CA2070436A1 - Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques ameliorees - Google Patents

Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques ameliorees

Info

Publication number: CA2070436A1
Authority: CA; Canada
Prior art keywords: carbon; polycrystalline diamond; diamond; isotopically; thermal conductivity
Prior art date: 1991-07-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

CA002070436A

Other languages

English (en)

Inventor

Harold P. Bovenkerk

William F. Banholzer

Thomas R. Anthony

James F. Fleischer

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

General Electric Co

Original Assignee

Individual

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-07-08

Filing date

1992-06-04

Publication date

1993-01-09

1992-06-04 Application filed by Individual filed Critical Individual

1993-01-09 Publication of CA2070436A1 publication Critical patent/CA2070436A1/fr

Status Abandoned legal-status Critical Current

Links

239000010432 diamond Substances 0.000 title claims abstract description 92
229910003460 diamond Inorganic materials 0.000 title claims abstract description 87
OKTJSMMVPCPJKN-IGMARMGPSA-N Carbon-12 Chemical compound [12C] OKTJSMMVPCPJKN-IGMARMGPSA-N 0.000 title claims abstract description 23
OKTJSMMVPCPJKN-OUBTZVSYSA-N Carbon-13 Chemical compound [13C] OKTJSMMVPCPJKN-OUBTZVSYSA-N 0.000 title claims abstract description 23
238000005229 chemical vapour deposition Methods 0.000 claims description 30
238000000034 method Methods 0.000 claims description 26
239000000758 substrate Substances 0.000 claims description 7
229910052582 BN Inorganic materials 0.000 claims description 3
PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
229910000881 Cu alloy Inorganic materials 0.000 claims description 3
229910000990 Ni alloy Inorganic materials 0.000 claims description 3
229910052759 nickel Inorganic materials 0.000 claims description 3
239000013078 crystal Substances 0.000 abstract description 6
230000000155 isotopic effect Effects 0.000 abstract description 6
239000012535 impurity Substances 0.000 abstract description 4
238000005245 sintering Methods 0.000 abstract description 3
230000003116 impacting effect Effects 0.000 abstract description 2
239000000463 material Substances 0.000 description 6
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
CBQYNPHHHJTCJS-UHFFFAOYSA-N Alline Chemical compound C1=CC=C2C3(O)CCN(C)C3NC2=C1 CBQYNPHHHJTCJS-UHFFFAOYSA-N 0.000 description 4
239000010408 film Substances 0.000 description 4
UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
239000008246 gaseous mixture Substances 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
239000004215 Carbon black (E152) Substances 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
230000007547 defect Effects 0.000 description 2
239000007789 gas Substances 0.000 description 2
238000001534 heteroepitaxy Methods 0.000 description 2
229930195733 hydrocarbon Natural products 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
239000001257 hydrogen Substances 0.000 description 2
229910052739 hydrogen Inorganic materials 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
239000000126 substance Substances 0.000 description 2
SYOKIDBDQMKNDQ-XWTIBIIYSA-N vildagliptin Chemical compound C1C(O)(C2)CC(C3)CC1CC32NCC(=O)N1CCC[C@H]1C#N SYOKIDBDQMKNDQ-XWTIBIIYSA-N 0.000 description 2
NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
239000005977 Ethylene Substances 0.000 description 1
241001320695 Hermas Species 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
101100208721 Mus musculus Usp5 gene Proteins 0.000 description 1
241001274197 Scatophagus argus Species 0.000 description 1
-1 acctylene Chemical compound 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
238000013459 approach Methods 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
238000012217 deletion Methods 0.000 description 1
230000037430 deletion Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000008030 elimination Effects 0.000 description 1
238000003379 elimination reaction Methods 0.000 description 1
239000012212 insulator Substances 0.000 description 1
230000003993 interaction Effects 0.000 description 1
238000005259 measurement Methods 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000006911 nucleation Effects 0.000 description 1
238000010899 nucleation Methods 0.000 description 1
229940099990 ogen Drugs 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000001294 propane Substances 0.000 description 1
101150115956 slc25a26 gene Proteins 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1
238000003786 synthesis reaction Methods 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
239000010409 thin film Substances 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/0685—Crystal sintering

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Carbon And Carbon Compounds (AREA)
Chemical Vapour Deposition (AREA)

CA002070436A 1991-07-08 1992-06-04 Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques ameliorees Abandoned CA2070436A1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US72701691A	1991-07-08	1991-07-08
US727,016		1991-07-08

Publications (1)

Publication Number	Publication Date
CA2070436A1 true CA2070436A1 (fr)	1993-01-09

Family

ID=24920984

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA002070436A Abandoned CA2070436A1 (fr)	1991-07-08	1992-06-04	Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques ameliorees

Country Status (4)

Country	Link
JP (1)	JPH05194089A (fr)
CA (1)	CA2070436A1 (fr)
GB (1)	GB2257427B (fr)
ZA (1)	ZA924614B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH11100297A (ja) *	1997-08-01	1999-04-13	Tokyo Gas Co Ltd	ホウ素をドープした同位体ダイヤモンド及びその製造方法
JP5891634B2 (ja) *	2011-07-28	2016-03-23	住友電気工業株式会社	多結晶ダイヤモンドおよびその製造方法
JP5891635B2 (ja) *	2011-07-28	2016-03-23	住友電気工業株式会社	多結晶ダイヤモンドおよびその製造方法
JP5891636B2 (ja) *	2011-07-28	2016-03-23	住友電気工業株式会社	多結晶ダイヤモンドおよびその製造方法
WO2013015347A1 (fr) *	2011-07-28	2013-01-31	住友電気工業株式会社	Diamant polycristallin et son procédé de fabrication
JP6772711B2 (ja) *	2016-09-20	2020-10-21	住友電気工業株式会社	半導体積層構造体および半導体デバイス
EP4353677A4 (fr) *	2021-06-11	2024-07-31	Sumitomo Electric Hardmetal Corp	Polycristal composite et outil pourvu d?un polycristal composite
US20240199430A1 (en) *	2021-06-11	2024-06-20	Sumitomo Electric Hardmetal Corp.	Diamond polycrystalline body, and tool comprising diamond polycrystalline body
JP7180054B1 (ja) *	2021-06-11	2022-11-30	住友電工ハードメタル株式会社	ダイヤモンド多結晶体、及びダイヤモンド多結晶体を備える工具

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0206820A3 (fr) *	1985-06-27	1987-10-28	De Beers Industrial Diamond Division (Proprietary) Limited	Synthèse de diamant
GB8903793D0 (en) *	1989-02-20	1989-04-05	Plessey Co Plc	Diamond synthesis

1992
- 1992-06-04 CA CA002070436A patent/CA2070436A1/fr not_active Abandoned
- 1992-06-23 ZA ZA924614A patent/ZA924614B/xx unknown
- 1992-07-07 JP JP4179494A patent/JPH05194089A/ja not_active Withdrawn
- 1992-07-07 GB GB9214434A patent/GB2257427B/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
ZA924614B (en)	1993-12-23
JPH05194089A (ja)	1993-08-03
GB2257427B (en)	1995-05-24
GB2257427A (en)	1993-01-13
GB9214434D0 (en)	1992-08-19

Legal Events

Date	Code	Title	Description
1995-12-04	FZDE	Dead

Publication	Publication Date	Title
Liu et al.	1996	Diamond chemical vapor deposition: nucleation and early growth stages
US5540904A (en)	1996-07-30	Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity
Zhu et al.	1991	Growth and characterization of diamond films on nondiamond substrates for electronic applications
May	1995	CVD diamond: a new technology for the future?
US5298286A (en)	1994-03-29	Method for fabricating diamond films on nondiamond substrates and related structures
US5849413A (en)	1998-12-15	Oriented diamond film structures on nondiamond substrates
US5328548A (en)	1994-07-12	Method of synthesizing single diamond crystals of high thermal conductivity
US6162412A (en)	2000-12-19	Chemical vapor deposition method of high quality diamond
AU2001281404B2 (en)	2008-07-03	System and method for producing synthetic diamond
JP3176614B2 (ja)	2001-06-18	透明なダイヤモンド薄膜およびそれの製造方法
AU614605B2 (en)	1991-09-05	Diamond growth
CA2070436A1 (fr)	1993-01-09	Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques ameliorees
Pickrell et al.	1991	Near-interface characterization of diamond films on silica and silicon
Harker et al.	1990	Temperature and reactive etching effects on the microstructure of microwave plasma deposited diamond films
Tsui et al.	1986	Properties of AlxGa1− xAs (xAl≂ 0.3) grown by molecular‐beam epitaxy on misoriented substrates
US7338555B2 (en)	2008-03-04	Highly crystalline aluminum nitride multi-layered substrate and production process thereof
Vook	1984	Nucleation and growth of thin films
JPH08151295A (ja)	1996-06-11	単結晶ダイヤモンド膜気相合成用基板の製造方法
Yang et al.	2005	The formation of epitaxial hexagonal boron nitride on nickel substrates
US5437891A (en)	1995-08-01	Chemical vapor deposition of polycrystalline diamond with <100> orientation and <100> growth facets
Callahan et al.	1999	Synthesis and growth of gallium nitride by the chemical vapor reaction process (CVRP)
IE921375A1 (en)	1993-01-13	Isotopically-pure carbon-12 or carbon-13 polycrystalline¹diamond possessing enhanced thermal conductivity
Kshirsagar et al.	2005	Gradual transitions in morphology of diamond films grown by using N2 admixtures of CH4+ H2 gas in a hot filament assisted chemical vapour deposition system
Osaka et al.	1983	Influences of substrate surface structures and water vapor on the nucleation, epitaxy and graphoepitaxy of tin thin films grown on potassium chloride substrates
Mendelson	1966	Structural defects in epitaxial films—Role of surfaces in nucleation