CN101212016A - Complementary metal oxide layer semiconductor magnetic sensor - Google Patents
Complementary metal oxide layer semiconductor magnetic sensor Download PDFInfo
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- CN101212016A CN101212016A CNA200610171657XA CN200610171657A CN101212016A CN 101212016 A CN101212016 A CN 101212016A CN A200610171657X A CNA200610171657X A CN A200610171657XA CN 200610171657 A CN200610171657 A CN 200610171657A CN 101212016 A CN101212016 A CN 101212016A
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Abstract
The invention relates to the technical field of a magnetic sensor used in an information collecting system and discloses a CMOS magnetic sensor, which comprises a bias circuit used for providing a DC working point for a MagFET current mirror and a differential amplifier; the MagFET current mirror used for transforming a magnetic signal into a double-ended electrical signal and transmitting the signal to the differential amplifier; the differential amplifier used for transforming the double-ended electrical signal inputted by the MagFET current mirror into a single-ended signal, amplifying the signal and transmitting the signal to a voltage controlled oscillator; the voltage controlled oscillator used for transforming the single-ended signal inputted by the differential amplifier into a frequency signal and outputting the signal. By adopting the invention, the power consumption is greatly reduced, and the sensitivity is improved as well.
Description
Technical field
The present invention relates to be used for the Magnetic Sensor technical field of information acquisition system, relate in particular to a kind of complementary metal oxide layer semiconductor (CMOS) Magnetic Sensor.
Background technology
Magnetic Sensor is a most important building block in the magnetic field detection.And low-power consumption, high sensitivity, the technologic Magnetic Sensor of CMOS designs the RFID tag of belt sensor function especially and sets up the key technology of wireless sensor network.
Magnetic field induction field-effect transistor (MagFET) is a device of realizing the magnetoelectricity conversion on CMOS technology.When the magnetic field perpendicular to the chip that MagFET is arranged existed, the electric current that flows through the MagFET drain electrode will change along with the variation of vertical magnetic field size.But it is very little that this variation has only, and probably is 7%/T, at the magnetic signal that is difficult to detect the mT level under the situation of amplifying.
RFID tag is very harsh to the requirement of power consumption, and is particularly passive radio-frequency identification labeled.Though it is low in energy consumption to use single MagFET that magnetic signal is converted to the signal of telecommunication, sensitivity is also lower.Adopt multistage MagFET current mirror can improve gain, but power consumption also increase thereupon.
For passive radio-frequency identification labeled, the power consumption of transducer generally will be lower than 1uW, the operating distance of the unconspicuous shortening label of ability.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of CMOS Magnetic Sensor, to reduce power consumption, improves sensitivity.
(2) technical scheme
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of complementary metal oxide layer semiconductor (CMOS) Magnetic Sensor, this Magnetic Sensor comprises:
One biasing circuit is used to magnetic field induction field-effect transistor (MagFET) current mirror and differential amplifier that dc point is provided;
One MagFET current mirror is used for magnetic signal is converted to the both-end signal of telecommunication, and exports to differential amplifier;
One differential amplifier is used for both-end electrical signal conversion with MagFET current mirror input and is single-ended signal and signal is amplified, and exports to voltage controlled oscillator;
One voltage controlled oscillator is used for that differential amplifier is imported single-ended signal and is converted to frequency signal output.
Described MagFET current mirror is a magnetoelastic transducer, is connected and composed by the MagFET of a N type and a P type.
The grid of described P type MagFET is received in the drain electrode of himself; The grid voltage of described N type MagFET is provided by described biasing circuit, the size of current of control MagFET current mirror.
Two inputs of described differential amplifier are received respectively on the MagFET cross-connect cable of N type and P type, transfer the both-end output signal of MagFET to single-ended output signal, simultaneously signal are amplified.
Described differential amplifier is the CMOS differential amplifier of an one-level.
Described voltage controlled oscillator is made of a converter and the oscillating circuit based on rest-set flip-flop.
Described converter is by a resistance, and the metal-oxide-semiconductor current mirror of the metal-oxide-semiconductor of a N type and a P type constitutes.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this CMOS Magnetic Sensor provided by the invention adopts widely used CMOS technology to make, and has low in energy consumption and highly sensitive advantage, greatly reduces power consumption, has improved sensitivity.
2, this CMOS Magnetic Sensor provided by the invention, owing to have low in energy consumption and highly sensitive advantage, so improved the operating distance of passive label greatly.
Description of drawings
Fig. 1 is the structured flowchart of CMOS Magnetic Sensor provided by the invention;
Fig. 2 is the circuit diagram of CMOS Magnetic Sensor provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the structured flowchart of CMOS Magnetic Sensor provided by the invention, and this Magnetic Sensor comprises biasing circuit 10, MagFET current mirror 11, differential amplifier 12 and 13 4 parts of voltage controlled oscillator.
Wherein, biasing circuit 10 is used to MagFET current mirror and differential amplifier that dc point is provided.MagFET current mirror 11 is used for magnetic signal is converted to the both-end signal of telecommunication, and exports to differential amplifier.Differential amplifier 12 is used for both-end electrical signal conversion with MagFET current mirror input to be single-ended signal and signal is amplified, and exports to voltage controlled oscillator.Voltage controlled oscillator 13 is used for that differential amplifier is imported single-ended signal and is converted to frequency signal output.
Described MagFET current mirror 11 is a magnetoelastic transducer, is connected and composed by the MagFET of a N type and a P type.The grid of described P type MagFET is received in the drain electrode of himself; The grid voltage of described N type MagFET is provided by described biasing circuit, the size of current of control MagFET current mirror.
Two inputs of described differential amplifier 12 are received respectively on the MagFET cross-connect cable of N type and P type, transfer the both-end output signal of MagFET to single-ended output signal, simultaneously signal are amplified.Described differential amplifier is the CMOS differential amplifier of an one-level.
Described voltage controlled oscillator 13 is made of a converter and the oscillating circuit based on rest-set flip-flop.Described converter is by a resistance, and the metal-oxide-semiconductor current mirror of the metal-oxide-semiconductor of a N type and a P type constitutes.
Based on the structured flowchart of the described CMOS Magnetic Sensor of Fig. 1, Fig. 2 shows the circuit diagram of CMOS Magnetic Sensor provided by the invention.Its MagFET current mirror is a magnetoelastic transducer, and it is reported to the leadship after accomplishing a task by the MagFET of a N type and a P type and connects and composes.Its amplifier is the CMOS differential amplifier of an one-level.Its voltage-current converter is by a resistance, and the metal-oxide-semiconductor current mirror of the metal-oxide-semiconductor of a N type and a P type constitutes.Its current control oscillator is a pierce circuit based on rest-set flip-flop.Frequency signal is from the output of Vout end
Low-power consumption provided by the invention, highly sensitive CMOS Magnetic Sensor are applied among the passive radio-frequency identification labeled IC, passive radio-frequency identification labeled IC circuit design and layout design have been carried out, the result of test is 1mT for the minimum magnetic signal that can detect, lowest power consumption is 0.65uW, proof the present invention has reduced power consumption conscientiously, has improved sensitivity.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. complementary metal oxide layer semiconductor CMOS Magnetic Sensor is characterized in that this Magnetic Sensor comprises:
One biasing circuit is used to magnetic field induction field effect transistor M agFET current mirror and differential amplifier that dc point is provided;
One MagFET current mirror is used for magnetic signal is converted to the both-end signal of telecommunication, and exports to differential amplifier;
One differential amplifier is used for both-end electrical signal conversion with MagFET current mirror input and is single-ended signal and signal is amplified, and exports to voltage controlled oscillator;
One voltage controlled oscillator is used for that differential amplifier is imported single-ended signal and is converted to frequency signal output.
2. CMOS Magnetic Sensor according to claim 1 is characterized in that, described MagFET current mirror is a magnetoelastic transducer, is connected and composed by the MagFET of a N type and a P type.
3. CMOS Magnetic Sensor according to claim 2 is characterized in that, the grid of described P type MagFET is received in the drain electrode of himself; The grid voltage of described N type MagFET is provided by described biasing circuit, the size of current of control MagFET current mirror.
4. CMOS Magnetic Sensor according to claim 1, it is characterized in that, two inputs of described differential amplifier are received respectively on the MagFET cross-connect cable of N type and P type, transfer the both-end output signal of MagFET to single-ended output signal, simultaneously signal are amplified.
5. according to claim 1 or 4 described CMOS Magnetic Sensors, it is characterized in that described differential amplifier is the CMOS differential amplifier of an one-level.
6. CMOS Magnetic Sensor according to claim 1 is characterized in that, described voltage controlled oscillator is made of a converter and the oscillating circuit based on rest-set flip-flop.
7. CMOS Magnetic Sensor according to claim 6 is characterized in that, described converter is by a resistance, and the metal-oxide-semiconductor current mirror of the metal-oxide-semiconductor of a N type and a P type constitutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200610171657XA CN101212016A (en) | 2006-12-31 | 2006-12-31 | Complementary metal oxide layer semiconductor magnetic sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200610171657XA CN101212016A (en) | 2006-12-31 | 2006-12-31 | Complementary metal oxide layer semiconductor magnetic sensor |
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| CN101212016A true CN101212016A (en) | 2008-07-02 |
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| CNA200610171657XA Pending CN101212016A (en) | 2006-12-31 | 2006-12-31 | Complementary metal oxide layer semiconductor magnetic sensor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124303B (en) * | 2008-08-15 | 2013-05-15 | 西门子能源公司 | Wireless telemetry electronic circuitry for measuring strain in high-temperature environments |
| TWI451103B (en) * | 2009-09-03 | 2014-09-01 | Applied Materials Inc | Testing apparatus and relative method |
| CN107452811A (en) * | 2016-05-31 | 2017-12-08 | 英飞凌科技股份有限公司 | Spinning current method for MAGFET sensors |
| CN110519535A (en) * | 2019-09-03 | 2019-11-29 | 天津大学 | A kind of Novel pixel structure of high sensitivity Larger Dynamic range |
-
2006
- 2006-12-31 CN CNA200610171657XA patent/CN101212016A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124303B (en) * | 2008-08-15 | 2013-05-15 | 西门子能源公司 | Wireless telemetry electronic circuitry for measuring strain in high-temperature environments |
| TWI451103B (en) * | 2009-09-03 | 2014-09-01 | Applied Materials Inc | Testing apparatus and relative method |
| CN107452811A (en) * | 2016-05-31 | 2017-12-08 | 英飞凌科技股份有限公司 | Spinning current method for MAGFET sensors |
| US10739417B2 (en) | 2016-05-31 | 2020-08-11 | Infineon Technologies Ag | Spinning current method for MagFET-sensor |
| CN107452811B (en) * | 2016-05-31 | 2021-05-04 | 英飞凌科技股份有限公司 | Spin current method for MAGFET sensor |
| CN110519535A (en) * | 2019-09-03 | 2019-11-29 | 天津大学 | A kind of Novel pixel structure of high sensitivity Larger Dynamic range |
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Open date: 20080702 |