CN101738846A - Mask plate and manufacture method thereof - Google Patents
Mask plate and manufacture method thereof Download PDFInfo
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- CN101738846A CN101738846A CN200810226814A CN200810226814A CN101738846A CN 101738846 A CN101738846 A CN 101738846A CN 200810226814 A CN200810226814 A CN 200810226814A CN 200810226814 A CN200810226814 A CN 200810226814A CN 101738846 A CN101738846 A CN 101738846A
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Abstract
The invention relates to a mask plate and a manufacture method thereof. The mask plate comprises a lightproof region, a fully transparent region and a partial transparent region; the partial transparent region is formed in a such way that a semi-transparent part and a transparent part are alternatively arranged. The invention is a new mask plate manufactured by combining a grey mask plate technique and halftone mask plate technique; the mask plate ensures that the exposure of photoresist at the lower part of the partial nonopaque region is uniform when in use, which is beneficial to forming the smooth surface of a partial maintaining region of the photoresist, thereby facilitating the TFT groove etch and improving the yield of array substrates, at the same time, the obliquity of the photoresist at the edge of the partial maintaining region of the photoresist is increased, thereby the technique can be accurately controlled in the process of forming the TFT groove.
Description
Technical Field
The invention relates to a display technology, in particular to a mask plate and a preparation method thereof.
Background
In order to effectively reduce the cost of a Thin Film Transistor liquid crystal Display (hereinafter referred to as a TFT-LCD) and improve the yield, the manufacturing process of the TFT-LCD array substrate structure is gradually simplified. At present, the 4-time picture composition (4Mask) process is gradually popularized and applied.
The 4-time patterning (4Mask) process is realized by combining a second patterning (for forming a semiconductor layer pattern) and a third patterning (for forming a source electrode, a drain electrode and a data line pattern) in the 5-time patterning (5Mask) process in the one-time patterning process through multi-step etching. The 4-time patterning (4Mask) process comprises the following steps:
and 11, forming a gate electrode and a grid line on the substrate through a first time of patterning process.
And step 12, continuously depositing a gate insulating layer film, a semiconductor layer film, a doped semiconductor layer film and a source drain metal layer film on the substrate in the step 11.
Step 13, a second patterning process (taking a positive photoresist as an example) is performed: and (3) coating photoresist on the substrate formed in the step (12), and forming a fully exposed area, a partially exposed area and an unexposed area on the photoresist on the substrate through exposure treatment by adopting a Gray-tone (Gray-tone) mask plate or a Half-tone (Half-tone) mask plate. And continuously etching the source-drain metal film, the doped semiconductor film and the semiconductor film below the complete exposure area to form a source electrode, a drain electrode, a doped semiconductor layer and a semiconductor layer respectively. And then ashing the photoresist partial exposure area, continuously etching the source drain metal film and the doped semiconductor film below the original partial exposure area, etching a small part of the semiconductor film to form a TFT channel, and stripping the photoresist above the unexposed area.
And 14, forming a passivation layer and a passivation layer through hole on the substrate formed in the step 13 through a third patterning process.
And step 15, forming a pixel electrode on the substrate formed in the step 14 through a fourth patterning process.
Compared with the 5-time composition (5Mask) process, the core technology in the second composition process of the 4-time composition (4Mask) process is as follows: adopting a gray-tone mask technology based on a gray-tone mask plate or a half-tone mask technology based on a half-tone mask plate; both mask techniques can form partially exposed regions of the photoresist, but there is a difference in the technical mechanisms of the two.
The technical mechanism of the gray tone mask is as follows: the TFT channel pattern part formed on a Mask plate (Mask) is provided with a slit structure, and the light intensity of transmitted light is weakened by utilizing the principle that the light transmitted through the slit generates interference, so that the photoresist part of the substrate used for forming the TFT channel pattern area is exposed.
The technical mechanism of the halftone mask is as follows: and plating a metal oxide thin layer on the TFT channel pattern part formed on the mask plate to form a semi-transparent area, wherein the semi-transparent area has a semi-transparent function on light so that the light can be partially transmitted from the TFT channel pattern area, and the photoresist part on the substrate for forming the TFT channel pattern area is exposed.
The inventor finds that the following defects exist in the gray tone mask technology and the halftone mask technology at present in the process of implementing the invention:
although the gray mask technology can obtain a relatively ideal photoresist edge inclination angle a1, the gray mask technology adopts the principle of light interference based on slits, so that a partially exposed area with wave-shaped distribution (i.e. Ripple phenomenon) is easily formed on the surface of the photoresist. FIG. 1 is a schematic diagram of a prior art gray tone mask technique. The gray-tone mask shown in fig. 1 is composed of a transparent substrate 31 and an opaque film 33. As shown in fig. 1, light passing through two slits F1 formed in the opaque region B1 of the mask at intervals interferes to form a certain light intensity distribution, so that the exposure degree of the photoresist below the mask is not uniform, which is specifically represented as: the two slits F1 of the mask plate vertically correspond to the position of the thin film material 20, and the exposure degree of the photoresist 10 is larger, while the exposure degree of the photoresist at the position of the thin film material 20 corresponding to the opaque region B1 between the two slits F1 is smaller, so that the surface of the photoresist 10 exposed on the partial exposure region on the thin film material 20 is uneven. After the development treatment, part of the photoresist on the partial exposure area which is not subjected to the exposure treatment is remained, the photoresist thickness of the partial photoresist-remained area is uneven, and some areas are thick and some areas are thin. The difficulty in controlling the etching precision of the TFT channel is increased by the uneven thickness of the photoresist in the partially reserved photoresist region, for example:
in patterning the TFT channel, the corresponding photoresist on the thin film material may be removed by an ashing process. If the thin film material corresponding to the area where the photoresist is partially remained thin is considered to be capable of being etched, a smaller thickness is removed as a whole, so that the thin film material corresponding to the area where the photoresist is partially remained thin is exposed. However, such a process is likely to cause the photoresist to remain on the film material corresponding to the region where the photoresist is partially remained, the film material under the region where the photoresist is remained is not exposed and cannot be etched, and the source/drain metal film or the doped semiconductor layer under the region where the photoresist is remained is not etched, so that a source/drain short circuit (i.e., GT Bridge) is likely to be formed. In general, source-drain short circuits are one of the most prominent defects of the gray-tone mask technology.
In the process of patterning the TFT Channel, if the thin film material corresponding to the region with the partially remained photoresist thick can be completely etched, the semiconductor layer exposed below the TFT Channel with the partially remained photoresist thin portion of the photoresist region is easily over-etched, so that Channel over-etching (i.e. Channel Open) is formed.
In the current process for forming a TFT channel pattern based on a gray tone mask technology, the defects of source and drain short circuit and channel overetching are two defects which are difficult to avoid simultaneously.
The halftone mask technology controls the transmittance of light by adjusting the thickness of a translucent film such as a thin metal oxide film. FIG. 2 is a schematic diagram of a prior art half-tone mask technique. The gray-tone mask shown in fig. 2 is composed of a transparent substrate 31, a translucent film 32 and an opaque film 33, and is formed with opaque regions B1 and partially transparent regions C1. As shown in fig. 2, due to the characteristics of the light intensity distribution of the diffraction grating, the light passing through the partially light-transmitting region C1 forms a certain intensity distribution, which is expressed as: the light intensity of the area corresponding to the middle position of the semi-transparent film 32 is larger, and the light intensity of the area corresponding to the two ends of the semi-transparent film 32 is weaker, so that the surface of the photoresist 10, which is subjected to development processing and partially remains in the photoresist area, is in an ellipsoid shape. The inclination angle a2 of the photoresist 10 left at the edge of the TFT channel region formed on the thin film material 20 is small, which affects the Final Inspection critical dimension (FI-CD) of the TFT channel width, thereby causing the defect of the array substrate.
It can be seen from the above analysis that, in the TFT channel patterning process of the array substrate using the existing gray tone mask technology and halftone mask technology, the photoresist on the photoresist partial retention region is exposed unevenly, so that the photoresist surface on the photoresist partial retention region is uneven or the photoresist tilt angle retained at the edge of the TFT channel is small, which is not conducive to precise control of the process in the TFT channel formation process, and ultimately affects the electrical characteristics of the TFT channel.
Disclosure of Invention
The invention aims to provide a mask plate, so that after exposure treatment is carried out on the mask plate, the surface of photoresist on a photoresist part retention area is smooth, and the inclination angle of the photoresist on the edge of the photoresist part retention area is increased.
In order to achieve the above object, the present invention provides a mask plate comprising opaque regions, fully transmissive regions and partially transmissive regions, the partially transmissive regions being formed by alternately arranging translucent portions and transparent portions.
On the basis of the technical scheme, the sum of the areas of the semitransparent parts accounts for 50% -75% of the total area of the partial light-transmitting area. The light-tight region comprises a first light-tight region corresponding to the source electrode pattern and a second light-tight region corresponding to the drain electrode pattern, and the part of light-transmitting region corresponding to the TFT channel pattern is arranged between the first light-tight region and the second light-tight region; or the complete light transmission area comprises a first light transmission area corresponding to the source electrode pattern and a second light transmission area corresponding to the drain electrode pattern, and the partial light transmission area corresponding to the TFT channel pattern is arranged between the first light transmission area and the second light transmission area.
On the basis of the technical scheme, the thickness of the semitransparent part is
On the basis of the technical scheme, the semitransparent part is a U-shaped semitransparent part, and the transparent part is a U-shaped transparent part; the partial light-transmitting region comprises n semi-transparent parts and n +1 transparent parts, and the n semi-transparent parts and the n +1 transparent parts are symmetrically and alternately arranged along a symmetrical line of the second opaque region or the second light-transmitting region; n is an integer greater than or equal to 1. The width of the semitransparent part is 900 nm-1500 nm, and the width of the transparent part is 200 nm-1200 nm; or the width of the semitransparent part is 1000 nm-1200 nm, and the width of the transparent part is 250 nm-900 nm. The semitransparent part can be also provided with micropores. On the basis of the technical scheme, the first opaque area is a U-shaped opaque area, the second opaque area is a T-shaped opaque area, the semitransparent parts are linear semitransparent parts, and transparent parts are arranged between the adjacent linear semitransparent parts; a plurality of in-line semitransparent parts are symmetrically arranged on a part of light transmission area between two arms of the U-shaped light-tight area and the T-shaped light-tight area according to the symmetry line of the T-shaped light-tight area; and a plurality of linear semitransparent parts are arranged in a partial light transmission area between the bottom of the U-shaped light-proof area and the end part of the T-shaped light-proof area and parallel to the arm part of the U-shaped light-proof area. Or, the transparent part is a micropore, the semitransparent part is provided with a plurality of micropores, and the part of the semitransparent part which is not provided with the micropores and the micropores are arranged alternately.
On the basis of the technical scheme, the cross section of the micropore is in a circular shape, a square shape, a polygonal shape or a star shape, or the combination of the shapes. Furthermore, along the contour line of the semitransparent part to the radiation direction in the semitransparent part, the number distribution of micropores formed on the semitransparent part changes from dense to sparse, or the pore diameter of micropores formed on the semitransparent part changes from large to small.
On the basis of the technical scheme, the opaque region is made of Cr, Mn or Mo or an alloy material of the metals. The material of the translucent portion is an oxide or nitride of an alloy material of CrOx, CrNx, MnOx, MnNx, MoOx, MoNx, Cr, an oxide or nitride of an alloy material of Mn, or an oxide or nitride of an alloy material of Mo.
In order to achieve the above object, the present invention further provides a method for preparing a mask plate, comprising:
According to the technical scheme, the mask plate is a novel mask plate prepared by combining a gray-tone mask technology and a half-tone mask technology. Compared with a common gray-tone mask plate, the mask strip (Bar) in a part of light transmission area of the mask plate is a semitransparent part, so that semi-transmission light intensity is added in an area with light intensity formed by double-slit interference, a photoresist part above a TFT channel area is exposed and has uniform exposure degree on an array substrate, a smooth surface is formed, TFT channel etching is facilitated, the probability of generating defects such as source and drain short circuit or channel overetching is reduced, and the yield of the array substrate is improved. In addition, compared with a common half-tone mask plate, the light intensity below a partial light-transmitting area of the mask plate comprises interference light intensity and partial transmission light intensity, so that the light intensity distribution of a light source is dispersed, the problem that the inclination angle of the edge of a photoresist partial reserved area formed by light gathering is too small is solved, the inclination angle of the photoresist on the edge of the photoresist partial reserved area is increased, the accurate control of the process in the process of forming a TFT channel is facilitated, the stability of final detection of the key size in the etching process of the array substrate in the photoresist partial reserved area is facilitated, and the electrical performance of the TFT is improved. In addition, the mask plate is adopted to partially expose the photoresist, and the light intensity of the light irradiating the partially transmitting area of the mask plate is higher than that of the light transmitting by the common half-tone mask technology and the gray-tone mask technology, so that the mask plate is favorable for shortening the exposure time of the photoresist on the premise of realizing the same exposure degree of the photoresist, and is favorable for improving the productivity.
Drawings
FIG. 1 is a schematic diagram of a prior art gray tone mask technique;
FIG. 2 is a schematic diagram of a prior art halftone mask technique;
FIG. 3 is a schematic view of a mask plate according to the present invention;
FIG. 4 is a schematic structural diagram of a mask plate according to a first embodiment of the present invention;
FIG. 5 is a schematic structural view of a mask blank according to another embodiment of the present invention;
FIG. 6 is a structural diagram of a mask plate according to a second embodiment of the present invention;
FIG. 7 is a structural diagram of a mask plate according to a third embodiment of the present invention;
FIG. 8 is a structural diagram of a mask plate according to a fourth embodiment of the present invention;
FIG. 9 is a flowchart of an embodiment of a method for manufacturing a mask blank according to the present invention.
Description of reference numerals:
10-photoresist; 20-a thin film material; 31-a transparent substrate;
32-translucent film; 33-opaque film; 41-U-shaped opaque regions;
42-T type opaque region; a 43-U shaped transparent portion; 44-a U-shaped translucent portion;
45-microwell; 46-a line-shaped translucent portion; 47-transparent portion.
Detailed Description
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
FIG. 3 is a schematic view of a mask plate according to the present invention. The mask plate of the present invention is composed of a transparent substrate 31, a translucent film 32 and an opaque film 33, and is formed with a completely transmissive area a1, an opaque area B1 and a partially transmissive area C1. The partial light transmission region C1 is formed by alternately arranging translucent portions C11 and transparent portions C12.
Preferably, the sum of the areas of the translucent portions C11 accounts for 50% to 75% of the total area of the partially light-transmitting regions C1. The translucent portion C11 may be embodied as a translucent film. The transparent part C12 may be slits formed by alternately arranging the translucent films, slits formed between the translucent films and the opaque films, or micro holes formed in the translucent films, or a transparent part composed of both slits and micro holes. The principle of the mask plate of the present invention is described below by taking a positive photoresist as an example.
When the mask plate is used, firstly, a layer of photoresist 10 is coated on a thin film material 20 which needs to form a pattern, a light source irradiates the mask plate, light penetrates through a complete light transmission area A1 to enable the area to become a complete exposure area, and the photoresist in the complete exposure area is completely removed after development to become a photoresist complete removal area A2; the light cannot penetrate through the opaque region B1 to enable the region to become an unexposed region, and the photoresist in the unexposed region is completely reserved after development to become a photoresist completely-reserved region B2; since the partially light-transmitting region C1 is formed by alternately arranging the translucent portions C11 and the transparent portions C12, light passes through the partially light-transmitting region C1, the photoresist in the partially light-transmitting region C1 is partially exposed to light to become a partially exposed region, and the photoresist in the partially exposed region is partially removed after development to become a photoresist partially-remaining region C2, and three regions having different photoresist thicknesses are formed, as shown in fig. 3.
The mask plate is a novel mask plate prepared by combining a gray-tone mask technology and a half-tone mask technology. Because the partial light transmission area C1 of the mask plate is formed by alternately arranging the semi-transparent part C11 (such as a semi-transparent film) and the transparent part C12 (such as a slit formed between the semi-transparent film and an opaque film), when the partial transmission area C1 of the mask plate is irradiated by light, interference can be generated by the light transmitted through the slit, and a certain range of light intensity distribution is formed in the area below the semi-transparent film; since the translucent film itself has a certain transmittance, light can also partially transmit through the translucent film. The light intensity distribution occurring due to the interference effect is superimposed with the partially transmitted light intensity by the translucent film, so that the photoresist under the partially light-transmitting region C1 is uniformly exposed. Compared with the common gray-tone mask plate with the light interference effect shown in fig. 1, the light shading strip of the mask plate adopts the semitransparent film, so that when the distance difference from a certain point on the upper surface of the photoresist to the double slits is equal to the odd multiple of the half wavelength of incident light, the light intensity on the region with the dark fringe distribution (namely, the region corresponding to the middle part of the semitransparent film) is formed, the light intensity penetrating through the semitransparent film can be compensated, the photoresist below a partial exposure region can be uniformly exposed, a flat exposure surface is formed, and the wavy (Ripple) exposure surface shown in fig. 1 is avoided. Compared with the common halftone mask plate for adjusting the light transmittance through the semi-transparent film shown in fig. 2, the edge part of the exposure surface in the shape of an ellipsoid is formed by light through the semi-transparent film, and the light intensity formed by light interference is compensated, so that the photoresist inclination angle a3 on the edge of the photoresist part reserved area is larger than the photoresist inclination angle a2 on the edge of the exposure surface in the shape of an ellipsoid, and the etching precision is favorably ensured.
According to the analysis, the mask plate is beneficial to uniform exposure of the photoresist below a part of light transmitting area, so that the surface of the photoresist on a part of reserved area of the photoresist is smooth, meanwhile, the inclination angle of the photoresist on the edge of the part of reserved area of the photoresist is increased, the etching precision is guaranteed, and the stability of final detection of the critical dimension in the etching process of the array substrate under the part of reserved area of the photoresist is guaranteed. In addition, the mask plate is adopted to partially expose the photoresist, and the light intensity distributed below a partial light transmission area comprises the light intensity of interference of the slits or the micropores and the light intensity of light transmitting the semitransparent film. The light intensity of the mask plate is higher than that of the common half-tone mask technology or gray-tone mask technology when the light irradiates the partial transmission area of the mask plate, so that the mask plate is beneficial to shortening the exposure time of the photoresist on the premise of realizing the same exposure degree of the photoresist, and is beneficial to improving the productivity.
The gray-tone mask technology or the half-tone mask technology is one of core technologies in a patterning process of 4 patterning or less of the TFT-LCD array substrate structure. A mask plate used for forming a TFT channel pattern in the TFT-LCD array substrate preparation process comprises an opaque area, a complete light-transmitting area and a partial light-transmitting area; the light-tight region comprises a first light-tight region corresponding to the source electrode pattern of the array substrate and a second light-tight region corresponding to the drain electrode pattern of the array substrate, the first light-tight region and the second light-tight region are arranged in a matched mode and are not connected, and a part of light-transmitting region corresponding to the TFT channel pattern of the array substrate is arranged between the first light-tight region and the second light-tight region. The technical scheme of the mask plate is described below by taking the mask plate used for forming the U-shaped TFT channel pattern in the TFT-LCD array substrate preparation process as an example.
Fig. 4 is a schematic structural diagram of a mask plate according to a first embodiment of the present invention. As shown in fig. 4, the mask plate of the present embodiment includes opaque regions, completely transparent regions and partially transparent regions; the light-tight area comprises a first light-tight area corresponding to the source electrode pattern of the array substrate and a second light-tight area corresponding to the drain electrode pattern of the array substrate. For the mask for forming the U-shaped TFT channel, the shape of the first opaque region is U-shaped, hereinafter referred to as the U-shaped opaque region 41; the shape of the second opaque region is T-shaped (only the pattern of the drain electrode of the array substrate corresponding to the source electrode is shown in the figure), which is hereinafter referred to as T-shaped opaque region 42; the U-shaped opaque region 41 and the T-shaped opaque region 42 are disposed in a convex-concave fit and are not connected. Between the U-shaped opaque region 41 and the T-shaped opaque region 42 is a partially transparent region corresponding to the TFT channel pattern. The partially light-transmitting region includes n translucent portions (the shape of the translucent portions is U-shaped, hereinafter referred to as U-shaped translucent portions 44) and n +1 transparent portions (the shape of the translucent portions is U-shaped, hereinafter referred to as U-shaped transparent portions 43), the n U-shaped translucent portions 44 and the n +1 transparent portions 43 being symmetrically and alternately arranged along a symmetry line of the T-shaped opaque region 42; n is an integer greater than or equal to 1. In fig. 4, a case where n is equal to 1 is shown, that is, a part of the light transmitting area of the mask plate shown in fig. 4 includes 1U-shaped translucent portion 44 and 2U-shaped transparent portions 43. The U-shaped translucent portions 44, the U-shaped opaque regions 41 and the T-shaped opaque regions 42 are alternately arranged. A slit, i.e. the U-shaped transparent portion 43, is formed between the U-shaped translucent portion 44 and the U-shaped opaque region 41 and between the U-shaped translucent portion 44 and the T-shaped opaque region 42.
The situation where n equals 4 is shown in fig. 5. FIG. 5 is a schematic structural diagram of a mask blank according to another embodiment of the present invention. The partial transmitting area of the mask plate shown in fig. 5 includes 4U-shaped translucent portions 44 and 5U-shaped transparent portions 43. In actual use, the width of each slit and the width of the translucent film may be designed according to a pre-designed TFT channel shape.
The proportional relationship between the width D1 of the U-shaped transparent portion 43 and the width D of the U-shaped translucent portion 44 in this embodiment satisfies: 1 ≦ D/D1 ≦ 6, preferably, the proportional relationship between D and D1 satisfies: D/D1 is more than or equal to 2 and less than or equal to 3. The sum of the areas of the U-shaped translucent portions 44 accounts for 50% to 75% of the area of the partially light-transmitting region.
The opaque regions such as the U-shaped opaque region 41 and the T-shaped opaque region 42 may be formed of Cr, Mn, or Mo, or an alloy thereof. The translucent portion 44 may be selected from oxides or nitrides of Cr, Mn or Mo, such as: CrOx, CrNx, MnOx, MnNx, MoOx or MoNx, and also can be formed by oxide or nitride of Cr alloy material, oxide or nitride of Mn alloy material, oxide or nitride of Mo alloy material, and the like. The sum of the widths of the U-shaped translucent portion 44 and the two U-shaped transparent portions 43 in fig. 4 is the length of the TFT channel of the pre-designed array substrate. Since the lengths of the TFT channels under the array substrates of different specifications are different, the specific dimensions of the U-shaped transparent portion 43 and the U-shaped translucent portion 44 in the mask design can be designed according to the actually designed TFT channel width. The TFT channel length is typically 3000nm to 6000 nm. The width D of the U-shaped translucent portion 44 is 900nm to 1500nm, and preferably, the width D of the U-shaped translucent portion 44 is 200nm to 1200 nm. The width d1 of the U-shaped transparent part 43 is 250nm to 900nm, preferably the width d1 of the U-shaped transparent part 43 is 100nm to 1500 nm. The sum of the areas of the U-shaped translucent portions 44 may account for 50% to 75% of the area of the partially light transmitting region. The case similar to fig. 5 can be designed according to the proportional relation of D1 and D and the variation of n.
When the mask plate of the present embodiment is used, the U-shaped opaque region 41 corresponds to a region on the array substrate for forming a source electrode, the T-shaped opaque region 42 corresponds to a region on the array substrate for forming a drain electrode (only a drain electrode region cooperating with the source electrode is shown in the figure), and a part of the transparent region corresponds to a region on the array substrate for forming a TFT channel. Since the partial light-transmitting area of the present embodiment is composed of n + 1U-shaped transparent portions 43 and n U-shaped translucent portions 44, when light irradiates the partial light-transmitting area of the mask plate, light passing through the U-shaped transparent portions 43 interferes, a certain light intensity distribution is formed below the partial light-transmitting area, and at the same time, light irradiating the U-shaped translucent portions 44 can partially pass through, and a certain light intensity distribution is also formed below the partial light-transmitting area. The light intensity distribution formed by the interference and the light intensity distribution formed by the transmission are superimposed on each other.
Compared with the common gray-tone mask plate (the shielding strips included in the partial light transmission area of the common gray-tone mask plate are opaque parts), the shielding strips included in the partial light transmission area of the mask plate are U-shaped semitransparent parts, so that semi-transmission light intensity is added in the area with light intensity formed by double-slit interference, the photoresist part used for forming the upper part of a TFT channel area on the array substrate is exposed, the exposure degree is uniform, a smooth surface is formed, TFT channel etching is facilitated, the probability of the occurrence of defects such as source and drain short circuit or channel overetching is reduced, and the yield of the array substrate is improved. In addition, compared with the common halftone mask plate, the light intensity below the partial light transmission area of the embodiment comprises interference light intensity and partial transmission light intensity, so that the light intensity distribution of a light source is dispersed, the problem that the inclination angle of a channel formed by light gathering is too small is solved, the inclination angle of the photoresist on the edge of the partial photoresist retention area is increased, the accurate control of the process in the process of forming the TFT channel is facilitated, and the stability of final detection of the key size in the etching process of the array substrate under the partial photoresist retention area is facilitated to be ensured.
Fig. 6 is a structural schematic diagram of a mask plate according to a second embodiment of the invention. As shown in fig. 6, the present embodiment is different from the embodiment shown in fig. 4 in that a plurality of micropores 45 are further formed on the U-shaped translucent portion 44 of the present embodiment. The micro-holes 45 and the U-shaped transparent portion 43 together constitute a transparent portion of the mask plate of the present invention. The sum of the area of all the micro-holes 45 and the area of the U-shaped transparent area accounts for 25% -50% of the partial light-transmitting area. The specific shape of the micro-holes 45 can be set according to the actual design requirement, and fig. 6 shows that the cross-sectional area of the micro-holes 45 is circular. Further, the cross-sectional shape of the micro-holes 45 may be square, polygonal, star-shaped, a combination thereof, or the like.
Further, according to the distribution characteristics of the diffraction light intensity: that is, the light intensity in the central region is strong and the light intensity in the edge region is weak, and the number of micropores or the pore size of micropores formed in different regions of the same translucent portion is different. For example: along the radiation direction from the outline line of the semi-transparent part to the inside of the semi-transparent part, the number distribution of micropores formed on the semi-transparent part is changed from dense to sparse, the number of micropores formed on the area close to the internal center line of the semi-transparent part is small, and the number of micropores formed on the area close to the external outline line of the semi-transparent part is gradually increased. Along the radiation direction from the outline line of the semi-transparent part to the inside of the semi-transparent part, the aperture of the micropores arranged on the semi-transparent part is changed from large to small, the aperture of the micropores arranged on the area close to the internal central line of the semi-transparent part is small, and the aperture of the micropores arranged on the area close to the external outline line of the semi-transparent part is large.
In this embodiment, on the basis of the technical solution of the embodiment shown in fig. 5, a plurality of micropores 45 are respectively formed on the plurality of U-shaped translucent portions 44, which is not described again.
In the practical use process of the mask plate, the micropores are formed in the U-shaped semitransparent portion, light intensity generated by mutual interference of light penetrating through the micropores, light intensity generated by interference of the U-shaped semitransparent portion and light intensity of the light-transmitting U-shaped semitransparent portion are mutually superposed, so that a smooth surface of a photoresist portion retaining area is favorably formed, TFT channel etching is favorably realized, the yield of the array substrate is improved, meanwhile, the photoresist inclination angle of the edge of the photoresist portion retaining area is increased, and accurate control of the process in the TFT channel forming process is favorably realized. In the embodiment, the total light intensity of the light transmission area is enhanced, so that the exposure time is saved on the premise of achieving the same exposure degree of the photoresist, and the productivity is improved.
Fig. 7 is a schematic structural diagram of a mask plate according to a third embodiment of the present invention. As shown in fig. 7, the light transmitting area of the mask plate portion of the present embodiment includes 1U-shaped translucent portion 44, and the U-shaped translucent portion 44 is provided with micro holes 45. The micro-holes 45 are the transparent parts of the present invention. The sum of the areas of all the micropores 45 accounts for 25-50% of the area of the partial light-transmitting region. When light shines this embodiment mask plate, light not only can pass through the translucent part transmission of U-shaped, and in addition, light still can pass through micropore 45 and transmit out, and the light that transmits out through micropore 45 takes place to interfere, interferes light intensity and half transmission light intensity and superposes each other for the photoresist of partial printing opacity regional below can obtain the exposure of uniform degree, and is favorable to increasing the angle of inclination at photoresist edge.
The cross-sectional shape of the micro-holes 45 may be circular, square, polygonal, or star-shaped, or a combination thereof. Further, according to the distribution characteristics of the diffraction light intensity: that is, the light intensity in the central region is strong and the light intensity in the edge region is weak, and the number of micropores or the pore size of micropores formed in different regions of the same translucent portion is different. For example: along the radiation direction from the outline line of the semi-transparent part to the inside of the semi-transparent part, the distribution of the number of micropores opened on the semi-transparent part is changed from dense to sparse, the number of micropores opened on the area close to the internal center line of the semi-transparent part is less, and the number of micropores opened on the area close to the external outline line of the semi-transparent part is gradually increased (as shown in fig. 7). Along the radiation direction from the outline line of the semi-transparent part to the inside of the semi-transparent part, the aperture of the micropores arranged on the semi-transparent part is changed from large to small, the aperture of the micropores arranged on the area close to the internal central line of the semi-transparent part is small, and the aperture of the micropores arranged on the area close to the external outline line of the semi-transparent part is large.
Fig. 8 is a schematic structural diagram of a mask plate according to a fourth embodiment of the present invention. As shown in fig. 8, in the light transmitting region of the mask plate portion of the present embodiment, the translucent portions are line-shaped translucent portions 46, and transparent portions 47 are provided between adjacent line-shaped translucent portions 46; a plurality of in-line translucent portions 46 are symmetrically arranged in the T-shaped opaque region 42 in the partial translucent region between the two arms of the U-shaped opaque region 41 and the T-shaped opaque region 42; in the partially transparent region between the bottom of the U-shaped opaque region 41 and the end of the T-shaped opaque region 42, a plurality of in-line translucent portions 46 are arranged parallel to the arms of the U-shaped opaque region 41. Adjacent in-line translucent portions 46 are separated by a transparent portion 47.
Obviously, in the above technical solution, the shape of the translucent portion is not limited to a straight line shape, but can also be an S-shaped shape,
And the like. In addition, the translucent portion may also be provided with micropores as needed, and the specific shape of the micropores and the distribution of the micropores on the translucent portion are described with reference to the corresponding description of the embodiment shown in fig. 7, which is not repeated. In addition, the area where the micro-holes are located also belongs to the transparent part, and the area occupied by the transparent part is 25% -50% of the area of the partial light-transmitting area.
In the practical use process of the mask plate, as part of the light transmission area is formed by alternately arranging the line-shaped semitransparent parts and the transparent parts, the light intensity formed below the part of the light transmission area can comprise the light intensity transmitted by the line-shaped semitransparent parts and the light intensity formed by mutually interfering with the light transmitted by the transparent parts, and the light intensity is mutually superposed, so that the smooth surface of the photoresist part retaining area is favorably formed, the TFT channel etching is favorably controlled, the yield of the array substrate is improved, meanwhile, the photoresist inclination angle at the edge of the photoresist part retaining area is increased, and the accurate control of the process in the process of forming the TFT channel is favorably realized. In the embodiment, the total light intensity of the light transmission area is enhanced, so that the exposure time is saved on the premise of achieving the same exposure degree of the photoresist, and the productivity is improved.
FIG. 9 is a flowchart of an embodiment of a method for manufacturing a mask blank according to the present invention. As shown in fig. 9, the preparation process of the mask plate of the present embodiment includes:
And 2, coating photoresist on the substrate subjected to the step 1 to perform a first laser patterning process, reserving the opaque metal material layer on the opaque region, and removing the opaque metal material layer in other regions outside the opaque region.
And 4, coating photoresist on the substrate subjected to the step 3, and performing a second laser patterning process to form a partial light-transmitting area pattern. The partial light-transmitting area comprises a semitransparent part and a transparent part which are alternately arranged; the translucent material layer under the translucent portion is left and the translucent material layer under the translucent portion is completely removed.
On the basis of the above technical solution, in step 1, the opaque metal material layer may be formed by using Cr, Mn or Mo, or an alloy material of the above metals.
On the basis of the technical scheme, in the step 2, the light-tight area can comprise a first light-tight area corresponding to the source electrode pattern of the array substrate and a second light-tight area corresponding to the drain electrode pattern of the array substrate; the first light-tight region and the second light-tight region are arranged in a matched mode and are not connected, and the region between the first light-tight region and the second light-tight region is a partial light-transmitting region corresponding to the array substrate and used for forming the TFT channel pattern. The specific shape of the first light-tight area can be designed according to the pattern of the array base source electrode, and the specific shape of the second light-tight area can be designed according to the pattern of the array base drain electrode; for example: when the source electrode pattern is U-shaped, the first light-tight area is U-shaped, namely the U-shaped light-tight area; when the pattern of the drain electrode region matched with the source electrode is T-shaped, the shape of the second light-tight region is T-shaped, namely the T-shaped light-tight region.
On the basis of the above technical solution, in step 3, the translucent material layer may be formed by using an oxide or nitride of an alloy material of CrOx, CrNx, MnOx, MnNx, MoOx, MoNx, Cr, an oxide or nitride of an alloy material of Mn, an oxide or nitride of an alloy material of Mo, or the like.
On the basis of the above technical solution, in step 4, preferably, the translucent portion occupies 50% to 75% of the total area of the partial light-transmitting area. The specific shape of the semitransparent part can be designed according to the shape of the array substrate TFT channel, for example: in the case where the TFT channel shape is U-shaped, the shape of the partial light-transmitting region is U-shaped, and in the U-shaped partial light-transmitting region, the translucent portion may be a U-shaped translucent portion or a straight translucent portion, or the like. The specific shape of the transparent portion may also vary accordingly depending on the shape of the translucent portion, for example: the transparent part is a U-shaped transparent part, a round micropore, a square micropore and the like.
The partial light transmission area of the mask plate formed by the mask plate preparation method comprises a transparent part and a semitransparent part, so that in the actual use process of the mask plate, the light intensity formed below the partial light transmission area can comprise the light intensity transmitted by the semitransparent part and the light intensity formed by mutual interference of the light transmitted by the transparent part, and the light intensity is mutually superposed, thereby being beneficial to forming a smooth surface of a photoresist partial retention area, being beneficial to etching a TFT channel, improving the yield of an array substrate, simultaneously increasing the photoresist inclination angle at the edge of the photoresist partial retention area, and being beneficial to carrying out accurate control on the process in the process of forming the TFT channel. In the embodiment, the total light intensity of the light transmission area is enhanced, so that the exposure time is saved on the premise of achieving the same exposure degree of the photoresist, and the productivity is improved.
The above embodiment of the present invention is described by taking a mask plate used for forming a TFT channel pattern by using a positive photoresist in a TFT-LCD array substrate manufacturing process as an example. As can be understood by those skilled in the art, if a negative photoresist is used in the TFT-LCD array substrate manufacturing process to form a mask used for forming the TFT channel pattern, the difference from the mask detailed in the above embodiments of the present invention is that the light-transmitting region of the mask includes a first light-transmitting region corresponding to the source electrode pattern and a second light-transmitting region corresponding to the drain electrode pattern; and a part of light-transmitting area corresponding to the TFT channel pattern is arranged between the first light-transmitting area and the second light-transmitting area.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (15)
1. A mask plate comprises an opaque area, a completely transparent area and a partially transparent area, and is characterized in that the partially transparent area is formed by alternately arranging a semitransparent part and a transparent part.
2. The mask plate of claim 1 wherein the sum of the areas of the translucent portions is 50% to 75% of the total area of the partially transmissive regions.
3. According to claimThe mask blank of claim 1, wherein the thickness of the translucent portion is 900 a
～1500
4. The mask blank according to claim 1,
the light-tight region comprises a first light-tight region corresponding to the source electrode pattern and a second light-tight region corresponding to the drain electrode pattern, and the part of light-transmitting region corresponding to the TFT channel pattern is arranged between the first light-tight region and the second light-tight region; or,
the complete light transmission area comprises a first light transmission area corresponding to the source electrode pattern and a second light transmission area corresponding to the drain electrode pattern, and the partial light transmission area corresponding to the TFT channel pattern is arranged between the first light transmission area and the second light transmission area.
5. The mask plate of claim 4, wherein the partially transparent regions comprise n translucent portions and n +1 transparent portions, the n translucent portions and the n +1 transparent portions being symmetrically and alternately arranged along a symmetry line of the second opaque region or the second transparent region; n is an integer greater than or equal to 1.
6. The mask blank according to claim 5, wherein the width of the translucent portion is 900nm to 1500nm, and the width of the transparent portion is 200nm to 1200 nm.
7. The mask blank according to claim 5, wherein the width of the translucent portion is 1000nm to 1200nm, and the width of the transparent portion is 250nm to 900 nm.
8. The mask plate according to claim 4, wherein the first opaque region is a U-shaped opaque region, the second opaque region is a T-shaped opaque region, the translucent portions are in-line translucent portions, and a transparent portion is arranged between adjacent in-line translucent portions; a plurality of in-line semitransparent parts are symmetrically arranged on a part of light transmission area between two arms of the U-shaped light-tight area and the T-shaped light-tight area according to the symmetry line of the T-shaped light-tight area; and a plurality of linear semitransparent parts are arranged in a partial light transmission area between the bottom of the U-shaped light-proof area and the end part of the T-shaped light-proof area and parallel to the arm part of the U-shaped light-proof area.
9. The mask plate according to any one of claims 5 to 8, wherein the translucent portion is provided with micro-holes.
10. The mask plate according to claim 9, wherein the cross-sectional shape of the micro-holes is circular, square, polygonal or star-shaped, or a combination thereof.
11. The mask blank according to claim 9, wherein the number distribution of the micro holes formed in the translucent portion varies from dense to sparse along the contour line of the translucent portion in a radial direction within the translucent portion, or the aperture of the micro holes formed in the translucent portion varies from large to small.
12. The mask blank according to claim 4, wherein the transparent portion is a plurality of micro-holes, and the plurality of micro-holes are formed in the translucent portion, and the portions of the translucent portion not having the micro-holes are arranged alternately with the micro-holes.
13. The mask plate according to claim 12, wherein the cross-sectional shape of the micro-holes is circular, square, polygonal or star-shaped, or a combination thereof.
14. The mask blank according to claim 12 or 13, wherein the number distribution of the micro holes formed in the translucent portion varies from dense to sparse along the contour line of the translucent portion in the radial direction within the translucent portion, or the pore size of the micro holes formed in the translucent portion varies from large to small.
15. A preparation method of a mask plate is characterized by comprising the following steps:
step 1, depositing the film on a transparent substrate to a thickness of 1000A
～3000The opaque metallic material layer of (a);
step 2, performing a first laser patterning process on the substrate subjected to the step 1, reserving the opaque metal material layer on the opaque region, and removing the opaque metal material layer in other regions outside the opaque region;
step 3, depositing the substrate with the thickness of 900 on the substrate after the step 2
～1500
A layer of translucent material;
step 4, performing a second laser composition process on the substrate subjected to the step 3 to form a part of light-transmitting area graph; the partial light-transmitting area comprises semitransparent parts and transparent parts which are alternately arranged; the translucent material layer under the translucent portion is left and the translucent material layer under the translucent portion is completely removed.
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| CN2008102268141A CN101738846B (en) | 2008-11-17 | 2008-11-17 | Mask plate and manufacture method thereof |
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| CN2008102268141A CN101738846B (en) | 2008-11-17 | 2008-11-17 | Mask plate and manufacture method thereof |
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| CN101738846B CN101738846B (en) | 2012-02-29 |
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