CN102299230A - Film for improving transmissivity of LED chip and preparation method of film - Google Patents
Film for improving transmissivity of LED chip and preparation method of film Download PDFInfo
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- CN102299230A CN102299230A CN201110200782XA CN201110200782A CN102299230A CN 102299230 A CN102299230 A CN 102299230A CN 201110200782X A CN201110200782X A CN 201110200782XA CN 201110200782 A CN201110200782 A CN 201110200782A CN 102299230 A CN102299230 A CN 102299230A
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- led chip
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Abstract
The invention discloses a film for improving a transmissivity of an LED chip. The film comprises two components: ITO and SiO2. The film is characterized in that: an ultraviolet curing technology is employed to plate the film provided in the invention on the surface of the LED chip. Besides, the invention also discloses a method for preparing a film for improving a transmissivity of an LED chip. The method comprises the following steps: preparation of an ITO precursor; preparation of a SiO2 precursor; synthesis of a plated film solution; and processing of the plated film by the ultraviolet curing technology. The LED chip comprises all chips that emit an ultraviolet light, a purple light, a blue light, a green light, a yellow light, an amber light, a red light, and an infrared light. According to the invention, the prepared film has advantages of high transmissivity and low reflectivity; besides, costs are low and the films can be mass produced.
Description
Technical field
The present invention relates to a kind of rete that improves the led chip transmissivity and preparation method thereof.
Background technology
LED has advantages such as luminous efficiency height, energy-saving and environmental protection as a kind of new type light source, be described as replace incandescent lamp and fluorescent lamp the 4th generation light source.In order to reach the standard of general illumination, the luminous efficiency that increases LED is one of current research focus.The luminous efficiency of LED comprises internal quantum efficiency and external quantum efficiency, the luminous efficiency when internal quantum efficiency is meant electronics and hole-recombination in the active layer, the efficient from the chip surface outgoing that external quantum efficiency is then sent for luminescent layer.And as ripe red, green, blue look led technology, because the led chip refractive index is higher, the light that active layer sends has much by surface reflection and total reflection at chip surface, causes external quantum efficiency lower, thereby has influenced the whole lighting efficiency of LED.
Summary of the invention
The objective of the invention is: the deficiency that overcomes existing luminous efficiency research, a kind of rete that improves the led chip transmissivity and preparation method thereof is provided, the light that the rete of preparation can make active layer send is gone out in the transmission of chip surface process rete, reduce surface reflection, reduce total reflection, and then improve the luminous efficiency of LED.
In order to realize purpose of the present invention, adopt following technology:
A kind of rete that improves the led chip transmissivity comprises ITO and SiO
2Two kinds of constituents, it is characterized in that: the rete of described raising led chip transmissivity adopts the ultra-violet curing technology to be plated in the surface of led chip, and described led chip comprises all ultraviolet lights, purple light, blue light, green glow, gold-tinted, amber light, ruddiness, infrared light chip.
The present invention proposes a kind of preparation method who makes the rete of above-mentioned raising led chip transmissivity, comprise following steps:
Step 1: with functional vinyl silanes solution, add entry and catalyst after, functional vinyl silanes hydrolysis becomes functional vinyl silanes alcohol;
Step 2: ito powder (nanoscale) and functional vinyl silanes alcohol are mixed, again mixed solution is carried out high-intensity mechanical lapping, the solution of output can be checked with the electromotive force particle analyzer, obtains ITO chemistry antecedent;
Step 3: use nanoscale lenticular silicon dioxide to replace ito powder repeating step 1,2, obtain SiO
2The chemistry antecedent;
Step 4: with synthetic ITO and SiO
2Antecedent drops into solution, and adds emulsion, organic solvent, and mixed solution is coated solution;
Step 5: adopt the ultra-violet curing technology that coated solution is plated in the led chip surface.
Advantage of the present invention is: adopt the ultra-violet curing technology that high-transmission rate antireflection rete is plated in the led chip surface, transmitance can be greater than 98%, and reflectivity is lower than 1%, improved the luminous efficiency of LED, and radiation curing coated solution fast, with low cost, can be used for producing in batches.
Description of drawings
Fig. 1 shows rete preparation method's of the present invention flow chart.
Embodiment
As shown in Figure 1, a kind of rete that improves the led chip transmissivity comprises ITO and SiO
2Two kinds of constituents is characterized in that: the rete of described raising led chip transmissivity adopts the ultra-violet curing technology to be plated in the surface of led chip.The principle of ultra-violet curing technology is to add light trigger (or sensitising agent) in the resin of special formulation, after absorbing the high-intensity ultraviolet light in ultraviolet ray (UV) uv equipment, produce living radical, thereby initiated polymerization, cross-linking reaction, it is solid-state that resin was converted into by liquid state in the several seconds.
The preparation method of the rete of this raising led chip transmissivity comprises following steps:
Step 1: with functional vinyl silanes solution, add entry and catalyst after, functional vinyl silanes hydrolysis becomes functional vinyl silanes alcohol;
Step 2: ito powder (nanoscale) and functional vinyl silanes alcohol are mixed, again mixed solution is carried out high-intensity mechanical lapping, the solution of output can be checked with the electromotive force particle analyzer, obtains ITO chemistry antecedent;
Step 3: use nanoscale lenticular silicon dioxide to replace ito powder repeating step 1,2, obtain SiO
2The chemistry antecedent;
Step 4: with synthetic ITO and SiO
2Antecedent drops into solution, and adds emulsion, organic solvent, and mixed solution is coated solution;
Step 5: adopt the ultra-violet curing technology that coated solution is plated in the led chip surface.
Claims (3)
1. a rete that improves the led chip transmissivity comprises ITO and SiO
2Two kinds of constituents is characterized in that: the rete of described raising led chip transmissivity adopts the ultra-violet curing technology to be plated in the surface of led chip.
2. the method that is used for the high-transmission rate antireflection rete of led chip according to claim 1 is characterized in that comprising following steps:
Step 1: with functional vinyl silanes solution, add entry and catalyst after, functional vinyl silanes hydrolysis becomes functional vinyl silanes alcohol;
Step 2: ito powder (nanoscale) and functional vinyl silanes alcohol are mixed, again mixed solution is carried out high-intensity mechanical lapping, the solution of output can be checked with the electromotive force particle analyzer, obtains ITO chemistry antecedent;
Step 3: use nanoscale lenticular silicon dioxide to replace ito powder repeating step 1,2, obtain SiO
2The chemistry antecedent;
Step 4: with synthetic ITO and SiO
2Antecedent drops into solution, and adds emulsion, organic solvent, and mixed solution is coated solution;
Step 5: adopt the ultra-violet curing technology that coated solution is plated in the led chip surface.
3. led chip according to claim 1 comprises all ultraviolet lights, purple light, blue light, green glow, gold-tinted, amber light, ruddiness, infrared light chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110200782XA CN102299230A (en) | 2011-07-18 | 2011-07-18 | Film for improving transmissivity of LED chip and preparation method of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110200782XA CN102299230A (en) | 2011-07-18 | 2011-07-18 | Film for improving transmissivity of LED chip and preparation method of film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102299230A true CN102299230A (en) | 2011-12-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110200782XA Pending CN102299230A (en) | 2011-07-18 | 2011-07-18 | Film for improving transmissivity of LED chip and preparation method of film |
Country Status (1)
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|---|---|
| CN (1) | CN102299230A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049741B2 (en) * | 2004-01-27 | 2006-05-23 | Eastman Kodak Company | Organic light emitting diode with improved light emission through substrate |
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2011
- 2011-07-18 CN CN201110200782XA patent/CN102299230A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049741B2 (en) * | 2004-01-27 | 2006-05-23 | Eastman Kodak Company | Organic light emitting diode with improved light emission through substrate |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111228 |