CN102642827A - Method for preparing graphene pipe and graphene band - Google Patents
Method for preparing graphene pipe and graphene band Download PDFInfo
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- CN102642827A CN102642827A CN2012101117244A CN201210111724A CN102642827A CN 102642827 A CN102642827 A CN 102642827A CN 2012101117244 A CN2012101117244 A CN 2012101117244A CN 201210111724 A CN201210111724 A CN 201210111724A CN 102642827 A CN102642827 A CN 102642827A
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Abstract
The invention discloses a method for preparing a graphene pipe and a graphene band. The method for preparing a three-dimensional graphene pipe comprises the following steps of: (1) implementing chemical vapor deposition in an oxygen-free environment by adopting a netted solid pipe material as a substrate and adopting a carbon-contained compound as carbon source gas, and cooling a product after the reaction to obtain a three-dimensional graphene pipeline network material wrapped on the surface of the substrate; (2) etching a pipe core of the netted pipe core material after covering a layer of protective material on the surface of the product obtained in the step (1) to obtain the three-dimensional graphene pipe. If the product obtained in the step (1) is directly etched, the three-dimensional structure is automatically sunken into a two-dimensional graphene band network. The method has ingenious concept and is simple and easy to operate, and the product has multiple excellent macro physical characteristics. The method can be widely applied to the controllable mass production process of the three-dimensional graphene pipeline network and the two-dimensional graphene band network.
Description
Technical field
The invention belongs to material prepn and material modification field, relate to the method for preparing Graphene pipe and Graphene band.
Background technology
Graphene is the another great discovery of nano-carbon material field behind carbon nanotube, soccerballene.Graphite is three-dimensional laminate structure, at a distance of 0.34nm, combines with Van der Waals force between graphite crystal middle level and the layer, promptly belongs to molecular crystal between layer and the layer.Graphene can be divided into one or more layers by its contained graphite flake number of plies.Really can self-existent Graphene, in 2004 by people such as the A.Geim of Univ Manchester UK and K.Novoselov, utilize the method for the high oriented graphite of tape stripping to obtain.The method for preparing at present Graphene mainly contains graphite and peels off method, epitaxial growth method, oxidation reduction process and chemical Vapor deposition process.Chemical Vapor deposition process is the technology that is used for depositing multiple material the most widely of using in the semi-conductor industry; Be that two or more gaseous feed is imported in the reaction chamber; Chemical reaction takes place each other, forms a kind of novel material, and deposits on the substrate surface.
Since Graphene came to light, performance that it is good and wide application prospect had caused people's extensive concern.At present, the applied research of Graphene mainly concentrates on fields such as nano electron device, photo-sensor, photovoltaic energy.IBM Corporation is the basis with the Graphene, has developed photodetector; Samsung utilizes Graphene excellent light transmission and electroconductibility, has prepared the big area touch-screen; Tsing-Hua University nano material laboratory, compound through graphene film and silicon materials being carried out heterojunction, form a kind of brand new solar energy battery.But present applied research is mainly in the two-dimentional category, how to carry out the expansion of field of three dimension, further researches and develops the focus that the application of Graphene in macroscopical field is still research.
Summary of the invention
The purpose of this invention is to provide a kind of method for preparing Graphene pipe and Graphene band.
The method of the three-dimensional Graphene pipe of preparation provided by the invention comprises the steps:
1) in oxygen-free environment, be substrate with netted solid tubes material, with the carbon compound carbon-source gas, carry out chemical vapour deposition, after finishing, reaction, obtains being coated on the three-dimensional Graphene piping network material of said substrate surface with the products therefrom cooling;
2) the said substrate of the said step 1) products therefrom of etching behind said step 1) products therefrom surface coverage layer of protecting material obtains said three-dimensional Graphene pipe.
In the said step 1) of aforesaid method, said carbon-source gas is selected from least a in methane, ethene and the ethanol, is specially methane; The material that constitutes said netted solid tubes material is selected from least a in the copper and mickel, is specially copper; In the said cooling step, in actually operating, can utilize the internal-external temperature difference of reaction unit, product is carried out chilling with reaction system by pulling out rapidly in the reaction units such as silica tube.
Said step 2) in, said protecting materials is selected from least a in YSR 3286 and the polymethylmethacrylate, is specially YSR 3286.This protecting materials has the protection Graphene, strengthens mechanical property, function such as chemisorption is provided.Be to obtain the better protection effect, can be after covering layer of protecting material step, with it at 50 ℃～70 ℃ held 20h.
Said step 1) chemical vapour deposition step specifically can comprise: in reaction system, feed argon gas and hydrogen earlier, heat up simultaneously, when waiting to be warming up to depositing temperature; Adjust the air inlet speed of said argon gas; Close hydrogen, and feed said carbon-source gas, carry out chemical vapour deposition reaction.
Wherein, said elder generation feeds in reaction system in argon gas and the hydrogen step, and the air inlet speed of argon gas is 600mL/min～1000mL/min, and the air inlet speed of hydrogen is 50mL/min～200mL/min;
In the said heating step, temperature rise rate is 10 ℃/min～15 ℃/min;
Said depositing temperature is 950 ℃～1000 ℃;
In the air inlet speed step of said argon gas of said adjustment and hydrogen, the air inlet speed of adjusted argon gas is 200mL/min～400mL/min;
In the said carbon-source gas step of said feeding, the air inlet speed of carbon-source gas is 5mL/min～15mL/min, and inlet period is 10min～20min.
The method of the two-dimentional Graphene band of preparation provided by the invention comprises the steps:
1) in oxygen-free environment, feeding carbon-source gas, is that substrate carries out chemical vapour deposition with netted solid tubes material, with the products therefrom cooling, obtains being coated on the three-dimensional Graphene piping network material of said substrate surface after reaction finishes;
2) the said substrate in the said step 1) products therefrom of etching obtains said two-dimentional Graphene band.
In the said step 1) of aforesaid method, said carbon-source gas is selected from least a in methane, ethene and the ethanol, is specially methane; The material that constitutes said netted solid tubes material is selected from least a in the copper and mickel, is specially copper.In the said cooling step, in actually operating, can utilize the internal-external temperature difference of reaction unit, product is carried out chilling with reaction system by pulling out rapidly in the reaction units such as silica tube.
This method steps 2) in, owing to the step 1) products therefrom is not protected, so when it was carried out etching, netted die material can subside automatically and be two-dimentional Graphene band.
Said step 1) chemical vapour deposition step specifically can comprise: in reaction system, feed argon gas and hydrogen earlier, heat up simultaneously, when waiting to be warming up to depositing temperature; Adjust the air inlet speed of said argon gas; Close hydrogen, and feed said carbon-source gas, carry out chemical vapour deposition reaction.
Wherein, said elder generation feeds in reaction system in argon gas and the hydrogen step, and the air inlet speed of argon gas is 600mL/min～1000mL/min, and the air inlet speed of hydrogen is 50mL/min～200mL/min;
In the said heating step, temperature rise rate is 10 ℃/min～15 ℃/min;
Said depositing temperature is 950 ℃～1000 ℃;
In the air inlet speed step of said argon gas of said adjustment and hydrogen, the air inlet speed of adjusted argon gas is 200mL/min～400mL/min;
In the said carbon-source gas step of said feeding, the air inlet speed of carbon-source gas is 5mL/min～15mL/min, and inlet period is 10min～20min.
In above-mentioned two methods, die material can be the surface film attached to other body phase die material, also can be body phase solid material.
Processing obtained the macroshape of substrate before the present invention utilized; The sedimentary Graphene pipe macro morphology of control; After selective etch falls substrate, pipe or covers, can obtain another kind of Graphene pipe, band and with the combination of other material, be facilitating property of post-treatment.Have the following advantages: 1, the present invention's mode of adopting chemical Vapor deposition process and separation and purification method to combine prepares three-dimensional Graphene piping network and two-dimentional Graphene band network; Easy to operate; Simple and feasible can be prepared this material of this form of big area on macroscopic view.2, three-dimensional Graphene piping network is the space multistory structure, has possessed excellent properties such as HS, high conductivity, network pattern is controlled.3, the caliber of the Graphene pipe in the nacrostructure is more than the micron, processing or post-treatment ME before helping, and then obtain various composite structure and function.4, two-dimentional Graphene band network is compared common graphite alkene film, has possessed characteristics such as HS, electric property is unique, the network pattern is controlled, for the macroscopic view of grapheme material is used the new exploration approach that proposed.
Description of drawings
Fig. 1 is a chemical vapor deposition unit synoptic diagram of the present invention, and wherein, 1 is tube furnace, and 2 is silica tube, and 3 is inlet pipe, and 4 is escape pipe, and 5 is quartz boat.
Fig. 2 is the structural representation of the three-dimensional Graphene pipe of the embodiment of the invention 1 preparation.
Fig. 3 is the structural representation of the two-dimentional Graphene band for preparing of the present invention.
Fig. 4 is macroscopical product photo of the embodiment of the invention 3 preparation gained two dimension Graphene bands.
Fig. 5 is the scanning electron microscope diagram sheet of the embodiment of the invention 3 preparation gained two dimension Graphene bands of the present invention.
Embodiment
Below in conjunction with specific embodiment the present invention is done further elaboration, but the present invention is not limited to following examples.Said method is ordinary method if no special instructions.Said starting material all can get from open commercial sources if no special instructions.
1) according to ordinary method the anaerobic reaction unit (like Fig. 1) of chemical Vapor deposition process is set after, be 60 μ m with diameter, the order number is that 100 copper mesh is successively put into 1mol/L hydrochloric acid and deionized water; Ultrasonic cleaning is no less than 5 minutes respectively, is placed on the quartz boat 5 cleaning copper mesh later, and quartz boat 5 is sent in the silica tube 2; Feed argon gas and hydrogen through inlet pipe 3, the air inlet speed of argon gas is 800mL/min, and the air inlet speed of hydrogen is 50mL/min; Tube furnace 1 is heated to 1000 ℃; After temperature arrived 1000 ℃, the air inlet speed of argon gas was adjusted into 200mL/min, closes hydrogen.Simultaneously, through speed to silica tube 2 in the air inlet methane of inlet pipe 3 with 10 μ L/min, inlet period is 15min; After air inlet is accomplished; Pull out quartz boat 5, copper mesh is carried out chilling handle, can obtain being coated on the three-dimensional Graphene piping network material on copper mesh surface after the cooling.
2) PDMS and solidifying agent silicone elastomer (available from Dow Corning Corporation, PIN is 184) are configured mixing and stirring at 10: 1 according to the ratio in the product description; Three-dimensional Graphene pipeline material for Graphene is arranged in the copper mesh surface growth evenly applies one deck PDMS above that, at 50 ℃ of held 20h; Formation is coated on the flexible back bone on three-dimensional Graphene piping network surface; The three-dimensional Graphene piping network product that will have flexible PDMS skeleton places the iron content ion solution, and the copper mesh kernel is carried out etching, and wherein iron content ion solution concentration is 1mol/L; Obtain having the three-dimensional Graphene piping network of PDMS flexible back bone after the etching; Product is transferred in the container that fills in the deionized water, repeatedly cleans adherent iron ion on it, obtain three-dimensional Graphene pipe provided by the invention.
The structure of this product is as shown in Figure 2.Can know that by figure 7 is netted solid tubes material copper pipe, 8 is Graphene, and 9 is the PDMS resist.Can know by figure, because the support of PDMS flexible back bone can obtain three-dimensional Graphene pipe after the copper core is etched.Its mesectoderm is the PDMS skeleton, and nexine is the Graphene pipeline.
Embodiment 2, the two-dimentional Graphene band of preparation
1) according to the identical step of embodiment 1 step 1), only copper mesh order number is replaced with 150;
2) the three-dimensional Graphene piping network of step 1) gained product is placed the iron content ion solution; The copper mesh kernel is carried out etching; Wherein iron content ion solution concentration is 0.5mol/L; Product is transferred in the container that fills in the deionized water, repeatedly cleans adherent iron ion on it, obtain two-dimentional Graphene band provided by the invention.
The structure of this product is as shown in Figure 3.Can know that by figure owing to there is not the flexible back bone of PDMS to support, three-dimensional Graphene piping network will be collapsed and is two-dimentional Graphene band network.The photomacrograph of this product is as shown in Figure 4.The SEM of this product characterizes as shown in Figure 5.Can know that by figure product of the present invention is latticed Graphene, the yardstick of grid is determined by the copper mesh skeleton.
1) according to the identical step of embodiment 2 step 1), only methane is replaced with ethene;
2) according to embodiment 2 steps 2) identical step.Products therefrom and Fig. 4 and Fig. 5 do not have substantive difference, also are latticed Graphene.
Embodiment 4, the two-dimentional Graphene band of preparation
1) according to the identical step of embodiment 2 step 1), only methane air inlet speed is replaced with 15 μ L/min;
2) according to embodiment 2 steps 2) identical step.Products therefrom and Fig. 4 and Fig. 5 do not have substantive difference, also are latticed Graphene.Above-mentioned each embodiment only is used to explain the present invention, and wherein the structure of each parts, physical parameter etc. all can change to some extent, and every equivalents of on the basis of technical scheme of the present invention, carrying out and improvement all should not got rid of outside protection scope of the present invention.
Claims (8)
1. a method for preparing three-dimensional Graphene pipe comprises the steps:
1) in oxygen-free environment, be substrate with netted solid tubes, with the carbon compound carbon-source gas, carry out chemical vapour deposition, after finishing, reaction, obtains being coated on the three-dimensional Graphene piping network material of said substrate surface with the products therefrom cooling;
2) the said substrate of the said step 1) products therefrom of etching behind said step 1) products therefrom surface coverage layer of protecting material obtains said three-dimensional Graphene pipe.
2. method according to claim 1 is characterized in that: in the said step 1), said carbon-source gas is selected from least a in methane, ethene and the ethanol; The material that constitutes said netted solid tubes is selected from least a in the copper and mickel;
Said step 2) in, said protecting materials is selected from least a in YSR 3286 and the polymethylmethacrylate.
3. method according to claim 1 and 2; It is characterized in that: said step 1) chemical vapour deposition step comprises: in reaction system, feed argon gas and hydrogen earlier, heat up simultaneously, when waiting to be warming up to depositing temperature; Adjust the air inlet speed of said argon gas; Close hydrogen, and feed said carbon-source gas, carry out chemical vapour deposition reaction.
4. method according to claim 3 is characterized in that: said elder generation feeds in reaction system in argon gas and the hydrogen step, and the air inlet speed of argon gas is 600mL/min～1000mL/min, and the air inlet speed of hydrogen is 50mL/min～200mL/min;
In the said heating step, temperature rise rate is 10 ℃/min～15 ℃/min;
Said depositing temperature is 950 ℃～1000 ℃;
In the air inlet speed step of said argon gas of said adjustment and hydrogen, the air inlet speed of adjusted argon gas is 200mL/min～400mL/min;
In the said carbon-source gas step of said feeding, the air inlet speed of carbon-source gas is 5mL/min～15mL/min, and inlet period is 10min～20min.
5. a method for preparing two-dimentional Graphene band comprises the steps:
1) in oxygen-free environment, feeding carbon-source gas, is that substrate carries out chemical vapour deposition with netted solid tubes, with the products therefrom cooling, obtains being coated on the three-dimensional Graphene piping network material of said substrate surface after reaction finishes;
2) the said substrate in the said step 1) products therefrom of etching obtains said two-dimentional Graphene band.
6. method according to claim 5 is characterized in that: in the said step 1), said carbon-source gas is selected from least a in methane, ethene and the ethanol; The material that constitutes said netted solid tubes is selected from least a in the copper and mickel.
7. according to claim 5 or 6 described methods; It is characterized in that: said step 1) chemical vapour deposition step comprises: in reaction system, feed argon gas and hydrogen earlier, heat up simultaneously, when waiting to be warming up to depositing temperature; Adjust the air inlet speed of said argon gas; Close hydrogen, and feed said carbon-source gas, carry out chemical vapour deposition reaction.
8. method according to claim 7 is characterized in that: said elder generation feeds in reaction system in argon gas and the hydrogen step, and the air inlet speed of argon gas is 600mL/min～1000mL/min, and the air inlet speed of hydrogen is 50mL/min～200mL/min;
In the said heating step, temperature rise rate is 10 ℃/min～15 ℃/min;
Said depositing temperature is 950 ℃～1000 ℃;
In the air inlet speed step of said argon gas of said adjustment and hydrogen, the air inlet speed of adjusted argon gas is 200mL/min～400mL/min;
In the said carbon-source gas step of said feeding, the air inlet speed of carbon-source gas is 5mL/min～15mL/min, and inlet period is 10min～20min.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104743547A (en) * | 2015-03-06 | 2015-07-01 | 同济大学 | Preparation method of three-dimensional graphene macro body |
| CN104819804A (en) * | 2015-05-20 | 2015-08-05 | 清华大学 | Piezoresistive vacuum gauge and manufacturing method thereof |
| CN104817072A (en) * | 2015-03-27 | 2015-08-05 | 中国科学技术大学 | High mechanical strength multilayer graphene and preparation method thereof |
| CN104843685A (en) * | 2015-04-10 | 2015-08-19 | 四川大学 | Method for preparation of three-dimensional porous graphene carbon electrode material from livestock excrement |
| CN104973588A (en) * | 2014-04-11 | 2015-10-14 | 中国科学院上海硅酸盐研究所 | High-electric-conductive, high-thermal-conductive and flexible three-dimensional graphene material and preparation method thereof |
| CN105577126A (en) * | 2015-12-15 | 2016-05-11 | 清华大学 | Distributed amplifier circuit topological structure for inter-stage matching of graphene transmission line |
| CN105752962A (en) * | 2014-12-17 | 2016-07-13 | 中国科学院上海硅酸盐研究所 | Three-dimensional graphene macroscopic material and preparation method thereof |
| CN107140621A (en) * | 2017-05-09 | 2017-09-08 | 福建师范大学 | A kind of preparation method of ultra-thin layer graphene micro-pipe |
| CN109546108A (en) * | 2018-11-08 | 2019-03-29 | 中航锂电（洛阳）有限公司 | A kind of low bulk silicon based composite material and preparation method, silicon based anode material and lithium ion battery |
| CN110467177A (en) * | 2018-05-11 | 2019-11-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Composite graphite alkene framework and the preparation method and application thereof |
| CN112010288A (en) * | 2019-05-29 | 2020-12-01 | 中国科学院宁波材料技术与工程研究所 | Tubular graphene aerogel and preparation method and application thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110040055A (en) * | 2009-10-13 | 2011-04-20 | 한국표준과학연구원 | Preparation of graphene microtubes |
-
2012
- 2012-04-16 CN CN2012101117244A patent/CN102642827A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110040055A (en) * | 2009-10-13 | 2011-04-20 | 한국표준과학연구원 | Preparation of graphene microtubes |
Non-Patent Citations (1)
| Title |
|---|
| ZONGPING CHEN ET AL: "Three-dimensional flexible and conductive interconnected grapheme networks grown by chemical vapour deposition", 《NATURE MATERIALS》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104973588A (en) * | 2014-04-11 | 2015-10-14 | 中国科学院上海硅酸盐研究所 | High-electric-conductive, high-thermal-conductive and flexible three-dimensional graphene material and preparation method thereof |
| CN105752962A (en) * | 2014-12-17 | 2016-07-13 | 中国科学院上海硅酸盐研究所 | Three-dimensional graphene macroscopic material and preparation method thereof |
| CN104743547A (en) * | 2015-03-06 | 2015-07-01 | 同济大学 | Preparation method of three-dimensional graphene macro body |
| CN104817072A (en) * | 2015-03-27 | 2015-08-05 | 中国科学技术大学 | High mechanical strength multilayer graphene and preparation method thereof |
| CN104843685A (en) * | 2015-04-10 | 2015-08-19 | 四川大学 | Method for preparation of three-dimensional porous graphene carbon electrode material from livestock excrement |
| CN104843685B (en) * | 2015-04-10 | 2016-08-24 | 四川大学 | Utilize the method that excrement of animals prepares three-dimensional porous class graphene carbon electrode material |
| CN104819804A (en) * | 2015-05-20 | 2015-08-05 | 清华大学 | Piezoresistive vacuum gauge and manufacturing method thereof |
| CN105577126A (en) * | 2015-12-15 | 2016-05-11 | 清华大学 | Distributed amplifier circuit topological structure for inter-stage matching of graphene transmission line |
| CN107140621A (en) * | 2017-05-09 | 2017-09-08 | 福建师范大学 | A kind of preparation method of ultra-thin layer graphene micro-pipe |
| CN110467177A (en) * | 2018-05-11 | 2019-11-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Composite graphite alkene framework and the preparation method and application thereof |
| CN109546108A (en) * | 2018-11-08 | 2019-03-29 | 中航锂电（洛阳）有限公司 | A kind of low bulk silicon based composite material and preparation method, silicon based anode material and lithium ion battery |
| CN112010288A (en) * | 2019-05-29 | 2020-12-01 | 中国科学院宁波材料技术与工程研究所 | Tubular graphene aerogel and preparation method and application thereof |
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Application publication date: 20120822 |