AU594644B2 - A thermostable polymer system for microelectronic applications which can be cross-linked by irradiation - Google Patents
A thermostable polymer system for microelectronic applications which can be cross-linked by irradiation Download PDFInfo
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- AU594644B2 AU594644B2 AU45964/85A AU4596485A AU594644B2 AU 594644 B2 AU594644 B2 AU 594644B2 AU 45964/85 A AU45964/85 A AU 45964/85A AU 4596485 A AU4596485 A AU 4596485A AU 594644 B2 AU594644 B2 AU 594644B2
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- 229920000642 polymer Polymers 0.000 title claims abstract description 33
- 238000004377 microelectronic Methods 0.000 title description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 150000005827 chlorofluoro hydrocarbons Chemical class 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 239000007858 starting material Substances 0.000 abstract description 13
- 239000004922 lacquer Substances 0.000 abstract description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 150000002170 ethers Chemical class 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 4
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 3
- -1 COC1 Chemical group 0.000 description 3
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 3
- 229930016911 cinnamic acid Natural products 0.000 description 3
- 235000013985 cinnamic acid Nutrition 0.000 description 3
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- WOGITNXCNOTRLK-VOTSOKGWSA-N (e)-3-phenylprop-2-enoyl chloride Chemical compound ClC(=O)\C=C\C1=CC=CC=C1 WOGITNXCNOTRLK-VOTSOKGWSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- XUKUURHRXDUEBC-KAYWLYCHSA-N Atorvastatin Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-KAYWLYCHSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- 101000913968 Ipomoea purpurea Chalcone synthase C Proteins 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 101100338884 Mus musculus Hhip gene Proteins 0.000 description 1
- 101000907988 Petunia hybrida Chalcone-flavanone isomerase C Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000010382 chemical cross-linking Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S525/00—Synthetic resins or natural rubbers -- part of the class 520 series
- Y10S525/922—Polyepoxide polymer having been reacted to yield terminal ethylenic unsaturation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Polymerisation Methods In General (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Linear fluorooligomers having at least two reactive end groups per polymer molecule are incorporated into radiation sensitive polymer systems which have improved continuous temperature resistance and low dielectric constant. The polymer systems can be applied as lacquers. Preferably perfluorated poly-ethers and perfluorated alkanes are used as starting compounds. The polymeric product is usable as a coating for the production of printed multi-layer wirings and economises on through-bores and additional copper intermeidate layers. A further field of application exists in the field of integrated semiconductor ciruits in VLSI-technology for the production of negative photo-resists.
Description
'4
Y
594644 FORM 10 SPRUSON FERGUSON COMMONWEALTH OF AUSTRALIA PATENTS ACT 1952 COMPLETE SPECIFICATION
(ORIGINAL)
FOR OFFICE USE: 4 7 L .59 41! S.
Class Int. Class "o 0 0 a 9 o 0 0 0 00 00 0 0000 00*0 Complete Specification Lodged: Accepted: Published: Priority: Related Art: This document contains the amendments made uner Section and is correct for printing.
o a 00 4 0 0* 0 00 o o0 0 00 00 0 o o0 o Name of Applicant: Address of Applicant: Actual Inventor(s): Address for Service: SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2, D-8000 MUnchen 2, Federal Republic of Germany KLAUS BUDDE, FRIEDRICH KOCH and FERDINAND
QUELLA
Spruson Ferguson, Patent Attorneys, Level 33 St Martins Tower, 31 Market Street, Sydney, New South Wales, 2000, Australia 6 i 0 t s
L
Complete Specification for the invention entitled: "A THERMOSTABLE POLYMER SYSTEM FOR MICROELECTRONIC APPLICATIONS WHICH CAN BE CROSS-LINKED BY IRRADIATION" The following statement is a full description of this invention, including the best method of performing it known to us.
SBR/JAP 0079F p :i ABSTRACT OF THE INVENTION "A THERMOSTABLE POLYMER SYSTEM FOR MICROELECTRONIC APPLICATIONS WHICH CAN BE CROSS-LINKED BY IRRADIATION" In order to achieve a low dielectric constant and to improve the continuous temperature resistance of radiation-sensitive synthetic resin lacquers, a polymer system is provided which contains as starting material for reaction with a radiation-sensitive material, a linear fluoropolymer having at least two reactive end groups per polymer molecule. Preferably, perfluorinated o 4Q polyether compounds and perfluorinated alkanes are used.
0 The product is used as a coating 13, 4) for the production of multi-layer printed circuits and economises on through-bores and additional intermediate copper layers. A further field of application is integrated S" semicond.uctor circuits in the VLSI-technique for use as negative photo-resists.
S(Fig. 2) 11 2 -2- The present invention relates to thermostable polymer systems for microelectronic applications which can be cross-linked by irradiation, It is known to produce printed multi-layer wiring by pressing thin-layer laminates which contain the appropriate wiring image, on to one another using adhesive films. The thin-layer laminates and adhesive films form insulating layers between the individual conductor path levels, After the formatidn of the multilayer circuit boards, the wiring connections and contact points between the individual layers are produced by means of bores and subsequent through-contacting via these bores.
In order to avoid crack formations in the contact layer and. in the intermediate layers, and possible delamination effects during soldering, or in the event of temperature changes, this process as described above has been improved by providing that both sides of the thin-layer lamina.tes are covered with copper and then coated with a photo-resist. This resist, which may be either a negative or a positive resist, is covered with an appropriate mask, exposed to light and deve-loped, The residual developed resin layers serve as a resist during the subsequent etching of the copper.
When the unrequired copper has been removed by etching, the desired conductor image is formed to which the photo- ,i r 1 ~i;i *0Q6 o o 0e 0 00 0 4 4,a 0*0
I
Fi sa i i: 3 etch-resist adheres when a negative resist is used. These resists residues are removed, either using organic solvents, or mechanically, and the nex.t layer is then applied.
In the case of structure formation by means of irradiation, it is necessary to differentiate between a low energy region (wavelength exceeding 100 nm) and a high energy region, for example X-rays, or electron rays. Naturally, the resolution of the step of exposure to light increases when radiation of a shorter wavelength is used. As disclosed in an article by A Ledwith "IEE Proceedings", Vol. 130, Part 1, No. 5, October 1983 on pages 245 to 251, the limits are about 1 im for UVradiation and about 80 R for electron radiation.
Intervals between conductor paths of less than 20 pm are required in the construction of microelectronic components. Consequently, the material which is used must have a low dielectric constant. As disclosed in an article by A J Blodgett in "Spektrum der Wissenschaft", September 1983, pages 94 to 106, the dielectric constant should have a value of less than 3. It is stated in the same article that, in the case of highly integrated components, during operation a continuous high thermal stress, in the region o< about 100 C, occurs.
r a polymer system which carl inked by exposure -4 ic---h--a-tc ha t---fal la n a-Q- o.o r.t d j 111 1~3 o o o o :o S0o Q;000 o o 0 0 0 0 I 0 0 0 0 F 0 I It is an object of the present invention to provide an improved process for the production of a multi-layered wiring laminate using a polymer system.
According to one aspect of the present invention there is disclosed a process for the production of a multi-layered wiring laminate using a polymer system comprising an irradiation cross-linkable thermostable polymer for use in the manufacture of multi-layer wiring systems having a reaction product of a fluorinated linear oligomer having at least two reactive end groups per polymer molecule with radiation-sensitive substances, the process comprising the steps of a) coating a metal foil, preferably of copper, with a layer of said polymer system; b) producing a desired wiring structure by exposing said layer to light through a suitable mask and dissolving away the unexposed parts of the polymer layer; 00 c) reinforcing exposed metal by electroplating; and 0 d) in the same way producng further wiring layers by coating, 0 structuring and electroplating.
It is preferable to have a polymer system which can be cross-linked .20 by exposure to light and which is to have the following properties: 1. the dielectric constant to be less than 3; 2. the continuous temperature resistance to be greater than 100 0
C;
3. a short exposure time is desirable; if possible, times of less than minutes at an intensity of 100 mw/cm 2 (for UV-curing); 4. it is to be suitable for multi-layer construction without intermediate copper layers.
A polymer material which has both the required high resolution, good structural stability, and the required thermal load stability, and can also be easily processed using conventional photolithographic processes, has not 30 hitherto been described.
An article by C D Eisenbach in the journal "Angewandte Makromolekulare Chemie" 109/110 (1982), on pages 101 to 102, has described polyimide systems which do in fact exhibit good thermal properties after hardening but during hardening suffer a loss of about 40% in mass and therefore a strong shrinkage.
Moreover, the same article describes oligoquiiloline systems which have very good electrical properties, but are insensitive during light na4n a s/ 0 X ~1 r, 1_ I j; 1 nasna exposure and also have intrinsic colourings.
A radiation-sensitive synthetic resin layer having a cinnamic acid epichlorhydrin-bisphenol A basis, capable of partly fulfilling the object of the present invention, has been proposed in German Patent Application P 34 24 119.1.
St1 t t 4 4 4 444'
I
4a 5 Good structural resolution and suitable electrical properties are achieved by the use of this polymer system; Ihowever, the thermal load stability is not as good as it should be.
A polymer system which fulfils the above-described CL tG-\eo.o e requirements is provided byhp proon4-P in'. I in for microelectronic applications which can be cross-linked by irradia.tion, produced by reacting a linear fluoro-oligomers 10 having at least two reactive end groups per o000 o molecule as starting material with a radiationo. sensitive material.
a The starting materials may be perfluorinated ether S compounds of the chemical formula X CF20 (C 2
F
4 0) (CF 2 0) CF Y il and/or Z CF 2
(C
2 F O) m
(CF
2 0) CF 2
Z
where X and Y are CH 2 OH, COOH, COC1, NCO, Z is an isocyanate of the formula 0 H CH 3 I- I j 0 C N NCO ,1 and m and n are greater than 2, preferably between 5 and (The starting compounds are commercially available from the Montedison Company).
-1 Ay -v 6r However, it is equally possible to use as the starting materials perfluorinated alkanes of the chemical formula X (CF) X, where X is a hydroxyl group (OH), 2 m or iodine and n is preferably a number between 3 and 25. (These starting compounds are commercially available from the Hoechst Company).
In order to form products which can be cross-linked by radiation, the perfluorinated starting material can be directly reacted. The direct reaction of the fluorinated starting material with cinnamic acid, acrylic acid, or methacrylic acid and the chlorides or derivatives thereof, such as furfurylacrylic acid chloride, produces products which can be cured by UVradiation, whilst reaction with bifunctional carboxylic acids containing double bonds, such as maleic acid, or the corresponding anhydrides, such as maleic acid anhydride, leads to products which can be cured by X-rays.
t In order to increase the size of the molecules and to promote the cross-linking which increases the stability, the fluorinated starting materials having at least two reactive end groups (for example COCl-groups) may first be linked to polyfunctional, non-radiation- reactive materials, and in a subsequent step be reacted with the radiation-sensitive substances.
Examples of polyfunctional materials with which the starting materials can be reacted are j 7multifunctional alcohols, such as glycerol or pentaerythritol; poly-substituted phenols such as where X =-OH,
OH
Y C and/or Y COOH and R or an alkyl group; 0 7 where X -OH
H
I j OH and R H or alkyl group; or 7 L i ij~ z0 OH <E2: z where Z =-CH 2 OH; or bisphenol A derivatives, such as Z
CH
3 t HO o0 0 OH Z C H 3
Z
where Z CH 2 OH; or polymers which contain one or more epoxy groups -11 'E1.1 i 1 r i :i -t -rarrnn 8 per molecule and one or more groups of the formulae -OH H OH or -C
R
where R H or alkyl group, per polymer unit; for example
CH
2 CH CH CH 2 0 A 0 CH 2 CH CH n 2 I n 1 0 X
CH
3 where A preferably
CH
3 0 B ''It I It Si I t It I I I X OH or C
R
OH
R H or an alkyl group, -i )i i ~.1 B H, an alkyl group, or a phenyl group, and in particular is -CH CH CH and n 2, preferably 10 n 0 Another possibility for obtaining the desired photo-cross-linkable polymer consists in first linking the fluorinated starting material with a material having 15 photo-reactive groups and. reacting the product A so formed, in a further step, with the polyfunctional photoreactive materials. An exemplary embodiment is as follows First Step: Reaction of the fluorinated starting material with, for example, cinnamic acid chloride produces product A.
j -9- 0 HO -(CF 2n-OH 2J ~CH CH C Cl1 0 (CF 2 n 0\-~iiI C= CH -C CH CH (A) Second Step: Reaction of A with product B consisting of 1 mol glycerol and 3 mol cinnamic acid 9 0 0 H 0 I t I 0C- C-r CH CH 0 0 HC 0 L CH CH0
H
in the approximate ratio A:8 10:1 produces an end product having approximately the Following chemical Formula: 10 Q 0 C h'C c)- I I 0
M-
I I I (S-^-r0 -C~l l oH 0 dC 0 C I I H C-O C C- I H H
P
k ict
-C-C-
-I-
-CH
H
C
SH 0 1 I
I
hhip '1 I P P o
C-
0
H
HCH 42r H
H
-c-C CI I. t
I
>1) The formula given above is only one of an infinite number of possibilities for the arrangement of A and B in the cross-linked product. Such variation occurs because 1) all the possible combinations a) A A b) A B with A or B c) B -B with A or 8 can occur. The product is 3-dimensionally, "infinitely" cross-linked.
j 11 2) an infinite number of stereoisomers can occur.
For A 0 CH CH X and B C O CH CH Y a plurality of stereoisomers exist for each cyclobutane formation (cross-linking): 4 x 0 X 1 H)i
'II
As a result of the various combinations under 1), an infinite number of different conformations for the product are produced.
In carrying out the reactions, known processes for epoxide conversion or condensation reactions, are used, such as those described, for example, by D, Braun "Praktikum der Makromolekularen Chemie", published by Huthig and Wepf.
The product in accordance with the invention can be processed as a film by compression/lamination, preferably in the temperature range of from 40 to 200 C, with or without metallic intermediate layers, particularly of copper or copper alloys, or as a solute in a suitable solvent for coating substrates, in particular metal foils or sheets, by lacquering, spraying or dipping, and/or with further additives which serve as Mi.
I
CZ7.,V-- F 1'iit 12 ii iv
I
I rr i photo-initiators or stabilisers (with as photo-initiator for cinnamates, in particular, Michlers ketone, and: for acrylates, for example, benzoin derivatives in concentrations of about 1 to and with stabilisers, for example, hydroquinone, in concentrations of about 0.1 to The use of the polymer system in accordance with the invention to produce a multi-layer wiring will now be described with reference to an exemplary embodiment, and to the drawing, in which Figures 1 and 2 are similar schematic side sectional views to illustrate two stages in the production of a printed circuit. As a result of the properties of the polymer material, a new structure is obtained for the insulating carrier provided with electrical conductor paths and electrical throughcontacts.
Referring to Figure 1, a copper foil 1 is used as carrier, on to which a layer 2 of the photo-crosslinkable insulating material according to the invention is applied, after the addition of, for example, Michlers ator, ketone as photo-init by dipping or spray-lacquering, in a layer thickness of, for example, 5 to 20 pm. The layer 2 is preferably exposed to UV-radiation and developed in such a way as to form the through-contacts which are to be produced within it, i.e. the terminal points of the chips, as openings 3 in the insulating layer 2. The irradiation is effected by a contact or j i13 projection process using a mask (not shown) which covers the region of the openings 3 in the layer 2 (when using a negative lacquer). The covered parts 3 are then dissolved away using an appropriate solvent, such as, for example, a chlorofluorohydrocarbon, for example, Freon (Registered Trade Mark) marketed by the Dupont Company, or Fluorinert (Registered Trade Mark) by the 3M Company), whereas in the case of the exposed parts 13 of the layer 2, a chemical cross-linking has taken place 10 under the action of the radiation which prevents d i dissolution, so that these parts 13 remain as an insulating layer. After the production of the openings 3 for the through-contacts assigned to this first r insulating layer 2 the openings 3 are filled in K 15 association with the copper foil 1 which serves as carrier by metal plating using an electrically highly conductive material, for example copper (23 in Figure 2).
Referring now to Figure 2, a further layer 4 of the l j photo-cross-linkable insulating material in accordance with the invention is then applied to the insulating layer 13 which contains the through-contacts 23, in the same way as described with reference to Figure 1, into which layer cond.uctor paths 5 and. further through-contacts are introduced. The exposure and development of the layer 4 likewise takes place as described with reference to Figure 1. In addition to the openings 6 for the through-contacts 3 of the first insulating layer 2 (13), r I S- 14 i trench-shaped recesses 5 for the desired conductor paths are also produced in the second insulating layer 4, which recesses 5 are so arranged that at least one through-contact 23 of the first insulating layer 2 (13) projects into a recess 5. For the formation of the conductor paths, recesses 5 are provided with a metallisation by ele'ctroplating. Further throughcontacts and conductor paths can then be applied by corresponding repetition of the above-described production steps. Between the formation of the individual layers, the arrangements are subjected to a drying and/or thermal curing process in the range from 40 to 150 C, The novel wiring structures produced using the polymer system of the invention require no copper intermediate layers. The required high thermal loading stability is achieved by the polymer system itself; processing using known resist techniques is problemfree. This simplifies not only the production of such structures but also reliability in respect of electrical data.
S: For this reason, and also because of the very low dielectric constant and the good resolution, the polymer system in accordance with the invention is particularly suitable for use as a high-temperature-resistant negative resist for the production of integrated semiconductor circuits in VLSI-technology in which the production of i i r nei 15 dimensionally accurate microstructures and patterns is V of great significance. The exposure time is comparable with that of other lacquer systems which can be used in this field. Further details can be obtained from the article by C. D. Eisenbach in the Journal "Die Angewandte Makromolekulare Chemie" 109/110 (1982) on pages 101 to 112.
09 S t 9 i r''
Claims (4)
1. A process for the production of a multi-layered wiring laminate using a polymer system comprising an irradiation cross-linkable thermostable polymer for use in the manufacture of multi-layer wiring systems having a 5 reaction product of a fluorinated linear oligomer having at least two reactive end groups per polymer molecule with radiation-sensitive substances, the process comprising the steps of a) coating a metal foil, preferably of copper, with a layer of said polymer system; b) producing a desired wiring structure by expOsing said layer to light through a suitable mask and dissolving away the unexposed parts of the polymer layer; c) reinforcing exposed metal by electroplating; and d) in the same way producng further wiring layers by coating, structuring and electroplating.
2. A process as claimed in claim 1, wherein in step b. irradiation with UV-light is effected using a mask in a contact or projection process.
3. A process as claimed in claim 1, or claim 2, wherein a halogenated S hydrocarbon, preferably a chlorofluorohydrocarbon, is used as solvent for A Q .o 20 said polymer layer.
4. A process as claimed in one of claims 1 to 3, wherein, prior to the formation of a following layer, an intermediate drying and/or annealing step is carried out in the temperature range of frQo 40 to 150*C. Af .proces. g a t t~d du t c .cuit id thi A process of producing a multi-layer printed circuit using a polymer system said process substantially as hereinbefore described with reference to the drawings. DATED this TWENTY FOURTH day of NOVEMBER 1989 Siemens Aktiengesellschaft Patent Attorneys for the Applicants SPRUSON FERGUSON 16 nas/0115y Iij
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3429606 | 1984-08-10 | ||
DE3429606 | 1984-08-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
AU4596485A AU4596485A (en) | 1986-02-13 |
AU594644B2 true AU594644B2 (en) | 1990-03-15 |
Family
ID=6242852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU45964/85A Ceased AU594644B2 (en) | 1984-08-10 | 1985-08-09 | A thermostable polymer system for microelectronic applications which can be cross-linked by irradiation |
Country Status (8)
Country | Link |
---|---|
US (1) | US4732843A (en) |
EP (1) | EP0174494B1 (en) |
JP (1) | JPS6147710A (en) |
AT (1) | ATE43924T1 (en) |
AU (1) | AU594644B2 (en) |
CA (1) | CA1262070A (en) |
DE (1) | DE3570931D1 (en) |
DK (1) | DK363385A (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3679453D1 (en) * | 1985-06-05 | 1991-07-04 | Siemens Ag | METHOD FOR PRODUCING PRINTED CIRCUITS USING A RADIATION NETWORKING PHOTOPOLYMER SYSTEM. |
ATE108914T1 (en) * | 1987-03-12 | 1994-08-15 | Siemens Ag | RADIATION CROSSLINKABLE POLYMER SYSTEM FOR USE AS PHOTORESIST AND DIELECTRIC FOR MICROWIRING. |
EP0309783A3 (en) * | 1987-09-28 | 1989-08-30 | Siemens Nixdorf Informationssysteme Aktiengesellschaft | Radiation crosslinkable resins for applications in the electronic |
WO1989007337A1 (en) * | 1988-02-05 | 1989-08-10 | Raychem Limited | Laser-machining polymers |
CA2070836C (en) * | 1989-12-08 | 2002-04-02 | Frank W. Mercer | Electronic articles containing a fluorinated poly(arlene ether) dielectric |
US5155175A (en) * | 1989-12-08 | 1992-10-13 | Intellectual Property Law Dept. | Crosslinkable fluorinated polyarylene ether composition |
US5114780A (en) * | 1990-04-17 | 1992-05-19 | Raychem Corporation | Electronic articles containing a fluorinated poly(arylene ether) dielectric |
US5145936A (en) * | 1989-12-08 | 1992-09-08 | Raychem Corporation | Fluorinated poly (naphthyl ether) |
US5270453A (en) * | 1989-12-08 | 1993-12-14 | Raychem Corporation | Aromatic bistriazene compounds |
US5179188A (en) * | 1990-04-17 | 1993-01-12 | Raychem Corporation | Crosslinkable fluorinated aromatic ether composition |
US5204416A (en) * | 1990-04-17 | 1993-04-20 | Raychem Corporation | Crosslinked fluorinated poly(arylene ether) |
EP0525087B1 (en) * | 1990-04-17 | 1997-11-26 | AlliedSignal Inc. | Crosslinkable fluorinated aromatic ether compositions |
US5287619A (en) * | 1992-03-09 | 1994-02-22 | Rogers Corporation | Method of manufacture multichip module substrate |
DE69926532T2 (en) * | 1998-09-23 | 2006-06-01 | E.I. Du Pont De Nemours And Co., Wilmington | PHOTORESISTS, POLYMERS AND METHODS FOR MICROLITHOGRAPHY |
US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
US6166156A (en) * | 1998-11-12 | 2000-12-26 | Wu; Chengjiu | Method for making photocurable halofluorinated acrylates |
US6787286B2 (en) * | 2001-03-08 | 2004-09-07 | Shipley Company, L.L.C. | Solvents and photoresist compositions for short wavelength imaging |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3649274A (en) * | 1969-09-18 | 1972-03-14 | Bunker Ramo | Coaxial circuit construction method |
US3922479A (en) * | 1971-09-15 | 1975-11-25 | Bunker Ramo | Coaxial circuit construction and method of making |
US3909269A (en) * | 1972-07-18 | 1975-09-30 | Western Litho Plate & Supply | Lithographic plate comprising a light-sensitive polymer |
CA1156795A (en) * | 1979-04-11 | 1983-11-08 | Richard G. Newell | Curable fluorocarbon substituted polyetherurethaneacrylates |
US4321404A (en) * | 1980-05-20 | 1982-03-23 | Minnesota Mining And Manufacturing Company | Compositions for providing abherent coatings |
JPS57178242A (en) * | 1981-04-27 | 1982-11-02 | Konishiroku Photo Ind Co Ltd | Photosensitive lithographic plate |
CA1195039A (en) * | 1982-01-04 | 1985-10-08 | David L. Goff | Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound |
CA1214361A (en) * | 1982-07-02 | 1986-11-25 | James M. Larson | Composite low surface energy liner of perfluoropolyether |
US4472480A (en) * | 1982-07-02 | 1984-09-18 | Minnesota Mining And Manufacturing Company | Low surface energy liner of perfluoropolyether |
DE3235675A1 (en) * | 1982-09-27 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING SEMICONDUCTOR CHIP FILM CARRIERS |
-
1985
- 1985-08-05 DE DE8585109826T patent/DE3570931D1/en not_active Expired
- 1985-08-05 US US06/762,513 patent/US4732843A/en not_active Expired - Fee Related
- 1985-08-05 EP EP85109826A patent/EP0174494B1/en not_active Expired
- 1985-08-05 AT AT85109826T patent/ATE43924T1/en not_active IP Right Cessation
- 1985-08-06 JP JP60173078A patent/JPS6147710A/en active Pending
- 1985-08-08 CA CA000488335A patent/CA1262070A/en not_active Expired
- 1985-08-09 DK DK363385A patent/DK363385A/en not_active Application Discontinuation
- 1985-08-09 AU AU45964/85A patent/AU594644B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE3570931D1 (en) | 1989-07-13 |
EP0174494A3 (en) | 1987-06-10 |
CA1262070A (en) | 1989-10-03 |
JPS6147710A (en) | 1986-03-08 |
DK363385D0 (en) | 1985-08-09 |
EP0174494B1 (en) | 1989-06-07 |
AU4596485A (en) | 1986-02-13 |
EP0174494A2 (en) | 1986-03-19 |
ATE43924T1 (en) | 1989-06-15 |
US4732843A (en) | 1988-03-22 |
DK363385A (en) | 1986-02-11 |
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