CN100447573C - Fiducial alignment mark on microelectronic spring contact - Google Patents
Fiducial alignment mark on microelectronic spring contact Download PDFInfo
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- CN100447573C CN100447573C CNB028295919A CN02829591A CN100447573C CN 100447573 C CN100447573 C CN 100447573C CN B028295919 A CNB028295919 A CN B028295919A CN 02829591 A CN02829591 A CN 02829591A CN 100447573 C CN100447573 C CN 100447573C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06738—Geometry aspects related to tip portion
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06794—Devices for sensing when probes are in contact, or in position to contact, with measured object
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
- G01R1/06727—Cantilever beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Microelectronics & Electronic Packaging (AREA)
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention discloses a microelectronic spring contact with fiducial alignment marks for using on a semiconductor wafer contactor or a similar device and a method for manufacturing the marks by a sacrificial base plate. Each alignment mark is positioned on a welded pad adjacent to a contact tip. The alignment mark is positioned on the welded pad so that the alignment mark does not contact a terminal or any other part of a wafer under the test. The alignment mark and the contact tip are preferably positioned on the welded pad in same microimage step, and then the welded pad and the similar welded pad are attached to the end of an elastic contact element array, wherein welded pads selected from the similar welded pads are provided with similar alignment marks. Consequently, the present invention discloses a plurality of alignment marks accurately aligned to a plurality of contact tips on a contactor. The present invention discloses a plurality of structures, such as the alignment marks with difference example shapes. The structure is used for ensuring that the alignment marks keep no chip and easy positioning during the whole service life of the contact.
Description
Technical field
The present invention relates to be used for the parts of semiconductor test, more specifically, relate to the benchmark alignment mark on the microelectronics contact of using on probe, contactor and the like.
Background technology
Semiconducter device testing (the especially wafer level test that carried out before the semiconductor devices on the wafer occurs unusually) uses usually and implements such as the parts with contactor assembly of a plurality of microelectronics contact, wherein the terminal pads on the equal contact wafer in each contact, bead or other this type of terminal.Because the spacing that is arranged between the terminal on the wafer is minimum, and the size of microelectronics contact structures is also corresponding less, therefore, need implement contact and the aligning of terminal on wafer by special aligned machine and method.
According to a kind of prior art alignment methods,, 3 alignment marks (being sometimes referred to as " benchmark " alignment mark) need be set on wafer at least in the device fabrication phase in early stage.Known these marks have very high precision with respect to the position of wafer upper terminal or contact weld pad.On contactor, there is not the suitable with it alignment mark of precision.This has limited the precision that is provided with of some type contactor, such as, those have the contactor of tungsten filament contact element.The tungsten filament contact can't be arranged on the contactor with high precision, therefore can not keep with the mark on the contactor aiming at.Yet, the contactor of some other type can have a plurality of extremely pinpoint spring contacts tip, such as being disclosed in (for example) United States Patent (USP) the 5th, 864, the contactor with composite contact in No. 946 (people such as Eldrige), these contacts have the contact tip structure that is provided with in little shadow mode.
Usually, one intend to position with half a precision that is at least on the wafer between the terminals of adjacent fine pitch (at interval) as the mark of an alignment mark.That is, must know for sure the position of this alignment mark is in its diameter is not more than half spherical area of spacing between the semiconductor devices upper terminal.For memory device, wherein most have about 80 a microns spacing (3.2 Mill), correspondingly needs a precision at least about 40 microns (1.6 Mills).Because wafer alignment marks is to form during the same lithographic step that forms the electronics pattern on the wafer being used for, thus its can needed precision setting on wafer.The contact tip that is provided with in little shadow mode on the contactor of some type also can be with suitable therewith precision setting on contactor.
According to the prior art alignment methods, can in these contact tips that are provided with in little shadow mode, select 3 or more the multiconductor tip for during follow-up positioning step as alignment mark.Usually, the less flat area on the distal tip of a contact tip is used as a visual target.Use recording geometry commonly used can more easily see and distinguish these flat area.Alignment mark on the use wafer and the selected contact tip on the contactor can relative to each other position wafer and contactor, thereby each contact tip on the contactor all can be contacted with the respective terminal on the wafer as reference point.Use the method, can contact with an array of terminals with minimum spacing setting.
Although above-mentioned alignment methods allows to show the superiority that exceeds out-of-date methods with aiming at the terminal of little extremely about 40 microns spacing setting because of it, it also is subjected to some restrictions.A restriction is relevant with use spring contact aligning contactor.During the repeated application contactor, these contact tips can be subjected to being tried on the wafer the chip that terminal produced (such as, metal oxide or organic residue) pollution, these chips generally can not disturb the electrical operation of contactor, but may be unfavorable for claimed accuracy selected contact tip being set.In addition, the target area on the contact tip can thicken unclear or be difficult to see.When also correspondingly reducing with the size of the terminal of littler spacing setting and contact tip on the measuring semiconductor, this restriction of art methods can become more obviously and overcome this restriction and cost dearly.Therefore, people's expectation provides a kind of the overcome restriction of art methods and still compatible mutually with the mounting base of observation and positioning system apparatus and method.
Summary of the invention
The invention provides a kind of in order to the benchmark alignment mark is provided on a contactor and overcome art methods restricted apparatus and method.
According to one embodiment of the invention, an alignment mark is arranged on the most advanced and sophisticated place of adjacent contacts on a zone or the weld pad.This alignment mark is positioned on the weld pad so that it can not contact is tried terminal or tried any other parts on the wafer, preferable its can keep not containing chip from contact tip after reusing contactor.Preferably, with same lithographic step alignment mark and contact tip are positioned on the weld pad.Then, with this weld pad and similar weld pad with the alignment mark of institute's assembly and contact tip attaching in the end of an elastic contact element array, some weld pads that wherein are selected from these similar weld pads also have similar alignment mark.Can provide on a contactor thus that a plurality of alignment marks and a plurality of contact tips are accurately to be aimed at.Can be easily at an accuracy rating bit alignment mark decided at the higher level but not officially announced at least about 3-5 micron (about 0.1 to 0.2 Mill), and therefore can be used for having wafer with the terminal of the fine pitch setting of about 20-30 micron (about 0.8-1.2 Mill).It is believed that also to reach more high precision, for example locate alignment mark with the precision of about 1.5 microns (0.06 Mills).In addition, these alignment marks (comprising any target area on it) can be positioned to keep no chip in the whole length of life of contactor basically, and therefore be easy to be provided with.Alignment mark can various shape provide, and this paper has disclosed some exemplary alignment marks wherein.
The those skilled in the art can by study following to preferred embodiment detailed description and fully understand the benchmark alignment mark more, and understand its extra advantage and purpose.Hereinafter set forth with reference to the accompanying drawings, and at first these accompanying drawings are simply set forth.
Description of drawings
Fig. 1 is the decline high enlargement ratio three-dimensional view of electronics spring contact of an overarm, and this cantilever style microelectronic spring contact has a cutting-edge structure of the present invention, and this cutting-edge structure has a common contact tip and an alignment mark that is provided with.
Fig. 2 A is the side view of spring contact shown in Figure 1.
Fig. 2 B is the side view of the cutting-edge structure of spring contact shown in Figure 1.
Fig. 3 A to 3C is the plan view that exemplary substitutes cutting-edge structure, and these cutting-edge structures have the contact and the alignment mark of the common setting that can be used for a spring contact.
Fig. 4 A to 4B is respectively the side view and the plan view of a spring contact tip portion, and it shows a circle pad-type alignment mark and an adjacent contact tips.
Fig. 5 A is the plan view of an exemplary contactor, and this contactor has a plurality of microelectronic springs contact, and the selected microelectronic spring contact of some of them has the cutting-edge structure of band the present invention's alignment mark.
Fig. 5 C to 5D has the cutting-edge structure of alignment mark on Fig. 5 A example illustrated contactor and the plan view that spring contact presents with continuous higher enlargement ratio.
Fig. 5 E is the plan view of a cutting-edge structure, the alignment mark that this cutting-edge structure is similar to the cutting-edge structure shown in Fig. 5 D and has an alternative form.
Fig. 6 is the stereographic map of a sacrificial substrate in the example steps of a method, and this method is used to make those cutting-edge structures shown in a plurality of Fig. 5 of being similar to A-5D.
Fig. 7 A is the cut-open view of the part of a sacrificial substrate shown in Figure 6, it is presented in the example steps of a method for forming a common contact tip that is provided with and the etch profile of alignment mark, and this method is used to form a spring contact with alignment mark of a present invention.
Fig. 7 B to 7D is a sacrificial substrate and execute the cut-open view of material layer thereon during the example steps of a method, and this method is used to form a spring contact with alignment mark of a present invention.
Fig. 7 E one is presented at during the exemplary attaching step one and has the cutting-edge structure of an alignment mark and the cut-open view of spring contact.
Fig. 8 A is a plan view, and it shows on the contactor substrate that one has the alternative structure of an alignment mark of the present invention and adjacent springs contact, and these spring contacts have less " little tip " contact tip.
Fig. 8 B is the cut-open view of substrate shown in Fig. 8 A and alternative structure.
Fig. 9 A to 9D is a sacrificial substrate and execute the cut-open view of material layer thereon during the example steps of a method, and this method is used to form recessed alignment marks and adjacent contact tips shown in Fig. 8 B.
Figure 10 A to 10C is the plan view of an exemplary cutting-edge structure during the step of a method, and this method is used for using behind the attaching contact tip instrument of making cutting-edge structure to form an alignment mark.
Embodiment
The invention provides a kind of method and apparatus is used for providing the accurate benchmark alignment mark on the microelectronics contact with on the contactor with a plurality of microelectronics contact.In the elaborating hereinafter, the similar elements shown in one or more accompanying drawing uses the components identical numeric character to describe.
With reference to Fig. 1, in one embodiment of this invention, on a microelectronic spring structures 100, provide an alignment mark 116.Spring structure 100 can variety of way well known in the prior art be constructed.In the embodiment shown in fig. 1, be to construct spring structure 100 according to the announcement in owning together of filing an application on Dec 22nd, 2000 and the co-pending application case No. 09/746716 (it incorporates this paper into way of reference in full).That is, microelectronic spring structures 100 comprise the overarm 102 on this group cartridge by diffusion of volatile treating agent of one group of cartridge by diffusion of volatile treating agent or post 104, a crosswise fixed, and one in this overarm away from the contact tip on the part of these cartridge by diffusion of volatile treating agent 114.In an alternate embodiment, be that the cylindrical part that uses a little shadow deposition to form replaces cartridge by diffusion of volatile treating agent 104, as (for example) owning together of filing an application and co-pending the 09/023rd, No. 859 application case discloses on February 13rd, 1998.Other example of the suitable microelectronic spring contact that can use with the present invention and make that the method for these contacts all is provided in to file an application (for example) on February 13rd, 1998 the 09/023rd, filed an application on July 30th, No. 859 1 the 09/364th, No. 788 and filed an application on November 9th, 2000 the 09/710th, No. 539 grades own together and co-pending application case in, the mode that these application cases are all quoted in full is incorporated herein.
Above-mentioned each application case has all disclosed some be used to the make method of microelectronic spring contact and made spring structures, and these methods are reached by depositing (for example by an electroplating) resilient material on the sacrifice layer on a substrate or in the sacrifice layer and removing this sacrifice layer subsequently.Using the forming tool of a special shape to impress one by (for example) can form a module by molded (plasticity) layer, sacrifice layer is formed have an inclination of extending away from substrate or the shape of shaped region on substrate.In this alternate embodiment, (or can in addition) this sacrifice layer of patterning provides a plurality of openings to expose the substrate under it.One inculating crystal layer is deposited on the sacrifice layer and/or exposed region of substrate, and implements patterning with the flat shape of expectation spring structure or parts.Then, elastic layer is coated on this inculating crystal layer.Remove sacrifice layer, stay beam, tip and/or post parts in case subsequently in addition assembly the structure that is similar to structure 100 is provided.In certain embodiments, because deposition/patterning step can provide one to have one and be attached to the base part and of substrate from the shaping of its extension and/or the spring structure of inclined beams, so need not assembly.Yet each structure in the said structure all can comprise a contact tip, and this contact tip uses one pattern-mask/etch process accurately to form also assembly to the spring contact structure.Therefore, the present invention can be easy to change into above-mentioned each structure and the method for being applicable to, and can be through changing to be applicable to that arbitrary other can accurately form the structure of the contact tip of a microelectronics contact structure equally.
As shown in Figure 1, microelectronics contact structure 100 comprises that one has the beam 102 of upper surface 108, and this upper surface 108 is as a reference surface for attaching one cutting-edge structure 110 usefulness.For reaching surface 108 accurate planarity, preferablely form beam 102 by a method for photolithography, for example,, of (for example) above-mentioned the 09/023rd, No. 859 application case by deposition one resilient material on a sacrifice layer or substrate.This paper employed " sacrifice layer " is meant and is deposited on the substrate and the material that removes from this substrate subsequently, for example photoresist during expectation parts or structure (for example, a microelectronic spring contact element) formation." sacrificial substrate " is meant and is attached to it on also subsequently the substrate that removes from these parts or structure during expectation parts or a structure (for example, microelectronic spring parts) forms.As long as structure 100 can provide a reference surface for attaching one contact tip 114 and/or a cutting-edge structure 110, then the remainder of structure 100 just can various mode be constructed.For the purpose of legend explaination the present invention one exemplary application, hereinafter will set forth the other parts of structure 100, but this should not be construed as the present invention and is subject to this.
The beam 102 of structure 100 is fixed to substrate 106 by cartridge by diffusion of volatile treating agent 104.Substrate 106 comprises that one is used for the contactor of semiconductor devices (for example, semiconductor wafer).These contactors often comprise that some abnormity of being made by stupalith are dull and stereotyped, and its opposed major surfaces is provided with plurality of terminals and its and has each terminal that is used for connecting on the first surface and the internal circuit of the respective terminal on the second surface.In an alternative embodiment, substrate 106 can comprise some other electronic unit, for example, and a probe or other printed circuit board (PCB); Semiconductor device, for example a silicon wafer or wafer; One stupalith or an electric connector.Cartridge by diffusion of volatile treating agent 104 is attached to a terminal (not shown) of substrate 106 usually, this terminal again and then be connected to the circuit component of an electronic unit, for example, an interconnection or built-in substrate, semiconductor wafer or circuit small pieces, one are produced or test interconnecting socket, a pottery or plastic semiconductor package or chip carrier.
Fig. 2 A has shown the side view of structure 100.Preferably, with respect to the alignment mark 116 that is provided with towards the free end of beam 102, contact 114 orientation columns 104 fixed pedestal of beam 102 (that is, towards) are arranged on the weld pad 112.This relative positioning can help avoid chip and accumulate on the alignment mark, and this is that chip will be pushed to the stiff end (pedestal) of beam 102 because when being pressed against tip 114 on the mating terminals.Similarly, since the beam free end when being subjected to pushing more more the part near its fixed pedestal can more be tending towards cooperating further away from each other substrate, so, alignment mark positioned towards the beam free end can help avoid alignment mark and contact with cooperating the accident between the substrate.Can damage mark or cause it to be buried by chip with cooperating contacting of substrate, therefore, people do not expect to take place this contact usually.Yet, in some applications, may not have sufficient free space to allow towards free end (far-end) location of beam 102 alignment mark.In other cases, may make beam have not isostructure for other reasons so that one more comparatively unfavorable near the position of distal tip.At these application, fixed pedestal that can more close beam 102 is located alignment mark 116, shown in the plan view among Fig. 3 C.
Fig. 2 B is the enlarged side view of a cutting-edge structure 110, is presented at the contact tip 114 on the weld pad 112 and the exemplary relative size and the position of alignment mark 116.Contact tip 114 can be a truncated pyramid shape, has one " h1 " height and is a plane surface 118 at its top.In other embodiments of the invention, this contact tip can be the pyramid of not being with truncate top, or can be the prism-shaped with or without truncate top, or other is such as the suitable shape of a semisphere.Usually adopt pyramid and prism-shaped, because its conical in shape can provide a W/S raised tip, and be easy to provide pyramid or prism-shaped pit also to form as electroplating mold with these silicon pits subsequently by implement the anisotropic silicon etching along its crystal face.Certainly, the present invention is not limited in the contact tip of given shape.
Similarly, alignment mark 116 also can be prism-shaped or pyramid because use identical silicon etching and coating technique with identical sacrificial substrate that contact tip 114 uses on to form mark 116 be comparatively favourable.For avoiding contacting with a component is unexpected, mark 116 is preferable to have one in fact less than the height " h2 " of " h1 ", for example, Jie's what " h1 " about 1/4 to 3/4 between.According to the geometric configuration of application requirements and spring contact, the difference degree between " h1 " and " h2 " can be different.For example, shown in Fig. 3 C, one be arranged at contact tip " inboard " (that is, the stiff end of more close beam 102) alignment mark must be shorter relatively, with prevent to contact with the accident of component and talus accumulation on alignment mark.Comparatively speaking, shown in Fig. 2 A and 2B, an alignment mark that is positioned at contact tip " outside " (that is, for contact tip towards the beam free end) can be a little slightly long than contact tip.Certainly, regardless of the relative length of contact tip and alignment mark, usually all with alignment mark is positioned to make its not the contact matching parts be good, this often means that when making alignment mark to make it be shorter than contact tip in fact.
Therefore, shown in Fig. 2 B, the width of alignment mark " w " generally can be less than the width of contact tip, particularly when adopting pyramid or prism-shaped pattern.Simultaneously, the width of this mark must be enough big, can see on recording geometry that at least this recording geometry is used for the contactor that has mark on it is aimed at.Therefore, the pattern that at least one size (for example, its length) of increase alignment mark is easier to differentiate when the height that makes mark keeps less than the corresponding contacts tip may be comparatively favourable.
Prism-shaped alignment mark 116 shown in Fig. 3 A plan view is for example understood this method.Mark 116 can be compared with the pyramid alignment mark 120 shown in Fig. 3 B plan view: mark 120 and 116 has identical width " w " and identical height " h1 " but mark 120 is square in plan view, and mark 116 in plan view for rectangle and extend to the width of weld pad 112 in fact.In a recording geometry (its minimum distinguishable appearance and size approximates the area of plane of mark 120 greatly), this mark will be revealed as a single pixel or a small cluster of pixels.Therefore, may be difficult to it is distinguished in the surrounding environment that may comprise impurity (chip that for example, gathers or oxide).These impurity can be revealed as single pixel or irregular pixel clusters, produce a band speckled background, are unfavorable for alignment mark from wherein distinguishing.By comparing, mark 116 will be revealed as a pixel line, and this pixel line more can form visual contrast with surrounding environment.Shown in Fig. 3 C, in one embodiment of this invention, the length " 1 of alignment mark 116
1" less than the width " 1 of weld pad 112
2", thereby all have an open region at each end of alignment mark 116.A bit (for example an end points or the intermediate point) that can select this line is as a reference point.
In other embodiments of the invention, tie up to a plate shaped alignment feature is provided on the contact structures, a weld pad for example, it can be separated with the weld pad of contact tip according to circumstances.Fig. 4 A to 4B has shown the plate shaped alignment pad 126 of an exemplary circular.Weld pad 126 comes down to the alignment mark of a kind of form of being produced in the different step of a microelectronics contact formation method.Fig. 4 A is a side view, is presented at a mark 126 and an adjacent cutting-edge structure 110 on the spring contact beam tip portion.Fig. 4 B shows the plan view of same structure.These form at aiming at purpose and the plate shaped weld pad of locating is particularly useful for some application, for example, when the height in hand of an alignment mark very has in limited time, when contact tip 114 is when being formed by a certain method except that etching/method of coating, maybe when needing a relatively large align structures.Preferably, form alignment pad 126 and it is attached to beam 102, reach accurate aligning thus with respect to contact tip 114 with the method step identical with contact tip weld pad 112.Alignment pad 126 is preferable to be separated and separates with weld pad 112, in order to avoid be subjected to from the pollution of most advanced and sophisticated 114 chip and obtain bigger visuality.Be to obtain bigger visuality, alignment pad 126 is preferable also to have a special shape.One circle is good especially, because be easy to determine the center of circle as a reference point, bigger circle is easy to see simultaneously.Yet, also can use arbitrary other suitable shape.
Fig. 5 A to 5E illustrates the application of said structure in an exemplary contactor.Contactor 130 comprises a roughly plate shaped substrate 132 of being made by stupalith usually.This paper employed " contactor " comprises for carry out the electric dedicated devices that contacts with the semiconductor devices of wafer form during the electric test of semiconductor devices.In addition, " contactor " also can comprise arbitrary have a plurality of contact elements (such as but not limited to, the microelectronic spring contact) other device for contacting with the component of arbitrary type, wherein uses a recording geometry that the contact on the contactor is aimed at component.
Shown in Fig. 5 A, a typical contactor can comprise a plurality of spring contacts 136, and these spring contacts can and then be arranged in a plurality of groups 138.In one embodiment of this invention, the most of contacts in a plurality of spring contacts 136 do not have alignment mark.Have only a few selected spring contact (for example, 4 spring contacts 134) to have alignment mark.Those marked contact 134 are set, so that can accurately determine the position of whole contacts 136 according to the position of those marked contact.In many application, need 3 or 4 alignment marks to come contactor is aimed at least.Yet, for redundancy purpose, can provide extra marked contact 134, for example, can organize at each a marked contact (not shown) is provided in 138.Should be appreciated that contactor 130 and contact 136 are not to illustrate in proportion.In addition, for illustrate clear for the purpose of, the size of the contact 136 that is illustrated is larger than in semiconductor wafer applications the size that adopts usually for contactor 130.The detailed construction of contactor 130, contact 136 and the method for making these parts can be known in the industry structure and method or can such as in the list of references of incorporating this paper into announcement.
Fig. 5 B is presented at the zoomed-in view of one group of spring contact 138 on the contactor 130.Obviously, shown in the figure the typical alternative arrangement of spring contact 136, as the layout of the single beam 102 and the contact tip 114 of each spring contact 142.Post or cartridge by diffusion of volatile treating agent all are hidden in the back of the beam 102 of each spring contact.Also can obviously see the weld pad 140 of a special shape.One big weld pad (for example weld pad 140) can be big alignment mark additional space is provided, or itself promptly can be used as a pair of quasi-mark.The special shape of weld pad 140 helps being provided with tape label contactor 134.Because weld pad 140 has large-size and special shape, so can use a recording geometry to position with low enlargement ratio.Then, can improve the enlargement ratio of recording geometry, so that alignment mark is positioned on the contactor 134.
Fig. 5 C shows marked contact 134 and adjacent unmarked contacts 142.In this zoomed-in view, the parts of unmarked contacts 142 and marked contact 134 are more apparent.And the weld pad 112 of each contact 142, contact tip 114 and beam 102 are all apparent.The tip 114 of contact 134, weld pad 140, beam 102 and alignment mark 116 are also apparent.Also indicate the free end 146 and the stiff end 148 of contact 142,134 among the figure respectively.In one embodiment of this invention, unmarked contacts 142 and marked contact 134 all are provided with the beam 102 and the contact tip 114 of same type.Yet in some alternate embodiment, marked contact 134 employed beam constructions and/or contact tip structure can be different from unmarked contacts 142.For example, in one embodiment of this invention, structure 134 only is used as the supporting of an alignment mark, and does not have contact tip.
Fig. 5 D is presented at the zoomed-in view of the weld pad 140 at beam 102 free ends 146 places.Described with reference to Fig. 2 A to 2B as mentioned, triangular prism alignment mark 116 is arranged on the weld pad 140.Another is chosen as, and the circular portion of weld pad 140 can be used as alignment feature, and can omit mark 116.Perhaps, more than one alignment mark can be arranged on the same weld pad 140, for example, 2 parallel alignment marks that are similar to mark 116 can be set.Shown in Fig. 5 E, one comprises that 2 cruciform marks 144 that intersect triangular prisms especially can help to indicate a reference point that is positioned at this right-angled intersection point place.As mentioned below, above-mentioned each mark all can adopt little shadow mask/etch process manufacturing.
Fig. 6 be one be used to make the example steps of method of alignment mark of the present invention during one coated with one of the sacrificial substrate of photoresist layer 152 stereographic map.Substrate 150 is generally a silicon substrate and has a plane, and this plane extends to a zone, and this zone is preferable at least with to propose the contactor surface that is equipped with spring contact the same big.If baseplate material enough evenly and can provide one can be subjected to even and expect etched plane then also can use other baseplate material below a patterning photoresist layer.Photoresist layer 152 can be made by known in the industry arbitrary suitable photoresist.With layer 152 patterning, provide some square aperture 154 (only showing 4 in many openings) with the position that forms contact tip in expectation, and provide some rectangular apertures 156 (only showing 1 in many openings) in the position of expectation formation alignment mark.Should be appreciated that when the etching bottom substrate, a square opening will produce a pyramid pit, and a rectangular opening will produce the prism-shaped pit.Can provide other shape by appropriate combination substrate and opening shape, for example, cruciform, taper, frustoconical or the like.
Fig. 7 A is presented at the sectional view that substrate 152 is carried out seeing through after the etching some exemplary square aperture 154 and rectangular aperture 156.In one embodiment of this invention, etching stops at the complete etching of a pyramid pit moment before.At this moment, although prism-shaped pit 160 is subjected to over etching, it is more shallow than pit 158.That is, the degree of depth of pit 158 is mainly controlled by the time that is exposed to etching solution, and the degree of depth of pit 160 is mainly controlled by the relative size of opening 156.After pit 160 was etched to the edge of opening 156, further the process of carrying out of etching (" over etching ") should be slower than the etching of adjacent pit 158.Thus, can produce adjacent pit with difference and controllable depth.
Fig. 7 B shows below civilian described same substrate part after further handling.After reaching the pit depth of expectation, stop etching and remove photoresist layer 152 with known method in the industry.Usually, on substrate surface, apply the inculating crystal layer and/or the releasing layer 164 of a conduction, be beneficial to follow-up plating and cutting-edge structure disengaging from substrate 150.The suitable material of inculating crystal layer and/or releasing layer 164 is in common knowledge in the industry, or such as in the list of references of incorporating this paper into elaboration.Apply one second photoresist layer and will it patterning plate a cutting-edge structure and a support pad that is used for alignment mark with known way in the industry to manifest a pad-shaped opening 166 power supplies.Fig. 7 B shows that one is arranged on the single opening of pit 158 and 156 on both.Yet,, can provide 2 independent openings (being provided with on each pit 156,158) to form independent weld pad if need.In addition, form among the embodiment of raised alignment mark (for example, alignment mark is a pad shapes) need not, can omit pit 156.
Then, electroplate one or more metal level 168,170 fillings in pad-shaped opening 166, by (for example) to provide just like the filling opening shown in Fig. 7 C.The composition of layer 168,170 is in common knowledge in the industry.Can use the layer of any amount and composition, and the present invention is not limited.Then, shown in Fig. 7 D and according to mentioned above, by (for example) chemical-mechanical polishing method the exposed surface 172 of top layer 170 is flattened, and second photoresist layer 162 is removed to manifest a cutting-edge structure 110, it comprises a weld pad 112, a contact tip 114 and an alignment mark 116.Should be appreciated that, on substrate 150, can there be a plurality of similar cutting-edge structures, for example, some structures have the alignment mark that is similar to mark 116, other structures only have one of contact tip or alignment mark, and may the other structure just not having contact tip or alignment mark at all, the exposed surface of these cutting-edge structures is positioned at same level in fact.At this moment, these cutting-edge structures can be for being engaged to the array of those spring contacts shown in Fig. 5 A to 5C.Should be appreciated that cutting-edge structure 110 can be multiple shape, and be not limited in the Pyramid of being discussed in the paragraph above.
Fig. 7 E is presented at the sectional view that beam 102 is engaged to exemplary contact structures 134 during the step of cutting-edge structure 110.As known in the industry a grafting material 178 such as solder(ing) paste accurately is distributed on the surface 172.Substrate 150 is seated in the clamping fixture that suits, and be parallel to substrate 150 reduce substrates 106 (its surface is provided with a plurality of contact structures) and aimed at so that each contact structures (for example, contact structures 134) aim at (for example, structure 110) with a corresponding cutting-edge structure.With these substrates move together up to grafting material touch cutting-edge structure 110 and beam 102 both.Then, by (for example) heating grafting material is activated, afterwards, grafting material is pulled to a relative position uniformly by means of surface tension together with cutting-edge structure and beam, and grafting material will harden therein (for example, by cooling).The grafting material amount that character of surface, unit area applied, substrate 106 of grafting material intended in careful control and 150 aligning and condition of cure (for example, temperature) can produce uniform bond thickness on many cutting-edge structures in whole contactor substrate usually.The known precision in the Z-orientation (perpendicular to the direction of substrate 106) of bond thickness meeting influencing contactor tip and alignment mark.X-and Y-orientation (in an orientation that is parallel in the plane of substrate 106) can be determined by sacrificial substrate and pattern shade step.Thus, can determine the position of adjacent cutting-edge structure and alignment mark according to precision required on the whole base plate three-dimensional.Measuring position that can be by selected contact tip in the whole base plate relatively and desired locations are determined the bearing accuracy with respect to main alignment mark.If deviation has exceeded the tolerance (for example, semiconductor devices terminal pitch 1/2) of regulation, tackle then that substrate repairs or it is discarded.
Alignment mark need not to be seated in and to carry on the identical in structure contact structures of contact tip.The alignment function of mark also can realize by it is arranged on the constructed elevated platform, these elevated platform systems make up be used to provide one with the coplanar installation surface of contact tip installation surface essence.These elevated platform can have elasticity, or have rigidity (that is, nonelastic in fact) in fact after supporting.Fig. 8 A is depicted as the plan view that an essence of adjoining spring contact 184 on the substrate 106 is the elevated platform of rigidity.Structure is applicable to the application scenario of using contact " little tip " 182 on its cutting-edge structure 194 and using corresponding small-sized contact structures 184 shown in Fig. 8 A.To such an extent as to structure 184 may be too little can not support alignment marks 188,192.Therefore, can provide an elevated platform 180 that has than crossbeam 186 to supply to install alignment mark.Thus, alignment mark 188,192 can be formed on little most advanced and sophisticated 182 the same sacrificial substrate, and is transferred to structure 180,184 on the substrate 106 with these little tips.Can reach aiming between these alignment marks and the little tip in the same way as described above.
Fig. 8 B is depicted as a side sectional view of platform 180, comprises the several portions of the contact structures 184 (particularly the fingertip end structure 194) that can see later from this platform.Pad-type alignment mark 192 has the smooth surface of a nothing projection and sunk structure.Recessed alignment marks 188 is arranged in the upper surface of weld pad 190.Therefore beam 186 is supported by 4 posts 104 along its length direction, and is rigidity with respect to the overarm essence of spring contact 184.
When alignment mark when being big than contact tip, if possible, preferable use image scale remembers that 192 such pad-type mark or image scales remember 188 such umbilicate type marks.The male-type alignment mark is not good to these application, and this is because contact tip only can provide very little gap.In addition, even when alignment mark is non-male-type (for example, pad-type mark 192 and/or mark 188 below weld pad 190 surfaces), also can not provide sufficient down suction as little contact tip of most advanced and sophisticated 182.Therefore, shown in Fig. 8 B, people further expectation are recessed to pad-type mark and alignment mark weld pad and are lower than below little most advanced and sophisticated pedestal.Yet, simultaneously, keep accurate purpose of aiming at, preferable making on the same sacrificial substrate that alignment mark and/or its weld pad form sub little tip for being implemented between mark and the tip.For on same sacrificial substrate, reaching desired structure, can use the manufacturing step that is different from said sequence.
Fig. 9 A to 9F is presented at a substrate during the step that is used to adjoin little most advanced and sophisticated example order of making big alignment mark and executes the cross section view of material layer thereon.As previously mentioned, sacrificial substrate 200 can be made by silicon or other etchable material.Deposit one first photoresist layer 202 and implement patterning, to expose most of substrate 200 of intending forming any recessed alignment marks position except that directly covering.Then, etching substrates 200 is to provide protrusion under all the other zones of photoresist layer 202.The shape of protruding depends on the shape in the etching characteristic of substrate 200, used engraving method and photoresist layer zone 202.For example, when etching,, then will provide a butt prism-shaped to protrude if the photoresist layer zone on the crystalline silicon substrate is a rectangle.Fig. 9 A has shown the exemplary section of 2 these type of protrusions.
Then, peel off first photoresist layer 206 and apply and patterning one second photoresist layer 206 to manifest the taper off to a point pad-shaped opening of structure of plan as opening 208.This substrate of etching caves in so that the 209 such pad-shaped of depression shown in a plurality of image pattern 9B to be provided once more.
Then, peel off this second photoresist layer, and apply and patterning 1 the 3rd photoresist layer 210 provides a plurality of little opening that forms contact tip as the plan of opening 212.Etching substrates 200 is to form the such a plurality of pyramid pits of pit shown in the image pattern 9C 214 once more.
Then, peel off the 3rd photoresist layer and impose inculating crystal layer and/or the releasing layer (not shown).Described in conjunction with Fig. 7 B as mentioned, be applied to one the 4th photoresist layer (not shown) on the substrate 200 and implement patterning with protrude 204 and pit 214 on a plurality of pad-shaped openings are provided.Then, described in conjunction with Fig. 7 C as mentioned, the one layer or more metal is coated on this substrate with these openings of essence filling, and the dispensing area that is exposed is flattened.Remove the 4th photoresist layer, to manifest in the weld pad 190 and a plurality of cutting-edge structures 194 and recessed alignment marks 188 the same shown in Fig. 9 D.Described in conjunction with Fig. 7 E as mentioned, cutting-edge structure and weld pad have the smooth installation surface 216 that is suitable for being engaged to a plurality of contact structures.Thus, can produce those structures shown in Fig. 8 A to 8B.
Also should be appreciated that, after producing cutting-edge structure, can alignment mark be added on the cutting-edge structure by (for example) further selective etch or laser labelling.Although usually preferablely form these alignment marks with little shadow step identical with the used step of contact tip, this is not always feasible.For example, in some cases, people expectation is added into one with alignment mark and makes on it and have on the contactor of these marks.Following example is with a kind of method that is used for adding at a subsequent step alignment mark of exemplary explaination.
With reference to Figure 10 A, the weld pad 300 of cutting-edge structure 312 comprises that one can be by the contact tip 314 of one of (for example) said method manufacturing.Structure 312 can be mounted on the beam 302 of a spring structure according to circumstances.Marked region 304 is provided, wherein proposes and put alignment mark.In Figure 10 B, can make it to depart from a mark position 320 1 preset distances then by a low power beam 326 aiming contact tips 314 are aimed at a laser marking system 324.Afterwards, start laser instrument 324 and produce an accurate mark 316 (shown in Figure 10 C) to launch a high power beam 328 with sufficient power.With mark position 316 (target of laser beam) biasing one predetermined spatial distance, for example, the amount of bias in the x and y direction shown in.This biasing can additionally comprise z-direction biasing (not shown).Shown in Figure 10 C, mark 316 is defined at the center of laser beam target.The mark (for example mark 316) of one follow-up formation can be implemented the aligning of a contactor as a reference point.As further example, can use a gas phase organic-metallic precursor and the ion beam method of writing direct to finish the direct deposition of mark 316.Aiming contact tip 314 also uses the metal of ion beam-assisted to deposit the pattern that produces mark 316 subsequently, and these patterns depart from this contact tip one definite distance.
In certain embodiments of the present invention, can measure and be recorded in a data file or the database the relative position of contact tip.These data can obtain from method for designing, or utilize optics or other measuring method directly to measure after assembling is finished and obtain.These data can be particularly useful to the contactor with a plurality of contacts and alignment mark, and wherein the contact tip of contact and the amount of bias between the alignment mark can be variant slightly for each contact in the whole contactor.When alignment mark is not when forming with identical with the used step of contact tip little shadow step, for example when alignment mark was formed by laser, the possibility that produces these differences was bigger.For obtaining this data, point of preferable selection (for example tip of a contact tip on the contactor) is as a reference point.Sometimes can suppose that all contact tips all are fixed relationship with reference point essence, but for accurate location, the position at preferable also metering contact tip.Then, can measure the position (that is, amount of bias) of each alignment mark with respect to one or more adjacent contact tips.No matter whether offset or dish exists any difference, all can determine the coordinate of alignment mark with respect to fixed datum according to measured amount of bias.Then, the test macro that the input of these coordinate datas is used to aim at and be provided with contact tip to be to carry out test jobs, can obtain the best between tried tentaculum and device or wafer thus and aim at.
Hereinafter exemplary is set forth a kind of method of using alignment mark to aim at and contact the corresponding array of microelectronics contact element.These arrays comprise one first array and second array, and its target is to reach contact between the corresponding contact element of this first array and this second array.The contact element of this first array comprises that a plurality of and this first array essence is contact tip and a plurality of alignment feature of fixed relationship.As mentioned above, in first array in these contact elements more selected contact elements each further comprise the isolated alignment feature of one and one contact tip.This first array can comprise the contact element such as a probe, and this second array can comprise the contact element such as a wafer, but the present invention is not limited only to this.
This method comprises an initial step,, determines the coordinate of a plurality of alignment feature with respect to some contact tips of selecting in the contact tip in first array that is.This can realize by direct measurement, or reach according to the known relation between the element that uses pattern-mask/etch process to form.Can second array be remained on one by (for example) is mounted in the wafer chuck of a test macro framework mutual array is maintained in the known location.First array also is installed in the corresponding movable detection head of this test macro.In the time of in these arrays are installed in a suitable test macro, can change to determine the position of this first array to these a plurality of alignment feature with respect to the measuring position of this second array by using these coordinates with respect to this second array.That is the position by measuring these alignment feature and apply the contact tip position that a suitable correction is determined this first array, according to coordinate data.Then, can first array be located with respect to second array, till reaching contact between the corresponding contact element of first array and second array according to determined first array position.During position fixing process, can optionally frequently repeat to determine the position of these contact tips.Use this method, contact tip accurately can be positioned to corresponding weld pad or other contact element of contact second array, and need not during test process, to determine or measure the position of these contact tips self.
, it will be understood by one of ordinary skill in the art that and in system, realized some advantage the elaboration of the preferred embodiment of benchmark alignment mark on the microelectronics contact by above.Also should be appreciated that, can carry out various modifications and changes to above-mentioned and alternate embodiment, this does not depart from the scope of the present invention and spirit.For example, above demonstrated one and had on the weld pad of contact tip or adjoin the benchmark alignment mark of this weld pad, but should be appreciated that the invention described above notion is equally applicable to be attached to any reference mark on (or being formed at) contact array with the manufacturing step identical with the most advanced and sophisticated used step of array contacts.In addition, notion of the present invention also is applicable to the alignment mark that is arranged on other type microelectronics contact that is different from this paper shown type, and wherein alignment mark is put the contact tip aligning together or put contact tip together and is the setting of the relation of mensuration.For example, alignment mark can be arranged on the inelastic substantially membrane probe cards or on the contact element, for example is arranged on the bending resistance type probe.Similarly, the method for using the alignment mark on the contact element at least one array that the contact element arrays is aimed at is not limited only to use the contactor or the device of particular type.On the contrary, this method can be used with any contact element array, can be provided with on these contact elements to aim at the contact tip of these contact elements or point or be with the contact tip of these contact elements or point to measure the alignment mark that concerns.The present invention will further be defined by following claim.
Claims (41)
1, a kind of spring contact structures that are used for an electronic installation, described spring contact structures comprise:
One cartridge by diffusion of volatile treating agent, described by this spring contact structures are affixed to described electronic installation;
One spring main body, it is attached to described cartridge by diffusion of volatile treating agent and leaves at interval with described electronic installation;
One contact tip, it is arranged on the described spring main body;
One alignment mark, it is arranged on the described spring main body from described contact tip one fixed range place.
2, spring contact structures according to claim 1, wherein said spring main body comprise that a weld pad and described contact tip project upwards the surface of described weld pad, and described alignment mark is put and is depressed in below the described weld pad surface.
3, spring contact structures according to claim 1, wherein said spring main body comprise that a weld pad and contact tip project upwards the surface of described weld pad, and described alignment mark protrudes from more than the described weld pad surface.
4, spring contact structures according to claim 1, wherein said alignment mark have one and are selected from pyramid, long pyramid, cruciform, circle, square, triangle and a parallel linear shape.
5, spring contact structures according to claim 1, wherein said spring main body comprises that the distal tip of a weld pad and described contact tip projects upwards the surface of described weld pad, and described alignment mark is arranged on the described weld pad, and described weld pad is fully below the described distal tip of described contact tip.
6, a kind ofly be used to contact a contactor that is the semiconductor devices of wafer form, described contactor comprises:
A plurality of contacts, it is arranged on the substrate so that a plurality of contact tips to be provided, and the distal tip of these contact tips is positioned on the plane parallel with described substrate;
A plurality of alignment marks, it is arranged on the following described contactor in plane that described contact tip is set therein.
7, contactor according to claim 6, wherein the selected contact of some of described at least a plurality of contacts comprises a cutting-edge structure, and described cutting-edge structure comprises that a weld pad, is attached to the contact tip of described weld pad and is attached at least one alignment mark in described a plurality of alignment marks of described weld pad.
8, contactor according to claim 7, described at least one alignment mark in wherein said a plurality of alignment marks can be depressed in below the surface of described weld pad.
9, contactor according to claim 7, described at least one alignment mark in wherein said a plurality of alignment marks can be raised in more than the surface of described weld pad.
10, contactor according to claim 6, wherein the selected contact of some of described at least a plurality of contacts further comprises a cutting-edge structure, described cutting-edge structure comprises one first weld pad, and a contact tip that is attached to described first weld pad, and one second weld pad that is adjacent to described first weld pad, and described second weld pad comprises at least one alignment mark in described a plurality of alignment mark.
11, contactor according to claim 6, it further comprises a plurality of elevated platform that are arranged on the described substrate surface, each described a plurality of elevated platform comprises that at least one described a plurality of attaching is in its alignment mark.
12, contactor according to claim 11, in wherein said a plurality of elevated platform each all further comprises its attached weld pad, and at least one alignment mark in wherein said a plurality of alignment mark is depressed in below the surface of described weld pad.
13, a kind of method that is used to form the cutting-edge structure of using a confession microelectronics contact, described cutting-edge structure comprises an alignment mark and a contact tip, described method comprises the steps:
Described contact tip and described alignment mark are formed on the sacrificial substrate;
Described contact tip and described alignment mark are transferred to parts of a microelectronics contact;
After described transfer step, remove described sacrificial substrate.
14, method according to claim 13, it further comprises by forming depression via a described sacrificial substrate of patterning photoresist layer etching and a material is deposited in this substrate and forms described contact tip and described alignment mark in the described depression.
15, method according to claim 14, it comprises that further wherein said opening is positioned on the described depression by a material being deposited on the weld pad that is attached to each described contact tip and described alignment mark on the described sacrificial substrate in the opening in the sacrificial patterned.
16, method according to claim 13, wherein said formation step further comprise by form a depression via the described sacrificial substrate of a patterning photoresist layer etching and form described contact tip.
17, a kind of method that is used to form the cutting-edge structure of using a confession microelectronics contact, described cutting-edge structure comprises an alignment mark and a contact tip, described method comprises the steps:
Described contact tip and described alignment mark are formed on the sacrificial substrate, and wherein said contact tip forms described contact tip by form a depression via the described sacrificial substrate of a patterning photoresist layer etching;
Deposit a sacrifice layer on described sacrificial substrate;
The described sacrifice layer of patterning and in wherein defining first opening that is positioned on the described depression;
Deposit a material in described first opening to form a weld pad that is attached to described contact tip;
Shift described weld pad, described contact tip, and parts of described alignment mark to microelectronics contact; And
After described transfer step, remove described sacrificial substrate.
18, method according to claim 17, it comprises that further the described sacrifice layer of patterning defines at least one second opening, and a material is deposited in described second opening forming the contiguous and isolated described alignment mark with described weld pad, described alignment mark has a thickness that equals described weld pad thickness.
19, method according to claim 18, it further comprises by define described at least one second opening on one on the described sacrificial substrate protruded makes in the surface of described alignment mark at described alignment mark and has at least one depression.
20, method according to claim 19, it further is included in before the step of the described contact tip of described formation by being deposited on a photoresist layer on the described sacrificial substrate, removing the described sacrificial substrate of described photoresist layer, etching except a position of described protrusion to be formed and form described protrusion and remove described photoresist layer and form described protrusion.
21, a kind ofly be used to form one and have the method for the contactor of a plurality of microelectronics contact and a plurality of alignment marks, described method comprises the steps:
The one contactor substrate that has a plurality of microelectronics contact on it is provided;
On a sacrificial substrate, form a plurality of contact tips and a plurality of alignment mark;
Described a plurality of contact tips and described a plurality of alignment mark are transferred to described a plurality of microelectronics contact; And
After described transfer step, remove described sacrificial substrate.
22, method according to claim 21, it further comprises by coming the described sacrificial substrate of etching via a patterning photoresist layer in wherein forming some depressions and a material being deposited on and forms described a plurality of contact tip and described a plurality of alignment mark in the described depression.
23, method according to claim 22, it further comprises by a material is deposited on the described sacrificial substrate and forms a plurality of weld pads in a plurality of openings in the sacrificial patterned, and it is most advanced and sophisticated and be attached to each alignment mark in described a plurality of alignment mark that one of described a plurality of weld pads are attached in described a plurality of contact tip each; Each opening in wherein said a plurality of opening all be positioned in the described depression at least one the depression on.
24, method according to claim 21, wherein said formation step further comprise by forming a plurality of depressions via the described sacrificial substrate of a patterning photoresist layer etching and form described a plurality of contact tip.
25, a kind ofly be used to form one and have the method for the contactor of a plurality of microelectronics contact and a plurality of alignment marks, described method comprises the steps:
The one contactor substrate that has a plurality of microelectronics contact on it is provided;
On a sacrificial substrate, form a plurality of contact tips and a plurality of alignment mark, wherein form a plurality of depressions and form described a plurality of contact tip via the described sacrificial substrate of a patterning photoresist layer etching;
Deposit a sacrifice layer on described sacrificial substrate;
The described sacrifice layer of patterning and in wherein defining one first many openings, wherein each opening all is positioned on one of described a plurality of depressions;
Deposit a material in described more than first opening to form a plurality of weld pads, wherein each weld pad one of all respectively is attached in described a plurality of contact tip;
Shift described a plurality of weld pad, a plurality of contact tip, reach a plurality of alignment marks to described a plurality of microelectronics contact; And
After described transfer step, remove described sacrificial substrate.
26, method according to claim 25, it comprises that further the described sacrifice layer of patterning defines one second many openings, and a material is deposited in described more than second opening forming contiguous and isolated described a plurality of alignment marks with described a plurality of weld pads, described a plurality of alignment marks have a thickness that equals the thickness of described a plurality of weld pads.
27, method according to claim 26, it further comprises by defining each opening of some openings of selecting at least in described more than second opening at least one protrusion in a plurality of protrusions on described sacrificial substrate, and in a surface of the alignment mark through selecting of described a plurality of alignment marks, make some selected at least in described a plurality of alignment mark marks have at least one depression.
28, method according to claim 27, its step that further is included in the described a plurality of contact tips of described formation forms described a plurality of protrusion and removes described photoresist layer to form described a plurality of protrusion by some described sacrificial substrate of described photoresist layer, etching of protruding present positions that are deposited on a photoresist layer on the described sacrificial substrate, remove in described a plurality of protrusions to be formed before.
29, a kind of method that is used to form microelectronics contact structures, described contact structures comprise an alignment mark and a contact tip, said method comprising the steps of:
Form spring contact structures, described spring contact structures comprise a cartridge by diffusion of volatile treating agent, and described by this spring contact structures are affixed to an electronic installation; One spring main body, it is attached to described cartridge by diffusion of volatile treating agent; And a contact tip, described contact tip is attached to described spring main body; And
Form an alignment mark on described spring main body, the offset or dish that the described contact tip one of wherein said alignment mark distance defines.
30, method according to claim 29, the step of wherein said formation one alignment mark on described spring main body further comprise uses a laser to form described alignment mark.
31, method according to claim 29, the step of wherein said formation one alignment mark on described spring main body comprise further that the metal that uses an ion beam-assisted deposits and form described alignment mark.
32, method according to claim 29, it further comprises the coordinate of the described offset or dish that defines of record with respect to described contact tip.
33, method according to claim 29, the step of wherein said formation one spring contact structures further comprises: form described contact tip on a sacrificial substrate, described contact tip is transferred to described spring main body, and after described transfer step, removes described sacrificial substrate.
34, method according to claim 29, the step of wherein said formation one alignment mark on described spring main body further comprises: form described alignment mark on a sacrificial substrate, described alignment mark is transferred to described spring main body, and after described transfer step, removes described sacrificial substrate.
35, method according to claim 34, the step of wherein said formation one spring contact structures further comprises: form described contact tip on described sacrificial substrate, described contact tip is transferred to described spring main body, and after described transfer step, removes described sacrificial substrate.
36, a kind of method that is used to aim at and contact the spring contact structures that comprise one first array and comprises the microelectronics contact element of one second array, reach between the microelectronics contact element with some the corresponding spring contact structures in the described spring contact structures of described first array and described second array and contact, the described spring contact structures of wherein said first array comprise a plurality of contact tips and a plurality of alignment feature, and in the described spring contact structures of described first array some selected spring contact structures each further comprise one be arranged on the spring main body of described spring contact structures and with the isolated alignment feature of a contact tip, described contact tip is arranged on the described spring main body of described spring contact structures, and described method comprises:
Determine that described a plurality of alignment feature is with respect to some selected most advanced and sophisticated a plurality of coordinates in described a plurality of contact tips of described first array;
Described second array is remained in the known location;
Determine described first array locating by using the described a plurality of alignment feature of these coordinate conversion with respect to the measuring position of described second array with respect to described second array; And
Use describedly to locate to locate described first array, reach between the microelectronics contact element with some the corresponding spring contact structures in the described spring contact structures of described first array and described second array and contact with respect to described second array.
37, method according to claim 36, it further comprises the data file that produces a described coordinate and described data file is offered robot system confession aims at described first array and described second array.
38, method according to claim 36, it further comprises the described measuring position of using a machine vision system to measure described a plurality of alignment feature.
39, method according to claim 36, it further is included in and repeats the described step that locates determined during the described step of locating described first array with respect to described second array continuously.
40, method according to claim 36, wherein determine that described the step of the coordinate of described a plurality of alignment feature reaches during the described step of determining to locate, described a plurality of contact tips of described first array and described first array have a fixing relation.
41, a kind of method that is used to aim at the spring contact structures array on the contactor with the corresponding contact element that is positioned on the device, described method comprises:
Form one on the one spring main body of at least one the spring contact structures in the described spring contact structures on described contactor and aim at pattern, wherein said alignment feature is spaced apart with a contact tip that is positioned on the described spring main body;
Determine the position of described alignment feature with respect to described contact tip; And
Use the described position of described alignment feature to aim at described contactor and described device.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2002/022477 WO2004015432A1 (en) | 2002-07-15 | 2002-07-15 | Fiducial alignment marks on microelectronic spring contacts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1668928A CN1668928A (en) | 2005-09-14 |
| CN100447573C true CN100447573C (en) | 2008-12-31 |
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ID=31713782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028295919A Expired - Fee Related CN100447573C (en) | 2002-07-15 | 2002-07-15 | Fiducial alignment mark on microelectronic spring contact |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1523684A1 (en) |
| JP (1) | JP2005533263A (en) |
| KR (1) | KR100880088B1 (en) |
| CN (1) | CN100447573C (en) |
| AU (1) | AU2002368160A1 (en) |
| WO (1) | WO2004015432A1 (en) |
Families Citing this family (11)
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| US7602200B2 (en) | 2006-03-15 | 2009-10-13 | Kabushiki Kaisha Nihon Micronics | Probe for electrical test comprising a positioning mark and probe assembly |
| CN100399532C (en) * | 2006-07-24 | 2008-07-02 | 友达光电股份有限公司 | Para-position precision detecting device |
| US7836587B2 (en) * | 2006-09-21 | 2010-11-23 | Formfactor, Inc. | Method of repairing a contactor apparatus |
| JP5113392B2 (en) | 2007-01-22 | 2013-01-09 | 株式会社日本マイクロニクス | Probe and electrical connection device using the same |
| KR101324284B1 (en) | 2007-05-25 | 2013-11-01 | 주식회사 코리아 인스트루먼트 | Electrical connecting assembly for probe card, probe card having the electrical connecting assembly, manufacturing method of electrical connecting assembly for probe card and manufacturing method of having the electrical connecting assembly |
| JP5416986B2 (en) | 2009-02-19 | 2014-02-12 | 株式会社日本マイクロニクス | Electrical connection device |
| JP5412685B2 (en) * | 2009-07-24 | 2014-02-12 | 日本電子材料株式会社 | Probe and probe manufacturing method |
| KR101638228B1 (en) * | 2014-05-15 | 2016-07-11 | 주식회사 코리아 인스트루먼트 | Fabrication method of probe pin capable of being used for fine pitch |
| US9804196B2 (en) * | 2016-01-15 | 2017-10-31 | Cascade Microtech, Inc. | Probes with fiducial marks, probe systems including the same, and associated methods |
| EP3443586B1 (en) | 2016-04-15 | 2021-01-20 | Teledyne Digital Imaging, Inc. | Alignment of multiple image dice in package |
| US11171434B2 (en) * | 2017-09-08 | 2021-11-09 | Enplas Corporation | Electric connection socket |
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| JPS61154044A (en) * | 1984-12-26 | 1986-07-12 | Toyo Electric Mfg Co Ltd | Probe card of prober |
| JPH0265150A (en) * | 1988-08-30 | 1990-03-05 | Fujitsu Ltd | Automatic alignment method for probe card |
| JPH10160793A (en) * | 1996-12-02 | 1998-06-19 | Hitachi Cable Ltd | Probe substrate for bare-chip inspection and its manufacture as well as bare-chip inspection system |
| US5864946A (en) * | 1993-11-16 | 1999-02-02 | Form Factor, Inc. | Method of making contact tip structures |
| CN1045693C (en) * | 1993-11-16 | 1999-10-13 | 佛姆法克特股份有限公司 | Contact structure for interconnections, interposer, semiconductor assembly and method |
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| JPH06209033A (en) * | 1993-01-12 | 1994-07-26 | Hitachi Ltd | Probe with mark |
| JPH08327658A (en) * | 1995-03-31 | 1996-12-13 | Tokyo Electron Ltd | Inspection equipment for substrate |
| JP3562166B2 (en) * | 1996-09-25 | 2004-09-08 | 凸版印刷株式会社 | Method of forming printed circuit board having inspection electrode |
| JPH10213597A (en) * | 1997-01-31 | 1998-08-11 | Hitachi Ltd | Probe card |
| AU7491598A (en) * | 1997-05-15 | 1998-12-08 | Formfactor, Inc. | Lithographically defined microelectronic contact structures |
| US6566149B1 (en) * | 1998-09-16 | 2003-05-20 | Hitachi, Ltd. | Method for manufacturing substrate for inspecting semiconductor device |
| KR20080024236A (en) * | 1998-12-02 | 2008-03-17 | 폼팩터, 인크. | Lithographic contact elements |
| US7189077B1 (en) * | 1999-07-30 | 2007-03-13 | Formfactor, Inc. | Lithographic type microelectronic spring structures with improved contours |
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2002
- 2002-07-15 KR KR1020057000689A patent/KR100880088B1/en not_active IP Right Cessation
- 2002-07-15 CN CNB028295919A patent/CN100447573C/en not_active Expired - Fee Related
- 2002-07-15 JP JP2004527495A patent/JP2005533263A/en active Pending
- 2002-07-15 AU AU2002368160A patent/AU2002368160A1/en not_active Abandoned
- 2002-07-15 WO PCT/US2002/022477 patent/WO2004015432A1/en active Application Filing
- 2002-07-15 EP EP02752348A patent/EP1523684A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61154044A (en) * | 1984-12-26 | 1986-07-12 | Toyo Electric Mfg Co Ltd | Probe card of prober |
| JPH0265150A (en) * | 1988-08-30 | 1990-03-05 | Fujitsu Ltd | Automatic alignment method for probe card |
| US5864946A (en) * | 1993-11-16 | 1999-02-02 | Form Factor, Inc. | Method of making contact tip structures |
| CN1045693C (en) * | 1993-11-16 | 1999-10-13 | 佛姆法克特股份有限公司 | Contact structure for interconnections, interposer, semiconductor assembly and method |
| JPH10160793A (en) * | 1996-12-02 | 1998-06-19 | Hitachi Cable Ltd | Probe substrate for bare-chip inspection and its manufacture as well as bare-chip inspection system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1668928A (en) | 2005-09-14 |
| EP1523684A1 (en) | 2005-04-20 |
| WO2004015432A1 (en) | 2004-02-19 |
| AU2002368160A1 (en) | 2004-02-25 |
| JP2005533263A (en) | 2005-11-04 |
| KR100880088B1 (en) | 2009-01-23 |
| KR20050019870A (en) | 2005-03-03 |
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