CN103311132B - Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame - Google Patents
Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame Download PDFInfo
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- CN103311132B CN103311132B CN201310188048.5A CN201310188048A CN103311132B CN 103311132 B CN103311132 B CN 103311132B CN 201310188048 A CN201310188048 A CN 201310188048A CN 103311132 B CN103311132 B CN 103311132B
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Abstract
The present invention relates to a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame, said method comprising the steps of: get metal substrate; Metallic substrate surfaces copper facing paper tinsel; Paste photoresistance film operation; Metal substrate back side removal unit divides photoresistance film; Electroplate the first metallic circuit layer; Paste photoresistance film operation; Metal substrate back side removal unit divides photoresistance film; Electroplate the second metallic circuit layer; Remove photoresistance film; The non-conductive glued membrane operation of pressing; Grind non-conductive glued membrane; Non-conductive film surface metallization preliminary treatment; Electroplate the 3rd metallic circuit layer; Paste photoresistance film operation; Metal substrate back side removal unit divides photoresistance film; Electroplate the 4th metallic circuit layer; Miniature etching; Paste photoresistance film operation; Metal substrate back side removal unit divides photoresistance film; Electroplate five metals and belong to line layer; Remove photoresistance film; Epoxy resin plastic packaging; Grinding epoxy resin surface; Paste photoresistance film operation; Metal substrate front removal unit divides photoresistance film; Etching operation; Remove photoresistance film; Electroplated metal layer.
Description
Technical field
The present invention relates to a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame.Belong to technical field of semiconductor encapsulation.
Background technology
The material of conventional multilayer circuit base plate adopts expensive organic board as main structural substrate material, then organic substrate surperficial one side or two-sided carry out Copper Foil pressure glutinous → coating photoresistance agent → exposure, development, window → etch (reserved line) → the Copper Foil pressure of carrying out Copper Foil etching → divest photoresist → carry out again second layer circuit is glutinous → coating photoresistance agent → exposure, development, window → etch (reserved line) → Copper Foil that divests photoresist → carry out second layer Copper Foil and ground floor holes → and metal material electroplates filling perforation → grinding → coating and to insulate green paint → exposure, development, window → plated with nickel gold or NiPdAu material.
the shortcoming of Conventional processing methods:
1.) adopt organic material substrate:
A.) cost of organic board more expensive than sheet metal go out the price of at least 2 ~ 3 times.
B.) organic board belongs to the corrosion resistant material of anti-strong acid-base, so can cause serious pollution to environment.
C.) organic board easily produces irregular warpage under the structure of multilayer line, so it is quite difficult for will accomplishing that ultra-thin (0.1mm) controls again in low warpage size, virtually turn increases fraction defective, cost and scrap the pollution of produced environment.
2.) adopt boring to fill out coating technology:
A.) machine drilling processing method is adopt bull to hole with current technology simultaneously, but namely once bore 10 holes at most at present, be at least all with the quantity of ten thousand in calculating in the demand of the every sheet template of the hole count of high-density base board, so adopt, the efficiency of machine drilling processing mode is low, yield is low, cost is high, equipment is many, space is large and people consumes many.
B.) drilling depth especially blind hole (not perforated), obtaining precision with single head machine drilling processing method at process micrometer level depth is suitable difficulty, in addition be the length of the more difficult control of drill bit many drill bits and the degree of depth of processing of bull, not to be degree of depth deficiency be exactly, and holes is quite difficult controls, as shown in figure 30.
C.) in the substrate handling ease that high density is ultra-thin, the degree of depth of machine drilling occurs that depth accuracy differs, so Copper Foil will be caused fully or not to expose in time there is degree of depth deficiency, make the metal material of follow-up its filling perforation when will carry out the filling perforation of the metal material degree of depth cannot gross area and Copper Foil fluid-tight engagement, virtually add contact resistance even to open a way, as shown in figure 30.
D.) laser drill processing mode (being commonly called as thunder carving) just comes accurate than machine drilling processing mode in the precision of drilling depth, as long as especially the laser of carbon dioxide touches the material of copper, the usefulness of laser will be decomposed, and the halt of laser drill position is the material surface at copper, effect processes a lot than machine drilling, but ground, hole, hole one boring, efficiency is low, cost is high, equipment many (equipment cost is more expensive than machine drilling process equipment), space are large and consumption manpower.
3.) the glutinous Copper Foil of pressure is in the glutinous not too large problem of the first lamination, but after ground floor Copper Foil has carried out metallic circuit etching, the Copper Foil of ground floor will have that the region height of metallic circuit is higher does not have the height of metallic line regions lower, when metal copper foil will being made to start to have the phenomenon of wave injustice when pressing glutinous second layer metal Copper Foil, and the number of plies of metal copper foil wave is larger more at most, the substrate of especially high density and ultra-thin precision is easy to cause interior void, metallic circuit out-of-flatness, mechanical stress surely disorderly, poor reliability, as shown in figure 31.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame is provided, substrate adopts metal material, technique is simple, metallic circuit layer adopts chemical plating metal material to lay foundation, do not need to use expensive organic substance substrate, significantly reduce cost of manufacture.
The object of the present invention is achieved like this: a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame, and described method comprises the steps:
Step one, get metal substrate
Step 2, metallic substrate surfaces copper facing paper tinsel
Step 3, the operation of subsides photoresistance film
The metal substrate front of copper facing paper tinsel is completed and the photoresistance film can carrying out exposure imaging is sticked at the back side respectively in step 2;
Step 4, metal substrate back side removal unit divide photoresistance film
The metal substrate back side utilizing exposure imaging equipment step 3 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the follow-up regional graphics needing to carry out the first metallic circuit layer plating in the metal substrate back side;
Step 5, electroplate the first metallic circuit layer
First metallic circuit layer in plating in the region that metal substrate back side removal unit divides photoresistance film in step 4;
Step 6, the operation of subsides photoresistance film
The photoresistance film can carrying out exposure imaging is sticked at the metal substrate back side of electroplating the first metallic circuit layer in step 5;
Step 7, metal substrate back side removal unit divide photoresistance film
The metal substrate back side utilizing exposure imaging equipment step 6 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the follow-up regional graphics needing to carry out the second metallic circuit layer plating in the metal substrate back side;
Step 8, electroplate the second metallic circuit layer
In step 7 metal substrate back side removal unit point photoresistance film region in plating on the second metallic circuit layer in order to connect the conductive posts of the first metallic circuit layer and the 3rd metallic circuit layer;
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10, the non-conductive glued membrane operation of pressing
At the non-conductive glued membrane of metal substrate back side pressing one deck;
Step 11, grind non-conductive film surface
Surface grinding is carried out after step 10 completes non-conductive glued membrane pressing;
Step 12, non-conductive film surface metallization preliminary treatment
Metallization preliminary treatment is carried out to non-conductive film surface;
Step 13, plating the 3rd metallic circuit layer
The plating that the 3rd metallic circuit layer is carried out on the pretreated surface of metallization is completed at non-conductive glued membrane;
Step 14, the operation of subsides photoresistance film
The photoresistance film can carrying out exposure imaging is sticked at the metal substrate front and back of step 13;
Step 15, metal substrate back side removal unit divide photoresistance film
The metal substrate back side utilizing exposure imaging equipment step 14 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in the metal substrate back side carry out electroplating;
Step 10 six, plating the 4th metallic circuit layer
The metal material region presented after step 15 completes windowing of photoresistance film plates the 4th metallic circuit layer;
Step 10 seven, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10 eight, miniature etching
Microetching technique is utilized to etch the 3rd metallic circuit layer at the metal substrate back side of step 10 seven;
Step 10 nine, the operation of subsides photoresistance film
The photoresistance film can carrying out exposure imaging is sticked in the metal substrate front of step 10 eight and the back side;
Step 2 ten, metal substrate back side removal unit divide photoresistance film
The metal substrate back side utilizing exposure imaging equipment step 10 nine to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in the metal substrate back side carry out electroplating;
Step 2 11, electroplate five metals and belong to line layer
The metal material region presented after step 2 ten completes windowing of photoresistance film plates five metals and belongs to line layer;
Step 2 12, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 2 13, epoxy resin transfer injection mo(u)lding
Epoxy resin transfer injection mo(u)lding is carried out at the metal substrate back side of step 2 12;
Step 2 14, grinding epoxy resin surface
Surface grinding is carried out after step 2 13 completes epoxy resin transfer injection mo(u)lding;
Step 2 15, the operation of subsides photoresistance film
Metal substrate front and back after step 2 14 completes grinding sticks the photoresistance film can carrying out exposure imaging;
Step 2 16, metal substrate front removal unit divide photoresistance film
The metal substrate front utilizing exposure imaging equipment step 2 15 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in metal substrate front carry out etching;
Step 2 17, etching operation
Metal substrate front photoresistance film in completing steps 26 window after region carry out etching operation;
Step 2 18, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 2 19, electroplated metal layer
After step 2 18 completes divesting of photoresistance film, electroplated metal layer is carried out to all metal surfaces.
Step 10 eight is moved between step 2 12 and step 2 13 and implement the 3rd metallic circuit layer microetch operation.
Step 6 between described step 5 and step 10 nine can repeat repeatedly to step 10 eight, forms more metallic circuit layers.
Metallic circuit layer material Wei Tong ﹑ Nie Jin ﹑ NiPdAu in described step 5, step 8, step 13 and step 2 11, silver, the metallics such as gold or tin metal.
The plating mode adopted in described step 2, step 5, step 8, step 13, step 10 six and step 2 11 is chemical deposition or metallide.
Photoresistance film in described step 3, step 6, step 14, step 10 nine and step 2 15 can be dry type photoresistance film also can be wet type photoresistance film.
Non-conductive glued membrane in described step 10 is pressing formula thermosetting epoxy resin.
The method removing photoresistance film in described step 9, step 2 12 and step 2 18 adopts chemical medicinal liquid soften and utilize the mode of high pressure water washing to remove photoresistance film.
In described step 2 19, the mode of electroplated metal layer can adopt the plating mode of regional area, and its material can be copper, nickel gold, NiPdAu, gold, silver, tin etc.
Described step 2 18 plants ball to metal surface after completing photoresistance film and removing.
In described step 10, the mode of the non-conductive glued membrane of pressing can adopt conventional roll unit, or carries out pressing under the environment of vacuum.
Described step 2 13 carries out epoxy resin transfer injection mo(u)lding at the metal substrate back side, utilize mould by softening epoxy resin transfer injection mo(u)lding, its objective is and all metallic circuit layers are carried out plastic packaging protection, can select in the material of epoxy resin and not have filler or Packed kind, the color of epoxide resin material also can carry out dyeing process according to the characteristic of product;
Pressing mode in described step 10 and the transfer injection mo(u)lding of step 2 13 can be replaced mutually, two kinds of optional one of mode.
Compared with prior art, the present invention has following beneficial effect:
1. its basic material of traditional board structure uses expensive organic substance substrate, and board structure material of the present invention uses lower-cost sheet metal.
2. traditional substrate metal line layer is the mode adopting Copper Foil pressure glutinous, easily in the glutinous process of pressure, form interior void, metallic circuit layer of the present invention then adopts the method for chemical plating metal material to lay foundation (if necessary can the disposable thickness being directly plated to needs, just the slow and compactness of speed can be poor), carry out the compactness that metallide increases metal level again, in order to reduce resistance value and to reach the metal layer thickness of needs fast.
3. traditional organic substance substrate have employed in the connection way of metallic circuit layer and metallic circuit layer holes and fills out electroplating method, easily causes loose contact even to open a way.And the present invention takes Direct Electroplating in the middle of the metallic circuit layer of up and down and grows the method for conductive posts (following step all adopts the word of metallic circuit layer to represent in illustrating, as shown in step 8 and Fig. 8), make upper/lower layer metallic line layer and between conductive posts have good combination.
4.) traditional organic substance substrate produces the metallic circuit layer of concavo-concave convexo-convex through etching in lower floor, and the pressure of directly carrying out Copper Foil on the metallic circuit layer of concavo-concave convexo-convex sticks, so easily cause the metallic circuit layer on upper strata also can concavo-concave convexo-convex out-of-flatness, metallic circuit layer more at most planarization will be poorer.The present invention makes metal guide pillar and non-conductive glued membrane maintain (as shown in step 11 and Figure 11) in same plane at non-conductive film surface through grinding, carry out electroless copper plating method again and carry out plated metal copper material, on the basis of chemical copper, once electrolytic plating can be carried out if desired again to increase the compactness (as shown in step 12 ~ 13 and Figure 12 ~ 13) of metal ion, on the basis of chemical copper, once electrolytic plating can be carried out if desired again with the compactness increasing metal ion.
Accompanying drawing explanation
Fig. 1 ~ Figure 29 is each operation schematic diagram of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame of the present invention.
Figure 30 adopted the schematic diagram that when filling out coating technology, machinery drilling depth precision differs of holing in the past.
Figure 31 is the schematic diagram in the past adopting metal copper foil wave injustice when pressing glutinous Copper Foil technology.
Embodiment
The present invention relates to a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame, described method comprises the steps:
Step one, get metal substrate
See Fig. 1, get the metal substrate that a slice thickness is suitable, the object that this sheet material uses just encapsulates with follow-up the transitional material supporting circuit Rotating fields and use for circuit makes, the material of this sheet material is mainly based on metal material, and the material of metal material can be Tong Cai ﹑ Tie Cai ﹑ zinc-plated Cai ﹑ Bu rust Gang Cai ﹑ aluminium etc.
Step 2, metallic substrate surfaces copper facing paper tinsel
See Fig. 2, plate one deck Copper Foil in metallic substrate surfaces, mainly in order to enable line layer and metal substrate fluid-tight engagement when follow-up circuit makes, the mode of plating can adopt chemical deposition or metallide.
Step 3, the operation of subsides photoresistance film
See Fig. 3, stick in the metal substrate front and the back side completing copper facing paper tinsel the photoresistance film can carrying out exposure imaging respectively, to protect follow-up electroplated metal layer process operation, photoresistance film can be dry type photoresistance film also can be wet type photoresistance film.
Step 4, metal substrate back side removal unit divide photoresistance film
See Fig. 4, the metal substrate back side utilizing exposure imaging equipment step 3 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the follow-up regional graphics needing to carry out the first metallic circuit layer plating in the metal substrate back side.
Step 5, electroplate the first metallic circuit layer
See Fig. 5, first metallic circuit layer in plating in the region that metal substrate back side removal unit divides photoresistance film in step 4, the material of metallic circuit layer can adopt copper, nickel gold, NiPdAu, silver, gold or tin metal, and plating mode can make chemical deposition or metallide mode.
Step 6, the operation of subsides photoresistance film
See Fig. 6, in step 5, the photoresistance film can carrying out exposure imaging is sticked at the metal substrate back side, and to protect the electroplating technology operation of the second follow-up metallic circuit layer, photoresistance film can be dry type photoresistance film also can be wet type photoresistance film.
Step 7, metal substrate back side removal unit divide photoresistance film
See Fig. 7, the metal substrate back side utilizing exposure imaging equipment step 6 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, object to need interconnected metallic region to expose on the first metallic circuit layer and the second metallic circuit layer, is beneficial to the electroplating activity of follow-up needs.
Step 8, electroplate the second metallic circuit layer
See Fig. 8, in step 7 metal substrate back side removal unit point photoresistance film region in plating on the second metallic circuit layer as the conductive posts in order to connect the first metallic circuit layer and the 3rd metallic circuit layer, the material of metallic circuit layer can adopt copper, nickel gold, NiPdAu, silver, gold or tin metal, and plating mode can make chemical deposition or metallide mode.
Step 9, removal photoresistance film
See Fig. 9, remove the photoresistance film of metallic substrate surfaces, object carries out non-conductive glued membrane operation for follow-up, and the method removing photoresistance film can adopt chemical medicinal liquid to soften and adopt the mode of high pressure water washing to remove photoresistance film.
Step 10, the non-conductive glued membrane operation of pressing
See Figure 10, at the non-conductive glued membrane of the metal substrate back side (having the region of line layer) pressing one deck, object will be that the first metallic circuit layer and the 3rd metallic circuit layer insulate, the mode of the non-conductive glued membrane of pressing can adopt conventional roll unit, or pressing is carried out under the environment of vacuum, the residual of air is produced to prevent pressing process, non-conductive glued membrane mainly pressing formula thermosetting epoxy resin, and epoxy resin can not have filler or Packed non-conductive glued membrane according to product performance employing, the color of epoxy resin can carry out dyeing process according to product performance.
Step 11, grind non-conductive film surface
See Figure 11, carry out non-conductive film surface grinding after completing steps ten, object to expose the second metallic circuit layer, maintains the evenness of non-conductive glued membrane and the second metallic circuit layer and control the thickness of non-conductive glued membrane.
Step 12, non-conductive film surface metallization preliminary treatment
See Figure 12, metallization preliminary treatment is carried out to non-conductive film surface, make its surface attachment last layer metallization macromolecular material or surface roughening, object is the catalyst conversion that can plate as subsequent metal material, adhesion metal macromolecular material can adopt spraying, plasma concussion, surface coarsening etc. again row dry;
Step 13, plating the 3rd metallic circuit layer
See Figure 13, the plating work that the 3rd metallic circuit layer is carried out on the pretreated surface of metallization is completed at non-conductive glued membrane, its objective is and carry out metallic circuit layer and the metal level done for follow-up, the material of the 3rd metallic circuit layer can be copper, nickel gold, NiPdAu, silver, gold or tin metal, and plating mode can be that chemical deposition adds metallide or all uses chemical deposition mode to plate out the thickness of needs.
Step 14, the operation of subsides photoresistance film
See Figure 14, stick the photoresistance film can carrying out exposure imaging at the metal substrate front and back of step 13, object is the making for subsequent metal line layer, and photoresistance film can be dry type photoresistance film also can be wet type photoresistance film.
Step 15, metal substrate back side removal unit divide photoresistance film
See Figure 15, the metal substrate back side utilizing exposure imaging equipment step 14 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in the metal substrate back side carry out electroplating.
Step 10 six, plating the 4th metallic circuit layer
See Figure 16, the metal material region presented after step 15 completes windowing of photoresistance film plates the 4th metallic circuit layer, the material of metallic circuit layer can be copper, nickel gold, NiPdAu, silver, gold or tin metal, and the method for plating line layer can be metallide also can be chemical deposition.
Step 10 seven, removal photoresistance film
See Figure 17, remove the photoresistance film of metallic substrate surfaces, object is in order to follow-up plastic packaging epoxy resin is prepared, and the method removing photoresistance film can adopt chemical medicinal liquid to soften and adopt the mode of high pressure water washing to remove photoresistance film.
Step 10 eight, miniature etching
See Figure 18, utilize microetching technique to etch the 3rd metallic circuit layer at the metal substrate back side of step 10 seven, the 3rd metallic circuit layer region that corrosion is irrelevant with metallic circuit, the mode of etching can use the process such as iron chloride or copper chloride.
Step 10 nine, the operation of subsides photoresistance film
See Figure 19, stick the photoresistance film can carrying out exposure imaging at the metal substrate back side of step 10 eight, object is the making for subsequent metal line layer, and photoresistance film can be dry type photoresistance film also can be wet type photoresistance film.
Step 2 ten, metal substrate back side removal unit divide photoresistance film
See Figure 20, the metal substrate back side utilizing exposure imaging equipment step 10 eight to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in the metal substrate back side carry out electroplating.
Step 2 11, electroplate five metals and belong to line layer
See Figure 21, the metal material region presented after step 2 ten completes windowing of photoresistance film plates five metals and belongs to line layer, the material of metallic circuit layer can be copper, nickel gold, NiPdAu, silver, gold or tin metal, and the method for plated metal line layer can be metallide also can be chemical deposition.
Step 2 12, removal photoresistance film
See Figure 22, remove the photoresistance film of metallic substrate surfaces, object is in order to follow-up plastic packaging epoxy resin is prepared, and the method removing photoresistance film can adopt chemical medicinal liquid to soften and adopt the mode of high pressure water washing to remove photoresistance film.
Step 2 13, epoxy resin transfer injection mo(u)lding
See Figure 23; an epoxy resin transfer injection mo(u)lding job is carried out at the metal substrate back side of step 2 12; utilize mould by softening epoxy resin transfer injection mo(u)lding; its objective is and all metallic circuit layers will be carried out plastic packaging protection; the material of epoxy resin can be selected does not have filler or Packed kind, and the color of epoxide resin material can carry out dyeing process according to product performance.
Step 2 14, grinding epoxy resin surface
See Figure 24, after step 2 13 completes epoxy resin transfer injection mo(u)lding, carry out surface grinding, object to expose the 4th metallic circuit layer, maintains the evenness of epoxy resin surface and the 4th metallic circuit layer and control the thickness of total metallic circuit layer.
Step 2 15, the operation of subsides photoresistance film
See Figure 25, after step 2 14 completes grinding metal substrate front and back stick the photoresistance film can carrying out exposure imaging, object is the etching for subsequent metal sheet material, and photoresistance film can be dry type photoresistance film also can be wet type photoresistance film.
Step 2 16, metal substrate front removal unit divide photoresistance film
See Figure 26, the metal substrate front utilizing exposure imaging equipment step 2 15 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in metal substrate front carry out etching.
Step 2 17, etching operation
See Figure 27, metal substrate front photoresistance film in completing steps 26 window after region carry out etching operation, its objective is and utilize corrosion technology corroding metal sheet material to expose the follow-up first layer metal line layer needing to encapsulate, etching method can be the technology mode of copper chloride or iron chloride.
Step 2 18, removal photoresistance film
See Figure 28, remove the photoresistance film of metallic substrate surfaces, object is in order to follow-up encapsulation is prepared, and the method removing photoresistance film can adopt chemical medicinal liquid to soften and adopt the mode of water under high pressure to remove photoresistance film.
Step 2 19, electroplated metal layer
See Figure 29; after the divesting of completing steps 28 photoresistance film; the mode that electroplated metal layer also can adopt the plating of localized metallic land is carried out to all metal surfaces; its objective is and will form required medium for the load of follow-up encapsulation and wire bonds, the material of coating can Shi Yin ﹑ Tong ﹑ Jin ﹑ Nie Jin ﹑ NiPdAu, tin and metal protective film (OSP) etc.
Claims (12)
1. a Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame, is characterized in that described method comprises the steps:
Step one, get metal substrate
Step 2, metallic substrate surfaces copper facing paper tinsel
Step 3, the operation of subsides photoresistance film
The metal substrate front of copper facing paper tinsel is completed and the photoresistance film can carrying out exposure imaging is sticked at the back side respectively in step 2;
Step 4, metal substrate back side removal unit divide photoresistance film
The metal substrate back side utilizing exposure imaging equipment step 3 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the follow-up regional graphics needing to carry out the first metallic circuit layer plating in the metal substrate back side;
Step 5, electroplate the first metallic circuit layer
First metallic circuit layer in plating in the region that metal substrate back side removal unit divides photoresistance film in step 4;
Step 6, the operation of subsides photoresistance film
In step 5, the photoresistance film can carrying out exposure imaging is sticked at the metal substrate back side;
Step 7, metal substrate back side removal unit divide photoresistance film
The metal substrate back side utilizing exposure imaging equipment step 6 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the follow-up regional graphics needing to carry out the second metallic circuit layer plating in the metal substrate back side;
Step 8, electroplate the second metallic circuit layer
In step 7 metal substrate back side removal unit point photoresistance film region in plating on the second metallic circuit layer in order to connect the conductive posts of the first metallic circuit layer and the 3rd metallic circuit layer;
Step 9, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10, the non-conductive glued membrane operation of pressing
At the non-conductive glued membrane of metal substrate back side pressing one deck;
Step 11, grind non-conductive glued membrane
Surface grinding surface is carried out after the non-conductive glued membrane pressing of completing steps ten;
Step 12, non-conductive film surface metallization preliminary treatment
Metallization preliminary treatment is carried out to non-conductive film surface;
Step 13, plating the 3rd metallic circuit layer
The plating of the 3rd metallic circuit layer is carried out at the pretreated non-conductive film surface of metallization;
Step 14, the operation of subsides photoresistance film
The photoresistance film can carrying out exposure imaging is sticked at the metal substrate front and back of step 13;
Step 15, metal substrate back side removal unit divide photoresistance film
The metal substrate back side utilizing exposure imaging equipment step 14 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in the metal substrate back side carry out electroplating;
Step 10 six, plating the 4th metallic circuit layer
The metal material region presented after step 15 completes windowing of photoresistance film plates the 4th metallic circuit layer;
Step 10 seven, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 10 eight, miniature etching
Microetching technique is utilized to etch the 3rd metallic circuit layer at the metal substrate back side of step 10 seven;
Step 10 nine, the operation of subsides photoresistance film
The photoresistance film can carrying out exposure imaging is sticked respectively in the metal substrate front of step 10 eight and the back side;
Step 2 ten, metal substrate back side removal unit divide photoresistance film
The metal substrate back side utilizing exposure imaging equipment step 10 nine to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in the metal substrate back side carry out electroplating;
Step 2 11, electroplate five metals and belong to line layer
The metal material region presented after step 2 ten completes windowing of photoresistance film plates five metals and belongs to line layer;
Step 2 12, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 2 13, epoxy resin transfer injection mo(u)lding
Epoxy resin transfer injection mo(u)lding work is carried out at the metal substrate back side of step 2 12;
Step 2 14, grinding epoxy resin surface
Surface grinding is carried out after step 2 13 completes epoxy resin transfer injection mo(u)lding;
Step 2 15, the operation of subsides photoresistance film
The photoresistance film can carrying out exposure imaging is sticked at the metal substrate front and back of step 2 14;
Step 2 16, metal substrate front removal unit divide photoresistance film
The metal substrate front utilizing exposure imaging equipment step 2 15 to be completed the operation of subsides photoresistance film is carried out graph exposure, development and removal unit and is divided figure photoresistance film, to expose the regional graphics that the follow-up needs in metal substrate front carry out etching;
Step 2 17, etching operation
Complete photoresistance film window after region carry out etching operation;
Step 2 18, removal photoresistance film
Remove the photoresistance film of metallic substrate surfaces;
Step 2 19, electroplated metal layer
After completing the divesting of photoresistance film, electroplated metal layer is carried out to all metal surfaces.
2. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1, is characterized in that step 10 eight to move between step 2 12 and step 2 13 to implement.
3. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1, is characterized in that the step 6 ~ step 8 between described step 5 ~ step 9 can repeat repeatedly, forms more metallic circuit layers.
4. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2, is characterized in that metallic circuit layer material Wei Tong ﹑ Nie Jin ﹑ NiPdAu, silver, gold or the tin metal in described step 5, step 8, step 13 and step 2 11.
5. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2, is characterized in that the plating mode adopted in described step 2, step 5, step 8, step 13, step 10 six and step 2 11 is chemical deposition or metallide.
6. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2, the photoresistance film that it is characterized in that in described step 3, step 6, step 14, step 10 nine and step 2 15 can be dry type photoresistance film also can be wet type photoresistance film.
7. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2, is characterized in that the non-conductive glued membrane in described step 10 is pressing formula thermosetting epoxy resin.
8. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2, the method that it is characterized in that removing in described step 9, step 2 12 and step 2 18 photoresistance film adopts chemical medicinal liquid soften and utilize the mode of high pressure water washing to remove photoresistance film.
9. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2, is characterized in that the mode of electroplated metal layer in described step 2 19 can adopt the plating mode of regional area.
10. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2, is characterized in that described step 2 18 plants ball to metal surface after completing photoresistance film and removing.
11. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2, is characterized in that the mode of the non-conductive glued membrane of pressing in described step 10 can adopt conventional roll unit, or carry out pressing under the environment of vacuum.
12. a kind of Plating-then-etchingtechnical technical method for multi-layer circuit substrate with metal frame according to claim 1 and 2; it is characterized in that: described step 2 13 carries out epoxy resin transfer injection mo(u)lding at the metal substrate back side; utilize mould by softening epoxy resin transfer injection mo(u)lding; its objective is and all metallic circuit layers are carried out plastic packaging protection; can select in the material of epoxy resin and not have filler or Packed kind, the color of epoxide resin material also can carry out dyeing process according to the characteristic of product.
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| CN108243571A (en) * | 2016-12-23 | 2018-07-03 | 东莞新科技术研究开发有限公司 | The manufacturing method of flexible PCB |
| CN110536564B (en) * | 2019-08-30 | 2022-04-22 | 宁波华远电子科技有限公司 | Method for manufacturing circuit board with boss as bonding pad |
| CN110856356A (en) * | 2019-11-15 | 2020-02-28 | 莆田市涵江区依吨多层电路有限公司 | Method for producing copper substrate based on resistance module |
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Effective date of registration: 20160429 Address after: 214434 Jiangyin, Jiangsu, Chengjiang city street, Long Hill Road, No. 78 Patentee after: Jiangsu Changjiang Electronics Technology Co., Ltd. Address before: 214434 Jiangyin, Jiangsu Province, the development of mountain road, No. 78, No. Patentee before: Jiangsu Changjiang Electronics Technology Co., Ltd. |