CN101858928A - Capacitance-type triaxial accelerator for micromotor system - Google Patents
Capacitance-type triaxial accelerator for micromotor system Download PDFInfo
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- CN101858928A CN101858928A CN200910133535A CN200910133535A CN101858928A CN 101858928 A CN101858928 A CN 101858928A CN 200910133535 A CN200910133535 A CN 200910133535A CN 200910133535 A CN200910133535 A CN 200910133535A CN 101858928 A CN101858928 A CN 101858928A
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Abstract
The invention relates to a method for manufacturing a capacitance-type triaxial accelerator for a micro-electromechanical system (MEMS). The method comprises the following steps: taking a wafer, wherein the wafer is provided with an upper layer, a lower layer and an intermediate layer which is sandwiched between the upper layer and the lower layer, the upper layer and the lower layer are made of semiconductor materials, and the intermediate layer is made of electric insulation materials; arranging at least one electrically conducting component which electrically connecting the upper layer and the lower layer of the wafer; etching a mass block, which is independent of other parts on the lower layer of the wafer, wherein the mass block is provided with a core and four symmetrical side parts; forming a plurality of conductive connection points on the surface of the upper layer of the wafer; etching a suspension component, which is connected with the mass block, on the upper layer of the wafer; and removing the part of the junction formed by the intermediate layer of the wafer sandwiched between the bottom surface of the upper layer of the wafer and the top surface of every lateral part of the mass block, which are connected with the top surfaces of the side parts so as to form a gap.
Description
Technical field
The present invention is relevant with the acceleration device, particularly about a kind of capacitance-type triaxial acceleration device for microelectromechanical-systems (MEMS) use.
Background technology
Press, the U.S. the 7th, 361, No. 523 patent disclosures the method for making of a kind of manufacturing capacitance-type triaxial acceleration device (Three-Axis Accelerometer), as this patent Figure 15 and shown in Figure 16, it is outside the position of first and second axis accelerometer, and a 3-axis acceleration device independently is set in addition again.Though this kind accelerometer can but can make overall volume become big at three mutually orthogonal online detecting acceleration of axle; Moreover the comb capacitance group that this kind accelerometer is used for changing each axial translation amount is mechanically to combine, and therefore the measured capacitance of first axis accelerometer can importantly be passed to second axis accelerometer, and the error of measuring.In addition, the problem of this kind accelerometer maximum is that the quality of the mass of its induction acceleration can be limited in certain scope owing to take the comb capacitance group to come the transition shift amount, and therefore measuring sensitivity can't promote.
Summary of the invention
The object of the present invention is to provide a kind of method for making of the capacitance-type triaxial acceleration device that uses for microelectromechanical-systems (MEMS), to overcome the defective that exists in the known technology.
For achieving the above object, the method for making according to capacitance-type triaxial acceleration device provided by the present invention comprises following step:
One wafer (wafer) is provided, and this wafer has a upper strata, and a lower floor and is folded in the middle layer of the two, and this levels is to make with semiconductor material, and the middle layer is to make with the electrical isolation material;
Lay at least one upper and lower layer of this wafer that makes and electrically connect electrically conducting spare;
Be independent of the mass at this other position of wafer lower floor in this wafer lower floor etching one, this mass has wholeheartedly portion, four sidepieces that extend outward symmetrically from this heart portion;
Form some conductive junction points in this wafer upper surface;
The Suspension of isolating corresponding to other position of regional etching one and this upper strata of this mass in this wafer upper strata, this Suspension has an axial region that is connected with this mass heart portion, extend outward and 90 four arms of respectively being separated by from this axial region respectively, respectively the end of this arm is positioned at the periphery on this wafer upper strata and correspondence one of this conductive junction point at least respectively respectively; And
This wafer middle layer is folded in this wafer upper layer undersurface and each sidepiece end face junction of this mass is partly removed, in order to form a space.
Another feature of method for making of the present invention is except abovementioned steps, also includes after the step that forms this mass, and laminar surface amplexiforms the step of a bottom under this wafer, and wherein this bottom is to make with the material of high resistance or electrical isolation.
The another feature of method for making of the present invention is except abovementioned steps, after also including the step that forms this mass, amplexiform a loam cake made from semiconductor material in this wafer upper surface, one surface of this loam cake has the electric insulation pad of some tool predetermined altitudes, and some through holes, when amplexiformed on this loam cake and this wafer upper strata, respectively this through hole was to conductive junction point that should the wafer upper strata, with so that respectively this conductive junction point can be connected with the external world.
Effect of the present invention is:
1) with the made acceleration device of the present invention, having than known technology is good measurement sensitivity.
2) according to the made accelerometer of the present invention, it is positioned at the online accelerometer institute sensed data of each orthogonal axes can be at another online generation component, and in other words, the sensing error amount can be less than known technology.
Description of drawings
Fig. 1 shows the cross section of a wafer;
Fig. 2 is presented at the central part etching on aforementioned wafer upper strata and at least always wears the cylinder hole in this upper strata and middle layer;
The upper surface that Fig. 3 is presented at aforementioned wafer deposits a metal level;
Fig. 4 shows the only surplus wafer cross-section that is filled in the part in the cylinder hole of aforementioned metal layer removal;
Fig. 5 shows the position etching one recessed space of the corresponding aforementioned cylinder hole of laminar surface under the aforementioned wafer;
Fig. 6 is presented at recessed space etching one mass of aforementioned wafer lower floor;
Fig. 7 is presented at that laminar surface connects a bottom under the aforementioned wafer;
Fig. 8 is presented at aforementioned wafer upper surface deposition number of metal conductive junction point;
Fig. 9 is presented at the Suspension that aforementioned wafer upper strata etching one connects this mass;
Figure 10 shows the middle layer removal of aforementioned wafer between mass;
Figure 11 shows the cross section of a loam cake;
Figure 12 shows aforesaid loam cake cover cap in the wafer upper surface;
Figure 13 shows exposes the metallic conduction contact on wafer upper strata aforementioned loam cake wear down;
Figure 14 is the part exploded perspective view according to the made acceleration device of method for making one embodiment of the present invention;
Figure 15 is the part sectional block diagram of aforementioned acceleration device after loam cake and bottom are removed;
Figure 16 is the schematic cross-section of aforementioned acceleration device mass beat on X-axis or Y direction; And
Figure 17 is the schematic cross-section of aforementioned acceleration device mass beat on Z-direction.
Primary clustering symbol description in the accompanying drawing
Square wafer 10 upper stratas 12
Sidepiece 40 cut surfaces 42
Wafer 70 surfaces 72
Insulating mat 74 recessed 76
Loam cake 80 through holes 82
Embodiment
Below lift a preferred embodiment and conjunction with figs. method for making provided by the present invention is described further, wherein:
See also each accompanying drawing, Fig. 1 shows a square wafer 10 of being made up of trilaminate material, it 12 is made with the semiconductor material of for example silicon with lower floor 14 at the middle and upper levels, middle layer 16 is the electrical isolation materials with for example oxide (oxide), in present embodiment, the thickness on upper strata 12 is about 10 μ m, and the thickness of lower floor 14 is about 388 μ m, and the thickness in middle layer 16 is about 2 μ m.
Fig. 2 shows and to utilize little shadow and dry etching method 12 middle positions form four cylinder holes 18 independently separately on the upper strata that each cylinder hole 18 only runs through upper strata 12 and middle layer 16.
Fig. 3 is presented at and forms after each cylinder hole 18, at wafer 10 upper stratas 12 surface depositions, one conductive layer 20, when carrying out depositing operation, each cylinder hole 18 is filled up by conductive material.
Fig. 4 shows conductive layer 20 removals, only keeps the part of filling in each cylinder hole 18, is convenient the description, claims this partly to be conductive pole 19.
Fig. 5 is shown in the position etching one recessed space 22 of lower floor's corresponding aforementioned each conductive pole 19 in 14 surfaces of wafer 10.
Fig. 6 is shown in the zone that the recessed space 22 of wafer 10 lower floors 14 is defined, and etches a mass 30 that is independent of lower floor 14 other positions.Please cooperate and consult Figure 15, mass 30 has wholeheartedly portion 32, four sidepieces 40 that extend outward symmetrically from heart portion 32, separate by a cut surface 42 respectively between two adjacent sidepieces, in present embodiment, each sidepiece is to be the segment that interior angle is 90 degree, and the zone of each conductive pole 19 is contained on 32 corresponding upper stratas 12 in heart portion.
The lower floor 14 that Fig. 7 is shown in wafer 10 amplexiforms one with electric insulation or the high-resistance material of the tool made bottom 44 of glass for example.
Fig. 8 then is shown in the upper strata 12 surface perimeter deposition number of metal conductive junction point 46 of wafer 10, and present embodiment is that each side has three conductive junction points 46 respectively.
The upper strata 12 that Fig. 9 is shown in wafer 10 is corresponding to the regional etching one of mass 30 Suspension 50 independently, please cooperate and consult Figure 14 and Figure 15, Suspension 50 has one and comprises each conductive pole 19 and be positioned at the axial region 52 of mass 30 heart portions 32 tops, extend outward and 90 four arms 54 of spending of respectively being separated by from axial region 52 respectively, each arm 52 corresponds respectively to each divisional plane 42 between mass 30 each sidepiece, and the end of each arm 52 is a corresponding conductive junction point 46 respectively.The axial region 52 of Suspension 50 links together with the heart portion 32 of mass 30, and forms electric connection by each conductive pole 19.Must should be mentioned that at this Suspension 50 is to be connected with mass 30 by axial region 52, when mass 30 is subjected to external force and during displacement, the function of each arm 52 is just as the bullet Huang.
Figure 10 shows middle layer 16 is folded in the part removal between wafer 12 bottom surfaces, 10 upper stratas and mass 30 each sidepiece 40 end face and forms a space 60, with so that mass 30 can in a preset range, bob and weave.
The wafer 70 that a thickness is about 400 μ m is taken in Figure 11 demonstration, in surface thereof 72 some insulating mats 74 is set, and some degree of depth are about recessed 76 of 125 μ m.
Figure 12 demonstration is amplexiformed wafer 70 thereon corresponding to the mode on 12 surfaces, wafer 10 upper stratas with surperficial 72, makes each recessed 76 each conductive junction point 46 of aligning when amplexiforming.
Figure 13 shows the upside of wafer 70 partly worn, makes its only surplus 100 μ m, in order to describe and wafer 70 difference, will be called loam cake 80 by the wafer 70 behind the worn part thickness herein.Recessed 76 then form through hole 82, so each conductive junction point 46 can contact with extraneous via each through hole 82.
According to the made acceleration device of present embodiment, 12,14 on each sidepiece 40 of its mass 30 and adjacent chip 10 upper and lower layers will form four groups of C
1, C
2, C
3, C
4, wherein the capacitance group of corresponding X-axis is C
X+=C
1+ C
2, C
X-=C
3+ C
4, the capacitance group of corresponding Y-axis is C
Y+=C
1+ C
4, C
Y-=C
2+ C
3, and the capacitance group of corresponding Z axle is C
z=C
1+ C
2+ C
3+ C
4
As shown in figure 16, with the made accelerometer of method for making of the present invention, mass 30 will be because of producing corresponding these axial displacements in the external force that acts on X-axis or Y-axis by Suspension 50, and these displacements will be by C
X+, C
X-Or C
Y+, C
Y-Electric capacity change amount and predicted.As shown in figure 17, when external force acted on Z axle with X-axis and Y-axis quadrature, mass 30 will produce displacement that should be axial, i.e. swing up or down, and shown in the figure upward arrow, these displacements will be by C
zElectric capacity change amount and being predicted.
By as can be known aforementioned, according to the made capacitance-type triaxial acceleration device of method for making of the present invention, its each capacitance group is to make with a wafer, in other words, each capacitance group is not to make with array mode, and the electric capacity change amount of each can not produce component on other axle, therefore measuring error can be reduced to minimum.Moreover the mass of this acceleration device can be big qualitatively than the mass of combed capacitance type acceleration device, therefore has higher measurement sensitivity certainly.
Claims (15)
1. the method for making of a capacitance-type triaxial accelerator that uses for microelectromechanical-systems comprises following step:
One wafer is provided, and this wafer has a upper strata, and a lower floor and is folded in the middle layer of the two, and this levels is to make with semiconductor material, and the middle layer is to make with the electrical isolation material;
Lay at least one upper and lower layer of this wafer that makes and electrically connect electrically conducting spare;
Be independent of the mass at this other position of wafer lower floor in this wafer lower floor etching one, this mass has wholeheartedly portion, four sidepieces that extend outward symmetrically from this heart portion;
Form some conductive junction points in this wafer upper surface;
The Suspension of isolating corresponding to other position of regional etching one and this upper strata of this mass in this wafer upper strata, this Suspension has an axial region that is connected with this mass heart portion, extend outward and 90 four arms of spending of respectively being separated by from this axial region respectively, respectively the end of this arm is positioned at the periphery on this wafer upper strata and distinguishes at least respectively one of this conductive junction point of correspondence; And
The part that this wafer middle layer is folded in this wafer upper layer undersurface and each sidepiece end face junction of this mass is removed, in order to form a space.
2. method for making as claimed in claim 1, wherein, be contained in cloth if after the step of the electrically conducting spare that the upper and lower layer of this wafer electrically connects, the position etching one of corresponding this electrically conducting spare of laminar surface is recessed into the space under this wafer, this mass is arranged at being recessed into the zone that the space is defined.
3. method for making as claimed in claim 2, wherein, be contained in the step that forms this mass after, laminar surface amplexiforms the step of a bottom under this wafer, this bottom is to make with the material of high resistance or electrical isolation.
4. method for making as claimed in claim 1, wherein, after being contained in the step that forms this mass, amplexiform the step of a loam cake made from semiconductor material in this wafer upper surface, one surface of this loam cake has the electric insulation pad of some tool predetermined altitudes, and some through holes, when amplexiform on this loam cake and this wafer upper strata, this wafer upper strata is by respectively this electric insulation pad and this loam cake are isolated, respectively this through hole is then respectively to a conductive junction point that should the wafer upper strata, with so that respectively this conductive junction point can be connected with the external world.
5. method for making as claimed in claim 1 wherein, is to be separated by a cut surface between each adjacent side of this mass.
6. method for making as claimed in claim 5, wherein, respectively this arm of this Suspension corresponds respectively to the divisional plane between each sidepiece of this mass.
7. method for making as claimed in claim 6, wherein, when forming this Suspension, make wherein two relative arms be positioned at one first online, in addition two relative arms be positioned at one second online, this first and second intersect vertical axis.
8. method for making as claimed in claim 1, wherein, the shape of this each sidepiece of mass is identical.
9. method for making as claimed in claim 1, wherein, the thickness of this wafer lower floor is greater than the thickness on this wafer upper strata.
10. method for making as claimed in claim 9, wherein, the thickness on this wafer upper strata is greater than the thickness in this wafer middle layer.
11. method for making as claimed in claim 7, wherein, each arm of this Suspension is the vertical bar shape.
12. method for making as claimed in claim 11, wherein, each arm of this Suspension has identical length.
13. method for making as claimed in claim 11, wherein, each arm of this Suspension has identical width.
14. method for making as claimed in claim 1, wherein, laying one makes the step of the electrically conducting spare of the upper and lower layer electric connection of this wafer, comprises:
In at least one cylinder hole of surperficial middle position etching on this wafer upper strata, this cylinder hole runs through this upper strata and middle layer;
Deposit a conductive layer in this wafer upper surface, this conductive layer fills up the made cylinder hole of abovementioned steps; And
This conductive layer is removed, only kept the part of filling in each cylinder hole.
15. the capacitance-type triaxial accelerator for the microelectromechanical-systems use is made with the described method for making of aforementioned each claim.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910133535A CN101858928B (en) | 2009-04-10 | 2009-04-10 | Capacitance-type triaxial accelerator for micromotor system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910133535A CN101858928B (en) | 2009-04-10 | 2009-04-10 | Capacitance-type triaxial accelerator for micromotor system |
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| CN101858928A true CN101858928A (en) | 2010-10-13 |
| CN101858928B CN101858928B (en) | 2012-09-05 |
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|---|---|---|---|
| CN200910133535A Expired - Fee Related CN101858928B (en) | 2009-04-10 | 2009-04-10 | Capacitance-type triaxial accelerator for micromotor system |
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| CN102435780A (en) * | 2011-11-22 | 2012-05-02 | 中国人民解放军国防科学技术大学 | Single-chip three-axis micro-mechanical accelerometer |
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| CN101069099A (en) * | 2003-02-24 | 2007-11-07 | 佛罗里达大学 | Integrated monolithic tri-axial micromachined accelerometer |
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