CN102945855A - Luminescent display backplate, display device and preparation method of pixel definition layer - Google Patents
Luminescent display backplate, display device and preparation method of pixel definition layer Download PDFInfo
- Publication number
- CN102945855A CN102945855A CN2012104553461A CN201210455346A CN102945855A CN 102945855 A CN102945855 A CN 102945855A CN 2012104553461 A CN2012104553461 A CN 2012104553461A CN 201210455346 A CN201210455346 A CN 201210455346A CN 102945855 A CN102945855 A CN 102945855A
- Authority
- CN
- China
- Prior art keywords
- layer
- pixel
- define
- defines
- sensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 61
- 239000011347 resin Substances 0.000 claims abstract description 47
- 229920005989 resin Polymers 0.000 claims abstract description 47
- 238000011049 filling Methods 0.000 claims abstract description 11
- 238000004020 luminiscence type Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 18
- 206010070834 Sensitisation Diseases 0.000 claims description 15
- 230000008313 sensitization Effects 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 230000002209 hydrophobic effect Effects 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000011031 large-scale manufacturing process Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000010148 water-pollination Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000005495 cold plasma Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a luminescent display backplate, a display device and a preparation method of a pixel definition layer and relates the field of display, and the preparation method can be used for ensuring that luminescent material drops formed by printing are paved in a pixel region and preventing the drops from flowing to an adjacent pixel region. The luminescent display backplate comprises a base plate and the pixel definition layer arranged on the base plate, wherein the pixel definition layer comprises a first light-sensitive resin layer, a first definition layer and a second definition layer which are sequentially arranged from bottom to top; in the corresponding region of each pixel, the first light-sensitive resin layer, the first definition layer and the second definition layer are provided with openings; and the opening of the first definition layer is smaller than those of the second definition layer and the first light-sensitive resin layer, so that a luminescent material filling region with a wider top and a narrower bottom is formed. The luminescent display backplate, the display device and the pixel definition layer are used in an improved printing film formation technology, so that the luminescent material drops are paved in the pixel region, and the luminescent quality of the display backplate is improved.
Description
Technical field
The present invention relates to the demonstration field, relate in particular to the preparation method that a kind of luminescence display backboard, display unit and pixel define layer.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) and polymer LED (Polymer Light-emitting Diode, PLED), because it has self-luminous, quick response, wide visual angle and can be produced on the first-class unique features of flexible substrate, estimate that a few years from now on will become the main flow in demonstration field as the display on basis take OLED, PLED.
OLED (or PLED) shows that backboard comprises substrate, ITO (Indium Tin Oxide, indium tin oxide) anode, luminescent layer and negative electrode etc., its principle of luminosity is: under the voltage effect, hole and electronics drop to lower being with luminescent layer is compound, emit the energy photon identical with energy gap, its wavelength (glow color) depends on the energy gap size of luminescent layer.
Printing technique is adopted in the making of luminescent layer usually, the luminescent material of liquid state is paved with specific pixel region, yet the Pixel Dimensions of existing high-resolution products is generally 30 μ m * 180 μ m, print the liquid-drop diameter of formation greater than 30 μ m, be in same magnitude with the size of pixel, therefore, for guaranteeing that the drop after the printing can be smoothly, smooth is paved with in the pixel region, avoid simultaneously drop to flow to neighbor, tendency adopts the pixel of double membrane structure formation to define a layer (Photo Define Layer at present, PDL), underlying membrane adopts composition technique at pixel region field width opening, and upper layer film adopts composition technique at the pixel region narrow opening, but this scheme unavoidably will increase the mask plate usage quantity, increase exposure process, cause manufacturing cost to rise, be unfavorable for large-scale production.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of luminescence display backboard, display unit and pixel to define the preparation method of layer, can guarantee that the luminescent material drop of printing formation can be tiled in the pixel region, avoids drop to flow to the neighbor district.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A kind of luminescence display backboard comprises: substrate and the pixel that is arranged on the described substrate define layer, and described pixel defines layer and comprises:
The first photo-sensitive resin that sets gradually from bottom to top, transparent first defines layer and transparent second and defines layer;
Corresponding region in each pixel, described the first photo-sensitive resin, first defines layer and second and defines layer and be provided with opening, and the described first opening that defines layer defines layer and the opening of described the first photo-sensitive resin less than described second, to form low wide and up narrow luminescent material region filling.
Preferably, described second define the layer formed by hydrophobic material.
Preferably, described second define layer for silicon nitride film.
Preferably, described first define the layer formed by hydrophilic material.
Preferably, described first define layer for silicon oxide film.
The present invention also provides a kind of display unit, comprising: described arbitrary luminescence display backboard.
On the other hand, the present invention also provides a kind of pixel of luminescence display backboard to define the preparation method of layer, and described luminescence display backboard comprises: substrate and the pixel that is arranged on the described substrate define layer, and described method comprises:
Form successively the first photo-sensitive resin, first and define layer, second and define layer and the second photo-sensitive resin, described first defines layer and described second defines layer all transparent;
Expose, make described second photo-sensitive resin of each pixel corresponding region and the equal sensitization of described the first photo-sensitive resin of below thereof;
Remove described second photo-sensitive resin of each pixel corresponding region sensitization, expose described first and define layer;
Carry out etching, make described first defining described second of layer and lower floor and define layer and form opening in the corresponding region of each pixel of exposing, wherein, when carrying out etching, described second define the layer etch rate less than described first define the layer etch rate so that described second define the layer opening less than described first define the layer opening.
Further, described method also comprises: described the first photo-sensitive resin of removing each pixel corresponding region sensitization.
Preferably, described second define the layer formed by hydrophobic material.
Preferably, described second define layer for silicon nitride film.
Preferably, described first define the layer formed by hydrophilic material.
Preferably, described first define layer for silicon oxide film.
Alternatively, adopt dry etching described first to define described second of layer and lower floor and define layer and carry out etching what expose.
Alternatively, adopt wet etching described first to define described second of layer and lower floor and define layer and carry out etching what expose, and employed etching liquid is little to the etch rate of the etch rate comparison Si oxide of silicon nitride.
The invention provides the preparation method that a kind of luminescence display backboard, display unit and pixel define layer, form successively first the first photo-sensitive resin, first and define layer, second and define layer and the second photo-sensitive resin; Exposure when increasing photoetching again makes the equal sensitization of first, second photo-sensitive resin of each pixel corresponding region; Then remove the second photo-sensitive resin, and utilize first, second different etching speed that defines layer material, the pixel of each pixel corresponding region is defined the structure that layer etching is low wide and up narrow inverted trapezoidal.When this structure can guarantee to print, the pixel that can be tiled in the drop of luminescent material defines in the pixel region of layer, avoids drop to splash or flows to the neighbor district, and only need a photoetching process, reduce the usage quantity of mask plate, thereby reduced manufacturing cost.
Description of drawings
The vertical view of the luminescence display backboard that Fig. 1 provides for the embodiment of the invention one;
Fig. 2 is that the embodiment of the invention one luminescence display backboard is along the cross-sectional view of A-A ' direction;
Fig. 3 is preparation method's flow chart that the pixel of the embodiment of the invention two luminescence display backboards defines layer;
Fig. 4 is that the embodiment of the invention two preparation pixels define each the rete schematic diagram that forms in the layer;
Fig. 5 is the exposure schematic diagram that the embodiment of the invention two preparation pixels define each rete in the layer;
Fig. 6 is that the embodiment of the invention two preparation pixels define the schematic diagram that pixel behind the second photo-sensitive resin of removing sensitization in the layer defines layer;
Fig. 7 is that the embodiment of the invention two preparation pixels define and carry out the schematic diagram that pixel after the etching defines layer in the layer.
Description of reference numerals
The 10-substrate, the 11-pixel defines layer, 111-the first photo-sensitive resin, 112-first defines layer, and 113-second defines layer, 114-the second photo-sensitive resin, 12-luminescent material region filling, 13-anode electrode.
Embodiment
The embodiment of the invention provides a kind of luminescence display backboard, display unit and pixel to define the preparation method of layer, the pixel that can be tiled in the luminescent material drop that forms in the time of can guaranteeing to print defines in the pixel region of layer, avoid drop to flow to the neighbor district, and only need a photoetching process, thereby reduce the mask plate usage quantity, reduce manufacturing cost.
Below in conjunction with accompanying drawing the embodiment of the invention is described in detail.Embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Embodiment one
The embodiment of the invention provides a kind of luminescence display backboard, and as shown in Figure 1 and Figure 2, this backboard comprises: substrate 10 and the pixel that is arranged on the substrate 10 define layer 11, and described pixel defines layer 11 and comprises:
The first photo-sensitive resin 111 that sets gradually from bottom to top, transparent first defines layer 112 and transparent second and defines layer 113;
Corresponding region in each pixel, the first photo-sensitive resin 111, first defines layer 112 and second and defines layer and 113 be provided with opening, and first defines layer 111 opening less than the second opening that defines layer the 112 and first photo-sensitive resin 113, forms low wide and up narrow luminescent material region filling 12.
OLED (or PLED) luminescence display backboard comprises substrate, ITO (Indium Tin Oxide, indium tin oxide) anode, luminescent layer and negative electrode etc.Wherein, when forming luminescent layer, for OLED or PLED backboard, especially high-resolution demonstration backboard, luminescent material is in identical magnitude via the drop size that printing technique forms with the size of backboard pixel, therefore printing needs very high accuracy, when printing simultaneously inevitably meeting so that drop train off, thereby cause display RGB colour contamination, the appearance of the defectives such as Mura, formation for fear of above defective, the pixel that arranges the present embodiment first defines layer 11, with the form of printing luminescent material is filled to the pixel region that pixel defines layer 11 again, particularly, what the present embodiment adopted that trilaminate material forms luminous organic material in the pixel defines layer (PDL), its concrete structure comprises: undermost the first photoresist 111, first on it define second of layer 112 and the superiors and define layer 113.
The described pixel of the present embodiment defines layer 11 and is arranged on the substrate that is formed with ito anode electrode 13, and described pixel defines layer 11 and is provided with luminescent material region filling 12, particularly: in the corresponding region of each pixel, the first photo-sensitive resin 111, first defines layer 112 and second defines layer and 113 is provided with opening, and the opening that the first photo-sensitive resin 111 and first defines layer 112 is large, being positioned at second of top layer, to define layer 113 opening little, namely second define layer 113 hatch bore diameter L less than the first hatch bore diameter l that defines layer 112, form the luminescent material region filling 12 of low wide and up narrow inverted trapezoidal, in a single day the luminescent material drop splashes into or flows into like this, just is difficult for flowing out.
In the present embodiment, the bottom area of luminescent material region filling 12 is large but open top is little, such structural design is easy to fill luminescent material, the pixel that can be tiled in the drop of the luminescent material in the time of can guaranteeing to print defines in the pixel region of layer, avoid drop to flow to the neighbor district, and only need a photoetching process can form (specifically seeing embodiment two), can reduce the mask plate usage quantity, thereby reduce manufacturing cost.
Wherein, preferably, second of upper strata is defined layer 113 and is formed by hydrophobic material, for example silicon nitride.
When the luminescent material fluid drips defines layer 11 surface in pixel, need to form drop, like this when printing departs from pixel region, the luminescent material drop could flow into luminescent material region filling 12 automatically, and can luminescent material define the drop that layer 11 surface form in pixel, depend on that luminescent material defines the wetting characteristics on layer 11 surface in pixel, deeper reason depends on that pixel defines the surface energy of layer 11.
The top layer that the present embodiment pixel defines layer 11 namely second defines layer 113, select hydrophobic material to form, and existing luminescent material is generally hydrophily, luminescent material is when printing departs from pixel region like this, can form drop and flow into luminescent material region filling 12, need not that pixel is defined layer 11 and carry out surface treatment, also need not to increase equipment investment, therefore can reduce cost, be convenient to large-scale production.
Preferably, first of lower floor defines layer 112 and is formed by hydrophilic material, for example Si oxide.
First defines layer 112 is formed by hydrophilic material, and luminescent material generally also is hydrophily, like this when the luminescent material drop splashes into or flows into luminescent material region filling 12, what hydrophilic material formed first defines layer 112 and can play and even up the luminescent material drop, make the luminescent material drop entirely be paved with the effect of pixel region, thereby improve the luminous mass of luminescence display backboard.
As preferred embodiment a kind of, second defines layer 113 is silicon nitride film (SiN
x, wherein the x value is 1～4/3), reference thickness is 200～300nm; First defines layer is silicon oxide film (SiO
x, wherein the x value is 1～2), reference thickness also is 200～300nm.
Certainly, the present embodiment is not got rid of the situation that luminescent material is hydrophobic material yet, and at this moment preferably, second of upper strata is defined layer 113 and formed by hydrophilic material, and first of lower floor defines layers 112 and formed by hydrophobic material.
The described luminescence display backboard of the embodiment of the invention, when defining layer and can guarantee to print luminescent material because of the pixel that arranges on it, the pixel that can be tiled in the drop of luminescent material defines in the pixel of layer, avoid drop to flow to the neighbor district, thereby improve the luminous mass of luminescence display backboard, avoid display the defectives such as RGB colour contamination, Mura to occur, and this pixel to define layer manufacturing process simple, can reduce cost, be convenient to large-scale production.
The embodiment of the invention also provides a kind of display unit, and it comprises above-mentioned any one luminescence display backboard, can improve luminous mass, avoid occurring the defectives such as RGB colour contamination, Mura, and manufacturing process is simple, can reduce cost, is convenient to large-scale production.
Described display unit can be any product or parts with Presentation Function such as oled panel, Electronic Paper, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
Embodiment two
The embodiment of the invention provides a kind of pixel of luminescence display backboard to define the preparation method of layer, and described luminescence display backboard comprises: substrate and the pixel that is arranged on the described substrate define layer, and as shown in Figure 3, the method comprises:
Step 201, form the first photo-sensitive resin 111, first successively and define layer 112, second and define layer 113 and second photo-sensitive resin 114, described first defines layer 112 and second, and to define layer 113 all transparent, as shown in Figure 4;
This step forms undermost the first photoresist 111, first on it defines layer 112, second and define layer the 113 and second photoresist 114, and form the mode of (or preparation) these retes, can be physical vapour deposition (PVD) (PVD) method such as evaporation, sputter, ion plating etc., also can be that chemical vapour deposition (CVD) forms (CVD) method, general material according to film to be deposited is selected, and the present embodiment does not limit this.Define layer 112 as silicon oxide film take first, second defines layer 113 for silicon nitride film is example, and a kind of specific solution is as follows:
After backboard was through grid-gate insulation layer-active layer-source/leakage-passivation layer (form thin-film transistor, and described thin-film transistor being take bottom grating structure as example), deposition one deck ITO formed the anode electrode 13 of each pixel as anode material through over etching;
Spin coating one deck photoresist material (the first photoresist 111) on ITO, its reference thickness is 800nm～1000nm;
On photoresist, utilize chemical vapour deposition (CVD) (PECVD) or normal-pressure radio-frequency cold plasma (TEOS), deposition SiNx film defines layer 112, reference thickness 200nm～300nm as first;
At SiN
xOn, utilize same deposition technique, obtain one deck SiO
xDefine layer 113, reference thickness 200nm～300nm as second;
At SiO
xOn spin coating one deck photoresist material (the second photoresist 114) again so that next step exposure etching figure.
Step 202, expose, make the second photo-sensitive resin 114 of each pixel corresponding region and the first photo-sensitive resin 111 equal sensitization of below thereof, as shown in Figure 5;
Exposure when increasing photoetching in this step is because first define layer 112 (SiO for example
xFilm) and second define layer 113 (SiN for example
xFilm) all be transparent, therefore, the first photo-sensitive resin 111 of the second photo-sensitive resin 114 and ito anode electrode 13 tops all is exposed, as shown in Figure 5.
Step 203, remove the second photo-sensitive resin 114 of each pixel corresponding region sensitization, expose first and define layer 113, form structure shown in Figure 6;
Utilize developer solution in this step, each pixel corresponding region is washed off through second photo-sensitive resin 114 (PR of the superiors) of sensitization.
Step 204, the etching of carrying out, make first defining second of layer 113 and lower floor and define layer 113 and form opening in the corresponding region of each pixel of exposing, wherein, when carrying out etching, second defines layer 113 etch rate less than the first etch rate that defines layer 112, so that second define layer 113 opening less than the first opening that defines layer 112, as shown in Figure 7.
Utilize different materials different to the sensitivity of etching liquid/ion beam in this step, its etch rate is also different, selects during concrete etching to define layer 113 etch rate less than the first method that defines layer 112 etch rate to second.
Particularly, define layer 112 as silicon oxide film take first, second to define layer 113 be example for silicon nitride film: alternatively, and the silicon nitride SiN of employing dry etching to exposing
xFilm (second defines layer 113) and Si oxide SiO
xFilm (first defines layer 112) carries out etching, because of SiN
xFilm is with respect to SiO
xIt is fast many that the etch rate of film is wanted, and have the lateral etching phenomenon, so under the same etching condition of result, SiN
xThe opening of film is less than SiO
xThe opening of film, the dry etching here include but not limited to that sputter and ion beam mill erosion, plasma etching (PlasmaEtching), high pressure plasma etching, high-density plasma (HDP) etching and reactive ion etching (RIE).Perhaps alternatively, also can adopt wet etching that the silicon nitride film (second defines layer 113) and the silicon oxide film (first defines layer 112) that expose are carried out etching, and choice for use is to the little etching liquid of etch rate of the etch rate comparison Si oxide of silicon nitride.At last, this step is also utilized washing lotion (Stripper), peels off remaining the second photoresist 114, certainly also can adopt alternate manner.
Further, described method also comprises: step 205, remove the first photo-sensitive resin 111 of each pixel corresponding region sensitization, form pixel shown in Figure 2 and define layer 11.
This step is utilized developer solution, and the first photo-sensitive resin 111 after each pixel corresponding region sensitization is peeled off, and certainly is not limited to this in the implementation, also can adopt alternate manner.
In embodiments of the present invention; the sequence number of described each step can not be used for limiting the sequencing of each step; for those of ordinary skills, under the prerequisite of not paying creative work, the priority of each step is changed also within protection scope of the present invention.
Wherein, preferably, second defines layer 113 is formed by hydrophobic material, for example silicon nitride; First defines layer 112 is formed by hydrophilic material, for example Si oxide.
The described luminescence display backboard of embodiment of the invention pixel defines the preparation method of layer, forms successively first the first photo-sensitive resin, first and defines layer, second and define layer and the second photo-sensitive resin; Exposure when increasing photoetching again makes the equal sensitization of first, second photo-sensitive resin of each pixel corresponding region simultaneously; Then remove the second photo-sensitive resin of sensitization, and utilize first, second to define the different etching speed of layer material, the pixel of each pixel corresponding region is defined the structure that layer etching is low wide and up narrow inverted trapezoidal, when this structure can guarantee to print, the pixel that can be tiled in the drop of luminescent material defines in the pixel region of layer, avoid drop to flow to the neighbor district, and manufacturing process is simple, only need a photoetching composition technique, reduce the usage quantity of mask plate, thereby reduced manufacturing cost.
Should be noted, although in the embodiment of the invention take the preparation process of luminescence display backboard luminescent layer as example, but application of the present invention should be not limited to this, the present invention can be widely used in adopting printing technique to form the scene of patterned film, for example, the preparation process of the color rete of color membrane substrates is enumerated no longer one by one at this.
The described technical characterictic of the embodiment of the invention in the situation that do not conflict, can be used in combination arbitrarily mutually.
The above; be the specific embodiment of the present invention only, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by described protection range with claim.
Claims (14)
1. luminescence display backboard comprises: substrate and the pixel that is arranged on the described substrate define layer, it is characterized in that, described pixel defines layer and comprises:
The first photo-sensitive resin that sets gradually from bottom to top, transparent first defines layer and transparent second and defines layer;
Corresponding region in each pixel, described the first photo-sensitive resin, first defines layer and second and defines layer and be provided with opening, and the described first opening that defines layer defines layer and the opening of described the first photo-sensitive resin less than described second, to form low wide and up narrow luminescent material region filling.
2. luminescence display backboard according to claim 1 is characterized in that,
Described second defines layer is formed by hydrophobic material.
3. luminescence display backboard according to claim 2 is characterized in that,
Described second defines layer is silicon nitride film.
4. each described luminescence display backboard is characterized in that according to claim 1-3,
Described first defines layer is formed by hydrophilic material.
5. luminescence display backboard according to claim 4 is characterized in that,
Described first defines layer is silicon oxide film.
6. a display unit is characterized in that, comprising: each described luminescence display backboard of claim 1-5.
7. the pixel of a luminescence display backboard defines the preparation method of layer, and described luminescence display backboard comprises: substrate and the pixel that is arranged on the described substrate define layer, it is characterized in that, described method comprises:
Form successively the first photo-sensitive resin, first and define layer, second and define layer and the second photo-sensitive resin, described first defines layer and described second defines layer all transparent;
Expose, make described second photo-sensitive resin of each pixel corresponding region and the equal sensitization of described the first photo-sensitive resin of below thereof;
Remove described second photo-sensitive resin of each pixel corresponding region sensitization, expose described first and define layer;
Carry out etching, make described first defining described second of layer and lower floor and define layer and form opening in the corresponding region of each pixel of exposing, wherein, when carrying out etching, described second define the layer etch rate less than described first define the layer etch rate so that described second define the layer opening less than described first define the layer opening.
8. method according to claim 7 is characterized in that, also comprises:
Remove described first photo-sensitive resin of each pixel corresponding region sensitization.
9. method according to claim 7 is characterized in that,
Described second defines layer is formed by hydrophobic material.
10. method according to claim 9 is characterized in that,
Described second defines layer is silicon nitride film.
11. method according to claim 10 is characterized in that,
Described first defines layer is formed by hydrophilic material.
12. method according to claim 11 is characterized in that,
Described first defines layer is silicon oxide film.
13. method according to claim 12 is characterized in that,
Adopt dry etching described first to define described second of layer and lower floor and define layer and carry out etching what expose.
14. method according to claim 12 is characterized in that,
Adopt wet etching described first to define described second of layer and lower floor and define layer and carry out etching what expose, and employed etching liquid is little to the etch rate of the etch rate comparison Si oxide of silicon nitride.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210455346.1A CN102945855B (en) | 2012-11-13 | 2012-11-13 | Luminescence display backboard, display device and pixel define the preparation method of layer |
| EP13190699.2A EP2731139B1 (en) | 2012-11-13 | 2013-10-29 | Light-emitting display backplane, display device and manufacturing method of pixel define layer |
| EP22153045.4A EP4012780A1 (en) | 2012-11-13 | 2013-10-29 | Light-emitting display backplane, display device and manufacturing method of pixel define layer |
| KR1020130135546A KR101537450B1 (en) | 2012-11-13 | 2013-11-08 | Light-emitting display backplane, display device and manufacturing method of pixel define layer |
| JP2013233796A JP6219685B2 (en) | 2012-11-13 | 2013-11-12 | Luminescent display backplane, display device, and pixel definition layer manufacturing method |
| US14/078,569 US9065001B2 (en) | 2012-11-13 | 2013-11-13 | Light-emitting display backplane, display device and manufacturing method of pixel define layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210455346.1A CN102945855B (en) | 2012-11-13 | 2012-11-13 | Luminescence display backboard, display device and pixel define the preparation method of layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102945855A true CN102945855A (en) | 2013-02-27 |
| CN102945855B CN102945855B (en) | 2016-08-03 |
Family
ID=47728784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210455346.1A Active CN102945855B (en) | 2012-11-13 | 2012-11-13 | Luminescence display backboard, display device and pixel define the preparation method of layer |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9065001B2 (en) |
| EP (2) | EP2731139B1 (en) |
| JP (1) | JP6219685B2 (en) |
| KR (1) | KR101537450B1 (en) |
| CN (1) | CN102945855B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413819A (en) * | 2013-07-22 | 2013-11-27 | 京东方科技集团股份有限公司 | Organic light emitting display panel, pixel defining layer and manufacturing method thereof |
| CN104241313A (en) * | 2013-06-11 | 2014-12-24 | 业鑫科技顾问股份有限公司 | Panel for organic light-emitting diode |
| CN104393192A (en) * | 2014-12-04 | 2015-03-04 | 京东方科技集团股份有限公司 | Pixel demarcation layer, manufacturing method, display panel and display device thereof |
| CN104659287A (en) * | 2015-03-12 | 2015-05-27 | 京东方科技集团股份有限公司 | Pixel defining layer and preparation method, display substrate and preparation method and display device |
| KR20150107584A (en) * | 2014-03-14 | 2015-09-23 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Method for integrated circuit patterning |
| CN106941112A (en) * | 2017-05-05 | 2017-07-11 | 京东方科技集团股份有限公司 | Pixel defining layer and its manufacture method, display base plate |
| CN107204404A (en) * | 2017-04-11 | 2017-09-26 | 上海天马微电子有限公司 | Organic electroluminescent device |
| CN107845661A (en) * | 2017-10-26 | 2018-03-27 | 合肥鑫晟光电科技有限公司 | A kind of pixel defining layer and preparation method thereof, display panel |
| WO2018099062A1 (en) * | 2016-11-30 | 2018-06-07 | 京东方科技集团股份有限公司 | Display substrate and preparation method, and display apparatus |
| CN108269833A (en) * | 2016-12-30 | 2018-07-10 | 乐金显示有限公司 | Organic light-emitting display device |
| CN108899345A (en) * | 2018-07-02 | 2018-11-27 | 京东方科技集团股份有限公司 | Pixel defines structure and its manufacturing method, display panel and display device |
| CN108987442A (en) * | 2018-06-29 | 2018-12-11 | 云谷（固安）科技有限公司 | Organnic electroluminescent device |
| WO2019071752A1 (en) * | 2017-10-12 | 2019-04-18 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate, manufacturing method therefor and oled display device |
| CN110164941A (en) * | 2019-05-31 | 2019-08-23 | 京东方科技集团股份有限公司 | Pixel defining layer and production method, display panel and production method, display device |
| CN111430300A (en) * | 2020-03-31 | 2020-07-17 | 京东方科技集团股份有限公司 | O L ED array substrate, preparation method thereof, display panel and display device |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9257282B2 (en) * | 2014-05-02 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
| US10520769B2 (en) * | 2014-10-31 | 2019-12-31 | eLux, Inc. | Emissive display with printed light modification structures |
| US9941125B2 (en) | 2015-08-31 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
| CN105355741B (en) | 2015-11-02 | 2017-09-29 | 厦门市三安光电科技有限公司 | A kind of LED epitaxial structure and preparation method |
| CN106920828B (en) * | 2017-03-29 | 2019-11-05 | 京东方科技集团股份有限公司 | A kind of organic electroluminescent display panel and preparation method |
| CN108321175B (en) * | 2018-01-31 | 2021-02-12 | 京东方科技集团股份有限公司 | Substrate, manufacturing method thereof and display device |
| JP2020031111A (en) * | 2018-08-21 | 2020-02-27 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing system |
| CN110098352B (en) | 2019-05-17 | 2023-01-13 | 合肥京东方卓印科技有限公司 | Defining solution, display substrate, display device and method for preparing pixel defining layer |
| CN111613649A (en) * | 2020-05-18 | 2020-09-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| US20220077251A1 (en) | 2020-09-04 | 2022-03-10 | Applied Materials, Inc. | Oled panel with inorganic pixel encapsulating barrier |
| CN112376015A (en) * | 2020-11-09 | 2021-02-19 | 京东方科技集团股份有限公司 | Mask and manufacturing method thereof, display substrate and manufacturing method thereof |
| WO2023014897A1 (en) | 2021-08-04 | 2023-02-09 | Applied Materials, Inc. | Descending etching resistance in advanced substrate patterning |
| US11610954B1 (en) | 2022-02-14 | 2023-03-21 | Applied Materials, Inc. | OLED panel with advanced sub-pixel overhangs |
| US11882709B2 (en) | 2022-05-12 | 2024-01-23 | Applied Materials, Inc. | High resolution advanced OLED sub-pixel circuit and patterning method |
| US11527732B1 (en) | 2022-05-31 | 2022-12-13 | Applied Materials, Inc. | OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same |
| WO2024226139A1 (en) * | 2023-04-25 | 2024-10-31 | Applied Materials, Inc. | Multiple overhang to enhanced pixel encapsulation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003007460A (en) * | 2001-06-22 | 2003-01-10 | Sony Corp | Method for manufacturing display equipment, and display equipment |
| JP2003229267A (en) * | 2002-01-31 | 2003-08-15 | Toyota Industries Corp | Organic el display device |
| US20050112341A1 (en) * | 2003-11-11 | 2005-05-26 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US20060170338A1 (en) * | 2005-02-02 | 2006-08-03 | Dainippon Screen Mfg. Co., Ltd. | Substrate for organic EL and method for manufacturing the same |
| US20100102715A1 (en) * | 2008-10-23 | 2010-04-29 | Suh Min-Chul | Organic light emitting diode display device and method of manufacturing the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7291970B2 (en) * | 2002-09-11 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus with improved bank structure |
| KR20070011009A (en) * | 2005-07-20 | 2007-01-24 | 주식회사 대우일렉트로닉스 | Oled device without partition and method for fabricating the same |
| KR101240653B1 (en) * | 2006-04-26 | 2013-03-08 | 삼성디스플레이 주식회사 | Thin film transistor array panel and method for manufacturing the same |
| JP5256605B2 (en) * | 2006-01-18 | 2013-08-07 | 凸版印刷株式会社 | Method for manufacturing organic electroluminescence element |
| JP5055925B2 (en) * | 2006-09-29 | 2012-10-24 | セイコーエプソン株式会社 | Electro-optical device and manufacturing method thereof |
| JP2008091072A (en) * | 2006-09-29 | 2008-04-17 | Seiko Epson Corp | Electro-optical device and its manufacturing method |
| JP2009187898A (en) * | 2008-02-08 | 2009-08-20 | Seiko Epson Corp | Organic el device and its manufacturing method |
| JP5827104B2 (en) * | 2010-11-19 | 2015-12-02 | 株式会社半導体エネルギー研究所 | Lighting device |
| KR102010429B1 (en) * | 2011-02-25 | 2019-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device and electronic device using light-emitting device |
-
2012
- 2012-11-13 CN CN201210455346.1A patent/CN102945855B/en active Active
-
2013
- 2013-10-29 EP EP13190699.2A patent/EP2731139B1/en active Active
- 2013-10-29 EP EP22153045.4A patent/EP4012780A1/en active Pending
- 2013-11-08 KR KR1020130135546A patent/KR101537450B1/en active IP Right Grant
- 2013-11-12 JP JP2013233796A patent/JP6219685B2/en active Active
- 2013-11-13 US US14/078,569 patent/US9065001B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003007460A (en) * | 2001-06-22 | 2003-01-10 | Sony Corp | Method for manufacturing display equipment, and display equipment |
| JP2003229267A (en) * | 2002-01-31 | 2003-08-15 | Toyota Industries Corp | Organic el display device |
| US20050112341A1 (en) * | 2003-11-11 | 2005-05-26 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US20060170338A1 (en) * | 2005-02-02 | 2006-08-03 | Dainippon Screen Mfg. Co., Ltd. | Substrate for organic EL and method for manufacturing the same |
| US20100102715A1 (en) * | 2008-10-23 | 2010-04-29 | Suh Min-Chul | Organic light emitting diode display device and method of manufacturing the same |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241313A (en) * | 2013-06-11 | 2014-12-24 | 业鑫科技顾问股份有限公司 | Panel for organic light-emitting diode |
| CN104241313B (en) * | 2013-06-11 | 2017-07-04 | 鸿富锦精密工业（深圳）有限公司 | Organic LED panel |
| CN103413819A (en) * | 2013-07-22 | 2013-11-27 | 京东方科技集团股份有限公司 | Organic light emitting display panel, pixel defining layer and manufacturing method thereof |
| WO2015010424A1 (en) * | 2013-07-22 | 2015-01-29 | 京东方科技集团股份有限公司 | Organic light emitting display panel, pixel defining layer, and manufacturing method therefor |
| US9373814B2 (en) | 2013-07-22 | 2016-06-21 | Boe Technology Group Co., Ltd | Organic light-emitting diode (OLED) display panel, pixel define layer (PDL) and preparation method thereof |
| CN103413819B (en) * | 2013-07-22 | 2016-08-31 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence display panel, pixel define layer and preparation method thereof |
| KR20150107584A (en) * | 2014-03-14 | 2015-09-23 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Method for integrated circuit patterning |
| KR101671592B1 (en) * | 2014-03-14 | 2016-11-01 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Method for integrated circuit patterning |
| CN104393192A (en) * | 2014-12-04 | 2015-03-04 | 京东方科技集团股份有限公司 | Pixel demarcation layer, manufacturing method, display panel and display device thereof |
| US9653526B2 (en) | 2014-12-04 | 2017-05-16 | Boe Technology Group Co., Ltd. | Pixel defining layer and manufacturing method thereof, display panel and display device |
| CN104659287A (en) * | 2015-03-12 | 2015-05-27 | 京东方科技集团股份有限公司 | Pixel defining layer and preparation method, display substrate and preparation method and display device |
| CN104659287B (en) * | 2015-03-12 | 2017-05-31 | 京东方科技集团股份有限公司 | Pixel defining layer and preparation method, display base plate and preparation method, display device |
| US10431639B2 (en) | 2016-11-30 | 2019-10-01 | Boe Technology Group Co., Ltd. | Display substrate, manufacturing method thereof and display device |
| WO2018099062A1 (en) * | 2016-11-30 | 2018-06-07 | 京东方科技集团股份有限公司 | Display substrate and preparation method, and display apparatus |
| CN108269833B (en) * | 2016-12-30 | 2022-06-28 | 乐金显示有限公司 | Organic light emitting display device |
| CN108269833A (en) * | 2016-12-30 | 2018-07-10 | 乐金显示有限公司 | Organic light-emitting display device |
| CN107204404A (en) * | 2017-04-11 | 2017-09-26 | 上海天马微电子有限公司 | Organic electroluminescent device |
| CN106941112B (en) * | 2017-05-05 | 2019-12-24 | 京东方科技集团股份有限公司 | Pixel defining layer, manufacturing method thereof and display substrate |
| CN106941112A (en) * | 2017-05-05 | 2017-07-11 | 京东方科技集团股份有限公司 | Pixel defining layer and its manufacture method, display base plate |
| WO2019071752A1 (en) * | 2017-10-12 | 2019-04-18 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate, manufacturing method therefor and oled display device |
| CN107845661A (en) * | 2017-10-26 | 2018-03-27 | 合肥鑫晟光电科技有限公司 | A kind of pixel defining layer and preparation method thereof, display panel |
| CN108987442A (en) * | 2018-06-29 | 2018-12-11 | 云谷（固安）科技有限公司 | Organnic electroluminescent device |
| CN108899345A (en) * | 2018-07-02 | 2018-11-27 | 京东方科技集团股份有限公司 | Pixel defines structure and its manufacturing method, display panel and display device |
| CN110164941A (en) * | 2019-05-31 | 2019-08-23 | 京东方科技集团股份有限公司 | Pixel defining layer and production method, display panel and production method, display device |
| WO2020238410A1 (en) * | 2019-05-31 | 2020-12-03 | 京东方科技集团股份有限公司 | Pixel definition layer and manufacturing method, display panel and manufacturing method, and display apparatus |
| CN110164941B (en) * | 2019-05-31 | 2022-05-10 | 京东方科技集团股份有限公司 | Pixel defining layer and manufacturing method thereof, display panel and manufacturing method thereof, and display device |
| CN111430300A (en) * | 2020-03-31 | 2020-07-17 | 京东方科技集团股份有限公司 | O L ED array substrate, preparation method thereof, display panel and display device |
| CN111430300B (en) * | 2020-03-31 | 2023-09-05 | 京东方科技集团股份有限公司 | OLED array substrate, preparation method thereof, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4012780A1 (en) | 2022-06-15 |
| US9065001B2 (en) | 2015-06-23 |
| JP2014099402A (en) | 2014-05-29 |
| EP2731139A2 (en) | 2014-05-14 |
| EP2731139B1 (en) | 2022-03-23 |
| JP6219685B2 (en) | 2017-10-25 |
| US20140131743A1 (en) | 2014-05-15 |
| EP2731139A3 (en) | 2018-01-03 |
| KR101537450B1 (en) | 2015-07-20 |
| CN102945855B (en) | 2016-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102945855A (en) | Luminescent display backplate, display device and preparation method of pixel definition layer | |
| CN102969333A (en) | Luminous display back plane, method for preparing pixel definition layer thereof and display device | |
| CN103413819B (en) | A kind of organic electroluminescence display panel, pixel define layer and preparation method thereof | |
| US9972665B2 (en) | Organic light emitting diode display panel, fabrication method thereof, and display device | |
| CN103811533B (en) | Organic electroluminescence display panel and display device | |
| CN106920828B (en) | A kind of organic electroluminescent display panel and preparation method | |
| CN102324432B (en) | Organic electroluminescent device having sloped banks and coating fabrication technique | |
| TWI622161B (en) | High resolution organic light-emitting diode devices, displays, and related methods | |
| CN104393192A (en) | Pixel demarcation layer, manufacturing method, display panel and display device thereof | |
| CN103311269A (en) | OLED (organic light emitting diode) pixel limit structure and manufacturing method thereof | |
| CN103887319A (en) | Large Area Organic Light Emitting Diode Display and Method for Manufacturing the Same | |
| CN104241329A (en) | Display panel provided with pixel defining layer and manufacturing method of pixel defining layer | |
| CN104465671A (en) | Display substrate, manufacturing method of display substrate and display device | |
| KR20140067645A (en) | Organic electro-luminescent device and method of fabricating the same | |
| KR20140067265A (en) | Organic electro-luminescent device and method of fabricating the same | |
| CN104638198A (en) | Ink for display device manufacturing, method for manufacturing the same, and method for manufacturing the display device | |
| CN103346123A (en) | Pixel defining layer, manufacturing method thereof, display substrate and display device | |
| JP2004063359A (en) | Electroluminescence display and its manufacturing method | |
| CN1637615A (en) | Flat display device and method of manufacturing the same | |
| CN104183622A (en) | Organic light emitting device and manufacturing method thereof | |
| CN109346506A (en) | A kind of array substrate and preparation method thereof, display panel | |
| CN103137904A (en) | Method of manufacturing organic electroluminescent device | |
| CN107546246A (en) | Flexible OLED display part and preparation method | |
| CN105182652A (en) | Pixel separating wall, display substrate and manufacturing method thereof and display device | |
| CN109545829A (en) | A kind of array substrate and preparation method thereof, display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |