CN102725836A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102725836A
CN102725836A CN2011800071016A CN201180007101A CN102725836A CN 102725836 A CN102725836 A CN 102725836A CN 2011800071016 A CN2011800071016 A CN 2011800071016A CN 201180007101 A CN201180007101 A CN 201180007101A CN 102725836 A CN102725836 A CN 102725836A
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CN
China
Prior art keywords
bonding wire
electrode pad
semiconductor device
component metal
principal component
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Pending
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CN2011800071016A
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English (en)
Inventor
伊藤慎吾
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Publication of CN102725836A publication Critical patent/CN102725836A/zh
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

本发明的半导体装置，其特征在于，具备：具有电极焊盘的半导体元件，搭载半导体元件、形成有电接合部件的基材，对电极焊盘和电接合部件进行电连接的焊线，半导体元件和焊线电极焊盘的主成分金属为与焊线的主成分金属相同的金属，或者与焊线的主成分金属不同，电极焊盘的主成分金属和焊线的主成分金属不同时，在封装树脂的后固化温度下，上述焊线的主成分金属与电极焊盘的主成分金属在上述焊线和上述电极焊盘的接合部相互扩散的速度小于在后固化温度下金（Au）与铝（Al）在铝（Al）和金（Au）的接合部相互扩散的速度。

Description

半导体装置
技术领域
本发明涉及半导体装置。特别涉及用焊线将半导体元件的电极焊盘（electrode pad）电接合、用热固化性树脂组合物的固化物封装半导体元件和焊线的半导体装置。
背景技术
以往，二极管、晶体管、集成电路等电子部件主要使用环氧树脂组合物的固化物进行封装。特别是在集成电路中，使用配合了环氧树脂、酚醛树脂系固化剂、以及熔融二氧化硅、晶体二氧化硅等无机填充材料的耐热性、耐湿性优异的环氧树脂组合物。但是近年来，随着电子设备的小型化、轻质化、高性能化的市场动向，半导体元件的高集成化逐年发展，并且，促进了半导体装置的表面贴装化，其中对半导体元件的封装中使用的环氧树脂组合物的要求也变得越发严格。
另一方面，使用半导体元件的环境条件也变得苛刻，还要求提高焊线的接合可靠性。特别是对于汽车中使用的半导体元件，要求提高电极焊盘与焊线的接合部的高温可靠性。
例如，在专利文献1中，记载了通过向金合金细线中添加并用银，并以0.005～0.8重量%的范围含有Mn，从而能够抑制加热后接合强度的降低。
另外，在专利文献2中，记载了通过优化焊线的合金化添加元素，从而提高焊线与电极的接合部的长期可靠性，实现高密度化、细线化、特性波动的减少等。
现有技术文献
专利文献
专利文献1:日本特开平9-272931号公报
专利文献2:日本特开2003-133362号公报
发明内容
然而，近年来，使用半导体元件的环境条件变得更加苛刻，要求进一步提高高温可靠性。
例如，对于汽车，存在非常高温的环境，要求特别高的高温保存特性、高温工作特性。由柯肯德尔效应导致的空洞产生会引起高温保存时、高温工作时的金引线、铝衬垫的接合不良，但通过利用合金引线使空洞生长变慢而进行的改进（参照例如专利文献1、2）无法充分令人满意。
本发明提供一种用焊线将半导体元件的电极焊盘电接合、且用热固化性树脂组合物的固化物封装半导体元件和焊线的半导体装置，该半导体装置的高温保存特性、高温工作特性优异。
本发明的半导体装置，其特征在于，具备：
具有电极焊盘的半导体元件，
搭载上述半导体元件、形成有电接合部件的基材，
对上述电极焊盘与上述电接合部件进行电连接的焊线，
封装上述半导体元件和上述焊线、由热固化性树脂组合物的固化物构成的封装树脂，
上述电极焊盘的主成分金属为与上述焊线的主成分金属相同的金属，或者，与上述焊线的主成分金属不同，
上述电极焊盘的主成分金属和上述焊线的主成分金属不同时，在上述封装树脂的后固化温度下，上述焊线的主成分金属与上述电极焊盘的主成分金属在上述焊线和上述电极焊盘的接合部相互扩散的速度小于在上述后固化温度下金（Au）与铝（Al）在铝（Al）与金（Au）的接合部相互扩散的速度。
根据本发明，能够得到用焊线将半导体元件的电极焊盘电接合、且用热固化性树脂组合物的固化物封装半导体元件和焊线的半导体装置，该半导体装置的高温保存特性、高温工作特性优异。
附图说明
上述的目的以及其他目的、特征和优点通过以下所述的优选的实施方式及其附带的以下的附图进一步明确。
图1是对本发明涉及的半导体装置的一个例子示出剖面结构的图。
图2是对本发明涉及的单面封装型的半导体装置的一个例子示出剖面结构的图。
具体实施方式
以下，对本发明的半导体装置进行详细说明。
本发明的半导体装置，其特征在于，具备：具有电极焊盘的半导体元件，搭载半导体元件、形成有电接合部件的基材，电连接电极焊盘与电接合部件的焊线，封装半导体元件和焊线、并由热固化性树脂组合物的固化物构成的封装树脂，电极焊盘的主成分金属为与焊线的主成分金属相同的金属，或者，与焊线的主成分金属不同，电极焊盘的主成分金属与焊线的主成分金属不同时，在封装树脂的后固化温度下，焊线的主成分金属与电极焊盘的主成分金属在焊线和电极焊盘的接合部相互扩散的速度小于在后固化温度下金（Au）与铝（Al）在铝（Al）和金（Au）的接合部相互扩散的速度。以下，对各构成进行详细说明。
本发明中使用的半导体元件的电极焊盘的主成分金属为与焊线的主成分金属相同的金属，或者，为与焊线的主成分金属不同的、且半导体元件的电极焊盘的主成分金属和焊线的主成分金属的合金生长速度比金和铝的合金生长速度慢的金属。
本发明中，相对于电极焊盘中含有的金属成分整体，电极焊盘的主成分金属优选在电极焊盘中含有95质量%以上，更优选含有98质量%以上，进一步优选含有99质量%。另外，本发明中，相对于焊线中含有的金属成分整体，焊线的主成分金属优选在焊线中含有90质量%以上，更优选含有95质量%以上，进一步优选含有98质量%。
另外，本发明中，合金生长速度是指在封装树脂的后固化温度下使2种不同的金属材料接触时，金属材料中含有的金属成分相互扩散的速度。通过金属成分相互扩散，从而在不同种类金属材料的接合部形成合金。
半导体元件的电极焊盘的主成分金属和焊线的主成分金属的合金生长速度与金和铝的合金生长速度的比较能够通过比较封装树脂的后固化温度下的金属的扩散系数的差来进行。具体而言，首先，在封装树脂的后固化温度下使电极焊盘的主成分金属与焊线的主成分金属接触，求出电极焊盘的主成分金属扩散到焊线的主成分金属中的扩散系数（DP-W）与焊线的主成分金属扩散到电极焊盘的主成分金属中的扩散系数（DW-P）的差（D1＝｜DP-W－DW-P｜）。另外，在封装树脂的后固化温度下使铝与金接触，求出铝扩散到金中的扩散系数（DAl-Au）与金扩散到铝中的扩散系数（DAu-Al）的差（D2＝｜DP-W－DW-P｜）。本发明中，满足D1＜D2的关系即可。作为封装树脂的后固化温度，例如可以设为175℃。
另外，可以用下述的方法测定合金生长速度。把用焊线将半导体元件的电极焊盘电接合、且用热固化性树脂组合物的固化物封装半导体元件和焊线的半导体装置以规定时间、规定温度（例如175℃、8小时）进行高温处理后，切断半导体元件的电极焊盘上的引线接合部进行断面研磨，用激光显微镜测定合金部分的生长厚度。将用高温处理时间除生长厚度而得到的值作为合金生长速度。
本发明中，基材可以是具有芯片焊盘（die pad）部的引线框架，也可以是电路基板。引线框架中，可以形成输入输出用端子、电源用端子等外部连接端子作为电接合部件。另外，电路基板中，可以形成电极焊盘作为电接合部件。
焊线用于对设置于引线框架或电路基板的外部连接端子与半导体元件的电极焊盘进行电连接。对于半导体元件，为了提高集成度，要求窄衬垫间距、小引线直径，具体而言，要求30μm以下、进一步优选为25μm以下的引线直径。本发明的半导体装置中使用的焊线优选为30μm以下、进一步优选为25μm以下的引线直径，且优选为15μm以上的引线直径。本发明的半导体装置中使用的焊线没有特别限定，优选以金（Au）、银（Ag）、或Cu（铜）为主成分金属。更具体而言，从球形状稳定性和接合强度的角度考虑，优选由含有0.0005～2.0质量%的选自稀土类元素、Ag、Be、Ca、Cu、Ga、Ge、In、Mg、Os、Pd、Rh、Ru、Sn以及Y中的至少1种元素的、金纯度为98质量%以上的金合金构成。从高温保存特性、高温工作特性的观点考虑，更优选金纯度为99质量%（2N）以上，特别优选为99.99质量%（4N）以上。应予说明，在此所说的“纯度”是指焊线中的金相对于构成焊线的金属成分整体的含量。
半导体元件的电极焊盘通常使用将Al作为主成分的金属，但与焊线的金合金之间会产生合金（金属间化合物），在100℃以上的高温保存时、高温工作时可观察到合金的生长。此时，因相互扩散速度的不同引起柯肯德尔效应从而导致空洞的产生、生长，发生电阻值的上升、断线。本发明中，由于使半导体元件的电极焊盘的主成分金属与焊线的主成分金属相同，或者，使其为半导体元件的电极焊盘的主成分金属和焊线的主成分金属的合金生长速度比金和铝的合金生长速度慢的金属，因此能够防止柯肯德尔空洞的产生、生长，显著改善高温保存时、高温工作时的寿命。
焊线的主成分金属为金时，优选半导体元件的电极焊盘以钯（Pd）或金（Au）为主成分金属，从耐湿可靠性的角度出发，更优选由钯（Pd）或金（Au）构成。由于Pd与作为焊线的主成分的Au的合金生长速度比Au和Al的合金生长速度慢，柯肯德尔空洞的生长慢，所以高温保存时、高温工作时的寿命长。另外，由于Au与作为焊线的主成分的Au相同，所以基本上没有合金生长，不产生柯肯德尔空洞。
焊线的主成分金属为铜时，优选半导体元件的电极焊盘以钯（Pd）或金（Au）为主成分金属，从耐湿可靠性的角度出发，更优选由钯（Pd）或金（Au）构成。由于Pd、Au与作为焊线的主成分的Cu的合金生长速度比Au和Al的合金生长速度慢，柯肯德尔空洞的生长慢，所以高温保存时、高温工作时的寿命长。
焊线的主成分金属为银时，优选半导体元件的电极焊盘的金属以钯（Pd）或金（Au）为主成分金属，从耐湿可靠性的角度出发，更优选由钯（Pd）或金（Au）构成。由于Pd、Au与作为焊线的主成分的Ag的合金生长速度比Au与Al的合金生长速度慢，柯肯德尔空洞的生长慢，所以高温保存时、高温工作时的寿命长。
作为电极焊盘中含有的除主成分金属以外的金属，可以使用选自Al、Cu、Cr、Ti、Si中的至少1种，优选电极焊盘中含有0～2质量%。
接下来，对本发明的半导体装置的制造中使用的、通过成型、固化来构成封装部件的热固化性树脂组合物进行说明。本发明的半导体装置的制造中使用的热固化性树脂组合物没有特别限制，含有单独或者2种以上的如下的热固化树脂以及固化剂和固化催化剂，所述热固化树脂是脲醛树脂、蜜胺树脂、酚醛树脂、间苯二酚树脂、环氧树脂、聚氨酯树脂、乙酸乙烯酯树脂、聚乙烯醇树脂、丙烯酸树脂、乙烯基聚氨酯树脂、硅酮树脂、α-烯烃马来酸酐树脂、聚酰胺树脂、聚酰亚胺树脂等，优选为含有（A）环氧树脂、（B）固化剂、（C）无机填充材料的环氧树脂组合物。以下，对本发明的半导体装置的制造中使用的环氧树脂组合物的各构成成分进行说明。
在本发明的半导体装置的制造中使用的环氧树脂组合物中可以使用（A）环氧树脂。（A）环氧树脂为在1分子内具有2个以上环氧基的单体、低聚物、聚合物全部，它的分子量、分子结构没有特别限定，例如，可举出联苯型环氧树脂、双酚型环氧树脂、茋型环氧树脂等结晶性环氧树脂；苯酚线型酚醛型环氧树脂、甲酚线型酚醛型环氧树脂等线型酚醛型环氧树脂；三苯酚甲烷型环氧树脂、烷基改性三苯酚甲烷型环氧树脂等多官能环氧树脂；具有亚苯基骨架的苯酚芳烷基型环氧树脂、具有亚联苯基骨架的苯酚芳烷基型环氧树脂等芳烷基型环氧树脂；二羟基萘型环氧树脂；将二羟基萘的二聚体进行缩水甘油醚化而得到的环氧树脂等萘酚型环氧树脂；异氰脲酸三缩水甘油酯、单烯丙基二缩水甘油基异氰脲酸酯等含有三嗪核的环氧树脂；二环戊二烯改性苯酚型环氧树脂等桥环状烃化合物改性苯酚型环氧树脂等，它们可以单独使用1种，也可以并用2种以上。从进一步提高高温保存特性、高温工作特性的观点考虑，优选三苯酚甲烷型环氧树脂、烷基改性三苯酚甲烷型环氧树脂等多官能环氧树脂，特别优选三苯酚甲烷型环氧树脂。
作为（A）环氧树脂整体的配合比例的下限值没有特别限定，相对于环氧树脂组合物整体，优选为3质量%以上，更优选为5质量%以上。如果（A）环氧树脂整体的配合比例在上述范围内，则不担心会引起因粘度上升而导致的引线断裂。另外，作为（A）环氧树脂整体的配合比例的上限值没有特别限定，相对于环氧树脂组合物整体，优选为15质量%以下，更优选为13%质量以下。如果环氧树脂整体的配合比例的上限值在上述范围内，则不担心会引起因吸湿率增加而导致的耐湿可靠性降低等。
在本发明的半导体装置的制造中使用的环氧树脂组合物中，可以使用（B）固化剂。作为（B）固化剂，例如可以大致分为加聚型的固化剂、催化型的固化剂、缩合型的固化剂这3种类型。
作为加聚型的固化剂，例如可举出包括二亚乙基三胺（DETA）、三亚乙基四胺（TETA）、间苯二甲胺（MXDA）等脂肪族多胺，二氨基二苯甲烷（DDM）、间苯二胺（MPDA）、二氨基二苯砜（DDS）等芳香族多胺，双氰胺（DICY），有机酸二酰肼等的多胺化合物；包括六氢邻苯二甲酸酐（HHPA）、甲基四氢邻苯二甲酸酐（MTHPA）等脂环族酸酐，偏苯三酸酐（TMA）、均苯四甲酸二酐（PMDA）、二苯甲酮四酸二酐（BTDA）等芳香族酸酐等的酸酐；线型酚醛清漆型酚醛树脂、酚聚合物等多酚化合物；聚硫化物、硫代酸酯、硫醚等聚硫醇化合物；异氰酸酯预聚物、封端异氰酸酯等异氰酸酯化合物；含有羧酸的聚酯树脂等有机酸类等。
作为催化型的固化剂，例如可举出苄基二甲胺（BDMA）、2,4,6-三(二甲氨基甲基)苯酚（DMP-30）等叔胺化合物；2-甲基咪唑、2-乙基-4-甲基咪唑（EMI24）等咪唑化合物；BF3配位化合物等路易斯酸等。
作为缩合型的固化剂，例如可举出线型酚醛清漆型酚醛树脂、甲阶型酚醛树脂等酚醛树脂系固化剂；含有羟甲基的尿素树脂之类的尿素树脂；含有羟甲基的蜜胺树脂之类的蜜胺树脂等。
在它们中，从耐燃性、耐湿性、电气特性、固化性、保存稳定性等平衡的角度考虑，优选酚醛树脂系固化剂。酚醛树脂系固化剂是指在一分子内具有2个以上酚羟基的单体、低聚物、聚合物全部，对其分子量、分子结构没有特别限定，例如可举出苯酚线型酚醛清漆树脂、甲酚线型酚醛清漆树脂等线型酚醛清漆型树脂；三苯酚甲烷型酚醛树脂等多官能型酚醛树脂；萜烯改性酚醛树脂、二环戊二烯改性酚醛树脂等改性酚醛树脂；具有亚苯基和/或亚联苯基骨架的苯酚芳烷基树脂、具有亚苯基和/或亚联苯基骨架的萘酚芳烷基树脂等芳烷基型树脂；双酚A、双酚F等双酚化合物等，它们可以单独使用1种，也可以并用2种以上。从进一步提高高温保存特性、高温工作特性的观点考虑，优选三苯酚甲烷型酚醛树脂等多官能型酚醛树脂，特别优选三苯酚甲烷型酚醛树脂。
对于（B）固化剂整体的配合比例的下限值，没有特别限定，在全部环氧树脂组合物中，优选为0.8质量%以上，更优选为1.5质量%以上。如果配合比例的下限值在上述范围内，则能够得到充分的流动性。另外，对于（B）固化剂整体的配合比例的上限值，也没有特别限定，在全部环氧树脂组合物中，优选为10质量%以下，更优选为8质量%以下。如果配合比例的上限值在上述范围内，则不担心会引起因吸湿率增加而导致的耐湿可靠性的降低等。
另外，作为使用酚醛树脂系固化剂作为（B）固化剂时的环氧树脂与酚醛树脂系固化剂的配合比例，优选全部环氧树脂的环氧基数（EP）与全部酚醛树脂系固化剂的酚羟基数（OH）的当量比（EP）/（OH）为0.8～1.3。如果当量比在该范围，则不担心会引起半导体封装用环氧树脂组合物的固化性降低、或树脂固化物的物性降低等。
在本发明的半导体装置的制造中使用的环氧树脂组合物中，可以使用（C）无机填充材料。作为（C）无机填充材料，可以使用通常在半导体封装用环氧树脂组合物中使用的无机填充材料，例如，可举出熔融二氧化硅、晶体二氧化硅、滑石、氧化铝、钛白粉、氮化硅等。最优选使用的无机填充材料为熔融二氧化硅。这些（C）无机填充材料可以单独使用也可以混合使用。另外，可以利用偶联剂对这些（C）无机填充材料进行表面处理。为了改善流动性，作为填充材料的形状，优选尽量为圆球形，且粒度分布宽广。另外，从适用于引线间距窄的半导体装置的观点考虑，优选（C）无机填充材料含有99.9质量%以上的粒径为引线间距宽度2/3以下的粒子。通过在该范围内，能够抑制环氧树脂组合物的未填充、粗大粒子夹在引线间而引起的引线偏移。这样的（C）无机填充材料可以直接使用市售的无机填充材料、或者通过将它们中的多种混合或筛分等进行调整来得到。另外，可以使用市售的激光式粒度分布计（例如，（株）岛津制作所制，SALD-7000等）等来测定无机填充材料的粒度分布。
（C）无机填充材料的含有比例没有特别限定，相对于环氧树脂组合物整体，（C）无机填充材料的含有比例的下限值优选为82质量%以上，更优选为85质量%以上。只要不低于上述下限值的范围，就能得到低吸湿性、低热膨胀性，所以不会担心耐湿可靠性变得不充分。另外，相对于环氧树脂组合物整体，（C）无机填充材料的含有比例的上限值优选为92质量%以下，更优选为89质量%以下。只要不超过上述上限值的范围，就不会担心流动性降低而成型时产生填充不良等，或产生因高粘度化而导致的半导体装置内的引线偏移等不好的情况。
在本发明的半导体装置的制造中使用的环氧树脂组合物中，可以进一步使用（D）固化促进剂。（D）固化促进剂只要促进环氧树脂的环氧基与固化剂的官能团（例如，酚醛树脂系固化剂的酚羟基）的交联反应即可，可以使用通常在环氧树脂组合物中使用的固化促进剂。例如，可举出1,8-二氮杂双环[5,4,0]十一碳烯-7等二氮杂双环烯烃及其衍生物；三苯基膦、甲基二苯基膦等有机膦类；2-甲基咪唑等咪唑化合物；四苯基·四苯基硼酸酯等四取代·四取代硼酸酯；膦化合物与醌化合物的加成物等，它们可以单独使用1种，也可以并用2种以上。
作为（D）固化促进剂的配合比例的下限值没有特别限定，相对于环氧树脂组合物整体，优选为0.05质量%以上，更优选为0.1质量%以上。如果（D）固化促进剂的配合比例的下限值在上述范围内，则不担心会引起固化性的降低。另外，作为（D）固化促进剂的配合比例的上限值没有特别限定，相对于环氧树脂组合物整体，优选为1质量%以下，更优选为0.5质量%以下。如果（D）固化促进剂的配合比例的上限值在上述范围内，则不担心会引起流动性的降低。
对于本发明的半导体装置的制造中使用的环氧树脂组合物，可以进一步根据需要适当配合氢氧化锆等防铝腐蚀剂；氧化铋水合物等无机离子交换体；γ-环氧丙氧基丙基三甲氧基硅烷、3-巯基丙基三甲氧基硅烷、3-氨基丙基三甲氧基硅烷等偶联剂；炭黑、铁红等着色剂；硅酮橡胶等低应力成分；巴西棕榈蜡等天然蜡、合成蜡、硬脂酸锌等高级脂肪酸及其金属盐类或石蜡等脱模剂；抗氧化剂等各种添加剂。并且，可以根据需要用环氧树脂或酚醛树脂预处理无机填充材料来使用，作为处理的方法，有使用溶剂混合后除去溶剂的方法、或直接添加到无机填充材料中，使用混合机进行混合处理的方法等。
本发明的半导体装置的制造中使用的环氧树脂组合物，可以使用：将上述各成分使用例如混合机等进行常温混合而得的组合物，其后进一步用辊、捏合机、挤出机等混炼机进行熔融混炼、冷却后粉碎而得的组合物等，根据需要适当调整分散度、流动性等而得的组合物。
接着，对本发明的半导体装置进行说明。本发明的半导体装置是通过以传递模塑、压缩模塑、注射模塑等以往的成型方法将热固化性树脂组合物固化成型，利用该固化物封装半导体元件等电子部件和焊线等而得到的。应予说明，利用传递模塑、压缩模塑将半导体封装用环氧树脂组合物成型固化时，环氧树脂组合物可以直接使用粉末或颗粒状的组合物，也可以使用通过打片成型而成片的组合物。以传递模塑等成型方法被封装的半导体装置可以直接搭载于电子设备等，或者在80℃～200℃左右的温度下经10分钟～10小时左右的时间完全固化后搭载于电子设备等。
作为本发明中使用的半导体元件，没有特别限定，例如，可举出集成电路、大规模集成电路、晶体管、晶闸管、二极管、固体摄像元件等。
作为本发明的半导体装置的形态，没有特别限定，例如可举出双列直插式封装（DIP）、带引线的塑料芯片载体（PLCC）、四侧引脚扁平封装（QFP）、小外形封装（SOP）、J型引脚小外形封装（SOJ）、薄型小外形封装（TSOP）、薄四方扁平封装（TQFP）、带载封装（TCP）、球栅阵列（BGA）、芯片尺寸封装（CSP）等。
图1是对本发明涉及的半导体装置的一个例子示出剖面结构的图。在芯片焊盘3上介由芯片焊接材料固化体2固定半导体元件1。半导体元件1的电极焊盘和引线框架5的端子（未图示）之间通过焊线4来连接。半导体元件1被热固化性树脂组合物的固化体6封装。
图2是对本发明涉及的单面封装型的半导体装置的一个例子示出剖面结构的图。在电路基板8的表面，在形成了阻焊剂7的层的层叠体的阻焊剂7上介由芯片焊接材料固化体2固定半导体元件1。为了使半导体元件1与电路基板8导通，利用显影法除去电极焊盘上的阻焊剂7以使电路基板8的电极焊盘露出。半导体元件1的电极焊盘和电路基板8的电极焊盘之间通过焊线4连接。用封装用树脂组合物的固化体6仅对电路基板8的搭载有半导体元件1的单面侧进行封装。电路基板8上的电极焊盘与电路基板8上的非封装面侧的焊锡球9在内部接合。
这样得到的本发明的半导体装置的高温保存特性、高温工作特性优异，即便在200℃保管2000小时后也不会产生工作不良，另外，在175℃能够良好地工作1000小时以上。因此，即便在120℃以上的高温环境下也能够使用，尤其是，能够适用于汽车用途的半导体装置。
以上，对本发明的实施方式进行了叙述，但这些是本发明的例示，也可以采用上述以外的各种构成。
例如，图1、2中示出了在引线框架的芯片焊盘部上或电路基板上搭载一个半导体元件的例子，也可以在芯片焊盘部上或电路基板上搭载多个半导体元件。
另外，作为本发明的半导体装置的其他方式，例如可举出如下的半导体装置：具备具有芯片焊盘部的引线框架或电路基板、搭载在引线框架的芯片焊盘部上或电路基板上的一个以上的半导体元件、对设置在引线框架或电路基板的电接合部件与设置在半导体元件的电极焊盘进行电连接的焊线、封装半导体元件和上述焊线的封装部件；半导体元件的上述电极焊盘的主成分金属为与焊线的主成分金属相同的金属，或者，为与上述焊线的主成分金属不同、且半导体元件的电极焊盘的主成分金属和焊线的主成分金属的合金生长速度比金和铝的合金生长速度慢的金属；封装部件由含有（A）环氧树脂、（B）固化剂、（C）无机填充材料的环氧树脂组合物的固化物构成。
实施例
以下示出本发明的实施例，但本发明并不限于这些实施例。配合比例以质量份计。对于在实施例、比较例中使用的环氧树脂组合物的各成分，如下所示。
（环氧树脂）
邻甲酚线型酚醛清漆型环氧树脂（E-1：日本化药公司制，EOCN1020，软化点55℃，环氧当量196g/eq）
具有亚联苯基骨架的苯酚芳烷基型环氧树脂（E-2：日本化药公司制，NC3000，软化点58℃，环氧当量274g/eq）
三苯酚甲烷型环氧树脂（E-3：Japan Epoxy Resins公司制，E-1032H60，软化点59℃，环氧当量171g/eq）
（固化剂）
苯酚线型酚醛清漆树脂（H-1：住友电木株式会社制，PR-HF-3，软化点80℃，羟基当量104g/eq）
具有亚联苯基骨架的苯酚芳烷基型树脂（H-2：明和化成公司制，MEH-7851SS，软化点65℃，羟基当量203g/eq）
三苯酚甲烷型酚醛树脂（H-3：明和化成公司制MEH-7500，软化点110℃，羟基当量97g/eq）
（无机填充材料）
熔融球形二氧化硅（株式会社Micron制，HS-104，平均粒径26.5μm，105μm以上的粒子的比例为1%以下）
（其他添加剂）
固化促进剂：三苯基膦（TPP）
硅烷偶联剂（环氧硅烷：γ-环氧丙氧基丙基三甲氧基硅烷）
着色剂：炭黑
脱模剂：巴西棕榈蜡
环氧树脂组合物的制造
（实施例1）
Figure BDA00001930848600131
使用混合机将上述成分在常温下混合，接着在70～100℃下进行辊混炼，冷却后粉碎，得到环氧树脂组合物。
（实施例2～7、比较例1～2）
根据表1中记载的环氧树脂组合物的配合，与实施例1相同地得到环氧树脂组合物。
半导体装置的制造
使用低压传递成型机（Kohtaki Precision Machine株式会社制，KTS-125），在成型温度175℃、注入压力6.9MPa、固化时间120秒的条件下，利用环氧树脂组合物将硅芯片等封装成型，得到16引脚SOP（封装尺寸7.2mm×11.5mm，厚度1.95mm，在下述所示的TEG（TestElement Group）的钝化开口部2处地方引线接合Au引线（住友金属矿山公司制NL-4，Au 99.99质量%，25μmφ），与引线框架的内部引线连接，将其作为1个单元，将3个单元串联连接作为1个评价电路。）后，作为后固化，在175℃、加热处理8小时。
TEG 1：尺寸3.5mm×3.5mm，厚度0.35mm，电极焊盘：Pd-0.6μm厚，115μm×125μm，钝化开口部：95μm×100μm×2处地方
TEG 2：尺寸3.5mm×3.5mm，厚度0.35mm，电极焊盘：Au-0.6μm厚，115μm×125μm，钝化开口部：95μm×100μm×2处地方
TEG 3：尺寸3.5mm×3.5mm，厚度0.35mm，电极焊盘：Al（99.5质量%）-Cu（0.5质量%）合金-0.6μm厚，115μm×125μm，钝化开口部：95μm×100μm×2处地方。
对各实施例和各比较例中得到的环氧树脂组合物和半导体装置进行以下评价。将得到的结果示于表1。
评价方法
螺旋流动：使用低压传递成型机（Kohtaki Precision Machine株式会社制，KTS-15），在模具温度175℃、注入压力6.9MPa、固化时间120秒的条件下，向基于ANSI/ASTM D 3123-72的螺旋流动测定用的模具中注入环氧树脂组合物，测定流动长度。单位是cm。
合金生长速度：对后固化（175℃、8小时）处理后的16引脚SOP的引线接合部用截面抛光机（日本电子制，SM-09020CP）进行断面研磨，用激光显微镜（KEYENCE公司制，VK-9700）测定合金部分的厚度。
高温保存特性：对15个后固化（175℃、8小时）处理后的16引脚SOP封装（15个评价电路），用数字万用表（Advantest公司制，ADVANTEST R6441A）测定评价电路的电阻值并进行记录。进行高温保存试验（200℃、2000小时、无外加电压）后，再次用数字万用表测定电路的电阻值。将评价电路的电阻值相对于初始值增加了20%的封装判定为不良。不良封装的个数为n个时，表示为n/15。
高温工作特性：对15个后固化（175℃、8小时）处理后的16引脚SOP封装（15个评价电路），用数字万用表（Advantest公司制，ADVANTEST R6441A）测定评价电路的电阻值并进行记录。进行高温工作试验（在175℃下向电路中通0.1A的直流电流1000小时。）后，再次用数字万用表测定电路的电阻值。将评价电路的电阻值相对于初始值增加了20%的封装判定为不良。不良封装的个数为n个时，表示为n/15。
[表1]
Figure BDA00001930848600151
从表1可知，实施例1～7的高温保存特性、高温工作特性优异。

Claims (10)

1.一种半导体装置，其特征在于，具备：
具有电极焊盘的半导体元件，
搭载所述半导体元件、形成有电接合部件的基材，
对所述电极焊盘和所述电接合部件进行电连接的焊线，
封装所述半导体元件和所述焊线、并由热固化性树脂组合物的固化物构成的封装树脂；
所述电极焊盘的主成分金属为与所述焊线的主成分金属相同的金属，或者与所述焊线的主成分金属不同，
所述电极焊盘的主成分金属与所述焊线的主成分金属不同时，在所述封装树脂的后固化温度下，所述焊线的主成分金属与所述电极焊盘的主成分金属在所述焊线和所述电极焊盘的接合部相互扩散的速度小于在所述后固化温度下金（Au）与铝（Al）在铝（Al）和金（Au）的接合部相互扩散的速度。
2.根据权利要求1所述的半导体装置，其中，所述电极焊盘的主成分金属为金（Au）、或钯（Pd），
所述焊线的主成分金属为金（Au）、铜（Cu）或银（Ag）。
3.根据权利要求1或2所述的半导体装置，其用于汽车。
4.根据权利要求1～3中任1项所述的半导体装置，其中，相对于构成所述焊线的金属成分整体，所述焊线含有99质量%以上的金（Au）。
5.根据权利要求4所述的半导体装置，其中，所述电极焊盘由金（Au）构成。
6.根据权利要求4所述的半导体装置，其中，所述电极焊盘由钯（Pd）构成。
7.根据权利要求1～6中任1项所述的半导体装置，其中，所述基材为具有芯片焊盘部的引线框架，
在所述芯片焊盘部上搭载有所述半导体元件。
8.根据权利要求1～7中任1项所述的半导体装置，其中，所述封装树脂为含有（A）环氧树脂、（B）固化剂、（C）无机填充材料的环氧树脂组合物的固化体。
9.根据权利要求8所述的半导体装置，其中，所述（A）环氧树脂为多官能环氧树脂。
10.根据权利要求1～9中任1项所述的半导体装置，其中，所述封装树脂的所述后固化温度为175℃。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107266857A (zh) * 2016-03-30 2017-10-20 旭化成株式会社 热固性树脂组合物
CN111719064A (zh) * 2015-08-12 2020-09-29 日铁新材料股份有限公司 半导体装置用接合线

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10865332B2 (en) * 2011-09-29 2020-12-15 Showa Denko Materials Co., Ltd. Epoxy resin composition and electronic component device
US9147645B2 (en) * 2012-03-23 2015-09-29 Sumitomo Bakelite Co., Ltd. Semiconductor device
JP6167227B2 (ja) 2014-04-21 2017-07-19 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP6037464B2 (ja) * 2014-05-29 2016-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 電気機器の寿命を予測する装置及び方法
JP5985127B1 (ja) * 2015-06-15 2016-09-06 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
MY162048A (en) 2015-06-15 2017-05-31 Nippon Micrometal Corp Bonding wire for semiconductor device
EP3136435B1 (en) 2015-07-23 2022-08-31 Nippon Micrometal Corporation Bonding wire for semiconductor device
TW202143414A (zh) * 2015-12-15 2021-11-16 日商日鐵化學材料股份有限公司 半導體裝置用接合線

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59210656A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
US5391924A (en) * 1992-09-14 1995-02-21 Kabushiki Kaisha Toshiba Plastic package type semiconductor device
CN1311526A (zh) * 2000-02-22 2001-09-05 国际商业机器公司 制备用于电连接的导电座的方法及形成的导电座
CN1314225A (zh) * 2000-02-18 2001-09-26 德克萨斯仪器股份有限公司 铜镀层集成电路焊点的结构和方法
JP2003201386A (ja) * 2001-10-30 2003-07-18 Hitachi Chem Co Ltd 封止用エポキシ樹脂成形材料及び電子部品装置
US20050073057A1 (en) * 2001-12-14 2005-04-07 Stmicroelectronics S.R.I. Semiconductor electronic device and method of manufacturing thereof
CN1661787A (zh) * 2004-02-23 2005-08-31 三星Techwin株式会社 引线框及制造具有所述引线框的半导体封装的方法
CN101208799A (zh) * 2005-06-30 2008-06-25 英特尔公司 电迁移抗性和顺应导线互连、纳米焊料成分、由其制成的系统以及组装焊接封装的方法
CN101290930A (zh) * 2007-04-19 2008-10-22 英飞凌科技股份公司 包含半导体芯片叠层的半导体器件及其制造方法
CN101527287A (zh) * 2008-09-19 2009-09-09 杰群电子科技股份有限公司 打线结构及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS615562A (ja) * 1984-06-20 1986-01-11 Hitachi Ltd 半導体装置
TW582100B (en) * 2002-05-30 2004-04-01 Fujitsu Ltd Semiconductor device having a heat spreader exposed from a seal resin
KR100618054B1 (ko) * 2005-05-09 2006-08-30 엠케이전자 주식회사 금 합금 본딩 와이어
JP2007123506A (ja) * 2005-10-27 2007-05-17 Kyocera Corp 回路モジュールの製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59210656A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
US5391924A (en) * 1992-09-14 1995-02-21 Kabushiki Kaisha Toshiba Plastic package type semiconductor device
CN1314225A (zh) * 2000-02-18 2001-09-26 德克萨斯仪器股份有限公司 铜镀层集成电路焊点的结构和方法
CN1311526A (zh) * 2000-02-22 2001-09-05 国际商业机器公司 制备用于电连接的导电座的方法及形成的导电座
JP2003201386A (ja) * 2001-10-30 2003-07-18 Hitachi Chem Co Ltd 封止用エポキシ樹脂成形材料及び電子部品装置
US20050073057A1 (en) * 2001-12-14 2005-04-07 Stmicroelectronics S.R.I. Semiconductor electronic device and method of manufacturing thereof
CN1661787A (zh) * 2004-02-23 2005-08-31 三星Techwin株式会社 引线框及制造具有所述引线框的半导体封装的方法
CN101208799A (zh) * 2005-06-30 2008-06-25 英特尔公司 电迁移抗性和顺应导线互连、纳米焊料成分、由其制成的系统以及组装焊接封装的方法
CN101290930A (zh) * 2007-04-19 2008-10-22 英飞凌科技股份公司 包含半导体芯片叠层的半导体器件及其制造方法
CN101527287A (zh) * 2008-09-19 2009-09-09 杰群电子科技股份有限公司 打线结构及其制作方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111719064A (zh) * 2015-08-12 2020-09-29 日铁新材料股份有限公司 半导体装置用接合线
CN111719064B (zh) * 2015-08-12 2022-03-15 日铁新材料股份有限公司 半导体装置用接合线
CN107266857A (zh) * 2016-03-30 2017-10-20 旭化成株式会社 热固性树脂组合物
CN107266857B (zh) * 2016-03-30 2020-04-14 旭化成株式会社 热固性树脂组合物

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Application publication date: 20121010