009075097A (en) * | 2007-08-30 | 2009-04-09 | Denso Corp | Capacitive physical quantity detector |
| CN203275442U (en) * | 2012-04-04 | 2013-11-06 | 快捷半导体(苏州)有限公司 | Sensor circuit |
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| US8710599B2 (en) | 2009-08-04 | 2014-04-29 | Fairchild Semiconductor Corporation | Micromachined devices and fabricating the same |
| US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
| US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
| US10050155B2 (en) | 2010-09-18 | 2018-08-14 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
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| US9095072B2 (en) | 2010-09-18 | 2015-07-28 | Fairchild Semiconductor Corporation | Multi-die MEMS package |
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| US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
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| US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
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| US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
| US9444404B2 (en) | 2012-04-05 | 2016-09-13 | Fairchild Semiconductor Corporation | MEMS device front-end charge amplifier |
| US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
| US10060757B2 (en) | 2012-04-05 | 2018-08-28 | Fairchild Semiconductor Corporation | MEMS device quadrature shift cancellation |
| US9618361B2 (en) | 2012-04-05 | 2017-04-11 | Fairchild Semiconductor Corporation | MEMS device automatic-gain control loop for mechanical amplitude drive |
| US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
| US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
| US9802814B2 (en) | 2012-09-12 | 2017-10-31 | Fairchild Semiconductor Corporation | Through silicon via including multi-material fill |
| US9425328B2 (en) | 2012-09-12 | 2016-08-23 | Fairchild Semiconductor Corporation | Through silicon via including multi-material fill |
| CN106105264A (en) * | 2014-03-14 | 2016-11-09 | 罗伯特·博世有限公司 | Integrated self-test for dynamo-electric capacitance type sensor |
| CN106324283A (en) * | 2015-06-30 | 2017-01-11 | 飞思卡尔半导体公司 | MEMS sensor devices having a self-test mode |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130112804A (en) | 2013-10-14 |
| CN103364590B (en) | 2015-11-18 |
| KR102034604B1 (en) | 2019-10-21 |
| CN203275442U (en) | 2013-11-06 |
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