AU724477B2 - Thin film actuated mirror array having dielectric layers - Google Patents
Thin film actuated mirror array having dielectric layers Download PDFInfo
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- AU724477B2 AU724477B2 AU52899/96A AU5289996A AU724477B2 AU 724477 B2 AU724477 B2 AU 724477B2 AU 52899/96 A AU52899/96 A AU 52899/96A AU 5289996 A AU5289996 A AU 5289996A AU 724477 B2 AU724477 B2 AU 724477B2
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- thin film
- layer
- array
- actuated mirrors
- electrodisplacive
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- 239000010409 thin film Substances 0.000 title claims description 190
- 238000000034 method Methods 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 230000000063 preceeding effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Optical Elements Other Than Lenses (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Video Image Reproduction Devices For Color Tv Systems (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Projection Apparatus (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
WO 97/28653 PCT/KR96/00048 1 THIN FILM ACTUATED MIRROR ARRAY HAVING DIELECTRIC LAYERS TECHNICAL FIELD OF THE INVENTION The present invention relates to an optical projection system; and, more particularly, to an array of M x N thin film actuated mirrors for use in the system and a method for the manufacture thereof, wherein each of the thin film actuated mirrors is provided with a multilayer stack of dielectric members successively formed on top of each of the thin film actuated mirrors to produce an optimum optical efficiency thereof.
BACKGROUND ART Among the various video display systems available in the art, an optical projection system is known to be capable of providing high quality displays in a large scale. In such an optical projection system, light from a lamp is uniformly illuminated onto an array of, M x N, thin film actuated mirrors, wherein each of the mirrors is coupled with each of the actuators. The actuators may be made of an electrodisplacive material such as a piezoelectric or an electrostrictive material which deforms in response to an electric field applied thereto.
The reflected light beam from each of the mirrors is incident upon an aperture of, an optical baffle. By applying an electrical signal to each of the actuators, the relative position of each of the mirrors to the incident light beam is altered, thereby causing a deviation in the optical path of the reflected beam from each of the mirrors. As the optical path of each of the reflected beams is varied, the amount of light reflected from each of the mirrors which passes through the aperture 2 is changed, thereby modulating the intensity of the beam.
The modulated beams through the aperture are transmitted onto a projection screen via an appropriate optical device such as a projection lens, to thereby display an image thereon.
In Figs. 1A to 1G, there are illustrated manufacturing steps involved in preparing an array 10 of M x N thin film actuated mirrors 11, wherein M and N are integers, disclosed in U.S. Patent No. 5,636,070 entitled "THIN FILM ACTUATED MIRROR ARRAY".
The process for manufacturing the array 10 begins with the preparation of an active matrix 20 comprising a substrate 22, an array of M x N transistors(not shown) and an array of M x N connecting terminals 24.
In a subsequent step, there is formed on top of the S" active matrix 20 a thin film sacrificial layer 40 by using a sputtering or an evaporation method if the thin film sacrificial layer 40 is made of a metal, a chemical vapor 20 deposition(CVD) or a spin coating method if the thin film sacrificial layer 40 is made of a phosphor-silicate glass(PSG), or a CVD method if the thin film sacrificial layer 40 is made of a poly-Si.
Thereafter, there is formed a supporting layer including an array of M x N supporting members surrounded by the thin film sacrificial layer 40, wherein the supporting layer 15 is formed by: creating an array of M x N empty slots(not shown) in the thin film sacrificial o* layer 40 by using a photolithography method, each of the empty slots being located around the connecting terminals 24; and forming a supporting member 30 in each of the empty slots by using a sputtering or a CVD method, as shown in Fig. IA. The supporting members 30 are made of an insulating material.
In a following step, an elastic layer 70 made of the WO 97/28653 PCT/KR96/00048 3 same insulating material as the supporting members 30 is formed on top of the supporting layer 15 by using a Sol- Gel, a sputtering or a CVD method.
Subsequently, a conduit 35 made of a metal is formed in each of the supporting members 30 by: first creating an array of M x N holes(not shown), each of the holes extending from top of the elastic layer 70 to top of the connecting terminals 24, by using an etching method; and filling therein with the metal to thereby form the conduit 35, as shown in Fig. lB.
In a next step, a second thin film layer 60 made of an electrically conducting material is formed on top of the elastic layer 70 including the conduits 35 by using a sputtering method. The second thin film layer 60 is electrically connected to the transistors through the conduits 35 formed in the supporting members Then, a thin film electrodisplacive layer 80 made of a piezoelectric material, lead zirconium titanate(PZT), is formed on top of the second thin film layer 60 by using a Sol-Gel, a sputtering or a CVD method, as shown in Fig. 1C.
In an ensuing step, the thin film electrodisplacive layer 80, the second thin film layer 60 and the elastic layer 70 are patterned into an array of M x N thin film electrodisplacive members 85, an array of M x N second thin film electrodes 65 and an array of M x N elastic members 75 by using a photolithography or a laser trimming method until the supporting layer 15 is exposed, as shown in Fig. ID. Each of the second thin film electrodes 65 is connected electrically to a corresponding transistor through the conduit 35 formed in each of the supporting members 30 and functions as a signal electrode in each of the thin film actuated mirrors 11.
Next, each of the thin film electrodisplacive members 85 is heat treated to allow a phase transition to take WO 97/28653 PCT/KR96/00048 4 place to thereby form an array of M x N heat treated structures(not shown). Since each of the thin film electrodisplacive members 85 is sufficiently thin, there is no need to pole it in case it is made of a piezoelectric material: for it can be poled with the electric signal applied during the operation of the thin film actuated mirrors 11.
After the above step, an array of M x N first thin film electrodes 55 made of an electrically conducting and light reflecting material, aluminum(Al) or silver(Ag), is formed on top of the thin film electrodisplacive members 85 in the array of M x N heat treated structures by first forming a layer 50, made of the electrically conducting and light reflecting material, completely covering top of the array of M x N heat treated structures, including the exposed supporting layer using a sputtering method, as shown in Fig. IE, and then selectively removing the layer 50, using an etching method, resulting in an array 90 of M x N actuated mirror structures 95, wherein each of the actuated mirror structures 95 includes a top surface and four side surfaces, as shown in Fig. IF. Each of the first thin film electrodes 55 functions as a mirror as well as a bias electrode in each of the thin film actuated mirrors 11.
The preceeding step is then followed by completely covering the top surface and the four side surfaces in each of the actuated mirror structures 95 with a thin film protection layer(not shown).
The thin film sacrificial layer 40 in the supporting layer 15 is then removed by using an etching method.
Finally, the thin film protection layer is removed by using an etching method to thereby form the array 10 of M x N thin film actuated mirrors 11, as shown in Fig. 1G.
There are certain deficiencies associated with the above described array 10 of thin film actuated mirrors 11 WO 97/28653 PCT/KR96/00048 5 and the method for the manufacture thereof. During the removal of the thin film protection layer, an etchant used therein may chemically attack the first thin film electrode 55, which also functions as a mirror, in each of the thin film actuated mirrors 11, which may adversely affect the optical efficiency of the array 10 of thin film actuated mirrors 11. In addition, the first thin film electrode 55 may become oxidized, especially when the first thin film electrode 55 is made of Ag, further reducing the reflectivity thereof.
DISCLOSURE OF THE INVENTION It is, therefore, a primary object of the present invention to provide an array of M x N thin film actuated mirrors capable of ensuring an optimum optical efficiency and a method for the manufacture thereof.
In accordance with one aspect of the present invention, there is provided an array of M x N thin film actuated mirrors, wherein M and N are integers, for use in an optical projection system, the array comprising: an active matrix including a substrate, an array of M x N connecting terminals and an array of M x N transistors, wherein each of the connecting terminals is electrically connected to a corresponding transistor in the array of M x N transistors; M x N conduits, wherein each of the conduits is made of an electrically conducting material; an array of M x N actuating structures, each of the actuating structures being provided with a connecting and a light reflecting portions, each of the actuating structures including an elastic member, a second thin film electrode, a thin film electrodisplacive member and a first thin film electrode, wherein each of the conduits is located at the connecting portion in each of the actuating structures, extending from bottom of the second thin film WO 97/28653 PCTIKR96/00048 6 electrode to top of the connecting terminal connected electrically to a corresponding transistor, to thereby allow the second thin film electrode to function as a signal electrode in each of the thin film actuated mirrors, and the first thin film electrode made of a light reflecting and electrically conducting material is grounded to thereby function as a mirror and a bias electrode in each of the thin film actuated mirrors; and M x N number of multilayer stacks of thin film dielectric members, each of the thin film dielectric members placed on top of the light reflecting portion in each of the actuating structures, wherein said each of the thin film dielectric members has a predetermined thickness and a specific refractive index.
In accordance with another aspect of the present invention, there is provided a method for the manufacture of an array of M x N thin film actuated mirrors, the method comprising the steps of: providing an active matrix including a substrate, an array of M x N connecting terminals and an array of M x N transistors, wherein each of the connecting terminals is electrically connected to a corresponding transistor; depositing a thin film sacrificial layer on top of the active matrix; creating an array of M x N empty slots in the thin film sacrificial layer, each of the empty slots being located around top of the connecting terminals; depositing an elastic layer made of an insulating material on top of the thin film sacrificial layer while filling the empty slots; forming an array of M x N conduits in the elastic layer, each of the conduits extending from top of the elastic layer to top of a corresponding connecting terminal; depositing a second thin film layer, a thin film electrodisplacive layer and a first thin film layer successively on top of the elastic layer, wherein the second thin film layer is made of an electrically conducting material, and the first WO 97/28653 PCT/KR96/00048 7 thin film layer is made of an electrically conducting and light reflecting material; patterning the first thin film, the thin film electrodisplacive, the second thin film and the elastic layers, respectively, until the thin film sacrificial layer is exposed, thereby forming an array of M x N semifinished actuating structures, wherein each of the semifinished actuating structures is provided with a first thin film electrode, a thin film electrodisplacive member, a second thin film electrode and an elastic member; depositing a plurality of thin film dielectric layers successively on top of the semifinished actuating structures including the exposed thin film sacrificial layer, each of the thin film dielectric layers having a predetermined thickness; patterning the plurality of thin film dielectric layers, respectively, into M x N number of multilayer stacks of thin film dielectric members, until the thin film sacrificial layer is exposed again, thereby forming an array of M x N semifinished actuated mirrors, wherein the plurality of thin film dielectric layers are patterned in such a way that each of the semifinished actuated mirrors is divided arbitrarily into an actuating and a light reflecting portions, each of the conduits and each of the thin film dielectric members being located at the actuating portion and the light reflecting portion in each of the semifinished actuated mirrors, respectively; covering each of the semifinished actuated mirrors with a thin film protection layer to thereby form an array of M x N protected actuated mirrors; removing the thin film sacrificial layer; and removing the thin film protection layer to thereby form the array of M x N thin film actuated mirrors.
BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects and features of the WO 97/28653 PCTIKR96/00048 8 present invention will become apparent from the following description of the preferred embodiments, when taken in conjunction with the accompanying drawings, in which: Figs. 1A to IG illustrate schematic cross sectional views setting forth manufacturing steps for an array of M x N thin film actuated mirrors previously disclosed; Fig. 2 presents a cross sectional view of an array of M x N thin film actuated mirrors in accordance with the present invention; and Figs. 3A to 3F provide schematic cross sectional views explaining the present method for manufacturing the array of M x N thin film actuated mirrors shown in Fig. 2.
MODES OF CARRYING OUT THE INVENTION Referring now to Figs. 2 and 3A to 3F, there are provided a cross sectional view of an array 200 of M x N thin film actuated mirrors 201, wherein M and N are integers, for use in an optical projection system and schematic cross sectional views setting forth a method for the manufacture thereof, respectively. It should be noted that like parts appearing in Figs. 2 and 3A to 3F are represented by like reference numerals.
In Fig. 2, there is provided a cross sectional view of an array 200 of M x N thin film actuated mirrors 201 in accordance with one embodiment of the present invention, the array 200 including an active matrix 210, M x N conduits 225, an array of M x N actuating structures 300 and M x N number of multilayer stacks 400 of thin film dielectric members 401. For the sake of simplicity, in Fig. 2, there is shown an array 200 of M x N thin film actuated mirrors 201, each of the thin film actuated mirrors 201 having a multilayer stack 400 of thin film dielectric members 401, wherein the multilayer stack 400 consists of a pair of thin film dielectric members 401.
WO 97/28653 PCT/KR96/00048 9 The active matrix 210 includes a substrate 212, an array of M x N connecting terminals 214 and an array of M x N transistors(not shown), wherein each of the connecting terminals 214 is electrically connected to a corresponding transistor.
Each of the actuating structures 300 is provided with a connecting and a light reflecting portions 330, 335, and includes an elastic member 235, a second thin film electrode 245, a thin film electrodisplacive member 255 and a first thin film electrode 265. Each of the conduits 225 made of an electrically conducting material is located at the connecting portion 330 in each of the actuating structures 300, extending from bottom of the second thin film electrode 245 to top of a corresponding connecting terminal 214 connected electrically to the transistor, thereby electrically connecting the second thin film electrode 245 to the transistor, allowing the second thin film electrode 245 to function as a signal electrode in each of the thin film actuated mirrors 201. The first thin film electrode 265 made of an electrically conducting and light reflecting material, Al, is electrically connected to ground, allowing it to function as a mirror as well as a bias electrode in each of the thin film actuated mirrors 201.
Each of the multilayer stacks 400 of thin film dielectric members 401 is placed on top of the light reflecting portion 335 in each of the actuating structures 300, wherein each of the thin film dielectric members 401 has a predetermined thickness and a specific refractive index.
In the visible region, it is possible to increase the reflectance of a simple metal layer by booting it with extra dielectric layers.
The characteristic reflectance R of a metal in air at normal incidence is WO 97/28653 PCT/KR96/00048 10 1-[2n/ (l+n +k 2 1+[2n/ (l+n 2 +k 2 Eq. (1) wherein n and k are the refractive index and the extinction coefficient of the metal, respectively.
For example, if the metal is overcoated with two quarter-waves of material of refractive indices n i and n n 2 being next to the metal, then the optical reflectance R thereof in air at normal incidence is 1- [2 (n 1 /n 2 2 (nln 2 4 (n 2 +k 2 R1+ [2 (n (nn (n 1+ [2 (nl/n 2 2n] (nln 4 (n2+k 2 Eq. (2) This will be greater than the reflectance metal, given by Eq. if 2(nl/n 2 2 n 2n 1+ (nl/n 2 4 (n 2 +k 2 l+n 2 +k 2 ,which is satisfied by either 1 2>1 n 2 of the bare Eq. (3) (n 2< 1 n 2 n2+k 2 Eq. (4) WO 97/28653 PCT/KR96/00048 11 assuming that n 2 +k 2 1.
Accordingly to Eq. the reflectance of any metal can be boosted by a pair of quarter-wave layers for which (nl/n 2 n, being on the outside and n 2 next to the metal. The higher this ratio, the greater the increase in the reflectance.
For example, the untreated reflectance of aluminum is approximately 91.6 for a light beam having a wavelength of 550nm at normal incidence.
If the aluminum is covered by two quarter-waves consisting of magnesium fluoride of index 1.38, next to the aluminum, followed by zinc sulfide of index 2.35, then (nl/n 2 2 =2.9 and from Eq. the reflectance jumps to 96.9%.
The reflectance of each of the thin film actuated mirrors 201 in the array 200 can be maximized by optimizing the thickness and the refractive index of each of the thin film dielectric members 401 constituting the multilayer stack 400, the number of thin film dielectric members 401 and the incidence through a simulation.
Each of the multilayer stacks 400 of thin film dielectric members 401, as well as protecting the first thin film electrode 265 in each of the actuating structures 300 from chemical or physical damages, but also provides the maximum reflectance in each of the thin film actuated mirrors 201, thereby ensuring an optimum optical efficiency in each of the thin film actuated mirrors 201 in the array 200.
In Figs. 3A to 3F, there are provided schematic cross sectional views explaining a method for the manufacture of the array 200 of M x N thin film actuated mirrors 201 shown in Fig. 2.
The process for the manufacture of the array 200 begins with the preparation of an active matrix 210 WO 97/28653 PCT/KR96/00048 12 including a substrate 212, an array of M x N connecting terminals 214 and an array of M x N transistors(not shown), wherein the substrate 212 is made of an insulating material, Si-wafer.
In a subsequent step, a thin film sacrificial layer 220, having a thickness of 0.1 2 pm, and made of a metal, copper(Cu) or nickel(Ni), a phosphor-silicate glass(PSG) or a poly-Si, is formed on top of the active matrix 210. The thin film sacrificial layer 220 is formed by using a sputtering or an evaporation method if the thin film sacrificial layer 220 is made of a metal, a chemical vapor deposition(CVD) method or a spin coating method if the thin film sacrificial layer 220 is made of a PSG, or a CVD method if the thin film sacrificial layer 220 is made of a poly-Si.
Thereafter, there is formed an array of M x N empty slots(not shown) in the thin film sacrificial layer 220 by using a photolithography method. Each of the empty slots is located around top of the connecting terminals 214.
In a following step, an elastic layer 230, made of an insulating material, silicon nitride, and having a thickness of 0.1 2 pm, is deposited on top of the thin film sacrificial layer 220 including the empty slots by using a Sol-Gel, a sputtering or a CVD method.
Subsequently, there is formed in the elastic layer 230 M x N conduits 225 made of a metal, tungsten(W).
Each of the conduits 225 is formed by: first creating an array of M x N holes(not shown), each of the holes extending from top of the elastic layer 230 to top of the connecting terminals 214 by using an etching method; and filling therein with the metal by using a sputtering method, as shown in Fig. 3A.
Then, a second thin film layer 240, made of an electrically conducting material, platinum(Pt) or platinum/titanium(Pt/Ti), and having a thickness of 0.1 WO 97/28653 PCT/KR96/00048 13 2 pm, is formed on top of the elastic layer 230 and the conduits 225 by using a sputtering or a vacuum evaporation method.
Next, a thin film electrodisplacive layer 250, made of a piezoelectric material, lead zirconium titanate(PZT), or an electrostrictive material, lead magnesium niobate(PMN), and having a thickness of 0.1 2 pm, is deposited on top of the second thin film layer 240 by using a vacuum evaporation or a sputtering method. The thin film electrodisplacive layer 250 is then heat treated to allow a phase transition to take place.
In a next step, a first thin film layer 260, made of an electrically conducting and light reflecting material, aluminum(Al) or silver(Ag), and having a thickness of 0.1 2 pm, is formed on top of the thin film electrodisplacive layer 250 by using a sputtering or a vacuum evaporation method, as shown in Fig. 3B.
In a subsequent step, the first thin film layer 260, the thin film electrodisplacive layer 250, the second thin film layer 240 and the elastic layer 230 are, respectively, patterned until the thin film sacrificial layer 220 is exposed, thereby forming an array 340 of M x N semifinished actuating structures 341, as shown in Fig.
3C, wherein each of the semifinished actuating structures 341 includes a first thin film electrode 265, a thin film electrodisplacive member 255, a second thin film electrode 245 and an elastic member 235. The second thin film electrode 245 in each of the semifinished actuating structures 341 is electrically connected to the transistor through a corresponding conduit 225 and a corresponding connecting terminal 214, thereby functioning as a signal electrode in each of the thin film actuated mirrors 201.
The first thin film electrode 265 in each of the semifinished actuating structures 341 functions as a mirror and a bias electrode in each of the thin film WO 97/28653 PCT/IKR96100048 14 actuated mirrors 201.
Since each of the thin film electrodisplacive members 255 is sufficiently thin, there is no need to pole it in case it is made of a piezoelectric material: for it can be poled with the electric signal applied during the operation of the thin film actuated mirrors 201.
Subsequently, a plurality of thin film dielectric layer(not shown) is deposited successively on top of the semifinished actuating structures 341 including the exposed thin film sacrificial layer 220 by using a sputtering or an evaporation method. Each of the thin film dielectric layers has a predetermined thickness and a refractive index. Again for the sake of simplicity, only two thin film dielectric layers are shown.
After the above step, the plurality of thin film dielectric layers are patterned, respectively, until the thin film sacrificial layer 220 is exposed again, into M x N number of multilayer stacks 400 of thin film dielectric members 401 by using a photolithography or a laser trimming method, thereby forming an array 320 of M x N semifinished actuated mirrors 321, as shown in Fig.
3D. The plurality of thin film dielectric layers are patterned in such a way that each of the semifinished actuated mirrors 321 has an actuating and a light reflecting portions 330, 335, wherein each of the conduits 225 is located at the actuating portion 330 in each of the semifinished actuated mirrors 321, and each of the multilayer stacks 400 of thin film dielectric members 401 is located at the light reflecting portion 335 in each of the semifinished actuated mirrors 321. Each of the semifinished actuated mirrors 321 includes the multilayer stack 400 of thin film dielectric members 401, the first thin film electrode 265, the thin film electrodisplacive member 255, the second thin film electrode 245 and the elastic member 235.
WO 97/28653 PCT/KR96/00048 15 In an ensuing step, each of the semifinished actuated mirrors 321 is completely covered with a thin film protection layer 290 to thereby form an array 310 of M x N protected actuated mirrors 311, as shown in Fig. 3E.
The thin film sacrificial layer 220 is then removed by using an etching method. Finally, the thin film protection layer 290 is removed to thereby form the array 200 of M x N thin film actuated mirrors 201, as shown in Fig. 3F.
It should be understood that, even though each of the thin film actuated mirrors 201 prepared using the inventive method has a unimorph structure, the inventive method can be equally applied to manufacturing an array of thin film actuated mirrors, each of the thin film actuated mirrors having a bimorph structure, for the latter case just involves the formation of an additional electrodisplacive layer and an additional electrode layer.
It should be further noted that the inventive method may be modified to allow the manufacture of an array of thin film actuated mirrors having different geometries.
While the present invention has been described with respect to certain preferred embodiments only, other modifications and variations may be made without departing from the scope of the present invention as set forth in the following claims.
Claims (5)
- 2. The array of claim 1, wherein each of the thin film actuated mirrors is of a bimorph structure, the bimorph structure including a pair of electrodisplacive members separated by an electrode.
- 3. The array of claim 2, wherein each of the thin film actuated mirrors is further provided with an additional electrodisplacive layer and an additional electrode layer.
- 4. A method for the manufacture of an array of M x N thin film actuated mirrors, the method comprising the steps of: providing an active matrix including a substrate, an array of M x N connecting terminals and an array of M x N transistors, wherein each of the connecting terminals are electrically connected to a corresponding transistor; depositing a thin film sacrificial layer on top of the active matrix; e creating an array of M x N empty slots in the thin 20 film sacrificial layer, each of the empty slots being i located around top of the connecting terminals; depositing an elastic layer made of an insulating material on top of the thin film sacrificial layer while filling the empty slots; forming an array of M x N conduits in the elastic layer, each of the conduits extending from top of the elastic layer to top of a corresponding connecting terminal; depositing a second thin film layer, a thin film electrodisplacive layer and a first thin film layer successively on top of the elastic layer, wherein the second thin film layer is made of an electrically conducting material, and the first thin film layer is made of an electrically conducting and light reflecting material; 18 patterning the first thin film, the thin film electrodisplacive, the second thin film and the elastic layers, respectively, until the thin film sacrificial layer is exposed, thereby forming an array of M x N semifinished actuating structures, wherein each of the semifinished actuating structures areprovided with a first thin film electrode, a thin film electrodisplacive member, a second thin film electrode and an elastic member; depositing a plurality of thin film dielectric layers successively on top of the semifinished actuating structures including the exposed thin film sacrificial layer, each of the thin film dielectric layers having a predetermined thickness; patterning the plurality of thin film dielectric layers, respectively, into M x N number of multilayer stacks of thin film dielectric members, until the thin film sacrificial layer is exposed again, thereby forming an array of M x N semifinished actuated mirrors, wherein S: the plurality of thin film dielectric layers are patterned :20 in such a way that each of the semifinished actuated mirrors are divided arbitrarily into an actuating and a light reflecting portions, each of the conduits and each of the thin film dielectric members being located at the actuating portion and the light reflecting portion in each of the semifinished actuated mirrors, respectively; covering each of the semifinished actuated mirrors with a thin film protection layer to thereby form an array e.o of M x N protected actuated mirrors; removing the thin film sacrificial layer; and removing the thin film protection layer to thereby form the array of M x N thin film actuated mirrors. The method of claim 4, wherein the plurality of thin film dielectric layers are deposited by using a sputtering or an evaporation method. WO 97/28653 PCT/KR96/00048 19
- 6. The method of claim 4, wherein each of the thin film actuated mirrors has a bimorph structure, the bimorph structure including a pair of electrodisplacive members separated by an electrode.
- 7. The method of claim 4 further comprises the formation of an additional electrode layer and an additional electrodisplacive layer, successively, after depositing the electrodisplacive layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR96/2315 | 1996-01-31 | ||
| KR1019960002315A KR100229790B1 (en) | 1996-01-31 | 1996-01-31 | Actuated mirror array |
| PCT/KR1996/000048 WO1997028653A1 (en) | 1996-01-31 | 1996-04-08 | Thin film actuated mirror array having dielectric layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU5289996A AU5289996A (en) | 1997-08-22 |
| AU724477B2 true AU724477B2 (en) | 2000-09-21 |
Family
ID=36955865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU52899/96A Ceased AU724477B2 (en) | 1996-01-31 | 1996-04-08 | Thin film actuated mirror array having dielectric layers |
Country Status (14)
| Country | Link |
|---|---|
| JP (1) | JP4152437B2 (en) |
| KR (1) | KR100229790B1 (en) |
| CN (1) | CN1104815C (en) |
| AR (1) | AR001149A1 (en) |
| AU (1) | AU724477B2 (en) |
| BR (1) | BR9607803A (en) |
| CA (1) | CA2216557A1 (en) |
| CZ (1) | CZ304197A3 (en) |
| HU (1) | HUP9801148A3 (en) |
| PE (1) | PE47197A1 (en) |
| PL (1) | PL179839B1 (en) |
| TW (1) | TW348324B (en) |
| UY (1) | UY24186A1 (en) |
| WO (1) | WO1997028653A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4582380B2 (en) * | 2001-05-11 | 2010-11-17 | ソニー株式会社 | LIGHT MODULATION ELEMENT, OPTICAL DEVICE USING THE SAME, AND LIGHT MODULATION ELEMENT MANUFACTURING METHOD |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995012287A1 (en) * | 1993-10-29 | 1995-05-04 | Daewoo Electronics Co., Ltd. | Thin film actuated mirror array and methods for its manufacture |
| WO1995013693A1 (en) * | 1993-11-19 | 1995-05-26 | Micrel, Inc. | Diamond shaped gate mesh for cellular mos transistor array |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5260798A (en) * | 1989-11-01 | 1993-11-09 | Aura Systems, Inc. | Pixel intensity modulator |
| US5247222A (en) * | 1991-11-04 | 1993-09-21 | Engle Craig D | Constrained shear mode modulator |
| JP3165444B2 (en) * | 1993-11-09 | 2001-05-14 | テーウー エレクトロニクス カンパニー リミテッド | M × N thin-film actuated mirror array and method of manufacturing the same |
-
1996
- 1996-01-04 TW TW085100044A patent/TW348324B/en active
- 1996-01-31 KR KR1019960002315A patent/KR100229790B1/en not_active IP Right Cessation
- 1996-03-04 AR AR33563296A patent/AR001149A1/en unknown
- 1996-03-20 PE PE1996000192A patent/PE47197A1/en not_active Application Discontinuation
- 1996-03-22 UY UY24186A patent/UY24186A1/en not_active IP Right Cessation
- 1996-04-08 BR BR9607803A patent/BR9607803A/en not_active Application Discontinuation
- 1996-04-08 JP JP52750197A patent/JP4152437B2/en not_active Expired - Fee Related
- 1996-04-08 CZ CZ973041A patent/CZ304197A3/en unknown
- 1996-04-08 WO PCT/KR1996/000048 patent/WO1997028653A1/en not_active Application Discontinuation
- 1996-04-08 AU AU52899/96A patent/AU724477B2/en not_active Ceased
- 1996-04-08 CN CN96192838A patent/CN1104815C/en not_active Expired - Fee Related
- 1996-04-08 CA CA002216557A patent/CA2216557A1/en not_active Abandoned
- 1996-04-08 PL PL96322490A patent/PL179839B1/en unknown
- 1996-04-08 HU HU9801148A patent/HUP9801148A3/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995012287A1 (en) * | 1993-10-29 | 1995-05-04 | Daewoo Electronics Co., Ltd. | Thin film actuated mirror array and methods for its manufacture |
| WO1995013693A1 (en) * | 1993-11-19 | 1995-05-26 | Micrel, Inc. | Diamond shaped gate mesh for cellular mos transistor array |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2216557A1 (en) | 1997-08-07 |
| KR100229790B1 (en) | 1999-11-15 |
| AU5289996A (en) | 1997-08-22 |
| PL322490A1 (en) | 1998-02-02 |
| UY24186A1 (en) | 1996-06-21 |
| WO1997028653A1 (en) | 1997-08-07 |
| TW348324B (en) | 1998-12-21 |
| CN1104815C (en) | 2003-04-02 |
| HUP9801148A2 (en) | 1998-08-28 |
| JP4152437B2 (en) | 2008-09-17 |
| CN1179871A (en) | 1998-04-22 |
| HUP9801148A3 (en) | 2002-07-29 |
| MX9707476A (en) | 1997-11-29 |
| BR9607803A (en) | 1998-07-07 |
| CZ304197A3 (en) | 1998-04-15 |
| KR970060514A (en) | 1997-08-12 |
| AR001149A1 (en) | 1997-09-24 |
| PL179839B1 (en) | 2000-11-30 |
| JPH11503538A (en) | 1999-03-26 |
| PE47197A1 (en) | 1998-02-06 |
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