CN100369117C - Oxide giant magnet resistor spin valve, preparing process and its use - Google Patents
Oxide giant magnet resistor spin valve, preparing process and its use Download PDFInfo
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- CN100369117C CN100369117C CNB021589615A CN02158961A CN100369117C CN 100369117 C CN100369117 C CN 100369117C CN B021589615 A CNB021589615 A CN B021589615A CN 02158961 A CN02158961 A CN 02158961A CN 100369117 C CN100369117 C CN 100369117C
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- spin valve
- electric resistance
- layer
- magnet electric
- oxide giant
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- 238000000034 method Methods 0.000 title claims abstract description 6
- 230000008569 process Effects 0.000 title claims description 3
- 230000005291 magnetic effect Effects 0.000 claims abstract description 34
- 238000002360 preparation method Methods 0.000 claims abstract description 8
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 4
- 238000004549 pulsed laser deposition Methods 0.000 claims abstract description 3
- 238000003980 solgel method Methods 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- 238000000926 separation method Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 21
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000003860 storage Methods 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 16
- 239000010408 film Substances 0.000 description 10
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- 229910052761 rare earth metal Inorganic materials 0.000 description 7
- -1 rare earth manganese oxide Chemical class 0.000 description 6
- 229910002182 La0.7Sr0.3MnO3 Inorganic materials 0.000 description 5
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 230000005316 antiferromagnetic exchange Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000005330 Barkhausen effect Effects 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910018663 Mn O Inorganic materials 0.000 description 1
- 229910003176 Mn-O Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- Thin Magnetic Films (AREA)
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Abstract
The present invention relates to an oxide giant magnetoresistance spin valve, and a preparation method and use thereof, which belongs to the technical field of material manufacture, sensing and magnetic storage. The spin valve of the present invention is at least composed of four thin films which are orderly an anti-ferromagnetic layer, a nailing layer, an isolating layer and a free layer; all materials of each layer are oxides; the preparation technology is sputtering technique or a sol-gel method or a pulsed laser deposition method. Under the action of a magnetic field, the oxide giant magnetoresistance spin valve has the advantages of obvious specific resistance reduction, low saturation field, high magnetic field sensitivity, etc., and is especially suitable for preparing sensors with high sensitivity, and magnetic memory devices.
Description
The invention belongs to made, sensing and magnetic storage technical field, relate to a kind of oxide giant magnet electric resistance Spin Valve, preparation method and its usage.
Background of invention
Giant magnetoresistance GMR (giant magnetoresistance) effect since finding in the Fe/Cr multilayer film in 1988, owing to its application, become the research focus in new function material fields such as magnetics, magneto-electronics, magnetic recording material at once in fields such as Magnetic reading head and magnetic random memories.
1993, people such as Helmolt were off the beaten track, at La
2/3Ba
1/3MnO
3Observe the GMR effect in the film, the GMR effect is generalized to the perovskite rare earth manganese oxide film in research Metal and Alloy multilayer film.Nineteen ninety-five, when people such as Xiong Guangcheng found perovskite type manganese oxide Nd-Sr-Mn-O at 77K, outfield 8T in U.S. Maryland university, the GMR value reached 106%.But this effect need low temperature (＜200K) and very big outfield (being generally 5-8T) just can show, limited the application of perovskite rare earth manganese oxide giant magnetic resistance material.Improving serviceability temperature and reducing the outfield is the key of present perovskite rare earth manganese oxide giant magnetic resistance material practicability.The Beijing Non-Ferrous Metal Research General Academy cooperates with the Beijing University of Technology, has prepared under the room temperature condition, and magnetoresistance effect reaches 8% individual layer Mn oxide film up to 62% perovskite rare earth manganese oxide body material and temperature 320K, outfield 0.8T, GMR value.But the outfield also needs further reduction.
As far back as 1991, B.Dieny utilizes the antiferromagnetic exchange coupling, suppressed the Barkhausen noise effectively, and derive from the magnetoresistance effect of the simplest repetition period according to the multilayer film giant magnetoresistance effect, propose ferromagnetic layer/separation layer/ferromagnetic layer/inverse ferric magnetosphere Spin Valve (spin-valve) structure, and at first in (NiFe/Cu/NiFe/FeMn) Spin Valve, found a kind of low saturation field giant magnetoresistance effect.Spin Valve because of its at room temperature, only need very low magnetic field (＜100e) just show magnetoresistance effect preferably (2-5%) and higher magnetic field sensitivity (0.5-5%/Oe), be successfully applied in the multiple device.At present, thus the research emphasis of Spin Valve is the selection of layers of material and stability thereof further improves GMR and magnetic field sensitivity.The spin valve thin film magneto-resistor comes from the electronic spin dependent scattering, the relative orientation that depends on two magnetosphere magnetic moments (spin), therefore need be to the strict control of layers of material, wish that inverse ferric magnetosphere has high resistance, corrosion-resistant and Heat stability is good, free layer generally adopts the material that coercive force is less and giant magnetoresistance effect is big, and pinning layer wants giant magnetoresistance effect big.Transition metal has limited the raising of Spin Valve GMR because himself magnetoresistance effect is little.Perovskite rare earth manganese oxide RE
1-xA
xMnO
3(RE is a rare earth element, A is the diatomic base earth elements) though since work magnetic field high, need work at low temperatures, limited its application, but huge magneto-resistor (can reach 106%) and minimum coercive force (about 10Oe) are just meeting the requirement of free layer and pinning layer, therefore only need a minimum external magnetic field just can obtain very big GMR effect.The promising professor of Nanjing University is at La
0.7Sr
0.3MnO
3/ Pr
0.5Sr
0.5MnO
3Also observed the antiferromagnetic exchange coupling in the mixed-powder, made GMR rise to 4% by 1.8%.In addition, select the chemical constitution of perovskite-type compounds, can show abundant performance, as La
0.7Sr
0.3MnO
3Be ferromagnetic metal state below 365K, surpassing 365K then is paramagnetic semiconductor attitude; Pr
0.5Sr
0.5MnO
3Be antiferromagnetic insulator; BaTiO
3Be electrical insulator; SrTiO
3Be superconductor etc.Therefore, huge perovskite family can satisfy the requirement of Spin Valve layers of material fully, thereby can guarantee to have excellent lattice matching between the adjacent layer material.Therefore, if the Spin Valve multi-layer film structure (low, working temperature height, highly sensitive) and the advantage of perovskite rare earth manganese oxide (huge magneto-resistor, minimum coercive force) are combined, are expected to prepare room temperature, low, high performance GMR material.To bring immeasurable influence to sensor and IT industry.
Chinese patent (publication number CN 1259500A) has been reported a kind of oxide giant magnet electric resistance material, but magnetoresistance effect only just can embody when low temperature 5K.
Chinese patent (publication number CN1146038) has been reported a kind of spin valve magneto-resistive effect magnetic head and disc driver, but its material is a metal alloy, does not relate to oxide.
United States Patent (USP) (application number 926939) has been reported a kind of magnetic resistance effect device and magnetic head, and same related material is a metal alloy.
Summary of the invention
Purpose of the present invention is exactly to solve existing oxide giant magnet electric resistance material serviceability temperature to cross low and the too high deficiency in work magnetic field, and a kind of oxide giant magnet electric resistance material multi-layer film structure and preparation technology thereof are provided.
Another object of the present invention provides a kind of purposes of high-sensitivity giant magnetic resistor material, and this material will be widely used in sensing, magnetic storage field.
The invention provides a kind of oxide giant magnet electric resistance Spin Valve, principal character is: the multilayer film that utilizes corresponding film plating process preparation to be made up of four layers of sull at least is inverse ferric magnetosphere, pinning layer, separation layer, free layer successively; Pinning layer and free layer are A
1-xB
xMO
3The type compound.A is one or more of atomic number 57 to 71 elements, and B is one or more of alkaline metal or earth alkali metal; M is an atomic number 22～30, at least a in 40～51 and 73～80 elements.Separation layer is non-magnetic conductor or non magnetic insulator or magnetic insulator or magnetic conductor.Inverse ferric magnetosphere is an antiferromagnetic compound.The thickness of each tunic is 0.1nm～200nm.The preparation method is sputtering method or sol-gel process or pulsed laser deposition.
Oxide giant magnet electric resistance Spin Valve provided by the invention, with respect to metal current type giant magnetoresistance Spin Valve, major advantage is: under the action of a magnetic field, its resistivity obviously reduces, and saturation field is low, the magnetic field sensitivity height.
Embodiment
Embodiment 1
In the present embodiment, use magnetically controlled sputter method, on monocrystalline silicon, deposit Pr successively
0.5Sr
0.5MnO
3, La
0.7Sr
0.3MnO
3, SrTiO
3, La
0.7Sr
0.3MnO
3, thickness is followed successively by 100nm, 100nm, 5nm, 200nm.The MR value of this material is than individual layer La
0.7Sr
0.3MnO
3At least improve 200%.
Claims (9)
1. oxide giant magnet electric resistance Spin Valve is characterized in that: the multilayer film that utilizes corresponding film plating process preparation to be made up of four layers of sull at least is inverse ferric magnetosphere, pinning layer, separation layer, free layer successively; Wherein pinning layer and free layer are A
1-xB
xMO
3The type compound; A is one or more of atomic number 57 to 71 elements, and B is one or more of alkaline metal or earth alkali metal; M is an atomic number 22～30, at least a in 40～51 and 73～80 elements.
2. a kind of oxide giant magnet electric resistance Spin Valve as claimed in claim 1 is characterized in that: separation layer is a non-magnetic conductor.
3. a kind of oxide giant magnet electric resistance Spin Valve as claimed in claim 1 is characterized in that: separation layer is non magnetic insulator.
4. a kind of oxide giant magnet electric resistance Spin Valve as claimed in claim 1 is characterized in that: separation layer is the magnetic insulator.
5. a kind of oxide giant magnet electric resistance Spin Valve as claimed in claim 1 is characterized in that: separation layer is a magnetic conductor.
6. a kind of oxide giant magnet electric resistance Spin Valve as claimed in claim 1 is characterized in that: inverse ferric magnetosphere is an antiferromagnetic compound.
7. a kind of oxide giant magnet electric resistance Spin Valve as claimed in claim 1 is characterized in that: the thickness of each tunic is 0.1nm～200nm.
8. a kind of oxide giant magnet electric resistance Spin Valve as claimed in claim 1 is characterized in that: the preparation method is sputtering method or sol-gel process or pulsed laser deposition.
9. a sensor, read and write of hard disc in computer magnetic head or memory device is characterized in that, comprise a kind of oxide giant magnet electric resistance Spin Valve as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021589615A CN100369117C (en) | 2002-12-31 | 2002-12-31 | Oxide giant magnet resistor spin valve, preparing process and its use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021589615A CN100369117C (en) | 2002-12-31 | 2002-12-31 | Oxide giant magnet resistor spin valve, preparing process and its use |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1512603A CN1512603A (en) | 2004-07-14 |
| CN100369117C true CN100369117C (en) | 2008-02-13 |
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ID=34237256
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021589615A Expired - Fee Related CN100369117C (en) | 2002-12-31 | 2002-12-31 | Oxide giant magnet resistor spin valve, preparing process and its use |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101964393B (en) * | 2010-08-10 | 2012-08-15 | 杭州电子科技大学 | Method for eliminating hysteresis of magnetic resistance of spin valve |
| CN102360545B (en) * | 2010-12-05 | 2015-06-17 | 北京德锐磁星科技有限公司 | Addressing method of magnetic biological array chip |
| CN102305825B (en) * | 2010-12-08 | 2015-11-18 | 北京德锐磁星科技有限公司 | Comprise the micro-electro-mechanical magnetic biosensor of asymmetric biologically active zone |
| CN110412081B (en) * | 2019-07-16 | 2022-03-08 | 三峡大学 | Method for measuring included angle between magnetic moments of non-collinear antiferromagnetic coupling atoms in Rare Earth (RE) -transition group metal (TM) alloy |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1146038A (en) * | 1995-08-11 | 1997-03-26 | 富士通株式会社 | Spin valve magneto-resistive effect magnetic head and magnetic disc drive |
| CN1161577A (en) * | 1995-09-14 | 1997-10-08 | 日本电气株式会社 | Magnetoresistive element and sensor |
| US5701223A (en) * | 1995-06-30 | 1997-12-23 | International Business Machines Corporation | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor |
| CN1337749A (en) * | 2000-05-24 | 2002-02-27 | 松下电器产业株式会社 | Magnetic-resistance-effect type element and magnetic storage element and magnetic head made thereby |
| US6353519B2 (en) * | 1998-12-04 | 2002-03-05 | International Business Machines Corporation | Spin valve sensor having antiparallel (AP) pinned layer structure with high resistance and low coercivity |
| CN1359099A (en) * | 2000-08-04 | 2002-07-17 | 松下电器产业株式会社 | Magnetic resistance effect device, magnetic head, magnetic recording equipment and storage device |
-
2002
- 2002-12-31 CN CNB021589615A patent/CN100369117C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5701223A (en) * | 1995-06-30 | 1997-12-23 | International Business Machines Corporation | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor |
| CN1146038A (en) * | 1995-08-11 | 1997-03-26 | 富士通株式会社 | Spin valve magneto-resistive effect magnetic head and magnetic disc drive |
| CN1161577A (en) * | 1995-09-14 | 1997-10-08 | 日本电气株式会社 | Magnetoresistive element and sensor |
| US6353519B2 (en) * | 1998-12-04 | 2002-03-05 | International Business Machines Corporation | Spin valve sensor having antiparallel (AP) pinned layer structure with high resistance and low coercivity |
| CN1337749A (en) * | 2000-05-24 | 2002-02-27 | 松下电器产业株式会社 | Magnetic-resistance-effect type element and magnetic storage element and magnetic head made thereby |
| CN1359099A (en) * | 2000-08-04 | 2002-07-17 | 松下电器产业株式会社 | Magnetic resistance effect device, magnetic head, magnetic recording equipment and storage device |
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| Publication number | Publication date |
|---|---|
| CN1512603A (en) | 2004-07-14 |
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